CN210665625U - Double-crystal composite ultrasonic probe with high sensitivity - Google Patents
Double-crystal composite ultrasonic probe with high sensitivity Download PDFInfo
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- CN210665625U CN210665625U CN201921608777.0U CN201921608777U CN210665625U CN 210665625 U CN210665625 U CN 210665625U CN 201921608777 U CN201921608777 U CN 201921608777U CN 210665625 U CN210665625 U CN 210665625U
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Abstract
A high-sensitivity bicrystal composite ultrasonic probe comprises a shell, a wedge block, a sound insulation layer, a backing material, an ultrasonic wave transmitting wafer and an ultrasonic wave receiving wafer, wherein the wedge block is octagonal, the angles of a left upper bevel edge and a right upper bevel edge of the wedge block are both a first critical refraction longitudinal wave angle theta, the angle of a left lower bevel edge is the same as that of a right lower bevel edge, and the sound insulation layer is vertically arranged in the middle of the wedge block; the ultrasonic transmitting wafer is 1-3 type PZT piezoelectric ceramic, and the ultrasonic receiving wafer is a polyvinylidene fluoride piezoelectric film; the center of the ultrasonic wave transmitting wafer and the center of the ultrasonic wave receiving wafer are horizontally spaced from the sound insulation layer by a distance a,
the length of the lower bottom surface of the wedge block is L,
wherein h is the vertical distance between the center of the ultrasonic wave transmitting wafer and the lower bottom surface of the wedge block, D is the diameter of the ultrasonic wave transmitting wafer, and b is the thickness of the sound insulation layer. The ultrasonic probe has the advantages of high spatial resolution, high sensitivity, low power loss, wide bandwidth and the like.
Description
Technical Field
The utility model relates to a compound ultrasonic probe of bimorph with high sensitivity belongs to ultrasonic wave nondestructive test technical field.
Background
The existence of residual stress has great influence on the mechanical property of the material, and is particularly obvious in the manufacturing and heat treatment processes of a welding component. Therefore, the detection of the residual stress of the metal member and the welded joint has very important significance for the effects of a heat treatment process, a surface strengthening treatment process, a stress relieving process and the like. The ultrasonic detection method utilizes the acoustic-elastic effect of the material, obtains stress distribution by accurately measuring the change of the propagation speed of the ultrasonic wave in the member, and has the advantages of high sensitivity, simple and quick detection, light equipment and low cost.
At present, a bicrystal inclined probe is mainly adopted for detecting the residual stress by ultrasonic waves, and the detection precision of the bicrystal inclined probe is related to probe hardware, a coupling effect and spatial resolution. In terms of probe hardware, a PZT piezoelectric ceramic (lead zirconate titanate piezoelectric ceramic) wafer serving as a transducer element in the prior art has the defects of high acoustic impedance, narrow bandwidth, high mechanical quality factor, incapability of meeting the requirement of wide bandwidth in nondestructive testing and the like. Therefore, it is important to develop a high spatial resolution, high sensitivity and wide bandwidth ultrasonic probe for measuring residual stress.
SUMMERY OF THE UTILITY MODEL
The invention aims at providing a bimorph composite ultrasonic probe, which has the advantages of high spatial resolution, high sensitivity, low power loss, wide bandwidth and the like, and greatly improves the detection precision of the bimorph composite ultrasonic probe for detecting residual stress.
The utility model discloses the technical scheme who adopts of realizing its invention purpose is as follows:
a bimorph composite ultrasonic probe with high sensitivity comprises a shell, a wedge block, a sound insulation layer, a backing material, an ultrasonic wave transmitting wafer and an ultrasonic wave receiving wafer, wherein the wedge block is arranged at the lower part in the shell, the backing material fills the upper space of the wedge block in the shell, and the bimorph composite ultrasonic probe is structurally characterized in that:
the wedge block is octagonal, the angles of the left upper bevel edge and the right upper bevel edge of the wedge block are both a first critical refraction longitudinal wave angle theta, the angle of the left lower bevel edge is the same as that of the right lower bevel edge, and the sound insulation layer is vertically arranged in the middle of the wedge block;
the ultrasonic transmitting wafer is 1-3 type PZT piezoelectric ceramic, and the ultrasonic receiving wafer is a polyvinylidene fluoride piezoelectric film; the ultrasonic transmitting wafer and the ultrasonic receiving wafer are symmetrically fixed on the left upper bevel edge and the right upper bevel edge of the wedge block;
the center of the ultrasonic transmitting wafer is a horizontal distance a from the sound insulation layer (the ultrasonic transmitting wafer and the ultrasonic receiving wafer are symmetrically fixed on the left upper bevel edge and the right upper bevel edge of the wedge block, so the center of the ultrasonic receiving wafer is a horizontal distance a from the sound insulation layer),
the length of the lower bottom surface of the wedge block is L,
wherein h is the vertical distance from the center of the ultrasonic wave emitting wafer to the lower bottom surface of the wedge, θ is the first critical refraction longitudinal wave angle, and DThe diameter of the ultrasonic wave emitting wafer, and b the thickness of the sound insulating layer.
Furthermore, the thickness b of the sound insulation layer of the utility model is 1-2mm, and the distance between the sound insulation layer and the upper top surface of the wedge block is 2-3 mm.
Further, the voussoir is organic glass, polystyrene or polysulfone board.
The utility model discloses a backing material can adopt current backing material, and the preferred quality ratio that adopts is 3: 1, and epoxy resin.
Compared with the prior art, the beneficial effects of the utility model are that:
one, the utility model discloses the probe is the octagon with the plane voussoir design of twin crystal oblique probe commonly used, has reduced the area of contact of probe and work piece, has reduced the influence of coupling degree to residual stress measurement to reduced the stress measurement distance, improved ultrasonic stress measurement's spatial resolution, be favorable to the residual stress detection of narrow and small welding seam.
The second, 1-3 type PZT piezoelectric ceramic is a polymeric material with piezoelectric ceramic columns arranged according to a certain rule, has better electromechanical coupling coefficient, lower input power loss and high emission sensitivity compared with the common PZT piezoelectric ceramic chip, and is a good emission type piezoelectric material. The polyvinylidene fluoride (PVDF) piezoelectric film has small elastic rigidity, large mechanical damping, higher receiving sensitivity and wider frequency band receiving range, and is a good receiving piezoelectric material. The utility model discloses a 1-3 type PZT piezoceramics material adopts polyvinylidene fluoride (PVDF) piezoelectric film material as the ultrasonic wave emission wafer, has used multipurposely the high transmitting sensitivity of 1-3 type PZT and the high receiving sensitivity of PVDF, the advantage that the broadband was received, has overcome defects such as current ultrasonic probe bandeau width and power loss height, has improved ultrasonic transducer's bandwidth and sensitivity.
Drawings
Fig. 1 is a schematic view of the overall structure of the present invention.
Fig. 2 is a design schematic diagram of the wedge dimensions of the present invention.
Fig. 3 is a schematic diagram of the dimension of the wedge according to the embodiment of the present invention.
In the drawings, 1 denotes a backing material; 2 denotes an ultrasonic wave emitting wafer; 3 denotes a wedge; 4 represents a sound insulating layer; 5 denotes an ultrasonic receiving wafer; and 6 denotes a housing.
Detailed Description
A bimorph composite ultrasonic probe with high sensitivity, as shown in figure 1, comprises a shell 6, a wedge 3, a sound insulation layer 4, a backing material 1, an ultrasonic wave transmitting wafer 2 and an ultrasonic wave receiving wafer, wherein the wedge 3 is arranged at the lower part in the shell 6, and the backing material 1 fills the upper space of the wedge 3 in the shell 6; the wedge block 3 is octagonal, the angles of the upper left bevel edge and the upper right bevel edge of the wedge block 3 are both a first critical refraction longitudinal wave angle theta, the angle of the lower left bevel edge is the same as that of the lower right bevel edge, the sound insulation layer 4 is vertically arranged in the middle of the wedge block 3, the thickness of the sound insulation layer is 1-2mm, and the distance between the sound insulation layer 4 and the upper top surface of the wedge block 3 is 2-3mm (the distance between the sound insulation layer 4 and the upper top surface of the wedge block 3 can prevent the wedge block from being completely cut when the sound insulation layer is cut, so that subsequent processing is facilitated);
the ultrasonic transmitting wafer 2 is 1-3 type PZT piezoelectric ceramic, and the ultrasonic receiving wafer 5 is a polyvinylidene fluoride piezoelectric film; the ultrasonic transmitting wafer 2 and the ultrasonic receiving wafer 5 are symmetrically fixed on the upper left oblique edge and the upper right oblique edge of the wedge 3;
the center of the ultrasonic wave emitting wafer 2 is horizontally spaced a distance a from the sound-insulating layer 4,
the length of the lower bottom surface of the wedge block 3 is L,
wherein h is the vertical distance from the center of the ultrasonic wave emitting wafer 2 to the lower bottom surface of the wedge 3, theta is the first critical refraction longitudinal wave angle, D is the diameter of the ultrasonic wave emitting wafer 2, and b is the thickness of the sound insulation layer 4.
The wedge block 3 is an organic glass, polystyrene or polysulfone plate.
FIG. 2 shows the design of the wedge dimension of the present inventionSchematic diagram. When ultrasonic stress detection is carried out, ultrasonic waves transmitted by an ultrasonic transmitting wafer are transmitted to an ABC section as a shaded part in the figure 2, wherein the BC section plays a role in detection, the stress measurement distance is reduced and the length of the BC section playing a role in detection is controlled in order to improve the spatial resolution of a probe, but according to an earlier experiment, at least half of the ultrasonic waves transmitted by the ultrasonic transmitting wafer are used for detection so as to meet the measurement requirement; meanwhile, in order to obtain better detection effect, the ultrasonic wave emitted by the ultrasonic wave emitting wafer is required to be just contacted with one end C of the sound insulation layer. Therefore, according to a large number of experiments, the center of the ultrasonic wave emitting chip 2 was controlled to be horizontally distant from the sound insulating layer 4 by designing the size of the wedge
The length L of the lower bottom surface of the wedge block 3 ranges from
A probe with high sensitivity, low power consumption and wide bandwidth can be obtained.
Examples
A bimorph composite ultrasonic probe with high sensitivity comprises a shell 6, a wedge 3, a sound insulation layer 4, a backing material 1, an ultrasonic wave transmitting wafer 2 and an ultrasonic wave receiving wafer, wherein the wedge 3 is arranged at the lower part in the shell 6, and the backing material 1 fills the upper space of the wedge 3 in the shell 6; the wedge block 3 is octagonal, the angles of the left upper bevel edge and the right upper bevel edge of the wedge block 3 are both a first critical refraction longitudinal wave angle theta, theta is 22 degrees, the angle of the left lower bevel edge is the same as that of the right lower bevel edge, in the embodiment, the angles are 22 degrees, the sound insulation layer 4 is vertically arranged in the middle of the wedge block 3, the thickness of the sound insulation layer is 2mm, and the distance between the sound insulation layer 4 and the upper top surface of the wedge block is 2 mm;
in this example, the ultrasonic wave transmitting wafer 2 is 1-3 type PZT piezoelectric ceramic with a diameter D of 5mm and a center frequency of 2.5MHz, and the ultrasonic wave receiving wafer 5 is a polyvinylidene fluoride piezoelectric film with a diameter of 5 mm; the ultrasonic transmitting wafer 2 and the ultrasonic receiving wafer 5 are symmetrically fixed on the upper left oblique edge and the upper right oblique edge of the wedge 3;
the ultrasonic wave transmitting wafer 2 and the ultrasonic wave receivingThe center of the wafer 5 is at a horizontal distance a from the sound-insulating layer 4,
the length of the lower bottom surface of the wedge block 3 is L,
wherein h is the vertical distance between the centers of the ultrasonic wave transmitting wafer 2 and the ultrasonic wave receiving wafer 5 and the lower bottom surface of the wedge 3, h is 10mm, θ is the first critical refraction longitudinal wave angle, θ is 22 °, D is the diameter D of the ultrasonic wave transmitting wafer 2 which is 5mm, b is the thickness of the sound insulation layer 4, b is 2mm, and the length L of the lower bottom surface of the wedge in this example is 8 mm; the wedge dimensions of this embodiment are shown in figure 3.
In this example, the backing material 1 is a mixed material of nano tungsten powder and epoxy resin, and the mass ratio is 3: 1, the backing material 1 fills the upper space of the wedge 3 in the housing 6.
In this example, the wedge 3 is made of organic glass.
The ultrasound transmitting wafer 2 and the ultrasound receiving wafer 5 are in this case connected to an ultrasound signal processing system. The ultrasonic transmitting wafer 1-3 type PZT piezoelectric ceramics can generate vibration with different frequencies through the circuit control of an ultrasonic signal processing system, convert an input electric signal into an ultrasonic signal and transmit the ultrasonic signal to a weldment to be tested through a wedge block. The PVDF piezoelectric film of the ultrasonic receiving wafer converts ultrasonic signals transmitted by a weldment to be tested through the wedge block into electric signals and outputs the electric signals to a signal processor of an ultrasonic signal processing system, the piezoelectric response of the PVDF piezoelectric film is linear in a large range, the signals are easy to collect by a filter, the bandwidth is wide, and the sensitivity is high.
Claims (3)
1. A bimorph composite ultrasonic probe with high sensitivity comprises a shell, a wedge block, a sound insulation layer, a backing material, an ultrasonic wave transmitting wafer and an ultrasonic wave receiving wafer, wherein the wedge block is arranged at the lower part in the shell, and the backing material fills the upper space of the wedge block in the shell, and is characterized in that:
the wedge block is octagonal, the angles of the left upper bevel edge and the right upper bevel edge of the wedge block are both a first critical refraction longitudinal wave angle theta, the angle of the left lower bevel edge is the same as that of the right lower bevel edge, and the sound insulation layer is vertically arranged in the middle of the wedge block;
the ultrasonic transmitting wafer is 1-3 type PZT piezoelectric ceramic, and the ultrasonic receiving wafer is a polyvinylidene fluoride piezoelectric film; the ultrasonic transmitting wafer and the ultrasonic receiving wafer are symmetrically fixed on the left upper bevel edge and the right upper bevel edge of the wedge block;
the center of the ultrasonic wave emitting wafer is horizontally spaced from the sound insulation layer by a distance a,
the length of the lower bottom surface of the wedge block is L,
wherein h is the vertical distance between the center of the ultrasonic wave transmitting wafer and the lower bottom surface of the wedge block, theta is a first critical refraction longitudinal wave angle, D is the diameter of the ultrasonic wave transmitting wafer, and b is the thickness of the sound insulation layer.
2. The twin crystal composite ultrasonic probe with high sensitivity according to claim 1, wherein: the thickness b of the sound insulation layer is 1-2mm, and the distance between the sound insulation layer and the upper top surface of the wedge block is 2-3 mm.
3. The twin crystal composite ultrasonic probe with high sensitivity according to claim 1, wherein: the wedge block is an organic glass, polystyrene or polysulfone plate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921608777.0U CN210665625U (en) | 2019-09-26 | 2019-09-26 | Double-crystal composite ultrasonic probe with high sensitivity |
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| CN201921608777.0U CN210665625U (en) | 2019-09-26 | 2019-09-26 | Double-crystal composite ultrasonic probe with high sensitivity |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113533518A (en) * | 2021-07-14 | 2021-10-22 | 北京信泰智合科技发展有限公司 | Large-angle longitudinal wave probe and preparation method thereof |
| CN113533518B (en) * | 2021-07-14 | 2024-04-26 | 北京信泰智合科技发展有限公司 | Large-angle longitudinal wave probe and preparation method thereof |
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2019
- 2019-09-26 CN CN201921608777.0U patent/CN210665625U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113533518A (en) * | 2021-07-14 | 2021-10-22 | 北京信泰智合科技发展有限公司 | Large-angle longitudinal wave probe and preparation method thereof |
| CN113533518B (en) * | 2021-07-14 | 2024-04-26 | 北京信泰智合科技发展有限公司 | Large-angle longitudinal wave probe and preparation method thereof |
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Effective date of registration: 20230309 Address after: No. N0142, Floor 1, Building 37, No. 15, Haijiao Street, Jinjiang District, Chengdu, Sichuan Province, 610000 (self-numbered) Patentee after: Sichuan Zhongchuang Chen'an Testing Technology Co.,Ltd. Address before: 610031, No. two, section 111, North Ring Road, Jinniu District, Sichuan, Chengdu Patentee before: SOUTHWEST JIAOTONG University |