CN116815306B - Surface deposition device for silicon carbide epitaxial wafer - Google Patents
Surface deposition device for silicon carbide epitaxial wafer Download PDFInfo
- Publication number
- CN116815306B CN116815306B CN202310836861.2A CN202310836861A CN116815306B CN 116815306 B CN116815306 B CN 116815306B CN 202310836861 A CN202310836861 A CN 202310836861A CN 116815306 B CN116815306 B CN 116815306B
- Authority
- CN
- China
- Prior art keywords
- box
- recovery
- deposition
- silicon carbide
- reciprocating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 90
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 69
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 235000012431 wafers Nutrition 0.000 claims abstract description 47
- 238000007790 scraping Methods 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims description 104
- 238000011084 recovery Methods 0.000 claims description 86
- 239000000126 substance Substances 0.000 claims description 17
- 239000003381 stabilizer Substances 0.000 claims description 13
- 238000004321 preservation Methods 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 238000010304 firing Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 230000001681 protective effect Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000004064 recycling Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000003303 reheating Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013064 chemical raw material Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a surface deposition device for silicon carbide epitaxial wafers, which relates to the technical field of deposition equipment and solves the technical problem of inconvenient quick blanking, and the surface deposition device comprises a deposition box, wherein a placement table is arranged in the deposition box, a cover plate is rotatably arranged at the top of the deposition box, an air inlet pipe is arranged on the cover plate, a blanking component and a lifting component are arranged on the deposition box, the blanking component comprises a scraping plate, a reciprocating unit is arranged on one side, close to the cover plate, of the deposition box, the scraping plate is arranged on the deposition box through the reciprocating unit, a blanking frame is fixedly arranged on one side of the deposition box, a conveying belt is rotatably arranged on the blanking frame, a receiving plate is fixedly arranged on one side, close to the conveying belt, of the deposition box, a plurality of limiting strips are fixedly arranged on the conveying belt, and a second motor is fixedly arranged on the blanking frame; the production cycle of the silicon carbide epitaxial wafer is shortened, and the working efficiency of the device is improved.
Description
Technical Field
The utility model relates to the technical field of deposition equipment, in particular to a surface deposition device for a silicon carbide epitaxial wafer.
Background
Along with the continuous development of technology, the demands on semiconductor materials in the market are also increasing, wherein the silicon carbide epitaxial wafer is prepared by adopting a chemical vapor deposition method mainly according to the excellent characteristics of large forbidden bandwidth, high critical field intensity, high thermal conductivity and the like, but the ventilation pipeline of the traditional chemical vapor deposition device is single, so that the operation flexibility is reduced, for example, the opening and closing states of a vacuum tube, a second gas tube and a first gas tube can be flexibly controlled through a valve in Chinese patent publication No. CN209383850U, further, the real-time adjustment can be carried out according to the actual chemical vapor deposition conditions, the operation flexibility is improved, and the problem that the operation flexibility is reduced due to the single ventilation pipeline of the traditional chemical vapor deposition device for producing the silicon carbide epitaxial wafer is solved.
However, the device is inconvenient to directly take by hand due to overhigh temperature, the device needs to wait for a period of time and then take, the production efficiency of the silicon carbide epitaxial wafer is delayed, the silicon carbide epitaxial wafer is taken out after the device is cooled, the device needs to be blown again to heat when the silicon carbide is reprocessed, resources are wasted easily, the production efficiency of the device is affected, the working efficiency of the device is affected, and the working efficiency of the device for quick discharging is affected.
Disclosure of Invention
The utility model aims to provide a surface deposition device for a silicon carbide epitaxial wafer, which solves the following technical problems:
because the temperature is too high, the device is inconvenient to directly take by hand, the device needs to wait for a period of time and then take, delays the production efficiency of the silicon carbide epitaxial wafer, takes out the silicon carbide epitaxial wafer after the device is cooled, and needs to blow the device again to heat when processing silicon carbide again, so that resources are wasted easily, the production efficiency of the device is affected, the working efficiency of the device is affected, and the working efficiency of the device for quick discharging is affected.
The aim of the utility model can be achieved by the following technical scheme:
the utility model provides a surface deposition device for carborundum epitaxial wafer, includes the deposition box, install in the deposition box and place the platform, the top of deposition box rotates and installs the apron, install the intake pipe on the apron, be provided with unloading subassembly and lifting unit on the deposition box, unloading subassembly includes the scraper blade, one side that the deposition box is close to the apron is provided with reciprocating unit, the scraper blade passes through reciprocating unit and installs on the deposition box, one side fixed mounting of deposition box has the unloading frame, the unloading frame rotates and installs the conveyer belt, one side fixed mounting that the deposition box is close to the conveyer belt has the receiving plate, fixed mounting has a plurality of spacing on the conveyer belt, fixed mounting has the second motor on the unloading frame, be provided with recovery unit on the deposition box.
As a further scheme of the utility model: the reciprocating unit comprises a reciprocating screw, a reciprocating groove is formed in one side, close to the scraping plate, of the depositing box, the reciprocating screw is rotatably mounted on the inner walls of two ends of the reciprocating groove, a reciprocating block is mounted on the reciprocating screw in a threaded penetrating mode, the scraping plate is fixedly mounted on one side, close to the cover plate, of the reciprocating block, and a first motor is fixedly mounted on the depositing box.
As a further scheme of the utility model: the output end of the first motor penetrates through the reciprocating groove in a sliding mode and is fixedly arranged on the reciprocating screw rod, and the bottom surface of the scraping plate is in sliding fit with the top surface of the deposition box.
As a further scheme of the utility model: the output end of the second motor penetrates through the blanking frame in a sliding mode and is fixedly arranged on a driving shaft of the conveying belt, a plurality of radiating holes are formed in the conveying belt, and one end, far away from the deposition box, of the receiving plate is arranged above the conveying belt.
As a further scheme of the utility model: the lifting assembly comprises a rack, the rack is installed on the inner bottom wall of the deposition box in a sliding penetrating mode, one end, close to the cover plate, of the rack is fixedly installed on the placement table, a third motor is fixed on one side, far away from the cover plate, of the deposition box, a gear is fixedly installed on an output shaft, close to one side of the rack, of the third motor, and the gear and the rack are meshed with each other.
As a further scheme of the utility model: the inner bottom wall of the deposition box is provided with a stabilizer bar in a sliding penetrating mode, one end, far away from the third motor, of the stabilizer bar is fixedly arranged on the placement table, one end, far away from the placement table, of the stabilizer bar is fixedly provided with a limit ring, one side, close to the rack, of the deposition box is fixedly provided with a sealing gasket, and the sealing gasket is nested and arranged on the rack.
As a further scheme of the utility model: the recovery assembly comprises a heat recovery box, the heat recovery box is fixedly arranged on one side, far away from the blanking frame, of the deposition box, a preheating groove is formed in one side, close to the cover plate, of the heat recovery box, a first recovery groove and a second recovery groove are formed in one side, far away from the preheating groove, of the heat recovery box, a plurality of guide plates are fixedly arranged in the first recovery groove and the second recovery groove, a second air pump is fixedly arranged on one side, far away from the cover plate, of the deposition box, and a first recovery pipe and a second recovery pipe are arranged on the second air pump in a communicating mode.
As a further scheme of the utility model: one end of the first recovery pipe, which is far away from the second air pump, is communicated with the second recovery groove, and one end of the second recovery pipe, which is far away from the second air pump, is communicated with the deposition box.
As a further scheme of the utility model: a protective cover is fixedly arranged on the inclined surface of the blanking frame far away from the deposition box, a first air pump is fixedly arranged at the top of the protective cover far away from the blanking frame, a heat preservation pipe is arranged between the first air pump and the heat recovery box in a communicating way, the heat preservation pipe is communicated with the first recovery groove, an exhaust pipe is fixedly arranged on one side, close to the conveying belt, of the protective cover, and the exhaust pipe is communicated with the first exhaust pump.
The utility model has the beneficial effects that:
the blanking assembly enables the output end of the first motor to drive the reciprocating screw to rotate through starting the first motor and the second motor, meanwhile enables the reciprocating block to drive the scraping plate to push the silicon carbide epitaxial wafer on the placing table to the receiving plate to fall onto the conveying belt, and enables the output end of the second motor to drive the conveying belt to rotate through the driving shaft, so that the silicon carbide epitaxial wafer can be conveniently and quickly taken, the time for waiting for cooling of the silicon carbide epitaxial wafer is avoided as much as possible, the situation of reheating during production by using the device after cooling is avoided as much as possible, heating resources are wasted, the production period of the silicon carbide epitaxial wafer is shortened, the production efficiency of the silicon carbide epitaxial wafer is improved, the working efficiency of the device is improved, heating resources are saved, and the working efficiency of the device for quick blanking is improved;
the lifting assembly drives the gear to rotate by starting the third motor, simultaneously enables the third motor to be meshed with the rack to drive the rack to rotate upwards, simultaneously enables the rack to drive the placing table to move upwards, and enables the placing table to move to a position flush with the top of the deposition box when the limit ring is attached to the deposition box, so that lifting operation is facilitated, a silicon carbide epitaxial wafer is convenient to take, lifting efficiency of the device is improved, and working efficiency of the device is improved;
the recovery assembly is used for enabling the first air pump and the second air pump to take away heat on the silicon carbide epitaxial wafer through the air extraction pipe, enabling air with heat to enter the first recovery tank and pass through the guide plate to remove the heat recovery tank, enabling the heat to be absorbed by the heat recovery tank and used for preheating silicon carbide, enabling the second air pump to pump out the chemical gas which is not fully reacted with the deposition tank through the first recovery pipe, enabling the chemical gas with heat to enter the deposition tank again under the action of the guide plate, enabling the heat recovery tank to absorb the heat and be used for preheating the silicon carbide, facilitating recycling of the heat, recycling the chemical gas, saving energy sources and improving the user experience of the device.
Drawings
The utility model is further described below with reference to the accompanying drawings.
FIG. 1 is a schematic view of an exploded structure of a surface deposition apparatus for silicon carbide epitaxial wafers according to the present utility model;
FIG. 2 is an enlarged schematic view of the structure of FIG. 1 at A;
FIG. 3 is a schematic top view of a surface deposition apparatus for silicon carbide epitaxial wafers according to the present utility model;
FIG. 4 is a schematic view showing the internal structure of a surface deposition apparatus for silicon carbide epitaxial wafers according to the present utility model;
FIG. 5 is an enlarged schematic view of the structure at B in FIG. 4;
FIG. 6 is an enlarged schematic view of the structure at C in FIG. 4;
FIG. 7 is a schematic bottom view of a surface deposition apparatus for silicon carbide epitaxial wafers according to the present utility model;
fig. 8 is an enlarged schematic view of the structure at D in fig. 7.
In the figure: 1. a deposition box; 2. a cover plate; 3. an air inlet pipe; 4. a placement table; 5. a blanking assembly; 51. a reciprocating groove; 52. a reciprocating screw; 53. a reciprocating block; 54. a scraper; 55. a first motor; 56. a blanking frame; 57. a conveyor belt; 58. a limit bar; 59. a second motor; 510. a heat radiation hole; 511. a receiving plate; 6. a recovery assembly; 61. a protective cover; 62. a first air pump; 63. a heat preservation pipe; 64. an exhaust pipe; 65. a preheating tank; 66. a heat recovery tank; 67. a first recovery tank; 68. a second recovery tank; 69. a deflector; 610. a second recovery pipe; 611. a second air pump; 612. a first recovery pipe; 7. a lifting assembly; 71. a third motor; 72. a gear; 73. a rack; 74. a stabilizer bar; 75. a limit ring; 76. and a sealing gasket.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Example 1
Referring to fig. 1-8, the utility model is a surface deposition device for silicon carbide epitaxial wafers, comprising a deposition box 1, a placement table 4 is installed in the deposition box 1, a heating device is installed in the deposition box 1, so as to be convenient for heating silicon carbide in the deposition box 1, the placement table 4 plays a role in placing silicon carbide, a cover plate 2 is rotatably installed at the top of the deposition box 1, an air inlet pipe 3 is installed on the cover plate 2, the air inlet pipe 3 conveys gas for driving chemical raw materials, silicon carbide is deposited and grown into silicon carbide epitaxial wafers under the action of the chemical raw materials, a blanking component 5 and a lifting component 7 are arranged on the deposition box 1, the blanking component 5 comprises a scraper 54, a reciprocating unit is arranged on one side of the deposition box 1 close to the cover plate 2, the scraper 54 is installed on the deposition box 1 through the reciprocating unit, a blanking frame 56 is fixedly installed on one side of the deposition box 1, a conveying belt 57 is rotatably installed on the blanking frame 56, one side of the deposition box 1, which is close to the conveyor belt 57, is fixedly provided with a receiving plate 511, one end of the receiving plate 511, which is far away from the deposition box 1, is arranged above the conveyor belt 57, a plurality of limit strips 58 are fixedly arranged on the conveyor belt 57, the limit strips 58 play a role in limiting and blocking silicon carbide epitaxial wafers, the conveyor belt 57 is provided with a plurality of heat dissipation holes 510, the heat dissipation holes 510 are convenient for ventilation air to cool the silicon carbide epitaxial wafers, a second motor 59 is fixedly arranged on a blanking frame 56, the output end of the second motor 59 penetrates through the blanking frame 56 in a sliding manner and is fixedly arranged on a driving shaft of the conveyor belt 57 to drive the conveyor belt 57 to rotate, the silicon carbide epitaxial wafers which are convenient for blanking and conveying heat are convenient to generate, the reciprocating unit comprises a reciprocating screw 52, one side of the deposition box 1, which is close to the scraper 54, is provided with a reciprocating groove 51, the reciprocating screw 52 is rotatably arranged on the inner walls at two ends of the reciprocating groove 51, the reciprocating screw 52 is provided with a reciprocating block 53 in a threaded penetrating manner, the bottom surface of the reciprocating block 53 is in sliding fit with the inner bottom wall of the reciprocating groove 51, the reciprocating block 53 is limited, a scraping plate 54 is fixedly arranged on one side of the reciprocating block 53 close to the cover plate 2, a first motor 55 is fixedly arranged on the deposition box 1, the output end of the first motor 55 penetrates through the reciprocating groove 51 in a sliding manner and is fixedly arranged on the reciprocating screw 52, the bottom surface of the scraping plate 54 is in sliding fit with the top surface of the deposition box 1, the silicon carbide on the scraping placement table 4 is scraped, the deposition box 1 is provided with a recovery assembly 6, when the device is used, firstly the silicon carbide is placed on the placement table 4, then the deposition box 1 is started to heat the silicon carbide, then an air inlet pipe 3 is started to enable chemical gas to enter the deposition box 1 to generate chemical reaction and fall on the silicon carbide to form a silicon carbide epitaxial wafer, and then the cover plate 2 is opened, the placing table 4 pushes the silicon carbide epitaxial wafer to the position flush with the deposition box 1 under the drive of the lifting component 7, then the first motor 55 and the second motor 59 are started, the output end of the first motor 55 drives the reciprocating screw 52 to rotate, meanwhile, the reciprocating screw 52 drives the reciprocating block 53 to move in the reciprocating groove 51, meanwhile, the reciprocating block 53 drives the scraping plate 54 to push the silicon carbide epitaxial wafer on the placing table 4 to the material receiving plate 511 to fall onto the conveying belt 57, meanwhile, the output end of the second motor 59 drives the conveying belt 57 to rotate through the driving shaft, so that the silicon carbide epitaxial wafer is convenient to be transported and discharged, the silicon carbide epitaxial wafer is convenient to be quickly taken, the time for waiting for cooling the silicon carbide epitaxial wafer is avoided as much as possible, the situation of reheating in the production of the device after cooling is avoided as much as possible, the heating resources are wasted, the production cycle of the silicon carbide epitaxial wafer is facilitated to be shortened, the working efficiency of the device is improved, and the heating resource is saved.
Example two
Referring to fig. 4-6, on the basis of the first embodiment, the lifting assembly 7 comprises a rack 73, the rack 73 is installed on the inner bottom wall of the deposition box 1 in a sliding penetrating manner, one end of the rack 73, which is close to the cover plate 2, is fixedly installed on the placement table 4, one side, which is far away from the cover plate 2, of the deposition box 1 is fixedly provided with a third motor 71, a gear 72 is fixedly installed on an output shaft, which is close to one side of the rack 73, of the third motor 71, the gear 72 and the rack 73 are meshed with each other, the rack 73 drives the placement table 4 to lift up and down under the action of the third motor 71, a stabilizer 74 is installed on the inner bottom wall of the deposition box 1 in a sliding penetrating manner, the stabilizer 74 plays a role of stabilizing the placement table 4, one end of the stabilizer 74, which is far away from the placement table 4, is fixedly installed with a limit ring 75, the limit ring 75 plays a role of limiting stabilizer 74, one side, which is close to the rack 73, of the deposition box 1 is fixedly installed with a seal 76, the seal 76 is installed on the output shaft, which is nested on the rack 73, and the seal 76 plays a role of sealing, when the device is used, firstly, the third motor 71 is started, the rack 73 drives the placement table 4 to lift up and down, and drives the third motor 71 to move up and down, and the slide wire 71 is driven by the third motor 71, and the slide wire drives the third motor 71 to rotate, and the slide wire drives the slide wire 73 is simultaneously, and the slide table 1 is meshed with the third motor 73 on the top, and the slide table 4, and the slide table is conveniently rotates the slide table 73 and the slide table is simultaneously, and the slide table is placed on the slide table 4.
Example III
Referring to fig. 1-8, on the basis of the first and second embodiments, the recovery assembly 6 includes a heat recovery tank 66, the heat recovery tank 66 is fixedly installed on a side of the deposition tank 1 far away from the blanking frame 56, a preheating tank 65 is opened on a side of the heat recovery tank 66 near the cover plate 2, silicon carbide is placed in the preheating tank 65 to facilitate preheating of the silicon carbide, the heat recovery tank 66 facilitates recovery and utilization of heat on the silicon carbide epitaxial wafer, heat generated in the exhaust gas in the deposition tank 1 is conveniently recovered, a first recovery tank 67 and a second recovery tank 68 are opened on a side of the heat recovery tank 66 far away from the preheating tank 65, a plurality of guide plates 69 are fixedly installed in the first recovery tank 67 and the second recovery tank 68, the plurality of guide plates 69 are alternately installed on inner walls of the first recovery tank 67 and the second recovery tank 68, the effect of prolonging the residence time of the gas in the first recovery tank 67 and the second recovery tank 68 is achieved, the first recovery tank 67 mainly plays the role of recovering heat, then the gas is discharged, the second recovery tank 68 plays the role of recovering heat, the second air pump 611 is fixedly arranged on one side of the deposition tank 1 far away from the cover plate 2, which pumps the unused chemical raw material in the deposition tank 1 into the second recovery tank 68 through the first recovery pipe 612 and the second recovery pipe 610, the recycling is facilitated, the first recovery pipe 612 and the second recovery pipe 610 are arranged on the second air pump 611 in a communicating way, one end of the first recovery pipe 612 far away from the second air pump 611 is arranged on the deposition tank 1 in a communicating way, one end of the second recovery pipe 610 far away from the second air pump 611 is mutually communicated with the second recovery tank 68, the second recovery tank 68 is mutually communicated with the deposition tank 1, the inclined surface of the blanking frame 56 far away from the deposition box 1 is fixedly provided with a protective cover 61, the protective cover 61 plays a role in protecting the silicon carbide epitaxial wafer and facilitating heat collection, the top of the protective cover 61 far away from the blanking frame 56 is fixedly provided with a first air pump 62, the first air pump 62 is convenient for pumping away the heat carried on the silicon carbide epitaxial wafer through an air pump 64, the gas with the heat enters a first recovery groove 67 through a heat preservation pipe 63, the heat preservation pipe 63 is arranged between the first air pump 62 and the heat recovery box 66 in a communicating way, the heat preservation pipe 63 is communicated with the first recovery groove 67, one side of the protective cover 61 close to a conveyor belt 57 is fixedly provided with the air pump 64, the air pump 64 is communicated with the first air pump 62, when the device is used, the first air pump 62 and the second air pump 611 are started, and simultaneously the first air pump 62 takes away the heat on the silicon carbide epitaxial wafer through the air pump 64 under the action of the protective cover 61, simultaneously, the heat exchange of the air is facilitated through the heat dissipation holes 510, simultaneously, the air with heat is enabled to enter the heat preservation pipe 63 under the action of the first air pump 62, simultaneously, the air with heat is enabled to enter the first recovery tank 67 and is discharged from the heat recovery tank 66 through the guide plate 69, the heat is absorbed by the heat recovery tank 66 for preheating silicon carbide, simultaneously, the second air pump 611 is enabled to pump out the non-fully reacted chemical gas of the deposition tank 1 through the first recovery pipe 612 and carry a large amount of heat, simultaneously, the chemical gas with heat is enabled to enter the second recovery tank 68 through the second recovery pipe 610, simultaneously, the chemical gas with heat is enabled to enter the deposition tank 1 again under the action of the guide plate 69, simultaneously, the heat recovery tank 66 absorbs the heat for preheating the silicon carbide, the heat is conveniently recycled, the chemical gas is convenient to recycle, the energy is saved, the user experience of the device is improved, and the recycling efficiency of the device is improved.
The working principle of the utility model is as follows: when the device is used, firstly, the silicon carbide is placed on the placing table 4, then the depositing box 1 is started to heat the silicon carbide, then the air inlet pipe 3 is started to enable chemical gas to be introduced into the depositing box 1 to generate chemical reaction and fall onto the silicon carbide to form silicon carbide epitaxial wafer, then the cover plate 2 is opened, then the third motor 71 is started, the output end of the third motor 71 drives the gear 72 to rotate, simultaneously the third motor 71 is meshed with and drives the rack 73 to rotate upwards, simultaneously the rack 73 slides on the sealing gasket 76, simultaneously the rack 73 drives the placing table 4 to move on a line, simultaneously the placing table 4 drives the stabilizer 74 to slide on the depositing box 1, when the limiting ring 75 is attached to the depositing box 1, the placing table 4 moves to a position flush with the top of the depositing box 1, then the first motor 55 and the second motor 59 are started, the output end of the first motor 55 drives the reciprocating screw 52 to rotate, simultaneously the reciprocating screw 52 drives the reciprocating block 53 to move in the reciprocating groove 51, simultaneously the scraper 53 drives the silicon carbide epitaxial wafer on the placing table 4 to the material receiving plate 511 to fall onto the motor 57, simultaneously the rack 73 slides on the sealing gasket 76, simultaneously the rack 73 drives the rack 73 to move on the placing table 4, simultaneously drives the stabilizer 74 to slide on the line, simultaneously the limiting ring 75 is attached to the depositing box 1, when the limiting ring 75 is attached to the depositing box 1, the first motor 55 and the second motor 59 is started, the output end of the first motor 55 drives the reciprocating screw 55 and the reciprocating screw 52 is driven by the reciprocating screw 53, simultaneously, the reciprocating screw is driven by the reciprocating screw 53, the reciprocating screw 511, the reciprocating 511, and the reciprocating 511 is driven by the reciprocating conveying screw and the reciprocating on the reciprocating upper and the reciprocating upper end, and the reciprocating upper end of the reciprocating lifting rod and the lifting rod. Simultaneously, the second air pump 611 is used for pumping out the incompletely reacted chemical gas in the deposition box 1 through the first recovery pipe 612, and the incompletely reacted chemical gas carries a large amount of heat, simultaneously, the chemical gas with heat is led into the second recovery groove 68 through the second recovery pipe 610, simultaneously, the chemical gas with heat is led into the deposition box 1 again under the action of the guide plate 69, and simultaneously, the heat recovery box 66 is used for absorbing the heat for preheating silicon carbide.
The foregoing describes one embodiment of the present utility model in detail, but the description is only a preferred embodiment of the present utility model and should not be construed as limiting the scope of the utility model. All equivalent changes and modifications within the scope of the present utility model are intended to be covered by the present utility model.
Claims (5)
1. The surface deposition device for the silicon carbide epitaxial wafer comprises a deposition box (1), and is characterized in that: the utility model discloses a deposition box (1), including depositing box (1) and depositing box (1), deposit box (1) is installed in top rotation and is installed apron (2), install firing equipment in depositing box (1) be convenient for heat the carborundum in depositing box (1), install intake pipe (3) on apron (2), intake pipe (3) play the effect that carries and drive chemical raw materials gas, carborundum deposit under chemical raw materials's effect and grow into carborundum epitaxial wafer, be provided with unloading subassembly (5) and lifting unit (7) on depositing box (1), unloading subassembly (5) include scraper blade (54), one side that depositing box (1) is close to apron (2) is provided with reciprocating unit, scraper blade (54) are installed on depositing box (1) through reciprocating unit, one side fixed mounting of depositing box (1) has unloading frame (56), unloading frame (56) are rotated and are installed conveyer belt (57), one side fixed mounting that is close to conveyer belt (57) of depositing box (1) is connected with the work or material board (511), unloading subassembly (73) are installed to one side fixed mounting that is close to conveyer belt (57), second fixed mounting (73), the utility model provides a thermal recovery device, including depositing box (1), deposit box (1), rack (73) slip runs through the interior diapire of installing on depositing box (1), the one end fixed mounting that rack (73) is close to apron (2) is on place bench (4), one side that depositing box (1) is kept away from apron (2) is fixed with third motor (71), fixed mounting has gear (72) on the output shaft that third motor (71) is close to rack (73) one side, gear (72) and rack (73) intermesh, install stabilizer bar (74) slip runs through on the interior diapire of depositing box (1), one end fixed mounting that stabilizer bar (74) kept away from third motor (71) is on place bench (4), one end fixed mounting that stabilizer bar (74) kept away from place bench (4) has spacing collar (75), one side fixed mounting that depositing box (1) is close to rack (73) has sealing gasket (76), the nested mounting is on rack (73), be provided with subassembly (6) on depositing box (1), subassembly (6) include that recovery box (66) are kept away from on one side of the heat recovery tank (66) is kept away from under the fixed heat recovery tank (66), first recovery groove (67) and second recovery groove (68) have been seted up to one side that preheating tank (65) was kept away from to heat recovery case (66), all fixed mounting has a plurality of guide plates (69) in first recovery groove (67) and second recovery groove (68), one side fixed mounting that apron (2) was kept away from to deposit case (1) has second aspiration pump (611), first recovery pipe (612) and second recovery pipe (610) are installed to intercommunication on second aspiration pump (611), fixed mounting has protection casing (61) on the inclined plane that deposit case (1) was kept away from to unloading frame (56), top fixed mounting that unloading frame (56) were kept away from to protection casing (61) has first aspiration pump (62), intercommunication installs heat preservation pipe (63) between first aspiration pump (62) and the heat recovery case (66), one side fixed mounting that protection casing (61) is close to conveyer belt (57) has aspiration pipe (64), aspiration pipe (64) and first aspiration pump (64) intercommunication each other.
2. A surface deposition apparatus for silicon carbide epitaxial wafers as claimed in claim 1, wherein: the reciprocating unit comprises a reciprocating screw (52), a reciprocating groove (51) is formed in one side, close to the scraping plate (54), of the depositing box (1), the reciprocating screw (52) is rotatably installed on the inner walls of two ends of the reciprocating groove (51), a reciprocating block (53) is installed on the reciprocating screw (52) in a threaded penetrating mode, the scraping plate (54) is fixedly installed on one side, close to the cover plate (2), of the reciprocating block (53), and a first motor (55) is fixedly installed on the depositing box (1).
3. A surface deposition apparatus for silicon carbide epitaxial wafers as claimed in claim 2, wherein: the output end of the first motor (55) penetrates through the reciprocating groove (51) in a sliding mode and is fixedly arranged on the reciprocating screw rod (52), and the bottom surface of the scraping plate (54) is in sliding fit with the top surface of the deposition box (1).
4. A surface deposition apparatus for silicon carbide epitaxial wafers as claimed in claim 1, wherein: the output end of the second motor (59) penetrates through the blanking frame (56) in a sliding mode and is fixedly arranged on a driving shaft of the conveying belt (57), a plurality of radiating holes (510) are formed in the conveying belt (57), and one end, far away from the deposition box (1), of the receiving plate (511) is arranged above the conveying belt (57).
5. A surface deposition apparatus for silicon carbide epitaxial wafers as claimed in claim 1, wherein: one end of the first recovery pipe (612) far away from the second air pump (611) is communicated and installed on the deposition box (1), one end of the second recovery pipe (610) far away from the second air pump (611) is communicated with the second recovery groove (68), and the second recovery groove (68) is communicated with the deposition box (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310836861.2A CN116815306B (en) | 2023-07-10 | 2023-07-10 | Surface deposition device for silicon carbide epitaxial wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310836861.2A CN116815306B (en) | 2023-07-10 | 2023-07-10 | Surface deposition device for silicon carbide epitaxial wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116815306A CN116815306A (en) | 2023-09-29 |
| CN116815306B true CN116815306B (en) | 2024-04-09 |
Family
ID=88114387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310836861.2A Active CN116815306B (en) | 2023-07-10 | 2023-07-10 | Surface deposition device for silicon carbide epitaxial wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116815306B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR980009677U (en) * | 1996-07-10 | 1998-04-30 | 문정환 | Atmospheric Chemical Vapor Deposition Equipment |
| CN1315588A (en) * | 2000-01-26 | 2001-10-03 | 李铁真 | Equipment for thermochemical vapour deposition and method for making carbon nm tube with this equipment |
| CN1398661A (en) * | 2001-07-23 | 2003-02-26 | 日本酸素株式会社 | Exhaust recovering and treating method and plant for chemical vapor deposition |
| CN110541158A (en) * | 2019-09-11 | 2019-12-06 | 大同新成新材料股份有限公司 | preparation method of nitride semiconductor material |
| CN113862784A (en) * | 2021-09-27 | 2021-12-31 | 杭州中欣晶圆半导体股份有限公司 | Method and device for preparing high-flatness epitaxial wafer |
| CN114560236A (en) * | 2020-11-27 | 2022-05-31 | 东莞新科技术研究开发有限公司 | Material unloading method |
-
2023
- 2023-07-10 CN CN202310836861.2A patent/CN116815306B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR980009677U (en) * | 1996-07-10 | 1998-04-30 | 문정환 | Atmospheric Chemical Vapor Deposition Equipment |
| CN1315588A (en) * | 2000-01-26 | 2001-10-03 | 李铁真 | Equipment for thermochemical vapour deposition and method for making carbon nm tube with this equipment |
| CN1398661A (en) * | 2001-07-23 | 2003-02-26 | 日本酸素株式会社 | Exhaust recovering and treating method and plant for chemical vapor deposition |
| CN110541158A (en) * | 2019-09-11 | 2019-12-06 | 大同新成新材料股份有限公司 | preparation method of nitride semiconductor material |
| CN114560236A (en) * | 2020-11-27 | 2022-05-31 | 东莞新科技术研究开发有限公司 | Material unloading method |
| CN113862784A (en) * | 2021-09-27 | 2021-12-31 | 杭州中欣晶圆半导体股份有限公司 | Method and device for preparing high-flatness epitaxial wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116815306A (en) | 2023-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1149633C (en) | Apparatus for and method of cleaning objects to be processed | |
| TWI494173B (en) | Cleaning apparatus and cleaning method, film growth reaction apparatus and growth method | |
| US10240231B2 (en) | Chemical vapor deposition apparatus and its cleaning method | |
| CN103143489A (en) | Shelf type thermocuring machine | |
| CN116815306B (en) | Surface deposition device for silicon carbide epitaxial wafer | |
| CN115648409B (en) | Production method and production device of foamed ceramic insulation board | |
| TW201712149A (en) | Gas suction device for preventing clogging, and MOCVD apparatus provided with the device can effectively prevent deposited reactants from clogging the suction holes of the gas suction device so that the gas in the reaction chamber is evenly distributed to maintain consistency of the wafer process | |
| CN214688539U (en) | Packaging decoration printing equipment with clean dust removal function | |
| CN111912175A (en) | Drying device for silicon carbide micro powder | |
| CN203124235U (en) | Layer-shelf-type thermosetting machine | |
| CN114686818B (en) | Temperature-control vacuum evaporation equipment for spectacle lenses | |
| CN215373133U (en) | Assembly line cooling device is used in cylinder cap production | |
| CN107671433A (en) | A kind of laser cutting machine for possessing waste material collection device | |
| CN213340288U (en) | Automatic dustless oven opens door | |
| KR20130007438A (en) | Film forming apparatus | |
| CN213273447U (en) | Drying device for silicon carbide micro powder | |
| CN113532117A (en) | Quartz particle high-temperature calcination, cooling and blanking integrated device and working method thereof | |
| CN111664679A (en) | Drying equipment for coating processing | |
| CN216620579U (en) | Industry microwave equipment with supplementary heat radiation structure | |
| CN108439772A (en) | A kind of vacuum deshydroxy stove of quartz glass product | |
| CN110948076A (en) | Electronic component soldering tin recycling device | |
| CN116536754A (en) | Multi-station silicon carbide crystal growth device and growth method | |
| CN214982397U (en) | Cooling device is used in plastic granules processing | |
| CN217648803U (en) | Cooling mechanism for machining and forming O-shaped sealing ring | |
| CN214529229U (en) | Vacuum coating machine cooling device for producing optical lenses |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |