CN116840355A - Ultrasonic area array probe, sensor and flaw detection equipment - Google Patents
Ultrasonic area array probe, sensor and flaw detection equipment Download PDFInfo
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- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/04—Analysing solids
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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Abstract
The application relates to the field of nondestructive testing, and discloses an ultrasonic area array probe, a sensor and flaw detection equipment, wherein the ultrasonic area array probe comprises a piezoelectric wafer layer and a signal regulation layer, the signal regulation layer is provided with a plurality of transmission ports and signal pins, the transmission ports are used for being connected with an ultrasonic area array flaw detector through cable core wires, the piezoelectric wafer layer is provided with a plurality of piezoelectric array elements, the signal pins are in one-to-one correspondence with the piezoelectric array elements, and the corresponding signal pins are electrically connected with the piezoelectric array elements. The number of transmission ports is smaller than the number of piezoelectric array elements. The signal regulating layer is used for conducting the ultrasonic area array flaw detector and the piezoelectric array elements according to the time sequence so as to orderly receive the excitation signals and trigger the piezoelectric array elements, and the transmission port orderly transmits pulse signals of the piezoelectric array elements. The application can effectively reduce the number of cable cores in the ultrasonic area array flaw detection equipment, reduce the volume and weight of the ultrasonic area array flaw detection equipment and improve the portability and detection efficiency of the ultrasonic area array flaw detection equipment.
Description
Technical Field
The application relates to the field of nondestructive testing, in particular to an ultrasonic area array probe, a sensor and flaw detection equipment.
Background
Nondestructive testing (Non-destructive Testing, NDT) is a method of detecting internal and surface defects of an object without damaging it. Common non-destructive testing includes: radiographic detection (Radiographic Testing, RT): the object is penetrated with radiation and then an image is acquired at the back. Defects inside the object are displayed in the image; ultrasound detection (Ultrasonic Testing, UT): ultrasonic waves are used to penetrate the object and reflect back when a defect is encountered. By analyzing the characteristics of the reflected waves, the position and size of the defect can be determined; magnetic particle detection (Magnetic Particle Testing, MT): by magnetizing an object and scattering magnetic powder on the surface thereof, defects on the surface or near-surface are detected. The magnetic field changes at the defect, so that magnetic powder is accumulated at the defect; liquid permeation detection (Liquid Penetrant Testing, PT): defects open to the surface are found by applying special fluorescent or pigment penetrants. The penetrant penetrates into these defects, which are then revealed by cleaning and development steps.
The ultrasonic probe is a key component for ultrasonic retrieval, wherein the area array probe is a core component in a real-time three-dimensional ultrasonic imaging system, and particularly, a wafer of the area array ultrasonic probe is cut in the transverse direction and the longitudinal direction, so that sound beams are focused in the longitudinal direction and the transverse direction to the thickness, noise caused by the thickness of the sound beams is effectively reduced, and higher contrast and high-resolution image quality can be provided.
The wafer is composed of a plurality of individual piezoelectric array elements, each of which requires an individual wire connection to produce an individual pulse signal. Because the array elements of the area array ultrasonic probe are more than those of a common ultrasonic probe, more cable outlet ports are required to be arranged on a limited circuit board, and the wiring difficulty of the circuit board is greatly increased. The number of the piezoelectric array elements is in direct proportion to the quality of the generated image, and the larger the number of the piezoelectric array elements in a unit space is, the higher the resolution and the contrast of the generated image are, so that more array elements are required to be arranged in a limited space in order to improve the detection precision of the probe, the size of a single piezoelectric array element is reduced along with the increase of the number of the array elements, the wiring difficulty of a wafer is further increased, the number of the lead-out cables is increased, more core wires are required, and the cables with larger outer diameters are required to perform data transmission, so that the production difficulty and the production cost of the probe are increased, the volume and the weight of ultrasonic area array flaw detection equipment are increased, and the portability and the detection efficiency of the ultrasonic area array flaw detection equipment are reduced.
Disclosure of Invention
In order to improve the problems, the application provides an ultrasonic area array probe, a sensor and flaw detection equipment.
In a first aspect, the application provides an ultrasonic area array probe, which adopts the following technical scheme:
an ultrasonic area array probe for connection with an ultrasonic area array flaw detector, comprising: a piezoelectric wafer layer and a signal conditioning layer;
the signal regulation and control layer is provided with a plurality of transmission ports, the transmission ports are used for being connected with the ultrasonic area array flaw detector through cable cores to receive excitation signals, and the excitation signals are used for triggering the piezoelectric wafer layer to generate pulse signals;
the signal regulation and control layer is provided with a plurality of signal pins, a plurality of piezoelectric array elements are cut on the piezoelectric wafer layer, the signal pins are in one-to-one correspondence with the piezoelectric array elements, the corresponding signal pins are electrically connected with the piezoelectric array elements, and the signal pins are used for sending excitation signals to the piezoelectric array elements and receiving pulse signals generated by the corresponding piezoelectric array elements;
the number of the transmission ports is smaller than that of the piezoelectric array elements, the signal regulation and control layer is used for conducting the ultrasonic area array flaw detector and the piezoelectric wafer layer according to a time sequence so as to orderly receive the excitation signals and orderly trigger the piezoelectric array elements, and the transmission ports are used for orderly transmitting pulse signals of the piezoelectric array elements.
Through adopting above-mentioned technical scheme, the signal regulation and control layer sets up signal pin and is connected with piezoelectricity array element, and the interface butt joint is convenient, has reduced the wiring degree of difficulty, has reduced the production degree of difficulty and manufacturing cost.
The signal regulating layer is used for conducting the ultrasonic area array flaw detector and the piezoelectric wafer layer according to the time sequence, all excitation signals for triggering the piezoelectric array elements can be received without setting transmission ports consistent with the number of the piezoelectric array elements, so that each piezoelectric array element can be triggered, the signal regulating layer is used for conducting the ultrasonic area array flaw detector and the piezoelectric wafer layer according to the time sequence, pulse signals of each array element can be controlled to orderly pass through a limited cable core line according to the time sequence, and the purpose that the same cable core line transmits pulse signals of a plurality of array elements in different time periods is achieved.
In summary, by means of the arrangement, the ultrasonic area array probe and the ultrasonic area array flaw detector are connected and combined to form the ultrasonic area array flaw detection equipment, so that the number of cable cores can be effectively reduced, the volume and weight of the ultrasonic area array flaw detection equipment are reduced, and the portability and detection efficiency of the ultrasonic area array flaw detection equipment are improved.
Illustratively, the signal pins are wire-bonded to the piezoelectric array elements.
Through adopting above-mentioned technical scheme, can make the arrangement of piezoelectricity array element compacter, can cut more piezoelectricity array element in limited space, the more piezoelectricity array element quantity in the unit space, the resolution ratio and the contrast ratio of the image of production just are high, consequently so set up can improve the detection precision of supersound area array probe.
Illustratively, the piezoelectric wafer layer and the signal conditioning layer are disposed opposite to each other, and an ultrasonic backing layer is filled between the piezoelectric wafer layer and the signal conditioning layer, and is used for supporting the piezoelectric wafer layer and the signal conditioning layer.
Through adopting above-mentioned technical scheme, the supersound backing layer can provide physical support for piezoelectricity wafer layer and signal regulation and control layer, avoids the external force to lead to bond metal line deformation simultaneously, destroys electrical connection, and further, can also prevent effectively that substances such as dust, moisture from invading the stable shape that destroys electrical connection.
Moreover, in ultrasonic detection, when a piezoelectric wafer is excited to generate ultrasonic waves, the piezoelectric wafer does not immediately stop vibrating, but continues to generate some oscillations. The ultrasound waves generated by these oscillations are also received, thereby producing some "echo" or "noise" in the received signal, which may affect the accuracy of the ultrasound detection. The ultrasonic backing layer absorbs reflected sound waves to some extent, reducing the loss of ineffective reflected sound waves and acoustic energy, thereby improving the detection performance of the device.
Illustratively, an impedance adapting layer is attached to one side of the piezoelectric wafer layer away from the signal regulating layer, and the impedance adapting layer is used for being attached to an object to be tested for ultrasonic transmission.
By adopting the technical scheme, the impedance adapting layer can improve the transmission of ultrasonic waves between the piezoelectric wafer and the object to be detected, reduce the reflection and diffraction of the ultrasonic waves caused by impedance mismatch, and improve the transmission efficiency of the ultrasonic waves.
Specifically, in the actual detection process, after the piezoelectric array element is triggered and vibrates to generate ultrasonic waves, the ultrasonic waves are transmitted into the object to be detected from the piezoelectric array element, and the piezoelectric array element and the object to be detected both belong to transmission media of the ultrasonic waves, but acoustic impedances of the piezoelectric array element and the object to be detected may have great difference (product of sound velocity and density), so that part of the ultrasonic waves are reflected back to the piezoelectric array element, and transmission efficiency of the ultrasonic waves is reduced. And through setting up impedance adaptation layer between piezoelectric wafer and the object of awaiting measuring, select the acoustic impedance to be the material of the geometric mean value of piezoelectric wafer and object acoustic impedance of awaiting measuring to make impedance adaptation layer, when the ultrasonic wave passes through impedance adaptation layer, can reduce the abrupt change of acoustic impedance, reduce the ultrasonic wave of reflection in order to improve the transmission efficiency of ultrasonic wave.
Illustratively, the piezoelectric wafer layer and the signal regulation layer are oppositely arranged, an impedance adapting layer is attached to one side, away from the signal regulation layer, of the piezoelectric wafer layer, and the impedance adapting layer is used for being attached to an object to be tested for ultrasonic transmission.
By adopting the technical scheme, the impedance adapting layer can improve the transmission of ultrasonic waves between the piezoelectric wafer and the object to be detected, reduce the reflection and diffraction of the ultrasonic waves caused by impedance mismatch, and improve the transmission efficiency of the ultrasonic waves.
Illustratively, the probe further comprises a probe housing, wherein the piezoelectric wafer layer, the signal conditioning layer and the impedance adapting layer are integrally packaged and located in the probe housing, and the probe housing is provided with a cable connector for allowing the cable core wire to penetrate.
By adopting the technical scheme, the probe shell provides a protection for the piezoelectric wafer layer, the signal regulation and control layer and the impedance adapting layer, and can prevent the sensitive components from being affected by physical damage, pollution or environmental conditions (such as humidity and temperature), thereby enhancing the durability and the reliability of the equipment. The design of the integrated package makes the whole system more compact and stable, and is beneficial to improving the performance and long-term stability of the ultrasonic area array probe.
Illustratively, the piezoelectric wafers are ceramic piezoelectric wafers, which are polygonal area array wafers or circular area array wafers.
By adopting the above technical solution, ceramic piezoelectric wafers generally have a higher piezoelectric coefficient, meaning that they can produce a stronger piezoelectric effect at the same electric field strength. This results in a higher performance ultrasonic area array probe that can more accurately and efficiently detect ultrasonic signals. And the ceramic material has higher mechanical strength and heat resistance, and the ceramic piezoelectric wafer ultrasonic area array probe can stably work in various severe environments and has longer service life.
Designing the piezoelectric wafer as a polygonal area array wafer or a circular area array wafer can allow the user to select according to their particular application needs. For example, a polygonal area array wafer may be more suitable for scanning over a wide area, while a circular area array wafer may be more suitable for point-to-point accurate inspection.
In a second aspect, the application provides an ultrasonic area array sensor, which adopts the following technical scheme:
the ultrasonic area array sensor comprises the ultrasonic area array probe and an ultrasonic connector, wherein the ultrasonic connector comprises a cable group, the cable group comprises a first connector and a second connector, the first connector is connected with the transmission port, and the second connector is used for being connected with an ultrasonic area array flaw detector.
By adopting the technical scheme, the second connector is used for being connected with the ultrasonic area array flaw detector, not only can be matched with equipment of a specific brand or model for use, but also can have certain universality and is compatible with various ultrasonic area array flaw detectors.
Illustratively, the cable set includes a plurality of cable core wires, the cable core wires and the transmission ports are in one-to-one correspondence to form a plurality of signal transmission channels, the signal transmission channels are used for conducting the ultrasonic area array probe and the ultrasonic area array flaw detector, the cable core wires include a first connecting end and a second connecting end, a plurality of the first connecting ends are gathered to form the first joint, and a plurality of the second connecting ends are gathered to form the second joint.
By adopting the technical scheme, each cable core wire corresponds to one transmission port so as to construct a plurality of independent signal transmission channels for connecting the ultrasonic area array probe and the ultrasonic area array flaw detector, the piezoelectric array elements can be triggered orderly, signals can also pass orderly, and the purpose of transmitting pulse signals of a plurality of array elements in different time periods by the same cable core wire is realized.
The multiple connecting ends are gathered to form the joint, so that the structure of the cable group is more compact, the occupied space is smaller, and the cable group is more convenient to install and use.
In a third aspect, the application provides an ultrasonic area array flaw detection device, which adopts the following technical scheme:
the ultrasonic area array flaw detection device comprises the ultrasonic area array sensor and the ultrasonic area array flaw detector, wherein the ultrasonic area array flaw detector comprises a signal processor and an imaging display, the signal processor is used for sending out the excitation signal, receiving and processing the pulse signal so as to transmit the pulse signal to the imaging display in an imaging signal mode, and the imaging display is used for receiving and displaying the imaging signal.
By adopting the technical scheme, the ultrasonic area array sensor and the ultrasonic area array flaw detector are connected to form the ultrasonic area array flaw detection equipment, so that the ultrasonic area array flaw detection equipment with smaller volume and lower quality can be provided, and the portability and the detection efficiency of the ultrasonic area array flaw detection equipment are improved.
In summary, the present application includes at least one of the following beneficial technical effects:
1. the signal pins are arranged on the signal regulating layer. The connection signal regulating layer is connected with the piezoelectric array element, so that wiring difficulty is reduced, and production difficulty and production cost are reduced.
2. The ultrasonic area array flaw detector and the piezoelectric wafer layer are conducted according to the time sequence through the signal regulating layer, all excitation signals for triggering the piezoelectric array elements can be received without setting transmission ports consistent with the number of the piezoelectric array elements, so that each piezoelectric array element can be triggered, the signal regulating layer can conduct the ultrasonic area array flaw detector and the piezoelectric wafer layer according to the time sequence, pulse signals of each array element can be controlled to orderly pass through a limited cable core wire according to the time sequence, and the purpose that the same cable core wire transmits pulse signals of a plurality of array elements in different time periods is achieved.
Drawings
Fig. 1 is a schematic structural view of an ultrasonic area array probe.
Fig. 2 is a schematic diagram of a second structure of an ultrasonic area array probe.
Fig. 3 is a schematic view of the shape of a piezoelectric wafer layer.
Fig. 4 is a schematic structural view of an ultrasonic area array sensor.
Fig. 5 is a schematic structural diagram of an ultrasonic area array flaw detection device.
Reference numerals illustrate:
1. a piezoelectric wafer layer; 11. a piezoelectric array element; 2. a signal conditioning layer; 21. a signal pin; 22. transmission port 3, wire bonding; 4. an ultrasonic backing layer; 5. an impedance adapting layer; 6. a probe housing; 7. a cable connector; 8. an ultrasonic connector; 81. a cable group; 811. a first joint; 812. a second joint; 813. a cable core; 8131. a first connection end; 8132. a second connection end; 9. an ultrasonic area array flaw detector; 91. a signal processor; 92. an imaging display.
Detailed Description
The present application will be described in further detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
The embodiment of the application discloses an ultrasonic area array probe. Referring to fig. 1, an ultrasonic area array probe for connection with an ultrasonic area array flaw detector 9, comprising: the piezoelectric chip layer 1 and the signal regulating layer 2 are arranged opposite to each other, and the piezoelectric chip layer 1 and the signal regulating layer 2 are arranged opposite to each other.
Referring to fig. 1 and 2, the signal conditioning layer 2 is provided with a plurality of signal pins 21, a plurality of piezoelectric array elements 11 are cut on the piezoelectric wafer layer 1, the signal pins 21 are in one-to-one correspondence with the piezoelectric array elements 11, and the corresponding signal pins 21 are electrically connected with the piezoelectric array elements 11. In various embodiments, the signal pin 21 may be electrically connected to the piezoelectric array element 11 in various manners, and embodiments of the present application specifically but not limited to one manner of electrical connection, where the signal pin 21 is connected to the piezoelectric array element 11 through the wire bond 3. Wire bond 3 uses thin wires that are tightly bonded to piezoelectric element 11 and signal pin 21 using heat or pressure or ultrasonic energy, and specifically, a wire may be melted to form a pellet and then pressed against piezoelectric element 11. The wire bonding 3 machine then straightens the metal wire and connects the metal wire with the signal pin 21. The signal pin 21 and the piezoelectric array element 11 are connected by using the wire bonding 3, so that stable electrical connection can be provided for the ultrasonic area array probe, the contact area of the wire bonding 3 is small, more piezoelectric array elements 11 can be connected in a limited space, and the larger the number of the piezoelectric array elements 11 in a unit space is, the higher the resolution and the contrast of the generated image are.
The signal regulating layer 2 is provided with a plurality of transmission ports 22, the transmission ports 22 are used for being connected with the ultrasonic area array flaw detector 9 through a cable core wire 813 to receive excitation signals, the excitation signals are used for triggering the piezoelectric wafer layer 1 to generate pulse signals, and the signal pins 21 are used for sending the excitation signals to the piezoelectric array elements 11 and receiving the pulse signals generated by the corresponding piezoelectric array elements 11.
Specifically, during detection, the transmission port 22 receives an excitation signal from the ultrasonic area array flaw detector 9, and transmits the excitation signal to the corresponding piezoelectric array element 11 through the signal pin 21, so that the piezoelectric array element 11 mechanically vibrates, and emits ultrasonic waves towards an object to be detected, and when the piezoelectric array element 11 receives the ultrasonic waves returned from the object to be detected, a pulse signal is generated, and the pulse signal is transmitted towards the ultrasonic area array flaw detector 9 through the corresponding signal pin 21 and the transmission port 22.
When the piezoelectric crystal emits ultrasonic waves to detect objects, each piezoelectric array element 11 is regarded as an independent ultrasonic transmitting and receiving unit, each piezoelectric array element 11 needs to receive excitation signals and transmit pulse signals through a signal transmission channel, the cable core wire 813 is a signal transmission channel between the ultrasonic area array probe and the ultrasonic area array flaw detector 9, in order to effectively reduce the number of the cable core wires 813, reduce the volume and weight of the ultrasonic area array flaw detector, and improve the portability and detection efficiency of the ultrasonic area array flaw detector. So set up, need not set up the transmission port 22 unanimous with the 11 quantity of piezoelectricity array and also can receive all excitation signals that are used for triggering piezoelectricity array 11 to realize that every piezoelectricity array 11 can all be triggered, and signal regulation and control layer 2 switches on supersound area array fault detector 9 and piezoelectricity wafer layer 1 according to the time sequence can also control the pulse signal of every array element to pass in order on limited cable core wire 813 according to the time sequence, realize same cable core wire 813 and transmit the purpose of the pulse signal of a plurality of array elements in different time slots.
In particular, but not by way of limitation, the embodiment of the present application provides an ultrasonic area array probe, the piezoelectric wafer layer 1 of the ultrasonic area probe is a rectangular area array crystal, and includes one hundred sixty piezoelectric array elements 11, typically one hundred sixty piezoelectric array elements 11 require one hundred sixty cable cores 813 to be connected in a one-to-one correspondence, in the embodiment of the present application, the signal conditioning layer 2 is provided with ten transmission ports 22, and the ten transmission ports 22 are all disposed on a side of the signal conditioning layer 2 away from the piezoelectric wafer layer 1, and each transmission port 22 is used for connecting one cable core 813, so that when the ultrasonic area array probe is connected with the ultrasonic area array flaw detector 9, only ten cable cores 813 are required. In actual detection, the signal regulating layer 2 sequentially conducts the ultrasonic area array flaw detector 9 and the piezoelectric array elements 11 according to a time sequence, specifically, ten excitation signals are conducted through ten cable cores 813 in one microsecond at zero point, the ultrasonic area array flaw detector 9 and the first to ten piezoelectric array elements 11 of the piezoelectric wafer layer 1 are conducted, so that the first to ten piezoelectric array elements 11 are triggered to generate mechanical vibration, and the ultrasonic area array flaw detector 9 can receive pulse signals sent by the first to ten piezoelectric array elements 11; in the second microsecond of zero point, ten cable core wires 813 pass ten excitation signals, and the ultrasonic area array flaw detector 9 and the eleventh to twentieth piezoelectric array elements 11 of the piezoelectric wafer layer 1 are conducted to trigger the eleventh to twentieth piezoelectric array elements 11 of the piezoelectric wafer layer 1 to generate mechanical vibration, so that the ultrasonic area array flaw detector 9 can receive pulse signals sent by the eleventh to twentieth piezoelectric array elements 11; in three microseconds at zero, ten cable cores 813 pass ten excitation signals, the ultrasonic area array flaw detector 9 and twenty-first to thirty piezoelectric array elements 11 of the piezoelectric wafer layer 1 are conducted to trigger the twenty-first to thirty piezoelectric array elements 11 of the piezoelectric wafer layer 1 to generate mechanical vibration, so that the ultrasonic area array flaw detector 9 can receive pulse signals … sent by the twenty-first to thirty piezoelectric array elements 11 and the like, and each piezoelectric array element 11 can be excited orderly in such a cycle. Further, the excitation sequence may also be changed according to the actual situation, for example, ten excitation signals conduct the ultrasonic area array flaw detector 9 and the first to tenth piezoelectric array elements 11 of the piezoelectric wafer layer 1 at one microsecond of zero point, ten excitation signals conduct the ultrasonic area array flaw detector 9 and the second to eleventh piezoelectric array elements 11 of the piezoelectric wafer layer 1 at two microseconds of zero point, and so on.
In order to improve the stability of the connection between the piezoelectric wafer layer 1 and the signal conditioning layer 2, and avoid deformation of bond wires and destruction of electrical connection caused by external force, a structure, particularly but not exclusively, is provided, in which an ultrasonic backing material is filled between the piezoelectric wafer layer 1 and the signal conditioning layer 2 to form an ultrasonic backing layer 4 for supporting the piezoelectric wafer layer 1 and the signal conditioning layer 2. The ultrasonic backing material is usually made of low acoustic impedance materials such as rubber or epoxy resin, and the ultrasonic backing layer 4 made of the low acoustic impedance materials not only can provide physical support for the piezoelectric wafer layer 1 and the signal regulating layer 2 and prevent substances such as dust, moisture and the like from invading to damage the stability of electrical connection, but also can absorb ultrasonic waves reflected by an object to be detected, so that the loss of ineffective acoustic wave reflection and acoustic wave energy is reduced, and the resolution and the accuracy of detection are improved.
Further, in the actual detection process, after the piezoelectric array element 11 is triggered to vibrate to generate ultrasonic waves, the ultrasonic waves are transmitted into the object to be detected from the piezoelectric array element 11, and the piezoelectric array element 11 and the object to be detected all belong to transmission media of the ultrasonic waves, but acoustic impedances of the piezoelectric array element 11 and the object to be detected may have great difference (product of sound velocity and density), so that part of the ultrasonic waves are reflected back to the piezoelectric array element 11, and transmission efficiency of the ultrasonic waves is reduced. In order to improve the transmission efficiency of ultrasonic waves, a structure is specifically but not limitatively provided, wherein an impedance adapting layer 5 is attached to one side, away from the signal regulating layer 2, of the piezoelectric wafer layer 1, and the impedance adapting layer 5 is used for being attached to an object to be tested, so that ultrasonic waves are transmitted, abrupt changes of acoustic impedance are reduced, and the transmission efficiency of the ultrasonic waves is improved. The impedance adapting layer 5 is typically made of a medium acoustic impedance material such as medium acoustic impedance oxygen resin, alumina or titania. Further, in practical applications, the impedance adapting layer 5 is typically precisely controlled to be a quarter of the wavelength of the ultrasonic wave in order to further enhance the impedance matching effect.
It should be noted that, in different embodiments, the piezoelectric wafer layer 1 may be made of different materials, and only needs to have enough piezoelectric performance, where the piezoelectric performance refers to that the piezoelectric material may generate electric charges when being subjected to mechanical pressure or generate physical deformation under the action of an electric field. As an example, the piezoelectric wafer layer 1 in the embodiment of the present application is made of ceramic having sufficient piezoelectric properties, and in particular, lead titanate (PZT) ceramic in which centers of positive charges and negative charges do not coincide in a crystal structure of the ceramic to form an electric dipole moment may be used. Under the action of an external electric field, the electric dipole moment can be oriented, so that the ceramic volume is slightly changed, and the inverse piezoelectric effect occurs. Conversely, under the action of mechanical pressure, the orientation of the electric dipole moment changes, thereby generating an electric charge, i.e. its piezoelectric effect. Furthermore, the lead titanate ceramic can also change the crystal structure and the electrical property by adding different dopants, thereby obtaining various materials with different piezoelectric properties and providing wide choices for the application of the ultrasonic area array probe.
Referring to fig. 3, the piezoelectric wafer layer 1 may have different shapes besides a rectangular area array wafer, and in practical application, the shape of the piezoelectric wafer layer 1 may be designed according to an application scenario of an ultrasonic area array probe, and may also be a circular area array wafer or a special-shaped area array wafer.
In order to avoid physical damage to the piezoelectric wafer layer 1, the signal conditioning layer 2, the ultrasonic backing layer 4 and the impedance adapting layer 5, a structure is specifically but not limitatively provided, the ultrasonic area array probe further comprises a probe shell 6, the piezoelectric wafer layer 1, the signal conditioning layer 2, the ultrasonic backing layer 4 and the impedance adapting layer 5 are integrally packaged and then fixed in the probe shell 6, the probe shell 6 is provided with a cable connector 7, so that a cable core 813 can penetrate into the probe shell 6 to be connected with a transmission port 22 when the ultrasonic area array probe is connected with the ultrasonic area array flaw detector 9, and the cable connector 7 can also protect the cable core 813. The probe housing 6 can play a role in dust and water prevention, in particular, because the ultrasonic area array probe may be applied in some severe environments, the probe housing 6 needs to have sufficient corrosion resistance, and in the embodiment of the present application, the probe housing 6 is made of stainless steel, which may be stainless steel 316 or stainless steel 304.
Referring to fig. 4, a second embodiment of the present application discloses an ultrasonic area array sensor. The ultrasonic area array sensor comprises the ultrasonic area array probe and an ultrasonic connector 8, wherein the ultrasonic connector 8 comprises a cable group 81, the cable group 81 comprises a first connector 811 and a second connector 812, the first connector 811 is connected with a transmission port 22, and the second connector 812 is used for being connected with an ultrasonic area array flaw detector 9. Specifically, the cable set 81 includes a plurality of cable core wires 813, the cable core wires 813 correspond to the transmission ports 22 one by one to form a plurality of signal transmission channels for conducting the ultrasonic area array probe and the ultrasonic area array flaw detector 9, the cable core wires 813 include a first connection end 8131 and a second connection end 8132, the plurality of first connection ends 8131 gather to form a first joint 811, and the plurality of second connection ends 8132 gather to form a second joint 812.
Referring to fig. 5, a third embodiment of the present application discloses an ultrasonic area array flaw detection apparatus. The ultrasonic area array flaw detection device comprises the ultrasonic area array sensor and the ultrasonic area array flaw detector 9, wherein the ultrasonic area array flaw detector 9 comprises a signal processor 91 and an imaging display 92, the signal processor 91 is used for sending out an excitation signal and receiving and processing a pulse signal so as to transmit the pulse signal to the imaging display 92 in an imaging signal mode, and the imaging display 92 is used for receiving and displaying the imaging signal. Specifically, the signal processor 91 amplifies, filters, and the like the pulse signal and converts the pulse signal into an imaging signal.
The above embodiments are not intended to limit the scope of the present application, so: all equivalent changes in structure, shape and principle of the application should be covered in the scope of protection of the application.
Claims (10)
1. An ultrasonic area array probe for connection with an ultrasonic area array flaw detector (9), comprising: a piezoelectric wafer layer (1) and a signal regulating layer (2);
the signal regulation and control layer (2) is provided with a plurality of transmission ports (22), the transmission ports (22) are used for being connected with the ultrasonic area array flaw detector (9) through a cable core wire (813) to receive excitation signals, and the excitation signals are used for triggering the piezoelectric wafer layer (1) to generate pulse signals;
the signal regulation and control layer (2) is provided with a plurality of signal pins (21), a plurality of piezoelectric array elements (11) are cut on the piezoelectric wafer layer (1), the signal pins (21) are in one-to-one correspondence with the piezoelectric array elements (11), the corresponding signal pins (21) are electrically connected with the piezoelectric array elements (11), and the signal pins (21) are used for sending excitation signals to the piezoelectric array elements (11) and receiving pulse signals generated by the corresponding piezoelectric array elements (11);
the number of the transmission ports (22) is smaller than that of the piezoelectric array elements (11), the signal regulating and controlling layer (2) is used for conducting the ultrasonic area array flaw detector (9) and the piezoelectric wafer layer (1) according to a time sequence so as to orderly receive the excitation signals and orderly trigger the piezoelectric array elements (11), and the transmission ports (22) are used for orderly transmitting pulse signals of the piezoelectric array elements (11).
2. Ultrasonic area array probe according to claim 1, characterized in that the signal pins (21) are connected to the piezo-electric array elements (11) by wire bonds (3).
3. The ultrasonic area array probe according to claim 2, wherein the piezoelectric wafer layer (1) and the signal regulating layer (2) are oppositely arranged, an ultrasonic backing layer (4) is filled between the piezoelectric wafer layer (1) and the signal regulating layer (2), and the ultrasonic backing layer (4) is used for supporting the piezoelectric wafer layer (1) and the signal regulating layer (2).
4. An ultrasonic area array probe according to claim 3, characterized in that an impedance adapting layer (5) is attached to one side of the piezoelectric wafer layer (1) away from the signal regulating layer (2), and the impedance adapting layer (5) is used for being attached to an object to be tested for ultrasonic transmission.
5. The ultrasonic area array probe according to claim 1, wherein the piezoelectric wafer layer (1) and the signal regulating layer (2) are oppositely arranged, an impedance adapting layer (5) is attached to one side, away from the signal regulating layer (2), of the piezoelectric wafer layer (1), and the impedance adapting layer (5) is used for being attached to an object to be tested for ultrasonic transmission.
6. The ultrasonic area array probe according to claim 4, further comprising a probe housing (6), wherein the piezoelectric wafer layer (1), the signal conditioning layer (2) and the impedance adapting layer (5) are integrally encapsulated and located in the probe housing (6), and wherein the probe housing (6) is provided with a cable connector (7) for the penetration of the cable core (813).
7. The ultrasonic area array probe of any one of claims 1-6, wherein the piezoelectric wafer is a ceramic piezoelectric wafer, and the piezoelectric wafer is a polygonal area array wafer or a circular area array wafer.
8. An ultrasonic area array sensor, characterized by comprising the ultrasonic area array probe and an ultrasonic connector (8) according to any one of claims 1-6, wherein the ultrasonic connector (8) comprises a cable set (81), the cable set (81) comprises a first connector (811) and a second connector (812), the first connector (811) is connected with the transmission port (22), and the second connector (812) is used for being connected with an ultrasonic area array flaw detector (9).
9. The ultrasonic area array sensor according to claim 8, wherein the cable group (81) comprises a plurality of cable core wires (813) to form a plurality of signal transmission channels, the cable core wires (813) are in one-to-one correspondence with the transmission ports (22) and are used for conducting the ultrasonic area array probe and the ultrasonic area array flaw detector (9), the cable core wires (813) comprise a first connecting end (8131) and a second connecting end (8132), a plurality of the first connecting ends (8131) are gathered to form the first joint (811), and a plurality of the second connecting ends (8132) are gathered to form the second joint (812).
10. An ultrasonic area array flaw detection device, characterized by comprising the ultrasonic area array sensor and the ultrasonic area array flaw detector (9) according to any one of claims 8-9, wherein the ultrasonic area array flaw detector (9) comprises a signal processor (91) and an imaging display (92), the signal processor (91) is used for sending out the excitation signal, for receiving and processing the pulse signal so as to transmit the pulse signal to the imaging display (92) in an imaging signal manner, and the imaging display (92) is used for receiving and displaying the imaging signal.
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|---|---|---|---|
| CN202310821850.7A CN116840355A (en) | 2023-07-05 | 2023-07-05 | Ultrasonic area array probe, sensor and flaw detection equipment |
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| CN202310821850.7A CN116840355A (en) | 2023-07-05 | 2023-07-05 | Ultrasonic area array probe, sensor and flaw detection equipment |
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| CN202310821850.7A Pending CN116840355A (en) | 2023-07-05 | 2023-07-05 | Ultrasonic area array probe, sensor and flaw detection equipment |
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