CN116913775A - Method for improving Ti residue of scribing groove after metal etching - Google Patents

Method for improving Ti residue of scribing groove after metal etching Download PDF

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Publication number
CN116913775A
CN116913775A CN202310850651.9A CN202310850651A CN116913775A CN 116913775 A CN116913775 A CN 116913775A CN 202310850651 A CN202310850651 A CN 202310850651A CN 116913775 A CN116913775 A CN 116913775A
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Prior art keywords
photoresist
metal
etching
grain boundary
improving
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王泽玉
李东
汪盼盼
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GTA Semiconductor Co Ltd
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GTA Semiconductor Co Ltd
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Priority to CN202310850651.9A priority Critical patent/CN116913775A/en
Publication of CN116913775A publication Critical patent/CN116913775A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The application provides a method for improving Ti residues of a scribing groove after metal etching, which is applied to the technical field of chip etching, and comprises the steps of providing a semiconductor device, coating photoresist on the metal surface of the semiconductor device, wherein the surface of the metal has grain boundaries; using inert gases and Cl 2 And simultaneously carrying out physical bombardment and chemical etching on the photoresist on the metal surface. The application bombards the photoresist on the metal surface by using inert gas, the photoresist at the grain boundary is far smaller than the photoresist at other positions, and the photoresist at the grain boundary is prepared by using inert gas and Cl 2 Is removed under the bombardment and etching of the wafer, avoids the generation of Ti residues at the dicing grooves caused by different etching progress at the grain boundary and the non-grain boundary due to the existence of photoresist at the grain boundary, thereby reducing the damage of Ti to the dicing blade, the photoresist at the grain boundary is removed by bombardment, and Cl 2 Byproducts generated by etching aluminum can be mixed with photoresist to form polymers attached to the metal side wall andthe photoresist protects the metal and other photoresist locations.

Description

Method for improving Ti residue of scribing groove after metal etching
Technical Field
The application relates to the technical field of chip etching, in particular to a method for improving Ti residues of a scribing groove after metal etching.
Background
In discrete devices, the existing metal layer is generally formed on an Oxide layer (Oxide) by using Chemical Vapor Deposition (CVD) sputtering, the structure is a lower layer Ti/tin+upper layer Al structure, after the metal layer is sputtered, the scribe line is opened and the pattern is required to be etched by photoresist coating-exposure developing, then the scribe line and the pattern are etched by metal, and then the passivation layer is filled by Physical Vapor Deposition (PVD). After the passivation layer is filled, the scribing groove and the lead opening are opened through dielectric etching, and finally each individual device is separated and packaged through scribing for application.
However, in CVD, high-temperature sputtering is generally used to improve the sputtering efficiency. The Al crystal grains can grow up under high temperature to cause the gaps at the grain boundaries of the deposited Al layer to become large, and the grain boundary phenomenon is displayed under the microcosmic condition. The Al layer is coated with a paste, and a small amount of photoresist flows into the grain boundaries. During development, the metal will reflect the energy of development, resulting in incomplete development at the grain boundaries.
The conventional Al etching steps are as follows: BT (break through) +me (Main etch) +oe (over etch). The Al is not protected by a passivation layer, the photoresist is directly coated on the surface of the Al, and part of the photoresist flows into the grain boundary of the Al. The BT is usually used as Cl 2 And BCl 3 Gas ratio 1:2, the bombardment (bombardment) capacity is insufficient to remove the photoresist in the Grain boundary. ME is used for Cl 2 The chemical etching capability is strong for the dominant gas combination, the etching rate of Al is greatly higher than that of photoresist, and partial time is used as the photoresist in the Grain boundary in the etching process, so that a small Al step is formed after the ME etching is finished.
The etching selectivity ratio of Al to photoresist is not high, the chemical etching capability is strong in the process of performing chemical etching, the etching rate of Al is larger than that of photoresist, and after the photoresist at the grain boundary is etched, other parts of Al are etched, so that a height difference is formed. Therefore, after the metal etching is completed, a small amount of Ti remains at the scribe line. Because the dielectric layer etching has high selectivity to metal, the residual Ti cannot disappear in the subsequent dielectric layer etching. Ti remained in the dicing stage can cause certain damage to the dicing blade due to the metal hardness of the Ti, so that the service life of the dicing blade is greatly reduced.
Based on this, a new solution is needed.
Disclosure of Invention
In view of this, the present disclosure provides a method for improving the Ti residue of the scribe line after metal etching, which can effectively remove the photoresist at the grain boundary, reduce the Ti residue of the scribe line after aluminum etching, reduce the damage of the residual Ti to the scribe line, and improve the service life of the scribe line.
The embodiment of the specification provides the following technical scheme: a method for improving the Ti residue of a scribing groove after metal etching comprises the steps of providing a semiconductor device, coating photoresist on the metal surface of the semiconductor device, wherein a grain boundary exists on the surface of the metal;
using inert gases and Cl 2 And simultaneously carrying out physical bombardment and chemical etching on the photoresist on the metal surface.
Optionally, after physical bombardment and chemical etching of the photoresist on the metal grain boundary surface, cl is adopted 2 And BCl 3 And chemically etching the photoresist on the metal surface of the semiconductor device.
Optionally, the semiconductor device is a discrete device.
Optionally, the metal on the surface of the semiconductor device is aluminum.
Optionally, the inert gas is Ar.
Optionally, during the physical bombardment and chemical etching of the photoresist on the metal grain boundary surface, the inert gas flow is higher than Cl 2 Flow rate.
Optionally by inert gas and Cl 2 And meanwhile, the time for carrying out physical bombardment and chemical etching on the photoresist on the surface of the aluminum grain boundary is 10-15s.
Optionally, the flow rate of Ar is 100-150sccm, and Cl 2 The flow rate of (2) is 30-40sccm.
Optionally by Cl 2 And BCl 3 The photoresist on the aluminum surface of the semiconductor device is chemically etched for 20-40s.
Alternatively, the process may be carried out in a single-stage,the Cl 2 The flow rate of the BCl is 30-50sccm 3 The flow rate of (2) is 60-120sccm.
Compared with the prior art, the beneficial effects that above-mentioned at least one technical scheme that this description embodiment adopted can reach include at least:
the photoresist on the metal surface is bombarded by using inert gas, the bombardment of inert atoms in short time has no influence on the morphology of the metal surface, and the photoresist at the grain boundary is far smaller than the photoresist at other positions, so that the photoresist at the grain boundary is prepared by using the inert gas and Cl 2 Is removed under the bombardment and etching of the wafer, avoids the difference of etching progress at the grain boundary and the non-grain boundary caused by the existence of photoresist at the grain boundary to form a height difference, and causes Ti residue at the scribing groove, thereby reducing the damage of Ti to the nicking tool and prolonging the service life of the nicking tool;
since the photoresist at other positions of the metal surface is far more than the photoresist at the grain boundary, the photoresist is prepared by mixing inert gas and Cl 2 Simultaneously, the photoresist on the metal surface is subjected to physical bombardment and chemical etching, the photoresist at the grain boundary is bombarded and removed, and the photoresist at other positions is far more than the photoresist at the grain boundary, and Cl 2 Can etch part of aluminum, cl 2 Byproducts from etching aluminum can mix with the photoresist to form polymers, which adhere to the metal sidewalls and photoresist to protect the metal and other photoresist. The morphology of the photoresist at other positions except the grain boundary is easily destroyed by simply using inert gas bombardment.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a structure of a metal layer of a discrete device in a method for improving the Ti residue of a scribe line after metal etching according to the present application;
FIG. 2 is a schematic diagram of the structure of the aluminum layer at the grain boundary in a method for improving the Ti residue of the scribe line after metal etching according to the present application;
FIG. 3 is a schematic diagram showing the morphology of an untreated aluminum metal layer before etching in a method for improving the Ti residue of a scribe line after metal etching according to the present application;
fig. 4 is a schematic diagram of the morphology of an untreated aluminum metal layer after etching in a method for improving the Ti residue of a scribe line after metal etching according to the present application.
FIG. 5 is a schematic diagram of untreated aluminum scribe line Ti residue in a method of improving the post-metal etch scribe line Ti residue according to the present application;
FIG. 6 is a flow chart of a method for improving the Ti residue of the scribe line after Al etching in the method for improving the Ti residue of the scribe line after metal etching according to the present application;
FIG. 7 is a schematic diagram showing the morphology of an aluminum metal layer before bombardment etching in a method for improving the Ti residue of a scribe line after metal etching according to the present application;
fig. 8 is a schematic diagram of the morphology of an aluminum metal layer after bombardment etching in the method for improving the Ti residue of the scribe line after metal etching according to the present application.
Detailed Description
Embodiments of the present application will be described in detail below with reference to the accompanying drawings.
Other advantages and effects of the present application will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present application with reference to specific examples. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. The application may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present application. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It is noted that various aspects of the embodiments are described below within the scope of the following claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the present disclosure, one skilled in the art will appreciate that one aspect described herein may be implemented independently of any other aspect, and that two or more of these aspects may be combined in various ways. For example, apparatus may be implemented and/or methods practiced using any number and aspects set forth herein. In addition, such apparatus may be implemented and/or such methods practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
It should also be noted that the illustrations provided in the following embodiments merely illustrate the basic concept of the present application by way of illustration, and only the components related to the present application are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In addition, in the following description, specific details are provided in order to provide a thorough understanding of the examples. However, it will be understood by those skilled in the art that the present application may be practiced without these specific details.
In discrete devices, the existing metal layer is typically formed on an Oxide layer (Oxide) using Chemical Vapor Deposition (CVD) sputtering, and has a structure of a lower Ti/tin+upper Al structure, as shown in fig. 1. After the metal layer is sputtered, the scribing groove and the pattern to be etched are opened through photoetching glue coating-exposure developing, then the scribing groove and the pattern to be etched are etched through metal, and then the passivation layer is filled through Physical Vapor Deposition (PVD). After the passivation layer is filled, the scribing groove and the lead opening are opened through dielectric etching, and finally each individual device is separated and packaged through scribing for application.
However, in CVD, high-temperature sputtering is generally used to improve the sputtering efficiency. The Al grains are grown up by high temperature to cause the gaps at the grain boundaries of the deposited Al layer to become large, and the grain boundary phenomenon is shown at a microscopic level, as shown in fig. 2. The Al layer is coated with a paste, and a small amount of photoresist flows into the grain boundaries. During development, the metal will reflect the energy of development, resulting in incomplete development at the grain boundaries. Under the existing Al etching technology, the metal layer of the discrete device has a two-layer film structure, and a three-step etching method is mostly adopted, namely Al etching, ti/TiN etching and Ti/TiN over etching, as shown in fig. 3 and 4.
In the Al etching step, as the etching selection ratio of Al to photoresist is not high, the Al is not protected by a passivation layer, the photoresist is directly coated on the surface of the Al, and part of the photoresist flows into the grain boundary of the Al. In the chemical etching process, the chemical etching capability is strong, the etching rate of Al is larger than that of photoresist, and after the photoresist at the grain boundary is etched, other parts of Al are etched, so that a height difference is formed. Therefore, after the metal etching is completed, a small amount of Ti remains at the scribe line, as shown in fig. 5. Because the dielectric layer etching has high selectivity to metal, the residual Ti cannot disappear in the subsequent dielectric layer etching. Ti remained in the dicing stage can cause certain damage to the dicing blade due to the metal hardness of the Ti, so that the service life of the dicing blade is greatly reduced.
The conventional metal aluminum etching steps are as follows: BT (break through) +me (Main etch) +oe (over etch). In some discrete devices, since the Al is not protected by the passivation layer, the photoresist is directly coated on the Al surface, and a portion of the photoresist flows into the grain boundaries of the Al.
Typically: the BT (break through) adopts the following scheme: by Cl 2 And BCl 3 Ratio 1:2, the gas combination is used for removing Al oxide, and the bombardment capacity is not highSufficient to remove the photoresist in the grain boundaries. The ME (Main etch) process adopts the following scheme: the gas combination with Cl2 as the dominant material has strong chemical etching capability, the etching rate of Al is greatly higher than that of photoresist, and partial time is used as the photoresist in the grain boundary in the etching process, so that a small Al step is formed after the ME etching is finished.
According to the method, a Dry clean (Dry cleaning) step of 10-15s is added before a BT (break through) step for a DPS (decouple plasma source) metal etching machine to pretreat residual photoresist in a grain boundary. Ar is a high atomic mass gas, which can greatly improve the bombardment effect on photoresist in a grain boundary; the Al etching is mainly chemical etching, and the Ar bombardment of 10-15s has negligible influence on the etching morphology of Al. By adding a Dry clean high physical bombardment step before the BT step, and low chemical etching, the photoresist at other positions of the metal surface in the semiconductor device is far more than the photoresist at the grain boundary, and the inert gas and Cl are used for preparing the photoresist at the grain boundary 2 Simultaneously, the photoresist on the metal surface is subjected to physical bombardment and chemical etching, the photoresist at the grain boundary is bombarded and removed, and the photoresist at other positions is far more than the photoresist at the grain boundary, and Cl 2 Can etch part of aluminum, cl 2 The byproducts generated by etching aluminum can be mixed with photoresist to form polymers, the generated polymers are attached to the side wall of metal and the photoresist to protect the photoresist at the metal and other positions, and the etching morphology of Al and the photoresist on the surface is ensured on the basis of removing the residual photoresist at the grain boundary. Photoresist at grain boundary under inert gas and Cl 2 Is removed under the bombardment and etching of the wafer, avoids the difference of etching progress at the grain boundary and the non-grain boundary caused by photoresist at the grain boundary, forms height difference, and causes Ti residue at the scribing groove, thereby reducing the damage of Ti to the nicking tool and prolonging the service life of the nicking tool.
Based on this, as shown in fig. 6, the embodiment of the present specification proposes a method for improving the residual of the scribe line Ti after metal etching including,
s1, providing a semiconductor device, wherein photoresist is coated on the metal surface of the semiconductor device, a grain boundary exists on the surface of the metal, and the photoresist exists in the grain boundary;
s2, inert gas and Cl are adopted 2 And simultaneously carrying out physical bombardment and chemical etching on the photoresist on the metal surface.
By using inert gas to bombard the photoresist on the metal surface, the photoresist at the grain boundary is far smaller than the photoresist at other positions, the short-time bombardment of inert atoms has no influence on the morphology of the metal surface, and the photoresist at the grain boundary is formed by the inert gas and Cl 2 Is removed under the bombardment and etching of the wafer, avoids the difference of etching progress at the grain boundary and the non-grain boundary caused by photoresist at the grain boundary, forms height difference, and causes Ti residue at the scribing groove, thereby reducing the damage of Ti to the nicking tool and prolonging the service life of the nicking tool.
Since the photoresist at other positions of the metal surface is far more than the photoresist at the grain boundary, the photoresist is prepared by mixing inert gas and Cl 2 Simultaneously, the photoresist on the metal surface is subjected to physical bombardment and chemical etching, the photoresist at the grain boundary is bombarded and removed, and Cl 2 Can etch part of metal, cl 2 Byproducts generated by etching metal react with photoresist to form polymer, and the generated polymer adheres to the side wall of the metal and the photoresist to protect the metal and the photoresist at other positions. The pure use of inert gas bombardment is easy to damage the morphology of the photoresist at other positions except the grain boundary due to the protection of the polymer generated by etching.
In the embodiment of the application, the semiconductor device is a discrete device, and the metal on the surface of the semiconductor is metallic aluminum. Cl 2 The byproducts generated by the reaction of etching the metal aluminum can be mixed with the photoresist to form a polymer, and the generated polymer is attached to the side wall of the metal aluminum and the photoresist to protect the photoresist at the metal and other positions.
In an embodiment of the present application, the inert gas is a high atomic mass gas Ar. The bombardment force of the high-atomic-mass gas on the photoresist is stronger, and the physical bombardment rate of the photoresist on the aluminum grain boundary surface can be effectively improved by using the high-atomic-mass gas Ar.
In the embodiment of the application, the flow rate of inert high atomic mass gas Ar is higher than Cl in the process of carrying out physical bombardment and chemical etching on the photoresist on the surface of the metal grain boundary 2 Is a flow rate of (a). By adjusting inert high atomic mass gases Ar and Cl 2 So that the flow rate of the inert high atomic mass gas Ar is higher than Cl 2 Due to the flow rate of Cl 2 Aluminum and photoresist are etched, and inert high atomic mass gas Ar is used for bombarding and cleaning the photoresist at the grain boundary, so that Cl is reduced 2 The effect of excessive content on the micro-morphology of the aluminum surface can be reduced 2 The etching rate of the aluminum surface is improved, the accuracy of the bombardment of the photoresist by inert high atomic mass gas Ar is improved, and the reduction of the etching rate caused by Cl 2 The effect of etching on the aluminum metal surface and photoresist morphology.
By inert high atomic mass gases Ar and Cl 2 And simultaneously carrying out physical bombardment and chemical etching on the photoresist on the surface of the aluminum grain boundary, wherein the bombardment and etching time is 10-15s. The flow rate of the inert high atomic mass gas Ar is 100-150sccm, the Cl 2 The flow rate of (2) is 30-40sccm. The photoresist at the aluminum grain boundary can be effectively removed within the time and flow range of bombardment etching, and the photoresist outside the metal aluminum and the grain boundary is protected, so that the influence on the microscopic morphology of the photoresist outside the metal aluminum and the grain boundary is reduced.
Ar is high atomic mass gas, and the photoresist at the grain boundary can be effectively removed by bombarding the photoresist at the grain boundary by using the high atomic mass gas, so that the difference in etching progress at the grain boundary and the non-grain boundary due to the existence of the photoresist at the grain boundary is avoided, the formation of height difference is avoided, and the generation of Ti residues at the scribing groove is caused, thereby reducing the damage of Ti to the nicking tool and prolonging the service life of the nicking tool. At the same time reduce Cl 2 The etching rate of the aluminum is reduced, so that the influence on the Al morphology in the etching process is reduced.
After physical bombardment and chemical etching of the photoresist on the surface of the metal grain boundary, cl is adopted 2 And BCl 3 And chemically etching the photoresist on the metal surface of the semiconductor device.
By Cl 2 And BCl 3 Light to aluminum surface of discrete deviceThe time for chemical etching of the photoresist is 20-40s. The Cl 2 The flow rate of the catalyst is 30-50sccm, the Cl 2 The flow rate of (2) is 60-120sccm.
As shown in FIG. 7 and FIG. 8, the application removes the photoresist at the aluminum grain boundary by Ar atom bombardment, which is convenient for Cl in the subsequent process 2 And BCl 3 The photoresist and the oxide on the aluminum surface are bombarded and cleaned, so that Ti residues are avoided in the etching process because the photoresist flows into the grain boundary, the damage of Ti to the nicking tool is reduced, and the service life of the nicking tool is prolonged.
The photoresist on the metal surface is bombarded by using inert gas, the bombardment of inert atoms in short time has no influence on the morphology of the metal surface, and the photoresist at the grain boundary is far smaller than the photoresist at other positions, so that the photoresist at the grain boundary is prepared by using the inert gas and Cl 2 Is removed under the bombardment and etching of the wafer, avoids the difference of etching progress at the grain boundary and the non-grain boundary caused by photoresist at the grain boundary, forms height difference, and causes Ti residue at the scribing groove, thereby reducing the damage of Ti to the nicking tool and prolonging the service life of the nicking tool.
Since the photoresist at other positions on the metal surface is far more than the photoresist at the grain boundary, the morphology of the photoresist at other positions except the grain boundary is easily damaged by simply using inert gas bombardment. The application is realized by mixing inert gas with Cl 2 Simultaneously, the photoresist on the metal surface is subjected to physical bombardment and chemical etching, the photoresist at the grain boundary is bombarded and removed, and the photoresist at other positions is far more than the photoresist at the grain boundary, and Cl 2 Can etch part of aluminum, cl 2 Byproducts from etching aluminum can mix with the photoresist to form polymers, which adhere to the metal sidewalls and photoresist to protect the metal and other photoresist. Since the content of the inert high atomic mass gas is higher than Cl 2 Thus reducing Cl 2 The etching rate of the aluminum is further reduced, thereby further reducing the Cl caused in the etching process 2 The effect of too high a content on the morphology of the metallic Al.
In this specification, identical and similar parts of the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, the description is relatively simple for the embodiments described later, and reference is made to the description of the foregoing embodiments for relevant points.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present application should be included in the present application. Therefore, the protection scope of the application is subject to the protection scope of the claims.

Claims (10)

1. A method for improving the Ti residue of a scribing groove after metal etching is characterized by comprising the following steps: providing a semiconductor device, wherein photoresist is coated on the surface of metal of the semiconductor device, and the surface of the metal is provided with grain boundaries;
using inert gases and Cl 2 And simultaneously carrying out physical bombardment and chemical etching on the photoresist on the metal surface.
2. The method for improving the Ti residues of the scribe line after metal etching according to claim 1, wherein: after physical bombardment and chemical etching of the photoresist on the surface of the metal grain boundary, cl is adopted 2 And BCl 3 And chemically etching the photoresist on the metal surface of the semiconductor device.
3. The method for improving the Ti residues of the scribe line after metal etching according to claim 1, wherein: the semiconductor device is a discrete device.
4. The method for improving the Ti residues of the scribe line after metal etching according to claim 1, wherein: the metal on the surface of the semiconductor device is aluminum.
5. The method for improving the Ti residues of the scribe line after metal etching according to claim 1, wherein: the inert gas is Ar.
6. The method for improving the Ti residues of the scribe line after metal etching according to claim 1, wherein: during the physical bombardment and chemical etching of the photoresist on the surface of the metal grain boundary, the flow rate of the inert gas is higher than Cl 2 Flow rate.
7. The method for improving the Ti residues of the scribe line after metal etching according to claim 1, wherein: by inert gas and Cl 2 And meanwhile, the time for carrying out physical bombardment and chemical etching on the photoresist on the surface of the aluminum grain boundary is 10-15s.
8. The method for improving post-metal etching scribe line Ti residues of claim 6, wherein: the flow rate of the inert gas is 100-150sccm, the Cl 2 The flow rate of (2) is 30-40sccm.
9. The method for improving the Ti residues of the scribe line after metal etching according to claim 2, wherein: by Cl 2 And BCl 3 The photoresist on the aluminum surface of the semiconductor device is chemically etched for 20-40s.
10. The method for improving the Ti residues of the scribe line after metal etching according to claim 2, wherein: the Cl 2 The flow rate of the BCl is 30-50sccm 3 The flow rate of (2) is 60-120sccm.
CN202310850651.9A 2023-07-11 2023-07-11 Method for improving Ti residue of scribing groove after metal etching Pending CN116913775A (en)

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Application Number Priority Date Filing Date Title
CN202310850651.9A CN116913775A (en) 2023-07-11 2023-07-11 Method for improving Ti residue of scribing groove after metal etching

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Application Number Priority Date Filing Date Title
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