CN116909105A - Method for enhancing overlay accuracy measurement pattern measurement signal - Google Patents
Method for enhancing overlay accuracy measurement pattern measurement signal Download PDFInfo
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- CN116909105A CN116909105A CN202310847934.8A CN202310847934A CN116909105A CN 116909105 A CN116909105 A CN 116909105A CN 202310847934 A CN202310847934 A CN 202310847934A CN 116909105 A CN116909105 A CN 116909105A
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- 238000005259 measurement Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000002708 enhancing effect Effects 0.000 title claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 36
- 230000031700 light absorption Effects 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 190
- 150000002739 metals Chemical class 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000002835 absorbance Methods 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000011358 absorbing material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70158—Diffractive optical elements
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a method for enhancing overlay accuracy measurement graph measurement signals, which comprises the following steps: providing a semiconductor structure, wherein the semiconductor structure is formed with a front metal layer, and the front metal layer is formed with a front overlay mark; forming a high light absorption material layer above the front metal layer, wherein a part of the high light absorption material layer is in a grating structure; forming a through hole layer on the surface of the high light absorption material layer, wherein a through hole alignment mark is formed on the through hole layer, and the alignment degree of the through hole alignment mark and the front layer alignment mark is used for judging the alignment precision between the through hole layer and the front layer metal layer; wherein, the projection of the grating structure and the front layer overlay mark in the vertical direction has an overlapping area. The invention solves the problem that the measurement of the overlay accuracy is seriously affected because the optical measurement signal of the overlay mark of the front layer is weak due to the existence of the high-absorbance material.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for measuring a graph measuring signal by enhancing overlay accuracy.
Background
As integrated circuit device dimensions shrink, design and process complexity continue to increase, and as a result, the requirements for semiconductor manufacturing process control continue to increase, and more accurate measurements are needed.
For photolithography, overlay accuracy (Overlay) is a very important process control parameter, particularly for some critical layers, and has very high requirements for Overlay measurement and control.
Some materials with high absorbance may pose a great challenge for Overlay accuracy measurement, for example, in the LELE process or the back-end Meta-Via lithography process, a Hard Mask (Hard Mask) with high absorbance may have strong absorption to the Overlay measurement light source, in this case, the Overlay accuracy between the Via layer and the front-end Metal layer is measured, so that a sufficient optical measurement signal cannot be obtained, and thus the Overlay accuracy measurement accuracy is seriously affected.
At present, a common practice is to use an Overlay Mark windowing manner, as shown in fig. 1, and etch a hard mask layer with high absorbance (i.e. a high absorbance material layer) to remove the hard mask layer under the Mark region of the via layer, so as to achieve the purpose of improving the optical signal intensity of the via layer to the front Metal layer. However, the above method may introduce large open areas of the hard mask layer and excessively large differences in pattern size in the actual Cell, which may cause defects in the subsequent etching and polishing processes.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an objective of the present invention is to provide a method for enhancing overlay accuracy measurement pattern measurement signals, which is used for solving the problem that the overlay accuracy measurement is seriously affected due to the weak optical measurement signals of the front layer overlay mark caused by the presence of high-absorbance materials.
To achieve the above and other objects, according to the present invention, there is provided a method for enhancing overlay accuracy measurement pattern measurement signals, the method comprising:
providing a semiconductor structure, wherein a front metal layer is formed on the semiconductor structure, and a front overlay mark is formed on the front metal layer;
forming a high light absorption material layer above the front metal layer, wherein a partial area of the high light absorption material layer is in a grating structure;
forming a through hole layer on the surface of the high light absorption material layer, wherein a through hole alignment mark is formed on the through hole layer, and the alignment degree of the through hole alignment mark and the front layer alignment mark is used for judging the alignment precision between the through hole layer and the front layer metal layer;
and the projection of the grating structure and the front layer overlay mark in the vertical direction is provided with an overlapping area.
Optionally, the period of the grating structure is 100 nm-300 nm, and the line width is 70 nm-100 nm.
Optionally, the layer of highly light absorbing material comprises at least one of silicon oxide or silicon nitride.
Optionally, the high light absorption material layer is etched by an etching process to form the grating structure.
Optionally, the front layer overlay mark includes at least one front layer grating pattern group, and the front layer grating group includes a plurality of first stripe patterns arranged in parallel; the through hole alignment mark comprises at least one through hole grating pattern group, and the through hole grating pattern group comprises a plurality of second strip patterns which are arranged in parallel.
Optionally, the front layer overlay mark includes four front layer grating pattern groups, which are a first front layer grating pattern group, a second front layer grating pattern group, a third front layer grating pattern group and a fourth front layer grating pattern group, respectively; the through hole alignment mark comprises four through hole grating pattern groups, namely a first through hole grating pattern group, a second through hole grating pattern group, a third through hole grating pattern group and a fourth through hole grating pattern group;
the first front layer grating pattern group and the first through hole grating pattern group are adjacently arranged to form a rectangular first pattern, the second front layer grating pattern group and the second through hole grating pattern group are adjacently arranged to form a rectangular second pattern, the third front layer grating pattern group and the third through hole grating pattern group are adjacently arranged to form a rectangular third pattern, and the fourth front layer grating pattern group and the fourth through hole grating pattern group are adjacently arranged to form a rectangular fourth pattern;
the first, second, third and fourth patterns are arranged in a matrix of 2 rows and 2 columns, and in the first pattern and the third pattern, the first strip pattern and the second strip pattern extend along a first direction; in the second pattern and the fourth pattern, the first stripe pattern and the second stripe pattern extend in a second direction, and the first direction and the second direction are orthogonal.
Optionally, the width of the first stripe pattern is the same as the width of the second stripe pattern.
Optionally, the semiconductor structure further includes a metal layer, wherein the metal layer is formed on the lower surface of the high light absorption material layer, and an interlayer dielectric layer is formed above the front metal layer and between the front metal layer and the front metal layer.
Optionally, a first gap filling layer is arranged between the metals of the front metal layer; and a second gap filling layer is arranged between the metals of the metal layer of the intermediate layer.
Optionally, the front layer overlay mark is formed within the first gap-fill layer.
Optionally, the materials of the first gap filling layer and the second gap filling layer include oxides.
As described above, the method for enhancing overlay accuracy measurement pattern measurement signals prepares the high light absorption material layer above the front layer overlay mark of the front layer metal layer into a grating structure, so that the required wave band has better light transmittance, thereby effectively increasing the measurement window of the overlay accuracy and further enhancing the process tolerance.
Drawings
Fig. 1 is a schematic diagram of a conventional Overlay Mark windowing manner.
FIG. 2 is a flow chart of a method for enhancing overlay accuracy measurement pattern measurement signals according to the present invention.
Fig. 3 is a schematic cross-sectional view of the highly light-absorbing material layer of the present invention after forming a grating structure.
Fig. 4 is a schematic diagram of a mask plate with overlay marks according to the present invention.
Fig. 5 is a schematic diagram of a second pattern portion of the reticle after forming a grating structure according to the present invention.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 1 to 5. It should be noted that, the illustrations provided in the present embodiment are merely schematic illustrations of the basic concepts of the present invention, and only the components related to the present invention are shown in the illustrations, rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
As shown in fig. 2, the present embodiment provides a method for enhancing overlay accuracy measurement pattern measurement signals, the method comprising:
step 1) providing a semiconductor structure, wherein a front metal layer is formed on the semiconductor structure, and a front overlay mark is formed on the front metal layer;
step 2) forming a high light absorption material layer above the front metal layer, wherein part of the high light absorption material layer is in a grating structure;
step 3) forming a through hole layer on the surface of the high light absorption material layer, wherein a through hole alignment mark is formed on the through hole layer, and the alignment degree of the through hole alignment mark and the front layer alignment mark is used for judging the alignment precision between the through hole layer and the front layer metal layer;
and the projection of the grating structure and the front layer overlay mark in the vertical direction is provided with an overlapping area.
In this embodiment, the projection of the grating structure and the front layer overlay mark in the vertical direction has an overlapping area, that is, the position of the grating structure is located right above the position of the front layer overlay mark.
The method for measuring the pattern measurement signal to enhance the overlay accuracy according to the present embodiment is described in detail below.
As shown in fig. 3, in step 1), a semiconductor structure is provided, the semiconductor structure being formed with a front metal layer, and the front metal layer being formed with a front overlay mark.
Specifically, the semiconductor structure further comprises a metal layer, wherein the metal layer is formed on the lower surface of the high light absorption material layer, is formed above the front metal layer, and is formed with an interlayer dielectric layer between the front metal layer and the front metal layer.
In this embodiment, the material of the front dielectric layer includes silicon oxide, and is formed by deposition through a plasma enhanced chemical vapor deposition process.
Specifically, a first gap filling layer is arranged between the metals of the front metal layer; and a second gap filling layer is arranged between the metals of the metal layer of the intermediate layer.
As shown in fig. 3, in the present embodiment, the metals in the front metal layer are not shown, but the first gap filling layer between the metals and the front overlay mark formed in the first gap filling layer are shown. Likewise, the metals in the current metal layer are not shown, but the second gap-filling layer between the metals is shown.
Specifically, the front layer overlay mark is formed in the first gap filling layer.
As an example, the materials of the first gap filling layer and the second gap filling layer include oxides.
In step 2), a high light absorption material layer is formed above the front metal layer, and a partial area of the high light absorption material layer is in a grating structure.
Specifically, the period of the grating structure is 100 nm-300 nm, and the line width is 70 nm-100 nm.
Specifically, the high light absorption material layer includes at least one of silicon oxide or silicon nitride.
In this embodiment, the high light absorption material layer includes a silicon oxide layer and a silicon nitride layer, and the silicon nitride layer is formed on the surface of the silicon oxide layer.
Specifically, the high light absorption material layer is etched through an etching process to form the grating structure.
In the embodiment, the high light absorption material layer above the front layer alignment mark is prepared into a grating structure, and the period (pitch) and the line width (CD) of the grating structure are reasonably designed, so that the grating structure has better light projection rate in a required wave band; and by selecting a proper measurement wavelength, the aim of enhancing the effect of the front layer overlay mark optical signal can be fulfilled, so that the process tolerance is increased.
In step 3), a through hole layer is formed on the surface of the high light absorption material layer, a through hole alignment mark is formed on the through hole layer, and the alignment degree of the through hole alignment mark and the front layer alignment mark is used for judging the alignment precision between the through hole layer and the front layer metal layer.
In this embodiment, the via layer includes a spin-on filling layer, an anti-reflection layer and a photoresist layer, the spin-on filling layer fills the gap of the grating structure and extends to the surface of the high light absorption material layer, the anti-reflection layer is formed on the surface of the spin-on filling layer, and the photoresist layer is formed on the surface of the anti-reflection layer. And forming the through hole alignment mark in the photoresist layer by processing the photoresist layer.
Specifically, the front layer alignment mark comprises at least one front layer grating pattern group, and the front layer grating group comprises a plurality of first strip patterns which are arranged in parallel; the through hole alignment mark comprises at least one through hole grating pattern group, and the through hole grating pattern group comprises a plurality of second strip patterns which are arranged in parallel.
More specifically, the front layer overlay mark includes four front layer grating pattern groups, which are a first front layer grating pattern group 11, a second front layer grating pattern group 12, a third front layer grating pattern group 13 and a fourth front layer grating pattern group 14, respectively; the through hole alignment mark comprises four through hole grating pattern groups, namely a first through hole grating pattern group 21, a second through hole grating pattern group 22, a third through hole grating pattern group 23 and a fourth through hole grating pattern group 24;
the first front layer grating pattern group 11 and the first through hole grating pattern group 21 are adjacently arranged to form a rectangular first pattern 10, the second front layer grating pattern group 12 and the second through hole grating pattern group 22 are adjacently arranged to form a rectangular second pattern 20, the third front layer grating pattern group 13 and the third through hole grating pattern group 23 are adjacently arranged to form a rectangular third pattern 30, and the fourth front layer grating pattern group 14 and the fourth through hole grating pattern group 24 are adjacently arranged to form a rectangular fourth pattern 40;
the first, second, third and fourth patterns are arranged in a matrix of 2 rows and 2 columns, and in the first pattern 10 and the third pattern 30, the first stripe pattern and the second stripe pattern extend along a first direction X; in the second pattern 20 and the fourth pattern 40, the first stripe pattern and the second stripe pattern extend Y in a second direction, and the first direction X and the second direction Y are orthogonal (as shown in fig. 4).
As an example, the width of the first stripe pattern is the same as the width of the second stripe pattern.
Fig. 5 shows the patterns of the front layer overlay mark and the grating structure, and in this embodiment, the grating structure is formed above the front layer overlay mark to enhance the optical signal intensity, so as to avoid being affected when the overlay accuracy is measured.
In summary, according to the method for enhancing the overlay accuracy measurement pattern measurement signal, the high light absorption material layer above the front overlay mark of the front metal layer is prepared into the grating structure, so that the required wave band has good light transmittance, the measurement window of the overlay accuracy is effectively increased, and the process tolerance is further enhanced. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (11)
1. A method of enhancing overlay accuracy measurement pattern measurement signals, the method comprising:
providing a semiconductor structure, wherein a front metal layer is formed on the semiconductor structure, and a front overlay mark is formed on the front metal layer;
forming a high light absorption material layer above the front metal layer, wherein a partial area of the high light absorption material layer is in a grating structure;
forming a through hole layer on the surface of the high light absorption material layer, wherein a through hole alignment mark is formed on the through hole layer, and the alignment degree of the through hole alignment mark and the front layer alignment mark is used for judging the alignment precision between the through hole layer and the front layer metal layer;
and the projection of the grating structure and the front layer overlay mark in the vertical direction is provided with an overlapping area.
2. The method for enhancing overlay accuracy measurement of a patterned metrology signal of claim 1, wherein the grating structure has a period of 100nm to 300nm and a line width of 70nm to 100nm.
3. The method of claim 1 or 2, wherein the high light absorption material layer comprises at least one of silicon oxide or silicon nitride.
4. The method of claim 3, wherein the grating structure is formed by etching the high light absorption material layer by an etching process.
5. The method for enhancing overlay accuracy measurement of a pattern measurement signal according to claim 1, wherein the front layer overlay mark comprises at least one front layer grating pattern group, and the front layer grating group comprises a plurality of first stripe patterns arranged in parallel; the through hole alignment mark comprises at least one through hole grating pattern group, and the through hole grating pattern group comprises a plurality of second strip patterns which are arranged in parallel.
6. The method for enhancing overlay accuracy measurement of a pattern measurement signal according to claim 5, wherein the front overlay mark comprises four front layer grating pattern groups, a first front layer grating pattern group, a second front layer grating pattern group, a third front layer grating pattern group, and a fourth front layer grating pattern group, respectively; the through hole alignment mark comprises four through hole grating pattern groups, namely a first through hole grating pattern group, a second through hole grating pattern group, a third through hole grating pattern group and a fourth through hole grating pattern group;
the first front layer grating pattern group and the first through hole grating pattern group are adjacently arranged to form a rectangular first pattern, the second front layer grating pattern group and the second through hole grating pattern group are adjacently arranged to form a rectangular second pattern, the third front layer grating pattern group and the third through hole grating pattern group are adjacently arranged to form a rectangular third pattern, and the fourth front layer grating pattern group and the fourth through hole grating pattern group are adjacently arranged to form a rectangular fourth pattern;
the first, second, third and fourth patterns are arranged in a matrix of 2 rows and 2 columns, and in the first pattern and the third pattern, the first strip pattern and the second strip pattern extend along a first direction; in the second pattern and the fourth pattern, the first stripe pattern and the second stripe pattern extend in a second direction, and the first direction and the second direction are orthogonal.
7. The method of claim 6, wherein the width of the first stripe pattern is the same as the width of the second stripe pattern.
8. The method of claim 1, wherein the semiconductor structure further comprises a metal layer, the metal layer is formed on a lower surface of the high light absorption material layer, and an interlayer dielectric layer is formed above and between the metal layer and the metal layer.
9. The method of claim 8, wherein a first gap-filling layer is provided between the metals of the front metal layer; and a second gap filling layer is arranged between the metals of the metal layer of the intermediate layer.
10. The method of claim 9, wherein the front layer overlay mark is formed in the first gap-fill layer.
11. The method of claim 10, wherein the material of the first gap-fill layer and the second gap-fill layer comprises an oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310847934.8A CN116909105A (en) | 2023-07-11 | 2023-07-11 | Method for enhancing overlay accuracy measurement pattern measurement signal |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310847934.8A CN116909105A (en) | 2023-07-11 | 2023-07-11 | Method for enhancing overlay accuracy measurement pattern measurement signal |
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| CN116909105A true CN116909105A (en) | 2023-10-20 |
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| CN202310847934.8A Pending CN116909105A (en) | 2023-07-11 | 2023-07-11 | Method for enhancing overlay accuracy measurement pattern measurement signal |
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- 2023-07-11 CN CN202310847934.8A patent/CN116909105A/en active Pending
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