CN116810659A - Preparation method of metal-bonded diamond porous semiconductor thinning grinding wheel - Google Patents
Preparation method of metal-bonded diamond porous semiconductor thinning grinding wheel Download PDFInfo
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- CN116810659A CN116810659A CN202310881716.6A CN202310881716A CN116810659A CN 116810659 A CN116810659 A CN 116810659A CN 202310881716 A CN202310881716 A CN 202310881716A CN 116810659 A CN116810659 A CN 116810659A
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- metal
- grinding wheel
- abrasive
- powder
- diamond
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- 238000000227 grinding Methods 0.000 title claims abstract description 69
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 59
- 239000010432 diamond Substances 0.000 title claims abstract description 59
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
- 239000002184 metal Substances 0.000 claims abstract description 66
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 39
- 238000005245 sintering Methods 0.000 claims abstract description 31
- 239000007767 bonding agent Substances 0.000 claims abstract description 25
- 239000011159 matrix material Substances 0.000 claims abstract description 17
- 238000012545 processing Methods 0.000 claims abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001257 hydrogen Substances 0.000 claims abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 8
- 238000012805 post-processing Methods 0.000 claims abstract description 8
- 239000011230 binding agent Substances 0.000 claims description 39
- 239000000843 powder Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 18
- 238000005054 agglomeration Methods 0.000 claims description 18
- 230000002776 aggregation Effects 0.000 claims description 18
- 238000002156 mixing Methods 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 claims description 15
- 230000001070 adhesive effect Effects 0.000 claims description 15
- 239000002994 raw material Substances 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 13
- 239000005011 phenolic resin Substances 0.000 claims description 13
- 229920001568 phenolic resin Polymers 0.000 claims description 13
- 239000011265 semifinished product Substances 0.000 claims description 13
- 238000007873 sieving Methods 0.000 claims description 12
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 8
- 238000004321 preservation Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 238000000498 ball milling Methods 0.000 claims description 6
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical class [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 6
- 239000012153 distilled water Substances 0.000 claims description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229930003836 cresol Natural products 0.000 claims description 5
- 229940057995 liquid paraffin Drugs 0.000 claims description 5
- 239000011780 sodium chloride Substances 0.000 claims description 5
- -1 titanium hydride Chemical compound 0.000 claims description 5
- 229910000048 titanium hydride Inorganic materials 0.000 claims description 5
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 4
- 239000004202 carbamide Substances 0.000 claims description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000652 nickel hydride Inorganic materials 0.000 claims description 4
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 claims description 3
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 claims description 3
- 235000012538 ammonium bicarbonate Nutrition 0.000 claims description 3
- 239000001099 ammonium carbonate Substances 0.000 claims description 3
- UGFMBZYKVQSQFX-UHFFFAOYSA-N para-methoxy-n-methylamphetamine Chemical compound CNC(C)CC1=CC=C(OC)C=C1 UGFMBZYKVQSQFX-UHFFFAOYSA-N 0.000 claims description 3
- 238000005219 brazing Methods 0.000 claims description 2
- 125000000853 cresyl group Chemical group C1(=CC=C(C=C1)C)* 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 4
- 239000000654 additive Substances 0.000 claims 1
- 230000000996 additive effect Effects 0.000 claims 1
- 238000003754 machining Methods 0.000 abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
- 238000003466 welding Methods 0.000 abstract 2
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 10
- 239000011148 porous material Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 239000003082 abrasive agent Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005553 drilling Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000011325 microbead Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000012216 screening Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910052987 metal hydride Inorganic materials 0.000 description 2
- 150000004681 metal hydrides Chemical class 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000012188 paraffin wax Substances 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 1
- 229910001626 barium chloride Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0072—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using adhesives for bonding abrasive particles or grinding elements to a support, e.g. by gluing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
The invention belongs to the technical field of abrasive grinding tools, and particularly relates to a preparation method of a metal-bonded diamond porous semiconductor thinning grinding wheel; the preparation method comprises the steps of preparing materials of an abrasive layer, forming blocks, sintering and processing the blocks, bonding or welding the blocks and a matrix, and obtaining the porous high-strength metal-bonded diamond thinning grinding wheel after post-processing treatment. Adopting original hydrogen to reduce presintered metal bonded abrasive, and optimally selecting metal bonding agent and pore-forming agent; the prepared material is sintered in a vacuum furnace at 600-900 ℃ after being pressed and molded, and the porous high-strength metal bond diamond grinding wheel is obtained after bonding or welding the matrix and machining. The performance of the grinding wheel in the application of semiconductor thinning such as SiC wafer thinning, sapphire thinning and monocrystalline silicon thinning exceeds the service performance of the existing grinding wheel.
Description
Technical Field
The invention belongs to the technical field of abrasive grinding tools, and particularly relates to a preparation method of a metal-bonded diamond porous semiconductor thinning grinding wheel.
Background
With the rapid development of material science and technology, novel materials are widely developed and widely applied in engineering, wherein the materials comprise difficult-to-process materials with high hardness, high brittleness and easy burn, such as monocrystalline silicon carbide wafers, monocrystalline silicon wafers and other semiconductor materials; the wafer thinning grinding wheel plays an important role in the chip preparation process: the whole thickness of the chip can be reduced through a thinning process, and heat dissipation and integration are facilitated; and secondly, by reducing the thickness and the surface roughness of the damaged layer on the surface of the wafer, the internal stress caused by each working procedure before thinning is released, and the collapse degree of a single chip in the dicing process is reduced.
However, in the grinding process using semiconductor materials such as silicon carbide and silicon, the resin binder (mainly phenolic resin) is used as a common grinding wheel binding material, which is not suitable for being used in a diamond grinding tool with superfine granularity, on one hand, the heat generated by grinding is not easy to be dissipated due to poor heat conduction of the resin material; on the other hand, the holding force of the resin bond on the diamond is lower, and when the diamond particle size is smaller, the resin bond diamond grinding wheel needs a denser structure to ensure a certain holding force on the diamond, but the porosity of the grinding wheel is reduced, and the abrasion ratio is increased. Therefore, in order to truly solve the problem of difficult processing of the novel material, the bottleneck of the traditional processing technology is broken through, and the key is to develop a novel processing tool and a novel material.
Disclosure of Invention
The invention aims to provide a preparation method of a metal-bonded diamond porous semiconductor thinning grinding wheel, which aims to solve the defects of difficult dressing and sharpening of a traditional compact metal-bonded diamond grinding wheel, and in addition, the invention aims to solve the problems of dressing and self sharpening of the metal-bonded diamond grinding wheel by improving the porosity of the metal-bonded grinding wheel, improve the holding capacity of a bonding agent on the grinding wheel by a unique grinding material presintering technology, improve the strength of the grinding wheel and prolong the service life of the grinding wheel.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the preparation method of the metal-bonded diamond porous semiconductor thinning grinding wheel comprises the following steps:
step one, preparing materials of an abrasive layer: preparing a presintered abrasive; uniformly mixing the presintered abrasive, the metal binding agent, the pore-forming agent and the temporary binding agent in a three-dimensional mixer, and sieving for standby;
step two, forming of caking: pouring the spare abrasive layer material into a mould, placing the mould on a hydraulic press for machine press forming, and demoulding to obtain a agglomerated semi-finished product;
step three, sintering and processing of agglomeration: sintering the semi-finished product of the agglomeration in a vacuum sintering furnace, and cooling the semi-finished product of the agglomeration along with the furnace to obtain an agglomeration; putting the agglomerate into a water bath for cleaning, and fully drying for standby;
step four, the caking is connected with the matrix: solidifying, bonding or brazing the caking and the matrix through an organic adhesive;
step five, post-processing treatment; and obtaining the qualified grinding wheel with the grinding material layer tightly combined with the matrix.
Further, the pre-sintered abrasive is prepared as follows:
fully mixing diamond abrasive with metal powder by means of an organic adhesive phenolic resin liquid, wherein the diamond abrasive accounts for 80-90% of the total raw material mass, the metal powder accounts for 10-20% of the total raw material mass, and the phenolic resin liquid is additionally added in an amount of 5% of the total raw material mass; the evenly mixed materials are pressed and formed into a green body by a hydraulic press, and the pressure is 10-30 MPa; curing the blank for 1-3 h at 180 ℃ in a curing furnace; the solidified blank is preserved for 1 to 3 hours at the temperature of 300 ℃ by a hydrogen reduction furnace, and after cooling along with the furnace, the presintered abrasive is obtained after ball milling and sieving.
Preferably, the diamond abrasive is any one of diamond, nickel plating diamond and titanium plating diamond or any kind of diamond abrasive is mixed for use.
Preferably, the metal powder is a mixture of copper powder and tin powder, and the ratio of the copper powder to the tin powder is 1-2: 1.
further, the metal bonding agent comprises 0% -40% of copper-tin alloy powder, 30% -80% of copper powder, 1% -40% of tin powder, 0% -10% of silver powder, 0% -10% of lead powder and 0% -10% of nickel powder.
Further, the pore-forming agent comprises one or more of PMMA, sodium chloride, ammonium bicarbonate and urea, and is used by mixing titanium hydride or nickel hydride.
Further, the temporary bonding agent is one of cresol and liquid paraffin.
Specifically, in the first step, the adding amount is determined according to the volume ratio of the cavity of the fixed die forming die, 5-25% of presintered abrasive material with the volume ratio is added, 20-60% of metal bonding agent with the volume ratio is added, 20-60% of pore-forming agent with the volume ratio is added, and the temporary bonding agent is added according to 0.05% of the mass of the metal bonding agent;
specifically, the presintered abrasive is added with a temporary adhesive and mixed for 0.5 to 3 hours in a V-shaped mixer, then added with a metal binding agent and a pore-forming agent, and then mixed for 1 to 2 hours, and then screened for standby.
Specifically, in the third step, the agglomerated semi-finished product is placed in a vacuum sintering furnace at 600-900 DEG C
Sintering, wherein the heat preservation time is 10-120 min, and cooling along with the furnace to obtain the agglomeration. The agglomerate is put into a water bath kettle,
introducing flowing distilled water with constant temperature of 90 ℃ to clean for 1-3 h, and fully drying for later use.
The invention has the beneficial effects that:
1. the invention starts from the self material and microstructure of the grinding wheel abrasive layer, solves the problems of dressing and self-sharpening of the metal bond diamond grinding wheel by improving the porosity of the metal bond grinding wheel, improves the holding capacity of the bonding agent on the grinding wheel by the original pre-sintering technology of the grinding wheel, improves the strength of the grinding wheel and prolongs the service life of the grinding wheel; the metal hydride is added, and the principle that the metal hydride decomposes metal simple substance and hydrogen in a certain temperature range is utilized, so that the decomposed metal simple substance has extremely high activity, and the metal bond is promoted to form stronger holding force on the abrasive by chemical metallurgy.
2. According to the presintered abrasive, the metal powder and the diamond are combined preferentially in a crushing mode after sintering, so that the diamond abrasive is coated with the metal material, the presintered abrasive is favorable for tightly combining the subsequent abrasive and the grinding tool, and meanwhile, the strength of the grinding tool is improved.
3. According to the invention, the temporary bonding agent is firstly added into the diamond abrasive, and then the metal bonding agent and the pore-forming agent are added after being uniformly mixed, so that the metal bonding agent can better wrap the abrasive particles. The particle size of each component of the metal binding agent is consistent with that of the pore-forming agent, and natural accumulation of particles can be utilized to form accumulated pores, so that the porosity of the grinding wheel is improved, and the use of the pore-forming agent is reduced.
Detailed Description
The invention provides a preparation method of a metal-bonded diamond porous semiconductor thinning grinding wheel, which specifically comprises the following steps:
step one, preparing materials of an abrasive layer:
uniformly mixing the presintered abrasive, the metal binding agent, the pore-forming agent and the temporary binding agent in a three-dimensional mixer, and sieving for standby; specifically, the presintered abrasive is added with a temporary adhesive and mixed for 0.5 to 3 hours in a V-shaped mixer, then added with a metal binding agent and a pore-forming agent, and then mixed for 1 to 2 hours, and then screened for standby. According to the cavity volume ratio of the fixed die forming die, the presintered abrasive is added in an amount of 5-25% by volume ratio, the metal binder is added in an amount of 20-60% by volume ratio, the pore-forming agent is added in an amount of 20-60% by volume ratio, and the temporary binder is added in an amount of 0.05% by mass of the metal binder.
The specific preparation steps of the presintered abrasive material are as follows:
step 1.1, fully mixing diamond abrasive with metal powder by means of an organic adhesive phenolic resin liquid;
taking the total mass of the diamond abrasive and the metal powder as 100%, wherein the diamond abrasive is 80-90% of the total raw material mass, and the metal powder is 10-20% of the total raw material mass; the phenolic resin liquid accounts for 5% of the total mass of the raw materials in an externally-added mode.
The diamond abrasive comprises one or any of diamond, nickel-plated diamond and titanium-plated diamond, wherein the metal powder is copper powder and tin powder mixture, and the ratio of the copper powder to the tin powder is 1-2: 1.
step 1.2, the evenly mixed materials are pressed and formed into a green body by a hydraulic machine, and the pressure is 10-30 MPa; curing the blank for 1-3 h at 180 ℃ in a curing furnace; the solidified blank is preserved for 1 to 3 hours at the temperature of 300 ℃ by a hydrogen reduction furnace, and after cooling along with the furnace, the presintered abrasive is obtained after ball milling and sieving.
The metal bond is composed of, by mass, 0% -40% of copper-tin alloy powder, 30% -80% of copper powder, 1% -40% of tin powder, 0% -10% of silver powder, 0% -10% of lead powder and 0% -10% of nickel powder.
The pore-forming agent comprises one or more of PMMA, sodium chloride, barium chloride, ammonium bicarbonate and urea, and titanium hydride or nickel hydride.
The temporary bonding agent is one of cresol, liquid paraffin and the like. The temporary bonding agent is firstly added into the diamond abrasive, and then the metal bonding agent and the pore-forming agent are added after being uniformly mixed, so that the metal bonding agent can better wrap the abrasive particles.
Preferably, the particle sizes of the components of the metal binding agent are consistent and the same as those of the pore-forming agent, and natural accumulation of the particles can be utilized to form accumulated pores, so that the porosity of the grinding wheel is improved, and the use of the pore-forming agent is reduced.
Step two, forming of caking:
pouring the material of the abrasive layer into a mould, placing the mould on a press for press molding, wherein the molding pressure is 20-100 MPa, and demoulding to obtain a agglomerated semi-finished product.
Step three, sintering and processing of agglomeration:
sintering the semi-finished product of the agglomerate in a vacuum sintering furnace at 600-900 ℃ for 10-120 min, and cooling along with the furnace to obtain the agglomerate. Putting the agglomerate into a water bath, introducing flowing distilled water with constant temperature of 90 ℃ for cleaning for 1-3 h, and fully drying for later use.
Step four, the caking is connected with the matrix:
the caking and the matrix are solidified and bonded or soldered by an organic adhesive, and the matrix is made of aviation aluminum.
Step five, post-processing treatment:
the post-processing treatment comprises the processing procedures of rough grinding, finish turning, sharpening, drilling, marking and the like.
The invention is further described in connection with specific embodiments, but the invention is not limited to these examples, any freely combined embodiments according to the invention being within the scope of protection.
Example 1
The preparation method of the metal-bonded diamond porous semiconductor thinning grinding wheel specifically comprises the following steps:
step one, preparing materials of an abrasive layer:
uniformly mixing the presintered abrasive, the metal binding agent, the pore-forming agent and the temporary binding agent in a three-dimensional mixer, and sieving for standby; wherein the presintered abrasive material accounts for 10 percent of the volume of the cavity of the die, the metal bonding agent accounts for 40 percent of the volume, and the pore-forming agent accounts for 50 percent of the volume; the addition amount of the temporary binder is 0.05% of the mass of the metal bond.
The presintered abrasive is prepared by the following steps:
according to the proportioning data in Table 1, firstly weighing diamond, adding phenolic resin liquid accounting for 5% of the total mass of the raw materials, pre-mixing, and then adding copper powder and tin powder for continuous and uniform mixing; the details of table 1 are shown below.
| Raw materials | Diamond | Copper powder | Tin powder | Phenolic resin liquid |
| Mass ratio | 80％ | 12％ | 8％ | Plus 5% |
The evenly mixed materials are pressed and formed into a green body by a hydraulic machine, and the pressure is 10MPa; curing the blank for 1h at 180 ℃ in a curing furnace; the solidified blank is kept at 300 ℃ for 3 hours by a hydrogen reduction furnace, and after cooling along with the furnace, the blank is subjected to ball milling and screening by a 270/325 mesh sieve to obtain the presintered abrasive.
The metal bonding agent adopts copper-tin alloy powder with the mass ratio of 30%, copper powder with the mass ratio of 30%, tin powder with the mass ratio of 20%, iron powder with the mass ratio of 5%, lead powder with the mass ratio of 5% and nickel powder with the mass ratio of 5%, and the volume ratio of the metal bonding agent is 40%. The granularity of the metal bond powder is 325/400 mesh.
The pore-forming agent adopts PMMA microbeads with the volume ratio of 20 percent, sodium chloride powder with the volume ratio of 25 percent and titanium hydride powder with the volume ratio of 5 percent as the pore-forming agent. The particle size of the pore-forming agent is 325/400 mesh.
The temporary binder is cresol, and the addition amount of the temporary binder is 0.05% of the mass of the metal binder.
According to the preferable scheme of the presintered abrasive, the metal bond, the pore-forming agent and the temporary binder, the preparation mode of the specific abrasive layer material is as follows:
adding the presintered abrasive into the temporary adhesive cresol, mixing for 0.5h in a V-shaped mixer, adding the metal binding agent and the pore-forming agent, mixing for 2h, and sieving with a 100# sieve for standby.
Step two, forming of caking:
pouring the material of the abrasive layer into a mould, placing the mould on a press machine for press forming, wherein the press machine adopts a four-column hydraulic press machine, the forming pressure is 40Mpa, the mould is reversely demoulded after pressure maintaining is carried out for 1min, and the agglomerated semi-finished product is obtained after demoulding.
Step three, sintering and processing of agglomeration:
sintering by adopting a vacuum sintering furnace, wherein the sintering temperature is 700 ℃, the heat preservation time is 30min, the agglomeration is obtained after the heat preservation and furnace cooling, and the data of the sintering process are shown in Table 2, and the table 2 is shown below. And (3) putting the agglomerate into a water bath, introducing flowing distilled water with the constant temperature of 90 ℃ for cleaning for 2 hours, and fully drying for later use.
| Normal temperature to 300 DEG C | 30min |
| 300℃～300℃ | 60min |
| 300℃～700℃ | 120min |
| 700℃～700℃ | 30min |
| 700-normal temperature | Furnace cooling |
The open porosity of the agglomerates obtained by the detection was 52%, the pore size distribution was 10 to 60. Mu.m, and specific physical properties of the agglomerates are shown in Table 3, and Table 3 below.
Step four, the caking is connected with the matrix:
the caking is required to be processed by a machine to obtain qualified caking with consistent size; the caking is bonded and connected with the aviation aluminum matrix by adopting structural adhesive, and is cured for 24 hours at normal temperature.
Step five, post-processing treatment:
the finished product grinding wheel is obtained by adopting machining procedures such as rough grinding, finish turning, sharpening, drilling, marking and the like. The trial performance of the comparative test finished grinding wheel is shown in table 4, and table 4 shows that the finished grinding wheel obtained by the preparation method of the invention has better performance.
Example 2
The preparation method of the metal-bonded diamond porous semiconductor thinning grinding wheel specifically comprises the following steps:
step one, preparing materials of an abrasive layer:
uniformly mixing the presintered abrasive, the metal binding agent, the pore-forming agent and the temporary binding agent in a three-dimensional mixer, and sieving for standby; wherein the presintered abrasive material accounts for 8% of the volume of the cavity of the die, the metal bonding agent accounts for 32% of the volume, and the pore-forming agent accounts for 60% of the volume; the addition amount of the temporary binder is 0.05% of the mass of the metal bond.
The presintered abrasive is prepared by the following steps:
according to the proportions shown in Table 5, the titanized diamond was weighed first, a phenolic resin solution accounting for 5% of the total mass of the raw materials was added, and the mixture was premixed, and then copper powder and tin powder were added to the mixture to be mixed uniformly, as shown in Table 5.
| Raw materials | Titanized diamond | Copper powder | Tin powder | Phenolic resin liquid |
| Mass ratio | 90％ | 5％ | 5％ | Plus 5% |
The evenly mixed materials are pressed and formed into a green body by a hydraulic machine, and the pressure is selected to be 30MPa; curing the blank for 3 hours at 180 ℃ in a curing furnace; the solidified blank is kept at 300 ℃ for 1h by a hydrogen reduction furnace, and after cooling along with the furnace, the blank is subjected to ball milling and screening by a 270/325 mesh sieve to obtain the presintered abrasive.
The metal bond adopts 40% of copper-tin alloy powder, 15% of copper powder, 20% of tin powder, 10% of iron powder, 3% of silver powder and 2% of nickel powder in percentage by volume of 32%. The granularity of the metal bond powder is 325/400 mesh.
The pore-forming agent adopts PMMA microbeads with the volume ratio of 5 percent, sodium chloride powder with the volume ratio of 45 percent and nickel hydride powder with the volume ratio of 10 percent as the pore-forming agent. The particle size of the pore-forming agent is 325/400 mesh.
The temporary binder is liquid paraffin, and the addition amount of the temporary binder is 0.05% of the mass of the metal binding agent.
According to the preferable scheme of the presintered abrasive, the metal bond, the pore-forming agent and the temporary binder, the preparation mode of the specific abrasive layer material is as follows:
adding the presintered abrasive into the temporary adhesive paraffin, mixing for 1h in a V-shaped mixer, adding the metal binding agent and the pore-forming agent, continuously mixing for 1.5h, and sieving with a 100# sieve for later use.
Step two, forming of caking:
pouring the material of the abrasive layer into a mould, placing the mould on a press machine for press forming, wherein the press machine adopts a four-column hydraulic press machine, the forming pressure is 60Mpa, the mould is reversely demoulded after pressure maintaining is carried out for 1min, and the agglomerated semi-finished product is obtained after demoulding.
Step three, sintering and processing of agglomeration:
sintering by adopting a vacuum sintering furnace, wherein the sintering temperature is 650 ℃, the heat preservation time is 30min, the agglomeration is obtained after the heat preservation and furnace cooling, the sintering process is shown in Table 6, and the specific contents of Table 6 are shown below. And (3) putting the agglomerate into a water bath, introducing flowing distilled water with the constant temperature of 90 ℃ for cleaning for 2 hours, and fully drying for later use.
The open porosity of the agglomerate obtained by the test was 56%, the pore size distribution was 10 to 60. Mu.m, and specific physical properties of the agglomerate are shown in Table 7, and the specific contents of Table 7 are shown below.
| Open porosity | 56 |
| Sand blasting hardness (28 sand chamber, 0.15 MPa) | 1.4 (the smaller the number, the greater the hardness) |
| Pore size distribution | 10～60μm |
Step four, the caking is connected with the matrix:
the caking is required to be processed by a machine to obtain qualified caking with consistent size; the caking is bonded and connected with the aviation aluminum matrix by adopting structural adhesive, and is cured for 24 hours at normal temperature.
Step five, post-processing treatment:
the finished product grinding wheel is obtained by adopting machining procedures such as rough grinding, finish turning, sharpening, drilling, marking and the like. The trial performance of the comparative test finished grinding wheel is shown in Table 8, and the concrete contents of Table 8 are shown below, so that the finished grinding wheel obtained by the preparation method of the invention has better performance.
Example 3
The preparation method of the metal-bonded diamond porous semiconductor thinning grinding wheel specifically comprises the following steps:
step one, preparing materials of an abrasive layer:
uniformly mixing the presintered abrasive, the metal binding agent, the pore-forming agent and the temporary binding agent in a three-dimensional mixer, and sieving for standby; wherein the presintered abrasive material accounts for 10 percent of the volume of the cavity of the die, the metal bonding agent accounts for 55 percent of the volume, and the pore-forming agent accounts for 35 percent of the volume; the addition amount of the temporary binder is 0.05% of the mass of the metal bond.
The presintered abrasive is prepared by the following steps:
according to the proportions shown in Table 9, nickel-plated diamond was weighed first, a phenolic resin solution was added in an amount of 5% of the total mass of the raw materials, and the mixture was pre-mixed, and then copper powder and tin powder were added and mixed uniformly, as shown in Table 9.
| Raw materials | Nickel plating diamond | Copper powder | Tin powder | Phenolic resin liquid |
| Mass ratio | 85％ | 10％ | 5％ | Plus 5% |
The evenly mixed materials are pressed and formed into a green body by a hydraulic machine, and the pressure is 20MPa; curing the blank for 2 hours at 180 ℃ in a curing furnace; the solidified blank is kept at 300 ℃ for 2 hours by a hydrogen reduction furnace, and after cooling along with the furnace, the blank is subjected to ball milling and screening by a 270/325 mesh sieve to obtain the presintered abrasive.
The metal bond adopts 40% of copper-tin alloy powder, 15% of copper powder, 20% of tin powder, 10% of iron powder, 3% of silver powder and 2% of nickel powder in percentage by volume, and the metal bond accounts for 55%. The granularity of the metal bond powder is 325/400 mesh.
The pore-forming agent adopts PMMA microbeads with the volume ratio of 5 percent, 25 percent of urea and 5 percent of titanium hydride powder as the pore-forming agent. The particle size of the pore-forming agent is 325/400 mesh.
The temporary binder is liquid paraffin, and the addition amount of the temporary binder is 0.05% of the mass of the metal binding agent.
According to the preferable scheme of the presintered abrasive, the metal bond, the pore-forming agent and the temporary binder, the preparation mode of the specific abrasive layer material is as follows:
adding the presintered abrasive into the temporary adhesive paraffin, mixing for 3 hours in a V-shaped mixer, adding the metal binding agent and the pore-forming agent, continuing mixing for 1 hour, and sieving with a 100# sieve for later use.
Step two, forming of caking:
pouring the material of the abrasive layer into a mould, placing the mould on a press machine for press forming, wherein the press machine adopts a four-column hydraulic press machine, the forming pressure is 80Mpa, the mould is reversely demoulded after pressure maintaining is carried out for 1min, and the agglomerated semi-finished product is obtained after demoulding.
Step three, sintering and processing of agglomeration:
sintering by adopting a vacuum sintering furnace, wherein the sintering temperature is 650 ℃, the heat preservation time is 30min, the agglomeration is obtained after the heat preservation and furnace cooling, the sintering process is shown in table 10, and the specific contents of table 10 are shown below. And (3) putting the agglomerate into a water bath, introducing flowing distilled water with the constant temperature of 90 ℃ for cleaning for 1h, and fully drying for later use.
| Normal temperature to 300 DEG C | 30min |
| 300℃～300℃ | 60min |
| 300℃～650℃ | 120min |
| 650℃～650℃ | 30min |
| 650 ℃ to normal temperature | Furnace cooling |
The obtained agglomerate obtained by the detection had an open porosity of 34% and a pore size distribution of 10 to 60. Mu.m, and specific physical properties of the agglomerate are shown in Table 11, and the details of Table 11 are shown below.
| Open porosity | 34 |
| Sand blasting hardness (28 sand chamber, 0.15 MPa) | 0.6 (the smaller the number, the greater the hardness) |
| Pore size distribution | 10～60μm |
Step four, the caking is connected with the matrix:
the caking is required to be processed by a machine to obtain qualified caking with consistent size; the caking is bonded and connected with the aviation aluminum matrix by adopting structural adhesive, and is cured for 24 hours at normal temperature.
Step five, post-processing treatment:
the finished product grinding wheel is obtained by adopting machining procedures such as rough grinding, finish turning, sharpening, drilling, marking and the like. The trial performance of the comparative test finished grinding wheel is shown in table 12, and the concrete contents of table 12 are shown below, so that the finished grinding wheel obtained by the preparation method of the invention has better performance.
Claims (9)
1. The preparation method of the metal-bonded diamond porous semiconductor thinning grinding wheel is characterized by comprising the following steps of:
step one, preparing materials of an abrasive layer: preparing a presintered abrasive; uniformly mixing the presintered abrasive, the metal binding agent, the pore-forming agent and the temporary binding agent in a three-dimensional mixer, and sieving for standby;
step two, forming of caking: pouring the spare abrasive layer material into a mould, placing the mould on a hydraulic press for machine press forming, and demoulding to obtain a agglomerated semi-finished product;
step three, sintering and processing of agglomeration: sintering the semi-finished product of the agglomeration in a vacuum sintering furnace, and cooling the semi-finished product of the agglomeration along with the furnace to obtain an agglomeration; putting the agglomerate into a water bath for cleaning, and fully drying for standby;
step four, the caking is connected with the matrix: solidifying, bonding or brazing the caking and the matrix through an organic adhesive;
step five, post-processing treatment; and obtaining the qualified grinding wheel with the grinding material layer tightly combined with the matrix.
2. The method for preparing a metal-bonded diamond porous semiconductor thinning grinding wheel according to claim 1, wherein the pre-sintered grinding material is prepared by the following steps:
fully mixing diamond abrasive with metal powder by means of an organic adhesive phenolic resin liquid, wherein the diamond abrasive accounts for 80-90% of the total raw material mass, the metal powder accounts for 10-20% of the total raw material mass, and the phenolic resin liquid is additionally added by 5% of the total raw material mass; the evenly mixed materials are pressed and formed into a green body by a hydraulic press, and the pressure is 10-30 MPa; curing the blank for 1-3 h at 180 ℃ in a curing furnace; the solidified blank is preserved for 1 to 3 hours at the temperature of 300 ℃ by a hydrogen reduction furnace, and after cooling along with the furnace, the presintered abrasive is obtained after ball milling and sieving.
3. The method for manufacturing a metal-bonded diamond porous semiconductor thinning grinding wheel according to claim 2, wherein the diamond abrasive is any one of diamond, nickel-plated diamond, titanium-plated diamond or a mixture of any kinds.
4. The method for preparing the metal-bonded diamond porous semiconductor thinning grinding wheel according to claim 2, wherein the metal powder is a mixture of copper powder and tin powder, and the ratio of the copper powder to the tin powder is 1-2: 1.
5. the method for manufacturing a metal-bonded diamond porous semiconductor thinning grinding wheel according to claim 1, wherein the metal bonding agent comprises 0% -40% of copper-tin alloy powder, 30% -80% of copper powder, 1% -40% of tin powder, 0% -10% of silver powder, 0% -10% of lead powder and 0% -10% of nickel powder.
6. The method for preparing the metal-bonded diamond porous semiconductor thinning grinding wheel according to claim 1, wherein the pore-forming agent comprises one or more of PMMA, sodium chloride, ammonium bicarbonate and urea mixed with titanium hydride or nickel hydride.
7. The method for manufacturing a metal-bonded diamond porous semiconductor thinning grinding wheel according to claim 1, wherein the temporary bonding agent is cresol or liquid paraffin.
8. The method for manufacturing a metal-bonded diamond porous semiconductor thinning grinding wheel according to claim 1, wherein in the first step, the additive amount is determined by the cavity volume ratio of a fixed mold forming die, 5-25% by volume of presintered grinding material is added, 20-60% by volume of metal bonding agent is added, 20-60% by volume of pore-forming agent is added, and a temporary bonding agent is added by 0.05% by mass of the metal bonding agent; specifically, the presintered abrasive is added with a temporary adhesive and mixed for 0.5 to 3 hours in a V-shaped mixer, then added with a metal binding agent and a pore-forming agent, and then mixed for 1 to 2 hours, and then screened for standby.
9. The method for preparing the metal-bonded diamond porous semiconductor thinning grinding wheel according to claim 1, wherein in the third step, the semi-finished product of agglomeration is put into a vacuum sintering furnace for sintering at 600-900 ℃, the heat preservation time is 10-120 min, and agglomeration is obtained after cooling along with the furnace; putting the agglomerate into a water bath, introducing flowing distilled water with constant temperature of 90 ℃ for cleaning for 1-3 h, and fully drying for later use.
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