CN116818667A - 2D and 3D integrated semiconductor microscopic vision detection system and method - Google Patents
2D and 3D integrated semiconductor microscopic vision detection system and method Download PDFInfo
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Abstract
The application relates to the technical field of wafer surface defect detection, in particular to a 2D and 3D integrated semiconductor microscopic vision detection system and method. The system comprises a left optical image acquisition unit, a middle optical image acquisition unit and a right optical image acquisition unit which are distributed in space, wherein central axes of the left optical image acquisition unit, the middle optical image acquisition unit and the right optical image acquisition unit are positioned on the same vertical plane, and lower areas of the left optical image acquisition unit, the middle optical image acquisition unit and the right optical image acquisition unit form an image acquisition area; the left optical image acquisition unit is used for acquiring image information on the left side of the image acquisition area, the middle optical image acquisition unit is used for acquiring image information on the middle part of the image acquisition area, and the right optical image acquisition unit is used for acquiring image information on the right side of the image acquisition area. The method is implemented based on the system. The application can realize accurate acquisition of the original image data, thereby being beneficial to the improvement of the follow-up defect detection precision.
Description
Technical Field
The application relates to the technical field of wafer surface defect detection, in particular to a 2D and 3D integrated semiconductor microscopic vision detection system and method.
Background
In semiconductor detection, common detection systems in the market are divided into three optical systems, namely a 2D main detection system, a 2D recheck system and a 3D detection system. The 2D main inspection system and the 2D rechecking system are mainly used for detecting 2D information including length and width of the surface defects of the wafer, and the 3D detection system is mainly used for detecting 3D information including height of the surface defects of the wafer. In the current detection of wafer surface defects, detection and acquisition of 3D information are generally realized in a form of line structured light, and the detection and acquisition are based on an original image acquired by an optical imaging system and acquired by adopting a related image processing algorithm; however, since the surface defects of the wafer are of various types, when the conventional detection system collects image data, detection dead zones exist due to shielding of the surface defects of the wafer, and the detection accuracy of the defect detection is greatly reduced due to the existence of the detection dead zones.
Disclosure of Invention
The present application provides a 2D and 3D integrated semiconductor microscopic vision inspection system that overcomes some or some of the deficiencies of the prior art.
The application relates to a 2D and 3D integrated semiconductor microscopic vision detection system, which comprises a left optical image acquisition unit, a middle optical image acquisition unit and a right optical image acquisition unit which are distributed in space, wherein central axes of the left optical image acquisition unit, the middle optical image acquisition unit and the right optical image acquisition unit are positioned on the same vertical plane, and lower areas of the left optical image acquisition unit, the middle optical image acquisition unit and the right optical image acquisition unit form an image acquisition area;
the left optical image acquisition unit is used for acquiring image information on the left side of the image acquisition area, the middle optical image acquisition unit is used for acquiring image information on the middle part of the image acquisition area, and the right optical image acquisition unit is used for acquiring image information on the right side of the image acquisition area.
Through the design, 2D (middle optical image acquisition unit 120) and 3D detection (left optical image acquisition unit 110 and right optical image acquisition unit 130) can be integrated into one set of optical system, and when a wafer (namely a detection object) is detected, 2D and 3D information of the wafer can be preferably acquired through one scanning; therefore, the wafer detection speed is greatly increased while the detection precision is ensured.
Preferably, the left optical image acquisition unit is provided with a left light tube assembly, the front end of the left light tube assembly is provided with a left high-power telecentric lens assembly, and the rear end of the left light tube assembly is provided with a left camera assembly; the left light tube component is provided with a left coaxial light source component, the left coaxial light source component is used for generating left line structure light, and the left camera component is used for receiving reflected light generated by the left line structure light at the image acquisition area;
the middle optical image acquisition unit is provided with a middle light tube assembly, the front end of the middle light tube assembly is provided with a middle-high telecentric lens assembly, and the rear end of the middle light tube assembly is provided with a middle camera assembly; the middle light tube assembly is also provided with a middle coaxial light source assembly, the middle coaxial light source assembly is used for generating middle line structure light, and the middle camera assembly is used for receiving reflected light generated by the middle line structure light at the image acquisition area;
the right optical image acquisition unit is provided with a right light tube assembly, the front end of the right light tube assembly is provided with a right high-power telecentric lens assembly, and the rear end of the right light tube assembly is provided with a right camera assembly; the right light tube component is also provided with a right coaxial light source component, the right coaxial light source component is used for generating right line structure light, and the right camera component is used for receiving reflected light generated by the right line structure light at the image acquisition area.
Through the design, the left optical image acquisition unit, the middle optical image acquisition unit and the right optical image acquisition unit can synchronously operate, namely, images of the wafer (namely, at the image acquisition area) can be acquired from the left, the middle and the right at the same time when the wafer is in a certain same state; therefore, in the process of processing by a subsequent algorithm, the data of all images can be mutually compensated or corrected, and the accuracy and resolution of defect detection can be effectively improved.
Preferably, the left light tube assembly is further provided with a side left camera assembly, and the side left camera assembly is used for receiving reflected light generated by right line structured light at the image acquisition area;
the right light tube assembly is also provided with a side right camera assembly which is used for receiving reflected light generated by the left line structure light at the image acquisition area.
The design can better solve the problem of triangular dead zones existing in the process of acquiring 3D information by adopting structured light image calculation, so that the reproduction of the 3D image of the wafer can be better realized, and the detection result is more real.
Preferably, the left high power telecentric lens assembly, the middle high power telecentric lens assembly and the right high power telecentric lens assembly each have a lens mounting cylinder and a front lens and a rear lens provided at both ends of the lens mounting cylinder. So that the collection of the related images can be preferably realized.
Preferably, the left coaxial light source assembly, the middle coaxial light source assembly and the right coaxial light source assembly are respectively and vertically arranged at the left light cylinder assembly, the middle light cylinder assembly and the right light cylinder assembly; the left coaxial light source assembly, the middle coaxial light source assembly and the right coaxial light source assembly comprise light sources, slit sheets, a first light source lens, a second light source lens and a first spectroscope which are sequentially arranged, and the first spectroscope is a semi-transparent semi-reflective mirror. Therefore, the construction of the incident light path and the reflection light path can be preferably realized.
Preferably, the left side camera assembly and the right side camera assembly are respectively and vertically arranged at the left light tube assembly and the right light tube assembly, the left side camera assembly and the right side camera assembly both comprise a second beam splitter, the second beam splitter is a long-wavelength beam splitter, and the left line structure light and the right line structure light are short-wave light sources. Therefore, stray light can be better filtered, and the related images can be better collected.
Preferably, the wavelengths of the left line structured light and the right line structured light do not exceed 405nm.
Preferably, the left optical image acquisition unit, the middle optical image acquisition unit and the right optical image acquisition unit are provided with surface light sources. This enables to construct bright field or dark field detection effects, preferably according to different detection requirements; and the bright field effect and the dark field effect can coexist in single detection, so that the detection effect can be effectively improved.
In addition, the application also provides a 2D and 3D integrated semiconductor microscopic vision detection method which is realized by adopting any one of the 2D and 3D integrated semiconductor microscopic vision detection systems. Therefore, accurate acquisition of the original image data can be better realized, and the improvement of the follow-up defect detection accuracy is facilitated.
Drawings
FIG. 1 is a schematic diagram of the system in example 1;
FIG. 2 is a schematic diagram of a light source assembly and a high magnification telecentric lens assembly in embodiment 1;
fig. 3 is a schematic diagram of a left optical image capturing unit in embodiment 1
FIG. 4 is a schematic diagram of the process in example 1;
fig. 5 is a schematic diagram of the left optical image capturing unit capturing a reflected light image at the right optical image capturing unit in embodiment 1;
fig. 6 is a schematic diagram of the right optical image capturing unit capturing a reflected light image at the left optical image capturing unit in embodiment 1.
Detailed Description
For a further understanding of the present application, the present application will be described in detail with reference to examples. It is to be understood that the examples are illustrative of the present application and are not intended to be limiting.
Example 1
Referring to fig. 1, the present embodiment provides a 2D and 3D integrated semiconductor microscopic vision inspection image capturing system, which includes a left optical image capturing unit 110, a middle optical image capturing unit 120 and a right optical image capturing unit 130 that are spatially distributed, central axes of the left optical image capturing unit 110, the middle optical image capturing unit 120 and the right optical image capturing unit 130 are located on the same vertical plane, and lower regions of the left optical image capturing unit 110, the middle optical image capturing unit 120 and the right optical image capturing unit 130 form an image capturing region;
the left optical image capturing unit 110 is configured to capture image information on the left side of the image capturing area, the middle optical image capturing unit 120 is configured to capture image information on the middle of the image capturing area, and the right optical image capturing unit 130 is configured to capture image information on the right side of the image capturing area.
Through the design, 2D (middle optical image acquisition unit 120) and 3D detection (left optical image acquisition unit 110 and right optical image acquisition unit 130) can be integrated into one set of optical system, and when a wafer (namely a detection object) is detected, 2D and 3D information of the wafer can be preferably acquired through one scanning; therefore, the wafer detection speed is greatly increased while the detection precision is ensured.
It can be appreciated that in this embodiment, due to the symmetrical design of the left optical image capturing unit 110 and the right optical image capturing unit 130, the image information of the wafer can be captured at the same time from different angles, so that the blind area of image capturing can be eliminated, the capturing precision of the 3D information can reach 0.1um, and the resolution can reach 0.05um.
In addition, due to the design of the middle optical image acquisition unit 120, more accurate 2D information of the wafer can be acquired at the same time, so that the images acquired by the middle optical image acquisition unit 120 can be used as the reference of the 2D information in the subsequent processing, and the left optical image acquisition unit 110 and the right optical image acquisition unit 130 can be corrected for the 2D information, so that the accuracy and resolution of defect detection can be further improved.
In the present embodiment of the present application,
the left optical image acquisition unit 110 is provided with a left light tube assembly 111, a left high-power telecentric lens assembly 112 is arranged at the front end of the left light tube assembly 111, and a left camera assembly 113 is arranged at the rear end of the left light tube assembly 111; a left coaxial light source assembly 114 is arranged at the left light tube assembly 111, the left coaxial light source assembly 114 is used for generating left line structured light 115, and the left camera assembly 113 is used for receiving reflected light generated by the left line structured light 115 at the image acquisition area;
the middle optical image acquisition unit 120 is provided with a middle light tube assembly 121, a middle-high telecentric lens assembly 122 is arranged at the front end of the middle light tube assembly 121, and a middle camera assembly 123 is arranged at the rear end of the middle light tube assembly 121; the middle light tube assembly 121 is further provided with a middle coaxial light source assembly 124, the middle coaxial light source assembly 124 is used for generating middle line structure light 125, and the middle camera assembly 123 is used for receiving reflected light generated by the middle line structure light 125 at an image acquisition area;
the right optical image acquisition unit 130 is provided with a right light tube assembly 131, a right high-power telecentric lens assembly 132 is arranged at the front end of the right light tube assembly 131, and a right camera assembly 133 is arranged at the rear end of the right light tube assembly 131; the right light tube assembly 131 is further provided with a right coaxial light source assembly 134, the right coaxial light source assembly 134 is configured to generate right line structured light 135, and the right camera assembly 133 is configured to receive reflected light generated by the right line structured light 135 at the image acquisition region.
Through the above design, the left optical image acquisition unit 110, the middle optical image acquisition unit 120 and the right optical image acquisition unit 130 can operate synchronously, i.e. images of the wafer (i.e. at the image acquisition area) can be acquired from left, middle and right at the same time when the wafer is in a certain state; therefore, in the process of processing by a subsequent algorithm, the data of all images can be mutually compensated or corrected, and the accuracy and resolution of defect detection can be effectively improved.
In the present embodiment of the present application,
a side left camera assembly 116 is also provided at the left light cartridge assembly 111, the side left camera assembly 116 for receiving reflected light generated by the right line structured light 135 at the image acquisition region;
a side right camera assembly 136 is also provided at the right light cartridge assembly 131, the side right camera assembly 136 for receiving reflected light generated by the left line structured light 115 at the image acquisition region.
The design can better solve the problem of triangular dead zones existing in the process of acquiring 3D information by adopting structured light image calculation, so that the reproduction of the 3D image of the wafer can be better realized, and the detection result is more real.
That is, by one scanning, the left optical image capturing unit 110 and the right optical image capturing unit 130 can both capture 3D image data of 2 wafers, and the accuracy of defect detection can be better improved by performing subsequent processes such as weighting calculation and data fusion on the total 4 3D image data.
In the present embodiment, the left high-power telecentric lens assembly 112, the middle high-power telecentric lens assembly 122, and the right high-power telecentric lens assembly 132 each have a lens mount cylinder 211, and a front lens 212 and a rear lens 213 provided at both ends of the lens mount cylinder 211. So that the collection of the related images can be preferably realized.
In this embodiment, the left coaxial light source assembly 114, the middle coaxial light source assembly 124 and the right coaxial light source assembly 134 are respectively and vertically disposed at the left light tube assembly 111, the middle light tube assembly 121 and the right light tube assembly 131; the left coaxial light source assembly 114, the middle coaxial light source assembly 124, and the right coaxial light source assembly 134 each include a light source 221, a slit sheet 222, a first light source lens 223, a second light source lens 224, and a first beam splitter 225, where the first beam splitter 225 is a half mirror. Therefore, the construction of the incident light path and the reflection light path can be preferably realized.
In this embodiment, the left side camera assembly 116 and the right side camera assembly 136 are respectively and vertically disposed at the left light tube assembly 111 and the right light tube assembly 131, the left side camera assembly 116 and the right side camera assembly 136 each include a second beam splitter 310, the second beam splitter 310 is a long-wavelength beam splitter, and the left line structure light 115 and the right line structure light 135 are short-wavelength light sources. Therefore, stray light can be better filtered, and the related images can be better collected.
In this embodiment, the wavelengths of the left line structured light 115 and the right line structured light 135 do not exceed 405nm.
In this embodiment, the left optical image capturing unit 110, the middle optical image capturing unit 120, and the right optical image capturing unit 130 are each provided with a surface light source. This enables to construct bright field or dark field detection effects, preferably according to different detection requirements; and the bright field effect and the dark field effect can coexist in single detection, so that the detection effect can be effectively improved.
Based on the system of the embodiment, the embodiment also provides a 2D and 3D integrated semiconductor microscopic vision detection image acquisition method, which is realized by adopting the system. Therefore, accurate acquisition of the original image data can be better realized, and the improvement of the follow-up defect detection accuracy is facilitated.
As seen in fig. 4, during actual image acquisition, the left coaxial light source assembly 114, the middle coaxial light source assembly 124, and the right coaxial light source assembly 134 can be turned on simultaneously; at this time, the middle optical image acquisition unit 120 can be only used for acquiring the reflected light of the middle coaxial light source assembly 124, so that the acquisition of 2D image data can be preferably realized; the left optical image capturing unit 110 and the right optical image capturing unit 130 can both capture the reflected light of the own light source and the reflected light of the opposite side light source at the same time, so that 4 3D image data under different angles can be preferably captured.
Referring to fig. 5, a schematic diagram of the left optical image capturing unit 110 capturing the reflected light image at the right optical image capturing unit 130;
referring to fig. 6, a schematic diagram of the right optical image capturing unit 130 capturing the reflected light image at the left optical image capturing unit 110 is shown.
In addition, by controlling the turn-on sequence or the number of the surface light sources at the left, middle and right optical image capturing units 110, 120, 130, it is possible to realize that the left, middle and right optical image capturing units 110, 120, 130 can simultaneously realize capturing of images under bright and dark field effects.
It is to be understood that, based on one or several embodiments provided in the present application, those skilled in the art may combine, split, reorganize, etc. the embodiments of the present application to obtain other embodiments, which do not exceed the protection scope of the present application.
The application and its embodiments have been described above by way of illustration and not limitation, and the examples are merely illustrative of embodiments of the application and the actual construction is not limited thereto. Therefore, if one of ordinary skill in the art is informed by this disclosure, the structural mode and the embodiments similar to the technical scheme are not creatively designed without departing from the gist of the present application.
Claims (9)
1. A 2D and 3D integrated semiconductor microscopic vision inspection system, characterized by: the three-dimensional imaging device comprises a left optical image acquisition unit (110), a middle optical image acquisition unit (120) and a right optical image acquisition unit (130) which are distributed in space, wherein central axes of the left optical image acquisition unit (110), the middle optical image acquisition unit (120) and the right optical image acquisition unit (130) are positioned on the same vertical plane, and lower areas of the left optical image acquisition unit (110), the middle optical image acquisition unit (120) and the right optical image acquisition unit (130) form an image acquisition area;
the left optical image acquisition unit (110) is used for acquiring image information on the left side of the image acquisition area, the middle optical image acquisition unit (120) is used for acquiring image information on the middle part of the image acquisition area, and the right optical image acquisition unit (130) is used for acquiring image information on the right side of the image acquisition area.
2. A 2D and 3D integrated semiconductor microscopic vision inspection system according to claim 1, characterized in that:
the left optical image acquisition unit (110) is provided with a left light tube assembly (111), the front end of the left light tube assembly (111) is provided with a left high-power telecentric lens assembly (112), and the rear end of the left light tube assembly (111) is provided with a left camera assembly (113); a left coaxial light source assembly (114) is arranged at the left light tube assembly (111), the left coaxial light source assembly (114) is used for generating left line structured light (115), and the left camera assembly (113) is used for receiving reflected light generated by the left line structured light (115) at an image acquisition area;
the middle optical image acquisition unit (120) is provided with a middle light tube assembly (121), a middle-high telecentric lens assembly (122) is arranged at the front end of the middle light tube assembly (121), and a middle camera assembly (123) is arranged at the rear end of the middle light tube assembly (121); the middle light tube assembly (121) is also provided with a middle coaxial light source assembly (124), the middle coaxial light source assembly (124) is used for generating middle line structure light (125), and the middle camera assembly (123) is used for receiving reflected light generated by the middle line structure light (125) at the image acquisition area;
the right optical image acquisition unit (130) is provided with a right light tube assembly (131), the front end of the right light tube assembly (131) is provided with a right high-power telecentric lens assembly (132), and the rear end of the right light tube assembly (131) is provided with a right camera assembly (133); the right light tube assembly (131) is further provided with a right coaxial light source assembly (134), the right coaxial light source assembly (134) is used for generating right line structured light (135), and the right camera assembly (133) is used for receiving reflected light generated by the right line structured light (135) at the image acquisition area.
3. A 2D and 3D integrated semiconductor microscopic vision inspection system according to claim 2, characterized in that:
a side left camera assembly (116) is further arranged at the left light cylinder assembly (111), and the side left camera assembly (116) is used for receiving reflected light generated by the right line light (135) at the image acquisition area;
a side right camera assembly (136) is also provided at the right light barrel assembly (131), the side right camera assembly (136) for receiving reflected light generated by the left line of light (115) at the image acquisition area.
4. A 2D and 3D integrated semiconductor microscopic vision inspection system according to claim 2, characterized in that: the left high-power telecentric lens assembly (112), the middle high-power telecentric lens assembly (122) and the right high-power telecentric lens assembly (132) are provided with a lens mounting cylinder (211), and a front lens (212) and a rear lens (213) which are arranged at two ends of the lens mounting cylinder (211).
5. A 2D and 3D integrated semiconductor microscopic vision inspection system according to claim 2, characterized in that: the left coaxial light source assembly (114), the middle coaxial light source assembly (124) and the right coaxial light source assembly (134) are respectively and vertically arranged at the left light tube assembly (111), the middle light tube assembly (121) and the right light tube assembly (131); the left coaxial light source assembly (114), the middle coaxial light source assembly (124) and the right coaxial light source assembly (134) comprise a light source (221), a slit sheet (222), a first light source lens (223), a second light source lens (224) and a first spectroscope (225) which are sequentially arranged, wherein the first spectroscope (225) is a half-mirror.
6. A 2D and 3D integrated semiconductor microscopic vision inspection system according to claim 3, characterized in that: the side left camera component (116) and the side right camera component (136) are respectively and vertically arranged at the left light tube component (111) and the right light tube component (131), the side left camera component (116) and the side right camera component (136) comprise a second beam splitter (310), the second beam splitter (310) is a long-wavelength beam splitter, and the left line structure light (115) and the right line structure light (135) are short-wave light sources.
7. A 2D and 3D integrated semiconductor microscopic vision inspection system according to claim 6, characterized in that: the wavelength of the left line structured light (115) and the right line structured light (135) does not exceed 405nm.
8. A 2D and 3D integrated semiconductor microscopic vision inspection system according to claim 6, characterized in that: the left optical image acquisition unit (110), the middle optical image acquisition unit (120) and the right optical image acquisition unit (130) are provided with surface light sources.
9. A 2D and 3D integrated semiconductor microscopic vision inspection method implemented using a 2D and 3D integrated semiconductor microscopic vision inspection system according to any of claims 1-8.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117538333A (en) * | 2023-12-26 | 2024-02-09 | 苏州矽行半导体技术有限公司 | Lens array and wafer detection device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117538333A (en) * | 2023-12-26 | 2024-02-09 | 苏州矽行半导体技术有限公司 | Lens array and wafer detection device |
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