CN116810617B - Silicon material processing technology - Google Patents
Silicon material processing technology Download PDFInfo
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- CN116810617B CN116810617B CN202310805370.1A CN202310805370A CN116810617B CN 116810617 B CN116810617 B CN 116810617B CN 202310805370 A CN202310805370 A CN 202310805370A CN 116810617 B CN116810617 B CN 116810617B
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- 239000002210 silicon-based material Substances 0.000 title claims abstract description 177
- 238000012545 processing Methods 0.000 title claims abstract description 44
- 238000005516 engineering process Methods 0.000 title claims abstract description 20
- 239000002173 cutting fluid Substances 0.000 claims abstract description 91
- 238000000227 grinding Methods 0.000 claims abstract description 82
- 239000002253 acid Substances 0.000 claims abstract description 40
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 31
- 238000005259 measurement Methods 0.000 claims abstract description 29
- 238000004080 punching Methods 0.000 claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000002994 raw material Substances 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 37
- 239000008367 deionised water Substances 0.000 claims description 36
- 229910021641 deionized water Inorganic materials 0.000 claims description 36
- 238000002156 mixing Methods 0.000 claims description 23
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 22
- 239000011831 acidic ionic liquid Substances 0.000 claims description 18
- QAIPRVGONGVQAS-DUXPYHPUSA-N trans-caffeic acid Chemical compound OC(=O)\C=C\C1=CC=C(O)C(O)=C1 QAIPRVGONGVQAS-DUXPYHPUSA-N 0.000 claims description 18
- -1 triethylamine tetrafluoroborate Chemical compound 0.000 claims description 17
- 239000010730 cutting oil Substances 0.000 claims description 15
- 239000002270 dispersing agent Substances 0.000 claims description 15
- LULAYUGMBFYYEX-UHFFFAOYSA-N 3-chlorobenzoic acid Chemical compound OC(=O)C1=CC=CC(Cl)=C1 LULAYUGMBFYYEX-UHFFFAOYSA-N 0.000 claims description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 238000004806 packaging method and process Methods 0.000 claims description 10
- ACEAELOMUCBPJP-UHFFFAOYSA-N (E)-3,4,5-trihydroxycinnamic acid Natural products OC(=O)C=CC1=CC(O)=C(O)C(O)=C1 ACEAELOMUCBPJP-UHFFFAOYSA-N 0.000 claims description 9
- GAQPYRAIOYJQGZ-UHFFFAOYSA-N S(=O)(=O)(O)O.C(C)N1CC=CC=C1 Chemical compound S(=O)(=O)(O)O.C(C)N1CC=CC=C1 GAQPYRAIOYJQGZ-UHFFFAOYSA-N 0.000 claims description 9
- 235000004883 caffeic acid Nutrition 0.000 claims description 9
- 229940074360 caffeic acid Drugs 0.000 claims description 9
- QAIPRVGONGVQAS-UHFFFAOYSA-N cis-caffeic acid Natural products OC(=O)C=CC1=CC=C(O)C(O)=C1 QAIPRVGONGVQAS-UHFFFAOYSA-N 0.000 claims description 9
- 239000012459 cleaning agent Substances 0.000 claims description 9
- ZTOKUMPYMPKCFX-CZNUEWPDSA-N (E)-17-[(2R,3R,4S,5S,6R)-6-(acetyloxymethyl)-3-[(2S,3R,4S,5S,6R)-6-(acetyloxymethyl)-3,4,5-trihydroxyoxan-2-yl]oxy-4,5-dihydroxyoxan-2-yl]oxyoctadec-9-enoic acid Chemical compound OC(=O)CCCCCCC/C=C/CCCCCCC(C)O[C@@H]1O[C@H](COC(C)=O)[C@@H](O)[C@H](O)[C@H]1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](COC(C)=O)O1 ZTOKUMPYMPKCFX-CZNUEWPDSA-N 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 7
- 229940006186 sodium polystyrene sulfonate Drugs 0.000 claims description 7
- RVGRUAULSDPKGF-UHFFFAOYSA-N Poloxamer Chemical compound C1CO1.CC1CO1 RVGRUAULSDPKGF-UHFFFAOYSA-N 0.000 claims description 6
- 229960000502 poloxamer Drugs 0.000 claims description 6
- 229920001983 poloxamer Polymers 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 18
- 230000000052 comparative effect Effects 0.000 description 58
- 238000002360 preparation method Methods 0.000 description 29
- 239000007789 gas Substances 0.000 description 19
- 238000005507 spraying Methods 0.000 description 12
- 239000007921 spray Substances 0.000 description 8
- 238000005498 polishing Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000009776 industrial production Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- MFQSMRYUGYNRIK-UHFFFAOYSA-K 1-hexyl-3-methylimidazol-3-ium phosphate Chemical compound CCCCCCN1C=C[N+](=C1)C.CCCCCCN1C=C[N+](=C1)C.CCCCCCN1C=C[N+](=C1)C.[O-]P(=O)([O-])[O-] MFQSMRYUGYNRIK-UHFFFAOYSA-K 0.000 description 1
- 241000251468 Actinopterygii Species 0.000 description 1
- WBYWAXJHAXSJNI-SREVYHEPSA-N Cinnamic acid Chemical compound OC(=O)\C=C/C1=CC=CC=C1 WBYWAXJHAXSJNI-SREVYHEPSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 235000013985 cinnamic acid Nutrition 0.000 description 1
- 229930016911 cinnamic acid Natural products 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XFLNVMPCPRLYBE-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate;tetrahydrate Chemical compound O.O.O.O.[Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O XFLNVMPCPRLYBE-UHFFFAOYSA-J 0.000 description 1
- 230000008542 thermal sensitivity Effects 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The application relates to the technical field of silicon materials, and particularly discloses a silicon material processing technology. The silicon material processing technology comprises the following steps: firstly, adopting cutting fluid #3 to perform rough grinding processing on a raw material, adopting cutting fluid #1 to perform first grinding on a silicon material, and performing outer diameter processing; punching the silicon material by using a cutting fluid #2, etching an acid hole of the silicon material by using an acid solution, grinding the silicon material twice by using the cutting fluid #1, and then performing outer section diameter processing; finally, grinding the silicon material for the fourth time by adopting the cutting fluid #1 to obtain a finished product; in the processing process, the silicon material which is ground and punched is subjected to ultrasonic cleaning, and the measurement is carried out in a contact type and non-contact type combined mode, so that the reasonable processing allowance is ensured; the silicon material obtained by the processing technology has excellent punching effect and wide market prospect.
Description
Technical Field
The present application relates to the field of silicon materials, and more particularly, to a silicon material processing technique.
Background
With the development of technology, the demand of the silicon material industry is also increasing. Because the silicon material has excellent properties such as unidirectional conductivity, thermal sensitivity, photoelectric property, doping property and the like, the silicon material can be grown into large-size high-purity crystals, and is widely applied to a plurality of fields such as electronics and electronic products, electric power, aerospace, energy sources, automobiles, communication and the like.
The holes in the silicon material can be used for mounting corresponding brackets, support structures or fixtures, and can also be used for manufacturing filters, reactors and other devices. At present, the punching technology of the silicon material often causes the problems of rough section knife mark, broken layer, deep damaged layer, large residual stress, broken pieces, broken edges, broken roots and the like, increases the working procedures of grinding, polishing and the like, wastes materials and reduces the processing efficiency and the yield; the chip and the surface can generate strong adsorption effect due to the effect of the chip and the surface energy of the new cutting surface, the chip is not easy to peel off and is taken away by the cutting fluid, meanwhile, the cutting speed is also hindered, and the adverse phenomena of oblique hole and larger aperture error occur; particularly, the step holes are drilled on the silicon material, so that the processing difficulty is increased, and the punching effect is more unsatisfactory. Therefore, it is necessary to solve the problem of poor punching effect of the existing silicon material and further expand the application market of the silicon material.
Disclosure of Invention
In order to solve the problem that the punching effect of the existing silicon material is poor, the application provides a silicon material processing technology.
The application provides a silicon material processing technology, which adopts the following technical scheme:
the silicon material processing technology comprises the following steps:
s1, checking whether the appearance of a raw material is damaged or not, adopting cutting fluid #3 to perform rough grinding processing on the raw material, and measuring whether the plane of the roughly ground silicon material is qualified or not;
s2, grinding the silicon material for the first time by adopting the cutting fluid #1, and measuring the thickness of the ground silicon material to determine whether the silicon material is qualified or not;
s3, carrying out outer diameter processing on the silicon material by adopting cutting fluid #1, and measuring whether the outer diameter of the processed silicon material is qualified or not;
s4, punching key holes of the silicon material by adopting cutting fluid #2, then performing ultrasonic cleaning, and measuring the key holes of the silicon material;
s5, punching the silicon material by adopting a cutting fluid #2, ultrasonically cleaning the punched silicon material, and measuring a non-contact hole of the punched material;
s6, etching acid holes on the silicon material by using acid liquor, and checking whether broken scratches exist on the surface of the silicon material by appearance after etching;
s7, grinding the silicon material for the second time by adopting the cutting fluid #1, performing ultrasonic cleaning after grinding, and performing contact thickness measurement on the silicon material;
s8, grinding the silicon material for the third time by adopting the cutting fluid #1, performing ultrasonic cleaning after grinding, and performing contact thickness measurement on the silicon material;
s9, adopting cutting fluid #1 to process the outer section diameter of the silicon material, performing ultrasonic cleaning on the silicon material, and performing contact type outer section diameter measurement on the silicon material;
s10, after grinding the silicon material for the fourth time by adopting the cutting fluid #1, respectively adopting deionized water and a cleaning agent to carry out ultrasonic cleaning, and carrying out non-contact shape measurement on the silicon material;
s11, carrying out contact type integral measurement on the silicon material, putting the finished product into a packaging bag, injecting deionized water, sealing, packaging and leaving a warehouse.
By adopting the technical scheme, the cutting fluid #1, the cutting fluid #2 and the cutting fluid #3 are adopted for multiple grinding and punching treatment, and acid liquor is adopted for hole etching, so that the shape and the pore size of a product required by a silicon material are achieved; meanwhile, a contact type and non-contact type combined mode is adopted, the processing amount is continuously adjusted, and the reasonable processing allowance is ensured; in addition, after each grinding, ultrasonic cleaning is carried out, so that adverse effects of grinding and punching on a processing technology are greatly reduced, the aperture size precision of the silicon material is high, the quality is high, and the qualification rate of products is improved; the processing technology of the silicon material obviously improves the punching effect of the silicon material, is suitable for industrial production, and has wide application prospect.
Preferably, the cutting fluid #1 is prepared by mixing deionized water and Hysol X cutting oil in a mass ratio of 1000:1-5.
Through adopting above-mentioned technical scheme, the cutting fluid #1 of this application adopts Hysol X cutting oil to mix with deionized water according to certain mass ratio, and the cutting fluid #1 that obtains has excellent lubrication, cooling and buffering effect, can keep the cleanness on silicon material surface, has reduced the production of microcrack, has improved processing technology's efficiency.
Preferably, the cutting fluid #2 is prepared by mixing deionized water and M COOL S-3900 cutting oil in a mass ratio of 1000:2-7.
Through adopting above-mentioned technical scheme, the cutting fluid #2 of this application adopts M COOL S-3900 cutting oil to mix with deionized water according to special mass ratio, and the cutting fluid #2 that obtains has excellent high temperature lubricity, cooling nature and chip removal nature, has greatly improved hole site, aperture and the defect in hole inside, has shown the punching effect that has improved the silicon material.
Preferably, the cutting fluid #3 is prepared by mixing deionized water, silicon carbide, nano lanthanum oxide and a dispersing agent in a mass ratio of 3-4:1:0.5-1:0.1-0.3.
Through adopting above-mentioned technical scheme, cutting fluid #3 of this application is with carborundum, nanometer lanthanum oxide, dispersant and water mixture, regard carborundum, nanometer lanthanum oxide as common abrasive material, and synergistic has effectively reduced the superficial crack damage of silicon material, and then obtains high-quality processing surface, greatly reduced the disqualification rate of finished product.
Preferably, the dispersing agent is prepared by mixing sodium polystyrene sulfonate and sophorolipid in a mass ratio of 3:1-4.
Through adopting above-mentioned technical scheme, the dispersing agent of this application is obtained by polystyrene sodium sulfonate and sophorolipid mixing, and the two interact has showing the dispersibility that has improved carborundum and nanometer lanthanum oxide, guarantees the stability of cutting fluid #3 to ensure can not fish tail the surface of silicon material, obtain the surface profile effect of high accuracy more easily.
Preferably, the acid liquor is prepared by the following method:
adding 2.4-3.6 parts by weight of acidic ionic liquid, 1-3 parts by weight of caffeic acid, 2-4 parts by weight of tetra sodium ethylenediamine tetraacetate, 10-20 parts by weight of m-chlorobenzoic acid, 1-3 parts by weight of poloxamer and 4-7 parts by weight of isopropanol into 100-200 parts by weight of deionized water, and performing ultrasonic dispersion for 10-30min to obtain acid liquor.
Through adopting above-mentioned technical scheme, the acidizing fluid of this application uses acid ion liquid, caffeic acid, ethylenediamine tetraacetic acid tetrasodium, the cross-m-chlorobenzoic acid, poloxamer as the raw materials, and the interact not only can improve acidity, effectively etches the hole of silicon material, can keep the surface of silicon material to keep bright and clean and aperture allowance reasonable moreover, is favorable to carrying out subsequent processing technology more.
Preferably, the acidic ionic liquid is a mixture of N-ethylpyridine bisulfate, triethylamine tetrafluoroborate and 1-hexyl-3-methylimidazole hexafluorophosphate in a mass ratio of 1-2:2-3:4.
By adopting the technical scheme, the N-ethylpyridine bisulfate, triethylamine tetrafluoroborate and 1-hexyl-3-methylimidazole hexafluorophosphate are used as the acidic ionic liquid, and the three are different in structure and mutually synergistic, so that the acidity can be improved, caffeic acid can be cooperated, the pore structure of the silicon material can be etched together, the complexing capacity on metal ions is high, and impurities attached to the surface of the silicon material can be removed; in addition, the high-temperature acid etching device has high thermal stability, and can meet the requirement of acid etching at a high temperature, so that the processing efficiency is improved.
Preferably, in the step S1, a chemical mechanical polishing mode is adopted for rough polishing, the polishing pressure is 150-250kPa, the polishing temperature is 40-50 ℃, the polishing pad rotating speed is 22-28r/min, the grinding wheel rotating speed is 50-60r/min, and the flow rate of the cutting fluid #3 is controlled to be 9-11L/min.
Preferably, the etching temperature in the step S6 is 50-70 ℃ and the etching time is 1-2h.
Preferably, the ultrasonic frequency of the ultrasonic cleaning is 0.6-1MHz, the temperature is 40-60 ℃ and the time is 10-30min.
By adopting the technical scheme, the punching effect of the silicon material is effectively improved, the processing technology efficiency is improved, the production cost is reduced, the safety and environmental protection are realized, and the method is suitable for industrial production.
In summary, the present application has the following beneficial effects:
the cutting fluid #3 is adopted, coarse grinding is carried out in a chemical mechanical grinding mode, the cutting fluid #2 is adopted for punching, acid liquor is also adopted for hole etching, the cutting fluid #1 is adopted for four times of grinding in a penetrating mode, machining allowance is reasonably controlled, the precision of the size of the silicon material is effectively improved, meanwhile, different cutting fluids are adopted, damage to cracks on the surface layer of the silicon material is reduced, the surface of the silicon material and the inside of a hole are smooth and flat, the phenomenon that the punching effect of the existing silicon material is poor is remarkably improved, the qualification rate of the obtained product is high, the quality is good, and the market prospect is wide. The silicon material processing technology has the advantages of simple steps and low cost, and is suitable for industrial production.
Detailed Description
The present application will be described in further detail with reference to examples and examples.
Preparation examples 1-3 and comparative examples 1-6 provide a method for preparing an acid solution.
Preparation example 1
The acid liquor is prepared by the following method:
adding 2.4kg of acidic ionic liquid, 1kg of caffeic acid, 2kg of tetra sodium ethylenediamine tetraacetate, 10kg of m-chlorobenzoic acid, 1kg of poloxamer and 4kg of isopropanol into 100kg of deionized water, and performing ultrasonic dispersion for 10min at an ultrasonic frequency of 2MHz to obtain an acid solution;
wherein the acidic ionic liquid is a mixture of N-ethylpyridine bisulfate, triethylamine tetrafluoroborate and 1-hexyl-3-methylimidazole hexafluorophosphate in a mass ratio of 1:2:4.
Preparation example 2
The acid liquor is prepared by the following method:
adding 3kg of acidic ionic liquid, 2kg of caffeic acid, 3kg of tetra sodium ethylenediamine tetraacetate, 15kg of m-chlorobenzoic acid, 2kg of poloxamer and 5.5kg of isopropanol into 150kg of deionized water, and performing ultrasonic dispersion for 20min at an ultrasonic frequency of 4MHz to obtain an acid solution;
wherein the acidic ionic liquid is a mixture of N-ethylpyridine bisulfate, triethylamine tetrafluoroborate and 1-hexyl-3-methylimidazole hexafluorophosphate in a mass ratio of 1.5:2.5:4.
Preparation example 3
The acid liquor is prepared by the following method:
adding 3.6kg of acidic ionic liquid, 3kg of caffeic acid, 4kg of tetra sodium ethylenediamine tetraacetate, 20kg of m-chlorobenzoic acid, 3kg of poloxamer and 7kg of isopropanol into 200kg of deionized water, and performing ultrasonic dispersion for 30min at an ultrasonic frequency of 5MHz to obtain an acid solution;
wherein the acidic ionic liquid is a mixture of N-ethylpyridine bisulfate, triethylamine tetrafluoroborate and 1-hexyl-3-methylimidazole hexafluorophosphate in a mass ratio of 2:3:4.
Comparative preparation example 1
Comparative preparation 1 differs from preparation 1 only in that caffeic acid was replaced with an acidic ionic liquid of equal mass.
Comparative preparation example 2
Comparative preparation 2 differs from preparation 1 only in that the acidic ionic liquid is replaced with equal mass of caffeic acid.
Comparative preparation example 3
Comparative preparation 3 differs from preparation 1 only in that the acidic ionic liquid consists of a mixture of N-ethylpyridine bisulfate and triethylamine tetrafluoroborate in a mass ratio of 1:2.
Comparative preparation example 4
Comparative preparation 4 differs from preparation 1 only in that the acidic ionic liquid consists of a mixture of N-ethylpyridine bisulfate and 1-hexyl-3-methylimidazolium phosphate in a mass ratio of 1:4.
Comparative preparation example 5
Comparative preparation 5 differs from preparation 1 only in that the acidic ionic liquid consists of a mixture of triethylamine tetrafluoroborate and 1-hexyl-3-methylimidazolium hexafluorophosphate in a mass ratio of 1:2.
Comparative preparation example 6
The acid liquor is prepared by the following method:
1kg of hydrofluoric acid with the mass fraction of 2%, 2kg of hydrochloric acid with the mass fraction of 5%, 3kg of sodium fluoride and 15kg of hydrogen peroxide with the mass fraction of 3% are added into 100kg of deionized water, and ultrasonic dispersion is carried out for 10min at the ultrasonic frequency of 2MHz, so as to obtain acid liquor.
Examples 1-3 provide silicon material processing techniques.
Taking a gas spray header for a plasma reactor as an example, wherein the raw material of the gas spray header is silicon material, the middle of the gas spray header is provided with a plurality of concentric stepped through holes, the diameter of each small hole is 0.5mm, and the diameter of each large hole is 0.8mm; the periphery of the gas spray header is provided with key holes, and the aperture is 5mm.
Example 1
The silicon material processing technology comprises the following steps:
s1, checking whether the appearance of a raw material is damaged or not, performing rough grinding on the raw material by adopting a cutting fluid #3, performing chemical mechanical grinding on the raw material, wherein the grinding pressure is 150kPa, the grinding temperature is 40 ℃, the rotating speed of a grinding pad is 22r/min, the rotating speed of a grinding wheel is 50r/min, controlling the flow of the cutting fluid #3 at 9L/min, and then measuring whether the plane of the roughly ground silicon material is qualified or not;
s2, grinding the silicon material for the first time by adopting a cutting fluid #1, controlling the air pressure to be 0.4MPa and the grinding rotating speed to be 10r/min by adopting a pneumatic grinder, and measuring whether the thickness of the ground silicon material is qualified or not;
s3, performing outer diameter processing on the silicon material by adopting cutting fluid #1 on a CNC workbench, and measuring whether the outer diameter of the processed silicon material is qualified or not by adopting a non-contact three-coordinate measuring instrument;
s4, punching key holes of the silicon material by using the cutting fluid #2, and punching the silicon material by using the cutting fluid #2 in a spraying mode, wherein the spraying amount is 6mL/min; then ultrasonic cleaning is carried out on the silicon material for 5min at the ultrasonic frequency of 0.6MHz and the temperature of 30 ℃, and the key holes of the silicon material are measured by adopting a non-contact three-coordinate measuring instrument;
s5, after the silicon material is fixed by a clamp, punching the silicon material by adopting a cutting fluid #2 in a spraying mode, wherein the spraying amount is 1mL/min, small holes (through holes) are punched firstly, then concentric large holes are punched, ultrasonic cleaning is carried out on the punched silicon material for 10min at the ultrasonic frequency of 0.6MHz and the temperature of 40 ℃, and then non-contact hole measurement is carried out on the punched silicon material by adopting a non-contact three-coordinate measuring instrument;
s6, etching acid holes on the silicon material by using acid liquor, wherein the etching temperature is 50 ℃, the etching time is 1h, and after etching, appearance inspection is performed on the surface of the silicon material to determine whether broken scratches exist or not;
s7, grinding the silicon material for the second time by adopting a cutting fluid #1, controlling the air pressure to be 0.4MPa by adopting a pneumatic grinder, controlling the grinding rotation speed to be 10r/min, performing ultrasonic cleaning for 10min by adopting an ultrasonic frequency to be 0.6MHz and the temperature to be 60 ℃ after grinding, and then performing contact thickness measurement on the silicon material by adopting an image measuring instrument;
s8, grinding the silicon material for the third time by adopting a cutting fluid #1, adopting a pneumatic grinder, controlling the air pressure to be 0.4MPa, controlling the grinding rotation speed to be 10r/min, performing ultrasonic cleaning for 10min at the ultrasonic frequency of 0.6MHz and the temperature of 40 ℃ after grinding, and then performing contact thickness measurement on the silicon material by adopting an image measuring instrument;
s9, performing outer section diameter processing on the silicon material by adopting cutting fluid #1, then performing ultrasonic cleaning for 10min at the ultrasonic frequency of 0.6MHz and the temperature of 40 ℃, and performing contact outer section diameter measurement on the silicon material by adopting an image measuring instrument;
s10, grinding the silicon material for the fourth time by adopting a cutting fluid #1, adopting a pneumatic grinder, controlling the air pressure to be 0.4MPa, controlling the grinding rotation speed to be 20r/min, and then firstly adopting deionized water, and carrying out first ultrasonic cleaning on the silicon material for 10min at the ultrasonic frequency of 0.6MHz and the temperature of 40 ℃; then cleaning the silicon material by adopting a cleaning agent at the ultrasonic frequency of 0.6MHz and the temperature of 50 ℃ for 30min; finally, a non-contact three-coordinate measuring instrument is adopted to carry out non-contact shape measurement on the silicon material;
s11, adopting an image measuring instrument to carry out contact type integral measurement on the silicon material, putting the finished product into a packaging bag, injecting deionized water, sealing, packaging and leaving a warehouse;
wherein the cutting fluid #1 is obtained by stirring and mixing deionized water and Hysol X cutting oil in a mass ratio of 1000:1; cutting fluid #2 is prepared by mixing deionized water and M COOL S-3900 cutting oil in a mass ratio of 500:1; the cutting fluid #3 is prepared by mixing deionized water, GC #600 silicon carbide powder and nano lanthanum oxide with a dispersing agent according to the mass ratio of 3:1 to 0.5:0.1, and the dispersing agent is prepared by mixing sodium polystyrene sulfonate with sophorolipid according to the mass ratio of 3:1; acid liquor was prepared from preparation 1; the cleaning agent is TFD4.
Example 2
The silicon material processing technology comprises the following steps:
s1, checking whether the appearance of a raw material is damaged or not, performing rough grinding on the raw material by adopting a cutting fluid #3, performing chemical mechanical grinding on the raw material at a grinding pressure of 200kPa, a grinding temperature of 45 ℃, a grinding pad rotating speed of 25r/min and a grinding wheel rotating speed of 55r/min, controlling the flow rate of the cutting fluid #3 at 10L/min, and then measuring whether the plane of the roughly ground silicon material is qualified or not;
s2, grinding the silicon material for the first time by adopting a cutting fluid #1, controlling the air pressure to be 0.5MPa and the grinding rotating speed to be 30r/min by adopting a pneumatic grinder, and measuring whether the thickness of the ground silicon material is qualified or not;
s3, performing outer diameter processing on the silicon material by adopting cutting fluid #1 on a CNC workbench, and measuring whether the outer diameter of the processed silicon material is qualified or not by adopting a non-contact three-coordinate measuring instrument;
s4, punching key holes of the silicon material by using the cutting fluid #2, and punching the silicon material by using the cutting fluid #2 in a spraying mode, wherein the spraying amount is 8mL/min; then ultrasonic cleaning is carried out on the silicon material for 8min at the ultrasonic frequency of 0.6MHz and the temperature of 40 ℃, and the key holes of the silicon material are measured;
s5, after the silicon material is fixed by a clamp, punching the silicon material by adopting a cutting fluid #2 in a spraying mode, wherein the spraying amount is 3mL/min, small holes (through holes) are punched firstly, then concentric large holes are punched, ultrasonic cleaning is carried out on the punched silicon material for 20min at the ultrasonic frequency of 0.8MHz and the temperature of 50 ℃, and then non-contact hole measurement is carried out on the punched material by adopting a non-contact three-coordinate measuring instrument;
s6, etching acid holes on the silicon material by using acid liquor, wherein the etching temperature is 60 ℃, the etching time is 1.5h, and appearance inspection is performed on the surface of the silicon material after etching to determine whether broken scratches exist;
s7, grinding the silicon material for the second time by adopting a cutting fluid #1, controlling the air pressure to be 0.5MPa by adopting a pneumatic grinder, controlling the grinding rotating speed to be 30r/min, performing ultrasonic cleaning for 20min at the ultrasonic frequency of 0.8MHz and the temperature of 50 ℃ after grinding, and then performing contact thickness measurement on the silicon material by adopting an image measuring instrument;
s8, grinding the silicon material for the third time by adopting a cutting fluid #1, adopting a pneumatic grinder, controlling the air pressure to be 0.5MPa, controlling the grinding rotation speed to be 25r/min, carrying out ultrasonic cleaning for 20min at the temperature of 45 ℃ at the ultrasonic frequency of 0.7MHz after grinding, and then adopting an image measuring instrument to carry out contact thickness measurement on the silicon material;
s9, performing outer section diameter machining on the silicon material by adopting cutting fluid #1, performing ultrasonic cleaning for 15min at the ultrasonic frequency of 0.9MHz and the temperature of 55 ℃, and performing contact outer section diameter measurement on the silicon material by adopting an image measuring instrument;
s10, grinding the silicon material for the fourth time by adopting a cutting fluid #1, adopting a pneumatic grinder, controlling the air pressure to be 0.5MPa, controlling the grinding rotation speed to be 20r/min, and then firstly adopting deionized water, and carrying out first ultrasonic cleaning on the silicon material for 20min at the ultrasonic frequency of 0.8MHz and the temperature of 55 ℃; then cleaning the silicon material by adopting a cleaning agent at the ultrasonic frequency of 0.8MHz and the temperature of 60 ℃ for 10min; finally, a non-contact three-coordinate measuring instrument is adopted to carry out non-contact shape measurement on the silicon material;
s11, adopting an image measuring instrument to carry out contact type integral measurement on the silicon material, putting the finished product into a packaging bag, injecting deionized water, sealing, packaging and leaving a warehouse;
wherein the cutting fluid #1 is prepared by mixing deionized water and Hysol X cutting oil in a mass ratio of 1000:3; cutting fluid #2 is prepared by mixing deionized water and M COOL S-3900 cutting oil in a mass ratio of 500:3; the cutting fluid #3 is prepared by mixing deionized water, GC #600 silicon carbide powder and nano lanthanum oxide with a dispersing agent according to the mass ratio of 3.5:1:0.8:0.2, and the dispersing agent is prepared by mixing sodium polystyrene sulfonate with sophorolipid according to the mass ratio of 1:1; acid liquor was prepared from preparation 2; the cleaning agent is TFD4.
Example 3
The silicon material processing technology comprises the following steps:
s1, checking whether the appearance of a raw material is damaged or not, performing rough grinding on the raw material by adopting a cutting fluid #3, performing chemical mechanical grinding on the raw material, wherein the grinding pressure is 250kPa, the grinding temperature is 50 ℃, the rotating speed of a grinding pad is 28r/min, the rotating speed of a grinding wheel is 60r/min, controlling the flow of the cutting fluid #3 at 11L/min, and then measuring whether the plane of the roughly ground silicon material is qualified or not;
s2, grinding the silicon material for the first time by adopting a cutting fluid #1, controlling the air pressure to be 0.6MPa by adopting a pneumatic grinder, controlling the grinding rotating speed to be 40r/min, and measuring the thickness of the ground silicon material to be qualified;
s3, performing outer diameter processing on the silicon material by adopting cutting fluid #1 on a CNC workbench, and measuring whether the outer diameter of the processed silicon material is qualified or not by adopting a non-contact three-coordinate measuring instrument;
s4, punching key holes of the silicon material by using the cutting fluid #2, and punching the silicon material by using the cutting fluid #2 in a spraying mode, wherein the spraying amount is 10mL/min; then ultrasonic cleaning is carried out on the silicon material for 10min at the ultrasonic frequency of 1MHz and the temperature of 50 ℃, and the key holes of the silicon material are measured;
s5, after the silicon material is fixed by a clamp, punching the silicon material by adopting a cutting fluid #2 in a spraying mode, wherein the spraying amount is 5mL/min, small holes (through holes) are punched firstly, then concentric large holes are punched, ultrasonic cleaning is carried out on the punched silicon material for 30min at the ultrasonic frequency of 1MHz and the temperature of 60 ℃, and then non-contact hole measurement is carried out on the punched material by adopting a non-contact three-coordinate measuring instrument;
s6, etching acid holes on the silicon material by using acid liquor, wherein the etching temperature is 70 ℃, the etching time is 2 hours, and after etching, appearance inspection is performed on the surface of the silicon material to determine whether broken scratches exist or not;
s7, grinding the silicon material for the second time by adopting a cutting fluid #1, controlling the air pressure to be 0.6MPa by adopting a pneumatic grinder, controlling the grinding rotating speed to be 40r/min, performing ultrasonic cleaning for 30min by adopting an ultrasonic frequency to be 1MHz and the temperature to be 60 ℃ after grinding, and then performing contact thickness measurement on the silicon material by adopting an image measuring instrument;
s8, grinding the silicon material for the third time by adopting a cutting fluid #1, adopting a pneumatic grinder, controlling the air pressure to be 0.6MPa, controlling the grinding rotation speed to be 40r/min, performing ultrasonic cleaning for 30min by adopting an ultrasonic frequency to be 1MHz and the temperature to be 60 ℃ after grinding, and then performing contact thickness measurement on the silicon material by adopting an image measuring instrument;
s9, performing outer section diameter machining on the silicon material by adopting a cutting fluid #1, performing ultrasonic cleaning for 30min at the ultrasonic frequency of 1MHz and the temperature of 60 ℃, and performing contact outer section diameter measurement on the silicon material by adopting an image measuring instrument;
s10, grinding the silicon material for the fourth time by adopting a cutting fluid #1, adopting a pneumatic grinder, controlling the air pressure to be 0.6MPa, controlling the grinding rotation speed to be 40r/min, and then firstly adopting deionized water, and carrying out first ultrasonic cleaning on the silicon material for 30min at the ultrasonic frequency of 1MHz and the temperature of 60 ℃; then cleaning the silicon material by adopting a cleaning agent at the ultrasonic frequency of 1MHz and the temperature of 40 ℃ for 30min; finally, a non-contact three-coordinate measuring instrument is adopted to carry out non-contact shape measurement on the silicon material;
s11, adopting an image measuring instrument to carry out contact type integral measurement on the silicon material, putting the finished product into a packaging bag, injecting deionized water, sealing, packaging and leaving a warehouse;
wherein the cutting fluid #1 is prepared by mixing deionized water and Hysol X cutting oil in a mass ratio of 200:1; cutting fluid #2 is prepared by mixing deionized water and M COOL S-3900 cutting oil in a mass ratio of 1000:7; the cutting fluid #3 is prepared by mixing deionized water, GC #600 silicon carbide powder and nano lanthanum oxide with a dispersing agent according to the mass ratio of 4:1:0.3, and the dispersing agent is prepared by mixing sodium polystyrene sulfonate with the mass ratio of 3:4 with sophorolipid; acid liquor was prepared from preparation 3; the cleaning agent is TFD4.
To verify the effect of the silicon material processing process provided herein, applicants set comparative examples 1-12, wherein:
comparative example 1
Comparative example 1 differs from example 1 only in that: acid liquor was prepared from comparative preparation 1.
Comparative example 2
Comparative example 2 differs from example 1 only in that: acid liquor was prepared from comparative preparation 2.
Comparative example 3
Comparative example 3 differs from example 1 only in that: acid liquor was prepared from comparative preparation 3.
Comparative example 4
Comparative example 4 differs from example 1 only in that: acid liquor was prepared from comparative preparation 4.
Comparative example 5
Comparative example 5 differs from example 1 only in that: acid liquor was prepared from comparative preparation 5.
Comparative example 6
Comparative example 6 differs from example 1 only in that: acid solution was prepared from comparative preparation 6 and the etching temperature at step S6 was 25 ℃.
Comparative example 7
Comparative example 7 differs from example 1 only in that: cutting fluid #2 was obtained by mixing deionized water and M COOL S-3900 cutting oil in a mass ratio of 2000:1.
Comparative example 8
Comparative example 8 differs from example 1 only in that: cutting fluid #2 was prepared by mixing deionized water and M COOL S-3900 cutting oil in a mass ratio of 50:1.
Comparative example 9
Comparative example 9 differs from example 1 only in that: the dispersing agent is sodium polystyrene sulfonate only.
Comparative example 10
Comparative example 10 differs from example 1 only in that: the dispersing agent is only sophorolipid.
Comparative example 11
Comparative example 11 differs from example 1 only in that: the nano lanthanum oxide is replaced by GC #600 silicon carbide powder with equal mass.
Comparative example 12
Comparative example 12 differs from example 1 only in that: the GC #600 silicon carbide powder is replaced by nano lanthanum oxide with equal mass.
The processing result shows that: the gas spray header obtained in the embodiment 1-3 has the small hole diameter of 0.498-0.502mm and the large hole diameter of 0.799-0.801mm; the keyhole aperture is 4.997-5.001mm, the processing error is small, and the surface of the silicon material is smooth and has no crack; the hole site, the aperture and the inside of the hole are free from defects, the punching effect is good, and the product quality is high.
The gas spray header obtained in comparative example 1 has a small hole diameter of 0.487mm, a large hole diameter of 0.789mm and a keyhole aperture of 4.987mm; the gas shower head obtained in comparative example 2 has a small hole diameter of 0.491mm, a large hole diameter of 0.795mm and a keyhole aperture of 4.993mm, and compared with the gas shower head obtained in comparative example 1 and comparative example 2, the gas shower head has larger processing errors and slightly rough inner walls of holes, which indicates that the interaction of acidic ionic liquid and cinnamic acid is beneficial to improving the hole etching effect and is more beneficial to the aperture reaching the processing standard.
The gas spray header obtained in comparative example 3-5 has a small hole diameter of 0.490-0.493mm, a large hole diameter of 0.791-0.794mm, and a keyhole aperture of 4.992-4.994mm, and compared with example 1, comparative example 3-5 has lower aperture accuracy, which shows that the mixture of N-ethylpyridine bisulfate, triethylamine tetrafluoroborate and 1-hexyl-3-methylimidazole hexafluorophosphate is used as acidic ionic liquid, and the three cooperate to ensure better punching effect.
The gas shower head obtained in comparative example 6 has small holes with the diameter of 0.525mm, large holes with the diameter of 0.824mm and the keyhole aperture of 5.124mm, and compared with the gas shower head obtained in example 1, the gas shower head has oversized aperture, visible spots and microcracks on the surface of a silicon material, and uneven inner walls of the apertures, so that the ideal hole etching effect can be achieved by the acid liquid formula.
The gas shower head obtained in comparative example 7 has a small hole diameter of 0.496mm, a large hole diameter of 0.791mm, a keyhole aperture of 4.993mm, the gas shower head obtained in comparative example 8 has a small hole diameter of 0.510mm, a large hole diameter of 0.808mm, a keyhole aperture of 5.005mm, and the silicon materials obtained in comparative examples 7 and 8 have larger aperture errors and poor hole morphology, indicating that deionized water and M COOL S-3900 cutting oil are mixed in a mass ratio of 1000:2-7, and cutting fluid #2 excellent in performance can be obtained.
The gas spray header obtained in comparative example 9 has a small hole diameter of 0.497mm, a large hole diameter of 0.801mm and a keyhole aperture of 4.998mm; the gas shower head obtained in comparative example 10 has a small hole diameter of 0.496mm, a large hole diameter of 0.798mm, and a keyhole aperture of 4.997mm, and the silicon material obtained in example 1 has smoother surface and no microcrack than that obtained in example 1, which indicates that the cutting effect of cutting fluid #3 can be improved by using sodium polystyrene sulfonate and sophorolipid together as a dispersant.
The gas shower head obtained in comparative example 11 has a small hole diameter of 0.494mm, a large hole diameter of 0.798mm and a keyhole aperture of 5.006mm; the gas shower head obtained in comparative example 12 has a small hole diameter of 0.496mm, a large hole diameter of 0.796mm and a keyhole aperture of 5.006mm; compared with example 1 and comparative examples 11 and 12, the obtained silicon material has more microcracks on the surface, which means that the GC #600 silicon carbide powder and the nano lanthanum oxide are used as abrasive materials together, and the damage of grinding on the surface of the silicon material can be remarkably reduced in the rough grinding process.
The present embodiment is merely illustrative of the present application and is not intended to be limiting, and those skilled in the art, after having read the present specification, may make modifications to the present embodiment without creative contribution as required, but is protected by patent laws within the scope of the claims of the present application.
Claims (2)
1. The silicon material processing technology is characterized by comprising the following steps:
s1, checking whether the appearance of a raw material is damaged or not, adopting cutting fluid #3 to perform rough grinding processing on the raw material, and measuring whether the plane of the roughly ground silicon material is qualified or not;
s2, grinding the silicon material for the first time by adopting the cutting fluid #1, and measuring the thickness of the ground silicon material to determine whether the silicon material is qualified or not;
s3, carrying out outer diameter processing on the silicon material by adopting cutting fluid #1, and measuring whether the outer diameter of the processed silicon material is qualified or not;
s4, punching key holes of the silicon material by adopting cutting fluid #2, then performing ultrasonic cleaning, and measuring the key holes of the silicon material;
s5, punching the silicon material by adopting a cutting fluid #2, ultrasonically cleaning the punched silicon material, and measuring a non-contact hole of the punched material;
s6, etching acid holes on the silicon material by using acid liquor, and checking whether broken scratches exist on the surface of the silicon material by appearance after etching;
s7, grinding the silicon material for the second time by adopting the cutting fluid #1, performing ultrasonic cleaning after grinding, and performing contact thickness measurement on the silicon material;
s8, grinding the silicon material for the third time by adopting the cutting fluid #1, performing ultrasonic cleaning after grinding, and performing contact thickness measurement on the silicon material;
s9, adopting cutting fluid #1 to process the outer section diameter of the silicon material, performing ultrasonic cleaning on the silicon material, and performing contact type outer section diameter measurement on the silicon material;
s10, after grinding the silicon material for the fourth time by adopting the cutting fluid #1, respectively adopting deionized water and a cleaning agent to carry out ultrasonic cleaning, and carrying out non-contact shape measurement on the silicon material;
s11, carrying out contact type integral measurement on the silicon material, putting the finished product into a packaging bag, injecting deionized water, sealing, packaging and leaving a warehouse;
the cutting fluid #1 is prepared by mixing deionized water and Hysol X cutting oil in a mass ratio of 1000:1-5;
the cutting fluid #2 is prepared by mixing deionized water and M COOL S-3900 cutting oil in a mass ratio of 1000:2-7;
the cutting fluid #3 is prepared by mixing deionized water, silicon carbide, nano lanthanum oxide and a dispersing agent in a mass ratio of 3-4:1:0.5-1:0.1-0.3;
the dispersing agent is prepared by mixing sodium polystyrene sulfonate and sophorolipid in a mass ratio of 3:1-4;
the acid liquor is prepared by the following method:
adding 2.4-3.6 parts by weight of acidic ionic liquid, 1-3 parts by weight of caffeic acid, 2-4 parts by weight of tetra sodium ethylenediamine tetraacetate, 10-20 parts by weight of m-chlorobenzoic acid, 1-3 parts by weight of poloxamer and 4-7 parts by weight of isopropanol into 100-200 parts by weight of deionized water, and performing ultrasonic dispersion for 10-30min to obtain acid liquor;
the acidic ionic liquid is prepared from a mixture of N-ethylpyridine bisulfate, triethylamine tetrafluoroborate and 1-hexyl-3-methylimidazole hexafluorophosphate in a mass ratio of 1-2:2-3:4;
the cleaning agent is TFD4.
2. The process according to claim 1, wherein the rough grinding in step S1 is performed by chemical mechanical grinding, the grinding pressure is 150-250kPa, the grinding temperature is 40-50 ℃, the grinding pad rotation speed is 22-28r/min, the grinding wheel rotation speed is 50-60r/min, and the flow rate of the cutting fluid #3 is controlled to be 9-11L/min.
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| CN1669739A (en) * | 2000-12-01 | 2005-09-21 | 东洋橡膠工业株式会社 | Polishing pad, method of manufacturing the polishing pad, and cushion layer for polishing pad |
| WO2005100623A2 (en) * | 2004-04-15 | 2005-10-27 | Corus Aluminium Nv | Free-machining wrough aluminium ally product and process for producing such an alloy product |
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