CN107398836B - A kind of bonding agent, semiconductor packages process ultra-thin grinding wheel and preparation method thereof - Google Patents
A kind of bonding agent, semiconductor packages process ultra-thin grinding wheel and preparation method thereof Download PDFInfo
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- CN107398836B CN107398836B CN201710625062.5A CN201710625062A CN107398836B CN 107398836 B CN107398836 B CN 107398836B CN 201710625062 A CN201710625062 A CN 201710625062A CN 107398836 B CN107398836 B CN 107398836B
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- 238000000227 grinding Methods 0.000 title claims abstract description 135
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000007767 bonding agent Substances 0.000 title claims abstract description 23
- 239000010410 layer Substances 0.000 claims abstract description 94
- 239000010432 diamond Substances 0.000 claims abstract description 75
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 75
- 239000002344 surface layer Substances 0.000 claims abstract description 71
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims abstract description 20
- 239000012792 core layer Substances 0.000 claims abstract description 13
- FQVNUZAZHHOJOH-UHFFFAOYSA-N copper lanthanum Chemical compound [Cu].[La] FQVNUZAZHHOJOH-UHFFFAOYSA-N 0.000 claims abstract description 11
- 150000004678 hydrides Chemical class 0.000 claims abstract description 11
- 229910000636 Ce alloy Inorganic materials 0.000 claims abstract description 10
- SKEYZPJKRDZMJG-UHFFFAOYSA-N cerium copper Chemical compound [Cu].[Ce] SKEYZPJKRDZMJG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 235000011164 potassium chloride Nutrition 0.000 claims abstract description 10
- 239000001103 potassium chloride Substances 0.000 claims abstract description 10
- 229910000858 La alloy Inorganic materials 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 6
- 238000005554 pickling Methods 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 16
- 238000005245 sintering Methods 0.000 claims description 15
- 229910052684 Cerium Inorganic materials 0.000 claims description 8
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 8
- 239000004576 sand Substances 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 238000000748 compression moulding Methods 0.000 claims description 6
- 238000001272 pressureless sintering Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000004575 stone Substances 0.000 claims 1
- 238000005520 cutting process Methods 0.000 abstract description 58
- 239000000843 powder Substances 0.000 description 44
- 238000012545 processing Methods 0.000 description 18
- 229920005989 resin Polymers 0.000 description 17
- 239000011347 resin Substances 0.000 description 17
- 239000010949 copper Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 238000007731 hot pressing Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 229910052582 BN Inorganic materials 0.000 description 11
- 229910000831 Steel Inorganic materials 0.000 description 11
- 239000010959 steel Substances 0.000 description 11
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 239000003595 mist Substances 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 8
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000010792 warming Methods 0.000 description 7
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 6
- 238000003475 lamination Methods 0.000 description 6
- 229920001568 phenolic resin Polymers 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 229910001651 emery Inorganic materials 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- -1 chipless lamination Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000004663 powder metallurgy Methods 0.000 description 4
- 230000007306 turnover Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 3
- 238000004321 preservation Methods 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000048 titanium hydride Inorganic materials 0.000 description 3
- 238000005303 weighing Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910016347 CuSn Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- B22F1/0003—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
- B24D3/10—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
- B24D3/342—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D5/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor
- B24D5/02—Wheels in one piece
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
The present invention relates to a kind of bonding agent, semiconductor packages to process ultra-thin grinding wheel and preparation method thereof, belongs to grinding tool technical field.Bonding agent of the invention be metallic bond, the component including following parts by weight: 30~40 parts of copper cerium alloys, 15~20 parts of copper lanthanum alloys and 5~16 parts of glass puttys, the titantium hydride of 2-4 parts by weight, 3-5 parts by weight potassium chloride.Grinding wheel of the invention includes sandwich layer and the surface layer that core layer surface is arranged in；Sandwich layer includes above-mentioned metallic bond and diamond.Metallic bond of the invention can improve the holding power to diamond in grinding wheel, improve the self-sharpening and cutting accuracy of grinding wheel.Grinding wheel of the invention has both the advantages of resinoid bond and metallic bond, has the characteristics that cut quality is excellent, rigidity is good, the good, long service life that is suitable for high-speed cutting, self-sharpening, can satisfy semiconductor packages high speed, accurate cutting demand.
Description
Technical field
The present invention relates to a kind of bonding agent, semiconductor packages to process ultra-thin grinding wheel and preparation method thereof, belongs to grinding tool skill
Art field.
Background technique
Terminal electronic product constantly pushes semiconductor to the pursuit of lighter, thinner, smaller, high reliability, low-power consumption
The development of encapsulation technology.For example, the encapsulation of one such chip package QFN (Quad Flat No-Leal) be quad flat without
Pin package is widely applied Novel high-end packing forms in the terminals class product such as mobile phone, digital camera in recent years.QFN
Chip is encapsulated as encapsulating products, is generally made of internal copper lead frame and external plastic compression resin base covering body, is composite wood
Expect structure.In modern large-scale industrial production, encapsulated simultaneously when QFN encapsulates chip manufacturing for multiple chips, subsequently through cutting
Process realizes chip singulation, the requirement to cut quality are as follows: without molten tin, chipless lamination, chip cutting chipping and core
Piece copper lead plucking size is less than specified value.QFN encapsulates the composite construction of chip, so that need when cutting while cutting off internal copper
Lead frame and external resin base inclusion enclave, however the ductility splendid due to copper product cause copper lead when cutting to be also easy to produce
Plucking is exceeded (being greater than pin spacing 1/4), causes chip rejection.
Currently, it is mainly resin bond wheel that QFN, which encapsulates chip cutting with grinding wheel,.This is because resinoid bond is wear-resisting
Property it is relatively poor so that grinding wheel self-sharpening is good, ensure that the excellent cutting power of grinding wheel, at the same resinoid bond have it is certain
Elasticity is also conducive to improve cut quality, finally can preferably meet the small lead plucking of chip, cutting cut quality such as chipping is small
Rigors.But resinoid bond abrasive cut-off wheel also has the shortcomings that more prominent: since bonding agent wears no resistance, so that grinding wheel is whole
Body life time is shorter, not only increases user cost, also can reduce production efficiency because frequently replacing grinding wheel；Grinding wheel rigidity, intensity compared with
It is low, in high-speed cutting, it is easy the heavy load caused by unbearable high-speed cutting due to breaking, therefore resin bond wheel is cut
It is often lower to cut speed, usually in 40mm/s or less.
Metal bonded wheel is since self-sharpening is poor, the disadvantage of density height, chip removal difficulty, when cutting QFN encapsulation chip,
Diamond passivation or wheel topography are easily caused, timely exposure is tended not to stylish cutting edge, leads to emery wheel cuts ability
Be greatly lowered, the copper lead plucking for cutting chip is serious, therefore at present metal bonded wheel it is rare have cutting QFN encapsulation core
The industrial applications of piece.But since metallic bond has good diamond holding power and wearability, wheel life is long, simultaneously
Grinding wheel rigidity, intensity are high, can bear biggish cutting loading, are suitable for high-speed cutting operating condition, and therefore, related technical personnel are also always
Carry out the relation technological researching of metallic bond QFN abrasive cut-off wheel.
In the prior art, CN101870008B discloses a kind of sintering metal base based on saw formula cutting QFN package substrate
Diamond saw blade, is made of diamond abrasive grain and metal matrix, and wherein metal matrix includes metal powder and inorganic filler, metal
Powder is by Cu powder or CuSn20Pre-alloyed powder, Sn powder and Co powder composition, inorganic filler is by SiC and Al2O3Composition, raw material are matched
After setting, through pre-molding, hot pressed sintering, inside and outside circle cutting, thickness be thinned etc. be processed into required metal-base diamond saw blade.
The standby saw blade of the patent system has the characteristics of intensity is high, wearability is good, long service life, but due to the self-sharpening of the grinding wheel still compared with
Difference, although metal bonded wheel intensity is preferable, its cutting speed is still limited, is 50mm/s or less.It is limited to metal knot simultaneously
The characteristic of mixture itself, cut quality and resin bond wheel have larger gap, are unable to satisfy the high-accuracy cutting in part
Using.
In the prior art, the patent of invention that application publication number is CN105798307A discloses a kind of based on IC package device
Cutting laminated metallic base diamond saw blade and manufacturing method.The patent points out that the saw blade is made of multiple single layer superimposions,
Single layer is divided into surface layer and sandwich layer according to saw blade construction, and each single layer is made of metal matrix and diamond abrasive, wherein surface layer
Diamond particles be less than the diamond particles size of sandwich layer, the diamond concentration on surface layer is greater than the diamond concentration of sandwich layer；Its
Middle metal matrix is mainly made of Cu, Sn and CuSn alloy, wherein the Sn content in surface layer is greater than the Sn content in sandwich layer.
Preparation method in the patent disclose through pre-molding, hot pressed sintering, inside and outside circle cutting, thickness be thinned etc. be processed into metal
Base diamond saw blade.It, should although the metal-base diamond saw blade, which makes its intensity to a certain extent by Multi-layer design, to be enhanced
The phenomenon that metal-base diamond saw blade cutting accuracy is poor, such as can cause flash during cutting, molten tin occurs, and cuts
Face is not smooth neat enough, can not meet higher machining accuracy, influences the performance of chip, there are applied defects.
Summary of the invention
The purpose of the present invention is to provide a kind of bonding agent, which can be improved the holding to diamond in grinding wheel
Power improves the self-sharpening and cutting accuracy of grinding wheel.
The object of the invention is also to provide a kind of semiconductor packages to process ultra-thin grinding wheel.
It is another object of the present invention to provide a kind of preparation methods of above-mentioned grinding wheel.
To achieve the goals above, the technical solution of bonding agent of the invention is as follows:
A kind of bonding agent, the bonding agent are metallic bond, and the component including following parts by weight: 30~40 parts of copper ceriums close
The potassium chloride of gold, 15~20 parts of copper lanthanum alloys, 5~16 parts of glass puttys, the titantium hydride of 2-4 parts by weight, 3-5 parts by weight.
The mass fraction of cerium is 5-8% in above-mentioned copper cerium alloy.The mass fraction of lanthanum is 10- in above-mentioned copper lanthanum alloy
15%.
The technical solution that semiconductor packages of the invention processes ultra-thin grinding wheel is as follows:
A kind of semiconductor packages processes ultra-thin grinding wheel, including sandwich layer and is arranged in the surface layer on two surfaces of sandwich layer；Institute
Stating sandwich layer includes metallic bond and sandwich layer diamond, and the metallic bond is above-mentioned metallic bond.
Rare-earth element cerium, lanthanum in metallic bond are uniformly distributed with alloyed state, can promote metallic bond
Sintering character improves the mechanical properties such as bonding agent bending strength and impact strength.In addition, rare-earth element cerium, lanthanum can also refine
The crystal grain of bonding agent keeps the combination of bonding agent and diamond even closer, is conducive to promote height of protrusion.
Titantium hydride in metallic bond is used as pyrolytic pore creating material in grinding wheel, and the initial decomposition temperature of titantium hydride is
400 DEG C or so, match with the sintering temperature of above-mentioned metallic bond.Titantium hydride can decompose in grinding wheel preparation sintering process
Hydrogen is discharged, makes to form porous structure in sintered grinding wheel sandwich layer.In general, the porosity of sandwich layer is 15-25%.
The fusing point of potassium chloride in metallic bond is 700 DEG C, will not be sent out under the sintering temperature of above-mentioned metallic bond
Changing only occupies node location in grinding wheel sandwich layer.But potassium chloride is soluble easily in water, in grinding wheel use process, outside grinding wheel
The potassium chloride of circular portion touches cutting cooling water, can be quickly dissolved in water and form hole, further increase the porosity of grinding wheel.Drop
Low dense structure's degree of metallic bond, thereby reduces the wearability of bonding agent, improves the sharpness of grinding wheel, realize
Diamond from sharp.In addition, the hole of grinding wheel plays the role of holding bits simultaneously, chip removal is difficult when solving grinding wheel high-speed cutting
The problem of.
The pore-creating effect of titantium hydride and potassium chloride combines, and reduces dense structure's degree of metallic bond jointly, in turn
Reduce the wearability of bonding agent and the holding power to diamond abrasive, improve grinding wheel sharpness, realize sandwich layer from sharp.
The rate of depreciation on the surface layer after the raising of sandwich layer and wearability after wearability reduces in the present invention matches well, common guarantee sand
Take turns whole shape retention.
The content of diamond can be arranged depending on cutting object in sandwich layer, in general, the sandwich layer center core layer diamond
Mass percent is 5-10%.
Sandwich layer diamond is diamond particles in the prior art.In general, the granularity of the sandwich layer diamond is 200-
230 mesh, 230-270 mesh, 270-325 mesh or 325-400 mesh.
The thickness precision of above-mentioned sandwich layer is ± 0.002mm.
Above-mentioned core layer thickness accounts for the 1/4-1/2 of grinding wheel overall thickness.
The ingredient on the surface layer on above-mentioned two surfaces of sandwich layer is identical.
Above-mentioned sandwich layer is metal anchoring agent diamond wheel layer, and surface layer is resin anchoring agent diamond grinding wheel layer.
Above-mentioned surface layer includes the component of following parts by weight: 55-65 parts of phenolic resin or epoxy resin, 10-15 parts of carbon
Change tungsten, 3-6 parts of cubic boron nitrides, surface layer diamond.The mass fraction of surface layer diamond is 50%-60% in surface layer.
The surface layer of grinding wheel of the present invention is based on the good self-sharpening of resinoid bond and elastic characteristic, can buffer to having cut
Effect, help to obtain splendid cut quality, realizes semiconductor packaging chip, when especially QFN is cut copper lead plucking it is small,
The problems such as cutting chipping is small, while tin, chip plucking are melted in the tin part that also can avoid cutting chip surface layer.Meanwhile the carbon of introducing
Change tungsten powder, cubic boron nitride micro mist all have very high hardness, in conjunction with high concentration diamond, can effectively improve the wear-resisting of surface layer
Property, wheel life is improved, is more matched with the rate of depreciation of sandwich layer, is also conducive to keep grinding wheel side view.
Above-mentioned surface layer diamond be grain size number be 200-230 mesh, grain size number is 230-270 mesh, grain size number is 270-325 mesh
And grain size number is one of the diamond of 325-400 mesh.
" 6406-1996 super hard abrasive diamond of GB/T or cubic boron nitride are pressed in the conversion corresponding with granularity of above-mentioned grain size number
Particle size " it calculates.Specifically, above-mentioned surface layer diamond be granularity D1 be 63-75um, granularity D2 is 53-63um, granularity D3 is
45-53um and granularity D4 is one of the diamond of 38-45um.
The surface layer includes resinoid bond and surface layer diamond, partial size and the surface layer diamond of the sandwich layer diamond
Partial size is equal.
The granularity of tungsten carbide in surface layer is 38-45 μm.The granularity of cubic boron nitride micro mist is 10-20 μm.Tungsten carbide with
The granularity thickness of cubic boron nitride is arranged in pairs or groups, and is complemented one another.
Above-mentioned sandwich layer is porous structure；The porosity of sandwich layer is 15-25%.Grinding wheel hole plays the work for holding bits simultaneously
With solving the problems, such as when grinding wheel high-speed cutting that chip removal is difficult.
The preparation method of above-mentioned grinding wheel includes the following steps:
1) metallic bond is uniformly mixed with diamond raw material, compression moulding obtains green wheel；
2) by green wheel temperature be 520-650 DEG C at pressureless sintering 30-50min, obtain grinding wheel blank；
3) by the pickling of grinding wheel blank to get.
The compression moulding is the pressure maintaining 2-4s at 75-90MPa.
The green wheel rises to sintering temperature with the heating rate of 100 DEG C/h.
Above-mentioned sintering is carried out in Muffle furnace.
Pressureless sintering is sintered in above-mentioned sandwich layer preparation process.It realizes bonding agent powder metallurgy, while making titantium hydride
Powder de-agglomeration leaves the uniform hole of pore size Uniformly distributed in sandwich layer.
Room temperature is naturally cooled to after the completion of above-mentioned sintering.
Grinding wheel blank in step 3) carries out Double End attrition process, after grinding, grinding wheel thickness dimensional accuracy before pickling
Control ± 0.002mm.
Grinding wheel blank after above-mentioned grinding carries out inside and outside circle processing, and outer diameter is made and is less than steel mold type used in step 1)
Chamber outer diameter 0.05mm-0.1mm, internal diameter are greater than the sandwich layer of the intracavitary diameter 0.05mm-0.1mm of steel mold type.
Acid solution used in above-mentioned pickling processes is the nitric acid that mass fraction is 30-35%.Pickling processes are slight bite,
Surface roughness is further increased, in favor of expanding the subsequent bonded area with surface layer, improves bond strength.
Sandwich layer cleaning after pickling, derusting, oil removing and other impurity attachments are dried for standby.
The preparation method on the surface layer of above-mentioned grinding wheel includes the following steps:
1) powder of surface layer diamond and each component is uniformly mixed, is added in mold and forms powder layer, in powder layer
Sandwich layer is placed on surface, hot-forming to obtain grinding wheel blank；
2) the grinding wheel blank that step 1) obtains is subjected to curing process: in 110-130 DEG C of heat preservation 10-30min, then existed
180-200 DEG C of heat preservation 4-6h, it is cooling to get.
Specifically, above-mentioned preparation method includes surface layer raw material mixing-unilateral side surface layer cloth-sandwich layer dispensing-other side table
Layer cloth-abrasive wheel forming-grinding wheel solidification-inside and outside circle procedure of processing.
Hot pressing temperature is 170-220 DEG C, hot pressing time 15-25min, hot pressing pressure 10-25MPa in step 1).
The powder of surface layer diamond powder and other each components, which is uniformly mixed, in step 1) is added in mold, by table on powder
Face strikes off, i.e., forms powder layer in a mold.
In step 2) in curing process, 1h, to 110-130 DEG C, and keeps the temperature 10-30min by room temperature, then uses
0.5h is warming up to 180-200 DEG C of heat preservation 4-6h again.The cooling is to be cooled to room temperature.It comes out of the stove after being cooled to room temperature, by grinding wheel base
Attrition process and inside and outside circle processing are carried out, finished grinding wheel is obtained.When attrition process, the regular turn-over of the every 2-5min of grinding wheel guarantees sand
It is consistent to take turns two surface machining states.
Beneficial effects of the present invention:
Containing with the equally distributed rare-earth element cerium of alloyed state, lanthanum in metallic bond of the invention, can promote
Sintering process carries out, and bonding agent crystal grain is refined, so that the combination of bonding agent and diamond is even closer.Using the metallic bond
Sandwich layer it is rigidly good, bonding agent is strong to the holding power of diamond, while porosity is high, grinding wheel self-sharpening is good, can satisfy and partly leads
Body encapsulates chip, especially QFN high speed, accurate cutting requirement.
Further, grinding wheel prepared by the present invention, the advantages of having both resinoid bond and metallic bond, have cutting matter
Measure excellent, the characteristics of grinding wheel is rigidly good, is suitable for high-speed cutting, and grinding wheel self-sharpening is good, long service life.Chip is encapsulated, especially
QFN cut copper lead plucking and cutting chipping it is small, without melt tin, chipless lamination, emery wheel cuts speed up to 200mm/s with
On, wheel life is significantly improved compared with conventional resins binding agent sand wheel, in addition, sandwich layer and the matching of surface layer rate of depreciation, grinding wheel cutting edge
Shape retention is good.Conventional package chip cutting, especially QFN cutting are usually single bonding agent system, resin with grinding wheel
Although binding agent sand wheel cut quality is preferable, bonding agent is low to the holding power of diamond, poor rigidity, and easy breaking is limited and cut
The raising of speed is cut, while resinoid bond is not wear-resisting, causes wheel life low；Metal bonded wheel, although having good
Diamond holding power and wearability, be suitble to high-speed cutting, wheel life is long, but cut quality is often poor, grinding wheel self-sharpening
Difference.
Further, core layer surface of the present invention further improves surface roughness, expands through slight bite
With the bonded area on surface layer, bond strength is improved, guarantees lamination do not occur in cutting process.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of 1 medium plain emery wheel of embodiment；
Fig. 2 is the cross-sectional view of Fig. 1；
Fig. 3 is the distribution schematic diagram of the constituent of 1 medium plain emery wheel of embodiment；
Wherein 1 is surface layer, and phenolic resin, 2 be diamond, and 3 be stomata, and 4 be metallic bond, and 5 be sandwich layer.
Specific embodiment
The present invention is further explained in the light of specific embodiments.
Embodiment 1
Copper cerium alloy powder that the metallic bond of the present embodiment is 40 parts by mass fraction, the copper lanthanum that mass fraction is 20 parts
Glass putty that alloyed powder, mass fraction are 10 parts, the titantium hydride that mass fraction is 4 parts, the potassium chloride composition that mass fraction is 3 parts；
Wherein the mass content of cerium is 5% in copper cerium alloy powder, and the mass content of lanthanum is 15% in copper lanthanum alloy powder.
Semiconductor packages in the present embodiment, which is processed, by sandwich layer 5 and is symmetricly set on two surfaces of sandwich layer with ultra-thin grinding wheel
Surface layer 1 constitute, structure is as shown in Figure 1 and Figure 2, and the ingredient on sandwich layer two sides surface layer is identical.Core layer thickness is 0.2 ± 0.002mm,
Core layer thickness accounts for the 1/3 of grinding wheel overall thickness.The stomata 3 formed in sandwich layer with microcellular structure, the porosity of sandwich layer are 25%.
The above-mentioned metallic bond 4 and diamond 2 that sandwich layer is 77 parts by mass fraction form, wherein diamond is in sandwich layer
In mass fraction be 5%, the granularity of diamond is 230-270 mesh.
Surface layer by mass fraction be 65 parts of phenol-formaldehyde resin powder, 15 parts of tungsten carbide powder, 6 parts of cubic boron nitride micro mist and
Diamond composition, wherein mass fraction of the diamond in surface layer is 55%, and the granularity of diamond is 200-230 mesh, tungsten carbide
The granularity of powder is 38 μm -45 μm；The granularity of cubic boron nitride micro mist is 10 μm -20 μm.
Semiconductor packages processing Ultra-thin Sand size of wheel in the present embodiment are as follows: 56mm (outer diameter) × 0.6mm (thickness) ×
40mm (internal diameter).For the present embodiment medium plain emery wheel constituent schematic diagram as shown in figure 3,1 be wherein phenolic resin, 2 be diamond, 3
It is metallic bond for stomata, 4.
In the present embodiment above-mentioned semiconductor packages process ultra-thin grinding wheel the preparation method is as follows:
(1) prepared by sandwich layer
1) raw material for weighing formula ratio is uniformly mixed in batch mixer；
2) mixture obtained in step 1) is put into steel mold type chamber, uniformly after the material of booth, covers mold top board, put
It sets on press bench, the pressure maintaining 4s compression moulding in the case where pressure is 90MPa obtains green wheel；
3) green wheel for obtaining step 2), which is placed in Muffle furnace, carries out pressureless sintering, is specifically with heating rate
100 DEG C/h is warming up to 600 DEG C, keeps the temperature 50min；Grinding wheel is taken out after sintering from Muffle furnace, naturally cools to room temperature；Step 3) is real
Now in conjunction with agent powder metallurgy, while decompose titanium hydride powders；
4) the grinding wheel blank for obtaining step 3) carries out Double End attrition process, after grinding, grinding wheel thickness dimensional accuracy control
Make ± 0.002mm；Inside and outside circle processing is carried out to obtained grinding wheel blank, outer diameter is made and is less than in step 2) outside steel mold type chamber
Diameter 0.05mm, internal diameter are greater than the sandwich layer of the intracavitary diameter 0.05mm of steel mold type；
5) pickling processes are carried out to the sandwich layer that step 4) obtains；Acid solution used in pickling processes is the nitre that mass fraction is 30%
Acid；Pickling processes are slight bite, further increase surface roughness, in favor of expanding the subsequent faying face with surface layer
Product improves bond strength；To the sandwich layer cleaning after pickling, derusting, oil removing and other impurity attachments are dried for standby；
(2) prepared by surface layer
Surface layer preparation includes surface layer raw material mixing-unilateral side surface layer cloth-sandwich layer dispensing-other side surface layer cloth-grinding wheel
Molding-grinding wheel solidification-inside and outside circle processing；Specifically comprise the following steps:
I) each raw material of resin bond wheel layer and diamond are uniformly mixed, it obtains to materials；
II) in grinding wheel forming molds, it feeds intake first, in accordance with the inventory calculated, later uniformly scrapes powder
It is flat；
III) it is put into the sandwich layer prepared in above-mentioned sandwich layer preparation step；
IV) throw one layer and step II again on sandwich layer) the surface layer stand-by raw material of identical substance, powder is uniformly struck off；
V) mold top board is covered, progress is hot-forming, obtains grinding wheel integral workblank；Hot press forming technology are as follows: hot pressing temperature
Degree is 220 DEG C, hot pressing time 25min, hot pressing pressure 25MPa；
VI) to step V) gained grinding wheel integral workblank carries out curing process, curing process in an oven are as follows: 1 hour from room
To 120 DEG C, 120 DEG C keep the temperature 0.2 hour for temperature rise, are then warming up within 0.5 hour 200 DEG C and keep the temperature 5 hours, last furnace cooling is arrived
It 25 DEG C, comes out of the stove；
VII) the whole grinding wheel blank of preparation is then subjected to surface grinding processing and inside and outside circle processing, obtain finished grinding wheel.
Wherein when whole grinding wheel blank surface attrition process, grinding wheel wants regular turn-over, to guarantee that two surface layer machining state of grinding wheel is consistent.
Cut on cutter special using grinding wheel obtained QFN encapsulation chip, chip finished size be 8 × 8 ×
1.5mm.At speed of mainshaft 30000rpm, the operating condition of cooling water flow 2.0L/min, cutting speed up to 250mm/s,
It is 5 times or more of existing resin abrasive cutting wheel speed；15 μm of chipping < of cutting, without tin, chipless lamination is melted, copper lead is drawn
Hair meets the requirements (be less than pin spacing 1/4), effective cutting length 5200m, be 8 times of existing resin abrasive cutting wheel service life with
On.
Embodiment 2
Copper cerium alloy powder that the metallic bond of the present embodiment is 30 parts by mass fraction, the copper lanthanum that mass fraction is 15 parts
Glass putty that alloyed powder, mass fraction are 5 parts, the titantium hydride that mass fraction is 2 parts, the potassium chloride composition that mass fraction is 5 parts；Its
The mass content of cerium is 6% in middle copper cerium alloy powder, and the mass content of lanthanum is 12% in copper lanthanum alloy powder.
Semiconductor packages in the present embodiment, which is processed, by sandwich layer and is symmetricly set on two surfaces of sandwich layer with ultra-thin grinding wheel
Surface layer constitute, the ingredient on sandwich layer two sides surface layer is identical.Core layer thickness is 0.2 ± 0.002mm, and core layer thickness accounts for grinding wheel overall thickness
1/4.The porosity of sandwich layer is 15%.
The above-mentioned metallic bond and diamond that sandwich layer is 57 parts by mass fraction form, wherein diamond is in the core
Mass fraction be 8%, the granularity of diamond is 270-325 mesh.
Surface layer by mass fraction be 55 parts of phenol-formaldehyde resin powder, 10 parts of tungsten carbide powder, 6 parts of cubic boron nitride micro mist and
Diamond composition, wherein mass fraction of the diamond in surface layer is 50%, and the granularity of diamond is 230-270 mesh, tungsten carbide
The granularity of powder is 38 μm -45 μm；The granularity of cubic boron nitride micro mist is 10 μm -20 μm.
Semiconductor packages processing Ultra-thin Sand size of wheel in the present embodiment are as follows: 56mm (outer diameter) × 0.6mm (thickness) ×
40mm (internal diameter).
In the present embodiment above-mentioned semiconductor packages process ultra-thin grinding wheel the preparation method is as follows:
(1) prepared by sandwich layer
1) raw material for weighing formula ratio is uniformly mixed in batch mixer；
2) mixture obtained in step 1) is put into steel mold type chamber, uniformly after the material of booth, covers mold top board, put
It sets on press bench, the pressure maintaining 2s compression moulding in the case where pressure is 75MPa obtains green wheel；
3) green wheel for obtaining step 2), which is placed in Muffle furnace, carries out pressureless sintering, is specifically with heating rate
100 DEG C/h is warming up to 520 DEG C, keeps the temperature 30min；Grinding wheel is taken out after sintering from Muffle furnace, naturally cools to room temperature；Step 3) is real
Now in conjunction with agent powder metallurgy, while decompose titanium hydride powders；
4) the grinding wheel blank for obtaining step 3) carries out Double End attrition process, after grinding, grinding wheel thickness dimensional accuracy control
Make ± 0.002mm；Inside and outside circle processing is carried out to obtained grinding wheel blank, outer diameter is made and is less than in step 2) outside steel mold type chamber
Diameter 0.1mm, internal diameter are greater than the sandwich layer of the intracavitary diameter 0.1mm of steel mold type；
5) pickling processes are carried out to the sandwich layer that step 4) obtains；Acid solution used in pickling processes is the nitre that mass fraction is 35%
Acid；Pickling processes are slight bite, further increase surface roughness, in favor of expanding the subsequent faying face with surface layer
Product improves bond strength；To the sandwich layer cleaning after pickling, derusting, oil removing and other impurity attachments are dried for standby；
(2) prepared by surface layer
Surface layer preparation includes surface layer raw material mixing-unilateral side surface layer cloth-sandwich layer dispensing-other side surface layer cloth-grinding wheel
Molding-grinding wheel solidification-inside and outside circle processing；Specifically comprise the following steps:
I) each raw material of resin bond wheel layer and diamond are uniformly mixed, it obtains to materials；
II) in grinding wheel forming molds, it feeds intake first, in accordance with the inventory calculated, later uniformly scrapes powder
It is flat；
III) it is put into the sandwich layer prepared in above-mentioned sandwich layer preparation step；
IV) throw one layer and step II again on sandwich layer) the surface layer stand-by raw material of identical substance, powder is uniformly struck off；
V) mold top board is covered, progress is hot-forming, obtains grinding wheel integral workblank；Hot press forming technology are as follows: hot pressing temperature
Degree is 170 DEG C, hot pressing time 15min, hot pressing pressure 10MPa；
VI) to step V) gained grinding wheel integral workblank carries out curing process, curing process in an oven are as follows: 1 hour from room
To 120 DEG C, 120 DEG C keep the temperature 0.2 hour for temperature rise, are then warming up within 0.5 hour 180 DEG C and keep the temperature 5 hours, last furnace cooling is arrived
It 25 DEG C, comes out of the stove；
VII) the whole grinding wheel blank of preparation is then subjected to surface grinding processing and inside and outside circle processing, obtain finished grinding wheel.
Wherein when whole grinding wheel blank surface attrition process, grinding wheel wants regular turn-over, to guarantee that two surface layer machining state of grinding wheel is consistent.
QFN encapsulation chip is cut on cutter special using grinding wheel obtained, chip finished size is 6 × 6 × 2mm.
At speed of mainshaft 28000rpm, the operating condition of cooling water flow 2.0L/min, cutting speed is existing up to 230mm/s
4 times or more of resin abrasive cutting wheel speed；14 μm of chipping < of cutting, without tin, chipless lamination is melted, copper lead plucking meets
It is required that (being less than pin spacing 1/4), effective cutting length 4900m is 9 times or more of existing resin abrasive cutting wheel service life.
Embodiment 3
Copper cerium alloy powder that the metallic bond of the present embodiment is 35 parts by mass fraction, the copper lanthanum that mass fraction is 18 parts
Alloyed powder, mass fraction are 16 parts of glass putty, 3 parts of titantium hydride, 4 parts of potassium chloride compositions；Wherein in copper cerium alloy powder cerium matter
Measuring content is 8%, and the mass content of lanthanum is 10% in copper lanthanum alloy powder.
Semiconductor packages in the present embodiment, which is processed, by sandwich layer and is symmetricly set on two surfaces of sandwich layer with ultra-thin grinding wheel
Surface layer constitute, the ingredient on sandwich layer two sides surface layer is identical.Core layer thickness is 0.2 ± 0.002mm, and core layer thickness accounts for grinding wheel overall thickness
1/2.The porosity of sandwich layer is 20%.
The above-mentioned metallic bond and diamond that sandwich layer is 76 parts by mass fraction form, wherein diamond is in the core
Mass fraction be 10%, the granularity of diamond is 325-400 mesh.
Surface layer by mass fraction be 60 parts of phenol-formaldehyde resin powder, 12 parts of tungsten carbide powder, 5 parts of cubic boron nitride micro mist and
Diamond composition, wherein mass fraction of the diamond in surface layer is 60%, and the granularity of diamond is 270-325 mesh, tungsten carbide
The granularity of powder is 38-45 μm；The granularity of cubic boron nitride micro mist is 10-20 μm.
Semiconductor packages processing Ultra-thin Sand size of wheel in the present embodiment are as follows: 56mm (outer diameter) × 0.6mm (thickness) ×
40mm (internal diameter).
In the present embodiment above-mentioned semiconductor packages process ultra-thin grinding wheel the preparation method is as follows:
(1) prepared by sandwich layer
1) raw material for weighing formula ratio is uniformly mixed in batch mixer；
2) mixture obtained in step 1) is put into steel mold type chamber, uniformly after the material of booth, covers mold top board, put
It sets on press bench, the pressure maintaining 3s compression moulding in the case where pressure is 80MPa obtains green wheel；
3) green wheel for obtaining step 2), which is placed in Muffle furnace, carries out pressureless sintering, is specifically with heating rate
100 DEG C/h is warming up to 650 DEG C, keeps the temperature 40min；Grinding wheel is taken out after sintering from Muffle furnace, naturally cools to room temperature；Step 3) is real
Now in conjunction with agent powder metallurgy, while decompose titanium hydride powders；
4) the grinding wheel blank for obtaining step 3) carries out Double End attrition process, after grinding, grinding wheel thickness dimensional accuracy control
Make ± 0.002mm；Inside and outside circle processing is carried out to obtained grinding wheel blank, outer diameter is made and is less than in step 2) outside steel mold type chamber
Diameter 0.1mm, internal diameter are greater than the sandwich layer of the intracavitary diameter 0.1mm of steel mold type；
5) pickling processes are carried out to the sandwich layer that step 4) obtains；Acid solution used in pickling processes is the nitre that mass fraction is 32%
Acid；Pickling processes are slight bite, further increase surface roughness, in favor of expanding the subsequent faying face with surface layer
Product improves bond strength；To the sandwich layer cleaning after pickling, derusting, oil removing and other impurity attachments are dried for standby；
(2) prepared by surface layer
Surface layer preparation includes surface layer raw material mixing-unilateral side surface layer cloth-sandwich layer dispensing-other side surface layer cloth-grinding wheel
Molding-grinding wheel solidification-inside and outside circle processing；Specifically comprise the following steps:
I) each raw material of resin bond wheel layer and diamond are uniformly mixed, it obtains to materials；
II) in grinding wheel forming molds, it feeds intake first, in accordance with the inventory calculated, later uniformly scrapes powder
It is flat；
III) it is put into the sandwich layer prepared in above-mentioned sandwich layer preparation step；
IV) throw one layer and step II again on sandwich layer) the surface layer stand-by raw material of identical substance, powder is uniformly struck off；
V) mold top board is covered, progress is hot-forming, obtains grinding wheel integral workblank；Hot press forming technology are as follows: hot pressing temperature
Degree is 200 DEG C, hot pressing time 25min, hot pressing pressure 20MPa；
VI) to step V) gained grinding wheel integral workblank carries out curing process, curing process in an oven are as follows: 1 hour from room
To 120 DEG C, 120 DEG C keep the temperature 0.2 hour for temperature rise, are then warming up within 0.5 hour 190 DEG C and keep the temperature 5 hours, last furnace cooling is arrived
It 25 DEG C, comes out of the stove；
VII) the whole grinding wheel blank of preparation is then subjected to surface grinding processing and inside and outside circle processing, obtain finished grinding wheel.
Wherein when whole grinding wheel blank surface attrition process, grinding wheel wants regular turn-over, to guarantee that two surface layer machining state of grinding wheel is consistent.
QFN encapsulation chip is cut on cutter special using grinding wheel obtained, chip finished size is 8 × 8 × 2mm.
At speed of mainshaft 32000rpm, the operating condition of cooling water flow 2.0L/min, cutting speed is existing up to 210mm/s
6 times or more of resin abrasive cutting wheel speed；15 μm of chipping < of cutting, without tin, chipless lamination is melted, copper lead plucking meets
It is required that (being less than pin spacing 1/4), effective cutting length 4200m is 7 times or more of existing resin abrasive cutting wheel service life.
Claims (10)
1. a kind of bonding agent, the bonding agent is metallic bond, which is characterized in that the component including following parts by weight: 30-
40 parts of copper cerium alloys, 15-20 parts of copper lanthanum alloys, 5-16 parts of glass puttys, the titantium hydride of 2-4 parts by weight, 3-5 parts by weight potassium chloride；
The mass fraction of cerium is 5-8% in the copper cerium alloy, and the mass fraction of lanthanum is 10-15% in copper lanthanum alloy.
2. a kind of semiconductor packages processes ultra-thin grinding wheel, which is characterized in that including sandwich layer and be arranged in the table of core layer surface
Layer；The sandwich layer includes metallic bond and sandwich layer diamond, and the metallic bond is as described in claim 1 combines
Agent.
3. semiconductor packages as claimed in claim 2 processes ultra-thin grinding wheel, which is characterized in that the sandwich layer center core layer Buddha's warrior attendant
The mass percent of stone is 5-10%.
4. semiconductor packages as claimed in claim 2 processes ultra-thin grinding wheel, which is characterized in that the grain of the sandwich layer diamond
Degree is 200-230 mesh, 230-270 mesh, 270-325 mesh or 325-400 mesh.
5. semiconductor packages as claimed in claim 2 processes ultra-thin grinding wheel, which is characterized in that the porosity of the sandwich layer is
15-25%。
6. semiconductor packages as claimed in claim 2 processes ultra-thin grinding wheel, which is characterized in that the core layer thickness accounts for grinding wheel
The 1/4-1/2 of overall thickness.
7. the semiconductor packages as described in claim 2-6 any one processes ultra-thin grinding wheel, which is characterized in that the surface layer
Including resinoid bond and surface layer diamond, the partial size of the sandwich layer diamond is equal with the partial size of surface layer diamond.
8. the preparation method that a kind of semiconductor packages as claimed in claim 2 processes ultra-thin grinding wheel, which is characterized in that including
Following steps:
1) metallic bond is uniformly mixed with diamond raw material, compression moulding obtains green wheel；
2) by green wheel temperature be 520-650 DEG C at pressureless sintering 30-50min, obtain grinding wheel blank；
3) by the pickling of grinding wheel blank to get.
9. the preparation method that semiconductor packages as claimed in claim 8 processes ultra-thin grinding wheel, which is characterized in that the compacting
It is shaped to the pressure maintaining 2-4s at 75-90MPa.
10. the preparation method that semiconductor packages as claimed in claim 8 processes ultra-thin grinding wheel, which is characterized in that the sand
It takes turns green compact and sintering temperature is risen to the heating rate of 100 DEG C/h.
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| CN109719294B (en) * | 2018-12-30 | 2021-04-09 | 苏州赛尔科技有限公司 | 40-micron ultrathin metal bond diamond scribing knife for Faraday rotator and application thereof |
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| US6685755B2 (en) * | 2001-11-21 | 2004-02-03 | Saint-Gobain Abrasives Technology Company | Porous abrasive tool and method for making the same |
| CN201095162Y (en) * | 2007-09-03 | 2008-08-06 | 泉州市洛江区双阳金刚石工具有限公司 | Diamond gang saw tool bit with laminated segmented structure |
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