CN110541158A - preparation method of nitride semiconductor material - Google Patents
preparation method of nitride semiconductor material Download PDFInfo
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- CN110541158A CN110541158A CN201910858555.2A CN201910858555A CN110541158A CN 110541158 A CN110541158 A CN 110541158A CN 201910858555 A CN201910858555 A CN 201910858555A CN 110541158 A CN110541158 A CN 110541158A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
Abstract
The invention belongs to the field of preparation of semiconductor materials, in particular to a preparation method of a nitride semiconductor material, which aims at solving the problem that the existing method is inconvenient to recycle heat and causes energy waste, and provides the following scheme, comprising the following steps: s1: placing the silicon substrate in an epitaxial reaction chamber, heating to remove a natural oxide layer on the surface of the silicon substrate, controlling the gas flow through a control mechanism, and introducing a nitrogen source through a flow guide mechanism to form a crystalline Si3N4 layer on the surface of the silicon substrate; s2: introducing an aluminum source, converting the crystalline Si3N4 layer into an AlN nucleating layer, and epitaxially growing a nitride semiconductor material on the AlN nucleating layer; s3: recovering hot gas formed by heating, and preheating the material; s4: the invention can recycle hot gas, avoid energy waste and control the gas inlet speed.
Description
Technical Field
The invention relates to the technical field of preparation of semiconductor materials, in particular to a preparation method of a nitride semiconductor material.
Background
The semiconductor refers to a material having a conductivity between a conductor and an insulator at normal temperature. Semiconductors are widely used in the fields of consumer electronics, communication systems, medical instruments, and the like. Such as diodes, are devices fabricated using semiconductors. The importance of semiconductors is enormous, both from a technological and economic point of view. Most of today's electronic products, such as computers, mobile phones or digital audio recorders, have a core unit closely related to semiconductors. Common semiconductor materials include silicon, germanium, gallium arsenide, and the like, silicon is one of various semiconductor materials, and is the most influential in commercial applications, and nitride semiconductor materials are excellent in performance and suitable for manufacturing semiconductor photoelectrons and electronic devices, and the preparation of nitride semiconductor materials is receiving wide attention.
Through search, patent document No. 201310145404.5 discloses a method for epitaxially growing a group III nitride semiconductor material on a silicon substrate, first forming a crystalline Si3N4 layer on the surface of the silicon substrate; then introducing an aluminum source to convert the crystalline Si3N4 layer into an AlN nucleating layer; and finally, epitaxially growing a III-nitride semiconductor material on the AlN nucleating layer. According to the growth method provided by the invention, the surface of the silicon substrate is nitrided to form the crystalline Si3N4 layer and then is aluminized to form the AlN nucleating layer, so that the problem of lattice mismatch between the silicon substrate and the III group nitride semiconductor material is solved, and the epitaxial growth of the high-quality III group nitride semiconductor material is realized on the silicon substrate. The growth method provided by the invention has the advantages of simple and convenient process and simple operation, can complete the whole epitaxial growth process in one reaction chamber, and has a prospect of large-scale application.
however, the above method of nitride semiconductor material is inconvenient for recycling heat and wasting energy, so we propose a method of preparing nitride semiconductor material to solve the above problems.
Disclosure of Invention
The invention aims to solve the defects that in the prior art, heat is not convenient to recycle and energy is wasted, and provides a preparation method of a nitride semiconductor material.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for preparing a nitride semiconductor material, comprising the steps of:
S1: placing the silicon substrate in an epitaxial reaction chamber, heating to remove a natural oxide layer on the surface of the silicon substrate, controlling the gas flow through a control mechanism, and introducing a nitrogen source through a flow guide mechanism to form a crystalline Si3N4 layer on the surface of the silicon substrate;
s2: introducing an aluminum source, converting the crystalline Si3N4 layer into an AlN nucleating layer, and epitaxially growing a nitride semiconductor material on the AlN nucleating layer;
S3: recovering hot gas formed by heating, and preheating the material;
S4: the prepared nitride semiconductor material was examined.
preferably, in S1, the reacting chamber is equipped with air inlet and gas outlet, and the air inlet is equipped with the baffle, and baffle and electric putter drive are through the scope that the baffle sheltered from the air inlet to adjust the size of air inlet, control the admission speed, the side of baffle is equipped with the scale, can carry out accurate control to the distance that the baffle removed.
Preferably, the guide mechanism comprises a rotating shaft and a rotating blade, the rotating shaft drives the rotating blade to rotate, so that the nitrogen source circles around the material to be fully contacted with the material, the rotating shaft is driven by a motor, the motor is controlled by a controller, the controller is programmable, and the rotating speed of the motor is controlled by the controller.
Preferably, in the step S1, the silicon substrate is placed in an epitaxial reaction chamber, the temperature is raised to 600-1100 ℃, the natural oxide layer on the surface of the silicon substrate is removed, then the temperature is controlled to 400-1100 ℃, and a nitrogen source is introduced to form a crystalline Si3N4 layer on the surface of the silicon substrate.
Preferably, in S2, an aluminum source is introduced at a temperature of 400-1400 ℃, the crystalline Si3N4 layer is converted into an AlN nucleation layer, and a nitride semiconductor material is epitaxially grown on the AlN nucleation layer.
Preferably, the air outlet is connected with one end of a spiral pipe, the spiral pipe is coiled on the outer side of the preheating box, and hot air passes through the spiral pipe and heats the preheating box through heat conduction of the spiral pipe, so that materials are preheated.
preferably, the other end of spiral pipe rotates and installs the apron, is connected with same spring on apron and the spiral pipe, and when steam in the spiral pipe was less, the gas outlet to the spiral pipe was closed through the apron, increased steam dwell time in the spiral pipe, when steam was more, atmospheric pressure will lap the jack-up, and steam is discharged, makes the apron close the spiral pipe again through the spring.
Preferably, the gas outlet of spiral pipe is connected with the cooler, and the cooler is cooled down gas and is handled, is connected with the clarifier on the cooler, and the clarifier purifies gas, avoids the polluted environment.
preferably, in S1, a heater is disposed in the reaction chamber, and the heater is used for raising the temperature.
Preferably, in S1, a temperature detector is disposed in the reaction chamber, the heater, the temperature sensor and the controller are electrically connected, the temperature sensor detects the temperature in the reaction chamber, the controller controls the heater to be turned off when the temperature is higher than a set value, and the controller controls the heater to be turned on when the temperature is lower than the set value.
Compared with the prior art, the invention has the beneficial effects that:
The baffle plate is used for adjusting the shielding range of the air inlet, so that the size of the air inlet is adjusted, and the air inlet speed is controlled;
the rotating blades are driven to rotate by the rotating shaft, so that the nitrogen source circles around the material, the nitrogen source is fully contacted with the material, and the reaction speed is accelerated;
The hot gas passes through the spiral pipe, and is heated by the heat conduction of the spiral pipe, so that the material is preheated, the air outlet of the spiral pipe is closed through the cover plate, and the residence time of the hot gas in the spiral pipe is prolonged;
The invention can recycle hot gas, avoid energy waste and control the air inlet speed.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments.
example one
A method for preparing a nitride semiconductor material, comprising the steps of:
s1: placing a silicon substrate in an epitaxial reaction chamber, heating to 600 ℃ to remove a natural oxide layer on the surface of the silicon substrate, controlling the temperature to 400 ℃, introducing a nitrogen source to enable the surface of the silicon substrate to form a crystalline Si3N4 layer, controlling the gas flow through a control mechanism, introducing a nitrogen source through a flow guide mechanism, wherein the reaction chamber is provided with a gas inlet and a gas outlet, the gas inlet is provided with a baffle, the baffle is driven by an electric push rod, the range of the gas inlet is shielded by the baffle so as to adjust the size of the gas inlet, the gas inlet speed is controlled, the side edge of the baffle is provided with a scale which can accurately control the moving distance of the baffle, the flow guide mechanism comprises a rotating shaft and a rotating blade, the rotating shaft drives the rotating blade to rotate around the material so that the nitrogen source is fully contacted with the material, the rotating shaft is driven by a motor, the motor is, the rotating speed of the motor is controlled by the controller, the gas outlet is connected with one end of a spiral pipe, the spiral pipe is coiled on the outer side of the preheating box, hot gas passes through the spiral pipe and heats the preheating box through spiral pipe heat conduction, so that materials are preheated, the other end of the spiral pipe is rotatably provided with a cover plate, the cover plate and the spiral pipe are connected with the same spring, when the hot gas in the spiral pipe is less, the gas outlet of the spiral pipe is closed through the cover plate, the retention time of the hot gas in the spiral pipe is prolonged, when the hot gas is more, the cover plate is jacked up by air pressure, the hot gas is discharged, the cover plate is closed again through the spring, the gas outlet of the spiral pipe is connected with a cooler, the cooler cools the gas, the purifier is connected with a purifier, the purifier purifies the gas, the environment is prevented from being polluted, a heater, the temperature detector is arranged in the reaction chamber, the heater, the temperature sensor and the controller are electrically connected, the temperature in the reaction chamber is detected through the temperature sensor, when the temperature is higher than a set value, the controller controls the heater to be closed, and when the temperature is lower than the set value, the controller controls the heater to be opened;
s2: introducing an aluminum source at the temperature of 400 ℃, converting the crystalline Si3N4 layer into an AlN nucleating layer, and epitaxially growing a nitride semiconductor material on the AlN nucleating layer;
S3: recovering hot gas formed by heating, and preheating the material;
S4: the prepared nitride semiconductor material was examined.
example two
a method for preparing a nitride semiconductor material, comprising the steps of:
S1: placing a silicon substrate in an epitaxial reaction chamber, heating to 800 ℃ to remove a natural oxide layer on the surface of the silicon substrate, controlling the temperature to 800 ℃, introducing a nitrogen source to enable the surface of the silicon substrate to form a crystalline Si3N4 layer, controlling the gas flow through a control mechanism, introducing a nitrogen source through a flow guide mechanism, wherein the reaction chamber is provided with a gas inlet and a gas outlet, the gas inlet is provided with a baffle, the baffle is driven by an electric push rod, the range of the gas inlet is shielded by the baffle so as to adjust the size of the gas inlet, the gas inlet speed is controlled, the side edge of the baffle is provided with a scale which can accurately control the moving distance of the baffle, the flow guide mechanism comprises a rotating shaft and a rotating blade, the rotating shaft drives the rotating blade to rotate around the material so that the nitrogen source is fully contacted with the material, the rotating shaft is driven by a motor, the motor is, the rotating speed of the motor is controlled by the controller, the gas outlet is connected with one end of a spiral pipe, the spiral pipe is coiled on the outer side of the preheating box, hot gas passes through the spiral pipe and heats the preheating box through spiral pipe heat conduction, so that materials are preheated, the other end of the spiral pipe is rotatably provided with a cover plate, the cover plate and the spiral pipe are connected with the same spring, when the hot gas in the spiral pipe is less, the gas outlet of the spiral pipe is closed through the cover plate, the retention time of the hot gas in the spiral pipe is prolonged, when the hot gas is more, the cover plate is jacked up by air pressure, the hot gas is discharged, the cover plate is closed again through the spring, the gas outlet of the spiral pipe is connected with a cooler, the cooler cools the gas, the purifier is connected with a purifier, the purifier purifies the gas, the environment is prevented from being polluted, a heater, the temperature detector is arranged in the reaction chamber, the heater, the temperature sensor and the controller are electrically connected, the temperature in the reaction chamber is detected through the temperature sensor, when the temperature is higher than a set value, the controller controls the heater to be closed, and when the temperature is lower than the set value, the controller controls the heater to be opened;
S2: introducing an aluminum source at the temperature of 1000 ℃, converting the crystalline Si3N4 layer into an AlN nucleating layer, and epitaxially growing a nitride semiconductor material on the AlN nucleating layer;
S3: recovering hot gas formed by heating, and preheating the material;
S4: the prepared nitride semiconductor material was examined.
EXAMPLE III
A method for preparing a nitride semiconductor material, comprising the steps of:
S1: placing a silicon substrate in an epitaxial reaction chamber, heating to 1100 ℃ to remove a natural oxide layer on the surface of the silicon substrate, controlling the temperature to 1100 ℃, introducing a nitrogen source to enable the surface of the silicon substrate to form a crystalline Si3N4 layer, controlling the gas flow through a control mechanism, introducing a nitrogen source through a flow guide mechanism, wherein the reaction chamber is provided with a gas inlet and a gas outlet, the gas inlet is provided with a baffle, the baffle is driven by an electric push rod, the range of the gas inlet is shielded by the baffle so as to adjust the size of the gas inlet, the gas inlet speed is controlled, the side edge of the baffle is provided with a scale which can accurately control the moving distance of the baffle, the flow guide mechanism comprises a rotating shaft and a rotating blade, the rotating shaft drives the rotating blade to rotate around the material so that the nitrogen source is fully contacted with the material, the rotating shaft is driven by a motor, the motor is, the rotating speed of the motor is controlled by the controller, the gas outlet is connected with one end of a spiral pipe, the spiral pipe is coiled on the outer side of the preheating box, hot gas passes through the spiral pipe and heats the preheating box through spiral pipe heat conduction, so that materials are preheated, the other end of the spiral pipe is rotatably provided with a cover plate, the cover plate and the spiral pipe are connected with the same spring, when the hot gas in the spiral pipe is less, the gas outlet of the spiral pipe is closed through the cover plate, the retention time of the hot gas in the spiral pipe is prolonged, when the hot gas is more, the cover plate is jacked up by air pressure, the hot gas is discharged, the cover plate is closed again through the spring, the gas outlet of the spiral pipe is connected with a cooler, the cooler cools the gas, the purifier is connected with a purifier, the purifier purifies the gas, the environment is prevented from being polluted, a heater, the temperature detector is arranged in the reaction chamber, the heater, the temperature sensor and the controller are electrically connected, the temperature in the reaction chamber is detected through the temperature sensor, when the temperature is higher than a set value, the controller controls the heater to be closed, and when the temperature is lower than the set value, the controller controls the heater to be opened;
S2: introducing an aluminum source at the temperature of 1400 ℃, converting the crystalline Si3N4 layer into an AlN nucleating layer, and epitaxially growing a nitride semiconductor material on the AlN nucleating layer;
S3: recovering hot gas formed by heating, and preheating the material;
s4: the prepared nitride semiconductor material was examined.
The method for manufacturing a nitride semiconductor material according to the first, second, and third embodiments can recycle hot gas, avoid waste of energy, and control the gas inlet speed, and the second embodiment is the best embodiment.
the above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (10)
1. A method for preparing a nitride semiconductor material, comprising the steps of:
s1: placing the silicon substrate in an epitaxial reaction chamber, heating to remove a natural oxide layer on the surface of the silicon substrate, controlling the gas flow through a control mechanism, and introducing a nitrogen source through a flow guide mechanism to form a crystalline Si3N4 layer on the surface of the silicon substrate;
S2: introducing an aluminum source, converting the crystalline Si3N4 layer into an AlN nucleating layer, and epitaxially growing a nitride semiconductor material on the AlN nucleating layer;
s3: recovering hot gas formed by heating, and preheating the material;
s4: the prepared nitride semiconductor material was examined.
2. The method according to claim 1, wherein in step S1, the reaction chamber has an air inlet and an air outlet, the air inlet has a baffle plate, the baffle plate is driven by the electric push rod, the baffle plate covers the air inlet to adjust the size of the air inlet and control the air inlet speed, and the side of the baffle plate has a scale to precisely control the moving distance of the baffle plate.
3. The method according to claim 1, wherein said flow guide mechanism comprises a rotating shaft and a rotating blade, the rotating shaft rotates the rotating blade to cause the nitrogen source to swirl around the periphery of the material so that the nitrogen source is substantially in contact with the material, the rotating shaft is driven by a motor, the motor is controlled by a controller, and the controller is programmable to control the rotation speed of the motor by the controller.
4. The method as claimed in claim 1, wherein in S1, the silicon substrate is placed in an epitaxial reactor, heated to 600-1100 ℃ to remove the native oxide layer on the surface, and then the temperature is controlled to 400-1100 ℃ and nitrogen source is introduced to form a crystalline Si3N4 layer on the surface of the silicon substrate.
5. the method as claimed in claim 1, wherein in S2, an aluminum source is introduced at a temperature of 400-1400 ℃ to convert the crystalline Si3N4 layer into an AlN nucleation layer, and the nitride semiconductor material is epitaxially grown on the AlN nucleation layer.
6. the method for preparing a nitride semiconductor material according to claim 2, wherein the gas outlet is connected to one end of a spiral tube wound around the outside of the preheating chamber, and hot gas passes through the spiral tube to heat the preheating chamber by conduction of heat through the spiral tube, thereby preheating the material.
7. the method according to claim 6, wherein a cover plate is rotatably installed at the other end of the spiral tube, the same spring is connected to the cover plate and the spiral tube, when there is less hot gas in the spiral tube, the gas outlet of the spiral tube is closed by the cover plate to increase the retention time of the hot gas in the spiral tube, when there is more hot gas, the cover plate is lifted by the gas pressure, the hot gas is discharged, and the spiral tube is closed again by the spring.
8. the method according to claim 6, wherein a cooler is connected to an outlet of the spiral tube, the cooler cools the gas, and a purifier is connected to the cooler and purifies the gas to prevent environmental pollution.
9. the method according to claim 1, wherein in S1, a heater is provided in the reaction chamber for raising the temperature.
10. the method as claimed in claim 1, wherein in S1, a temperature sensor is disposed in the reaction chamber, the heater, the temperature sensor and the controller are electrically connected, the temperature sensor detects the temperature in the reaction chamber, the controller controls the heater to be turned off when the temperature is higher than a predetermined value, and the controller controls the heater to be turned on when the temperature is lower than the predetermined value.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116815306A (en) * | 2023-07-10 | 2023-09-29 | 江苏汉印机电科技股份有限公司 | Surface deposition device for silicon carbide epitaxial wafer |
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Application publication date: 20191206 |