CN116884862A - Bump manufacturing method based on 3D printing and chip packaging structure - Google Patents
Bump manufacturing method based on 3D printing and chip packaging structure Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
Abstract
The application provides a bump manufacturing method based on 3D printing and a chip packaging structure, wherein the method comprises the following steps: providing a wafer, wherein the wafer comprises a substrate, a process layer, a packaging layer and a plurality of bonding pads; forming a limiting metal layer on the surface of each bonding pad of the wafer, wherein each limiting metal layer is used for limiting the position of a bump; and (3) performing bump manufacture on the upper surface of each limiting metal layer through 3D printing, and obtaining bumps meeting preset heights after heating and reflow. According to the application, the bump volume after reflow is reversely pushed according to the limit size and the preset height input by the simulation model, and then the bump is manufactured by 3D printing according to the bump volume after reflow, so that the obtained bump meets the preset height requirement after reflow by reheating, and the problem of poor coplanarity of the bump is solved.
Description
Technical Field
The application relates to the field of semiconductor packaging, in particular to a bump manufacturing method based on 3D printing and a chip packaging structure.
Background
In the semiconductor packaging process, the bump manufacturing is a key ring, and the bump forming method in the related art mainly comprises the following four steps: firstly, coating solder paste on a bonding pad position through a steel mesh, and then reflowing to form a ball to form a bump; secondly, forming a bump with a certain height on the surface of the bonding pad in a chemical plating mode; thirdly, plating metal with specific diameter and height in the opening of the photoresist in an electroplating mode, and forming bumps by annealing or reflow into balls based on different materials; fourthly, coating soldering flux and arranging solder balls (ball implantation) at the positions of the bonding pads through a steel mesh, and then reflowing to form bumps.
The four bump manufacturing methods basically meet the requirements of most bumps, but with the development and application of technical requirements, the size difference (the problems of a large bonding pad, a small bonding pad, a round bonding pad and a special bonding pad) of the bonding pad on the same chip appears; flat bumps and relatively short bumps have little effect on the application, but when the bump height requirements are high, the coplanarity of bumps on the same wafer or even on the same chip becomes poor. This can make shorter bump bonds on the chip after the chip is mounted on the board poor or even in the presence of a dummy bond.
Disclosure of Invention
Aiming at the problems in the prior art, the bump manufacturing method based on 3D printing and the chip packaging structure are provided, and the technical problem of poor coplanarity of bumps is solved.
For this reason, the application provides a bump manufacturing method based on 3D printing, which comprises the following steps: providing a wafer, wherein the wafer comprises a substrate, a process layer, a packaging layer and a plurality of bonding pads; forming a limiting metal layer on the surface of each bonding pad of the wafer, wherein each limiting metal layer is used for limiting the position of a bump; and (3) performing bump manufacture on the upper surface of each limiting metal layer through 3D printing, and obtaining bumps meeting preset heights after heating and reflow.
In some embodiments, the bump making on the upper surface of the limiting metal layer through 3D printing includes: acquiring the limit size of a limit metal layer and the preset height of a bump, and calculating the bump volume before reflow corresponding to the preset height through a simulation model; and extruding bump materials corresponding to the bump volumes on the surface of the limiting metal layer through 3D printing according to the bump volumes, and manufacturing bumps.
In some embodiments, the extruding the bump material corresponding to the bump volume through 3D printing to perform bump fabrication includes: extruding one bump material corresponding to the bump volume through 3D printing to manufacture bumps, and forming a plurality of bumps with the same material; or, extruding one bump material corresponding to the bump volume of each bump in sequence through 3D printing to manufacture the bumps, so as to form a plurality of bumps with different materials; or, sequentially extruding a plurality of bump materials corresponding to the bump volume of each bump through 3D printing to manufacture the bumps, wherein each bump is formed to contain different material layers.
In some embodiments, the simulation model is obtained by: obtaining experimental data, wherein the experimental data comprises a plurality of groups of data, and each group of data comprises a limit size, a bump volume and a preset height which are in one-to-one correspondence; establishing a mapping relation between the limit size and the bump volume and a preset height by adopting a statistical method; and correcting the mapping relation by using the experimental data to obtain the simulation model.
In some embodiments, the spacing dimensions of the spacing metal layer include at least one of the following parameters: the lateral dimension of the limiting metal layer, the width of the inner groove and the depth of the inner groove.
In some embodiments, before bumping the upper surface of the stopper metal layer by 3D printing, the method further comprises: and coating a soldering flux layer on the surface of the limit metal layer.
In some embodiments, after obtaining the bump satisfying the preset height after the heat reflow, the method further includes: and removing the soldering flux layer.
In some embodiments, the material of each of the bumps comprises at least one of: gold, silver, copper, tin, nickel, aluminum, lead, conductive silver paste, semiconductors, superconductors, dielectric inks, polymethyl methacrylate, polydimethylsiloxane, polyimide, ceramics, and glass; and wherein the material of at least one of the bumps comprises at least one of: gold, silver, copper, tin, nickel, aluminum, lead, conductive silver paste, semiconductor, superconductor.
The embodiment of the application provides a chip packaging structure based on 3D printing, which comprises the following components: the wafer comprises a substrate, a process layer, a packaging layer and a plurality of bonding pads; a limiting metal layer is arranged on the surface of each bonding pad of the wafer, and each limiting metal layer is used for limiting the position of a bump; and the upper surface of each limit metal layer is provided with a bump meeting the preset height, and the bump is manufactured through 3D printing.
The application aims at: the bump on the surface of the chip is manufactured in a 3D printing mode, the bump volume after reflow is reversely pushed according to the limit size input by the simulation model and the preset height by utilizing the characteristic of 3D printing, and then the bump is manufactured by 3D printing according to the bump volume after reflow, so that the obtained bump meets the preset height requirement after being heated and reflowed again, the same bump height is realized, the problem of poor coplanarity of the bumps in the prior art is solved, the follow-up possible virtual soldering problem is reduced, and the yield and reliability are improved. And the coexistence of different bump structures or morphologies on the same chip is realized through 3D printing of customized bumps.
Drawings
Fig. 1 is a schematic flow chart of a bump manufacturing method based on 3D printing provided in embodiment 1 of the present application;
fig. 2 to 6 are schematic structural diagrams during the bump manufacturing method based on 3D printing according to embodiment 1 of the present application;
fig. 7 is a schematic structural diagram of a bump manufacturing method based on 3D printing according to embodiment 2 of the present application;
fig. 8 is a schematic diagram of a chip package structure based on 3D printing according to embodiment 3 of the present application.
Detailed Description
Specific embodiments of the present application will be described in more detail below with reference to the drawings. The advantages and features of the present application will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the application.
3D printing is a novel manufacturing and processing technology, and is based on digital model files, and a technology of constructing objects by using a 3D printer through a layer-by-layer printing mode by using powdery metal or colloid or plastic or molten metal and other bondable materials. The application applies the 3D printing technology to the bump manufacture in the semiconductor packaging process.
Embodiment 1 an embodiment of the present application provides a bump manufacturing method based on 3D printing, and fig. 1 is a schematic flow chart of a bump manufacturing method based on 3D printing provided in embodiment 1 of the present application, referring to fig. 1, the method includes:
step S101: fig. 2 to 5 are schematic structural views of a bump manufacturing method based on 3D printing according to embodiment 1 of the present application, referring to fig. 2, a wafer is provided, and the wafer includes a substrate 101, a process layer 102, a packaging layer 103 and a plurality of pads 104. The wafer has a conventional processing structure in which the material of the substrate 101 is not limited to silicon base (SiO, siN, etc.), carbon base, gaN, gaAs, sapphire, etc. The process layer 102 is a conventional processing structure, and is not limited in this regard, as the number of layers and structure will not be consistent depending on the design application. The encapsulation layer 103 further includes a multilayer structure such as a redistribution layer (RDL) and a polyimide film (PI), and the encapsulation layer 103 is not limited to an RDL of 0 to n layers and a PI layer of 0 to n layers. A plurality of pads 104 are obtained in the process layer 102 by etching through the encapsulation layer 103.
Step S102: forming a limiting metal layer on the surface of each bonding pad of the wafer, wherein each limiting metal layer is used for limiting the position of a bump; referring to fig. 3, a stopper metal layer 105 is formed on the surface of each pad 104, where the stopper metal layer 105 is used to define the bump location, and its shape includes, but is not limited to, a polygonal or shaped groove such as a circle, a square or a hexagon, and the lateral dimension of the stopper metal layer 105 is matched with the diameter of the bump formed, for example, when the bump is spherical, the lateral dimension of the stopper metal layer may be the same as the diameter of the bump formed, and the lateral dimension of the stopper metal layer may also be the same as any chord length of the bump formed to define the diameter of the bump formed. The stopper metal layer 105 is a multi-layered metal structure, and may be formed by electroless plating or electroplating, and serves as a bonding layer for interconnection, blocking the diffusion of bump material atoms to the underlying pad. The material of the stopper metal layer 105 includes, but is not limited to, a metal material such as Ti, cu, ni, au.
Step S103: and (3) performing bump manufacture on the upper surface of the limiting metal layer through 3D printing, and obtaining bumps meeting preset heights after heating and reflow.
In the embodiment of the present application, step S103 is completed by the following procedure:
step S31: and obtaining the limit size of the limit metal layer and the preset height of the bump, and calculating the bump volume before reflow corresponding to the preset height through a simulation model. Referring to fig. 4, the stopper metal layer 105 is used to define the bump location, and its lateral dimension is matched to the diameter of the bump formed, so as to define the diameter of the bump. Here, the limit dimension of the limit metal layer includes at least one of the following parameters: the lateral dimension D1 of the stopper metal layer 105, the width W1 of the inner groove, and the depth H1 of the inner groove. For example, when the spacing metal layer is circular, the lateral dimension D1 is the outer diameter of the spacing metal layer, and when the spacing metal layer is square, the lateral dimension D1 of the inner groove is the outer edge length. The preset height of the bump is the height of the bump obtained after ball implantation and high-temperature reflow, namely the height required in actual production, and the preset height can be set according to production requirements, or the original bump height of the wafer when repairing the wafer bump. The method comprises the steps of obtaining a limiting size and a preset height of a bump, inputting the limiting size and the preset height into a simulation model, and calculating the bump volume before reflow of the preset height through the simulation model.
Here, the simulation model is obtained by: obtaining experimental data, wherein the experimental data comprises a plurality of groups of data, and each group of data comprises a limit size, a bump volume and a preset height which are in one-to-one correspondence; establishing a mapping relation between the limit size and the bump volume and a preset height by adopting a statistical method; and correcting the mapping relation by using the experimental data to obtain the simulation model. Experimental data are obtained through multiple experimental collection, and a mapping relation, such as a functional relation, between the limiting size and the bump volume and the preset height is established by adopting a statistical method through analyzing the corresponding relation between the limiting size and the bump volume in each group of experimental data and the preset height; and carrying the limit size and the bump volume of the experimental data into the mapping relation to obtain a theoretical value of a preset height, and correcting the mapping relation according to an actual value of the preset height in the experimental data to obtain the simulation model. For example, a formula of a mapping relation is established by adopting a mathematical model, and the formula is calibrated by using experimental data to obtain a simulation model, so that the preset height output by the simulation model is infinitely close to an actual value.
Step S32: and extruding bump materials corresponding to the bump volumes on the surface of the limiting metal layer through 3D printing according to the bump volumes, and manufacturing bumps. It is understood that the material printed by 3D includes, but is not limited to, powdered metal, colloid, plastic, molten metal, etc., and after the above materials are melted, the bump material corresponding to the bump volume is extruded/dropped to make the bump at the corresponding limit metal layer. And (3) manufacturing the bump 106 on the limiting metal layer 105 by utilizing a 3D printing technology according to the bump volume before reflow calculated by the simulation model. In the embodiment of the present application, by using the 3D printing characteristic, the composition and structure of the bumps can be customized according to the requirement, and when all the bumps on the surface of the wafer are made of one material, step S32 is performed in a first manner: extruding one bump material corresponding to the bump volume through 3D printing to manufacture bumps, and forming a plurality of bumps with the same material; when the bumps on the wafer surface are made of different materials, but each bump is made of a uniform material, step S32 is performed in the second manner: and extruding one bump material corresponding to the bump volume of each bump in sequence through 3D printing to manufacture the bumps, so as to form a plurality of bumps with different materials. Printing a first bump, then replacing the material to print a second bump, and printing all bumps in sequence. Bump material is sprayed onto the surface of the limiting metal layer 105 at fixed points through a 3D printer nozzle. According to the shape and the limiting size of the limiting metal layer, the bump material of the volume of the bump extruded by the nozzle is controlled by controlling the material quantity and the spraying times of single spraying.
Step S33: and heating and reflowing to obtain the salient points meeting the preset height. The bump is manufactured by step S32, referring to fig. 5, and the bump is heated and reflowed to form a plurality of bumps 106 satisfying the preset height, where the shape of the bump 106 formed after reflow is not limited to an ellipsoid shape, a column shape, a square block shape, etc., and the transverse maximum size of the bump formed by heating and reflowing is equal to the transverse size D1 of the limiting metal layer, referring to fig. 6, and in some embodiments, the transverse maximum size D2 of the bump is greater than the transverse size D1 of the limiting metal layer. The bumps 106 have the same preset height, so that the bumps on the same wafer surface have coplanarity, and the problems of poor contact and cold joint caused by inconsistent bump heights are reduced.
In some embodiments, prior to step S103, the method further comprises: step S30: and coating a soldering flux layer on the surface of the limit metal layer. In some particular device cavities, the flux may be a gas. Optionally, a certain degree of cleaning and oxide removal process is required for the stopper metal layer prior to 3D printing.
The steps S101 to S103 are repeated to finish the fabrication of all the bumps on the surface of the wafer, and each bump is fabricated by 3D printing, which is specifically described that each bump may be fabricated by a single material, or the same bump may be fabricated by sequentially printing different materials, or different bumps may be fabricated by using different materials, and the bump shape may be fabricated according to the shape and the requirement of the limiting metal layer, so that the bumps with different components may be customized according to the requirement, and coexistence of bumps with different components and structures on the same chip may be realized.
In some embodiments, after obtaining the bump satisfying the preset height after the heat reflow, the method further includes: step S104: and removing the soldering flux layer. The flux layer coated on the surface of the limiting metal layer is removed, in other embodiments, the flux may be gas, and the flux is volatilized during the reflow process, so that the reference S104 is not required. Preferably, the flux may also be included in the bump material, for example, in 3D printing where the material contains a certain amount of material that may be used as a flux or to remove oxides.
In an embodiment of the present application, the material of each bump includes at least one of the following: metals such as gold, silver, copper, tin, nickel, aluminum, lead and the like, conductive silver paste, semiconductors, superconductors and other conductive materials, dielectric ink, polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS), polyimide (PI) and other polymers, ceramics, glass and other nonmetallic materials, and at least one of the bump materials comprises at least one of the following materials: gold, silver, copper, tin, nickel, aluminum, lead, conductive silver paste, semiconductor, superconductor. It is understood that the plurality of bumps on the wafer surface include at least one conductive bump made of a metal material or a conductive material and used as an electrical lead-out, and may further include a supporting bump made of an insulating material such as a polymer or a non-metal material and used only as a supporting structure. The positions and layout of the two functional bumps are not limited herein. Illustratively, the bumps located at the peripheral edge of the wafer are support bumps that serve as support structures, and the bumps located in the middle of the wafer are conductive bumps that serve as electrical leads. Illustratively, the bumps on the left half of the wafer are conductive bumps that serve as electrical leads, and the bumps on the right half of the wafer are support bumps that serve as support structures.
The bump manufacturing method provided by the embodiment of the application not only can be used for directly manufacturing the bumps on the surface of the wafer, but also can be used for repairing the damaged bumps on the surface of the chip, the 3D printing technology is applied to the chip packaging process, the bump volume before reflow is reversely pushed from the limit size and the preset height according to the simulation model, and the bumps are manufactured by adopting 3D printing, so that the bumps after heating and reflow meet the preset height requirement, the coplanarity requirement of the bumps on the surface of the chip is met, the follow-up possible virtual soldering problem is reduced, and the yield and reliability are improved. The characteristic of slicing printing by utilizing the 3D printing technology can customize the salient points with different components, and the coexistence of the salient points with different components and structures on the same chip is realized.
Embodiment 2 the present application provides a bump manufacturing method based on 3D printing, which is different from embodiment 1 in that step S32 is performed in a third manner: and sequentially extruding a plurality of bump materials corresponding to the bump volume of each bump through 3D printing to manufacture the bumps, wherein each bump is formed to contain different material layers.
Fig. 7 is a schematic structural diagram of a bump manufacturing method based on 3D printing according to embodiment 2 of the present application, referring to fig. 7, in an embodiment of the present application, components and structures of bumps may be customized according to requirements by using 3D printing characteristics, where when each bump 106 on a wafer surface is made of multiple materials, multiple bump materials corresponding to the bump volume may be sequentially extruded by 3D printing to manufacture the bump, for example, in fig. 6, the bump 106 is a coexistence of a lead-tin bump 106' and a copper pillar 106″ and optionally, the shape of the bump is not limited to an ellipsoid, a pillar, a square block, etc., so as to achieve coexistence of different structures or shapes on the same bump, and meet bump customization requirements.
Embodiment 3 the present application provides a chip package structure based on 3D printing, and fig. 8 is a schematic diagram of the chip package structure based on 3D printing provided in embodiment 3 of the present application, referring to fig. 8, in which the chip package structure 300 includes:
a wafer comprising a substrate 301, a process layer 302, a package layer 303, and a plurality of pads 304. A limiting metal layer 305 is arranged on the surface of each bonding pad 304 of the wafer, and each limiting metal layer 305 is used for limiting the bump position; the upper surface of each limit metal layer is provided with a bump 306 meeting the preset height, and the bump 306 is manufactured through 3D printing. Here, the bump 306 is defined by the stopper metal layer 305, and the bump is formed by, optionally, not limited to a sphere, a column, a square block, or the like, and is reflowed by heating to form a bump that satisfies the requirements. The material of the bump 306 can be customized according to the requirement, so that the coexistence of bumps with different components or structures on the same chip can be realized.
The foregoing is only illustrative of the preferred embodiments of the application and is not intended to be limiting, since various changes, modifications, substitutions and alterations can be made herein by those skilled in the art without departing from the spirit and scope of the application as defined by the appended claims and their equivalents.
Claims (9)
1. A bump manufacturing method based on 3D printing, the method comprising:
providing a wafer, wherein the wafer comprises a substrate, a process layer, a packaging layer and a plurality of bonding pads;
forming a limiting metal layer on the surface of each bonding pad of the wafer, wherein each limiting metal layer is used for limiting the position of a bump;
and (3) performing bump manufacture on the upper surface of each limiting metal layer through 3D printing, and obtaining bumps meeting preset heights after heating and reflow.
2. The method of claim 1, wherein the bump making on the upper surface of the stopper metal layer by 3D printing comprises:
acquiring the limit size of a limit metal layer and the preset height of a bump, and calculating the bump volume before reflow corresponding to the preset height through a simulation model;
and extruding bump materials corresponding to the bump volumes on the surface of the limiting metal layer through 3D printing according to the bump volumes, and manufacturing bumps.
3. The method according to claim 2, wherein the extruding bump material corresponding to the bump volume through 3D printing for bump fabrication comprises:
extruding one bump material corresponding to the bump volume through 3D printing to manufacture bumps, and forming a plurality of bumps with the same material; or alternatively, the first and second heat exchangers may be,
sequentially extruding one bump material corresponding to the bump volume of each bump through 3D printing to manufacture the bumps, so as to form a plurality of bumps with different materials; or alternatively, the first and second heat exchangers may be,
and sequentially extruding a plurality of bump materials corresponding to the bump volume of each bump through 3D printing to manufacture the bumps, wherein each bump is formed to contain different material layers.
4. A method according to claim 3, wherein the simulation model is obtained by:
obtaining experimental data, wherein the experimental data comprises a plurality of groups of data, and each group of data comprises a limit size, a bump volume and a preset height which are in one-to-one correspondence;
establishing a mapping relation between the limit size and the bump volume and a preset height by adopting a statistical method;
and correcting the mapping relation by using the experimental data to obtain the simulation model.
5. The method of claim 2, wherein the spacing dimension of the spacing metal layer comprises at least one of the following parameters: the lateral dimension of the limiting metal layer, the width of the inner groove and the depth of the inner groove.
6. The method of claim 1, wherein prior to bumping the upper surface of the stopper metal layer by 3D printing, the method further comprises: and coating a soldering flux layer on the surface of the limit metal layer.
7. The method of claim 5, wherein after obtaining bumps meeting a preset height after heat reflow, the method further comprises: and removing the soldering flux layer.
8. The method of any one of claims 1 to 6, wherein the material of each bump comprises at least one of: gold, silver, copper, tin, nickel, aluminum, lead, conductive silver paste, semiconductors, superconductors, dielectric inks, polymethyl methacrylate, polydimethylsiloxane, polyimide, ceramics, and glass; and wherein the material of at least one of the bumps comprises at least one of: gold, silver, copper, tin, nickel, aluminum, lead, conductive silver paste, semiconductor, superconductor.
9. Chip packaging structure based on 3D prints, characterized in that, include in the structure:
the wafer comprises a substrate, a process layer, a packaging layer and a plurality of bonding pads;
a limiting metal layer is arranged on the surface of each bonding pad of the wafer, and each limiting metal layer is used for limiting the position of a bump;
and the upper surface of each limit metal layer is provided with a bump meeting the preset height, and the bump is manufactured through 3D printing.
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