CN116845515B - High-power mismatch resistance method applied to P wave band - Google Patents
High-power mismatch resistance method applied to P wave band Download PDFInfo
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- CN116845515B CN116845515B CN202311085860.5A CN202311085860A CN116845515B CN 116845515 B CN116845515 B CN 116845515B CN 202311085860 A CN202311085860 A CN 202311085860A CN 116845515 B CN116845515 B CN 116845515B
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000003466 welding Methods 0.000 claims abstract description 44
- 238000010521 absorption reaction Methods 0.000 claims abstract description 42
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 238000012545 processing Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 238000005476 soldering Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 230000007547 defect Effects 0.000 claims description 4
- 230000003749 cleanliness Effects 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 238000001556 precipitation Methods 0.000 claims description 3
- 239000002893 slag Substances 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000003321 amplification Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000000465 moulding Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/24—Terminating devices
- H01P1/26—Dissipative terminations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
Abstract
The application belongs to the technical field of power mismatch resistance methods, and particularly relates to a method applied to P-band high-power mismatch resistance. And finally, welding the assembled radio frequency cable to the PCB, sintering the power absorption load to the carrier plate, and welding the lead wire of the power absorption load to the PCB. The power absorption load and the radio frequency cable are assembled according to the PCB assembly mode, so that the P-band radio frequency signal is absorbed, the P-band high-power mismatch resistance is realized, and the power amplifier tube is not damaged when the standing wave protection function and the total reflection of output power are avoided.
Description
Technical Field
The application belongs to the technical field of power mismatch resistance methods, and particularly relates to a high-power mismatch resistance method applied to a P-band.
Background
In a circuit, a power mismatch refers to an impedance mismatch of the load and the source, resulting in the generation of reflected power. In the event of a power mismatch, power cannot be completely transferred from the source into the load and some of the energy is reflected into the source, negatively affecting the circuit.
The power mismatch may result in reflected power generation, thereby affecting signal transmission in the circuit. The reflected signal may interfere with the original signal, resulting in signal attenuation, echo generation, or interference. In addition, power mismatch may also lead to reduced stability of the circuit, such that performance of the circuit is affected.
The frequency range of the P-band radio frequency signal is 300MHz-1000MHz, the quality of the power amplification tube used in the radio frequency microwave field at present is LDMOS and GNA respectively, the output impedance matching modes of the P-band amplification tube all adopt a transmission line transformer to finish impedance transformation, the transmission line transformer matching mode has the advantages of wide working frequency band and the disadvantage of output standing wave difference.
In the GNA amplifying tube with 600W in the product test, when the output power is 30W, the mismatch resistance test is carried out, when the standing wave ratio of the mismatch load is more than 3, after the continuous working time is 3S, the output port of the amplifying tube is burnt out, the reason that the output power of the amplifying tube is completely returned to the output port of the amplifying tube is that the output port power of the amplifying tube is gradually accumulated to cause the burning out.
The current P-band high-power mismatch resistance method is that a coupler is added at a signal output end to detect a reflected signal of output power, when the standing wave ratio of the reflected signal is more than 3, a power supply of a power tube is disconnected through a logic control circuit, so that the power tube is protected from being damaged.
Therefore, there is a need to develop a new method for P-band high-power mismatch resistance to solve the technical problem of P-band high-power mismatch.
Disclosure of Invention
The application aims to provide a high-power mismatch resistance method applied to a P wave band, which is used for solving the technical problem of high-power mismatch of the P wave band.
In order to solve the technical problems, the application adopts the following technical scheme:
the high-power mismatch resistance method applied to the P wave band comprises the following steps:
s1: selecting a power absorption load;
s2: selecting a radio frequency cable;
s3: processing the radio frequency cable;
s4: performing size processing on the carrier plate structure according to the power absorption load and the radio frequency cable;
s5: performing size processing treatment on the PCB according to the power absorption load and the radio frequency cable;
s6: the radio frequency cable and the power filter absorption load are molded and assembled;
s7: welding the processed radio frequency cable on a PCB;
s8: sintering the power absorption load onto the carrier plate, and welding leads of the power absorption load onto the PCB plate.
Preferably, the power absorption load is an AIN ceramic substrate with the working frequency of DC-1000MHz, the bearing power continuous wave of 100W and the nominal impedance value of 50Ω, and the impedance value of the radio frequency cable is 50Ω.
Preferably, in step S3, the following specific steps are included:
s30: straightening the radio frequency cable;
s31: cutting the radio frequency cable;
s32: peeling the cut radio frequency cable;
s33: and (5) tinning the peeled radio frequency cable.
Preferably, in step S4, the length of the external dimension of the carrier plate after processing is 40mm, and the width thereof is 30mm.
Preferably, the step S5 includes the following specific steps:
s50: selecting a Rogers4350B plate as a substrate of the PCB;
s51: selecting a printed board with the thickness delta of 0.508 mm;
s52: carrying out gold precipitation treatment on the front and back surfaces of the PCB;
s53: and metallizing the through holes on the PCB.
Preferably, in step S5, the length of the external dimension of the processed PCB is 38mm, the width is 28mm, and the width of the strip line on the PCB is 1.2mm.
Preferably, the cleanliness of the PCB pads is checked before the assembly of step S6.
Preferably, in step S7, the radio frequency cable is soldered to the PCB board by soldering iron and solder.
Preferably, in the welding process of step S7, the welding temperature is 350 ℃ and the welding time is 3S.
Preferably, after the welding in step S8 is completed, the method further comprises the following specific steps:
s80: checking whether the welding point has a welding defect of cold joint, welding slag inclusion or welding air hole;
s81: and (3) cleaning and decontaminating the welded PCB with the board washing water.
The beneficial effects of the application include:
the method for resisting mismatch in high power of P wave band provided by the application comprises the steps of selecting a proper power absorption load according to the working frequency/power of a product, selecting a 50Ω radio frequency cable according to the loss of a P wave band radio frequency signal, processing the radio frequency cable, processing a PCB and a carrier plate, and molding and assembling the radio frequency cable and the power absorption load. And finally, welding the assembled radio frequency cable to the PCB, sintering the power absorption load to the carrier plate, and welding the lead wire of the power absorption load to the PCB. The power absorption load and the radio frequency cable are assembled according to the PCB assembly mode, so that the P-band radio frequency signal is absorbed, the high-power mismatch resistance performance of the P-band is improved, and the power amplifier tube cannot be damaged when the standing wave protection function and the total reflection of output power are avoided.
Drawings
Fig. 1 is a flow chart of the method of the present application applied to P-band high power mismatch resistance.
Fig. 2 is a specific flowchart in step S3 of the method of the present application for P-band high-power mismatch resistance.
Fig. 3 is a specific flowchart in step S5 of the method of the present application for P-band high-power mismatch resistance.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present application.
The present application will present various aspects, embodiments, or features about a system that may include a plurality of devices, components, modules, etc. It is to be understood and appreciated that the various systems may include additional devices, components, modules, etc. and/or may not include all of the devices, components, modules etc. discussed in connection with the figures. Furthermore, combinations of these schemes may also be used.
In addition, in the embodiments of the present application, words such as "exemplary," "for example," and the like are used to indicate an example, instance, or illustration. Any embodiment or design described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, the term use of an example is intended to present concepts in a concrete fashion.
In the embodiment of the present application, "information", "signal", "message", "channel", and "signaling" may be used in a mixed manner, and it should be noted that the meaning of the expression is consistent when the distinction is not emphasized. "of", "corresponding" and "corresponding" are sometimes used in combination, and it should be noted that the meaning of the expression is consistent when the distinction is not emphasized.
The application is further described in detail below with reference to fig. 1 to 3:
referring to fig. 1, the method for P-band high-power mismatch resistance comprises the following steps:
s1: selecting a power absorption load;
s2: selecting a radio frequency cable;
s3: processing the radio frequency cable;
s4: performing size processing on the carrier plate structure according to the power absorption load and the radio frequency cable;
s5: performing size processing treatment on the PCB according to the power absorption load and the radio frequency cable;
s6: the radio frequency cable and the power filter absorption load are molded and assembled;
s7: welding the processed radio frequency cable on a PCB;
s8: sintering the power absorption load onto the carrier plate, and welding leads of the power absorption load onto the PCB plate.
Firstly, selecting a proper power absorption load according to the working frequency/power of a product, selecting a radio frequency cable according to the loss of a P-band radio frequency signal, then processing the radio frequency cable, processing a PCB and a carrier plate, and then forming and assembling the radio frequency cable and the power absorption load. And finally, welding the assembled radio frequency cable to the PCB, sintering the power absorption load to the carrier plate, and welding the lead wire of the power absorption load to the PCB. The power absorption load and the radio frequency cable are assembled according to the PCB assembly mode, so that the P-band radio frequency signal is absorbed, the P-band high-power mismatch resistance is realized, and the power amplifier tube is not damaged when the standing wave protection function and the total reflection of output power are avoided.
In the scheme, the power absorption load is an AIN ceramic substrate with the working frequency of DC-1000MHz, the bearing power continuous wave of 100W and the nominal impedance value of 50Ω, and the impedance value of the radio frequency cable is 50Ω.
The impedance values of the radio frequency cables are 12.5 omega, 25 omega, 50 omega and 75 omega respectively, and the radio frequency cable of 50 omega is selected, so that the loss of the radio frequency cable of 50 omega to the P-band radio frequency signal is small, and the reflected signal can be effectively transmitted to a power absorption load.
The power absorption load of the AIN ceramic substrate is selected because the AIN ceramic substrate has high heat conduction performance and a nominal impedance value of 50Ω, and can convert a radio frequency signal in a P wave band into heat energy which can be rapidly transmitted to a radiator through the ceramic substrate, thereby realizing the absorption of the radio frequency signal and the mismatch resistance of the power in the P wave band.
The step S3 comprises the following specific steps:
s30: straightening the radio frequency cable;
s31: cutting the radio frequency cable;
s32: peeling the cut radio frequency cable;
s33: and (5) tinning the peeled radio frequency cable.
In the scheme, the copper core is arranged inside the radio frequency cable, the texture is softer, the copper core is in a bending state before processing, the radio frequency cable is required to be cut after being straightened before being processed, 2 radio frequency cables with the length of 60mm are cut according to requirements, then the cut radio frequency cables are peeled, the characteristics of the peeled radio frequency cables are that the length of a wire core of an end is 2mm, the length of a white medium in the middle of the radio frequency cables is 2mm, the length of a shielding layer is 3mm, the cut radio frequency cables are smooth and have no burrs, and finally the cut radio frequency cables are tin-plated.
Since the range of the P-band radio frequency signal is 300MHz-1000MHz, the beam is typically 300 according to the calculated relationship between the frequency and the wavelength (wavelength=beam/frequency), the wavelength of 300MHz is 100mm, the wavelength of 1000MHz is 30mm, and the median value is 60mm, so the processing length of the radio frequency cable is 60mm. If cables of other lengths are selected, the radio frequency signals of the P wave band cannot be effectively transmitted.
In the step S4, the length of the external dimension of the carrier plate after processing is 40mm, and the width is 30mm. The size of the carrier plate is designed according to the requirements of the radio frequency cable and absorption load assembly structure, bearing power and impedance matching.
The step S5 comprises the following specific steps:
s50: selecting a Rogers4350B plate as a substrate of the PCB;
s51: selecting a printed board with the thickness delta of 0.508 mm;
s52: carrying out gold precipitation treatment on the front and back surfaces of the PCB;
s53: and metallizing the through holes on the PCB.
In the scheme, the Rogers4350B plate is selected as the substrate of the PCB, the purpose of the Rogers4350B is to have a dielectric constant of 3.5 and a higher thermal expansion coefficient and thermal conductivity coefficient, so that heat is far away from the transistor, and further the power amplifier obtains high amplification performance, and the purpose of high-power amplification is realized.
Because copper on the PCB is mainly red copper, copper welding points are easily oxidized in air, poor tin eating or poor contact is formed, and the performance of the PCB is reduced, so that the copper welding points are required to be subjected to surface treatment, gold deposition is carried out on the copper welding points, and the gold can effectively isolate copper metal and air so as to prevent copper oxidation.
The metallization of the vias in the PCB board metallizes the resin and glass fibers of the non-conductive portions on the walls of the holes to facilitate the subsequent electroplating process and to provide sufficient conductive and protective metal Kong Bi.
In step S5, the length of the external dimension of the processed PCB is 38mm, the width is 28mm, and the width of the strip line on the PCB is 1.2mm. The cleanliness of the PCB pads is checked before assembly in step S6, avoiding affecting the soldering quality. In step S7, the radio frequency cable is soldered to the PCB board by soldering iron and solder. In the welding process of step S7, the welding temperature is 350 ℃ and the welding time is 3S.
After the welding in the step S8 is completed, the method further comprises the following specific steps:
s80: checking whether the welding point has a welding defect of cold joint, welding slag inclusion or welding air hole;
s81: and (3) cleaning and decontaminating the welded PCB with the board washing water.
The defect of the welding point is to check the welding quality so as to ensure the normal operation of the PCB. The cleaning work after welding is to remove corrosive soldering flux residues and redundant soldering paste, ensure good surface resistance, prevent PCB failure caused by leakage, and further prolong the service life of the PCB.
In summary, according to the method for P-band high-power mismatch resistance provided by the application, firstly, an AIN ceramic substrate and a power absorption load with a nominal impedance value of 50Ω are selected according to the working frequency/power of a product, a 50Ω radio frequency cable is selected according to the loss of a P-band radio frequency signal, then the radio frequency cable is processed, the PCB and the carrier are processed, and then the radio frequency cable and the power absorption load are molded and assembled.
And finally, welding the assembled radio frequency cable to the PCB, sintering the power absorption load to the carrier plate, and welding the lead wire of the power absorption load to the PCB. The power absorption load and the radio frequency cable are assembled according to the PCB assembly mode, so that the P-band radio frequency signal is absorbed, the high-power mismatch resistance performance of the P-band is improved, and the power amplifier tube cannot be damaged when the standing wave protection function and the total reflection of output power are avoided.
The above examples merely illustrate specific embodiments of the application, which are described in more detail and are not to be construed as limiting the scope of the application. It should be noted that it is possible for a person skilled in the art to make several variants and modifications without departing from the technical idea of the application, which fall within the scope of protection of the application.
Claims (9)
1. The high-power mismatch resistance method applied to the P wave band is characterized by comprising the following steps of:
s1: selecting a power absorption load;
s2: selecting a radio frequency cable;
s3: processing the radio frequency cable;
s4: performing size processing on the carrier plate structure according to the power absorption load and the radio frequency cable;
s5: performing size processing treatment on the PCB according to the power absorption load and the radio frequency cable;
s6: the radio frequency cable and the power filter absorption load are molded and assembled;
s7: welding the processed radio frequency cable on a PCB;
s8: sintering the power absorption load onto a carrier plate, and welding leads of the power absorption load onto a PCB;
the step S3 includes the following specific steps:
s30: straightening the radio frequency cable;
s31: cutting the radio frequency cable;
s32: peeling the cut radio frequency cable;
s33: and (5) tinning the peeled radio frequency cable.
2. The method for P-band high power mismatch resistance according to claim 1, wherein said power absorbing load is selected from AIN ceramic substrates with an operating frequency of DC-1000MHz, a power standing continuous wave of 100W, a nominal impedance of 50Ω, and said radio frequency cable has an impedance of 50Ω.
3. The method for P-band high-power mismatch resistance according to claim 1, wherein in step S4, the length of the external dimension of the carrier plate after processing is 40mm, and the width thereof is 30mm.
4. The method for P-band high-power mismatch resistance according to claim 1, wherein step S5 comprises the following specific steps:
s50: selecting a Rogers4350B plate as a substrate of the PCB;
s51: selecting a printed board with the thickness delta of 0.508 mm;
s52: carrying out gold precipitation treatment on the front and back surfaces of the PCB;
s53: and metallizing the through holes on the PCB.
5. The method for P-band high-power mismatch resistance according to claim 4, wherein in step S5, the length of the external dimension of the processed PCB is 38mm, the width is 28mm, and the width of the strip line on the PCB is 1.2mm.
6. A method for P-band high power mismatch resistance according to claim 1, wherein the cleanliness of PCB pads is checked prior to assembly in step S6.
7. The method for P-band high power mismatch resistance according to claim 1, wherein in step S7, the rf cable is soldered to the PCB by soldering iron and solder.
8. The method for P-band high power mismatch resistance according to claim 7, wherein during the welding of step S7, the welding temperature is 350 ℃ and the welding time is 3S.
9. The method for P-band high power mismatch resistance according to claim 8, further comprising the following steps after the welding in step S8:
s80: checking whether the welding point has a welding defect of cold joint, welding slag inclusion or welding air hole;
s81: and (3) cleaning and decontaminating the welded PCB with the board washing water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311085860.5A CN116845515B (en) | 2023-08-28 | 2023-08-28 | High-power mismatch resistance method applied to P wave band |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311085860.5A CN116845515B (en) | 2023-08-28 | 2023-08-28 | High-power mismatch resistance method applied to P wave band |
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| CN116845515A CN116845515A (en) | 2023-10-03 |
| CN116845515B true CN116845515B (en) | 2023-11-14 |
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| CN201812914U (en) * | 2009-08-12 | 2011-04-27 | 摩比天线技术（深圳）有限公司 | Variable-standing wave high-power mismatching load |
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| Title |
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| CN116845515A (en) | 2023-10-03 |
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