CN116827304A - Surface acoustic wave resonator, preparation method thereof and filter - Google Patents
Surface acoustic wave resonator, preparation method thereof and filter Download PDFInfo
- Publication number
- CN116827304A CN116827304A CN202310967069.0A CN202310967069A CN116827304A CN 116827304 A CN116827304 A CN 116827304A CN 202310967069 A CN202310967069 A CN 202310967069A CN 116827304 A CN116827304 A CN 116827304A
- Authority
- CN
- China
- Prior art keywords
- piezoelectric layer
- layer
- piezoelectric
- acoustic wave
- wave resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 129
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 128
- 239000010408 film Substances 0.000 claims description 136
- 238000000034 method Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 230000003750 conditioning effect Effects 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 21
- 238000010168 coupling process Methods 0.000 abstract description 21
- 238000005859 coupling reaction Methods 0.000 abstract description 21
- 238000013461 design Methods 0.000 abstract description 18
- 239000010410 layer Substances 0.000 description 279
- 238000010586 diagram Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 10
- 238000004088 simulation Methods 0.000 description 9
- 239000002356 single layer Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
Abstract
The invention provides a surface acoustic wave resonator, a preparation method thereof and a filter, and the design scheme of the surface acoustic wave resonator is not required to be adjusted, and only an adjusting component is required to be arranged above or below a piezoelectric layer of the surface acoustic wave resonator, so that orthographic projection of the adjusting component on the piezoelectric layer at least covers orthographic projection of an electrode structure on the piezoelectric layer, and the resonant frequency and the electromechanical coupling coefficient of the surface acoustic wave resonator can be adjusted by matching with the thickness and the material of the adjusting component, thereby realizing the adjustment of the performance of the surface acoustic wave resonator and meeting different application scenes.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a surface acoustic wave resonator, a preparation method thereof and a filter.
Background
A SAW (Surface Acoustic Wave ) resonator is a short term of a surface acoustic wave resonator, is a special filter device manufactured by utilizing the piezoelectric effect and the physical characteristics of surface acoustic wave propagation, and is widely used in various fields, such as a radio frequency field.
In order to meet the actual requirements of different application scenes, how to adjust the parameters of the surface acoustic wave device, such as how to adjust the resonant frequency and the electromechanical coupling coefficient of the surface acoustic wave resonator, under the condition that the design scheme of the product is not changed as much as possible is a technical problem to be solved urgently by the person skilled in the art.
Disclosure of Invention
In view of the above, the present invention provides a surface acoustic wave resonator, a method for manufacturing the same, and a filter, wherein the method comprises the following steps:
a surface acoustic wave resonator, the surface acoustic wave resonator comprising:
a piezoelectric layer having oppositely disposed first and second surfaces;
an adjustment member located on the first surface side or the second surface side, and the adjustment member is in contact with the piezoelectric layer;
and the front projection of the regulating component on the piezoelectric layer at least covers the front projection of the electrode structure on the piezoelectric layer.
Preferably, in the surface acoustic wave resonator, the material of the tuning element is a piezoelectric material, a poly-Si material, or SiO 2 Material, si 3 N 4 A material, a SiC material or a GaN material.
Preferably, in the surface acoustic wave resonator, the thickness of the adjusting member is less than 500nm in a direction perpendicular to a plane in which the piezoelectric layer is located.
Preferably, in the surface acoustic wave resonator, the adjusting component is a first film layer, and a front projection of the first film layer on the piezoelectric layer completely covers the first surface or the second surface.
Preferably, in the surface acoustic wave resonator, the adjusting component is a patterned film layer;
the front projection of the patterned film layer on the piezoelectric layer at least covers the front projection of the electrode structure on the piezoelectric layer.
Preferably, in the surface acoustic wave resonator, the piezoelectric layer is a piezoelectric thin film, a piezoelectric substrate, or a piezoelectric substrate having a piezoelectric thin film.
Preferably, in the surface acoustic wave resonator, when the piezoelectric layer is a piezoelectric substrate with a piezoelectric thin film, a groove structure is disposed on a surface of the piezoelectric substrate facing the piezoelectric thin film, and at least the front projection of the electrode structure on the piezoelectric substrate is covered by the front projection of the groove structure on the piezoelectric substrate;
wherein the adjusting part is embedded and arranged in the groove structure.
Preferably, in the surface acoustic wave resonator, the adjusting component includes N sub-film layers, and the N sub-film layers are sequentially stacked in a first direction X, where N is greater than or equal to 2, N is a positive integer, and the first direction is perpendicular to a plane where the piezoelectric layer is located.
Preferably, in the saw resonator, at least one sub-film layer of the N sub-film layers is located on the first surface of the piezoelectric layer, and at least one sub-film layer is located on the second surface of the piezoelectric layer.
Preferably, in the saw resonator, the front projection of at least one sub-film layer of the N sub-film layers on the piezoelectric layer completely covers the first surface or the second surface of the piezoelectric layer, and the front projection of at least one sub-film layer on the piezoelectric layer completely covers the front projection of the electrode structure on the piezoelectric layer.
Preferably, in the surface acoustic wave resonator, the adjusting component is located on the first surface of the piezoelectric layer, the adjusting component is a dielectric layer, the dielectric layer is located between the electrode structure and the piezoelectric layer, and the orthographic projection of the dielectric layer on the piezoelectric layer and the orthographic projection of the electrode structure on the piezoelectric layer are completely overlapped.
Preferably, in the surface acoustic wave resonator, in a direction perpendicular to a plane in which the piezoelectric layer is located, a thickness of the dielectric layer is less than 500nm, and a thickness of the dielectric layer is less than a thickness of the electrode structure.
Preferably, in the surface acoustic wave resonator, the dielectric layer includes M sub-film layers, and the M sub-film layers are sequentially stacked in a first direction, where M is greater than or equal to 2, and M is a positive integer, and the first direction is perpendicular to a plane where the piezoelectric layer is located.
Preferably, in the surface acoustic wave resonator, the dielectric layer is made of Si material, siC material, diamond material, sapphire material, LT material, LN material, znO material, gaN material, ga 2 O 3 Material, piezoelectric material, poly-Si material, siO 2 Material, si 3 N 4 A material, a SiC material or a GaN material.
The application also provides a preparation method of the surface acoustic wave resonator, which comprises the following steps:
providing a piezoelectric layer, wherein the piezoelectric layer is provided with a first surface and a second surface which are oppositely arranged;
forming an adjustment member on one side of the first surface or one side of the second surface, and the adjustment member being in contact with the piezoelectric layer;
An electrode structure is formed on one side of the first surface, wherein an orthographic projection of the adjustment member onto the piezoelectric layer covers at least an orthographic projection of the electrode structure onto the piezoelectric layer.
Preferably, in the above preparation method, the adjusting member is a first film layer, and the orthographic projection of the first film layer on the piezoelectric layer completely covers the first surface or the second surface, and the adjusting member is formed on one side of the first surface or one side of the second surface, including:
and forming a first film layer on one side of the first surface or the second surface, wherein the first film layer completely covers the first surface or the second surface of the piezoelectric layer.
Preferably, in the above preparation method, the adjusting component is a patterned film layer; wherein, the orthographic projection of the patterning film layer on the piezoelectric layer at least covers the orthographic projection of the electrode structure on the piezoelectric layer, the adjusting component is formed on one side of the first surface or one side of the second surface, and the method comprises the following steps:
forming a first graphical mask on one side of the first surface or the second surface, wherein the first graphical mask is provided with a first hollowed-out area, and the orthographic projection of the first hollowed-out area on the piezoelectric layer at least covers the orthographic projection of the electrode structure on the piezoelectric layer;
Forming the patterned film layer based on the first patterned mask;
and removing the first patterned mask.
Preferably, in the above preparation method, the forming an electrode structure on one side of the first surface includes:
forming a second graphical mask on one side of the first surface, wherein the second graphical mask is provided with a second hollowed-out area, and the orthographic projection of the adjusting part on the piezoelectric layer at least completely covers the orthographic projection of the second hollowed-out area on the piezoelectric layer;
forming the electrode structure based on the second patterned mask;
and removing the second patterned mask.
Preferably, in the above preparation method, the adjustment member is located on a first surface of the piezoelectric layer, the adjustment member is a dielectric layer, the dielectric layer is located between the electrode structure and the piezoelectric layer, an orthographic projection of the dielectric layer on the piezoelectric layer and an orthographic projection of the electrode structure on the piezoelectric layer are completely overlapped, and the adjustment member is formed on one side of the first surface or one side of the second surface, and includes:
forming a third graphical mask on one side of the first surface, wherein the third graphical mask is provided with a third hollowed-out area, and the orthographic projection of the third hollowed-out area on the piezoelectric layer is completely overlapped with the orthographic projection of the electrode structure on the piezoelectric layer;
And forming the dielectric layer based on the third patterned mask.
Preferably, in the above preparation method, the forming an electrode structure on one side of the first surface includes:
forming the electrode structure on one side of the dielectric layer, which is away from the piezoelectric layer, based on the third patterned mask;
and removing the third patterned mask.
The application also provides a filter comprising the surface acoustic wave resonator according to any one of the above.
Compared with the prior art, the application has the following beneficial effects:
according to the surface acoustic wave resonator, the preparation method and the filter thereof provided by the application, the design scheme of the surface acoustic wave resonator is not required to be adjusted, and only the adjusting component is required to be arranged above or below the piezoelectric layer of the surface acoustic wave resonator, so that the orthographic projection of the adjusting component on the piezoelectric layer at least covers the orthographic projection of the electrode structure on the piezoelectric layer, and the resonant frequency and the electromechanical coupling coefficient of the surface acoustic wave resonator can be adjusted by matching with the thickness and the material of the adjusting component, thereby realizing the adjustment of the performance of the surface acoustic wave resonator, and meeting different application scenes.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a part of a surface acoustic wave resonator according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a part of a surface acoustic wave resonator according to another embodiment of the present invention;
fig. 3 is a schematic view of a part of a structure of a surface acoustic wave resonator according to another embodiment of the present invention;
fig. 4 is a schematic view of a part of a structure of a surface acoustic wave resonator according to another embodiment of the present invention;
fig. 5 is a schematic view of a part of a structure of a surface acoustic wave resonator according to another embodiment of the present invention;
fig. 6 is a schematic view of a part of a structure of a surface acoustic wave resonator according to another embodiment of the present invention;
fig. 7 is a schematic view of a part of a structure of a surface acoustic wave resonator according to another embodiment of the present invention;
fig. 8 is a schematic view of a part of a structure of a surface acoustic wave resonator according to another embodiment of the present invention;
Fig. 9 is a schematic view of a part of a structure of a surface acoustic wave resonator according to another embodiment of the present invention;
fig. 10 is a schematic view of a part of a structure of a surface acoustic wave resonator according to another embodiment of the present invention;
fig. 11 is a schematic view of a part of a structure of a surface acoustic wave resonator according to another embodiment of the present invention;
fig. 12 is a schematic view of a part of a structure of a surface acoustic wave resonator according to another embodiment of the present invention;
fig. 13 is a schematic view of a part of a structure of a surface acoustic wave resonator according to another embodiment of the present invention;
fig. 14 is a schematic flow chart of a method for manufacturing a surface acoustic wave resonator according to an embodiment of the present invention;
fig. 15-24 are schematic views of a part of structures corresponding to the preparation method shown in fig. 14;
fig. 25 is a schematic diagram of a simulation curve of a surface acoustic wave resonator according to an embodiment of the present invention;
fig. 26 is a schematic diagram of a simulation curve of another surface acoustic wave resonator according to an embodiment of the present invention;
fig. 27 is a schematic diagram of a simulation curve of a surface acoustic wave resonator according to another embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The filter is a device for filtering interference of different-frequency signals, attenuating part of frequency components and only allowing specified frequency components to pass through, and is a technical basis for application of wireless spectrum as a non-renewable scarce resource. In which the filter is designed by using resonators as basic units, a corresponding topology can be constructed and the signal of the specified frequency component can be amplified.
Currently, filters are largely classified into SAW (Surface Acoustic Wave ) filters and BAW (BulkAcoustic Wave, bulk acoustic wave) filters, in which a surface acoustic wave is a kind of elastic wave that is generated and propagates on the surface of a piezoelectric substrate having piezoelectric characteristics, and whose amplitude rapidly decreases with increasing depth into the piezoelectric substrate. Based on the SAW filter, the manufacturing cost is much lower than that of the BAW filter, and the SAW filter is applied to a low frequency band, has low insertion loss, good inhibition and temperature sensitivity.
It should be noted that, since the SAW filter has a temperature drift defect, i.e. the frequency drifts with the operating temperature, a TC-SAW filter, i.e. a temperature compensation type SAW filter, is correspondingly produced based on the conventional SAW filter, mainly using SiO 2 The temperature elastic characteristic of the layer opposite to the piezoelectric layer realizes the compensation of the temperature drift characteristic. Further, SAW filters and products such as TF thin film SAW filters are also designed.
Based on BAW filter, it is better than SAW filter in high frequency band, Q value is high, size can decrease with increasing frequency, temperature sensitivity is low, and product designs such as XBAR (thin film bulk Acoustic resonator) and SMR (solid state assembled resonator) are provided.
After the SAW product is designed, the simulation parameters may be different from the simulation parameters in design due to the processing environment, processing technology, etc., so that the parameters of the SAW product, such as the resonant frequency and the electromechanical coupling coefficient of the SAW product, are adjusted without changing the design of the product, such as the finger width, angle, aperture, metal film thickness, etc., so as to change the frequency band and bandwidth of the SAW filter.
In the invention creation process, it is found that besides the conventional adjustment of the resonant frequency and the electromechanical coupling coefficient, a special design dilemma at present needs to be dealt with, namely the existing surface acoustic wave resonator with better performance often has higher electromechanical coupling coefficient, so that the product design with larger bandwidth can be carried out, and the requirement development trend in the 5G market environment is met; however, there are still some application scenarios in which a narrow-band design is required, or different bandwidths are required for different frequency bands, in general, the larger the electromechanical coupling coefficient is, the larger the final bandwidth is, and other performances of the resonator and the higher electromechanical coupling coefficient cannot be considered at the same time, so a technology capable of greatly reducing and adjusting the electromechanical coupling coefficient is highly required.
In the prior art, some technologies perform fine tuning by modifying product design schemes, and predict factors which may affect product performance in simulation as much as possible; obviously, the technology needs to change the design scheme of the product, can obviously increase the difficulty and cost of research and development and production, and can cause certain errors in the performance parameters of the product, so that the product is difficult to accurately adjust.
Based on the above, the embodiment of the invention provides a surface acoustic wave resonator, a preparation method thereof and a filter, and the design scheme of the surface acoustic wave resonator is not required to be adjusted, and only an adjusting component is required to be arranged above or below a piezoelectric layer of the surface acoustic wave resonator, so that orthographic projection of the adjusting component on the piezoelectric layer at least covers orthographic projection of an electrode structure on the piezoelectric layer, and the resonant frequency and the electromechanical coupling coefficient of the surface acoustic wave resonator can be adjusted by matching with adjustment of the thickness and the material of the adjusting component, thereby realizing adjustment of the performance of the surface acoustic wave resonator, and meeting different application scenes.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Referring to fig. 1, fig. 1 is a schematic diagram of a part of a surface acoustic wave resonator according to an embodiment of the present invention, referring to fig. 2, fig. 2 is a schematic diagram of a part of another surface acoustic wave resonator according to an embodiment of the present invention, where the surface acoustic wave resonator according to the embodiment of the present invention includes:
the piezoelectric layer 11, the piezoelectric layer 11 having a first surface and a second surface disposed opposite to each other, wherein the first surface may also be understood as an upper surface of the piezoelectric layer 11, and the second surface may be understood as a lower surface of the piezoelectric layer 11.
An adjusting member 12 located on one side of the first surface or on one side of the second surface, and the adjusting member 12 is in contact with the piezoelectric layer 11, it may be understood that the adjusting member 12 is located on the upper surface or the lower surface of the piezoelectric layer 11, or it may be said that the adjusting member 12 is located above or below the piezoelectric layer 11.
An electrode structure 13 located on the first surface side, the orthographic projection of the adjustment member 12 onto the piezoelectric layer 11 at least covers the orthographic projection of the electrode structure 13 onto the piezoelectric layer 11.
Specifically, in this embodiment, the design scheme of the surface acoustic wave resonator does not need to be adjusted, and only an adjusting component 12 needs to be arranged above or below the piezoelectric layer 11, so that the orthographic projection of the adjusting component 12 on the piezoelectric layer 11 at least covers the orthographic projection of the electrode structure 13 on the piezoelectric layer 11, and the resonant frequency and the electromechanical coupling coefficient of the surface acoustic wave resonator can be adjusted by matching with the thickness and the material of the adjusting component 12, thereby realizing the adjustment of the performance of the surface acoustic wave resonator, and enabling the surface acoustic wave resonator to meet different application scenarios.
Alternatively, in another embodiment of the present invention, the material of the conditioning member 12 includes, but is not limited to, piezoelectric material, poly-Si material, siO 2 Material, si 3 N 4 A material, siC material, gaN material, or the like, wherein the piezoelectric material includes, but is not limited to, an LN material, LT material, alN material, znO material, or the like.
Alternatively, in another embodiment of the invention, the thickness of the adjustment member 12 is less than 500nm in a direction perpendicular to the plane of the piezoelectric layer 11.
In particular, when the thickness of the adjusting member 12 is too large, it may be insensitive to the adjustment of the resonant frequency and the electromechanical coupling coefficient of the surface acoustic wave resonator, i.e., the adjustment sensitivity of the resonant frequency and the electromechanical coupling coefficient is low, and may even affect other properties of the surface acoustic wave resonator, so that the thickness of the adjusting member 12 is designed to be less than 500nm in the embodiment of the present invention.
Alternatively, in another embodiment of the present invention, the piezoelectric layer 11 may be a piezoelectric film or a piezoelectric substrate having a piezoelectric film.
Specifically, the material of the piezoelectric thin film in this embodiment includes, but is not limited to, LN material, LT material, alN material, sc-doped AlN material, znO material, or the like, and the material of the piezoelectric substrate includes, but is not limited to, si material, siC material, diamond material, sapphire material, LT body material, LN body material, znO material, gaN material, or Ga 2 O 3 Materials, and the like.
Alternatively, in another embodiment of the present invention, as shown in fig. 1 and 2, the adjusting member 12 is a first film layer, and the front projection of the first film layer on the piezoelectric layer 11 completely covers the surface of the piezoelectric layer 11, as shown in fig. 1, when the first film layer is located on the first surface of the piezoelectric layer 11, the front projection of the first film layer on the piezoelectric layer 11 completely covers the first surface of the piezoelectric layer 11, as shown in fig. 2, and when the first film layer is located on the second surface of the piezoelectric layer 11, the front projection of the first film layer on the piezoelectric layer 11 completely covers the second surface of the piezoelectric layer 11.
Specifically, in this embodiment, one implementation manner of the adjusting component 12 is a design of a whole surface film, that is, a whole surface film is formed on one side of the first surface or one side of the second surface of the piezoelectric layer 11, that is, the first film, and corresponding materials are selected to form the first film with a corresponding thickness based on different application requirements, so that the resonant frequency and the electromechanical coupling coefficient of the saw resonator can be adjusted, thereby realizing adjustment of the performance of the saw resonator, and enabling the saw resonator to meet different application scenarios.
Optionally, in another embodiment of the present invention, referring to fig. 3, fig. 3 is a schematic partial structure diagram of another surface acoustic wave resonator provided in an embodiment of the present invention, referring to fig. 4, fig. 4 is a schematic partial structure diagram of another surface acoustic wave resonator provided in an embodiment of the present invention, the adjusting component 12 is a patterned film layer 14, and an orthographic projection of the patterned film layer 14 on the piezoelectric layer 11 at least covers an orthographic projection of the electrode structure 13 on the piezoelectric layer 11.
Specifically, in this embodiment, as shown in fig. 3 and fig. 4, an example is described in which the front projection of the patterned film layer 14 on the piezoelectric layer 11 and the front projection of the electrode structure 13 on the piezoelectric layer 11 are completely overlapped, referring to fig. 5, fig. 5 is a schematic structural diagram of a part of another surface acoustic wave resonator according to an embodiment of the present invention, in fig. 5, the front projection of the patterned film layer 14 on the piezoelectric layer 11 completely covers the front projection of the electrode structure 13 on the piezoelectric layer 11, and the front projection area of the patterned film layer 14 on the piezoelectric layer 11 is larger than the front projection area of the electrode structure 13 on the piezoelectric layer 11.
That is, in the embodiment of the present invention, another implementation manner of the adjusting component 12 is the design of the patterned film layer 14, and corresponding materials are selected to form the patterned film layer 14 with a corresponding thickness based on different application requirements, and the resonant frequency and the electromechanical coupling coefficient of the saw resonator can be adjusted, so that the performance of the saw resonator can be adjusted, and different application scenarios can be satisfied.
It should be noted that, based on the structure shown in fig. 4, although it is theoretically possible, only the mechanical structure thereof makes the product not appear in the form shown in fig. 4, referring to fig. 6, fig. 6 is a schematic view of a part of the structure of a surface acoustic wave resonator according to another embodiment of the present invention, when the piezoelectric layer 11 is a piezoelectric substrate 11b with a piezoelectric Film 11a, a groove structure may be disposed on a surface of the piezoelectric substrate 11b facing the piezoelectric Film 11a, and the adjusting component 12 may be located in the groove structure, that is, the adjusting component 12 may be disposed between the piezoelectric Film 11a and the piezoelectric substrate 11b and embedded in the groove of the piezoelectric substrate 11b, so as to implement adjustment of parameters and performance of the surface acoustic wave resonator while having a stable mechanical structure, and such a scheme is currently found in the design practice of TF-SAW (Thin Film-SAW).
Wherein the orthographic projection of the groove structure on the piezoelectric substrate 11b covers at least the orthographic projection of the electrode structure 13 on the piezoelectric substrate 11 b.
Optionally, in another embodiment of the present invention, referring to fig. 7, fig. 7 is a schematic partial structure of another surface acoustic wave resonator provided in the embodiment of the present invention, referring to fig. 8, fig. 8 is a schematic partial structure of another surface acoustic wave resonator provided in the embodiment of the present invention, referring to fig. 9, fig. 9 is a schematic partial structure of another surface acoustic wave resonator provided in the embodiment of the present invention, the adjusting component 12 includes N sub-film layers 15, where N is greater than or equal to 2 and N is a positive integer, and the N sub-film layers 15 are sequentially stacked in a first direction X, and the first direction X is perpendicular to a plane in which the piezoelectric layer 11 is located.
Specifically, in the embodiment of the present invention, compared with the structure shown in fig. 1, the difference between the two structures is that the adjusting component 12 in the structure shown in fig. 1 is a single-layer film structure, whereas the adjusting component 12 in the structure shown in fig. 7 is a multi-layer laminated film structure, and the materials of the N sub-film layers 15 are different from each other based on the adjusting component 12 in the structure shown in fig. 7.
Similarly, the difference between the structure shown in fig. 8 and the structure shown in fig. 2 is that the adjusting member 12 in the structure shown in fig. 2 is a single-layer film structure, whereas the adjusting member 12 in the structure shown in fig. 8 is a multi-layer laminated film structure, and the materials of the N sub-film layers 15 are different from each other based on the adjusting member 12 in the structure shown in fig. 8.
Similarly, the difference between the structure shown in fig. 9 and the structure shown in fig. 3 is that the adjusting member 12 in the structure shown in fig. 3 is a single-layer film structure, whereas the adjusting member 12 in the structure shown in fig. 9 is a multi-layer laminated film structure, and the materials of the N sub-film layers 15 are different from each other based on the adjusting member 12 in the structure shown in fig. 9.
In general, when the tuning member 12 is a multi-layered laminated film structure, the N sub-films 15 are formed of different materials, and the propagation of acoustic waves at the interface between the different material films will change in characteristics, thereby changing the performance and parameters.
It should be noted that the thicknesses of different sub-film layers in the N-layer sub-film layer 15 may be different, and only the overall thickness of the N-layer sub-film layer 15 is required to be less than 500 nm.
It should be further noted that, in fig. 7 to fig. 9, n=3 is merely taken as an example, that is, the adjusting component 12 includes three sub-film layers, and the selection of the N value may be determined according to practical situations.
Alternatively, in another embodiment of the present invention, referring to fig. 10, fig. 10 is a schematic view of a part of a surface acoustic wave resonator according to another embodiment of the present invention, when the adjusting component 12 includes N sub-film layers 15, at least one sub-film layer is located on a first surface of the piezoelectric layer 11, at least one sub-film layer is located on a second surface of the piezoelectric layer 11, and fig. 10 illustrates that the N sub-film layer 15 includes a first sub-film layer 15a and a second sub-film layer 15b, where the first sub-film layer 15a is located on the first surface of the piezoelectric layer 11, and the second sub-film layer 15b is located on the second surface of the piezoelectric layer 11.
That is, when the adjusting member 12 is a laminated structure of multiple layers, the multiple sub-layers are not necessarily all located on the same side surface of the piezoelectric layer 11, and the distribution positions of the sub-layers can be reasonably designed according to actual requirements.
It should be noted that, in fig. 10, n=2 is merely taken as an example, that is, the adjusting component 12 includes two sub-film layers, and the N value may be selected according to practical situations.
Alternatively, in another embodiment of the present invention, referring to fig. 11, fig. 11 is a schematic view of a part of a surface acoustic wave resonator according to another embodiment of the present invention, when the adjusting component 12 includes N sub-film layers 15, a front projection of at least one sub-film layer on the piezoelectric layer 11 completely covers a first surface or a second surface of the piezoelectric layer 11, a front projection of at least one sub-film layer on the piezoelectric layer 11 completely covers a front projection of the electrode structure 13 on the piezoelectric layer 11, and fig. 11 illustrates that the N sub-film layer 15 includes a third sub-film layer 15c and a fourth sub-film layer 15d, where the front projection of the third sub-film layer 15c on the piezoelectric layer 11 completely covers the first surface of the piezoelectric layer 11, and the front projection of the fourth sub-film layer 15d on the piezoelectric layer 11 completely covers the front projection of the electrode structure 13 on the piezoelectric layer 11.
That is, when the conditioning component 12 is a multi-layered laminate film structure, the multi-layered sub-film may be partially patterned.
It should be noted that, in fig. 11, n=2 is merely taken as an example, that is, the adjusting component 12 includes two sub-film layers, and the N value may be selected according to practical situations.
In fig. 11, the front projection of the third sub-film layer 15c on the piezoelectric layer 11 is taken as an example to cover the first surface of the piezoelectric layer 11 completely.
Meanwhile, the scheme shown in fig. 10 and the scheme shown in fig. 11 may be combined, and the structural design of the specific surface acoustic wave resonator may be selected reasonably according to the structure disclosed in the embodiment of the present invention.
Further, based on the structure shown in fig. 10 and 11, when the regulating member 12 is a film layer structure in which a plurality of film layers are stacked, the materials of the plurality of sub-film layers may be the same or different, and when the sub-film layers are stacked adjacently, the materials should be different.
Optionally, in another embodiment of the present invention, referring to fig. 12, fig. 12 is a schematic view of a part of a structure of a surface acoustic wave resonator according to another embodiment of the present invention, the adjusting member 12 is located on a first surface of the piezoelectric layer 11, the adjusting member 12 is a dielectric layer 16, the dielectric layer 16 is located between the electrode structure 13 and the piezoelectric layer 11, and an orthographic projection of the dielectric layer 16 on the piezoelectric layer 11 and an orthographic projection of the electrode structure 13 on the piezoelectric layer 11 completely overlap.
Specifically, in this embodiment, the combination of the adjustment member 12 and the electrode structure 13 may be implemented by using the same semiconductor process, that is, in the case that the front projection of the dielectric layer 16 on the piezoelectric layer 11 and the front projection of the electrode structure 13 on the piezoelectric layer 11 are completely overlapped, it is obvious that the dielectric layer 16 and the electrode structure 13 may be formed separately in the same semiconductor process through the same mask, for example, after patterning with photoresist, the dielectric layer 16 is formed first and then the electrode structure 13 is formed in a manner including, but not limited to, using electron beam evaporation or magnetron sputtering, which is completely compatible with the current process method, so as to achieve the purpose of simplifying the process flow and reducing the manufacturing cost.
Although the structural features of this solution are the same as those of the structure shown in fig. 3, the adjusting component 12 is used as the underlying dielectric layer 16 of the electrode structure 13, which can be considered as a part of the electrode structure 13 in terms of structure, that is, the conventional electrode structure is improved to be divided into two parts, one part continues to serve as the electrode structure 13, and the other part forms the adjusting structure 12 of the dielectric layer 16, and the corresponding material is selected based on different application requirements to form the dielectric layer 16 with a corresponding thickness so as to adjust the resonant frequency and the electromechanical coupling coefficient of the surface acoustic wave resonator, so that the performance of the surface acoustic wave resonator can be adjusted to meet different application scenarios.
In the case where the front projection of the dielectric layer 16 on the piezoelectric layer 11 completely covers the front projection of the electrode structure 13 on the piezoelectric layer 11, the front projection area of the dielectric layer 16 on the piezoelectric layer 11 may be larger than the front projection area of the electrode structure 13 on the piezoelectric layer 11, and two masks are required to form the dielectric layer 16 and the electrode structure 13 respectively.
Alternatively, in another embodiment of the present invention, the material of the dielectric layer 16 includes, but is not limited to, si material, siC material, diamond material, sapphire materialMaterial, LT material, LN material, znO material, gaN material, ga 2 O 3 Material, piezoelectric material, poly-Si material, siO 2 Material, si 3 N 4 A material, siC material, gaN material, or the like, wherein the piezoelectric material includes, but is not limited to, an LN material, LT material, alN material, znO material, or the like.
Alternatively, in another embodiment of the present invention, the thickness of the dielectric layer 16 is less than 500nm in a direction perpendicular to the plane of the piezoelectric layer, and the thickness of the dielectric layer 16 is less than the thickness of the electrode structure 13.
Optionally, in another embodiment of the present invention, referring to fig. 13, fig. 13 is a schematic diagram of a part of a structure of a surface acoustic wave resonator according to another embodiment of the present invention, the dielectric layer 16 may also be a single-layer film structure, or a multi-layer laminated film structure, as shown in fig. 13, the dielectric layer 16 may include M sub-film layers 17, where M is greater than or equal to 2 and M is a positive integer, and the first direction X is perpendicular to a plane of the piezoelectric layer 11.
Specifically, in this embodiment, when the dielectric layer 16 is in a film structure of the M-layer sub-film layer 17, the film materials of the M-layer sub-film layer 17 are different from each other, and at this time, when the acoustic wave propagates, the propagation of the acoustic wave at the interface of the film layers of different materials will change in characteristics, thereby bringing about changes in performance and parameters.
It should be noted that the thicknesses of different sub-film layers in the M-layer sub-film layer 17 may be different, and only the overall thickness of the M-layer sub-film layer 17 needs to be ensured to be less than 500nm, and the overall thickness of the M-layer sub-film layer 17 needs to be ensured to be less than the thickness of the electrode structure 13.
Based on the foregoing embodiments of the present invention, in another embodiment of the present invention, a method for manufacturing a surface acoustic wave resonator is further provided, and referring to fig. 14, fig. 14 is a schematic flow chart of a method for manufacturing a surface acoustic wave resonator according to an embodiment of the present invention, and is described with reference to fig. 15 to fig. 24, where the method for manufacturing a surface acoustic wave resonator according to an embodiment of the present invention includes:
s101: a piezoelectric layer 11 is provided, the piezoelectric layer 11 having oppositely disposed first and second surfaces.
Specifically, in this step, the piezoelectric layer 11 may be a piezoelectric film or a piezoelectric substrate with a piezoelectric film, and specific materials thereof are described in the above embodiments, which are not described herein.
S102: an adjustment member 12 is formed on one side of the first surface or on one side of the second surface, and the adjustment member 12 is in contact with the piezoelectric layer 11.
S103: an electrode structure 13 is formed on one side of the first surface, wherein the orthographic projection of the adjustment member 12 onto the piezoelectric layer 11 covers at least the orthographic projection of the electrode structure 13 onto the piezoelectric layer 11.
Specifically, in this embodiment, when the adjusting member 12 is a first film layer, the first film layer completely covers the surface of the piezoelectric layer 11, and one implementation manner of step S102 is:
as shown in fig. 16, a first film layer is formed on one side of the first surface or the second surface, and the first film layer completely covers the first surface or the second surface of the piezoelectric layer 11.
In fig. 16, the first film layer having one entire surface is formed on one side of the first surface, and the process is the same as that when the first film layer having one entire surface is formed on one side of the second surface.
When the adjustment member 12 is the patterned film 14, one implementation of step S102 is:
forming a first patterned mask 18 on one side of the first surface or the second surface as shown in fig. 17, forming a patterned film layer 14 based on the first patterned mask 18 as shown in fig. 18, and removing the first patterned mask 18 as shown in fig. 19; the first patterned mask 18 has a first hollow region 19, and the front projection of the first hollow region 19 on the piezoelectric layer 11 at least covers the front projection of the electrode structure 13 on the piezoelectric layer 11.
In fig. 17 to 19, the patterned film layer 14 is formed on the first surface side, and the process is the same when the patterned film layer 14 is formed on the second surface side.
Further, based on the scheme that the adjusting member 12 is an entire first film layer or patterned film layer 14, one implementation manner of step S103 is as follows:
forming a second patterned mask 20 on one side of the first surface as shown in fig. 20, forming an electrode structure 13 based on the second patterned mask 20 as shown in fig. 21, and removing the second patterned mask 20 as shown in fig. 1; the second patterned mask 20 has a second hollow region 21, and the front projection of the adjusting element 12 onto the piezoelectric layer 11 at least completely covers the front projection of the second hollow region 21 onto the piezoelectric layer 11.
The method for forming the electrode structure 13 in the above embodiment includes, but is not limited to, vacuum electron beam evaporation or magnetron sputtering PVD.
Alternatively, in another embodiment of the present invention, when the adjusting component 12 is the dielectric layer 16, one implementation manner of step S102 is as follows:
forming a third patterned mask 22 on one side of the first surface as shown in fig. 22, and forming a dielectric layer 16 based on the third patterned mask 22 as shown in fig. 23; the third patterned mask 22 has a third hollow region 23, and the orthographic projection of the third hollow region 23 on the piezoelectric layer 11 completely overlaps with the orthographic projection of the electrode structure 13 on the piezoelectric layer 11.
One implementation of step S103 at this time is as follows:
electrode structures 13 are formed on the side of the dielectric layer 16 facing away from the piezoelectric layer 11, as shown in fig. 24, based on the third patterned mask 22, and the third patterned mask 22 is removed, as shown in fig. 12.
When the regulating member 12 has a multi-layered structure, more layers may be formed repeatedly in the corresponding steps.
The method of forming the dielectric layer 16 in the above embodiment includes, but is not limited to, a method such as electron beam deposition or magnetron sputtering, and the method of forming the electrode structure 13 includes, but is not limited to, a method such as electron beam deposition or magnetron sputtering.
It should be noted that the first patterned mask 18, the second patterned mask 20, and the third patterned mask 22 include, but are not limited to, masks formed by photoresist.
The following describes the effects of the technical solution of the present application by means of three specific embodiments:
first embodiment:
the wavelength of the surface acoustic wave resonator is kept to 2um, the material of the electrode structure 13 is an Al material, the thickness of the electrode structure 13 is 160nm, the piezoelectric layer 11 is a piezoelectric film, the piezoelectric layer 11 is a single-layer LT film, the thickness of the piezoelectric layer 11 is 250nm, an adjusting component 12 with the thickness t is formed on the second surface of the piezoelectric layer 11, the material of the adjusting component 12 is an Si material, and referring to FIG. 25, FIG. 25 is a schematic diagram of a simulation curve of the surface acoustic wave resonator provided by the embodiment of the application, therefore, the adjusting component 12 with the thickness t is arranged on the second surface of the piezoelectric layer 11, the resonant frequency of the surface acoustic wave resonator can be effectively improved, and along with the increase of the thickness t, the resonant frequency is higher; the electromechanical coupling coefficient decreases with increasing thickness t.
Specific embodiment II:
the wavelength of the surface acoustic wave resonator is kept to 2um, the material of the electrode structure 13 is an Al material, the thickness of the electrode structure 13 is 160nm, the piezoelectric layer 11 is a piezoelectric film, the piezoelectric layer 11 is a single-layer LT film, the thickness of the piezoelectric layer 11 is 250nm, the second surface of the piezoelectric layer 11 is provided with an adjusting component 12 with a thickness t, the material of the adjusting component 12 is an LN material, referring to fig. 26, fig. 26 is a schematic diagram of a simulation curve of another surface acoustic wave resonator provided by the embodiment of the present invention, and when the wavelength and other parameters of the surface acoustic wave resonator are fixed, the resonant frequency of the surface acoustic wave resonator can be effectively improved by the adjusting component 12, and the thicker the thickness t of the adjusting component 12 of the LN material is, the more obvious the resonant frequency improving effect is.
Wherein when the thickness t of the LN material of the tuning element 12 is 300nm or less, the electromechanical coupling coefficient (k 2 ) Presenting an ascending trend; and the resonance peak of the SAW resonator is sharp, indicating the adjusting part with Si materialThe device energy constraint using piezoelectric film tuning is better and the Q is higher than for member 12.
Third embodiment:
the wavelength of the surface acoustic wave resonator is kept to 2um, the materials of the electrode structure 13 are all Al materials, the thickness of the electrode structure 13 is 160nm, the piezoelectric layer 11 is a piezoelectric substrate and is a single-layer LT film, the thickness of the piezoelectric layer 11 is 250nm, and the dielectric layers 16 for comparison are respectively a dielectric layer of LN material, a dielectric layer of AlN material and SiO 2 The thicknesses of the dielectric layer of the material and the dielectric layer of the SiC material are 100nm, and referring to fig. 27, fig. 27 is a schematic diagram of a simulation curve of another surface acoustic wave resonator according to an embodiment of the present invention, so that it can be seen that by adding the dielectric layer 16 for priming to the electrode structure 13, the electromechanical coupling coefficient of the surface acoustic wave resonator can be effectively adjusted, and no adverse effects such as clutter are brought.
In which dielectric layers of non-piezoelectric material, e.g. SiO 2 The dielectric layer of the material, the dielectric layer of the SiC material and the like can greatly reduce the electromechanical coupling coefficient, and are suitable for forming 5G frequency band designs with smaller bandwidth.
In fig. 27, the electromechanical coupling coefficient of the surface acoustic wave resonator is specially indicated.
Optionally, according to the foregoing embodiment of the present invention, in another embodiment of the present invention, there is further provided a filter, which includes the surface acoustic wave resonator described in the foregoing embodiment.
The filter has the same effect as the surface acoustic wave resonator in the above embodiment.
The above description of the surface acoustic wave resonator, the preparation method thereof and the filter provided by the invention applies specific examples to illustrate the principle and the implementation of the invention, and the above examples are only used for helping to understand the method and the core idea of the invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
It should be noted that, in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described as different from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
It is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include, or is intended to include, elements inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (21)
1. A surface acoustic wave resonator, characterized in that the surface acoustic wave resonator comprises:
a piezoelectric layer having oppositely disposed first and second surfaces;
an adjustment member located on the first surface side or the second surface side, and the adjustment member is in contact with the piezoelectric layer;
and the front projection of the regulating component on the piezoelectric layer at least covers the front projection of the electrode structure on the piezoelectric layer.
2. The surface acoustic wave resonator according to claim 1, characterized in that the material of the tuning element is a piezoelectric material, a poly-Si material, a SiO 2 Material, si 3 N 4 A material, a SiC material or a GaN material.
3. The surface acoustic wave resonator according to claim 1, characterized in that the thickness of the tuning element is less than 500nm in a direction perpendicular to the plane of the piezoelectric layer.
4. The surface acoustic wave resonator according to claim 1, characterized in that the tuning component is a first film layer, the front projection of which onto the piezoelectric layer completely covers the first surface or the second surface.
5. The surface acoustic wave resonator according to claim 1, characterized in that the tuning component is a patterned membrane layer;
the front projection of the patterned film layer on the piezoelectric layer at least covers the front projection of the electrode structure on the piezoelectric layer.
6. The surface acoustic wave resonator according to claim 1, characterized in that the piezoelectric layer is a piezoelectric film, a piezoelectric substrate or a piezoelectric substrate with a piezoelectric film.
7. The surface acoustic wave resonator according to claim 6, characterized in that when the piezoelectric layer is a piezoelectric substrate having a piezoelectric thin film, a side surface of the piezoelectric substrate facing the piezoelectric thin film is provided with a groove structure, and an orthographic projection of the groove structure on the piezoelectric substrate covers at least an orthographic projection of the electrode structure on the piezoelectric substrate;
Wherein the adjusting part is embedded and arranged in the groove structure.
8. The surface acoustic wave resonator according to claim 1, wherein the adjusting member comprises N sub-film layers, the N sub-film layers being sequentially stacked in a first direction X, wherein N is equal to or greater than 2, N is a positive integer, and the first direction is perpendicular to a plane in which the piezoelectric layer is located.
9. The saw resonator of claim 8, wherein at least one of the N sub-film layers is located on a first surface of the piezoelectric layer and at least one sub-film layer is located on a second surface of the piezoelectric layer.
10. The saw resonator of claim 8 or 9, wherein the front projection of at least one of the N sub-film layers onto the piezoelectric layer completely covers the first or second surface of the piezoelectric layer, and the front projection of at least one sub-film layer onto the piezoelectric layer completely covers the front projection of the electrode structure onto the piezoelectric layer.
11. The saw resonator of claim 1, wherein the tuning element is located on the first surface of the piezoelectric layer, the tuning element being a dielectric layer, the dielectric layer being located between the electrode structure and the piezoelectric layer, an orthographic projection of the dielectric layer onto the piezoelectric layer fully overlapping an orthographic projection of the electrode structure onto the piezoelectric layer.
12. The surface acoustic wave resonator according to claim 11, characterized in that the thickness of the dielectric layer is smaller than 500nm and the thickness of the dielectric layer is smaller than the thickness of the electrode structure in a direction perpendicular to the plane of the piezoelectric layer.
13. The surface acoustic wave resonator according to claim 11, wherein the dielectric layer comprises M sub-film layers, the M sub-film layers are sequentially stacked in a first direction, wherein M is greater than or equal to 2, M is a positive integer, and the first direction is perpendicular to a plane in which the piezoelectric layer is located.
14. The surface acoustic wave resonator according to claim 11, wherein the dielectric layer is made of Si material, siC material, diamond material, sapphire material, LT material, LN material, znO material, gaN material, ga 2 O 3 Material, piezoelectric material, poly-Si material, siO 2 Material, si 3 N 4 A material, a SiC material or a GaN material.
15. A method of manufacturing a surface acoustic wave resonator, the method comprising:
providing a piezoelectric layer, wherein the piezoelectric layer is provided with a first surface and a second surface which are oppositely arranged;
forming an adjustment member on one side of the first surface or one side of the second surface, and the adjustment member being in contact with the piezoelectric layer;
An electrode structure is formed on one side of the first surface, wherein an orthographic projection of the adjustment member onto the piezoelectric layer covers at least an orthographic projection of the electrode structure onto the piezoelectric layer.
16. The method of manufacturing according to claim 15, wherein the adjustment member is a first film layer whose orthographic projection onto the piezoelectric layer completely covers the first surface or the second surface, the forming the adjustment member on one side of the first surface or one side of the second surface, comprising:
and forming a first film layer on one side of the first surface or the second surface, wherein the first film layer completely covers the first surface or the second surface of the piezoelectric layer.
17. The method of manufacturing according to claim 15, wherein the conditioning component is a patterned film layer; wherein, the orthographic projection of the patterning film layer on the piezoelectric layer at least covers the orthographic projection of the electrode structure on the piezoelectric layer, the adjusting component is formed on one side of the first surface or one side of the second surface, and the method comprises the following steps:
forming a first graphical mask on one side of the first surface or the second surface, wherein the first graphical mask is provided with a first hollowed-out area, and the orthographic projection of the first hollowed-out area on the piezoelectric layer at least covers the orthographic projection of the electrode structure on the piezoelectric layer;
Forming the patterned film layer based on the first patterned mask;
and removing the first patterned mask.
18. The method of any one of claims 15-17, wherein forming an electrode structure on one side of the first surface comprises:
forming a second graphical mask on one side of the first surface, wherein the second graphical mask is provided with a second hollowed-out area, and the orthographic projection of the adjusting part on the piezoelectric layer at least completely covers the orthographic projection of the second hollowed-out area on the piezoelectric layer;
forming the electrode structure based on the second patterned mask;
and removing the second patterned mask.
19. The method of manufacturing according to claim 15, wherein the adjustment member is located on a first surface of the piezoelectric layer, the adjustment member is a dielectric layer, the dielectric layer is located between the electrode structure and the piezoelectric layer, an orthographic projection of the dielectric layer on the piezoelectric layer and an orthographic projection of the electrode structure on the piezoelectric layer are completely overlapped, the adjustment member is formed on one side of the first surface or one side of the second surface, and the method comprises:
Forming a third graphical mask on one side of the first surface, wherein the third graphical mask is provided with a third hollowed-out area, and the orthographic projection of the third hollowed-out area on the piezoelectric layer is completely overlapped with the orthographic projection of the electrode structure on the piezoelectric layer;
and forming the dielectric layer based on the third patterned mask.
20. The method of claim 19, wherein forming an electrode structure on one side of the first surface comprises:
forming the electrode structure on one side of the dielectric layer, which is away from the piezoelectric layer, based on the third patterned mask;
and removing the third patterned mask.
21. A filter comprising the surface acoustic wave resonator of any one of claims 1-14.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310967069.0A CN116827304A (en) | 2023-08-02 | 2023-08-02 | Surface acoustic wave resonator, preparation method thereof and filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310967069.0A CN116827304A (en) | 2023-08-02 | 2023-08-02 | Surface acoustic wave resonator, preparation method thereof and filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116827304A true CN116827304A (en) | 2023-09-29 |
Family
ID=88118589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310967069.0A Pending CN116827304A (en) | 2023-08-02 | 2023-08-02 | Surface acoustic wave resonator, preparation method thereof and filter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116827304A (en) |
-
2023
- 2023-08-02 CN CN202310967069.0A patent/CN116827304A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11894833B2 (en) | Bulk acoustic wave resonator | |
| JP4318653B2 (en) | Bulk acoustic wave filter and method for removing unwanted sideband passband | |
| CN107317560B (en) | Temperature compensation surface acoustic wave device and preparation method thereof | |
| US6107721A (en) | Piezoelectric resonators on a differentially offset reflector | |
| US10038422B2 (en) | Single-chip multi-frequency film bulk acoustic-wave resonators | |
| US5894647A (en) | Method for fabricating piezoelectric resonators and product | |
| US7425788B2 (en) | Surface acoustic wave device | |
| US7888841B2 (en) | Boundary acoustic wave device | |
| US20110121916A1 (en) | Hybrid bulk acoustic wave resonator | |
| KR100954688B1 (en) | Acoustic wave device and method for fabricating the same | |
| US9368712B2 (en) | Surface acoustic wave device | |
| CN115314018B (en) | Surface acoustic wave filter and preparation method thereof | |
| CN115276593A (en) | Acoustic wave resonator and filter | |
| JP2008294538A (en) | Elastic boundary wave device and manufacturing method thereof | |
| US7109637B2 (en) | Thin-film bulk acoustic oscillator and method of manufacturing same | |
| US11316495B2 (en) | Surface acoustic wave device | |
| WO2021103579A1 (en) | Thin film material surface acoustic wave device with gs layered electrode, preparation method therefor and use thereof | |
| CN116827304A (en) | Surface acoustic wave resonator, preparation method thereof and filter | |
| CN114759899A (en) | Low-insertion-loss acoustic wave band-pass filter and implementation method thereof | |
| CN114629461A (en) | Acoustic surface wave resonator | |
| KR100323802B1 (en) | Method of fabrication acoustic wave device and acoustic wave device using the same | |
| JP4693407B2 (en) | Piezoelectric thin film device and manufacturing method thereof | |
| JP2004235886A (en) | Piezoelectric thin film element | |
| JP4693406B2 (en) | Piezoelectric thin film device and manufacturing method thereof | |
| JP2008187296A (en) | Baw resonator, and filter for uwb |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |