CN116825823A - Etching method of trench - Google Patents
Etching method of trench Download PDFInfo
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- CN116825823A CN116825823A CN202310789675.8A CN202310789675A CN116825823A CN 116825823 A CN116825823 A CN 116825823A CN 202310789675 A CN202310789675 A CN 202310789675A CN 116825823 A CN116825823 A CN 116825823A
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- 238000005530 etching Methods 0.000 title claims abstract description 88
- 238000000034 method Methods 0.000 title claims abstract description 81
- 238000010926 purge Methods 0.000 claims abstract description 88
- 206010037544 Purging Diseases 0.000 claims abstract description 50
- 239000000126 substance Substances 0.000 claims abstract description 48
- 230000008569 process Effects 0.000 claims abstract description 45
- 238000004381 surface treatment Methods 0.000 claims abstract description 28
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 95
- 238000006243 chemical reaction Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 15
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 abstract description 29
- 230000006872 improvement Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Abstract
The application provides a method for etching a channel, which comprises the following steps: providing an object to be etched, wherein the object to be etched comprises a plurality of fin structures, each fin structure comprises a sacrificial layer and a channel layer which are overlapped, and the widths of the fin structures along the channel direction are different; after the object to be etched is subjected to primary etching, surface treatment and purging treatment and secondary etching are circularly performed until all sacrificial layers of the fin structure are etched; the purging treatment is used for removing the first substance and the second substance; the first substance characterizes a substance introduced during the surface treatment; the second substance characterizes a substance produced when the surface treatment is performed; according to the technical scheme, the high selectivity etching of SiGe relative to Si is realized, and meanwhile, the problem that the subsequent etching process damages the dielectric material (such as SiN and the like) is reduced due to the fact that the selection of the sacrificial layer relative to the dielectric material (such as SiN and the like) is relatively low in the surface treatment process is solved.
Description
Technical Field
The application relates to the field of semiconductor devices, in particular to a channel etching method.
Background
The patent CN114639606a proposes a multi-step etching process in which the etch selectivity of SiGe to Si can be increased by an oxidation treatment. After the oxidation treatment, the etching selectivity of SiGe with respect to the dielectric material is reduced. Thus, the etch rate of the etch process with respect to the dielectric material (e.g., siN) may be increased, thereby affecting device performance. Therefore, finding the reason for the reduced etching selectivity of SiGe to dielectric material, and developing a channel etching process to avoid the problem of reduced etching selectivity of SiGe to dielectric material due to oxidation treatment while achieving high selectivity of SiGe/Si, is a technical key to be solved by those skilled in the art.
Disclosure of Invention
The application provides a trench etching method, which aims to solve the problem that the selection of a sacrificial layer relative to a dielectric material (such as SiN and the like) caused by the surface treatment process is relatively low, so that the damage of a subsequent etching process to the dielectric material (such as SiN) is reduced.
According to a first aspect of the present application, there is provided a method for etching a trench, comprising:
providing an object to be etched, wherein the object to be etched comprises a plurality of fin structures formed on a substrate, each fin structure comprises a sacrificial layer and a channel layer which are overlapped, and the widths of the fin structures along the channel direction are different;
after the object to be etched is etched once, circularly carrying out first treatment for a plurality of times until all sacrificial layers of the fin structure are etched; the first treatment comprises surface treatment purging treatment and secondary etching which are sequentially carried out;
wherein the primary etching and the secondary etching respectively comprise multi-step etching;
the purging treatment is used for removing the first substance and the second substance; the first substance characterizes a substance introduced during the surface treatment; the second substance characterizes a substance produced when the surface treatment is performed;
the primary etching is used for etching all sacrificial layers of the fin structures with the smallest width currently and part of sacrificial layers of other fin structures with wider widths in the fin structures;
the surface treatment is used for forming a protective layer on the exposed surfaces of the channel layer and the residual sacrificial layer of the object to be etched;
the secondary etching is used for etching out all sacrificial layers of fin structures with the current width and partial sacrificial layers of other fin structures with the current width being larger, and the protective layer.
Optionally, the purging treatment includes a first purging treatment and a second purging treatment;
the first purging treatment is used for removing a first substance in the reaction chamber; the second purging treatment is used for removing a second substance on the surface of the reaction chamber or/and the object to be etched;
the flow rate and the purge time of the purge gas when the second purge treatment is performed are larger than those when the first purge treatment is performed.
Optionally, when the second purging treatment is performed, the flow rate of the purging gas is greater than 1000sccm.
Optionally, when the second purging treatment is performed, the purging time is 120s or more.
Optionally, the etching and the surface treatment of the object to be etched are performed in the same reaction chamber.
Optionally, the first purging process or/and the second purging process is/are performed, and the purging gas used is an inert gas.
Optionally, the surface treatment is oxidation treatment, and the protective layer is an oxide layer.
Optionally, the first substance is an oxygen-containing substance.
Optionally, when the first purging treatment is performed, the flow rate of the purging gas is 300-500sccm.
Optionally, when the first purging treatment is performed, the purging time is: 40s-60s.
Optionally, after the first purging treatment and/or the second purging treatment, the method further includes: and vacuumizing the reaction chamber.
Optionally, the number of fin structures is two, specifically a first fin structure formed in a first region on the substrate and a second fin structure formed in a second region on the substrate; the first fin structure comprises a first sacrificial layer and a first channel layer which are overlapped, and the second fin structure comprises a second sacrificial layer and a second channel layer which are overlapped; the width of the first sacrificial layer and the width of the first channel layer along the channel direction are smaller than the width of the second sacrificial layer and the width of the second channel layer along the channel direction;
etching the object to be etched once to etch away all the first sacrificial layer and part of the second sacrificial layer;
forming an oxide layer on the exposed surfaces of the remaining sacrificial layer and the channel layer of the object to be etched;
performing the first purge treatment; for removing the first species within the reaction chamber; the first material characterizes a material introduced when forming an oxide layer;
performing a second purging treatment; the second substance is used for removing the surface of the reaction chamber or/and the object to be etched; the second material characterizes a material produced when the oxide layer is formed;
and carrying out secondary etching on the object to be etched to etch away all the sacrificial layers and the oxide layers on the second area.
Optionally, the material of the channel layer is Si, and the material of the sacrificial layer is SiGe.
According to a second aspect of the present application, there is provided a method of manufacturing a semiconductor device, comprising: a method of etching a trench according to any one of the first aspects of the present application.
According to a third aspect of the present application, there is provided a method for manufacturing an electronic device, including the method for manufacturing a semiconductor device according to the second aspect of the present application.
According to the channel etching method provided by the application, the first substances and the second substances remained on the surface of the object to be etched and in the reaction chamber in the surface treatment process are removed by circularly carrying out the purging treatment, so that the high selectivity etching of SiGe relative to dielectric materials (such as SiN) is ensured, the etching selectivity of a channel release process to the dielectric materials is ensured, the damage of a subsequent etching process to the dielectric materials (such as SiN) is further reduced, and the device performance is improved.
Drawings
In order to more clearly illustrate the embodiments of the application or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the application, and that other drawings can be obtained according to these drawings without inventive faculty for a person skilled in the art.
FIG. 1 is a flow chart of a method for etching a trench according to an embodiment of the present application;
fig. 2 is a flow chart of a method for etching a trench according to an embodiment of the application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The terms "first," "second," "third," "fourth" and the like in the description and in the claims and in the above drawings, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the application described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The patent CN114639606a proposes a multi-step etching process in which the etch selectivity of SiGe to Si can be increased by an oxidation treatment. However, the inventors of the present application found during further experiments that: after the oxidation treatment is introduced, the subsequent etching process is greatly damaged on the dielectric material (such as SiN), and thus the device performance is also affected.
The inventors of the present application also found through trial and error that: when high flux Ar or N2 is introduced into the reaction chamber for a certain time to carry out cyclic purging after the oxidation treatment, the damage to the dielectric material (such as SiN) in the subsequent etching process is recovered to the level before the oxidation treatment is introduced.
The inventor has found through research that: this phenomenon is due to the fact that oxygen remains on the surface of the object to be etched and the surface of the chamber after the oxidation treatment, and the remaining oxygen participates in the subsequent etching reaction, so that the etching selectivity of SiGe relative to the dielectric material is reduced. Thus, the etch rate of the etch process with respect to the dielectric material (e.g., siN) may be increased, thereby affecting device performance.
Meanwhile, there are a lot of documents that, when dry etching SiN (N-containing medium) is performed by using F-based gas, the introduction of oxygen into the etching gas greatly increases the etching rate of SiN. This is because introducing oxygen into the etching process results in NO being generated in the etching gas component, and NO2 being generated by the reaction of NO with the F-N bond on the SiN surface, and F atoms are released, so that migration of F atoms in F-N into SiN is accelerated, and the etching rate of SiN is accelerated.
In view of this, the inventors of the present application propose: the oxygen remained on the surface of the object to be etched and the surface of the reaction chamber in the oxidation process is removed completely through a cyclic purging process (introducing long-time or high-flux Ar or N2 and other inert gases), so that high selectivity etching of SiGe relative to dielectric materials (such as SiN) is realized, the etching selectivity of a channel release process to the dielectric materials is ensured, and further, the damage of a subsequent etching process to the dielectric materials (such as SiN) is reduced, thereby realizing the improvement of the device performance.
The technical scheme of the application is described in detail below by specific examples. The following embodiments may be combined with each other, and some embodiments may not be repeated for the same or similar concepts or processes.
According to an embodiment of the present application, there is provided a method for etching a trench, including:
s11: providing an object to be etched, wherein the object to be etched comprises a plurality of fin structures formed on a substrate, each fin structure comprises a sacrificial layer and a channel layer which are overlapped, and the widths of the fin structures along the channel direction are different;
s12: after the object to be etched is etched once, circularly carrying out first treatment for a plurality of times until all sacrificial layers of the fin structure are etched; the first treatment comprises surface treatment purging treatment and secondary etching which are sequentially carried out;
wherein the primary etching and the secondary etching respectively comprise multi-step etching;
the purging treatment is used for removing the first substance and the second substance; the first substance characterizes a substance introduced during the surface treatment; the second substance characterizes a substance produced when the surface treatment is performed; specifically, the secondary etching is a dry etching method based on F-based gas (NF 3, CF 4).
The primary etching is used for etching all sacrificial layers of the fin structures with the smallest width currently and part of sacrificial layers of other fin structures with wider widths in the fin structures;
the surface treatment is used for forming a protective layer on the exposed surfaces of the channel layer and the residual sacrificial layer of the object to be etched;
and the secondary etching is used for etching out all the sacrificial layers of the fin structures with the current width and part of the sacrificial layers of other fin structures with the current width larger than the current width after the previous etching is carried out, and the protective layer. The fin structure with the smallest current width is used as the fin structure with the larger current width in the next etching, and the fin structure with the smallest current width is pushed in the same way until the sacrificial layer in the fin structures with all the widths is etched;
the technical scheme provided by the application not only creatively discovers the reason that the selection ratio of SiGe to dielectric materials (such as SiN) is lower, but also removes the first substances and the second substances remained in the surface of the object to be etched and the reaction chamber in the surface treatment process by circularly carrying out the purging treatment mode, thereby ensuring the high selectivity etching of SiGe to dielectric materials (such as SiN), ensuring the etching selection ratio of the channel release process to dielectric materials, further reducing the damage of the subsequent etching process to dielectric materials (such as SiN), and further realizing the improvement of the performance of the device.
In one embodiment, the purging process includes a first purging process and a second purging process;
the first purging treatment is used for removing a first substance in the reaction chamber; the second purging treatment is used for removing a second substance on the surface of the reaction chamber or/and the object to be etched;
the flow rate and the purge time of the purge gas when the second purge treatment is performed are larger than those when the first purge treatment is performed.
Wherein, the object to be etched further comprises: the inner side walls are formed at two ends of the sacrificial layer along the horizontal direction; the inner sidewall wall is formed of a dielectric material (e.g., siN). Since the first substance and the second substance are introduced when the surface treatment is performed on the object to be etched, the selectivity of the sacrificial layer (SiGe) relative to the dielectric material (such as SiN, siON, siCON, siCO, siCN and the like) is reduced; therefore, when the sacrificial layer is etched to release the channel layer, the etching rate of the inner side wall (made of a dielectric material) is increased, so that the inner side wall is lost; when the first purging treatment and the second purging treatment are combined in a circulating way, the first substances and the second substances remained on the surface of the object to be etched and in the reaction chamber in the surface treatment process are removed, so that the etching selection ratio of the channel release process to the dielectric material is ensured.
In one embodiment, in step S12, after performing the first purging process and the second purging process, the method further includes: and vacuumizing the reaction chamber.
In order to facilitate industrial production, in a preferred embodiment, the etching and the surface treatment of the object to be etched are performed in the same reaction chamber.
In another embodiment, etching the object to be etched and surface treatment are performed in two different chambers.
In one embodiment, the second purge process is performed with a purge gas flow rate greater than 1000sccm.
In one embodiment, when the second purging process is performed, the purging time varies according to the process, and the total purging time is 120s or more.
In one embodiment, the first purge process is performed at a flow rate of 300-500sccm.
In one embodiment, when the first purging process is performed, the purging time is as follows: 40s-60s.
In one embodiment, the first purge process or/and the second purge process is/are performed with an inert gas. In particular, the purge gas may be nitrogen, argon or other inert gas.
In one embodiment, the surface treatment is an oxidation treatment and the protective layer is an oxide layer.
In one embodiment, the first substance is oxygen or oxygen radicals.
In one embodiment, the number of fin structures is two, specifically, a first fin structure formed in a first region on the substrate and a second fin structure formed in a second region on the substrate; the first fin structure comprises a first sacrificial layer and a first channel layer which are overlapped, and the second fin structure comprises a second sacrificial layer and a second channel layer which are overlapped; the width of the first sacrificial layer and the width of the first channel layer along the channel direction are smaller than the width of the second sacrificial layer and the width of the second channel layer along the channel direction; specifically, the material of the channel layer is Si, and the material of the sacrificial layer is SiGe.
S121: etching the object to be etched once to etch away all the first sacrificial layer and part of the second sacrificial layer;
s122: forming an oxide layer on the exposed surfaces of the remaining sacrificial layer and the channel layer of the object to be etched;
s123: performing the first purge treatment; for removing the first species within the reaction chamber; the first material characterizes a material introduced when forming an oxide layer; the first substance is oxygen;
s124: performing a second purging treatment; the second substance is used for removing the surface of the reaction chamber or/and the object to be etched; the second material characterizes a material produced when the oxide layer is formed; the second substance is impurities generated by oxidation of the surface of the reaction chamber or the object to be etched; specifically, the second substance is: residue of oxygenates (oxygen/oxygen radicals/oxygen containing functional groups).
S125: and carrying out secondary etching on the object to be etched to etch away all the sacrificial layers and the oxide layers on the second area.
According to the technical scheme provided by the application, the oxygen and substances generated by oxidation remained on the surface of the object to be etched and in the reaction chamber in the process of forming the oxide layer are removed by circularly carrying out the first purging treatment and the second purging treatment, so that the high selectivity etching of the sacrificial layer material relative to the dielectric material (such as SiN) is ensured while the high selectivity etching of the SiGe/Si is realized, the etching selectivity of the channel release process to the dielectric material is further ensured, the damage of the subsequent etching process to the dielectric material (such as SiN) is further reduced, and the improvement of the device performance is realized.
Next, according to an embodiment of the present application, there is also provided a method for manufacturing a semiconductor device, including: the method of etching a trench according to any of the preceding embodiments of the present application.
In addition, according to an embodiment of the present application, a method for manufacturing an electronic device is provided, including the method for manufacturing a semiconductor device according to the foregoing embodiment of the present application.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.
Claims (15)
1. The method for etching the channel is characterized by comprising the following steps of:
providing an object to be etched, wherein the object to be etched comprises a plurality of fin structures formed on a substrate, each fin structure comprises a sacrificial layer and a channel layer which are overlapped, and the widths of the fin structures along the channel direction are different;
after the object to be etched is etched once, circularly carrying out first treatment for a plurality of times until all sacrificial layers of the fin structure are etched; the first treatment comprises surface treatment purging treatment and secondary etching which are sequentially carried out;
wherein the primary etching and the secondary etching respectively comprise multi-step etching;
the purging treatment is used for removing the first substance and the second substance; the first substance characterizes a substance introduced during the surface treatment; the second substance characterizes a substance produced when the surface treatment is performed;
the primary etching is used for etching all sacrificial layers of the fin structures with the smallest width currently and part of sacrificial layers of other fin structures with wider widths in the fin structures;
the surface treatment is used for forming a protective layer on the exposed surfaces of the channel layer and the residual sacrificial layer of the object to be etched;
the secondary etching is used for etching out all sacrificial layers of fin structures with the current width and partial sacrificial layers of other fin structures with the current width being larger, and the protective layer.
2. The method of etching a trench according to claim 1, wherein the purge treatment includes a first purge treatment and a second purge treatment;
the first purging treatment is used for removing a first substance in the reaction chamber; the second purging treatment is used for removing a second substance on the surface of the reaction chamber or/and the object to be etched;
the flow rate and the purge time of the purge gas when the second purge treatment is performed are larger than those when the first purge treatment is performed.
3. The method according to claim 2, wherein a flow rate of the purge gas is more than 1000sccm when the second purge treatment is performed.
4. The method according to claim 3, wherein the second purge treatment is performed for a total purge time of 120s or more.
5. The method according to claim 4, wherein etching the object to be etched and performing surface treatment are performed in the same reaction chamber.
6. The method according to claim 5, wherein the first purge treatment or/and the second purge treatment is/are performed with an inert gas as the purge gas.
7. The method according to claim 6, wherein the surface treatment is oxidation treatment, and the protective layer is an oxide layer.
8. The method of claim 7, wherein the first species is an oxygen-containing species.
9. The method according to claim 8, wherein a flow rate of the purge gas is 300 to 500sccm when the first purge treatment is performed.
10. The method according to claim 9, wherein the first purging process is performed for a purging time of: 40s-60s.
11. The method according to claim 10, wherein after the first purge treatment and the second purge treatment, further comprising:
and vacuumizing the reaction chamber.
12. The method of claim 11, wherein the number of fin structures is two, specifically a first fin structure formed in a first region on the substrate and a second fin structure formed in a second region on the substrate; the first fin structure comprises a first sacrificial layer and a first channel layer which are overlapped, and the second fin structure comprises a second sacrificial layer and a second channel layer which are overlapped; the width of the first sacrificial layer and the width of the first channel layer along the channel direction are smaller than the width of the second sacrificial layer and the width of the second channel layer along the channel direction;
etching the object to be etched once to etch away all the first sacrificial layer and part of the second sacrificial layer;
forming an oxide layer on the exposed surfaces of the remaining sacrificial layer and the channel layer of the object to be etched;
performing the first purge treatment; for removing the first species within the reaction chamber; the first material characterizes a material introduced when forming an oxide layer;
performing a second purging treatment; the second substance is used for removing the surface of the reaction chamber or/and the object to be etched; the second material characterizes a material produced when the oxide layer is formed;
and carrying out secondary etching on the object to be etched to etch away all the sacrificial layers and the oxide layers on the second area.
13. The method for etching a trench as claimed in claim 12, wherein,
the material of the channel layer is Si, and the material of the sacrificial layer is SiGe.
14. A method of manufacturing a semiconductor device, comprising: a method of etching a trench as claimed in any one of claims 1 to 13.
15. A method of manufacturing an electronic device comprising the method of manufacturing a semiconductor device according to claim 14.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310789675.8A CN116825823A (en) | 2023-06-29 | 2023-06-29 | Etching method of trench |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310789675.8A CN116825823A (en) | 2023-06-29 | 2023-06-29 | Etching method of trench |
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| Publication Number | Publication Date |
|---|---|
| CN116825823A true CN116825823A (en) | 2023-09-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310789675.8A Pending CN116825823A (en) | 2023-06-29 | 2023-06-29 | Etching method of trench |
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| Country | Link |
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| CN (1) | CN116825823A (en) |
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- 2023-06-29 CN CN202310789675.8A patent/CN116825823A/en active Pending
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