CN116865203A - Electronic load overcurrent protection method, electronic load and computer readable storage medium - Google Patents
Electronic load overcurrent protection method, electronic load and computer readable storage medium Download PDFInfo
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- CN116865203A CN116865203A CN202310642636.5A CN202310642636A CN116865203A CN 116865203 A CN116865203 A CN 116865203A CN 202310642636 A CN202310642636 A CN 202310642636A CN 116865203 A CN116865203 A CN 116865203A
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000005070 sampling Methods 0.000 claims description 30
- 238000005516 engineering process Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003211 malignant effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H1/00—Details of emergency protective circuit arrangements
- H02H1/0007—Details of emergency protective circuit arrangements concerning the detecting means
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
The application discloses an electronic load overcurrent protection method, an electronic load and a computer readable storage medium.
Description
Technical Field
The present application relates to the field of electronic load technologies, and in particular, to an electronic load overcurrent protection method, an electronic load, and a computer readable storage medium.
Background
An electronic load is a device used in the field of power testing that absorbs energy output by a power supply under test, dissipates it as heat to the environment, or feeds it back to the grid. When the electronic load works, high voltage and high current are born, so the electronic load often has various self-protection functions, such as overcurrent protection, namely, the electronic load is closed when the working current exceeds a preset threshold value, the energy of a tested power supply is not absorbed any more, the malignant reaction is avoided, and the aims of protecting the electronic load from being exploded, overheated and destroyed are fulfilled.
The traditional electronic load overcurrent protection technology triggers an overcurrent protection function after the working current of an electronic load is increased to a preset threshold value. However, in the operation process of the electronic load, after a certain module or MOSFET branch inside the device suddenly shorts, there is a process of increasing the working current of the electronic load, and the working current does not reach the preset threshold instantaneously. The traditional electronic load overcurrent protection technology must wait for the working current to be increased to a preset threshold value before triggering the overcurrent protection function, and before triggering the overcurrent protection function, part of power devices and circuits in the equipment may be burnt out, so that the protection effect is poor.
Disclosure of Invention
The present application aims to solve at least one of the technical problems existing in the prior art. Therefore, the application provides an electronic load overcurrent protection method, an electronic load and a computer readable storage medium, which can solve the problem of poor protection effect of the existing electronic load overcurrent protection technology.
According to an embodiment of the first aspect of the application, the electronic load overcurrent protection method comprises the following steps:
taking one MOSFET branch as a reference branch and the rest MOSFET branches as target branches;
synchronously acquiring reference current data and a plurality of target current data in real time, wherein the plurality of target current data are in one-to-one correspondence with a plurality of target branches, the reference current data comprise sampling time nodes and reference current values corresponding to the sampling time nodes, the reference current values are current values of the reference branches, the target current data comprise the sampling time nodes and target current values corresponding to the sampling time nodes, and the target current values are current values of the target branches;
and confirming whether the electronic load is over-current or not according to the reference current data and the target current data, and closing the electronic load when the electronic load is over-current.
The electronic load overcurrent protection method according to the embodiment of the first aspect of the application has at least the following beneficial effects:
by taking one MOSFET branch as a reference branch and the other MOSFET branches as target branches, synchronously acquiring reference current data and a plurality of target current data in real time, determining whether an electronic load has overcurrent according to the reference current data and the plurality of target current data, and closing the electronic load when the electronic load has overcurrent. Compared with the traditional electronic load overcurrent protection method, the electronic load overcurrent protection method provided by the embodiment of the application has the advantages that whether the electronic load is overcurrent or not is judged directly according to the reference current data and the target current data corresponding to the MOSFET branch circuit, so that the electronic load is turned off in time, the power devices in the MOSFET branch circuit are prevented from being burnt, and the protection performance is good.
According to some embodiments of the application, the electronic load is confirmed whether an overcurrent occurs by:
obtaining difference current data according to the reference current data and the target current data, wherein the difference current data comprises the sampling time node and the difference current value corresponding to the sampling time node, and the difference current value is an absolute value of a difference between the reference current value and the target current value corresponding to the sampling time node;
establishing a difference current time corresponding relation according to the difference current data;
and when the slope of the time corresponding relation of the difference current is longer than a for t seconds, confirming that the electronic load is over-current, wherein t is a positive number, and the value range of a is [1.5,3].
According to some embodiments of the application, the electronic load is determined to be over-current when the differential current value is greater than a preset safe current differential value.
According to some embodiments of the application, the preset safe current difference is obtained by:
acquiring a rated current value of a MOSFET of the target branch;
and b times of the rated current value is taken as the preset safe current difference value, and the value range of b is 0.1, 1.
An electronic load according to an embodiment of the second aspect of the present application includes:
at least one processor;
at least one memory for storing at least one program;
the electronic load over-current protection method as described above is implemented when at least one of said programs is executed by at least one of said processors.
The electronic load according to the embodiment of the second aspect of the present application has at least the following advantages:
by taking one MOSFET branch as a reference branch and the other MOSFET branches as target branches, synchronously acquiring reference current data and a plurality of target current data in real time, determining whether an electronic load has overcurrent according to the reference current data and the plurality of target current data, and closing the electronic load when the electronic load has overcurrent. Compared with the traditional electronic load, the electronic load of the embodiment of the application can be used for directly judging whether the electronic load is over-current or not according to the reference current data and the target current data corresponding to the MOSFET branch circuit, so that the electronic load can be turned off in time, the power devices in the MOSFET branch circuit can be prevented from being burnt, and the protection performance is good.
A computer readable storage medium according to an embodiment of the third aspect of the present application stores therein a processor-executable program for implementing the electronic load overcurrent protection method as described above when executed by a processor.
The computer-readable storage medium according to the embodiment of the third aspect of the present application has at least the following advantageous effects:
by taking one MOSFET branch as a reference branch and the other MOSFET branches as target branches, synchronously acquiring reference current data and a plurality of target current data in real time, determining whether an electronic load has overcurrent according to the reference current data and the plurality of target current data, and closing the electronic load when the electronic load has overcurrent. According to the computer readable storage medium of the second aspect of the embodiment of the application, whether the electronic load is over-current or not is judged directly according to the reference current data and the target current data corresponding to the MOSFET branch circuit, so that the electronic load is turned off in time, the power devices in the MOSFET branch circuit are prevented from being burnt, and the protection performance is good.
Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
The application is further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a circuit diagram of an electronic load according to an embodiment of the application;
FIG. 2 is a flow chart of an electronic load over-current protection method according to an embodiment of the application;
FIG. 3 is a flow chart of determining whether an electronic load is over-current according to an embodiment of the application;
FIG. 4 is a flow chart of obtaining a preset safe current difference value according to an embodiment of the application.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the application.
In the description of the present application, it should be understood that the direction or positional relationship indicated with respect to the description of the orientation, such as up, down, etc., is based on the direction or positional relationship shown in the drawings, is merely for convenience of describing the present application and simplifying the description, and does not indicate or imply that the apparatus or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application.
In the description of the present application, plural means two or more. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present application, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present application can be reasonably determined by a person skilled in the art in combination with the specific contents of the technical scheme.
As shown in fig. 1, the electronic load includes a plurality of MOSFET branches connected in parallel, each MOSFET branch includes a MOSFET, and as shown in fig. 2, the electronic load overcurrent protection method according to an embodiment of the application is applied to the electronic load, including but not limited to step S100, step S200, and step S300.
Step S100: taking one MOSFET branch as a reference branch and the other MOSFET branches as target branches;
in this step, one MOSFET branch is used as a reference branch, and a plurality of MOSFET branches are used as target branches, so that reference current data of the reference branch and target current data of the target branch can be collected in a subsequent step.
Step S200: synchronously acquiring reference current data and a plurality of target current data in real time, wherein the plurality of target current data are in one-to-one correspondence with a plurality of target branches, the reference current data comprise sampling time nodes and reference current values corresponding to the sampling time nodes, the reference current values are current values of the reference branches, the target current data comprise sampling time nodes and target current values corresponding to the sampling time nodes, and the target current values are current values of the target branches;
in the step, the reference current value and the target current value corresponding to the same sampling time node can be obtained by synchronously collecting the reference current data and the target current data corresponding to the target branches in real time, and the current value of the reference branch can be monitored in real time and the current value of each target branch can be monitored in real time.
Step S300: and confirming whether the electronic load is over-current or not according to the reference current data and the target current data, and closing the electronic load when the electronic load is over-current.
In this step, because the circuit structure of the electronic load is characterized in that each MOSFET branch is connected in parallel, in the actual working process, no matter how the output power of the electronic load changes, the current value of each MOSFET branch is always the same under normal conditions, and the multiple target current data are compared with the reference current data respectively, so as to confirm whether the multiple target branches or the reference branches are over-current, and when the target branches or the reference branches are over-current, the electronic load is confirmed to be over-current.
The comparison method between the target current data and the reference current data is not limited, and for example, a difference comparison, a ratio comparison, or the like may be performed.
According to the electronic load overcurrent protection method, one MOSFET branch is used as a reference branch, the other MOSFET branches are used as target branches, reference current data and a plurality of target current data are synchronously collected in real time, whether the electronic load is overcurrent or not is confirmed according to the reference current data and the target current data, and when the electronic load is overcurrent, the electronic load is closed. Compared with the traditional electronic load overcurrent protection method, the electronic load overcurrent protection method provided by the embodiment of the application has the advantages that whether the electronic load is overcurrent or not is judged directly according to the reference current data and the target current data corresponding to the MOSFET branch circuit, so that the electronic load is turned off in time, the power devices in the MOSFET branch circuit are prevented from being burnt, and the protection performance is good.
As shown in fig. 3, in one embodiment of the present application, it is confirmed whether an electronic load has an overcurrent by:
step S310: obtaining difference current data according to the reference current data and the target current data, wherein the difference current data comprises a sampling time node and a difference current value corresponding to the sampling time node, and the difference current value is an absolute value of a difference between the reference current value and the target current value of the corresponding sampling time node;
in the step, the difference calculation is carried out on the reference current value and the target current value corresponding to the same sampling time node, the absolute value of the difference between the reference current value and the target current value corresponding to the same sampling time node is obtained, and the difference current value of the sampling time node is obtained, and the difference of the current values between the reference branch and the target branch is reflected through the difference current value.
Step S320: establishing a difference current time corresponding relation according to the difference current data;
in this step, since the differential current data includes the sampling time node and the differential current value, a differential current time correspondence is established according to the differential current data so as to reflect the time-varying condition of the differential current value.
Step S330: when the slope of the time corresponding relation of the differential current is longer than a for t seconds, confirming that the electronic load is over-current, wherein t is a positive number, and the value range of a is [1.5,3];
in this step, the current value of each MOSFET branch is always the same under normal conditions, but the difference between the reference current value and the target current value is not necessarily zero due to sampling errors, circuit component characteristics, and the like, in other words, the difference current value is not necessarily zero, and therefore, whether the difference current value is abnormal or not is determined according to the slope of the difference current time correspondence relationship, thereby confirming whether or not an overcurrent occurs in the electronic load.
It can be understood that when the slope of the corresponding relationship between the differential current and time is longer than a for t seconds, that is, within t seconds, the differential current value corresponding to each sampling time node is more than a multiple of the differential current value corresponding to the adjacent previous sampling time node, it is confirmed that the current value of the target branch presents a growing trend, and overcurrent occurs.
It should be noted that t and a are empirically valued according to the application scenario, for example, t is 2ms and a is 1.5.
In an embodiment of the present application, step S340 is further included.
Step S340: and when the difference current value is larger than the preset safety current difference value, confirming that the electronic load has overcurrent.
In this step, even if the slope of the correspondence between the differential current and the time does not satisfy the condition that the duration t seconds is greater than a, when the differential current value is greater than the preset safe current difference value, it is confirmed that the electronic load has an overcurrent, and the overcurrent judgment is prevented from being affected due to the fact that the sampling frequency of the collected reference current data and the target current data is not high enough.
As shown in fig. 4, in an embodiment of the present application, the "preset safe current difference" in step S340 is obtained by the following steps:
step S341: acquiring a rated current value of a MOSFET of a target branch;
step S342: and b times of the rated current value is taken as a preset safety current difference value, and the value range of b is 0.1 and 0.3.
In the step, the rated current value of the MOSFET of the target branch is obtained, and b times of the rated current value is taken as a preset safe current difference value so as to compare the differential current value with the preset safe current difference value, thereby confirming whether the electronic load has overcurrent or not.
It can be understood that b is empirically valued according to the application scenario, and the range of values is [0.1,0.3], for example, b is 0.1.
In addition, an embodiment of the present application discloses an electronic load, including: at least one processor; at least one memory for storing at least one program; the electronic load over-current protection method as described above is implemented when the at least one program is executed by the at least one processor.
According to the electronic load provided by the embodiment of the application, one MOSFET branch is used as a reference branch, the other MOSFET branches are used as target branches, the reference current data and a plurality of target current data are synchronously acquired in real time, whether the electronic load is over-current or not is confirmed according to the reference current data and the plurality of target current data, and when the electronic load is over-current, the electronic load is closed. Compared with the traditional electronic load, the electronic load provided by the embodiment of the application can be used for judging whether the electronic load is over-current or not directly according to the reference current data and the target current data corresponding to the MOSFET branch circuit, so that the electronic load is turned off in time, the power devices in the MOSFET branch circuit are prevented from being burnt, and the protection performance is good.
In addition, an embodiment of the present application discloses a computer readable storage medium in which a program executable by a processor is stored, where the program executable by the processor is used to implement the electronic load overcurrent protection method as described above.
According to the computer readable storage medium, one MOSFET branch is used as a reference branch, the other MOSFET branches are used as target branches, reference current data and a plurality of target current data are synchronously collected in real time, whether the electronic load is over-current or not is confirmed according to the reference current data and the target current data, and when the electronic load is over-current, the electronic load is closed. The computer readable storage medium of the embodiment of the application can be used for directly judging whether the electronic load is over-current or not according to the reference current data and the target current data corresponding to the MOSFET branch circuit, so that the electronic load is turned off in time, the power devices in the MOSFET branch circuit are prevented from being burnt, and the protection performance is good.
Those of ordinary skill in the art will appreciate that all or some of the steps, systems, and methods disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. Some or all of the physical components may be implemented as software executed by a processor, such as a central processing unit, digital signal processor, or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer storage media (or non-transitory media) and communication media (or transitory media). The term computer storage media includes both volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, as known to those skilled in the art. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can be accessed by a computer. Furthermore, as is well known to those of ordinary skill in the art, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media.
The embodiments of the present application have been described in detail with reference to the accompanying drawings, but the present application is not limited to the above embodiments, and various changes can be made within the knowledge of one of ordinary skill in the art without departing from the spirit of the present application.
Claims (6)
1. The electronic load overcurrent protection method is applied to an electronic load, and the electronic load comprises a plurality of MOSFET branches connected in parallel, and is characterized by comprising the following steps:
taking one MOSFET branch as a reference branch and the rest MOSFET branches as target branches;
synchronously acquiring reference current data and a plurality of target current data in real time, wherein the plurality of target current data are in one-to-one correspondence with a plurality of target branches, the reference current data comprise sampling time nodes and reference current values corresponding to the sampling time nodes, the reference current values are current values of the reference branches, the target current data comprise the sampling time nodes and target current values corresponding to the sampling time nodes, and the target current values are current values of the target branches;
and confirming whether the electronic load is over-current or not according to the reference current data and the target current data, and closing the electronic load when the electronic load is over-current.
2. The method of claim 1, wherein the electronic load is checked for an overcurrent by:
obtaining difference current data according to the reference current data and the target current data, wherein the difference current data comprises the sampling time node and the difference current value corresponding to the sampling time node, and the difference current value is an absolute value of a difference between the reference current value and the target current value corresponding to the sampling time node;
establishing a difference current time corresponding relation according to the difference current data;
and when the slope of the time corresponding relation of the difference current is longer than a for t seconds, confirming that the electronic load is over-current, wherein t is a positive number, and the value range of a is [1.5,3].
3. The electronic load over-current protection method of claim 2, further comprising: and when the difference current value is larger than a preset safety current difference value, confirming that the electronic load is over-current.
4. The method of claim 3, wherein the preset safe current difference is obtained by:
acquiring a rated current value of a MOSFET of the target branch;
and b times of the rated current value is taken as the preset safe current difference value, and the value range of b is 0.1, 1.
5. An electronic load, comprising:
at least one processor;
at least one memory for storing at least one program;
the electronic load over-current protection method according to any one of claims 1 to 4, when at least one of said programs is executed by at least one of said processors.
6. A computer readable storage medium, characterized in that a processor executable program is stored therein, which when executed by a processor is adapted to implement the electronic load overcurrent protection method according to any one of claims 1 to 4.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310642636.5A CN116865203B (en) | 2023-06-01 | 2023-06-01 | Electronic load overcurrent protection method, electronic load and computer readable storage medium |
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| CN202310642636.5A CN116865203B (en) | 2023-06-01 | 2023-06-01 | Electronic load overcurrent protection method, electronic load and computer readable storage medium |
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| CN116865203B CN116865203B (en) | 2024-05-07 |
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| CN116865203B (en) | 2024-05-07 |
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