CN116921794A - Vacuum welding furnace capable of intelligently controlling temperature for semiconductor welding - Google Patents
Vacuum welding furnace capable of intelligently controlling temperature for semiconductor welding Download PDFInfo
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- CN116921794A CN116921794A CN202311136191.XA CN202311136191A CN116921794A CN 116921794 A CN116921794 A CN 116921794A CN 202311136191 A CN202311136191 A CN 202311136191A CN 116921794 A CN116921794 A CN 116921794A
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- 238000003466 welding Methods 0.000 title claims abstract description 175
- 239000004065 semiconductor Substances 0.000 title claims abstract description 102
- 238000001514 detection method Methods 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims description 224
- 238000005476 soldering Methods 0.000 claims description 36
- CLOMYZFHNHFSIQ-UHFFFAOYSA-N clonixin Chemical compound CC1=C(Cl)C=CC=C1NC1=NC=CC=C1C(O)=O CLOMYZFHNHFSIQ-UHFFFAOYSA-N 0.000 claims description 25
- 238000012937 correction Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 16
- 238000012544 monitoring process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 40
- 230000008569 process Effects 0.000 description 29
- 238000010923 batch production Methods 0.000 description 4
- 238000012827 research and development Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/08—Auxiliary devices therefor
Abstract
The invention relates to the technical field of vacuum welding furnaces for semiconductor welding, and in particular discloses an intelligent temperature-controllable vacuum welding furnace for semiconductor welding, which comprises the following components: a furnace body with a cavity inside. The placing module is arranged in the cavity and used for rapidly placing the semiconductor to be welded. The air suction module is used for sucking the air in the cavity, so that a vacuum environment is established in the cavity, and air residues and pollution are effectively reduced. One end of the air duct is communicated with the through hole and is used for guiding air to the welding module. The welding module heats the gas guided by the gas guide pipe so as to weld the semiconductor. The temperature detection modules are used for monitoring the temperature of the gas in the furnace and the temperature information of the welded semiconductor component in real time. The control module is used for controlling the welding temperature of the welding module according to the temperature information detected by the temperature detection module, so that the stability and uniformity of the welding temperature are effectively ensured, and the welding quality and reliability are improved.
Description
Technical Field
The invention relates to the technical field of vacuum welding furnaces for semiconductor welding, in particular to an intelligent temperature-controllable vacuum welding furnace for semiconductor welding.
Background
The vacuum welding furnace is a system specially designed for small-batch production and research and development, and the vacuum welding system uses vacuum to achieve a void-free welding spot, can completely meet the requirements of research and development departments, is suitable for small-batch production, can use a process of lead-free soldering paste or soldering lug, and can also use a process of soldering flux. In the semiconductor industry, vacuum welding is needed in the processes of brazing, packaging and the like of semiconductor devices, so that the problem of easy oxidation of semiconductors in the welding process can be effectively reduced, the welding spot holes are reduced, and the quality of semiconductor products is provided
However, the temperature control system of the current vacuum welding furnace may react slowly, cannot realize real-time temperature adjustment, causes temperature fluctuation or exceeds a target temperature range, further causes damage to the welded semiconductor component, cannot perform intelligent adjustment according to welding conditions and material characteristics, and limits optimization and improvement of a welding process.
Therefore, it is urgently needed to invent an intelligent temperature-controlled vacuum welding furnace for solving the problems that the vacuum welding furnace in the traditional technology causes damage to welded semiconductor components due to poor temperature control, and the intelligent adjustment is performed according to welding conditions and material characteristics, so that the optimization and improvement of the welding process are limited.
Disclosure of Invention
The purpose of the invention is that: the intelligent temperature-controllable vacuum welding furnace for semiconductor welding is provided, and aims to solve the problems that the vacuum welding furnace in the prior art is poor in temperature control, so that welded semiconductor components are damaged, and the method is adjusted according to welding conditions and material characteristics, so that the welding process is optimized and improved.
In one aspect, an embodiment of the present invention provides an intelligent temperature-controllable vacuum welding furnace for welding a semiconductor, including:
the furnace body is internally provided with a cavity;
the placing module is arranged in the cavity, one side of the placing module is connected with the inner side surface of the cavity, and the placing module is used for placing a semiconductor to be welded;
one end of the air suction module is connected with one side of the furnace body, the other end of the air suction module penetrates through the outer side wall of the furnace body and is arranged in the cavity, and the air suction module is used for sucking gas in the cavity;
the welding module is arranged in the cavity and fixedly connected with the inner top surface of the cavity, and a through hole is formed in the bottom of the welding module;
the gas guide pipe is arranged at the top of the furnace body, one end of the gas guide pipe penetrates through the top of the furnace body and is communicated with the through hole, and the gas guide pipe is used for guiding gas to the welding module;
The temperature detection modules are arranged in the air duct, the bottom of the placement frame and the bottom of the welding module respectively, and are used for detecting the temperature information of the air guided by the air duct, the temperature information of the flowing air in the through hole and the temperature information of the semiconductor to be welded;
the control module is respectively and electrically connected with the placement module, the air suction module, the welding module and the temperature detection module, and is used for controlling the placement module, the air suction module, the welding module and the temperature detection module.
Further, the air suction module includes:
the vacuum pump is arranged on one side of the furnace body and is connected with the outer side wall of the furnace body;
one end of the air suction pipe penetrates through the outer side wall of the furnace body and is arranged in the cavity, and the other end of the air suction pipe is connected with the vacuum pump, so that when the vacuum pump pumps gas, the air suction pipe is used for guiding the gas in the cavity into the vacuum pump.
Further, the placement module includes:
the connecting frames are provided with two groups, and the two connecting frames are oppositely arranged in the cavity;
The plurality of placing frames are arranged and are respectively arranged between the two connecting frames along the circumferential direction of the connecting frames, two ends of each placing frame are respectively connected with the two connecting frames in a rotating way, and each placing frame is used for placing the semiconductor to be welded;
the rotating motor is arranged in the cavity and fixedly connected with the inner side wall of the cavity, the rotating output end of the rotating motor is clamped with the connecting frame, and the rotating motor is used for driving the connecting frame to move along the rotating direction of the rotating motor.
Further, the welding module includes:
the welding box is arranged in the cavity, a groove is formed in the bottom of the welding box, and a through hole and a temperature detection module are arranged in the groove;
the telescopic connecting pipe is arranged at the top end of the welding box, one end of the telescopic connecting pipe is embedded in the outer side wall of the welding box, the other end of the telescopic connecting pipe penetrates through the inner top surface of the cavity and is communicated with the air duct, and the telescopic connecting pipe is used for guiding air guided by the air duct into the welding box;
lifting unit sets up two sets of, and two lifting unit sets up relatively the telescopic connection pipe both sides, lifting unit one end with the top surface is connected in the cavity, the lifting unit other end with the welding box is connected, the lifting unit is used for driving the welding box is followed lifting unit lifting direction moves.
Further, the welding box includes:
a case;
the heating modules are arranged in two groups, the two heating modules are oppositely arranged on two sides of the through hole, and two ends of each heating module are respectively connected with the inner top surface and the inner bottom surface of the box body.
Further, the control module includes:
the acquisition unit is respectively and electrically connected with the air duct, the temperature detection module and the two heating modules, and is used for acquiring the temperature information of the air guided by the air duct, the temperature information of the air flowing out of the through hole, the temperature information of the semiconductor to be welded and the heating information of the heating modules;
and the control unit is respectively and electrically connected with the two heating modules, and is used for controlling and adjusting the heating information of the two heating modules according to the temperature information of the gas guided by the inside of the gas guide pipe, the temperature information of the gas flowing out of the through hole and the temperature information of the semiconductor to be welded.
Further, the control unit is further configured to obtain a real-time temperature L of the soldering material of the semiconductor to be soldered, and the control unit is further configured to calculate k0= (J-L) +h according to a formula;
wherein K0 is the required heating temperature of the heating module, J is the required welding temperature of the welding material of the semiconductor to be welded, and H is the internal diversion gas temperature of the gas guide tube;
The control unit is also used for acquiring the real-time heating temperature K of the heating module and judging whether the temperature of the heating module is adjusted according to the relation between the real-time heating temperature K and the required heating temperature K0;
when K is more than or equal to K0, the control unit judges that the temperature of the heating module is satisfied with the required heating temperature, and the heating temperature of the heating module is not required to be adjusted;
when K is smaller than K0, the control unit judges that the temperature of the heating module is not satisfied with the required heating temperature, and adjusts the heating temperature of the heating module according to the relation between the real-time heating temperature K and the required heating temperature K0.
Further, when the control unit adjusts the heating temperature of the heating module according to the relation between the real-time heating temperature K and the required heating temperature K0, the control unit includes:
the control unit is further used for obtaining a heating temperature difference delta K between the real-time heating temperature K and the required heating temperature K0, comparing the heating temperature difference delta K with a preset heating temperature difference, and selecting a corresponding adjusting coefficient according to a comparison result to adjust the heating temperature of the heating module;
Wherein, the first heating temperature difference delta K1 and the second heating temperature difference delta K2 are preset, the first adjustment coefficient X1, the second adjustment coefficient X2 and the third adjustment coefficient X3 are preset, and delta K1 < [ delta ] K2; x1 is more than 0.5 and less than X2 is more than X3 and less than 1;
when delta K is less than or equal to delta K1, selecting the first adjustment coefficient X1 to adjust the heating temperature of the heating module;
when delta K1 is less than or equal to delta K2, selecting the second adjustment coefficient X2 to adjust the heating temperature of the heating module;
when delta K > -delta K2, selecting the third adjustment coefficient X3 to adjust the heating temperature of the heating module;
when the control unit selects the ith adjustment coefficient Xi to adjust the heating temperature of the heating module, i=1, 2,3, and sets the adjusted heating temperature of the heating module to be F1, f1=f×xi, where F is the initial heating temperature of the heating module.
Further, when the control unit selects the ith adjustment coefficient Xi to adjust the heating temperature of the heating module and obtains the adjusted heating temperature F1 of the heating module, the method includes:
the control unit is further used for acquiring a real-time temperature R of the gas flowing out of the through hole, acquiring a maximum heated temperature T of the semiconductor to be welded, and judging whether the semiconductor to be welded can bear the real-time temperature of the gas flowing out of the through hole according to the relation between the real-time temperature R of the gas and the maximum heated temperature T;
When R is less than or equal to T, the control unit judges that the real-time temperature of the gas flowing out of the through hole does not exceed the maximum heated temperature of the semiconductor to be welded;
when R is more than T, the control unit judges that the real-time temperature of the gas flowing out of the through hole exceeds the maximum heated temperature of the semiconductor to be welded, and corrects the heating temperature F1 of the heating module after adjustment according to the relation between the real-time temperature R of the gas and the maximum heated temperature T.
Further, when the control module corrects the adjusted heating temperature F1 of the heating module according to the relationship between the real-time temperature R of the gas and the maximum heated temperature T, the method includes:
the control module is further used for obtaining a temperature difference DeltaR between the real-time temperature R of the gas and the maximum heated temperature T, deltaR=R-T, comparing the temperature difference DeltaR with a preset temperature difference, and selecting a corresponding correction coefficient according to a comparison result to correct the adjusted heating temperature F1 of the heating module;
wherein, the first temperature difference DeltaR 1 and the second temperature difference DeltaR 2 are preset, the first correction coefficient U1, the second correction coefficient U2 and the third correction coefficient U3 are preset, and DeltaR 1 < DeltaR2; 1 > U2 > U3 > 0.85;
When DeltaR is less than or equal to DeltaR 1, selecting a first correction coefficient U1 to correct the adjusted heating temperature F1 of the heating module;
when DeltaR 1 < DeltaR2 is less than or equal to DeltaR 2, selecting a second correction coefficient U2 to correct the adjusted heating temperature F1 of the heating module;
when DeltaR > DeltaR2, selecting a third correction coefficient U3 to correct the adjusted heating temperature F1 of the heating module;
when the control unit selects the ith correction coefficient Ui to correct the adjusted heating temperature F1 of the heating module, i=1, 2,3, and sets the corrected heating temperature F2 of the heating module, f2=f1×ui.
Compared with the prior art, the intelligent temperature-controllable vacuum welding furnace for welding the semiconductor has the beneficial effects that: through the setting of temperature detection module in air duct, rack bottom and welding module bottom, make temperature detection module can monitor and detect the gas temperature information and the welded semiconductor part temperature in the stove in real time. The control module can intelligently control and adjust the placement module, the air suction module and the welding module according to the temperature information, so that the stability and uniformity of the welding temperature in the welding process are effectively ensured, and the welding quality and reliability are improved. And secondly, by arranging the air suction module, the furnace body can realize the suction of air in the cavity in the welding process, so that a vacuum environment is established. The vacuum welding environment is favorable for reducing gas residues and pollution, avoiding gas interference to welding parts and further improving welding quality. Finally, the arrangement of the placement module enables the semiconductor component to be welded to be conveniently placed in the furnace, is beneficial to the operation of staff, and ensures the stability and safety of the welded component.
Drawings
Fig. 1 is a schematic structural diagram of an intelligent temperature-controllable vacuum welding furnace for welding semiconductors according to an embodiment of the application.
Fig. 2 is a schematic sectional view of a vacuum soldering furnace capable of intelligently controlling temperature for soldering a semiconductor according to an embodiment of the present application.
Fig. 3 is a schematic structural view of a connecting frame according to an embodiment of the present application.
Fig. 4 is a schematic structural view of a rack according to an embodiment of the present application.
Fig. 5 is a schematic view of the structure of a welding box in an embodiment of the present application.
FIG. 6 is a functional block diagram of a control module in an embodiment of the application.
In the figure, 100, furnace body; 200. placing a module; 210. a connecting frame; 220. a placing rack; 230. a rotating motor; 310. a vacuum pump; 320. an air suction pipe; 410. welding a box; 420. a telescopic connecting pipe; 430. a lifting unit; 412. a heating module; 413. a through hole; 500. an air duct; 600. a temperature detection module; 800. a display module; 900. and (5) welding the semiconductor.
Detailed Description
The following describes in further detail the embodiments of the present application with reference to the drawings and examples. The following examples are illustrative of the application and are not intended to limit the scope of the application.
In the description of the present application, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present application and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.
The terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
The vacuum welding furnace is a system specially designed for small-batch production and research and development, and the vacuum welding system uses vacuum to achieve a void-free welding spot, can completely meet the requirements of research and development departments, is suitable for small-batch production, can use a process of lead-free soldering paste or soldering lug, and can also use a process of soldering flux. In the semiconductor industry, vacuum welding is needed in the processes of brazing, packaging and the like of semiconductor devices, so that the problem of easy oxidation of semiconductors in the welding process can be effectively reduced, the welding spot holes are reduced, and the quality of semiconductor products is provided
However, the temperature control system of the current vacuum welding furnace may react slowly, cannot realize real-time temperature adjustment, causes temperature fluctuation or exceeds a target temperature range, further causes damage to the welded semiconductor component, cannot perform intelligent adjustment according to welding conditions and material characteristics, and limits optimization and improvement of a welding process.
In view of the above, the invention provides an intelligent temperature-controllable vacuum welding furnace for semiconductor welding, which aims to solve the problems that the vacuum welding furnace in the prior art causes damage to welded semiconductor components due to poor temperature control, and the method adjusts according to welding conditions and material characteristics, so that the welding process is optimized and improved.
As shown in fig. 1 and 2, an intelligent temperature-controllable vacuum soldering furnace for soldering a semiconductor according to a preferred embodiment of the present invention includes: furnace body 100, placement module 200, air suction module, welding module, air duct 500, temperature detection module 600 and control module; the furnace body 100 is provided with a cavity therein. The placement module 200 is disposed inside the cavity, one side of the placement module 200 is connected to an inner side surface of the cavity, and the placement module 200 is used for placing the semiconductor 900 to be soldered. One end of the air suction module is connected with one side of the furnace body 100, the other end of the air suction module penetrates through the outer side wall of the furnace body 100 and is arranged in the cavity, and the air suction module is used for sucking gas in the cavity. The welding module sets up in the inside of cavity, and welding module and the interior top surface fixed connection of cavity, through-hole 413 has been seted up to welding module's bottom. The air duct 500 is arranged at the top of the furnace body 100, one end of the air duct 500 penetrates through the top of the furnace body 100 to be communicated with the through hole 413, and the air duct 500 is used for guiding gas to the welding module. The temperature detection module 600 is provided with a plurality of, and a plurality of temperature detection module 600 set up respectively in the inside of air duct 500, rack 220 bottom and welding module's bottom, and temperature detection module 600 is used for detecting the inside water conservancy diversion's of air duct 500 gas temperature information, the temperature information of outflow gas in the through-hole 413 and the temperature information of waiting to weld semiconductor 900. The control module is electrically connected with the placement module 200, the air suction module, the welding module and the temperature detection module 600, and is used for controlling the placement module 200, the air suction module, the welding module and the temperature detection module 600.
Preferably, the intelligent temperature-controllable vacuum welding furnace for welding semiconductors in the embodiment of the invention is further provided with a display module 800, the display module 800 is fixedly connected with the furnace body 100 through a bracket, the display module 800 is used for displaying the temperature information of the gas guided by the inside of the gas guide pipe 500, the temperature information of the gas discharged from the through hole 413, the temperature information of the semiconductor 900 to be welded and the heating information of the heating module 412, and a control instruction is sent to the control module.
It can be seen that the intelligent temperature-controllable vacuum welding furnace for semiconductor welding in the embodiment of the invention is composed of the intelligent temperature-controllable vacuum welding furnace for semiconductor welding, and comprises the following components: the placement module 200 is used for placing a semiconductor to be soldered and is connected to the inner side surface of the cavity. The air suction module is connected to one side of the furnace body 100 and is used for sucking the air in the cavity and keeping the atmosphere clean. The welding module is positioned in the cavity and fixedly connected to the top surface of the cavity, and is provided with a through hole 413 for guiding gas. The gas guide pipe 500 is provided at the top of the furnace body 100 and connected to the welding module through-hole 413 for introducing gas into the welding module. The temperature detection module 600 is respectively located inside the air duct 500, at the bottom of the placement frame 220, and at the bottom of the soldering module, and is used for monitoring the temperature information of the gas inside the air duct 500, the gas flowing out of the through holes 413, and the semiconductor 900 to be soldered in real time. The control module is connected to the placement, suction, welding and temperature detection module 600 and is responsible for precisely controlling the placement, suction, welding and temperature detection module. In addition, the display module 800 is connected with the furnace body 100 through a bracket, and is used for displaying temperature information of the air duct 500, the through hole 413, the semiconductor 900 to be welded and the heating module 412, and sending corresponding control instructions through the control module.
It will be appreciated that by cooperation of the placement, gettering, bonding and temperature detection modules 600, precise control and temperature monitoring of the bonding process and the semiconductor 900 to be bonded is achieved, helping to improve bonding quality and consistency. Next, the temperature information of the guide gas inside the gas guide tube 500, the temperature information of the gas flowing out of the through hole 413, the temperature information of the semiconductor 900 to be soldered and the heating information of the heating module 412 are displayed through the display module 800, so that an operator can know the state and the temperature condition in the semiconductor soldering in real time. Meanwhile, the control module is used for controlling the placement, air suction, welding and temperature detection module 600, so that automatic operation and accurate temperature adjustment during welding are realized, and the production efficiency and consistency are improved. Further, the welding process can be accurately controlled, key temperature data can be monitored, and therefore welding quality and production efficiency are effectively improved.
Specifically, in some embodiments of the invention the getter module comprises: a vacuum pump 310 and a suction pipe 320; the vacuum pump 310 is disposed at one side of the furnace body 100, and the vacuum pump 310 is connected to the outer sidewall of the furnace body 100. One end of the air suction pipe 320 passes through the outer side wall of the furnace body 100 and is arranged in the cavity, and the other end of the air suction pipe 320 is connected with the vacuum pump 310, so that the air suction pipe 320 is used for guiding the air in the cavity into the vacuum pump 310 when the vacuum pump 310 pumps the air.
Specifically, referring to fig. 3 and 4, in some embodiments of the invention the placement module 200 includes: a connection frame 210, a placement frame 220, and a rotation motor 230; the connecting frames 210 are provided with two groups, and the two connecting frames 210 are oppositely arranged in the cavity. The placing frames 220 are provided with a plurality of placing frames 220, the placing frames 220 are respectively arranged between the two connecting frames 210 along the circumferential direction of the connecting frames 210, two ends of each placing frame 220 are respectively connected with the two connecting frames 210 in a rotating mode, and the placing frames 220 are used for placing semiconductors 900 to be welded. The rotating motor 230 is disposed inside the cavity, and the rotating motor 230 is fixedly connected with an inner sidewall of the cavity, wherein a rotating output end of the rotating motor 230 is clamped with the connecting frame 210, and the rotating motor 230 is used for driving the connecting frame 210 to move along a rotating direction of the rotating motor 230.
It can be appreciated that, through the combination of the two groups of connection frames 210 and the placement frames 220, a plurality of semiconductors 900 to be soldered can be placed at the same time, so that the problem that the soldering quality of the semiconductors is affected due to the fact that the vacuum environment cannot be sealed absolutely caused by excessive manual participation during the soldering of the semiconductors is effectively avoided.
Specifically, referring to FIG. 5, in some embodiments of the invention a welding module includes: a welding box 410, a telescopic connection pipe 420, and a lifting unit 430; the welding box 410 is arranged in the cavity, a groove is formed in the bottom of the welding box 410, and a through hole 413 and a temperature detection module 600 are arranged in the groove; the telescopic connecting pipe 420 is arranged at the top end of the welding box 410, one end of the telescopic connecting pipe 420 is embedded in the outer side wall of the welding box 410, the other end of the telescopic connecting pipe 420 penetrates through the inner top surface of the cavity and is communicated with the air duct 500, and the telescopic connecting pipe is used for guiding air guided by the air duct 500 into the welding box 410; the lifting units 430 are arranged in two groups, the two lifting units 430 are oppositely arranged on two sides of the telescopic connecting pipe 420, one end of each lifting unit 430 is connected with the inner top surface of the cavity, the other end of each lifting unit 430 is connected with the welding box 410, and the lifting units 430 are used for driving the welding box 410 to move along the lifting direction of the lifting units 430.
Specifically, in some embodiments of the invention the weld enclosure 410 includes: a housing and heating module 412; the heating modules 412 are provided with two groups, and the two heating modules 412 are oppositely arranged at two sides of the through hole 413, and two ends of the heating modules 412 are respectively connected with the inner top surface and the inner bottom surface of the box body.
It will be appreciated that by the arrangement of the weld box 410, a welding operation can be performed inside the cavity, while the through holes 413 and the temperature detection module 600 in the groove can monitor critical temperature data during welding, thereby ensuring the quality and stability of the weld. The use of the telescopic connection pipe 420 enables the gas guided by the gas guide pipe 500 to be accurately guided into the welding box 410, and provides necessary atmosphere and temperature environment for the welding process. The provision of the elevation unit 430 allows flexible movement of the welding carriage 410 in the elevation direction, facilitating adjustment of the welding position and angle, thereby achieving a welding operation with higher accuracy. The dual set arrangement of heating modules 412 may provide a balanced heating effect, ensuring a uniform temperature distribution inside the weld enclosure 410. Further effectively ensures that the welding quality and the welding efficiency of the semiconductor are improved.
Specifically, referring to fig. 6, in some embodiments of the present invention the control module includes: an acquisition unit and a control unit; the acquiring unit is electrically connected with the air duct 500, the temperature detecting module 600 and the two heating modules 412, and the acquiring unit is used for acquiring the temperature information of the air flowing through the air duct 500, the temperature information of the air flowing out of the through holes 413, the temperature information of the semiconductor 900 to be welded and the heating information of the heating modules 412. The control unit is electrically connected to the two heating modules 412, and is configured to control and adjust the heating information of the two heating modules 412 according to the temperature information of the gas guided by the inside of the gas guide pipe 500, the temperature information of the gas flowing out of the through hole 413, and the temperature information of the semiconductor 900 to be soldered.
Specifically, in some embodiments of the present invention, the control unit is further configured to obtain a real-time temperature L of the bonding material of the semiconductor 900 to be bonded, and the control unit is further configured to determine k0= (J-L) +h according to the formula; where K0 is a required heating temperature of the heating module 412, J is a required soldering temperature of the soldering material of the semiconductor 900 to be soldered, and H is a gas temperature of the internal flow guide of the gas guide tube 500. The control unit is further configured to obtain a real-time heating temperature K of the heating module 412, and determine whether the temperature of the heating module 412 is adjusted according to a relationship between the real-time heating temperature K and the required heating temperature K0: when K is greater than or equal to K0, the control unit determines that the temperature of the heating module 412 is greater than the required heating temperature, and does not need to adjust the heating temperature of the heating module 412. When K is less than K0, the control unit determines that the temperature of the heating module 412 is not satisfied with the required heating temperature, and adjusts the heating temperature of the heating module 412 according to the relationship between the real-time heating temperature K and the required heating temperature K0.
Specifically, in some embodiments of the present invention, the control unit is further configured to obtain a real-time temperature L of the bonding material of the semiconductor 900 to be bonded, and the control unit is further configured to determine k0= (J-L) +h according to the formula; where K0 is a required heating temperature of the heating module 412, J is a required soldering temperature of the soldering material of the semiconductor 900 to be soldered, and H is a gas temperature of the internal flow guide of the gas guide tube 500. The control unit is further configured to obtain a real-time heating temperature K of the heating module 412, and determine whether the temperature of the heating module 412 is adjusted according to a relationship between the real-time heating temperature K and the required heating temperature K0: when K is greater than or equal to K0, the control unit determines that the temperature of the heating module 412 is greater than the required heating temperature, and does not need to adjust the heating temperature of the heating module 412. When K is less than K0, the control unit determines that the temperature of the heating module 412 is not satisfied with the required heating temperature, and adjusts the heating temperature of the heating module 412 according to the relationship between the real-time heating temperature K and the required heating temperature K0.
It is understood that by acquiring the real-time temperature of the soldering material of the semiconductor 900 to be soldered and the real-time heating temperature of the heating module 412, the control unit can monitor the temperature during soldering in real time. This helps in finding and solving the temperature anomaly problem in time, ensures that the welding process is in a proper temperature range, and thereby avoids unstable welding quality due to the temperature problem. Secondly, by controlling the temperature adjustment of the heating module 412, it is ensured that the actual temperature of the heating module 412 matches the required heating temperature, and accurate heating of the welding material can be achieved. This helps to maintain the welding temperature within an optimal range, thereby improving the quality of the weld and reducing the occurrence of welding defects. Finally, the control unit brings about the high efficiency of the welding process by automatic temperature adjustment and accurate welding temperature control. The manual intervention requirement is reduced, the risk of manual operation errors is reduced, and the stability and consistency of the welding process are improved, so that the welding speed is increased, and the production efficiency is improved.
Specifically, when the control unit selects the ith adjustment coefficient Xi to adjust the heating temperature of the heating module 412 and obtains the adjusted heating temperature F1 of the heating module 412 in some embodiments of the present invention, the method includes: the control unit is further configured to obtain a real-time temperature R of the gas flowing out of the through hole 413, and is further configured to obtain a maximum heated temperature T of the semiconductor 900 to be soldered, and determine whether the semiconductor 900 to be soldered can withstand the real-time temperature of the gas flowing out of the through hole 413 according to a relationship between the real-time temperature R of the gas and the maximum heated temperature T: when R is less than or equal to T, the control unit judges that the real-time temperature of the gas flowing out of the through hole 413 does not exceed the maximum heated temperature of the semiconductor 900 to be soldered. When R > T, the control unit determines that the real-time temperature of the gas flowing out of the through hole 413 exceeds the maximum heated temperature of the semiconductor 900 to be soldered, and corrects the heating temperature F1 of the adjusted heating module 412 according to the relationship between the real-time temperature R of the gas and the maximum heated temperature T.
Specifically, when the control module corrects the heating temperature F1 of the adjusted heating module 412 according to the relationship between the real-time temperature R and the maximum heated temperature T of the gas in some embodiments of the present invention, the method includes: the control module is further configured to obtain a temperature difference Δr between the real-time temperature R of the gas and the maximum heated temperature T, where Δr=r-T, compare the temperature difference Δr with a preset temperature difference, and select a corresponding correction coefficient according to the comparison result to correct the adjusted heating temperature F1 of the heating module 412: wherein, the first temperature difference DeltaR 1 and the second temperature difference DeltaR 2 are preset, the first correction coefficient U1, the second correction coefficient U2 and the third correction coefficient U3 are preset, and DeltaR 1 < DeltaR2; 1 > U2 > U3 > 0.85;
when ΔR is less than or equal to ΔR1, then a first correction factor U1 is selected to correct the adjusted heating temperature F1 of the heating module 412.
When Δr1 < Δr2is less than or equal to Δr2, then the second correction coefficient U2 is selected to correct the adjusted heating temperature F1 of the heating module 412.
When ΔR >. ΔR2, a third correction coefficient U3 is selected to correct the adjusted heating temperature F1 of the heating module 412.
When the control unit selects the i-th correction coefficient Ui to correct the adjusted heating temperature F1 of the heating module 412, i=1, 2,3, and sets the corrected heating temperature of the heating module 412 to F2, f2=f1×ui.
It can be understood that the real-time temperature of the gas flowing out of the through hole 413 and the maximum heated temperature of the semiconductor 900 to be soldered are obtained by the control unit, and by comparing the relationship between the two, it is determined whether the semiconductor 900 to be soldered can withstand the real-time temperature of the gas flowing out of the through hole 413. If the temperature of the gas in the through hole 413 does not exceed the maximum heated temperature of the semiconductor 900 to be soldered, it is confirmed that the semiconductor is not damaged by overheating during the soldering process, and the safety of the semiconductor device is ensured. Further, when the real-time temperature of the gas in the through hole 413 exceeds the maximum heated temperature of the semiconductor 900 to be soldered, the control unit compares the temperature difference with a preset temperature difference, and selects a corresponding correction coefficient according to the comparison result to correct the adjusted heated temperature of the heating module 412. And the control unit can automatically adjust the temperature of the heating module 412 according to the real-time temperature condition, so as to ensure that the temperature in the welding process is always within a safe range. Finally, the control unit corrects the heating temperature of the adjusted heating module 412 to different degrees. The accurate temperature control can keep the welding temperature in the optimal range, avoid the problem of welding quality caused by overheating or too low temperature, and improve the stability and consistency of welding.
In summary, the embodiment of the invention provides an intelligent temperature-controllable vacuum welding furnace for welding semiconductors, which is provided with a temperature detection module 600 at the bottom of an air duct 500, a placement frame 220 and the bottom of a welding module, so that the temperature detection module 600 can monitor and detect gas temperature information in the furnace and the temperature of welded semiconductor components in real time. The control module can intelligently control and adjust the placement module 200, the air suction module and the welding module according to the temperature information, so that the stability and uniformity of the welding temperature in the welding process are effectively ensured, and the welding quality and reliability are improved. Secondly, by providing the suction module, the furnace body 100 can suck the gas in the cavity during the welding process, thereby establishing a vacuum environment. The vacuum welding environment is favorable for reducing gas residues and pollution, avoiding gas interference to welding parts and further improving welding quality. Finally, the placement module 200 is provided so that the semiconductor components to be soldered can be conveniently placed in the furnace, facilitating the operation of the staff and ensuring the stability and safety of the soldered components.
The foregoing is merely an example of the present invention, and the scope of the present invention is not limited thereto, and all changes made in the structure according to the present invention should be considered as falling within the scope of the present invention without departing from the gist of the present invention.
It will be clear to those skilled in the art that, for convenience and brevity of description, the specific working process of the system described above and the related description may refer to the corresponding process in the foregoing method embodiment, which is not repeated here.
It should be noted that, in the system provided in the foregoing embodiment, only the division of the foregoing functional modules is illustrated, in practical application, the foregoing functional allocation may be performed by different functional modules, that is, the modules or steps in the embodiment of the present invention are further decomposed or combined, for example, the modules in the foregoing embodiment may be combined into one module, or may be further split into multiple sub-modules, so as to complete all or part of the functions described above. The names of the modules and steps related to the embodiments of the present invention are merely for distinguishing the respective modules or steps, and are not to be construed as unduly limiting the present invention.
Those of skill in the art will appreciate that the various illustrative modules, method steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both, and that the program(s) corresponding to the software modules, method steps, may be embodied in Random Access Memory (RAM), memory, read Only Memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art. To clearly illustrate this interchangeability of electronic hardware and software, various illustrative components and steps have been described above generally in terms of their functionality. Whether such functionality is implemented as electronic hardware or software depends upon the particular application and design constraints imposed on the solution. Those skilled in the art may implement the described functionality using different approaches for each particular application, but such implementation is not intended to be limiting.
The terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus/apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus/apparatus.
Thus far, the technical solution of the present invention has been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of protection of the present invention is not limited to these specific embodiments. Equivalent modifications and substitutions for related technical features may be made by those skilled in the art without departing from the principles of the present invention, and such modifications and substitutions will fall within the scope of the present invention.
The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention.
Claims (10)
1. An intelligent temperature-controllable vacuum welding furnace for semiconductor welding, which is characterized by comprising:
the furnace body is internally provided with a cavity;
the placing module is arranged in the cavity, one side of the placing module is connected with the inner side surface of the cavity, and the placing module is used for placing a semiconductor to be welded;
One end of the air suction module is connected with one side of the furnace body, the other end of the air suction module penetrates through the outer side wall of the furnace body and is arranged in the cavity, and the air suction module is used for sucking gas in the cavity;
the welding module is arranged in the cavity and fixedly connected with the inner top surface of the cavity, and a through hole is formed in the bottom of the welding module;
the gas guide pipe is arranged at the top of the furnace body, one end of the gas guide pipe penetrates through the top of the furnace body and is communicated with the through hole, and the gas guide pipe is used for guiding gas to the welding module;
the temperature detection modules are arranged in the air duct, the bottom of the placement frame and the bottom of the welding module respectively, and are used for detecting the temperature information of the air guided by the air duct, the temperature information of the flowing air in the through hole and the temperature information of the semiconductor to be welded;
the control module is respectively and electrically connected with the placement module, the air suction module, the welding module and the temperature detection module, and is used for controlling the placement module, the air suction module, the welding module and the temperature detection module.
2. The intelligent temperature-controllable vacuum soldering furnace for semiconductor soldering according to claim 1, wherein the suction module comprises:
the vacuum pump is arranged on one side of the furnace body and is connected with the outer side wall of the furnace body;
one end of the air suction pipe penetrates through the outer side wall of the furnace body and is arranged in the cavity, and the other end of the air suction pipe is connected with the vacuum pump, so that when the vacuum pump pumps gas, the air suction pipe is used for guiding the gas in the cavity into the vacuum pump.
3. The intelligent temperature-controllable vacuum soldering furnace for semiconductor soldering according to claim 1, wherein the placement module comprises:
the connecting frames are provided with two groups, and the two connecting frames are oppositely arranged in the cavity;
the plurality of placing frames are arranged and are respectively arranged between the two connecting frames along the circumferential direction of the connecting frames, two ends of each placing frame are respectively connected with the two connecting frames in a rotating way, and each placing frame is used for placing the semiconductor to be welded;
the rotating motor is arranged in the cavity and fixedly connected with the inner side wall of the cavity, the rotating output end of the rotating motor is clamped with the connecting frame, and the rotating motor is used for driving the connecting frame to move along the rotating direction of the rotating motor.
4. The intelligent temperature-controllable vacuum soldering furnace for semiconductor soldering according to claim 3, wherein the soldering module comprises:
the welding box is arranged in the cavity, a groove is formed in the bottom of the welding box, and a through hole and a temperature detection module are arranged in the groove;
the telescopic connecting pipe is arranged at the top end of the welding box, one end of the telescopic connecting pipe is embedded in the outer side wall of the welding box, the other end of the telescopic connecting pipe penetrates through the inner top surface of the cavity and is communicated with the air duct, and the telescopic connecting pipe is used for guiding air guided by the air duct into the welding box;
lifting unit sets up two sets of, and two lifting unit sets up relatively the telescopic connection pipe both sides, lifting unit one end with the top surface is connected in the cavity, the lifting unit other end with the welding box is connected, the lifting unit is used for driving the welding box is followed lifting unit lifting direction moves.
5. The intelligent temperature-controllable vacuum soldering furnace for semiconductor soldering according to claim 4, wherein the soldering tank comprises:
a case;
the heating modules are arranged in two groups, the two heating modules are oppositely arranged on two sides of the through hole, and two ends of each heating module are respectively connected with the inner top surface and the inner bottom surface of the box body.
6. The intelligent temperature-controllable vacuum soldering furnace for semiconductor soldering according to claim 5, wherein the control module comprises:
the acquisition unit is respectively and electrically connected with the air duct, the temperature detection module and the two heating modules, and is used for acquiring the temperature information of the air guided by the air duct, the temperature information of the air flowing out of the through hole, the temperature information of the semiconductor to be welded and the heating information of the heating modules;
and the control unit is respectively and electrically connected with the two heating modules, and is used for controlling and adjusting the heating information of the two heating modules according to the temperature information of the gas guided by the inside of the gas guide pipe, the temperature information of the gas flowing out of the through hole and the temperature information of the semiconductor to be welded.
7. The intelligent temperature-controllable vacuum soldering furnace for semiconductor soldering according to claim 6, wherein,
the control unit is also used for acquiring the real-time temperature L of the welding material of the semiconductor to be welded, and is also used for obtaining the real-time temperature L of the welding material of the semiconductor to be welded according to a formula K0= (J-L) +H;
wherein K0 is the required heating temperature of the heating module, J is the required welding temperature of the welding material of the semiconductor to be welded, and H is the internal diversion gas temperature of the gas guide tube;
The control unit is also used for acquiring the real-time heating temperature K of the heating module and judging whether the temperature of the heating module is adjusted according to the relation between the real-time heating temperature K and the required heating temperature K0;
when K is more than or equal to K0, the control unit judges that the temperature of the heating module is satisfied with the required heating temperature, and the heating temperature of the heating module is not required to be adjusted;
when K is smaller than K0, the control unit judges that the temperature of the heating module is not satisfied with the required heating temperature, and adjusts the heating temperature of the heating module according to the relation between the real-time heating temperature K and the required heating temperature K0.
8. The intelligent temperature-controllable vacuum welding furnace for semiconductor welding according to claim 7, wherein the control unit adjusts the heating temperature of the heating module according to the relation between the real-time heating temperature K and the required heating temperature K0, comprising:
the control unit is further used for obtaining a heating temperature difference delta K between the real-time heating temperature K and the required heating temperature K0, comparing the heating temperature difference delta K with a preset heating temperature difference, and selecting a corresponding adjusting coefficient according to a comparison result to adjust the heating temperature of the heating module;
Wherein, the first heating temperature difference delta K1 and the second heating temperature difference delta K2 are preset, the first adjustment coefficient X1, the second adjustment coefficient X2 and the third adjustment coefficient X3 are preset, and delta K1 < [ delta ] K2; x1 is more than 0.5 and less than X2 is more than X3 and less than 1;
when delta K is less than or equal to delta K1, selecting the first adjustment coefficient X1 to adjust the heating temperature of the heating module;
when delta K1 is less than or equal to delta K2, selecting the second adjustment coefficient X2 to adjust the heating temperature of the heating module;
when delta K > -delta K2, selecting the third adjustment coefficient X3 to adjust the heating temperature of the heating module;
when the control unit selects the ith adjustment coefficient Xi to adjust the heating temperature of the heating module, i=1, 2,3, and sets the adjusted heating temperature of the heating module to be F1, f1=f×xi, where F is the initial heating temperature of the heating module.
9. The intelligent temperature-controllable vacuum welding furnace for semiconductor welding according to claim 8, wherein when the control unit selects the i-th adjustment coefficient Xi to adjust the heating temperature of the heating module and obtains the adjusted heating temperature F1 of the heating module, comprising:
The control unit is further used for acquiring a real-time temperature R of the gas flowing out of the through hole, acquiring a maximum heated temperature T of the semiconductor to be welded, and judging whether the semiconductor to be welded can bear the real-time temperature of the gas flowing out of the through hole according to the relation between the real-time temperature R of the gas and the maximum heated temperature T;
when R is less than or equal to T, the control unit judges that the real-time temperature of the gas flowing out of the through hole does not exceed the maximum heated temperature of the semiconductor to be welded;
when R is more than T, the control unit judges that the real-time temperature of the gas flowing out of the through hole exceeds the maximum heated temperature of the semiconductor to be welded, and corrects the heating temperature F1 of the heating module after adjustment according to the relation between the real-time temperature R of the gas and the maximum heated temperature T.
10. The intelligent temperature-controllable vacuum welding furnace for semiconductor welding according to claim 9, wherein when the control module corrects the adjusted heating temperature F1 of the heating module according to the relation between the real-time temperature R of the gas and the maximum heated temperature T, comprising:
The control module is further used for obtaining a temperature difference DeltaR between the real-time temperature R of the gas and the maximum heated temperature T, deltaR=R-T, comparing the temperature difference DeltaR with a preset temperature difference, and selecting a corresponding correction coefficient according to a comparison result to correct the adjusted heating temperature F1 of the heating module;
wherein, the first temperature difference DeltaR 1 and the second temperature difference DeltaR 2 are preset, the first correction coefficient U1, the second correction coefficient U2 and the third correction coefficient U3 are preset, and DeltaR 1 < DeltaR2; 1 > U2 > U3 > 0.85;
when DeltaR is less than or equal to DeltaR 1, selecting a first correction coefficient U1 to correct the adjusted heating temperature F1 of the heating module;
when DeltaR 1 < DeltaR2 is less than or equal to DeltaR 2, selecting a second correction coefficient U2 to correct the adjusted heating temperature F1 of the heating module;
when DeltaR > DeltaR2, selecting a third correction coefficient U3 to correct the adjusted heating temperature F1 of the heating module;
when the control unit selects the ith correction coefficient Ui to correct the adjusted heating temperature F1 of the heating module, i=1, 2,3, and sets the corrected heating temperature F2 of the heating module, f2=f1×ui.
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