CN116926672A - Method for vertical heteroepitaxy high-orientation metal platinum based on monocrystal tungsten diselenide - Google Patents
Method for vertical heteroepitaxy high-orientation metal platinum based on monocrystal tungsten diselenide Download PDFInfo
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- CN116926672A CN116926672A CN202210359112.0A CN202210359112A CN116926672A CN 116926672 A CN116926672 A CN 116926672A CN 202210359112 A CN202210359112 A CN 202210359112A CN 116926672 A CN116926672 A CN 116926672A
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 107
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 58
- 239000002184 metal Substances 0.000 title claims abstract description 58
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 46
- ROUIDRHELGULJS-UHFFFAOYSA-N bis(selanylidene)tungsten Chemical compound [Se]=[W]=[Se] ROUIDRHELGULJS-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 238000001534 heteroepitaxy Methods 0.000 title claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 238000000137 annealing Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 28
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 14
- 239000010410 layer Substances 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 230000001939 inductive effect Effects 0.000 claims description 5
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 239000011669 selenium Substances 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 238000000407 epitaxy Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000005669 field effect Effects 0.000 abstract 2
- 239000002135 nanosheet Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000861 blow drying Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- -1 platinum-tungsten diselenide Chemical compound 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a method for preparing vertical heteroepitaxy high-orientation metal platinum based on monocrystal tungsten diselenide, which is characterized in that the gap between the obtained metal platinum and the tungsten diselenide is smaller than Van der Hua Jianju, so that better two-dimensional material and metal contact are formed. Tungsten diselenide is arranged on the bottom layer, metal platinum is arranged on the upper layer, the tungsten diselenide and the metal platinum are vertically stacked, and high-orientation metal platinum epitaxy is longitudinally induced by adopting oxygen annealing, so that the contact resistance of the heterojunction is reduced. The method solves the problems of difficult preparation of the high-orientation metal film, limited film size and high cost. The tungsten diselenide field effect transistor is PMOS, the high-quality contact between the semiconductor two-dimensional material and metal is realized by the method of the invention, which is beneficial to reducing the contact resistance, forming complementation with the NMOS field effect transistor and improving the performance of the nano-sheet CMOS device.
Description
Technical Field
The invention relates to a method for extending a metal film, in particular to a method for forming high-quality contact by inducing an epitaxial high-orientation metal platinum film based on a p-type two-dimensional material.
Background
As silicon-based process dimensions shrink, short channel effects increasingly and significantly affect the performance display of transistor devices, requiring high mobility, high on-off ratio atomic layer thickness two-dimensional semiconductor channel materials for further achieving complementary logic circuit size shrink while guaranteeing device performance. Among these, an n-type two-dimensional material (molybdenum sulfide) transistor has excellent performance, and one of the obstacles to further development of CMOS devices is that the mobility of the p-type two-dimensional material is low and the contact resistance is large. There is a need to develop a method of inducing metal to form highly oriented epitaxial contacts with a p-type two-dimensional material to achieve a lower resistance, higher mobility p-type transistor device.
The existing preparation method of the metal film mainly adopts a deposition method or a sputtering method, and a great number of grain boundaries exist in the deposited polycrystalline metal film, so that the property of the metal film can be greatly reduced, and the contact resistance is increased. In recent years, a single crystal two-dimensional material is used as a substrate epitaxial single crystal metal material, and a simple and practical method for preparing the single crystal metal material is provided.
Disclosure of Invention
Aiming at the problems of difficult preparation, limited film size and high cost of the existing high-orientation metal film, the invention aims to provide a method for preparing a non-damaged vertical heterogeneous induction epitaxial noble metal platinum film based on a single-crystal two-dimensional material tungsten diselenide, thereby providing a simple method for preparing a high-performance p-type transistor. The contact between the metal platinum and the tungsten diselenide is improved, and the contact is optimized by utilizing the vertical heteroepitaxial deposition of the metal platinum and the tungsten diselenide, so that a heterojunction smaller than the van der Waals spacing is formed, and the contact resistance smaller than that of the conventional p-type device is realized.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a method for preparing a vertical heteroepitaxy high-orientation metal platinum film is characterized in that single-crystal tungsten diselenide is used as an epitaxial substrate, metal platinum is deposited on the epitaxial substrate in an epitaxial mode to obtain a polycrystalline metal platinum film, then the metal platinum is induced to form the high-orientation metal platinum film along the tungsten diselenide through oxygen annealing, and the distance between a metal platinum heterojunction and a tungsten diselenide heterojunction is smaller than the Van der Waals distance, so that better p-type ohmic contact is formed.
The high-orientation metal platinum film is obtained based on single-crystal tungsten diselenide induced epitaxy, and the thickness of the metal platinum film is preferably 5-20 nanometers. Tungsten diselenide is arranged on the bottom layer, metal platinum is arranged on the upper layer, the tungsten diselenide and the metal platinum are vertically stacked, and high-orientation metal platinum epitaxy is formed by adopting oxygen annealing, so that the contact resistance of the heterojunction is reduced. Preferably, the single-crystal tungsten diselenide is a single layer to ten layers, and is grown on the surface of any substrate (amorphous substrate and single-crystal substrate) through chemical vapor deposition, and can be amorphous silicon oxide, silicon nitride substrate or single-crystal sapphire substrate, and the substrate cannot influence the induction of metal crystallization to form a high-orientation film.
Preferably, the method for vertical heteroepitaxy of highly oriented metal films comprises the steps of:
firstly, growing monocrystal tungsten diselenide on a substrate by adopting a chemical vapor deposition method;
secondly, epitaxially growing a polycrystalline metal platinum film on the obtained monocrystal tungsten diselenide serving as a substrate;
and thirdly, annealing the tungsten diselenide-polycrystalline metal platinum film in oxygen, and inducing polycrystalline platinum to form a highly oriented platinum film by using the tungsten diselenide to obtain a heterojunction with a distance smaller than Van der Hua Jianju, so as to form better p-type ohmic contact.
Preferably, in the above method, the method of growing tungsten diselenide in the first step is a chemical vapor deposition method. In one embodiment of the invention, the substrate is placed in a chemical vapor deposition system, the tungsten dioxide and selenium source are heated, 100 standard milliliters per minute argon and 10 standard milliliters per minute hydrogen are introduced, the reaction pressure is maintained between 1000 and 2000 Pa, and growth is performed at 890 degrees Celsius on the substrate surface for 10-15 minutes. After the growth is finished, the heating power supply is turned off, inert gas is used as protective gas, the temperature is naturally cooled to room temperature, and high-quality large-size monocrystal tungsten diselenide is grown on the surface of the substrate.
Preferably, in the above method, the method of the epitaxial polycrystalline platinum film in the second step is electron beam evaporation, and the evaporation rate may be 0.04 nm per second. The thickness of the metal platinum film is preferably 5-20 nm.
Preferably, in the above method, the method of inducing the formation of the highly oriented metallic platinum film in the third step is oxygen annealing at 200 to 300 degrees celsius for 1 to 6 hours. And argon is used as carrier gas in oxygen annealing, oxygen is mixed, a mixed gas of the argon and the oxygen is introduced in the annealing, the flow rate of the argon is 100-1000 sccm, the flow rate of the oxygen is 10-100 sccm, and the pressure is 19-760 torr. In one embodiment of the invention, a substrate on which metal platinum is deposited is placed in a quartz boat, placed in a tube furnace, argon with the flow of 100 standard milliliters per minute is introduced, then the temperature is raised, oxygen is introduced when the temperature is raised to 300 ℃, the flow of 10 standard milliliters per minute is maintained at 300 ℃, the temperature is maintained for 2 hours, after annealing is finished, the substrate is cooled to room temperature, and the high-orientation metal platinum film on tungsten diselenide is obtained, and the metal platinum on the surface of the substrate without tungsten diselenide is still a polycrystalline film. The spacing between the tungsten diselenide and the highly oriented metal platinum is smaller than the van der waals spacing. The p-type tungsten diselenide transistor prepared by the method has better contact.
The invention has the beneficial effects that:
(1) The invention provides a method for depositing a highly oriented metal platinum film on the surface of a monocrystalline two-dimensional material for the first time.
(2) The invention can select mature silicon oxide/p-type silicon wafer substrate, and grow monocrystal tungsten diselenide on amorphous silicon oxide by chemical vapor deposition method, and has low cost and simple process.
(3) The invention uses common electron beam evaporation method to deposit the polycrystalline metal platinum film on tungsten diselenide, and the high-orientation metal platinum film can be obtained through high-temperature oxygen annealing in a simple tube furnace.
(4) The method can improve the contact quality of the metal platinum and the tungsten diselenide, reduce the contact resistance and realize a high-performance p-type transistor device.
Drawings
Fig. 1 is a schematic diagram of a p-type transistor structure with vertical heteroepitaxial contact of metal platinum-tungsten diselenide prepared in the embodiment, wherein 1 is a silicon substrate, 2 is a silicon dioxide layer, 3 is a tungsten diselenide layer, and 4 is a metal platinum film.
FIG. 2 is a schematic illustration of an example preparationA process flow diagram of a vertical heteroepitaxial contact p-type transistor of metal platinum-tungsten diselenide, wherein step 1, a silicon wafer is cleaned by a standard RCA cleaning process and is rapidly annealed to remove organic residues; step 2, growing WSe by adopting chemical vapor deposition process 2 The method comprises the steps of carrying out a first treatment on the surface of the Step 3, preparing a metal platinum electrode through a micro-nano processing technology or a router mask evaporation technology; and step 4, performing oxygen annealing by using a tube furnace to obtain the highly oriented metal platinum film.
Fig. 3 is a scanning electron microscope cross-sectional view of highly oriented metallic platinum prepared in the examples.
Detailed Description
In order to make the contents of the present invention more comprehensible, the following embodiments are described in detail below with reference to examples, but the following examples are only examples of the present invention and are not intended to represent the scope of the present invention defined by the claims.
A method for vertical heteroepitaxial single crystal metallic platinum thin film based on three layers of tungsten diselenide, see fig. 2, comprising the steps of:
the first step: using SiO 2 And (3) cleaning particles, organic matters, oxides and the like on the Si (111) substrate by adopting a standard RCA cleaning process, and drying the cleaned substrate by high-purity nitrogen for later use.
And a second step of: and growing three layers of tungsten diselenide materials on the silicon dioxide layer by chemical vapor deposition.
And a third step of: the method comprises the following process steps of spin coating photoresist, baking, photoetching, developing, metal evaporation, stripping and the like to prepare the metal platinum electrode: (1) Spin-coating PMMA, wherein spin-coating parameters are 3000rpm,60s, and baking at 180 ℃ for 90s after spin-coating; (2) Exposing the photoresist of the stripped metal by electron beam to pattern; (3) developing: developing solution is MIBK: IPA=1:3, developing is carried out for 45s, deionized water is used for cleaning, and N is the same as the developing solution 2 Blow-drying; (4) evaporating Pt with the thickness of 20 nm; (5) stripping metal: heating in NMP at 120deg.C for 30min, cleaning with isopropanol, and blow-drying with nitrogen.
Fourth step: and (3) annealing at the temperature of 300 ℃ for 120min under the pressure of 19torr in the tube furnace, wherein the gas is 10sccm oxygen/100 sccm argon, and naturally cooling to normal temperature after annealing.
Fifth step: the sample was subjected to a cross-sectional characterization by scanning electron microscopy, and the result is highly oriented (111) platinum as shown in fig. 3.
Claims (9)
1. A method for preparing a vertical heteroepitaxy high-orientation metal platinum film is characterized in that single-crystal tungsten diselenide is used as an epitaxial substrate, metal platinum is deposited on the epitaxial substrate in an epitaxial mode to obtain a polycrystalline metal platinum film, and then the metal platinum is induced to form the high-orientation metal platinum film along the tungsten diselenide through oxygen annealing.
2. The method of claim 1, wherein the metallic platinum film has a thickness of 5 nm to 20 nm.
3. The method of claim 1, wherein the single crystal tungsten diselenide is a single layer to ten layers of two-dimensional material.
4. The method of claim 1, comprising the steps of:
1) Growing monocrystal tungsten diselenide on the substrate by adopting a chemical vapor deposition method;
2) Epitaxially growing a polycrystalline metal platinum film on the monocrystalline tungsten diselenide serving as a substrate;
3) Annealing the tungsten diselenide-polycrystalline metal platinum film in oxygen, and inducing polycrystalline platinum by the tungsten diselenide to form a highly oriented platinum film to obtain a heterojunction with a distance smaller than Van der Hua Jianju, so as to form good p-type ohmic contact.
5. The method of claim 4, wherein the substrate in step 1) is an amorphous substrate or a single crystal substrate.
6. The method of claim 4, wherein step 1) grows single crystal tungsten diselenide in a chemical vapor deposition system using tungsten dioxide and a selenium source.
7. The method of claim 4, wherein step 2) is performed by electron beam evaporation to form an epitaxial polycrystalline platinum film.
8. The method of claim 4, wherein the annealing in oxygen at step 3) is performed at a temperature of 200 to 300 ℃ for a period of 1 to 6 hours.
9. The method of claim 4, wherein step 3) is performed in a tube furnace, and a mixture of argon and oxygen is introduced during annealing, wherein the flow rate of the argon is 100-1000 sccm, the flow rate of the oxygen is 10-100 sccm, and the pressure is 19-760 torr.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210359112.0A CN116926672A (en) | 2022-04-07 | 2022-04-07 | Method for vertical heteroepitaxy high-orientation metal platinum based on monocrystal tungsten diselenide |
| PCT/CN2023/084393 WO2023193636A1 (en) | 2022-04-07 | 2023-03-28 | Method for highly orienting platinum on basis of vertical heteroepitaxy of single crystal tungsten diselenide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210359112.0A CN116926672A (en) | 2022-04-07 | 2022-04-07 | Method for vertical heteroepitaxy high-orientation metal platinum based on monocrystal tungsten diselenide |
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| CN116926672A true CN116926672A (en) | 2023-10-24 |
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| CN202210359112.0A Pending CN116926672A (en) | 2022-04-07 | 2022-04-07 | Method for vertical heteroepitaxy high-orientation metal platinum based on monocrystal tungsten diselenide |
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| WO (1) | WO2023193636A1 (en) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498097B1 (en) * | 1997-05-06 | 2002-12-24 | Tong Yang Cement Corporation | Apparatus and method of forming preferred orientation-controlled platinum film using oxygen |
| KR101878465B1 (en) * | 2016-07-12 | 2018-07-13 | 기초과학연구원 | Single crystal metal foil, and method of manufacturing the same |
| CN108118395A (en) * | 2017-12-15 | 2018-06-05 | 北京科技大学 | A kind of method that chemical vapor deposition prepares two tungsten selenide monocrystal thin films |
| CN108845017B (en) * | 2018-05-31 | 2023-11-14 | 清华大学 | Flexible ion sensor based on tungsten diselenide |
| CN109297622B (en) * | 2018-11-08 | 2024-02-02 | 清华大学 | Miniature piezoresistive stress sensor based on tungsten diselenide |
| CN110616458B (en) * | 2019-03-07 | 2021-01-26 | 北京大学 | Method for vertical heteroepitaxy monocrystal metal film based on monocrystal copper |
| CN110616454B (en) * | 2019-03-07 | 2020-10-09 | 北京大学 | Method for vertical heteroepitaxy monocrystal metal film based on monocrystal two-dimensional material/monocrystal copper |
| CN111424309B (en) * | 2020-05-15 | 2021-07-09 | 中国科学院重庆绿色智能技术研究院 | Single crystal metal foil and preparation method thereof |
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| WO2023193636A1 (en) | 2023-10-12 |
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