CN107398836A - A kind of bonding agent, semiconductor packages processing ultra-thin emery wheel and preparation method thereof - Google Patents
A kind of bonding agent, semiconductor packages processing ultra-thin emery wheel and preparation method thereof Download PDFInfo
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- CN107398836A CN107398836A CN201710625062.5A CN201710625062A CN107398836A CN 107398836 A CN107398836 A CN 107398836A CN 201710625062 A CN201710625062 A CN 201710625062A CN 107398836 A CN107398836 A CN 107398836A
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- Prior art keywords
- emery wheel
- diamond
- parts
- sandwich layer
- semiconductor packages
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- 229910001651 emery Inorganic materials 0.000 title claims abstract description 118
- 238000012545 processing Methods 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 239000007767 bonding agent Substances 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000010410 layer Substances 0.000 claims abstract description 168
- 239000010432 diamond Substances 0.000 claims abstract description 75
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 75
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims abstract description 20
- 239000012792 core layer Substances 0.000 claims abstract description 12
- 150000004678 hydrides Chemical class 0.000 claims abstract description 11
- FQVNUZAZHHOJOH-UHFFFAOYSA-N copper lanthanum Chemical compound [Cu].[La] FQVNUZAZHHOJOH-UHFFFAOYSA-N 0.000 claims abstract description 10
- 235000011164 potassium chloride Nutrition 0.000 claims abstract description 10
- 239000001103 potassium chloride Substances 0.000 claims abstract description 10
- 229910000636 Ce alloy Inorganic materials 0.000 claims abstract description 9
- SKEYZPJKRDZMJG-UHFFFAOYSA-N cerium copper Chemical compound [Cu].[Ce] SKEYZPJKRDZMJG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910000858 La alloy Inorganic materials 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 6
- 238000005554 pickling Methods 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 16
- 238000005245 sintering Methods 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 8
- 239000004576 sand Substances 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 238000001272 pressureless sintering Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 238000005520 cutting process Methods 0.000 abstract description 53
- 238000000227 grinding Methods 0.000 abstract description 22
- 239000000843 powder Substances 0.000 description 43
- 238000000034 method Methods 0.000 description 31
- 229920005989 resin Polymers 0.000 description 17
- 239000011347 resin Substances 0.000 description 17
- 239000010949 copper Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 238000007731 hot pressing Methods 0.000 description 12
- 229910052582 BN Inorganic materials 0.000 description 11
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 11
- 229910000831 Steel Inorganic materials 0.000 description 11
- 239000010959 steel Substances 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 239000003595 mist Substances 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 8
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 8
- 229910052684 Cerium Inorganic materials 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 7
- -1 chipless lamination Inorganic materials 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 7
- 229910052746 lanthanum Inorganic materials 0.000 description 7
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000010792 warming Methods 0.000 description 7
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 6
- 238000003475 lamination Methods 0.000 description 6
- 229920001568 phenolic resin Polymers 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000004663 powder metallurgy Methods 0.000 description 4
- 230000007306 turnover Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000048 titanium hydride Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910016347 CuSn Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- B22F1/0003—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
- B24D3/10—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
- B24D3/342—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D5/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor
- B24D5/02—Wheels in one piece
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
The present invention relates to a kind of bonding agent, semiconductor packages processing ultra-thin emery wheel and preparation method thereof, belong to grinding tool technical field.The bonding agent of the present invention is metallic bond, includes the component of following parts by weight：30~40 parts of copper cerium alloys, 15~20 parts of copper lanthanum alloys and 5~16 parts of glass puttys, the titantium hydride of 24 parts by weight, the potassium chloride of 35 parts by weight.The emery wheel of the present invention includes sandwich layer and is arranged on the top layer of core layer surface；Sandwich layer includes above-mentioned metallic bond and diamond.The metallic bond of the present invention can improve the hold to diamond in emery wheel, improve the self-sharpening and cutting accuracy of emery wheel.The advantages of emery wheel of the present invention has resinoid bond and metallic bond concurrently, there is the characteristics of excellent cut quality, good, suitable high-speed cutting of rigidity, self-sharpening is good, service life is long, disclosure satisfy that semiconductor packages high speed, accurate cutting demand.
Description
Technical field
The present invention relates to a kind of bonding agent, semiconductor packages processing ultra-thin emery wheel and preparation method thereof, belong to grinding tool skill
Art field.
Background technology
Pursuit of the terminal electronic product to lighter, thinner, smaller, high reliability, low-power consumption constantly promotes semiconductor
The development of encapsulation technology.For example, a kind of chip package QFN (Quad Flat No-Leal) encapsulation therein be quad flat without
Pin package, it is wide variety of Novel high-end packing forms in the terminal class product such as mobile phone, digital camera in recent years.QFN
Chip is encapsulated as encapsulating products, is typically made up of internal copper lead frame and outside plastic compression resin base cladding, is composite wood
Expect structure.In modern large-scale industrial production, encapsulated simultaneously for multiple chips when QFN encapsulates chip manufacturing, subsequently through cutting
Process realizes chip singulation, and the requirement to cut quality is：Without molten tin, chipless lamination, chip cutting chipping and core
Piece copper lead plucking size is less than setting.QFN encapsulates the composite construction of chip so that needs to cut off internal copper simultaneously during cutting
Lead frame and external resin base inclusion enclave, yet with the splendid ductility of copper product, copper lead during cutting is caused to be also easy to produce
Plucking is exceeded (being more than pin spacing 1/4), causes chip rejection.
At present, it is mainly resin bond wheel that QFN, which encapsulates chip cutting with emery wheel,.This is due to that resinoid bond is wear-resisting
Property it is relatively poor so that emery wheel self-sharpening is good, ensure that the excellent cutting power of emery wheel, at the same resinoid bond have it is certain
Elasticity, also it is beneficial to improve cut quality, the cut quality such as finally can preferably meets the small lead plucking of chip, cutting chipping is small
Rigors.But resinoid bond abrasive cut-off wheel also has the shortcomings that more prominent：Because bonding agent wears no resistance so that emery wheel is whole
Body life time is shorter, not only increases user cost, also can reduce production efficiency because frequently changing emery wheel；Emery wheel rigidity, intensity compared with
It is low, in high-speed cutting, the easily heavy load caused by it can not bear high-speed cutting and breaking, therefore resin bond wheel is cut
It is often relatively low to cut speed, generally in below 40mm/s.
Metal bonded wheel is because self-sharpening is poor, the shortcomings that density is high, chip removal difficulty, when cutting QFN encapsulation chips,
Diamond passivation or wheel topography are easily caused, timely exposure is tended not to stylish cutting edge, causes emery wheel cuts ability
Be greatly lowered, the copper lead plucking of diced chip is serious, therefore at present metal bonded wheel it is rare have cutting QFN encapsulation core
The industrial applications of piece.But because metallic bond has good diamond hold and wearability, wheel life is grown, simultaneously
Emery wheel rigidity, intensity are high, can bear larger cutting loading, suitable high-speed cutting operating mode, and therefore, person skilled is also always
Carry out the relation technological researching of metallic bond QFN abrasive cut-off wheels.
In the prior art, CN101870008B discloses a kind of sintering metal base based on saw formula cutting QFN package substrates
Diamond saw blade, is made up of diamond abrasive grain and metal matrix, and wherein metal matrix includes metal dust and inorganic filler, metal
Powder is by Cu powder or CuSn20Pre-alloyed powder, Sn powder and Co powder composition, inorganic filler is by SiC and Al2O3Composition, raw material are matched somebody with somebody
After putting, metal-base diamond saw blade needed for being processed into is thinned etc. through pre-molding, hot pressed sintering, inside and outside circle cutting, thickness.
The standby saw blade of the patent system has the characteristics of intensity is high, wearability is good, and service life is long, but due to the emery wheel self-sharpening still compared with
Difference, although metal bonded wheel intensity is preferable, its cutting speed is still limited, is below 50mm/s.It is limited to metal knot simultaneously
The characteristic of mixture in itself, its cut quality have larger gap with resin bond wheel, can not meet the high-accuracy cutting in part
Using.
In the prior art, the patent of invention that application publication number is CN105798307A discloses one kind and is based on IC package device
Laminated metallic base diamond saw blade and manufacture method are used in cutting.The patent points out that the saw blade is made up of multiple individual layer superimposions,
Individual layer is divided into top layer and sandwich layer according to saw blade construction, and each individual layer forms by metal matrix and diamond abrasive, wherein, top layer
Diamond particles be less than the diamond particles size of sandwich layer, the diamond concentration on top layer is more than the diamond concentration of sandwich layer；Its
Middle metal matrix is mainly made up of Cu, Sn, and CuSn alloys, wherein, the Sn contents in top layer are more than the Sn contents in sandwich layer.
Preparation method in the patent disclose through pre-molding, hot pressed sintering, inside and outside circle cutting, thickness be thinned etc. be processed into metal
Base diamond saw blade.Although the metal-base diamond saw blade is by Multi-layer design, its intensity strengthens to a certain extent, should
Metal-base diamond saw blade cutting accuracy is poor, such as can cause flash during cutting, and the phenomenon for melting tin occurs, cutting
Face is not smooth neat enough, can not meet higher machining accuracy, influences the performance of chip, applied defect be present.
The content of the invention
It is an object of the invention to provide a kind of bonding agent, the bonding agent can improve the holding to diamond in emery wheel
Power, improve the self-sharpening and cutting accuracy of emery wheel.
The present invention also aims to provide a kind of semiconductor packages processing ultra-thin emery wheel.
It is another object of the present invention to provide a kind of preparation method of above-mentioned emery wheel.
To achieve these goals, the technical scheme of bonding agent of the invention is as follows：
A kind of bonding agent, the bonding agent are metallic bond, include the component of following parts by weight：30~40 parts of copper ceriums close
Gold, 15~20 parts of copper lanthanum alloys, 5~16 parts of glass puttys, the titantium hydride of 2-4 parts by weight, the potassium chloride of 3-5 parts by weight.
The mass fraction of cerium is 5-8% in above-mentioned copper cerium alloy.The mass fraction of lanthanum is 10- in above-mentioned copper lanthanum alloy
15%.
The semiconductor packages processing of the present invention is as follows with the technical scheme of ultra-thin emery wheel：
A kind of semiconductor packages processing ultra-thin emery wheel, including sandwich layer and the top layer for being arranged on two surfaces of sandwich layer；Institute
Stating sandwich layer includes metallic bond and sandwich layer diamond, and the metallic bond is above-mentioned metallic bond.
Rare-earth element cerium, lanthanum in metallic bond are uniformly distributed with alloyed state, can promote metallic bond
Sintering character, improve the mechanical property such as bonding agent bending strength and impact strength.In addition, rare-earth element cerium, lanthanum can also refine
The crystal grain of bonding agent, make the combination of bonding agent and diamond even closer, be advantageous to lift height of protrusion.
Titantium hydride in metallic bond is used as pyrolytic pore creating material in emery wheel, and the initial decomposition temperature of titantium hydride is
400 DEG C or so, match with the sintering temperature of above-mentioned metallic bond.Titantium hydride can decompose in emery wheel prepares sintering process
Hydrogen is discharged, makes to form loose structure in the emery wheel sandwich layer after sintering.In general, the porosity of sandwich layer is 15-25%.
The fusing point of potassium chloride in metallic bond is 700 DEG C, will not be sent out under the sintering temperature of above-mentioned metallic bond
Changing, only occupy node location in emery wheel sandwich layer.But potassium chloride is soluble in water, during emery wheel use, outside emery wheel
The potassium chloride of circular portion touches cutting cooling water, can be quickly dissolved in water and form hole, further improve the porosity of emery wheel.Drop
Low dense structure's degree of metallic bond, and then the wearability of bonding agent is reduced, the sharpness of emery wheel is improved, is realized
Diamond from sharp.In addition, the hole of emery wheel serves the effect for holding bits simultaneously, chip removal is difficult when solving emery wheel high-speed cutting
The problem of.
The pore-creating effect of titantium hydride and potassium chloride is combined, and reduces dense structure's degree of metallic bond jointly, and then
Reduce the wearability of bonding agent and the hold to diamond abrasive, improve emery wheel sharpness, realize sandwich layer from sharp.
The rate of depreciation on the top layer after the raising of sandwich layer and wearability after wearability reduces in the present invention matches well, common guarantee sand
Take turns overall shape retention.
The content of diamond can be set depending on cutting object in sandwich layer, in general, the sandwich layer center core layer diamond
Mass percent is 5-10%.
Sandwich layer diamond is diamond particles of the prior art.In general, the granularity of the sandwich layer diamond is 200/
230 mesh, 230/270 mesh, 270/325 mesh or 325/400 mesh.
The thickness precision of above-mentioned sandwich layer is ± 0.002mm.
Above-mentioned core layer thickness accounts for the 1/4-1/2 of emery wheel gross thickness.
The composition on the top layer on above-mentioned two surfaces of sandwich layer is identical.
Above-mentioned sandwich layer is metal anchoring agent diamond wheel layer, and top layer is resin anchoring agent diamond grinding wheel layer.
Above-mentioned top layer includes the component of following parts by weight：The phenolic resin or epoxy resin, 10-15 part carbon of 55-65 parts
Change tungsten, 3-6 parts cubic boron nitride, top layer diamond.The mass fraction of top layer diamond is 50%-60% in top layer.
The top layer of emery wheel of the present invention, can be to having cut buffering based on resinoid bond good self-sharpening and elastic characteristic
Effect, is advantageous to obtain splendid cut quality, realizes semiconductor packaging chip, when particularly QFN is cut copper lead plucking it is small,
Cut chipping it is small, while can also avoid diced chip top layer tin part melt tin, chip plucking the problems such as.Meanwhile the carbon of introducing
Change tungsten powder, cubic boron nitride micro mist are respectively provided with very high hardness, with reference to high concentration diamond, can effectively improve the wear-resisting of top layer
Property, wheel life is improved, is more matched with the rate of depreciation of sandwich layer, is also beneficial to keep emery wheel side view.
Above-mentioned top layer diamond be grain size number be 200/230 mesh, grain size number is 230/270 mesh, grain size number is 270/325 mesh
And grain size number is one kind in the diamond of 325/400 mesh.
The conversion corresponding with granularity of above-mentioned grain size number is pressed《The super hard abrasives of GB/T 6406-1996 diamond or cubic boron nitride
Particle size》Calculate.Specifically, above-mentioned top layer diamond is granularity D1 is 63-75um, granularity D2 is 53-63um, granularity D3 is
45-53um and granularity D4 is one kind in 38-45um diamond.
The top layer includes resinoid bond and top layer diamond, particle diameter and the top layer diamond of the sandwich layer diamond
Particle diameter is equal.
The granularity of tungsten carbide in top layer is 38-45 μm.The granularity of cubic boron nitride micro mist is 10-20 μm.Tungsten carbide with
The granularity thickness collocation of cubic boron nitride, complements one another.
Above-mentioned sandwich layer is loose structure；The porosity of sandwich layer is 15-25%.Emery wheel hole serves the work for holding bits simultaneously
With solving the problems, such as chip removal difficulty during emery wheel high-speed cutting.
The preparation method of above-mentioned emery wheel comprises the following steps：
1) metallic bond is well mixed with diamond raw material, it is compressing to obtain green wheel；
2) by green wheel temperature be 520-650 DEG C at pressureless sintering 30-50min, obtain emery wheel blank；
3) by emery wheel blank pickling, produce.
It is described compressing for the pressurize 2-4s under 75-90MPa.
The green wheel rises to sintering temperature with 100 DEG C/h heating rate.
Above-mentioned sintering is carried out in Muffle furnace.
Pressureless sintering is sintered in above-mentioned sandwich layer preparation process.Bonding agent powder metallurgy is realized, while makes titantium hydride
Powder de-agglomeration, the uniform hole of pore size Uniformly distributed is left in sandwich layer.
Room temperature is naturally cooled to after the completion of above-mentioned sintering.
Emery wheel blank in step 3) carries out Double End attrition process, after grinding, grinding wheel thickness dimensional accuracy before pickling
Control ± 0.002mm.
Emery wheel blank after above-mentioned grinding carries out inside and outside circle processing, and external diameter is made and is less than the steel mold type used in step 1)
Chamber external diameter 0.05mm-0.1mm, internal diameter are more than steel mold die cavity internal diameter 0.05mm-0.1mm sandwich layer.
Acid solution used in above-mentioned pickling processes is the nitric acid that mass fraction is 30-35%.Pickling processes are slight bite,
Surface roughness is further improved, in favor of expanding the subsequently bonded area with top layer, improves bond strength.
Sandwich layer cleaning after pickling, derusting, oil removing and other impurity attachments, is dried for standby.
The preparation method on the top layer of above-mentioned emery wheel comprises the following steps：
1) powder of top layer diamond and each component is well mixed, adds in mould and form powder layer, in powder layer
Sandwich layer is placed on surface, hot-forming to obtain emery wheel blank；
2) the emery wheel blank for obtaining step 1) carries out curing process：10-30min, Ran Hou are incubated at 110-130 DEG C
180-200 DEG C of insulation 4-6h, cooling, is produced.
Specifically, above-mentioned preparation method includes top layer raw material batch mixing-unilateral top layer cloth-sandwich layer dispensing-opposite side table
Layer cloth-abrasive wheel forming-emery wheel solidification-inside and outside circle procedure of processing.
Hot pressing temperature is 170-220 DEG C, hot pressing time 15-25min, hot pressing pressure 10-25MPa in step 1).
The powder of top layer diamond powder and other each components is well mixed in step 1) adds in mould, by powder upper table
Face strikes off, i.e., forms powder layer in a mold.
In step 2) in curing process, 1h, to 110-130 DEG C, and is incubated 10-30min by room temperature, Ran Houyong
0.5h is warming up to 180-200 DEG C of insulation 4-6h again.The cooling is to be cooled to room temperature.Come out of the stove after being cooled to room temperature, by emery wheel base
Processing and inside and outside circle processing are ground, obtains finished grinding wheel.During attrition process, emery wheel ensures sand per the regular turn-overs of 2-5min
Take turns two Surface Machining state consistencies.
Beneficial effects of the present invention：
Contain in the metallic bond of the present invention with the equally distributed rare-earth element cerium of alloyed state, lanthanum, can promote
Sintering process is carried out, and refines bonding agent crystal grain so that the combination of bonding agent and diamond is even closer.Using the metallic bond
Sandwich layer it is rigidly good, bonding agent is strong to the hold of diamond, while porosity is high, emery wheel self-sharpening is good, disclosure satisfy that and partly leads
Body encapsulates chip, particularly QFN high speeds, accurate cutting requirement.
Further, the emery wheel for preparing of the present invention, the advantages of having resinoid bond and metallic bond concurrently, there is cutting matter
Excellent, emery wheel rigidly good, suitable high-speed cutting is measured, the characteristics of emery wheel self-sharpening is good, and service life is long.Chip is encapsulated, particularly
QFN cuts copper lead plucking and cutting chipping is small, without molten tin, chipless lamination, emery wheel cuts speed up to 200mm/s with
On, wheel life significantly improves compared with conventional resins binding agent sand wheel, in addition, sandwich layer and the matching of top layer rate of depreciation, emery wheel cutting edge
Shape retention is good.Conventional package chip cutting, particularly QFN cuttings are usually single bonding agent system with emery wheel, resin
Although binding agent sand wheel cut quality is preferable, bonding agent is low to the hold of diamond, poor rigidity, easy breaking, limits and cuts
The raising of speed is cut, while resinoid bond is not wear-resisting, causes wheel life low；Metal bonded wheel, although with good
Diamond hold and wearability, be adapted to high-speed cutting, wheel life length, but cut quality is often poor, emery wheel self-sharpening
Difference.
Further, SMIS layer surface of the present invention further increases surface roughness, expanded through slight bite
With the bonded area on top layer, bond strength is improved, ensures to occur without lamination in cutting process.
Brief description of the drawings
Fig. 1 is the structural representation of the medium plain emery wheel of embodiment 1；
Fig. 2 is Fig. 1 sectional view；
Fig. 3 is the distribution schematic diagram of the constituent of the medium plain emery wheel of embodiment 1；
Wherein 1 is top layer, and phenolic resin, 2 be diamond, and 3 be stomata, and 4 be metallic bond, and 5 be sandwich layer.
Embodiment
With reference to specific embodiment, the invention will be further described.
Embodiment 1
The metallic bond of the present embodiment is by copper cerium alloy powder that mass fraction is 40 parts, the copper lanthanum that mass fraction is 20 parts
Glass putty that alloyed powder, mass fraction are 10 parts, the titantium hydride that mass fraction is 4 parts, the potassium chloride composition that mass fraction is 3 parts；
The mass content of cerium is 5% wherein in copper cerium alloy powder, and the mass content of lanthanum is 15% in copper lanthanum alloy powder.
Semiconductor packages in the present embodiment is processed by sandwich layer 5 and is symmetricly set on two surfaces of sandwich layer with ultra-thin emery wheel
Top layer 1 form, as shown in Figure 1 and Figure 2, the composition on sandwich layer both sides top layer is identical for structure.Core layer thickness is 0.2 ± 0.002mm,
Core layer thickness accounts for the 1/3 of emery wheel gross thickness.There is the stomata 3 that microcellular structure is formed, the porosity of sandwich layer is 25% in sandwich layer.
Sandwich layer is made up of the above-mentioned metallic bond 4 and diamond 2 that mass fraction is 77 parts, wherein, diamond is in sandwich layer
In mass fraction be 5%, the granularity of diamond is 230/270 mesh.
Top layer by mass fraction be 65 parts phenol-formaldehyde resin powder, 15 parts of tungsten carbide powder, 6 parts of cubic boron nitride micro mist and
Diamond forms, and wherein mass fraction of the diamond in top layer is 55%, and the granularity of diamond is 200/230 mesh, tungsten carbide
The granularity of powder is 38 μm -45 μm；The granularity of cubic boron nitride micro mist is 10 μm -20 μm.
Semiconductor packages processing in the present embodiment is with Ultra-thin Sand size of wheel：56mm (external diameter) × 0.6mm (thickness) ×
40mm (internal diameter).For the present embodiment medium plain emery wheel constituent schematic diagram as shown in figure 3, wherein 1 is phenolic resin, 2 be diamond, 3
It is metallic bond for stomata, 4.
Above-mentioned semiconductor packages processing is as follows with the preparation method of ultra-thin emery wheel in the present embodiment：
(1) prepared by sandwich layer
1) raw material of formula ratio is weighed, is well mixed in batch mixer；
2) mixture obtained in step 1) is put into steel mold die cavity, uniformly after the material of stand, covers mould top board, put
Put on press bench, in the case where pressure is 90MPa, pressurize 4s is compressing, obtains green wheel；
3) green wheel for obtaining step 2), which is placed in Muffle furnace, carries out pressureless sintering, specifically using programming rate as
100 DEG C/h is warming up to 600 DEG C, is incubated 50min；Emery wheel is taken out after sintering from Muffle furnace, naturally cools to room temperature；Step 3) is real
In conjunction with agent powder metallurgy, while decompose titanium hydride powders；
4) the emery wheel blank for obtaining step 3) carries out Double End attrition process, after grinding, grinding wheel thickness dimensional accuracy control
Make ± 0.002mm；Inside and outside circle processing is carried out to obtained emery wheel blank, external diameter is made and is less than in step 2) outside steel mold die cavity
Footpath 0.05mm, internal diameter are more than steel mold die cavity internal diameter 0.05mm sandwich layer；
5) sandwich layer obtained to step 4) carries out pickling processes；Acid solution used in pickling processes is the nitre that mass fraction is 30%
Acid；Pickling processes are slight bite, further improve surface roughness, in favor of expanding the subsequently faying face with top layer
Product, improve bond strength；Sandwich layer after pickling is cleaned, derusting, oil removing and other impurity attachments, is dried for standby；
(2) prepared by top layer
Prepared by top layer include top layer raw material batch mixing-unilateral top layer cloth-sandwich layer dispensing-opposite side top layer cloth-emery wheel
Shaping-emery wheel solidification-inside and outside circle processing；Specifically comprise the following steps：
I) each raw material of resin bond wheel layer and diamond are well mixed, obtain treating materials；
II) in grinding wheel forming molds, the inventory for being first according to calculate is fed intake, and afterwards uniformly scrapes powder
It is flat；
III) it is put into the sandwich layer prepared in above-mentioned sandwich layer preparation process；
IV) throw one layer and step II again on sandwich layer) the top layer stand-by raw material of identical substance, powder is uniformly struck off；
V) mould top board is covered, progress is hot-forming, obtains emery wheel integral workblank；Hot press forming technology is：Hot pressing temperature
Spend for 220 DEG C, hot pressing time 25min, hot pressing pressure 25MPa；
VI) to step V) gained emery wheel integral workblank carry out curing process in an oven, curing process is：1 hour from room
To 120 DEG C, 120 DEG C are incubated 0.2 hour for temperature rise, are then warming up within 0.5 hour 200 DEG C and are incubated 5 hours, last furnace cooling is arrived
25 DEG C, come out of the stove；
VII) the overall emery wheel blank of preparation is then subjected to surface grinding processing and inside and outside circle processing, obtain finished grinding wheel.
Wherein overall emery wheel blank surface attrition process when, emery wheel wants regular turn-over, to ensure that the top layer machining state of emery wheel two is consistent.
Cutting on cutter special QFN encapsulation chips using obtained emery wheel, chip finished size is 8 × 8 ×
1.5mm.Under speed of mainshaft 30000rpm, cooling water flow 2.0L/min condition of work, cutting speed up to 250mm/s,
It is more than 5 times of existing resin abrasive cutting wheel speed；15 μm of chipping ＜ is cut, without molten tin, chipless lamination, copper lead is drawn
Hair meets the requirements and (is less than pin spacing 1/4), effective cutting length 5200m, be 8 times of the existing resin abrasive cutting wheel life-span with
On.
Embodiment 2
The metallic bond of the present embodiment is by copper cerium alloy powder that mass fraction is 30 parts, the copper lanthanum that mass fraction is 15 parts
Glass putty that alloyed powder, mass fraction are 5 parts, the titantium hydride that mass fraction is 2 parts, the potassium chloride composition that mass fraction is 5 parts；Its
The mass content of cerium is 6% in middle copper cerium alloy powder, and the mass content of lanthanum is 12% in copper lanthanum alloy powder.
Semiconductor packages in the present embodiment is processed by sandwich layer and is symmetricly set on two surfaces of sandwich layer with ultra-thin emery wheel
Top layer form, the composition on sandwich layer both sides top layer is identical.Core layer thickness is 0.2 ± 0.002mm, and core layer thickness accounts for emery wheel gross thickness
1/4.The porosity of sandwich layer is 15%.
Sandwich layer is made up of the above-mentioned metallic bond and diamond that mass fraction is 57 parts, wherein, diamond is in the core
Mass fraction be 8%, the granularity of diamond is 270/325 mesh.
Top layer by mass fraction be 55 parts phenol-formaldehyde resin powder, 10 parts of tungsten carbide powder, 6 parts of cubic boron nitride micro mist and
Diamond forms, and wherein mass fraction of the diamond in top layer is 50%, and the granularity of diamond is 230/270 mesh, tungsten carbide
The granularity of powder is 38 μm -45 μm；The granularity of cubic boron nitride micro mist is 10 μm -20 μm.
Semiconductor packages processing in the present embodiment is with Ultra-thin Sand size of wheel：56mm (external diameter) × 0.6mm (thickness) ×
40mm (internal diameter).
Above-mentioned semiconductor packages processing is as follows with the preparation method of ultra-thin emery wheel in the present embodiment：
(1) prepared by sandwich layer
1) raw material of formula ratio is weighed, is well mixed in batch mixer；
2) mixture obtained in step 1) is put into steel mold die cavity, uniformly after the material of stand, covers mould top board, put
Put on press bench, in the case where pressure is 75MPa, pressurize 2s is compressing, obtains green wheel；
3) green wheel for obtaining step 2), which is placed in Muffle furnace, carries out pressureless sintering, specifically using programming rate as
100 DEG C/h is warming up to 520 DEG C, is incubated 30min；Emery wheel is taken out after sintering from Muffle furnace, naturally cools to room temperature；Step 3) is real
In conjunction with agent powder metallurgy, while decompose titanium hydride powders；
4) the emery wheel blank for obtaining step 3) carries out Double End attrition process, after grinding, grinding wheel thickness dimensional accuracy control
Make ± 0.002mm；Inside and outside circle processing is carried out to obtained emery wheel blank, external diameter is made and is less than in step 2) outside steel mold die cavity
Footpath 0.1mm, internal diameter are more than steel mold die cavity internal diameter 0.1mm sandwich layer；
5) sandwich layer obtained to step 4) carries out pickling processes；Acid solution used in pickling processes is the nitre that mass fraction is 35%
Acid；Pickling processes are slight bite, further improve surface roughness, in favor of expanding the subsequently faying face with top layer
Product, improve bond strength；Sandwich layer after pickling is cleaned, derusting, oil removing and other impurity attachments, is dried for standby；
(2) prepared by top layer
Prepared by top layer include top layer raw material batch mixing-unilateral top layer cloth-sandwich layer dispensing-opposite side top layer cloth-emery wheel
Shaping-emery wheel solidification-inside and outside circle processing；Specifically comprise the following steps：
I) each raw material of resin bond wheel layer and diamond are well mixed, obtain treating materials；
II) in grinding wheel forming molds, the inventory for being first according to calculate is fed intake, and afterwards uniformly scrapes powder
It is flat；
III) it is put into the sandwich layer prepared in above-mentioned sandwich layer preparation process；
IV) throw one layer and step II again on sandwich layer) the top layer stand-by raw material of identical substance, powder is uniformly struck off；
V) mould top board is covered, progress is hot-forming, obtains emery wheel integral workblank；Hot press forming technology is：Hot pressing temperature
Spend for 170 DEG C, hot pressing time 15min, hot pressing pressure 10MPa；
VI) to step V) gained emery wheel integral workblank carry out curing process in an oven, curing process is：1 hour from room
To 120 DEG C, 120 DEG C are incubated 0.2 hour for temperature rise, are then warming up within 0.5 hour 180 DEG C and are incubated 5 hours, last furnace cooling is arrived
25 DEG C, come out of the stove；
VII) the overall emery wheel blank of preparation is then subjected to surface grinding processing and inside and outside circle processing, obtain finished grinding wheel.
Wherein overall emery wheel blank surface attrition process when, emery wheel wants regular turn-over, to ensure that the top layer machining state of emery wheel two is consistent.
QFN encapsulation chips are cut on cutter special using obtained emery wheel, chip finished size is 6 × 6 × 2mm.
Under speed of mainshaft 28000rpm, cooling water flow 2.0L/min condition of work, cutting speed is existing up to 230mm/s
More than 4 times of resin abrasive cutting wheel speed；14 μm of chipping ＜ is cut, without molten tin, chipless lamination, copper lead plucking meets
It it is more than 9 times of the existing resin abrasive cutting wheel life-span it is required that (being less than pin spacing 1/4), effective cutting length 4900m.
Embodiment 3
The metallic bond of the present embodiment is by copper cerium alloy powder that mass fraction is 35 parts, the copper lanthanum that mass fraction is 18 parts
Alloyed powder, the glass putty that mass fraction is 16 parts, 3 parts of titantium hydride, 4 parts of potassium chloride compositions；The matter of cerium wherein in copper cerium alloy powder
It is 8% to measure content, and the mass content of lanthanum is 10% in copper lanthanum alloy powder.
Semiconductor packages in the present embodiment is processed by sandwich layer and is symmetricly set on two surfaces of sandwich layer with ultra-thin emery wheel
Top layer form, the composition on sandwich layer both sides top layer is identical.Core layer thickness is 0.2 ± 0.002mm, and core layer thickness accounts for emery wheel gross thickness
1/2.The porosity of sandwich layer is 20%.
Sandwich layer is made up of the above-mentioned metallic bond and diamond that mass fraction is 76 parts, wherein, diamond is in the core
Mass fraction be 10%, the granularity of diamond is 325/400 mesh.
Top layer by mass fraction be 60 parts phenol-formaldehyde resin powder, 12 parts of tungsten carbide powder, 5 parts of cubic boron nitride micro mist and
Diamond forms, and wherein mass fraction of the diamond in top layer is 60%, and the granularity of diamond is 270/325 mesh, tungsten carbide
The granularity of powder is 38-45 μm；The granularity of cubic boron nitride micro mist is 10-20 μm.
Semiconductor packages processing in the present embodiment is with Ultra-thin Sand size of wheel：56mm (external diameter) × 0.6mm (thickness) ×
40mm (internal diameter).
Above-mentioned semiconductor packages processing is as follows with the preparation method of ultra-thin emery wheel in the present embodiment：
(1) prepared by sandwich layer
1) raw material of formula ratio is weighed, is well mixed in batch mixer；
2) mixture obtained in step 1) is put into steel mold die cavity, uniformly after the material of stand, covers mould top board, put
Put on press bench, in the case where pressure is 80MPa, pressurize 3s is compressing, obtains green wheel；
3) green wheel for obtaining step 2), which is placed in Muffle furnace, carries out pressureless sintering, specifically using programming rate as
100 DEG C/h is warming up to 650 DEG C, is incubated 40min；Emery wheel is taken out after sintering from Muffle furnace, naturally cools to room temperature；Step 3) is real
In conjunction with agent powder metallurgy, while decompose titanium hydride powders；
4) the emery wheel blank for obtaining step 3) carries out Double End attrition process, after grinding, grinding wheel thickness dimensional accuracy control
Make ± 0.002mm；Inside and outside circle processing is carried out to obtained emery wheel blank, external diameter is made and is less than in step 2) outside steel mold die cavity
Footpath 0.1mm, internal diameter are more than steel mold die cavity internal diameter 0.1mm sandwich layer；
5) sandwich layer obtained to step 4) carries out pickling processes；Acid solution used in pickling processes is the nitre that mass fraction is 32%
Acid；Pickling processes are slight bite, further improve surface roughness, in favor of expanding the subsequently faying face with top layer
Product, improve bond strength；Sandwich layer after pickling is cleaned, derusting, oil removing and other impurity attachments, is dried for standby；
(2) prepared by top layer
Prepared by top layer include top layer raw material batch mixing-unilateral top layer cloth-sandwich layer dispensing-opposite side top layer cloth-emery wheel
Shaping-emery wheel solidification-inside and outside circle processing；Specifically comprise the following steps：
I) each raw material of resin bond wheel layer and diamond are well mixed, obtain treating materials；
II) in grinding wheel forming molds, the inventory for being first according to calculate is fed intake, and afterwards uniformly scrapes powder
It is flat；
III) it is put into the sandwich layer prepared in above-mentioned sandwich layer preparation process；
IV) throw one layer and step II again on sandwich layer) the top layer stand-by raw material of identical substance, powder is uniformly struck off；
V) mould top board is covered, progress is hot-forming, obtains emery wheel integral workblank；Hot press forming technology is：Hot pressing temperature
Spend for 200 DEG C, hot pressing time 25min, hot pressing pressure 20MPa；
VI) to step V) gained emery wheel integral workblank carry out curing process in an oven, curing process is：1 hour from room
To 120 DEG C, 120 DEG C are incubated 0.2 hour for temperature rise, are then warming up within 0.5 hour 190 DEG C and are incubated 5 hours, last furnace cooling is arrived
25 DEG C, come out of the stove；
VII) the overall emery wheel blank of preparation is then subjected to surface grinding processing and inside and outside circle processing, obtain finished grinding wheel.
Wherein overall emery wheel blank surface attrition process when, emery wheel wants regular turn-over, to ensure that the top layer machining state of emery wheel two is consistent.
QFN encapsulation chips are cut on cutter special using obtained emery wheel, chip finished size is 8 × 8 × 2mm.
Under speed of mainshaft 32000rpm, cooling water flow 2.0L/min condition of work, cutting speed is existing up to 210mm/s
More than 6 times of resin abrasive cutting wheel speed；15 μm of chipping ＜ is cut, without molten tin, chipless lamination, copper lead plucking meets
It it is more than 7 times of the existing resin abrasive cutting wheel life-span it is required that (being less than pin spacing 1/4), effective cutting length 4200m.
Claims (10)
1. a kind of bonding agent, the bonding agent is metallic bond, it is characterised in that includes the component of following parts by weight：30-
40 parts of copper cerium alloys, 15-20 part copper lanthanum alloy, 5-16 parts glass putty, the titantium hydride of 2-4 parts by weight, the potassium chloride of 3-5 parts by weight.
2. the ultra-thin emery wheel of a kind of semiconductor packages processing, it is characterised in that including sandwich layer and be arranged on the table of core layer surface
Layer；The sandwich layer includes metallic bond and sandwich layer diamond, and the metallic bond combines to be as claimed in claim 1
Agent.
3. the ultra-thin emery wheel of semiconductor packages processing as claimed in claim 2, it is characterised in that the sandwich layer center core layer Buddha's warrior attendant
The mass percent of stone is 5-10%.
4. the ultra-thin emery wheel of semiconductor packages processing as claimed in claim 2, it is characterised in that the grain of the sandwich layer diamond
Spend for 200/230 mesh, 230/270 mesh, 270/325 mesh or 325/400 mesh.
5. the ultra-thin emery wheel of semiconductor packages as claimed in claim 2 processing, it is characterised in that the porosity of the sandwich layer is
15-25%.
6. the ultra-thin emery wheel of semiconductor packages processing as claimed in claim 2, it is characterised in that the core layer thickness accounts for emery wheel
The 1/4-1/2 of gross thickness.
7. the ultra-thin emery wheel of semiconductor packages processing as described in claim 2-6 any one, it is characterised in that the top layer
Including resinoid bond and top layer diamond, the particle diameter of the sandwich layer diamond is equal with the particle diameter of top layer diamond.
A kind of 8. preparation method of the ultra-thin emery wheel of semiconductor packages processing as claimed in claim 2, it is characterised in that including
Following steps：
1) metallic bond is well mixed with diamond raw material, it is compressing to obtain green wheel；
2) by green wheel temperature be 520-650 DEG C at pressureless sintering 30-50min, obtain emery wheel blank；
3) by emery wheel blank pickling, produce.
9. the preparation method of the ultra-thin emery wheel of semiconductor packages processing as claimed in claim 8, it is characterised in that the compacting
It is shaped to the pressurize 2-4s under 75-90MPa.
10. the preparation method of the ultra-thin emery wheel of semiconductor packages processing as claimed in claim 8, it is characterised in that the sand
Wheel green compact rise to sintering temperature with 100 DEG C/h heating rate.
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