CN116826496B - Infrared seed light source and laser system - Google Patents
Infrared seed light source and laser system Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
- H01S3/094011—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre with bidirectional pumping, i.e. with injection of the pump light from both two ends of the fibre
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06791—Fibre ring lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
Abstract
The invention relates to the technical field of photoetching laser, and discloses an infrared seed light source and a laser system, wherein the infrared seed light source comprises: the system comprises a first pump source, a second pump source, a first wavelength division multiplexer, a gain optical fiber, a second wavelength division multiplexer and an optical fiber coupler; the laser output by the first pumping source enters the gain fiber from one end of the gain fiber to provide pumping energy for the gain fiber; the laser output by the second pumping source enters the gain fiber from the other end of the gain fiber to provide pumping energy for the gain fiber; the gain fiber generates first infrared laser under the excitation of pumping energy, and the first infrared laser is amplified in the ring resonant cavity in an oscillating way and is output through the fiber coupler. The invention adopts a bidirectional pumping mode, and can enable the gain fiber exceeding the optimal length to absorb the pumping light to participate in the laser oscillation amplification in the ring resonant cavity by adjusting the power of the first pumping source and the second pumping source, thereby realizing high-power laser output.
Description
Technical Field
The invention relates to the technical field of lithography laser, in particular to an infrared seed light source and a laser system.
Background
With the continuous development of integrated circuit manufacturing technology, photolithography, one of the most important core technologies, is also put forth higher performance requirements. Wherein the characteristic dimension of the IC chip is used as an important parameter and is used as a light source wave for a photoetching machineThe length is closely related. From the Rayleigh criterion, the shorter the light source wavelength is, the smaller the feature size of chip processing is. The photoetching machine light source has undergone five generations of development of g-line (438 nm), i-line (365 nm), krF (248 nm), arF (193 nm) and EUV (13.5 nm), wherein the ArF excimer laser is the most widely applied light source in the photoetching machine due to the advantages of high power, narrow linewidth, short wavelength, high efficiency and the like. Compared with the traditional projection type photoetching technology adopting an illumination system and combining with complex projection objective imaging, the holographic photoetching technology for realizing photoetching by utilizing the diffraction and interference principles of coherent light has the advantages that the illumination system is relatively simple and does not need complex projection objective. Holographic lithography requires higher coherence of the laser, i.e. a laser with narrow linewidth and high beam quality M 2 Is excellent in performance, narrow linewidth corresponds to laser time coherence, and high in beam quality M 2 Spatial coherence of the corresponding laser; in addition, the power of the laser source affects the yield of the lithography machine, so the holographic lithography technology provides high power, narrow linewidth and high beam quality M for the laser source 2 Is required by the parameters of the system.
Compared with an ArF excimer laser, the solid 193nm wave band laser source can also provide deep ultraviolet laser with narrow linewidth smaller than 1pm, and the laser beam quality is better and is more suitable for holographic lithography. However, the output power of the solid 193nm laser source is low, mainly because the generation process of the 193nm solid source depends on nonlinear optical frequency conversion of crystals, so that the 193nm laser with high beam quality output by the solid laser can be used as seed light and then power amplification can be performed in the ArF excimer laser to obtain laser with high power, high beam quality and narrow linewidth. In the technical route for obtaining the 193nm solid laser, the output laser of the fundamental frequency light source is mainly obtained by utilizing various nonlinear crystals to carry out frequency multiplication or sum frequency, but the conversion efficiency of nonlinear optical frequency conversion is lower, and the frequency multiplication and sum frequency are needed to be carried out for a plurality of times in order to obtain the 193nm band laser, so that the output power of the fundamental frequency light source is required to be improved, and the finally output solid 193nm laser is required to be improved as much as possible.
Currently, erbium-doped fiber lasers in 1550nm bands are commonly used as infrared seed light sources for sum frequency output 193nm lasers. In the process that the erbium-doped fiber is used as a gain medium to absorb the pump light energy to realize light amplification, the erbium-doped fiber has an optimal length, the residual gain fiber exceeding the optimal length does not absorb the pump energy to cause insufficient pump energy absorption, and the residual pump light is converted into heat in the laser to increase the heat dissipation difficulty of the laser, so that the laser energy conversion efficiency is lower.
Disclosure of Invention
In view of this, the invention provides an infrared seed light source and a laser system, which can overcome the technical problems in the prior art that the residual pump light is converted into heat in the laser to increase the heat dissipation difficulty of the laser and lower laser energy conversion efficiency because the residual gain fiber exceeding the optimal length does not absorb pump energy to cause insufficient absorption of pump energy.
A first aspect of the present invention provides an infrared seed light source comprising: the device comprises a first pump source, a second pump source and a ring resonant cavity, wherein the ring resonant cavity comprises a first wavelength division multiplexer, a gain optical fiber, a second wavelength division multiplexer and an optical fiber coupler which are sequentially connected and form a ring loop; the laser output by the first pumping source enters the gain fiber from one end of the gain fiber through the first wavelength division multiplexer to provide pumping energy for the gain fiber; the laser output by the second pumping source enters the gain fiber from the other end of the gain fiber through the second wavelength division multiplexer to provide pumping energy for the gain fiber; the gain fiber generates first infrared laser under the excitation of the pumping energy provided by the first pumping source and the pumping energy provided by the second pumping source, and the first infrared laser is amplified in the ring resonant cavity in an oscillating way and is output through the fiber coupler.
Optionally, the ring resonator further comprises a filter, the filter being disposed between the second wavelength division multiplexer and the fiber coupler.
Optionally, the infrared seed light source further comprises: the device comprises a first spectroscope, a first laser power detector, a first collimation system, a second spectroscope, a second laser power detector and a second collimation system; the first spectroscope is arranged at an output port of the first pumping source and is used for dividing laser output by the first pumping source into two parts, one part enters the first wavelength division multiplexer through the first collimation system, the other part enters the first laser power detector, and the first laser power detector is used for measuring the power of the laser output by the first pumping source; the second beam splitter is arranged at an output port of the second pump source and is used for dividing laser output by the second pump source into two parts, one part of the laser enters the second wavelength division multiplexer through the second collimation system, the other part of the laser enters the second laser power detector, and the second laser power detector is used for measuring the power of the laser output by the second pump source.
Optionally, the first collimating system includes a first lens and a second lens, where the first lens and the second lens are sequentially disposed on an optical path after the laser output by the first pump source passes through the first spectroscope; the second collimating system comprises a third lens and a fourth lens, and the third lens and the fourth lens are sequentially arranged on an optical path after laser output by the second pumping source passes through the second beam splitter.
Optionally, the gain fiber comprises one, two or more sections of erbium doped fiber.
The second aspect of the invention provides a laser system, which comprises a first infrared seed light source, a second infrared seed light source, a nonlinear conversion module, a third spectroscope, a third laser power detector and a laser control part, wherein the first infrared seed light source adopts the infrared seed light source in the first aspect of the invention; the nonlinear conversion module is used for converting the first infrared laser output by the first infrared seed light source and the second infrared laser output by the second infrared seed light source into deep ultraviolet laser; the third spectroscope is used for dividing the deep ultraviolet laser into two parts, one part is used as output laser, and the other part is transmitted to the third laser power detector; the third laser power detector is used for measuring the real-time power of the deep ultraviolet laser and sending the measured real-time power to the laser control part; the laser control part is used for adjusting the power of the first infrared laser output by the first infrared seed light source according to the real-time power of the deep ultraviolet laser and the set target output power.
Optionally, the nonlinear conversion module comprises a first frequency multiplication crystal, a second frequency multiplication crystal, a first sum frequency crystal and a second sum frequency crystal; the second infrared laser output by the second infrared seed light source sequentially passes through the first frequency doubling crystal and the second frequency doubling crystal to be subjected to frequency doubling and then enters the first frequency summation crystal, the first infrared laser output by the first infrared seed light source enters the first frequency summation crystal and the second infrared laser after frequency doubling to be subjected to frequency summation and generate frequency summation laser, and the frequency summation laser and the rest of the first infrared laser enter the second frequency summation crystal together to be subjected to frequency summation and then output deep ultraviolet laser; the laser system further comprises a laser pulse time sequence control part, wherein the laser pulse time sequence control part is used for controlling the laser output by the first infrared seed light source and the laser output by the second infrared seed light source after twice frequency multiplication to reach the first sum frequency crystal at the same time.
Optionally, the laser system further includes a first mirror and a second mirror, where the first mirror is disposed at an output end of the second sum frequency crystal, and is configured to transmit the deep ultraviolet laser to the second mirror, and the second mirror is configured to transmit the deep ultraviolet laser to the third spectroscope.
Optionally, the laser system further comprises a fourth spectroscope, a fourth laser power detector, a fifth spectroscope and a fifth laser power detector; the fourth spectroscope is arranged at the output end of the first infrared seed light source and is used for dividing the first infrared laser into two parts, one part enters the fourth laser power detector, and the other part enters the first sum frequency crystal; the fifth spectroscope is arranged at the output end of the second infrared seed light source and is used for dividing the second infrared laser into two parts, one part enters the fifth laser power detector, and the other part enters the first frequency doubling crystal; the fourth laser power detector is used for measuring the power of the first infrared laser and sending the measured value to the laser control part; the fifth laser power detector is configured to measure the power of the second infrared laser and send the measured value to the laser control section.
Optionally, the nonlinear conversion module further includes a first rotating table, a second rotating table, a third rotating table and a fourth rotating table, where the first rotating table, the second rotating table, the third rotating table and the fourth rotating table are respectively used for adjusting angles of laser entering the first frequency doubling crystal, the second frequency doubling crystal, the first frequency summation crystal and the second frequency summation crystal.
The infrared seed light source and the laser system have at least the following beneficial effects:
the infrared seed light source adopts a bidirectional pumping mode, pump energy output by the first pump source and the second pump source respectively enters the gain fiber from two ends of the gain fiber and pumps the gain fiber, and even if the gain fiber can not absorb the pump energy after exceeding the optimal length in one direction, the gain fiber can also absorb the pump energy provided in the other direction, so that the gain fiber exceeding the optimal length can also absorb the pump light to participate in laser oscillation amplification in the ring resonant cavity. By adjusting the power of the first pumping source and the second pumping source, the gain optical fiber with the length exceeding the optimal length can absorb the pumping light to participate in the laser oscillation amplification in the annular resonant cavity, so that high-power laser output is realized, and meanwhile, the heat dissipation difficulty of the laser is increased by avoiding the conversion of residual pumping light into heat in the laser.
According to the laser system, the third laser power detector is used for measuring the real-time power of the deep ultraviolet laser and sending the measured real-time power to the laser control part, and the laser control part is used for adjusting the power of the first infrared laser output by the first infrared seed light source according to the real-time power of the deep ultraviolet laser and the set target output power, so that the power of the output deep ultraviolet laser reaches the set target output power, and the real-time adjustment of the power of the deep ultraviolet laser is realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an infrared seed light source according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of another infrared seed light source according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of another embodiment of an infrared seed light source;
FIG. 4 is a schematic diagram of a laser system according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of another laser system according to an embodiment of the present invention;
fig. 6 is a control flow chart of the laser power control section according to the embodiment of the present invention;
reference numerals illustrate:
1-a first pump source; 2-a second pump source; 3-a first wavelength division multiplexer; 4-a second wavelength division multiplexer; 5-a first erbium-doped fiber; 6-a second erbium-doped fiber; 7-an optical fiber coupler; 8-a first infrared seed light source; 9-a second infrared seed light source; 10-a fifth spectroscope; 11-a fourth spectroscope; 12-a first frequency doubling crystal; 13-a second frequency doubling crystal; 14-a first sum frequency crystal; 15-a second sum frequency crystal; 16-a first mirror; 17-a nonlinear conversion module; 18-a second mirror; 19-a third spectroscope; 20-a laser control unit; 21-a fourth laser power detector; 22-a fifth laser power detector; 23-a third laser power detector; 24-a laser pulse timing control unit; 25-a first laser power detector; a second laser power detector 26; 27-a first spectroscope; 28-a second beam splitter; 29-a first lens; 30-a second lens; 31-a third lens; 32-a fourth lens; a 33-filter; 34-a first rotary table; 35-a second rotary table; 36-a third rotary table; 37-fourth rotary table.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly stated and limited otherwise, the terms "disposed," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
At present, 193nm deep ultraviolet laser is the most widely used light source in a photoetching machine, the 193nm deep ultraviolet laser can be obtained by nonlinear transformation of infrared laser with 1550nm wave band and infrared laser with 1030nm wave band, the existing mature technology can generate high-power infrared laser with 1030nm wave band, but the output power of the infrared laser with 1550nm wave band is still lower.
Based on the above, the embodiment of the invention provides an infrared seed light source for generating high-power 1550 nm-band infrared laser.
As shown in fig. 1, an infrared seed light source provided in an embodiment of the present invention includes: the device comprises a first pump source 1, a second pump source 2 and a ring resonant cavity, wherein the ring resonant cavity comprises a first wavelength division multiplexer 3, a gain optical fiber, a second wavelength division multiplexer 4 and an optical fiber coupler 7 which are sequentially connected and form a ring loop; the laser output by the first pump source 1 enters the gain fiber from one end of the gain fiber through the first wavelength division multiplexer 3 to provide pump energy for the gain fiber; the laser output by the second pump source 2 enters the gain fiber from the other end of the gain fiber through the second wavelength division multiplexer 4 to provide pump energy for the gain fiber; the gain fiber generates a first infrared laser under the excitation of the pump energy provided by the first pump source and the pump energy provided by the second pump source 2, and the first infrared laser is amplified in oscillation in the ring resonator and output through the fiber coupler 7.
Specifically, the wavelengths of the laser output by the first pump source 1 and the second pump source 2 are 980nm or 1480nm, and pumping modes such as electric pumping, chemical pumping, optical pumping, pneumatic pumping, semiconductor pumping and the like can be adopted, and the first pump source 1 and the second pump source 2 are laser diodes with the laser wavelength of 980 nm. The pump energy output by the first pump source 1 and the second pump source 2 respectively enter the gain fiber from two ends of the gain fiber and pump the gain fiber, and even if the gain fiber can not absorb the pump energy after exceeding the optimal length in one direction, the pump energy provided in the other direction can be absorbed, so that the gain fiber exceeding the optimal length can absorb the pump light to participate in the laser oscillation amplification in the ring resonator.
The working window of the first wavelength division multiplexer 3 and the second wavelength division multiplexer 4 is 1550/980nm, pumping energy is provided for the gain optical fiber through the first wavelength division multiplexer 3 and the second wavelength division multiplexer 4, then laser oscillation amplification is formed in a ring-shaped resonant cavity formed by the first wavelength division multiplexer 3, the gain optical fiber, the second wavelength division multiplexer 4 and the optical fiber coupler 7 and is output through the optical fiber coupler 7, the output laser center wavelength is 1550nm and is marked as first infrared laser lambda 1 。
Wherein the split ratio of the fiber coupler 7 is 80:20, i.e. 20% of the light output, the remaining light continues to oscillate amplified in the ring resonator. Of course, the spectral ratio of the fiber coupler 7 may be adjusted according to the actual situation, and may be, for example, 70:30, 90:10, or the like.
It should be understood that, in the infrared seed light source according to the embodiment of the present invention, the optical elements such as the first wavelength division multiplexer 3, the gain fiber, the second wavelength division multiplexer 4 and the optical fiber coupler 7 are connected by a common commercial single mode optical fiber and a conventional optical fiber laser connection manner, including but not limited to fusion bonding, integral manufacturing, and the like, the fiber cores of the optical elements are the same in size, and the damage threshold of each optical element is greater than the total power input into the ring resonator by the first pump source 1 and the second pump source 2.
The infrared seed light source provided by the embodiment of the invention adopts a bidirectional pumping mode, and by adjusting the power of the first pumping source 1 and the second pumping source 2, the gain fiber exceeding the optimal length can also absorb the pumping light to participate in the laser oscillation amplification in the ring resonant cavity, so that the laser output with high power is realized, and meanwhile, the heat dissipation difficulty of the laser is increased by avoiding the conversion of residual pumping light into heat in the laser.
In some embodiments, the gain fiber comprises one, two or more sections of erbium doped fiber.
Specifically, the first pump source 1 and the second pump source 2 are semiconductor lasers output by tail fibers, and the total length of the gain fiber is determined by the total power of the pump sources, the intensity of a nonlinear spectrum in an output spectrum and the absorption coefficient of the used fiber.
The gain fiber length should satisfy the following equation:
wherein,for the length of the nth gain fiber, +.>For the absorption coefficient of the nth gain fiber, Q is determined by the total power of the pump source and the intensity of the nonlinear spectrum in the output spectrum.
Therefore, the gain fiber can select one section, two sections or multiple sections according to the absorption coefficient, and in order to realize the output of 1550nm infrared laser, the gain fiber is selected from erbium-doped fiber, in particular to erbium-doped fiber with high doping concentration, high gain erbium-doped fiber drawn by adopting fiber drawing technology, double-cladding erbium-doped fiber, polarization-preserving erbium-doped fiber and the like. When n is an even number, the absorption coefficient of the gain medium gradually increases from the first section to the n/2 th section, gradually decreases from the n/2+1 th section to the n th section, and when n is an odd number, the absorption coefficient of the gain medium gradually increases from the first section to the (n+1)/2 th section, and gradually decreases from the (n+1)/2+1 th section to the n th section.
In an embodiment, the gain fiber adopts two sections of erbium-doped fiber, including the first erbium-doped fiber 5 and the second erbium-doped fiber 6 which are connected with each other, and adopts the two sections of erbium-doped fiber as the gain medium, so that nonlinear raman effect and transverse mode unstable effect caused by nonuniform heating of the fiber in the laser system can be avoided, and stable high-power laser output can be realized.
In some embodiments, as shown in fig. 2, the infrared seed light source further comprises: a first beam splitter 27, a first laser power detector 25, a first collimating system, a second beam splitter 28, a second laser power detector 26, and a second collimating system; the first spectroscope 27 is disposed at an output port of the first pump source 1, and is configured to divide the laser output by the first pump source 1 into two parts, where one part enters the first wavelength division multiplexer 3 through the first collimation system, and the other part enters the first laser power detector 25, where the first laser power detector 25 is configured to measure the power of the laser output by the first pump source 1; the second beam splitter 28 is disposed at an output port of the second pump source 2, and is configured to split the laser output by the second pump source 2 into two parts, where one part enters the second wavelength division multiplexer 4 through the second collimating system, and the other part enters the second laser power detector 26, where the second laser power detector 26 is configured to measure the power of the laser output by the second pump source 2.
Specifically, the first beam splitter 27 and the second beam splitter 28 are prism-type beam splitters or grating-type beam splitters, and in this embodiment, the first beam splitter 27 and the second beam splitter 28 each use a beam splitter prism. The first spectroscope 27 is configured at the output port of the first pump source 1, and the incidence angle is 45 degrees, so that a part of pump laser light is incident on the first laser power detector 25; the second beam splitter 28 is disposed at the output port of the second pump source 2 with an incidence angle of 45 ° so that a part of the pump laser light is incident on the second laser power detector 26.
The first collimating system and the second collimating system both function to collimate the laser light to form parallel light.
Specifically, the first collimating system includes a first lens 29 and a second lens 30, and the first lens 29 and the second lens 30 are sequentially disposed on an optical path of the laser light output from the first pump source 1 after passing through the first beam splitter 27; the second collimating system includes a third lens 31 and a fourth lens 32, and the third lens 31 and the fourth lens 32 are sequentially disposed on an optical path after the laser light output from the second pump source 2 passes through the second beam splitter 28.
After the laser beam output by the first pump source 1 passes through the first beam splitter 27, a part of the laser beam is used by the first laser power detector 25 to measure the power P of the laser beam output by the first pump source 1 3 The rest part is collimated and coupled into the first wavelength division multiplexer 3 through a first collimating system composed of a first lens 29 and a second lens 30, and after the laser output by the second pump source 2 passes through a second beam splitter 28, a part of the laser output is used by the second laser power detector 26 to measure the output laser power P of the second pump source 2 4 The rest part is collimated and coupled into a second wavelength division multiplexer 4 through a second collimating system consisting of a third lens 31 and a fourth lens 32, the first wavelength division multiplexer 3 and the second wavelength division multiplexer 4 couple output lasers of the first pump source 1 and the second pump source 2 into a ring resonant cavity to form laser oscillation amplification and output through an optical fiber coupler 7, and the output laser center wavelength is that。
The power of the laser light measured by the first laser power detector 25 and the second laser power detector 26 is sent to the corresponding control units, so that the output laser light of the first pump source 1 and the second pump source 2 is monitored in real time, and when the monitored value and the set target value are different, the output power of the first pump source 1 and the second pump source 2 is adjusted, so that the monitored value and the set target value are the same.
Specifically, both sides of the first lens 29 and the second lens 30 are coated with an antireflection dielectric film with a transmittance of 99% or more for the laser output by the first pump source 1; both sides of the third lens 31 and the fourth lens 32 are coated with an anti-reflection dielectric film with the transmittance of more than 99% for the laser output by the second pump source 2. By arranging the corresponding anti-reflection dielectric films, the laser transmittance is increased, and the laser propagation loss is reduced.
In some embodiments, as shown in fig. 3, the ring resonator further comprises a filter 33, the filter 33 being arranged between the second wavelength division multiplexer 4 and the fiber coupler 7.
Specifically, the filter 33 may be a fiber fabry perot filter 33, a sagnac filter 33, a fiber mach-zehnder interferometer, or other commercially available optically tunable filter 33. The output wavelength is made to have a certain tuning range by adding a filter 33 in the ring resonator.
To obtain high power and high beam quality M meeting holographic lithography requirements 2 The embodiment of the invention also provides a laser system which is used for the exposure process of the silicon wafer.
As shown in fig. 4, the laser system includes a first infrared seed light source 8, a second infrared seed light source 9, a nonlinear conversion module 17, a third spectroscope 19, a third laser power detector 23 and a laser control section 20, where the first infrared seed light source 8 adopts the infrared seed light source in the above embodiment of the present invention; the nonlinear conversion module 17 is used for converting the first infrared laser output by the first infrared seed light source 8 and the second infrared laser output by the second infrared seed light source 9 into deep ultraviolet laser; the third spectroscope 19 is used for dividing the deep ultraviolet laser into two parts, one part is used as output laser, and the other part is transmitted to the third laser power detector 23; the third laser power detector 23 is used for measuring the real-time power of the deep ultraviolet laser and transmitting the measured real-time power to the laser control part 20; the laser control unit 20 is configured to adjust the power of the first infrared laser beam output by the first infrared seed light source 8 according to the real-time power of the deep ultraviolet laser beam and the set target output power.
Specifically, the first infrared laser light outputted from the first infrared seed light source 8 is a high-power infrared laser light having a wavelength of 1550 nm.
The third beam splitter 19 is a prism beam splitter or a grating beam splitter, specifically, in this embodiment, the third beam splitter 19 adopts a beam splitter prism, and the incident angle of the beam splitter prism is 45 °, and the beam splitter prism is configured on the output light path of the nonlinear conversion module 17, so that a part of laser outputs to the third laser power detector 23.
The laser control unit 20 uses a control terminal such as a single-chip microcomputer, a computer, or a mobile phone, and is configured to execute various setting control logics.
The high-power infrared laser which is output by the first infrared seed light source 8 and is passed by the second infrared laser which is output by the second infrared seed light source 9 is subjected to wavelength conversion by the nonlinear conversion module 17 to output 193nm deep ultraviolet laser, and after being split by the third spectroscope 19, one part of the laser is output as laser, and the other part of the laser is detected by the third laser power detector 23 to have the power P A And fed back to the laser control part 20, the laser control part 20 compares the real-time output power P of the laser system A And a set target output power P T If P A =P T The laser system outputs 193nm laser meeting the power requirement, if P A ≠P T Then the output laser power P of the first infrared seed light source 8 is regulated 1 Make the real-time output power P A Equal to the target output power P T Thereby outputting 193nm laser meeting the power requirement.
According to the laser system provided by the embodiment of the invention, the first infrared seed light source 8 adopts a two-way pumping mode, and the gain optical fiber exceeding the optimal length can absorb the pumping light to participate in laser oscillation amplification in the ring resonant cavity by adjusting the power of the first pumping source 1 and the power of the second pumping source 2, so that high-power laser output is realized, and meanwhile, the problem that residual pumping light is converted into heat in the laser to increase the heat dissipation difficulty of the laser is avoided. And, the third laser power detector 23 measures the real-time power of the deep ultraviolet laser and sends the measured real-time power to the laser control part 20, and the laser control part 20 adjusts the power of the first infrared laser output by the first infrared seed light source 8 according to the real-time power of the deep ultraviolet laser and the set target output power, so that the power of the output deep ultraviolet laser reaches the set target output power, and the real-time adjustment of the power of the deep ultraviolet laser is realized.
In some embodiments, nonlinear conversion module 17 includes first frequency doubling crystal 12, second frequency doubling crystal 13, first sum frequency crystal 14, and second sum frequency crystal 15; the second infrared laser output by the second infrared seed light source 9 sequentially passes through the first frequency doubling crystal 12 and the second frequency doubling crystal 13 to be subjected to frequency doubling and then enters the first frequency summation crystal 14, the first infrared laser output by the first infrared seed light source 8 enters the first frequency summation crystal 14 to be subjected to frequency summation with the second infrared laser after frequency doubling to generate frequency summation laser, and the frequency summation laser and the rest of the first infrared laser enter the second frequency summation crystal 15 to be subjected to frequency summation and then output deep ultraviolet laser; the laser system further includes a laser pulse timing control part 24, where the laser pulse timing control part 24 is configured to control the laser output by the first infrared seed light source 8 and the laser output by the second infrared seed light source 9 after twice frequency multiplication to reach the first sum frequency crystal 14 at the same time.
Specifically, the laser light output from the first and second infrared seed light sources 8 and 9 has a time difference from generation to arrival at the first sum frequency crystal 14, and the laser pulse timing control section 24 controls the times at which the first and second infrared seed light sources 8 and 9 output the laser light so that the laser light reaches the first sum frequency crystal 14 at the same time, based on the time difference.
Further, the laser system further includes a fourth spectroscope 11, a fourth laser power detector 21, a fifth spectroscope, and a fifth laser power detector; the fourth spectroscope 11 is arranged at the output end of the first infrared seed light source 8 and is used for dividing the first infrared laser into two parts, one part enters the fourth laser power detector 21, and the other part enters the first sum frequency crystal 14; the fifth spectroscope 10 is arranged at the output end of the second infrared seed light source 9 and is used for dividing the second infrared laser into two parts, one part enters the fifth laser power detector 22, and the other part enters the first frequency doubling crystal 12; the fourth laser power detector 21 is configured to measure the power of the first infrared laser light and send the measured value to the laser control section 20; the fifth laser power detector 22 is configured to measure the power of the second infrared laser light and send the measured value to the laser control section 20.
Specifically, the fourth beam splitter 11 adopts a beam splitter prism, and the incident angle of the beam splitter prism is 45 °, and the beam splitter prism is configured at the output end of the first infrared seed light source 8, so that a part of the laser light output by the first infrared seed light source 8 is incident on the fourth laser power detector 21.
The fifth spectroscope 10 adopts a beam splitter prism, the incident angle of which is 45 degrees, and is configured at the output end of the second infrared seed light source 9, so that a part of laser light output by the second infrared seed light source 9 is incident on the fourth laser power detector 21.
Specifically, the second infrared seed light source 9 is a high-power ytterbium-doped yttrium aluminum garnet (Yb: YAG) laser with the output center wavelength of 1030nm, and an etalon placed in the resonant cavity of the laser can ensure that laser can vibrate in a longitudinal mode with a specific frequency to output a quasi-single-frequency 1030nm laser.
The first frequency doubling crystal 12 adopts LBO nonlinear optical crystal, the frequency doubling mode is temperature phase matching or angle phase matching, and the two end faces of the crystal are plated with the pair lambda 2 And lambda (lambda) 2 An antireflective dielectric film having a transmittance of 99% or more for a laser beam having a wavelength of/2.
The second frequency doubling crystal 13 adopts a CLBO nonlinear optical crystal, the frequency doubling mode is temperature phase matching or angle phase matching, and the two end surfaces of the crystal are plated with a pair lambda 2 2 and lambda 2 An antireflective dielectric film having a transmittance of at least 99% for a laser beam having a wavelength of/4.
The first sum frequency crystal 14 adopts a CLBO nonlinear optical crystal, the sum frequency mode is temperature phase matching or angle phase matching, and the two end surfaces of the crystal are plated with a pair lambda 2 /4、λ 1 And lambda (lambda) 3 An antireflective dielectric film having a wavelength laser light transmittance of 99% or more.
The second sum frequency crystal 15 adopts a CLBO nonlinear optical crystal, the sum frequency mode is temperature phase matching or angle phase matching, and the two end surfaces of the crystal are plated with a pair lambda 3 、λ 1 And an increase in the transmittance of 193nm wavelength laser light of 99% or moreA dielectric permeable membrane.
The nonlinear conversion module 17 operates on the principle that: the center wavelength of the second infrared laser output by the second infrared seed light source 9 is 1030nm and is marked as lambda 2 The second infrared laser output by the second infrared seed light source 9 enters the first frequency doubling crystal 12 to perform frequency doubling, and the output wavelength of the second infrared laser is changed into lambda 2 The laser of/2 enters the second frequency doubling crystal 13 to be subjected to frequency doubling, and the output wavelength becomes lambda 2 The laser/4, the laser pulse timing control part 24 is used for controlling the first infrared laser lambda output by the first infrared seed light source 8 1 The laser lambda after frequency multiplication output by the second infrared seed light source 9 2 And/4 reaches the first sum frequency crystal 14 at the same time to perform nonlinear conversion and then output laser lambda 3 Laser lambda 3 And the rest of the first infrared laser lambda 1 And continuously enters the second sum frequency crystal 15 to perform nonlinear conversion to output 193nm deep ultraviolet laser.
As shown in fig. 6, the control principle of the laser control unit 20 is: the laser control unit 20 receives the real-time output power P of the laser system measured by the third laser power detector 23 A Will output power P in real time A And a set target output power P T For comparison, if P A =P T The laser system outputs 193nm laser meeting the power requirement, if P A ≠P T Then the output laser power P1 of the first infrared seed light source 8 and the output laser power P of the second infrared seed light source 9 are adjusted 2 Make the real-time output power P A Equal to the target output power P T Thereby outputting 193nm laser meeting the power requirement. Specifically, the power P of the first infrared laser light outputted from the first infrared seed light source 8 1 Fixed to a larger value, e.g. adjusting the output power of the first pump source 1 and the output power of the second pump source 2, and monitoring the real-time power P output by the first IR seed light source 8 in real time 1 Until the fourth laser power detector 21 detects that the first infrared seed light source 8 outputs the maximum laser power P 1 . When outputting power P in real time A Less than the set target output power P T At the time, the second infrared laser output by the second infrared seed light source 9 is gradually increasedPower P of (2) 2 So that P A = P T . Meanwhile, the fourth laser power detector 21 measures the power of the first infrared laser, and the fifth laser power detector 22 measures the power of the second infrared laser, so that the power of the laser output by the first infrared seed light source 8 and the second infrared seed light source 9 is monitored.
In some embodiments, the laser system further includes a first mirror 16 and a second mirror 18, where the first mirror 16 is disposed at an output end of the second sum frequency crystal 15 for transmitting the deep ultraviolet laser light to the second mirror 18, and the second mirror 18 is for transmitting the deep ultraviolet laser light to the third beam splitter 19.
The first reflecting mirror 16 and the second reflecting mirror 18 are both high reflecting mirrors, the first reflecting mirror 16 reflects 193nm laser to enter the second reflecting mirror 18, and a high-reflection dielectric film with the 193nm laser reflectivity being more than 99% is plated on one surface of the first reflecting mirror 16, which is close to the second sum frequency crystal 15. The second mirror 18 is disposed on the reflection light path of the first mirror 16 so that 193nm laser light output from the nonlinear conversion module 17 can enter the third spectroscope 19, and a surface of the second mirror 18 facing the first mirror 16 is coated with a high-reflection dielectric film having a reflectivity of 99% or more for 193nm laser light.
In some embodiments, as shown in fig. 5, the nonlinear conversion module 17 further includes a first rotary table 34, a second rotary table 35, a third rotary table 36, and a fourth rotary table 37, where the first rotary table 34, the second rotary table 35, the third rotary table 36, and the fourth rotary table 37 are used to adjust angles at which the laser light enters the first frequency doubling crystal 12, the second frequency doubling crystal 13, the first sum frequency crystal 14, and the second sum frequency crystal 15, respectively.
Specifically, rotating motors connected to the laser control unit 20 are disposed in the first rotary table 34, the second rotary table 35, the third rotary table 36 and the fourth rotary table 37, and the laser control unit 20 controls the rotating motors in the first rotary table 34, the second rotary table 35, the third rotary table 36 and the fourth rotary table 37 according to the target output power, and adjusts the angles of incidence of the laser beams with each wavelength into each frequency doubling crystal and each frequency doubling crystal, so that the laser beams incident into the frequency doubling crystal and the frequency doubling crystal can be incident at angles of more matched phases, the nonlinear conversion module 17 has the maximum conversion efficiency, and meanwhile, when the output wavelengths of the first infrared seed light source 8 and/or the second infrared seed light source 9 drift, the phase matching offset of each frequency doubling crystal and the frequency doubling crystal is prevented, the wavelength conversion efficiency of the nonlinear conversion module 17 is low, and the real-time output power of the laser system is reduced.
According to the laser system provided by the embodiment of the invention, the first infrared seed light source 8 adopts the mode of bidirectional pumping and combining with the gain fiber, the bidirectional pumping can ensure the full pumping of the gain fiber, the gain fiber can be used for fully absorbing the pumping light and utilizing the residual pumping light, and the nonlinear Raman effect and the transverse mode unstable effect caused by uneven absorption of the fiber can be avoided, so that the laser can fully utilize the pumping light and the gain fiber with a longer length, the energy conversion efficiency of the laser system is improved, and the stable high-power laser output of the laser is realized.
And, the laser output power P of the first infrared seed light source 8 is monitored in real time 1 Laser output power P of the second infrared seed light source 9 2 And laser output power P of laser system A And by adjusting the laser output power P of the first infrared seed light source 8 1 And the laser output power P of the second infrared seed light source 9 2 The laser system finally outputs high-power 193nm laser with the same target output power, and the short wavelength, high power and high beam quality M meeting the holographic photoetching requirement 2 High efficiency laser output.
The laser system of the embodiment of the invention can be used as a component of exposure equipment and applied to a chip preparation process so as to realize exposure operation of a photoresist layer on a silicon substrate, ensure the photoetching quality and improve the photoetching yield and efficiency.
Although embodiments of the present invention have been described in connection with the accompanying drawings, various modifications and variations may be made by those skilled in the art without departing from the spirit and scope of the invention, and such modifications and variations fall within the scope of the invention as defined by the appended claims.
Claims (6)
1. A laser system is characterized by comprising a first infrared seed light source (8), a second infrared seed light source (9), a nonlinear conversion module (17), a third spectroscope (19), a third laser power detector (23) and a laser control part (20);
the nonlinear conversion module (17) is used for converting the first infrared laser output by the first infrared seed light source (8) and the second infrared laser output by the second infrared seed light source (9) into deep ultraviolet laser;
the third spectroscope (19) is used for dividing the deep ultraviolet laser into two parts, one part is used as output laser, and the other part is transmitted to the third laser power detector (23);
the third laser power detector (23) is used for measuring the real-time power of the deep ultraviolet laser and sending the measured real-time power to the laser control part (20);
the laser control part (20) is used for adjusting the power of the first infrared laser output by the first infrared seed light source (8) according to the real-time power of the deep ultraviolet laser and the set target output power;
The first infrared seed light source (8) comprises:
the device comprises a first pump source (1), a second pump source (2) and a ring resonant cavity, wherein the ring resonant cavity comprises a first wavelength division multiplexer (3), a gain optical fiber, a second wavelength division multiplexer (4) and an optical fiber coupler (7) which are sequentially connected and form a ring loop;
the laser output by the first pumping source (1) enters the gain fiber from one end of the gain fiber through the first wavelength division multiplexer (3) to provide pumping energy for the gain fiber;
the laser output by the second pumping source (2) enters the gain fiber from the other end of the gain fiber through the second wavelength division multiplexer (4) to provide pumping energy for the gain fiber;
the gain fiber generates first infrared laser under the excitation of the pumping energy provided by the first pumping source (1) and the pumping energy provided by the second pumping source (2), and the first infrared laser is amplified in the ring resonator in an oscillating way and is output through the fiber coupler (7);
the ring resonant cavity further comprises a filter (33), the filter (33) is arranged between the second wavelength division multiplexer (4) and the optical fiber coupler (7), and the filter (33) adopts an optical fiber Fabry-Perot filter, a Sagnac filter or an optical fiber Mach-Zehnder interferometer;
The gain fiber adopts at least two sections of erbium-doped fiber, and comprises a first erbium-doped fiber (5) and a second erbium-doped fiber (6) which are connected with each other, and the length of the gain fiber meets the following equation:
wherein,for the length of the nth gain fiber, +.>The absorption coefficient of the nth section of gain fiber, Q is determined by the total power of the pump source and the intensity of the nonlinear spectrum in the output spectrum;
the two-way pumping mode is adopted, the pumping energy output by the first pumping source (1) and the second pumping source (2) respectively enter the gain optical fiber from two ends of the gain optical fiber and pump the gain optical fiber, even if the gain optical fiber can not absorb the pumping energy after exceeding the optimal length in one direction, the gain optical fiber can also absorb the pumping energy provided in the other direction, so that the gain optical fiber exceeding the optimal length can absorb the pumping light to participate in the laser oscillation amplification in the annular resonant cavity;
the nonlinear conversion module (17) comprises a first frequency doubling crystal (12), a second frequency doubling crystal (13), a first sum frequency crystal (14) and a second sum frequency crystal (15);
the second infrared laser output by the second infrared seed light source (9) sequentially passes through the first frequency doubling crystal (12) and the second frequency doubling crystal (13) to be subjected to frequency doubling and then enters the first frequency summation crystal (14), the first infrared laser output by the first infrared seed light source (8) enters the first frequency summation crystal (14) and the second infrared laser after frequency doubling are subjected to frequency summation to generate frequency summation laser, and the frequency summation laser and the rest of the first infrared laser enter the second frequency summation crystal (15) together to be subjected to frequency summation and then output deep ultraviolet laser;
A laser pulse time sequence control part (24), wherein the laser pulse time sequence control part (24) is used for controlling the laser output by the first infrared seed light source (8) and the laser output by the second infrared seed light source (9) after twice frequency multiplication to reach the first sum frequency crystal (14) at the same time;
the first infrared laser output by the first infrared seed light source (8) has a high-power infrared laser with a wavelength of 1550nm, and the second infrared laser output by the second infrared seed light source (9) has a center wavelength of 1030nm.
2. The laser system according to claim 1, wherein the first infrared seed light source (8) further comprises: a first beam splitter (27), a first laser power detector (25), a first collimating system, a second beam splitter (28), a second laser power detector (26) and a second collimating system;
the first spectroscope (27) is arranged at an output port of the first pump source (1) and is used for dividing laser output by the first pump source (1) into two parts, one part enters the first wavelength division multiplexer (3) through the first collimation system, the other part enters the first laser power detector (25), and the first laser power detector (25) is used for measuring the power of the laser output by the first pump source (1);
The second beam splitter (28) is arranged at an output port of the second pump source (2) and is used for dividing laser output by the second pump source (2) into two parts, one part of the laser enters the second wavelength division multiplexer (4) through the second collimation system, the other part of the laser enters the second laser power detector (26), and the second laser power detector (26) is used for measuring the power of the laser output by the second pump source (2).
3. The laser system according to claim 2, characterized in that the first collimation system comprises a first lens (29) and a second lens (30), the first lens (29) and the second lens (30) being arranged in sequence on the optical path of the laser light output by the first pump source (1) after passing through the first beam splitter (27);
the second collimation system comprises a third lens (31) and a fourth lens (32), and the third lens (31) and the fourth lens (32) are sequentially arranged on an optical path of laser output by the second pumping source (2) after passing through the second beam splitter (28).
4. A laser system according to claim 3, characterized in that the laser system further comprises a first mirror (16) and a second mirror (18), the first mirror (16) being arranged at the output end of the second sum frequency crystal (15) for transmitting the deep ultraviolet laser light to the second mirror (18), the second mirror (18) being arranged for transmitting the deep ultraviolet laser light to the third beam splitter (19).
5. The laser system of claim 4, further comprising a fourth beam splitter (11), a fourth laser power detector (21), a fifth beam splitter (10), and a fifth laser power detector (22);
the fourth spectroscope (11) is arranged at the output end of the first infrared seed light source (8) and is used for dividing the first infrared laser into two parts, one part enters the fourth laser power detector (21) and the other part enters the first sum frequency crystal (14);
the fifth spectroscope (10) is arranged at the output end of the second infrared seed light source (9) and is used for dividing the second infrared laser into two parts, one part enters the fifth laser power detector (22) and the other part enters the first frequency doubling crystal (12);
the fourth laser power detector (21) is used for measuring the power of the first infrared laser and sending the measured value to the laser control part (20);
the fifth laser power detector (22) is configured to measure the power of the second infrared laser light and send the measured value to the laser control section (20).
6. The laser system according to claim 5, wherein the nonlinear conversion module (17) further comprises a first rotary table (34), a second rotary table (35), a third rotary table (36) and a fourth rotary table (37), the first rotary table (34), the second rotary table (35), the third rotary table (36) and the fourth rotary table (37) being used for adjusting angles at which laser light enters the first frequency doubling crystal (12), the second frequency doubling crystal (13), the first frequency doubling crystal (14) and the second frequency doubling crystal (15), respectively.
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