CN116864416A - Monolithic semiconductor wafer etching device - Google Patents
Monolithic semiconductor wafer etching device Download PDFInfo
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- CN116864416A CN116864416A CN202310868494.4A CN202310868494A CN116864416A CN 116864416 A CN116864416 A CN 116864416A CN 202310868494 A CN202310868494 A CN 202310868494A CN 116864416 A CN116864416 A CN 116864416A
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- 238000005530 etching Methods 0.000 title claims abstract description 63
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000001514 detection method Methods 0.000 claims abstract description 39
- 238000001816 cooling Methods 0.000 claims description 44
- 239000000110 cooling liquid Substances 0.000 claims description 14
- 230000000694 effects Effects 0.000 abstract description 18
- 238000000034 method Methods 0.000 abstract description 14
- 235000012431 wafers Nutrition 0.000 description 67
- 239000002826 coolant Substances 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 9
- 238000007689 inspection Methods 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The application discloses a monolithic semiconductor wafer etching device, which comprises a cavity, an upper electrode plate, a lower electrode plate, an electrostatic carrying disc positioned between the upper electrode and the lower electrode, an air supply unit for supplying air into the cavity and a vacuumizing unit for vacuumizing, wherein the upper electrode plate is arranged on the upper electrode plate; the cavity is internally provided with an annular base platform surrounding the electrostatic carrying disc, the annular base platform is connected with an annular carrying platform through a plurality of first L-shaped brackets, an annular carrying plate is carried at the annular carrying platform, a plurality of circular grooves are formed in the carrying plate, and a detection wafer is fixedly arranged at each circular groove. According to the etching device, in the etching process, the microscope unit is used for collecting images of the detection wafer, and the detection wafer and the semiconductor wafer to be etched are in the same working environment, so that the etching effect of the semiconductor wafer being processed can be deduced through the etching effect of the detection wafer, and the etching effect of the semiconductor wafer can be detected in the etching process.
Description
Technical Field
The application relates to the technical field of semiconductor wafer production and processing, in particular to a single-chip semiconductor wafer etching device.
Background
Etching is a process of selectively removing a specific part of the surface of a semiconductor wafer in the manufacture of a semiconductor device, etching the wafer by an etching device, removing a part without photoresist coverage by taking patterned photoresist as a template on the basis of photoetching, and etching various structures on the wafer.
At present, in the field of semiconductor device manufacturing, dry etching is performed by using more etching processes, and the existing dry etching device usually detects etched semiconductor wafers through a microscope after the etching process is finished, but in the process of the etching process, the etching effect of the semiconductor wafers is difficult to know in time, corresponding measures cannot be taken according to the actual etching effect, and after the etching is finished, the phenomenon of excessive etching or poor etching is easy to occur, so that the quality of the semiconductor wafers is directly affected, and even resource waste is caused. Particularly, when the fault problem occurs in the etching equipment, if the fault problem cannot be found in time, the damage can be caused to the etching of the wafers in the batch, because the semiconductor wafers can sometimes undergo tens of etching operations in the processing process, once in a certain etching process, the degradation of the etching quality caused by the fact that the problem of the equipment is not found and maintained in time can influence the processing quality of the whole semiconductor wafer. Monitoring of the etching equipment is therefore of great importance in practice during the processing of semiconductor wafers.
Disclosure of Invention
The application aims to overcome the defects of the prior art and provides a single-chip semiconductor wafer etching device.
In order to achieve the above object, the present application provides the following technical solutions: the semiconductor wafer etching device comprises a cavity, an upper electrode plate, a lower electrode plate, an electrostatic carrying disc positioned between the upper electrode plate and the lower electrode plate, an air supply unit for supplying air into the cavity and a vacuumizing unit for vacuumizing; the electrostatic chuck is characterized in that an annular base table surrounding the electrostatic chuck is further arranged in the chamber, the annular base table is connected with an annular carrying table through a plurality of first L-shaped brackets, an annular carrying plate is carried at the annular carrying table, a plurality of circular grooves are formed in the carrying plate, and a detection wafer is fixedly arranged at each circular groove.
Further, the electrostatic chuck is used for carrying a semiconductor wafer to be etched.
Further, one of the upper electrode plate and the lower electrode plate is connected with a radio frequency power supply, and the other electrode plate is grounded.
Further, the gas supply unit comprises a gas inlet pipe and a gas dispersion plate connected with the gas inlet pipe, wherein the gas dispersion plate is provided with an inner cavity and a plurality of spray holes.
Thereby realizing better air intake, and air intake is more uniform through a plurality of spray holes.
Further, the device comprises a driving unit, a shielding unit, a cooling unit and a collecting unit, wherein the shielding unit comprises a circular rotating plate, a circular outer limiting plate, a circular inner limiting plate and a plurality of second L-shaped brackets which are connected with the outer limiting plate and the annular base, the outer limiting plate is provided with a circular limiting groove which is inserted by the rotating plate, the inner limiting plate is positioned below the rotating plate, the inner limiting plate and the outer limiting plate are connected by a plurality of U-shaped connecting frames, a circular gap is formed between the outer limiting plate and the inner limiting plate, a circle of first teeth which are positioned at the circular gap is formed on the lower surface of the rotating plate, a circular through hole is formed at the rotating plate, the collecting unit comprises a circular inner circumferential plate which is fixed at the rotating plate, a circular outer circumferential plate which is fixed at the rotating plate, a connecting seat which is fixedly connected between the inner circumferential plate and the outer circumferential plate, a sliding plate which is positioned between the inner circumferential plate and the outer circumferential plate, and a sliding seat which is arranged at the sliding plate, and an arc-shaped sliding seat which is arranged on the inner circumferential plate are arranged on the inner side of the microscope, and the sliding seat which is connected with the inner circumferential plate, and the arc-shaped sliding seat which is embedded between the sliding seat is arranged on the two sides of the sliding seat; the cooling unit comprises a circular sliding rail fixed on the circular base, a rotating ring arranged on the circular sliding rail, a mounting plate fixedly connected with the rotating ring, a cooling liquid container fixed at the mounting plate and a cooling plate connected with the cooling liquid container through a plurality of springs, wherein the cooling plate can be abutted against the circular base, a circle of second teeth are arranged at the top end of the rotating ring, a cooling channel is arranged in the cooling plate, two ends of the cooling channel are respectively connected with the cooling liquid container through a hose, and a cooling liquid pump is arranged at one hose; the driving unit comprises a motor and a driving gear driven by the motor, and the driving gear is meshed with the first teeth and the second teeth.
The microscope unit of the acquisition unit can acquire the detection wafer in use, so that the etching effect of the detection wafer can be observed, and the etching effect of the semiconductor wafer under the same environment can be deduced; the loading plate is cooled by the cooling unit, and then the detection wafer in use is cooled.
Further, the microscope is an electron microscope.
Further, the volume of the cooling liquid container is larger than 20 times of the volume of the cooling channel.
So that a sufficient amount of coolant is present in the coolant container for cooling the cooling plate.
In some embodiments, the coolant reservoir has an active heat sink unit, such as a heat sink fan, at the coolant reservoir.
Thereby increasing the effect of active heat dissipation of the coolant container.
Further, the rotating ring is provided with a circular sliding groove matched with the circular sliding rail.
So that the rotating ring can rotate along the circular slide rail.
Further, the driving gear can drive the rotating plate and the rotating ring to synchronously rotate.
So that the etching of a certain inspection wafer and the cooling of a certain inspection wafer can be kept in synchronous operation.
Further, the motor is arranged at the motor base, and the motor base is arranged at the annular base.
Further, an upper surrounding cylinder surrounding the circular through hole is fixed on the upper surface of the rotating plate, and a lower surrounding cylinder surrounding the circular through hole is fixed on the lower surface of the rotating plate.
Thereby providing lateral protection to the inspection wafer being used and limiting the acquisition viewing angle of the microscope unit.
Further, the outer limiting plate comprises a circular upper plate body, a circular lower plate body and a circular surrounding plate, the circular limiting groove is formed among the upper plate body, the lower plate body and the surrounding plate, and the lower plate body is connected with the inner limiting plate through a plurality of U-shaped connecting frames.
Thereby realizing better limit to the rotating plate and enabling the rotating plate to rotate in the annular limit groove.
Further, the annular carrying platform is provided with a plurality of limiting units, each limiting unit comprises two arc limiting plates, one arc limiting plate is abutted with the inner circumference of the loading plate, and the other arc limiting plate is abutted with the outer circumference of the loading plate.
Thereby limiting and fixing the loading plate through the limiting unit.
Preferably, the side of each arc-shaped limiting plate, which is close to the loading plate, is provided with an anti-slip coating.
So that the loading plate cannot relatively displace relative to the arc-shaped limiting plate.
Preferably, in other embodiments, two arcuate limiting plates of the limiting unit clamp the loading plate.
Thereby the spacing unit realizes the better fixed to loading board.
Further, the lower surface of the circular carrying platform is provided with a circular groove, and the cooling plate is positioned in the circular groove and abuts against the top end of the circular groove.
So that the cooling plate is closer to the loading plate and the cooling effect is better.
Further, the sliding plate is provided with a first hinging seat, the connecting seat is provided with a second hinging seat, one end of the electric push rod is hinged with the first hinging seat, and the other end of the electric push rod is hinged with the second hinging seat.
Further, the plurality of first L-shaped brackets are distributed in an annular equidistant manner; the plurality of second L-shaped brackets are distributed in an annular equidistant manner; the plurality of circular grooves are distributed in an annular equidistant mode.
Thereby improving the stability of the overall structure.
Further, the number of the first L-shaped brackets, the second L-shaped brackets and the U-shaped connecting frames is 6.
Further, the chamber has a viewing window.
Thereby facilitating the observation of the interior of the chamber.
Further, the electrostatic carrier tray is used for a carrier tray cooling unit for cooling the semiconductor wafer.
Thereby realizing the cooling effect on the semiconductor wafer.
Further, the tray cooling unit comprises a coolant storage container, a cooling channel positioned in the electrostatic tray, one end of the cooling channel is connected with the coolant storage container through a first connecting pipe, the other end of the cooling channel is connected with the coolant storage container through a second connecting pipe, and a circulating pump is arranged at the first connecting pipe.
The beneficial effects are that:
1) According to the etching device, in the etching process, the microscope unit is used for collecting images of the detection wafer, and the detection wafer and the semiconductor wafer to be etched are in the same working environment, so that the etching effect of the semiconductor wafer being processed can be deduced through the etching effect of the detection wafer, the etching effect of the semiconductor wafer can be detected in the etching process, and the number of defective products is effectively reduced.
2) The number of the detection wafers is multiple, only one detection wafer is used for each detection, and the rest detection wafers which are not used are shielded and protected. Thus, a load plate has a test wafer that enables testing of the etching apparatus over a longer period of time.
3) The detection wafer can realize synchronous cooling of the detection wafer in use no matter which detection wafer is used for detection when the detection wafer is used for detection, so that the detection wafer in use obtains the working environment as much as possible as the semiconductor wafer etched at the electrostatic carrier plate, and better detection and monitoring of the etching device are realized.
Drawings
FIG. 1 is a schematic diagram of the overall structure of an etching apparatus;
FIG. 2 is a schematic view of the internal components of the chamber from a first perspective;
FIG. 3 is an enlarged view of area A;
FIG. 4 is a schematic view of the internal components of the chamber from a second perspective;
FIG. 5 is an enlarged view of region B;
FIG. 6 is a schematic view of the interior components of the chamber from a third perspective;
FIG. 7 is a fourth schematic view of the interior components of the chamber;
FIG. 8 is a fifth schematic view of the interior components of the chamber;
reference numerals illustrate:
a chamber 1; 1.1, an upper electrode plate; 1.2 lower electrode plate; 1.3 electrostatic chuck; 1.3.1 semiconductor wafer; 1.4 air inlet pipe; 1.5 gas dispersion trays; 1.6, vacuumizing unit;
2, an annular base station; 2.1 a first L-shaped bracket;
3, a circular ring-shaped carrying platform; 3.1 loading plate; 3.1.1 inspecting the wafer; 3.2 arc limiting plates;
4.1 rotating the plate; 4.1.1 first teeth; 4.2 outer limiting plates; 4.3 inner limiting plates; 4.4 a second L-shaped bracket; 4.5U-shaped connecting frames; 4.6 upper surrounding cylinder; 4.7 lower enclosure;
5.1 inner circumferential plate; 5.2 outer circumferential plates; 5.3 connecting seats; 5.4 sliding plates; 5.5 microscope units; 5.6 arc chute; 5.7 electric push rod;
6.1, a circular slide rail; 6.2 rotating the ring; 6.2.1 second teeth; 6.3 mounting plates; 6.4 a cooling liquid container;
6.5 cooling plates; 6.6 hose; 6.7 a coolant pump;
7.1 motors; 7.2 drive gears; 7.3 motor cabinet.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The application provides a single-chip semiconductor wafer etching device as shown in figures 1-8, which comprises a chamber 1, an upper electrode plate 1.1, a lower electrode plate 1.2, an electrostatic carrying disc 1.3 positioned between the upper electrode plate and the lower electrode plate, a gas supply unit for supplying gas into the chamber 1 and a vacuumizing unit 1.6 for vacuumizing; the electrostatic chuck is characterized in that an annular base 2 surrounding the electrostatic chuck 1.3 is further arranged in the chamber 1, the annular base 2 is connected with an annular carrying platform 3 through a plurality of first L-shaped supports 2.1, an annular carrying plate 3.1 is carried at the annular carrying platform 3, a plurality of circular grooves are formed in the carrying plate 3.1, and a detection wafer 3.1.1 is fixedly arranged at each circular groove.
The device comprises a driving unit, a shielding unit, a cooling unit and a collecting unit, wherein the shielding unit comprises a circular rotating plate 4.1, a circular outer limiting plate 4.2, a circular inner limiting plate 4.3 and a plurality of second L-shaped brackets 4.4 connected with the outer limiting plate 4.2 and the annular base 2, the circular limiting plate 4.2 is provided with a circular limiting groove inserted by the rotating plate 4.1, the inner limiting plate 4.3 is positioned below the rotating plate 4.1, the inner limiting plate 4.3 is connected with the outer limiting plate 4.2 through a plurality of U-shaped connecting frames 4.5, a circular gap is formed between the outer limiting plate 4.2 and the inner limiting plate 4.3, a circle of first teeth 4.1.1 positioned at the circular gap is formed on the lower surface of the rotating plate 4.1, the collecting unit comprises a circular limiting groove fixed at the position of the rotating plate 4.1, the inner peripheral plate 4.1 is fixedly provided with an arc-shaped sliding groove, the inner peripheral plate 5.5.5 is fixedly arranged at the inner peripheral plate 1, the inner peripheral plate 5.5.5 is fixedly connected with the sliding groove 5.5.5, and the outer peripheral plate 5.5 is fixedly arranged at the inner peripheral plate 2 and the outer peripheral plate 5.5.5, and the inner peripheral plate 5.5 is fixedly connected with the sliding seat 2, and the inner peripheral plate 5.5 is fixedly connected with the sliding plate 5.5.5, and the sliding plate 5 is fixedly connected with the sliding plate 5.5, and the sliding plate 2, and is fixedly connected with the sliding plate 5.5, and is provided with the sliding plate 5; the cooling unit comprises a circular sliding rail 6.1 fixed on the circular base 2, a rotating ring 6.2 arranged on the circular sliding rail 6.1, a mounting plate 6.3 fixedly connected with the rotating ring 6.2, a cooling liquid container 6.4 fixed at the mounting plate 6.3 and a cooling plate 6.5 connected with the cooling liquid container 6.4 through a plurality of springs, the cooling plate 6.5 can be abutted against the circular base 3, a circle of second teeth 6.2.1 are arranged at the top end of the rotating ring 6.2, a cooling channel is arranged in the cooling plate 6.5, two ends of the cooling channel are respectively connected with the cooling liquid container 6.4 through a hose 6.6, and a cooling liquid pump 6.7 is arranged at one hose 6.6; the drive unit comprises a motor 7.1 and a drive gear 7.2 driven by the motor, the drive gear 7.2 being in mesh with both the first tooth 4.1.1 and the second tooth 6.2.1.
The motor 7.1 is arranged at the motor seat 7.3, and the motor seat 7.3 is arranged at the annular base 2; an upper surrounding cylinder 4.6 surrounding the circular through hole is fixed on the upper surface of the rotating plate 4.1, and a lower surrounding cylinder 4.7 surrounding the circular through hole is fixed on the lower surface of the rotating plate 4.1; the circular-ring-shaped carrying platform 3 is provided with a plurality of limiting units, each limiting unit comprises two arc limiting plates 3.2, one arc limiting plate is abutted with the inner circumference of the loading plate 3.1, and the other arc limiting plate is abutted with the outer circumference of the loading plate 3.1; the lower surface of the annular carrier 3 is provided with an annular groove, and the cooling plate 6.5 is positioned in the annular groove and abuts against the top end of the annular groove; the sliding plate 5.4 is provided with a first hinging seat, the connecting seat 5.3 is provided with a second hinging seat, one end of the electric push rod 5.7 is hinged with the first hinging seat, and the other end is hinged with the second hinging seat; the plurality of first L-shaped brackets 2.1 are distributed in an annular equidistant manner; the plurality of second L-shaped brackets 4.4 are distributed in an annular equidistant manner; the plurality of circular grooves are distributed in an annular equidistant manner; the number of the first L-shaped brackets 2.1, the second L-shaped brackets 4.4 and the U-shaped connecting frames 4.5 is 6; the chamber 1 has a viewing window; the electrostatic carrier plate 1.3 is used for a carrier plate cooling unit for cooling the semiconductor wafer 1.3.1.
Working principle: according to the etching device, in the etching process, the microscope unit is used for collecting images of the detection wafer, and the detection wafer and the semiconductor wafer to be etched are in the same working environment, so that the etching effect of the semiconductor wafer being processed can be deduced through the etching effect of the detection wafer, the etching effect of the semiconductor wafer can be detected in the etching process, and the number of defective products is effectively reduced.
Specifically, in the etching process, gas used for etching is introduced from the gas inlet pipe, dispersed through the gas dispersion disc and sprayed out through the spray holes, and plasma is generated between the upper electrode plate and the lower electrode plate and bombards one of the detection wafers and the semiconductor wafer to be etched (other detection wafers are shielded by the shielding unit, so that the other detection wafers cannot be etched). Only one inspection wafer is used for inspection at each inspection, the inspection may be performed once every interval of time, and etching of the inspection wafer need not be completely synchronized with etching of the wafer to be etched.
Through the synchronous rotation of drive gear drive pivoted board and swivel becket, can rotate one of them detection wafer's top with circular through-hole, at every detection cycle, can use one of them to detect, a plurality of detection wafers can be used clockwise or anticlockwise in proper order. After etching for a period of time, the movable end of the electric push rod is utilized to push the sliding plate to move to the upper part of the circular through hole, the image acquisition is carried out on the detection wafer through the microscope unit, and the etching effect of the detection wafer can be obtained through the acquired image, so that according to the etching condition of the detection wafer, whether etching equipment is in normal operation or not can be monitored, and because the photoetching patterns of the detection wafer are known and can be designed in a standardized manner, the etching effect can be monitored by comparing the images before and after the etching of the detection wafer, the condition of the etching equipment is monitored, and the normal operation state of the etching equipment is ensured.
While the application has been shown and described with respect to the preferred embodiments, it will be understood by those skilled in the art that various changes and modifications may be made therein without departing from the scope of the application as defined in the following claims.
Claims (10)
1. The single-chip semiconductor wafer etching device is characterized by comprising a cavity, an upper electrode plate, a lower electrode plate, an electrostatic carrying disc positioned between the upper electrode plate and the lower electrode plate, an air supply unit for supplying air into the cavity and a vacuumizing unit for vacuumizing; the electrostatic chuck is characterized in that an annular base table surrounding the electrostatic chuck is further arranged in the chamber, the annular base table is connected with an annular carrying table through a plurality of first L-shaped brackets, an annular carrying plate is carried at the annular carrying table, a plurality of circular grooves are formed in the carrying plate, and a detection wafer is fixedly arranged at each circular groove.
2. The single-chip semiconductor wafer etching device according to claim 1, further comprising a driving unit, a shielding unit, a cooling unit and a collecting unit, wherein the shielding unit comprises a circular rotating plate, a circular outer limiting plate, a circular inner limiting plate and a plurality of second L-shaped brackets connected with the outer limiting plate and the annular base, the circular outer limiting plate is provided with a circular limiting groove inserted by the rotating plate, the inner limiting plate is positioned below the rotating plate, the inner limiting plate and the outer limiting plate are connected by a plurality of U-shaped connecting frames, a circular gap is formed between the outer limiting plate and the inner limiting plate, the lower surface of the rotating plate is provided with a circle of first teeth positioned at the circular gap, the rotating plate is provided with a circular through hole, the collecting unit comprises a circular inner circumferential plate fixed at the rotating plate, a circular outer circumferential plate fixed at the rotating plate, a connecting seat fixedly connected between the inner circumferential plate and the outer circumferential plate, a sliding seat positioned between the inner circumferential plate and the outer circumferential plate and an inner circumferential plate and an arc-shaped sliding seat arranged between the sliding seat and the sliding seat arranged on the sliding plate and the sliding seat arranged on the two sides of the sliding plate; the cooling unit comprises a circular sliding rail fixed on the circular base, a rotating ring arranged on the circular sliding rail, a mounting plate fixedly connected with the rotating ring, a cooling liquid container fixed at the mounting plate and a cooling plate connected with the cooling liquid container through a plurality of springs, wherein the cooling plate can be abutted against the circular base, a circle of second teeth are arranged at the top end of the rotating ring, a cooling channel is arranged in the cooling plate, two ends of the cooling channel are respectively connected with the cooling liquid container through a hose, and a cooling liquid pump is arranged at one hose; the driving unit comprises a motor and a driving gear driven by the motor, and the driving gear is meshed with the first teeth and the second teeth.
3. The apparatus of claim 2, wherein the motor is mounted at a motor mount, and the motor mount is mounted at an annular base.
4. The apparatus according to claim 3, wherein an upper surrounding cylinder surrounding the circular through hole is fixed to an upper surface of the rotation plate, and a lower surrounding cylinder surrounding the circular through hole is fixed to a lower surface of the rotation plate.
5. The apparatus of claim 2, wherein the circular stage has a plurality of limiting units, each limiting unit including two arc limiting plates, one of the arc limiting plates being in abutment with an inner circumference of the loading plate, and the other arc limiting plate being in abutment with an outer circumference of the loading plate.
6. The apparatus of claim 2, wherein the lower surface of the circular stage has a circular groove, and the cooling plate is positioned in the circular groove and abuts against the top end of the circular groove.
7. The apparatus according to claim 2, wherein the sliding plate has a first hinge seat, the connecting seat has a second hinge seat, and one end of the electric push rod is hinged to the first hinge seat, and the other end is hinged to the second hinge seat.
8. The apparatus of claim 2, wherein the plurality of first L-shaped brackets are distributed at equal intervals in a ring shape; the plurality of second L-shaped brackets are distributed in an annular equidistant manner; the plurality of circular grooves are distributed in an annular equidistant mode.
9. The apparatus of claim 8, wherein the number of the first L-shaped brackets, the second L-shaped brackets, and the U-shaped connection frames is 6.
10. The apparatus of claim 1, wherein the chamber has a viewing window; the electrostatic carrier tray is used for a carrier tray cooling unit for cooling the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310868494.4A CN116864416B (en) | 2023-07-14 | 2023-07-14 | Monolithic semiconductor wafer etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310868494.4A CN116864416B (en) | 2023-07-14 | 2023-07-14 | Monolithic semiconductor wafer etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116864416A true CN116864416A (en) | 2023-10-10 |
| CN116864416B CN116864416B (en) | 2024-05-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202310868494.4A Active CN116864416B (en) | 2023-07-14 | 2023-07-14 | Monolithic semiconductor wafer etching device |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040033631A1 (en) * | 2002-08-13 | 2004-02-19 | Clark Fred Y. | Methods for inspection sample preparation |
| KR20050120877A (en) * | 2004-06-21 | 2005-12-26 | 삼성전자주식회사 | Etching apparatus for manufacturing semiconductor |
| US20180151335A1 (en) * | 2016-11-29 | 2018-05-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for controlling exposure region in bevel etching process for semiconductor fabrication |
| CN212485291U (en) * | 2020-04-09 | 2021-02-05 | 长江存储科技有限责任公司 | Wafer bearing device and etching equipment |
| CN114883214A (en) * | 2021-04-16 | 2022-08-09 | 台湾积体电路制造股份有限公司 | Apparatus, system, and method for real-time compensation control of an etch process |
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2023
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040033631A1 (en) * | 2002-08-13 | 2004-02-19 | Clark Fred Y. | Methods for inspection sample preparation |
| KR20050120877A (en) * | 2004-06-21 | 2005-12-26 | 삼성전자주식회사 | Etching apparatus for manufacturing semiconductor |
| US20180151335A1 (en) * | 2016-11-29 | 2018-05-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for controlling exposure region in bevel etching process for semiconductor fabrication |
| CN212485291U (en) * | 2020-04-09 | 2021-02-05 | 长江存储科技有限责任公司 | Wafer bearing device and etching equipment |
| CN114883214A (en) * | 2021-04-16 | 2022-08-09 | 台湾积体电路制造股份有限公司 | Apparatus, system, and method for real-time compensation control of an etch process |
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