CN112394614A - Mask, mask defect repairing method, mask using method and semiconductor structure - Google Patents
Mask, mask defect repairing method, mask using method and semiconductor structure Download PDFInfo
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- CN112394614A CN112394614A CN201910753709.1A CN201910753709A CN112394614A CN 112394614 A CN112394614 A CN 112394614A CN 201910753709 A CN201910753709 A CN 201910753709A CN 112394614 A CN112394614 A CN 112394614A
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- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 4
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
Abstract
A mask, a mask defect repairing method, a mask using method and a semiconductor structure are provided, wherein the mask defect repairing method comprises the following steps: providing a substrate, wherein the substrate comprises a first area and a second area surrounding the first area, and the surface of the substrate is provided with a light shielding film; performing more than one first etching on the shading film to form a shading layer, wherein an opening is formed in the shading layer and exposes out of the surface of the first area; the first etching includes: forming a protective layer on the surface of the shading film; and carrying out a first electron beam etching process on the protective layer and the shading film on the first area. The method can reduce etching deviation and improve the mask defect repair success rate while reducing the repair cost of mask defects.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a mask, a mask defect repairing method, a mask using method and a semiconductor structure.
Background
In the semiconductor manufacturing process, the photolithography process is always a very important link, and the mask plate plays a significant role in photolithography. A typical reticle includes a transparent substrate, which may be, for example, a quartz substrate, and a light-shielding layer on the substrate, which typically needs to contain a metal. The mask plate forms a pattern required in a semiconductor manufacturing process in the light shielding layer, so that the pattern is formed on the silicon wafer through a series of processes.
In the manufacturing process of the mask, the manufactured mask has defects due to various unmeasured factors, such as a series of problems of environment, texture of a quartz substrate, photoresist and the like, however, the mask with the defects cannot be discarded due to the fact that the price of the mask is not good, and therefore the mask usually needs to be repaired.
However, the existing method for repairing the defects of the mask is high in cost.
Disclosure of Invention
The invention solves the technical problem of providing a mask, a mask defect repairing method, a mask using method and a semiconductor structure, so that the mask defect repairing cost is reduced, the etching deviation is reduced, and the mask defect repairing success rate is improved.
In order to solve the technical problem, the technical scheme of the invention provides a mask defect repairing method, which comprises the following steps: providing a substrate, wherein the substrate comprises a first area and a second area surrounding the first area, and the surface of the substrate is provided with a light shielding film; performing more than one first etching on the shading film to form a shading layer, wherein an opening is formed in the shading layer and exposes out of the surface of the first area; the first etching includes: forming a protective layer on the surface of the shading film; and carrying out a first electron beam etching process on the protective layer and the shading film on the first area.
Optionally, the process parameters of the first electron beam etching process include: the energy of the electron beam is 0.2 Kev-2 Kev, the adopted etching gas is a fluorine-containing compound, and the flow rate of the etching gas is 1 standard milliliter/minute-1000 standard milliliter/minute.
Optionally, a thickness of the light shielding film on the first region is smaller than a thickness of the light shielding film on the second region.
Optionally, the forming method of the light shielding film includes: forming an initial light shielding material on the surface of the substrate; and carrying out a second electron beam etching process on the initial shading material on the first area to form the shading film.
Optionally, the process parameters of the second electron beam etching include: the energy of the electron beam is 0.2 Kev-2 Kev, the adopted etching gas is a fluorine-containing compound, and the flow rate of the etching gas is 1 standard milliliter/minute-1000 standard milliliter/minute.
Optionally, when the number of times of the first etching is two or more, each first etching method includes: forming a protective layer on the surface of the shading film; performing a first-stage first etching process on the protective layer, and removing the protective layer on the first area until the shading film on the first area is exposed; after the protective layer on the first area is removed, a second-stage first etching process is carried out on the shading film of the first area by taking the protective layer as a mask until the top surface and the side wall surface of the shading film on the second area are exposed, and an initial shading layer and an initial opening in the initial shading layer are formed.
Optionally, the material of the protective layer includes: tetraethoxysilane, carbon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, boron nitride, or the like; the process for forming the protective layer includes: chemical vapor deposition process.
Optionally, the material of the protective layer includes: silicon oxide, molybdenum oxide, or chromium oxide; the process for forming the protective layer includes: and (4) carrying out chemical reaction.
Optionally, the substrate is made of a light-transmitting material; the light-transmitting material includes: quartz glass.
Optionally, the substrate is made of a reflective material; the light reflecting material includes: molybdenum, ruthenium or one or more of the compounds formed by molybdenum, ruthenium and silicon.
Optionally, the material of the light shielding film includes: chromium or molybdenum silicide.
Correspondingly, the technical scheme of the invention also provides a mask formed by adopting any one of the methods.
Correspondingly, the technical scheme of the invention also provides a use method of the mask, which comprises the following steps: providing a substrate; forming photoresist on the surface of the substrate; and carrying out exposure and development process on the photoresist by adopting the mask plate, and forming a photoresist layer on the surface of the substrate.
Correspondingly, the technical scheme of the invention also provides a semiconductor structure formed by adopting the mask plate using method.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
according to the mask defect repairing method in the technical scheme of the invention, a protective layer is formed on the surface of the photomask. In the first electron beam etching process, the electron beam inevitably generates scattered electrons in the process of etching the first area, and the scattered electrons etch the second area surrounding the first area. And the etching rate of the electron beam is greater than that of the scattered electrons, namely, the etching rate of the first region by the first electron beam etching process is greater than that of the second region. Therefore, when the first electron beam etching process is performed, the protective layer on the first region can be completely removed by controlling parameters, so that the light shielding film on the first region is exposed, and simultaneously, the protective layer on the second region is not completely removed. And then, the surface of the shading film of the second area is still provided with the protective layer, and the first electron beam etching process is continuously carried out, so that the exposed shading film on the first area is etched, and the shading film on the second area is not etched, thereby reducing the etching deviation. And the process for forming the protective layer is a conventional process, so that the cost is low. In conclusion, the method can reduce etching deviation and improve the mask defect repair success rate while reducing the repair cost of mask defects.
According to the mask provided by the technical scheme of the invention, because the mask defect repairing method can reduce etching deviation in the repairing process, the formed mask defects can be repaired more accurately, and the repairing rate of the mask is further improved.
According to the mask using method provided by the technical scheme of the invention, because the mask defect repairing method can reduce etching deviation in the repairing process, the accuracy of the exposure and development process of the photoresist by adopting the mask is higher, a photoresist layer with a more accurate pattern can be formed, the process requirement is met, and the performance of the formed semiconductor structure is favorably improved.
According to the semiconductor structure provided by the technical scheme of the invention, as the mask with the defects repaired more accurately is adopted to carry out the exposure and development process on the photoresist, the accuracy of etching the formed semiconductor structure is higher, and the performance of the formed semiconductor structure is better.
Drawings
FIGS. 1 to 4 are schematic cross-sectional views of steps of a mask defect repairing method;
FIGS. 5 to 11 are schematic cross-sectional views illustrating steps of a mask defect repairing method according to an embodiment of the present invention;
fig. 12-15 illustrate a method of using a reticle in accordance with an embodiment of the present invention.
Detailed Description
As described in the background art, the existing mask defect repair cost is high.
Fig. 1 to 4 are schematic structural diagrams of steps of a mask defect repairing method.
Referring to fig. 1 to 2, fig. 2 is a schematic cross-sectional view of fig. 1 along a tangential direction of M-N, providing a substrate 100, where the substrate 100 includes an area a and an area B surrounding the area a, and an initial light shielding layer 110 is disposed on a surface of the substrate 100.
Referring to fig. 3 to 4, fig. 3 is a schematic view based on fig. 1, fig. 4 is a schematic view based on fig. 2, the initial light-shielding layer 110 is etched, the light-shielding layer 120 is formed on the region B, the light-shielding layer 120 has an opening 130 therein, and the bottom of the opening 130 exposes the surface of the region a.
In the mask defect repairing method, the initial light shielding layer 110 is etched by using the electron beam 140 in cooperation with gas, so that the light shielding layer 120 and the opening 130 in the light shielding layer 120 are formed. The irradiation area of the electron beam 140 is a C area (shown in fig. 3), and the bottom of the opening in the light shielding layer formed by etching the electron beam 140 with a gas is expected to expose the surface of the C area.
However, since the electron beam 140 is collided by the surface of the surrounding structure during the emission process, scattered electrons 150 are inevitably generated, and the scattered electrons 150 and the gas cooperate to cause a certain etching, that is, a certain area around the irradiation area of the electron beam 140 is etched by the scattered electrons 150, so that the actually formed opening 130 exposes an area a, which is larger than the area C, resulting in etching deviation.
In order to solve the above technical problem, the range of electron scattering can be reduced by reducing the energy of the electron beam, so that the etching deviation is small, that is, the area of the a region is close to the C region. However, when the energy of the electron beam is reduced, in order to ensure the etching precision, the requirements on an electron beam control system and machine hardware are high, so that the requirements on the machine cost are high, and the cost for repairing defects of the mask is increased.
In order to solve the technical problem, the technical scheme of the invention provides a mask defect repairing method, which comprises the following steps: providing a substrate, wherein the substrate comprises a first area and a second area surrounding the first area, and the surface of the substrate is provided with a light shielding film; carrying out more than one time of first etching on the shading film to form a shading layer, wherein an opening is formed in the shading layer and exposes out of the surface of the first area, and the first etching comprises the following steps: forming a protective layer on the surface of the shading film; and carrying out a first electron beam etching process on the protective layer and the shading film on the first area. The method can reduce the repair cost of the mask defects and improve the repair efficiency of the mask defects.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 5 to 11 are schematic cross-sectional views of steps of a mask defect repairing method according to an embodiment of the invention.
Referring to fig. 5, a substrate 200 is provided, the substrate 200 includes a first region I and a second region II surrounding the first region I, and the surface of the substrate 200 has a light shielding film 210.
The substrate 200 and a light shielding layer formed on the surface of the substrate 200 later form a mask together.
In this embodiment, the substrate 200 is made of a light-transmitting material; the light-transmitting material includes: quartz glass.
In other embodiments, the substrate is a light reflecting material; the light reflecting material includes: molybdenum, ruthenium or one or more of the compounds formed by molybdenum, ruthenium and silicon.
As a material of the light-shielding film, any suitable material having light-shielding properties can be used; the material of the light shielding film includes: chromium or molybdenum silicide. In this embodiment, the material of the light shielding film 210 is molybdenum silicide. A chromium layer is formed on the surface of the substrate 200 by sputtering, thereby forming a light shielding film 210.
In the present embodiment, the thickness of the light shielding film 210 on the first region I is smaller than the thickness of the light shielding film 210 on the second region II.
The method of forming the light shielding film 210 includes: forming an initial light shielding material (not shown) on the surface of the substrate 200; performing a second electron beam etching process on the initial light-shielding material on the first region I to form the light-shielding film 210.
The process parameters of the second electron beam etching comprise: the energy of the electron beam is 0.2 Kev-2 Kev, the adopted etching gas is a fluorine-containing compound, and the flow rate of the etching gas is 1 standard milliliter/minute-1000 standard milliliter/minute.
Specifically, a chemical reaction occurs on the first region I by the collective action of the electron beam and the etching gas, so that the thickness of the light-shielding film 210 on the first region I is smaller than that of the light-shielding film 210 on the second region II.
In other embodiments, the thickness of the light-shielding film on the first region is the same as the thickness of the light-shielding film on the second region.
Carrying out more than one time of first etching on the shading film to form a shading layer, wherein an opening is formed in the shading layer and exposes out of the surface of a first area I, and the first etching comprises the following steps: forming a protective layer on the surface of the light shielding film 210; a first electron beam etching process is performed on the protective layer and the light shielding film 210 on the first region I.
When the number of times of the first etching is two or more, each first etching method includes: forming a protective layer on the surface of the shading film; performing a first-stage first etching process on the protective layer, and removing the protective layer on the first area until the shading film on the first area is exposed; after the protective layer on the first area is removed, the protective layer is used as a mask, a second-stage first etching process is carried out on the shading film of the first area until the top surface and the side wall surface of the shading film on the second area are exposed, and an initial shading layer and an initial opening in the initial shading layer are formed.
In this embodiment, the first etching is performed twice to form the light-shielding layer, and please refer to fig. 6 to 11 for a process of forming the light-shielding layer.
In other embodiments, the number of times of performing the first etching is one, and may be two or more.
Referring to fig. 6, a protection layer 220 is formed on the surface of the light shielding film 210.
In the present embodiment, the protection layer 220 is located on the surface of the light shielding film 210 on the first region I and on the sidewall surface and the top surface of the light shielding film 210 on the second region II.
Thickness range of the protective layer 220: 1 to 100 nanometers.
The significance of selecting said thickness range is: if the thickness is greater than 100 nanometers, on one hand, a certain etching deviation exists in the general etching process, the thickness of the protective layer 220 is thick, and the etching time required for correspondingly removing the protective layer 220 on the first region I is too long, so that the etching accuracy is not ensured, the mask defects are not repaired easily, and on the other hand, the cost waste is easily caused; if the thickness is less than 1 nm, the protection effect on the light shielding film 210 on the second region II cannot be guaranteed, and thus the repair of the mask defects is not facilitated.
The material of the protective layer 220 includes: tetraethoxysilane, carbon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride or boron nitride.
In this embodiment, the material of the protection layer 220 is tetraethoxysilane, and the process of forming the protection layer 220 is a chemical vapor deposition process; the process parameters of the chemical vapor deposition comprise: the energy range of the electron beam is 0.2 Kev-2 Kev; the deposition gas includes: tetraethoxysilane, the flow rate of the deposition gas is 1 standard milliliter per minute to 1000 standard milliliters per minute.
In other embodiments, the material of the protective layer comprises: silicon oxide, molybdenum oxide, or chromium oxide; the process of forming the protective layer is a chemical reaction.
The process for forming the protection layer 220 includes a chemical vapor deposition process or a chemical reaction, which are conventional processes and have low cost.
Referring to fig. 7, a first stage first etching process is performed on the protection layer 220 to remove the protection layer 220 on the first region I until the surface of the light shielding film 210 on the first region I is exposed.
It should be noted that, the first etching process in the first stage is a first electron beam etching process.
The parameters of the first electron beam etching process comprise: the energy of the electron beam is 0.2 Kev-2 Kev, the adopted etching gas is a fluorine-containing compound, and the flow rate of the etching gas is 1 standard milliliter/minute-1000 standard milliliter/minute.
Specifically, the protective layer 220 on the first region I is etched by condensing the electron beam to chemically react on the first region I in cooperation with the etching gas.
In the process of etching the first area I by the electron beam in the first electron beam etching process, scattered electrons are inevitably generated, and the scattered electrons etch a second area II surrounding the first area I. And, the electron density of the electron beam is greater than the electron density of the scattered electrons, so that the etching rate of the electron beam is greater than the etching rate of the scattered electrons, that is, the etching rate of the first electron beam etching process on the protective layer 220 on the first area I is greater than the etching rate on the protective layer 220 on the second area II. Therefore, in the first-stage first etching process, while the light shielding film 210 on the first region I is exposed, the protection layer 220 on the second region II is not completely removed, that is, the sidewall surface and the top surface of the light shielding film 210 on the second region II still have the protection layer 220 with a certain thickness, so that when the second-stage first etching process is continued, the light shielding film 210 on the first region I is etched less, and the light shielding film 210 on the second region II is still protected by the protection layer 220 and is not etched, thereby reducing the etching deviation caused to the second region II.
Referring to fig. 8, after removing the protection layer 220 on the first region I, the protection layer 220 is used as a mask to perform a second-stage first etching process on the light shielding film 210 of the first region I until the top surface and the sidewall surface of the light shielding film 210 on the second region II are exposed, so as to form an initial light shielding layer 230 and an initial opening 240 in the initial light shielding layer.
It should be noted that, the first electron beam etching process is adopted in the second-stage first etching process.
Since the protection layer 220 on the first area I is removed, the surface of the light shielding film 210 on the first area I is exposed, so that the electron beam in the first electron beam etching process can etch the light shielding film 210 on the first area I, and the thickness of the light shielding film 210 is reduced. Meanwhile, the scattered electrons generated in the first electron beam etching process etch the protective layer 220 on the second region II.
In this embodiment, the second-stage first etching process is performed until the top surface and the sidewall surface of the light-shielding film 210 on the second region II are exposed, and then the next first etching is performed, so as to prevent the light-shielding film 210 on the second region II from being damaged by the etching, and further reduce the etching deviation caused by the scattered electrons.
Referring to fig. 9, a protection layer 221 is formed on the surface of the initial light-shielding layer 230.
The material and the forming method of the protection layer 221 are the same as those of the protection layer 220 formed in fig. 6, and are not described again here.
The process of forming the protection layer 221 includes a chemical vapor deposition process or a chemical reaction, which are conventional processes and are low in cost.
Referring to fig. 10, a first stage first etching process is performed on the protection layer 221 to remove the protection layer 221 on the first region I until the initial light shielding layer 230 on the first region I is exposed.
The first stage first etching process has the same process parameters as the first stage first etching process performed in fig. 7, and details are not repeated here.
In the process of etching the first area I by the electron beam in the first electron beam etching process, scattered electrons are inevitably generated, and the scattered electrons etch a second area II surrounding the first area I. And the electron density of the electron beam is greater than the electron density of the scattered electrons, so that the etching rate of the electron beam is greater than the etching rate of the scattered electrons, that is, the etching rate of the first electron beam etching process on the protective layer 221 on the first region I is greater than the etching rate on the protective layer 221 on the second region II. Therefore, in the first-stage first etching process, while the initial light shielding layer 230 on the first region I is exposed, the protective layer 221 on the second region II is not completely removed, that is, the sidewall surface and the top surface of the initial light shielding layer 230 on the second region II still have the protective layer 221 with a certain thickness, so that when the second-stage first etching process is continued subsequently, the etching of the initial light shielding layer 230 on the first region I is reduced, and the initial light shielding layer 230 on the second region II is still protected by the protective layer 221 and cannot be etched, so that the etching deviation caused to the second region II can be reduced.
Referring to fig. 11, after removing the protection layer 221 on the first region I, the protection layer 220 is used as a mask to perform a second-stage first etching process on the initial light-shielding layer 230 of the first region I until the surface of the substrate 200 of the first region I is exposed, so as to form a light-shielding layer 250, wherein the light-shielding layer 250 has an opening 260 therein, and the opening 260 exposes the surface of the first region I.
The second-stage first etching process has the same process parameters as the second-stage first etching process performed in fig. 8, and details are not repeated here.
In this embodiment, when the initial light shielding layer 230 is etched by the second-stage first etching process, and the surface of the substrate 200 in the first region I is exposed, the surface of the top and the sidewall of the initial light shielding layer 230 in the second region II still have the protective layer 221 with a certain thickness, so that the surface of the initial light shielding layer 230 in the second region II is protected by the protective layer 221, and the initial light shielding layer 230 in the second region II is prevented from being damaged by the etching of the scattered electrons, thereby effectively reducing the etching deviation, and effectively repairing the defects of the formed light shielding layer 250.
In this embodiment, after forming the light-shielding layer 250, the method further includes: the protective layer 221 is removed.
In other embodiments, the second-stage first etching process etches the initial light-shielding layer, and when the substrate surface of the first region is exposed, the protective layer on the second region is also etched and removed, and the surface of the initial light-shielding layer on the second region is exposed.
Correspondingly, the embodiment of the invention also provides a mask formed by adopting the method.
The mask defect repairing method can reduce etching deviation in the repairing process, so that the formed mask defects can be accurately repaired, and the repairing rate of the mask is improved.
Correspondingly, the embodiment of the invention also provides a use method of the mask.
Fig. 12-15 illustrate a method of using a reticle in accordance with an embodiment of the present invention.
Referring to fig. 12, a substrate 300 is provided.
In this embodiment, the substrate 300 has a device layer (not shown). The device layer may include device structures, such as PMOS transistors or NMOS transistors. The device layer may further include an interconnect structure electrically connected to the device structure, and an insulating layer surrounding the device structure and the interconnect structure.
The material of the substrate 300 is a semiconductor material. In this embodiment, the material of the substrate 300 is silicon. In other embodiments, the material of the first substrate comprises silicon carbide, silicon germanium, a multi-component semiconductor material of group iii-v elements, silicon-on-insulator (SOI), or germanium-on-insulator. The multielement semiconductor material formed by III-V group elements comprises InP, GaAs, GaP, InAs, InSb, InGaAs or InGaAsP.
Referring to fig. 13, a photoresist 310 is formed on the surface of the substrate 300.
The process of forming the photoresist 310 includes: a spin coating process or a chemical vapor deposition process.
Next, an exposure and development process is performed on the photoresist 310 by using the mask formed by the above method, so as to form a photoresist layer on the surface of the substrate 300, and refer to fig. 14 to 15 for a specific process of forming the photoresist layer.
Referring to fig. 14, the photoresist 310 is exposed by the mask formed by the above method, and the material of the photoresist 310 in the exposed area is different from the material of the photoresist 310 in the unexposed area.
Referring to fig. 15, after the exposure process, the photoresist 310 is developed to form a photoresist layer 320 on the surface of the substrate 300.
The mask defect repairing method can reduce etching deviation in the repairing process, so that the accuracy of the exposure and development process of the photoresist 310 by adopting the mask is higher, the photoresist layer 320 with a more accurate pattern can be formed, the process requirements are met, and the performance of the formed semiconductor structure is improved.
Correspondingly, the embodiment of the invention also provides a semiconductor structure formed by adopting the mask plate using method.
Because the photoresist 310 is subjected to the exposure and development process by adopting the mask with the defects repaired more accurately, the etching accuracy of the formed semiconductor structure is higher, and the performance of the formed semiconductor structure is better.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (14)
1. A mask defect repairing method is characterized by comprising the following steps:
providing a substrate, wherein the substrate comprises a first area and a second area surrounding the first area, and the surface of the substrate is provided with a light shielding film;
performing more than one first etching on the shading film to form a shading layer, wherein an opening is formed in the shading layer and exposes out of the surface of the first area;
the first etching includes:
forming a protective layer on the surface of the shading film;
and carrying out a first electron beam etching process on the protective layer and the shading film on the first area.
2. The mask defect repairing method according to claim 1, wherein the process parameters of the first electron beam etching process comprise: the energy range of the electron beam is 0.2 Kev-2 Kev, the adopted etching gas is a fluorine-containing compound, and the flow rate of the etching gas is 1 standard milliliter/minute-1000 standard milliliter/minute.
3. The mask defect repairing method according to claim 1, wherein the thickness of the light shielding film on the first region is smaller than the thickness of the light shielding film on the second region.
4. The mask defect repairing method according to claim 3, wherein the forming method of the light shielding film comprises: forming an initial light shielding material on the surface of the substrate; and carrying out a second electron beam etching process on the initial shading material on the first area to form the shading film.
5. The mask defect repairing method according to claim 4, wherein the process parameters of the second electron beam etching comprise: the energy range of the electron beam is 0.2 Kev-2 Kev, the adopted etching gas is a fluorine-containing compound, and the flow rate of the etching gas is 1 standard milliliter/minute-1000 standard milliliter/minute.
6. The mask defect repairing method according to claim 1 or 3, wherein when the number of times of the first etching is two or more, each first etching method comprises: forming a protective layer on the surface of the shading film; performing a first-stage first etching process on the protective layer, and removing the protective layer on the first area until the shading film on the first area is exposed; after the protective layer on the first area is removed, a second-stage first etching process is carried out on the shading film of the first area by taking the protective layer as a mask until the top surface and the side wall surface of the shading film on the second area are exposed, and an initial shading layer and an initial opening in the initial shading layer are formed.
7. The mask defect repairing method according to claim 1, wherein the material of the protective layer comprises: tetraethoxysilane, carbon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride or boron nitride; the process for forming the protective layer includes: chemical vapor deposition process.
8. The mask defect repairing method according to claim 1, wherein the material of the protective layer comprises: silicon oxide, molybdenum oxide, or chromium oxide; the process for forming the protective layer includes: and (4) carrying out chemical reaction.
9. The mask defect repairing method according to claim 1, wherein the substrate is made of a light-transmitting material; the light-transmitting material includes: quartz glass.
10. The mask defect repairing method according to claim 1, wherein the substrate is made of a light reflecting material; the light reflecting material includes: molybdenum, ruthenium or one or more of the compounds formed by molybdenum, ruthenium and silicon.
11. The mask defect repairing method according to claim 1, wherein the material of the light shielding film comprises: chromium or molybdenum silicide.
12. A mask formed by the mask defect repairing method according to any one of claims 1 to 11.
13. A method for using a mask is characterized by comprising the following steps:
providing a substrate;
forming photoresist on the surface of the substrate;
the mask plate of claim 12 is used to perform an exposure and development process on the photoresist to form a photoresist layer on the substrate surface.
14. A semiconductor structure formed using the method of using a reticle of claim 13.
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| CN201910753709.1A CN112394614A (en) | 2019-08-15 | 2019-08-15 | Mask, mask defect repairing method, mask using method and semiconductor structure |
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| CN201910753709.1A CN112394614A (en) | 2019-08-15 | 2019-08-15 | Mask, mask defect repairing method, mask using method and semiconductor structure |
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| CN117038432A (en) * | 2023-09-01 | 2023-11-10 | 希科半导体科技(苏州)有限公司 | Defect repairing method for silicon carbide substrate |
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