CN116801713A - Sandwich type artificial antiferroelectric film material and preparation method thereof - Google Patents
Sandwich type artificial antiferroelectric film material and preparation method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 claims description 23
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- 238000001755 magnetron sputter deposition Methods 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
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- 238000005516 engineering process Methods 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 16
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- 238000005477 sputtering target Methods 0.000 claims description 14
- 238000004321 preservation Methods 0.000 claims description 13
- 239000012298 atmosphere Substances 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
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- 239000010936 titanium Substances 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
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- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 8
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 claims description 8
- 239000013077 target material Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
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- 239000010931 gold Substances 0.000 claims description 7
- 229910052746 lanthanum Inorganic materials 0.000 claims description 7
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- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
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- IGPAMRAHTMKVDN-UHFFFAOYSA-N strontium dioxido(dioxo)manganese lanthanum(3+) Chemical compound [Sr+2].[La+3].[O-][Mn]([O-])(=O)=O IGPAMRAHTMKVDN-UHFFFAOYSA-N 0.000 claims description 6
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- 239000012528 membrane Substances 0.000 claims description 5
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- UYLYBEXRJGPQSH-UHFFFAOYSA-N sodium;oxido(dioxo)niobium Chemical compound [Na+].[O-][Nb](=O)=O UYLYBEXRJGPQSH-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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Abstract
The invention relates to a sandwich type artificial antiferroelectric film material and a preparation method thereof. The sandwich type artificial antiferroelectric film material comprises a substrate, a bottom electrode, a buffer layer, a sandwich type dielectric layer and a top electrode, wherein the substrate is a silicon single crystal substrate, the bottom electrode is an inert metal electrode, the buffer layer is perovskite type oxide, the sandwich type dielectric layer is a ferroelectric film, and the top electrode is a high-conductivity metal point electrode. The sandwich-type artificial antiferroelectric material provided by the invention has high breakdown electric field resistance (more than or equal to 2000 kV/cm) and excellent fatigue resistance (more than or equal to 10 bearing capacity) 9 The secondary polarization cycle period) and the crystallization temperature of the material system is lower (less than or equal to 500 ℃), thereby being beneficial to the integrated application of microelectronic devices. The invention can develop a new way for developing a novel antiferroelectric material system, and can greatly widen the research scope of the performance regulation of the antiferroelectric material.
Description
Technical Field
The invention relates to the technical field of antiferroelectric materials, in particular to a sandwich-type artificial antiferroelectric film material and a preparation method thereof.
Background
The information disclosed in the background of the invention is only for enhancement of understanding of the general background of the invention and is not necessarily to be taken as an admission or any form of suggestion that this information forms the prior art already known to a person of ordinary skill in the art.
The antiferroelectric body is used as an extremely important functional dielectric material, and has unique double-hysteresis loop and near-zero residual polarization characteristics due to a special unit cell structure, and can simultaneously show abundant antiferroelectric structure phase change, abrupt changes of physical parameters such as polarization intensity, unit cell volume, charge quantity, specific heat and the like under the excitation of an external field (electric field, temperature and stress), so that the conversion among mechanical energy, electric energy, heat energy and the like can be realized along with the remarkable changes of polarization intensity, deformation, current and temperature, and the antiferroelectric, dielectric, piezoelectric, pyroelectric and electric card and other multiple performances are realized. The multiple characteristics of the antiferroelectric material can lead the antiferroelectric material to be widely applied in a plurality of fields such as high-density energy storage capacitors, large-displacement actuators, energy converters, sensors, pyroelectric infrared detectors, solid-state electric card refrigeration and the like. Because these functional devices are mainly used in important fields such as medicine, electronic information, military and the like, great research interest is raised.
With lead zirconate (PbZrO) 3 ) Sodium niobate (NaNbO) 3 ) Silver niobate (AgNbO) 3 ) Bismuth sodium titanate ((Na) 0.5 Bi 0.5 )TiO 3 ) The system is typically representative of antiferroelectric materials, and is most representative in both academic research and industrial applications. These antiferroelectric materials, while having their unique advantages, also have some limitations that are themselves difficult to overcome: (1) Most antiferroelectric bodies rely on toxic elements (such as Pb) and some noble metal elements (such as Ag and Nb), which is not beneficial to mass production and application; (2) The cation at the A position is volatile, so that the impurity phase and defect are easy to generate, the leakage conduction loss is high, and the compressive strength is low; (3) The switching field is higher, the residual polarization and the electric hysteresis are larger, and the fatigue resistance and the circulation stability are poor; (4) The characteristics of the double-electric hysteresis loop of the leadless antiferroelectric material at room temperature are not obvious, and the defects seriously prevent the wide application of the leadless antiferroelectric material in the fields of energy storage, sensing, actuation, refrigeration and the like. Electronic, information andthe rapid development of science and technology such as control has more stringent requirements on material properties, and the traditional single antiferroelectric material can not meet the actual application demands.
Disclosure of Invention
The invention aims to solve a plurality of problems faced by the antiferroelectric materials based on lead zirconate, silver niobate, sodium niobate and sodium bismuth titanate, provides a simple method for preparing a sandwich antiferroelectric film material with low crystallization temperature, breakdown resistance and fatigue resistance by using normal ferroelectric design with a large number of types and low cost elements without any antiferroelectric material components, and provides a new way for developing a novel antiferroelectric material system, and the research scope of antiferroelectric materials is enriched and widened.
The invention is realized by adopting the following technical scheme:
in a first aspect, the present invention provides a low crystallization temperature, breakdown-resistant, fatigue-resistant "sandwich" type antiferroelectric film material, the "sandwich" type antiferroelectric film material comprising a substrate, a bottom electrode, a buffer layer, a "sandwich" dielectric layer, and a top electrode; wherein the substrate is a semiconductor silicon single crystal; the bottom electrode is an inert metal platinum thin layer; the buffer layer is perovskite oxide lanthanum nickelate or strontium ruthenate or lanthanum strontium manganate or lanthanum strontium cobaltate; in the sandwich dielectric layer, the upper and lower layers are barium titanate, and the middle layer is selected from one of bismuth ferrite, lead zirconate titanate and potassium sodium niobate; the top electrode is a high conductivity platinum or gold dot electrode.
The thicknesses of the bottom electrode layer and the buffer layer are respectively 100-600nm and 25-300nm; the diameter of the top electrode is 50 μm-1mm; the thickness of the sandwich dielectric layer is 60nm-3 mu m, wherein the thickness of the upper or lower layer film is 5nm-1.25 mu m, and the thickness of the middle layer film is 10nm-2.5 mu m; the crystallization temperature is not higher than 500 ℃.
Further, the bottom electrode is attached with a metal titanium layer, which can increase the adhesion between the substrate and the platinum electrode.
The low crystallization temperature, breakdown resistance and fatigue resistance sandwich type antiferroelectric film material is prepared by a radio frequency magnetron sputtering technology. First, a sputtering bottom electrode is deposited on a substrate, then a sputtering buffer layer and a sandwich dielectric layer are sequentially deposited on the bottom electrode, and finally a top electrode is deposited.
In a second aspect, the present invention provides a method for preparing the above sandwich-type antiferroelectric film material, specifically comprising the steps of:
(1) Taking semiconductor silicon as a matrix, taking inert metal platinum as a sputtering target material in an inert argon atmosphere, and depositing a platinum bottom electrode layer on the silicon matrix by utilizing a radio frequency magnetron sputtering technology;
(2) On the basis of the step (1), introducing oxygen to form a mixed gas atmosphere of argon and oxygen, taking perovskite oxide lanthanum nickelate or strontium ruthenate or lanthanum strontium manganate or lanthanum strontium cobaltate ceramic as a sputtering target, and depositing a sputtering buffer layer on the platinum electrode layer by utilizing a radio frequency magnetron sputtering technology;
(3) Taking barium titanate, bismuth ferrite, lead zirconate titanate and potassium sodium niobate oxide ceramics as sputtering targets, and sequentially sputtering and depositing a lower layer, a middle layer and an upper layer of a sandwich from bottom to top on the basis of a buffer layer by utilizing a radio frequency magnetron sputtering technology under the atmosphere of mixed gas of argon and oxygen;
(4) Carrying out heat preservation treatment on the sandwich membrane material obtained in the step (3), wherein the heat preservation atmosphere is oxygen; cooling to room temperature after heat preservation is completed;
(5) And (3) taking a gold or platinum sheet as a target material, and depositing a top electrode on the sandwich membrane material through a mask plate in a direct current sputtering mode.
Further, in the step (1), the substrate is heated to 200-500 ℃ under an inert argon atmosphere, wherein the gas flow of the inert atmosphere is 20-60sccm, and the gas pressure is 0.1-5Pa.
Further, in the step (1), the sputtering air pressure is 0.1-1Pa, the sputtering power is 30-80W, and the deposition time is controlled to be 10-30min.
In the step (1), before depositing the platinum bottom electrode layer, using metallic titanium as a sputtering target material, and utilizing a radio frequency magnetron sputtering technology to deposit a sputtering titanium layer on the silicon substrate, wherein the deposition time is 4-6min.
Further, in the step (2), the flow rate of argon gas is controlled to be 20-100sccm, the flow rate of oxygen gas is controlled to be 5-25sccm, the air pressure is controlled to be 0.1-3Pa, the sputtering power is controlled to be 60-150W, and the deposition time is controlled to be 10-30min.
In the step (3), a barium titanate sandwich lower layer, a bismuth ferrite or lead zirconate titanate or potassium sodium niobate sandwich middle layer and a barium titanate sandwich upper layer are sequentially sputtered and deposited on the basis of the buffer layer obtained in the step (2) from bottom to top by utilizing a radio frequency magnetron sputtering technology under the atmosphere of mixed gas of argon and oxygen, wherein the argon flow is controlled to be 20-100sccm, the oxygen flow is controlled to be 5-25sccm, the air pressure is controlled to be 1-3Pa, the sputtering power is 60-150W, and the deposition temperature is 200-500 ℃.
Further, in the step (4), during heat preservation, the oxygen flow is controlled to be 10-50sccm, the air pressure is controlled to be 0.5-10Pa, and the heat preservation time is 5-10 minutes; cooling to room temperature at a cooling rate of 3-10 ℃/min after the heat preservation is completed.
Further, in the step (5), the discharge current is 5-10mA, the deposition time is 3-8min, and the diameter of the top electrode is 50 μm-1mm.
In order to prepare the sandwich-type antiferroelectric film material with optimal performance, the total sputtering deposition time is kept unchanged, and the sandwich-type antiferroelectric film material with optimal performance is obtained by regulating the thickness proportion of each film layer of the sandwich.
The sandwich-type antiferroelectric film material has the characteristics of low crystallization temperature, breakdown resistance and fatigue resistance, and can show great application potential in the fields of microelectronic devices such as electric energy storage, polymorphic storage, sensing and the like.
The beneficial effects of the invention are as follows:
(1) The invention has no antiferroelectric material component, can realize antiferroelectric characteristics of the material by only utilizing normal ferroelectric through constructing a simple sandwich film layer structure, and powerfully expands the research scope of antiferroelectric materials.
(2) The construction method is simple, high in universality and high in controllability; and the material components are widely selected.
(3) The crystallization temperature of the material system in the method provided by the invention is lower (350-500 ℃), the volatilization of elements in the system can be effectively reduced, and the production of defects such as oxygen vacancies and the like can be avoidedThe obtained film material has excellent performance, breakdown-resistant electric field strength not lower than 2000kV/cm, and sustainable polarization cycle period not less than 10 9 Secondary times;
(4) The invention adopts the radio frequency magnetron sputtering technology, the prepared film material has good uniformity and compactness, the technological process and equipment operation are simple, the used raw materials are all sold in the market, the cost is low, the device integration is easy, and the invention is suitable for industrialized popularization and production.
The method according to the invention is described in further detail below with reference to the drawings and exemplary embodiments.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention.
FIG. 1 is a schematic diagram of the structure of a sandwich-type antiferroelectric film material system of the present invention; wherein, the substrate comprises a 1-substrate, a 2-bottom electrode, a 3-buffer layer, a 4-barium titanate layer, a bismuth ferrite 5 or lead zirconate titanate or potassium sodium niobate layer and a 6-top electrode.
Fig. 2 is a schematic diagram of a hysteresis loop of a sandwich-type antiferroelectric film material prepared according to the present invention, wherein the upper left-hand diagram is a flip-flop diagram of the film material and the lower right-hand diagram is a capacitive bias diagram of the film material.
Fig. 3 is a fatigue cycle diagram of a sandwich-type antiferroelectric film material prepared according to the present invention.
Fig. 4 is a cross-sectional scanning electron microscope image of a "sandwich" type antiferroelectric film prepared according to the present invention.
Detailed Description
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the invention. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
As shown in fig. 1, the sandwich-type antiferroelectric film material system of the present invention comprises a substrate 1, a bottom electrode 2, a buffer layer 3, a sandwich-type dielectric layer, and a top electrode 6; the substrate is a semiconductor silicon monocrystal, the bottom electrode is an inert metal platinum thin layer, the buffer layer is perovskite oxide lanthanum nickelate or strontium ruthenate or lanthanum strontium manganate or lanthanum strontium cobaltate, the sandwich dielectric layer comprises an upper barium titanate layer 4, a middle bismuth ferrite or lead zirconate titanate or potassium sodium niobate layer 5 and a lower barium titanate layer 4, and the top electrode is a high-conductivity platinum or gold dot electrode.
Further description will be given below by way of examples.
Example 1
A preparation method of breakdown-resistant and fatigue-resistant sandwich-type antiferroelectric film material comprises the following steps:
(1) Substrate treatment
Cleaning and installing a substrate: the method comprises the steps of using a semiconductor silicon single crystal as a matrix, carrying out ultrasonic cleaning by using absolute ethyl alcohol, washing by using deionized water, blow-drying by using high-purity nitrogen, putting the cleaned matrix into a sample holder, and putting the sample holder on a sample holder in a vacuum chamber of a magnetron sputtering instrument;
vacuumizing: closing a sputtering coating cavity of the magnetron sputtering instrument, and starting a mechanical pump and a molecular pump to vacuum until the air pressure of the cavity is 2 multiplied by 10 -4 Pa；
Heating and heating: before heating, introducing inert gas argon into the cavity, regulating the flow of the argon to 39sccm, regulating the pressure of the cavity to 2.5Pa by a regulating plate valve, and heating the substrate to 300 ℃ under the argon atmosphere.
(2) Preparation of bottom electrode layer
The method comprises the steps of taking metal titanium and platinum as sputtering targets, adjusting the air pressure of a chamber to be 0.3Pa, adjusting the sputtering power to be 55W, and sequentially depositing a platinum electrode layer attached with a titanium layer on a silicon substrate by using a radio frequency magnetron sputtering technology, wherein the deposition time is respectively controlled to be 5min and 15min, the titanium layer is an attached supporting layer, and the platinum is a bottom electrode layer.
(3) Preparation of buffer layer
Heating and heating: under the condition of the step (2), regulating the flow of argon gas to 39sccm, regulating a plate valve to enable the pressure of a cavity to be 2.5Pa, and heating the substrate with the deposited bottom electrode layer obtained in the step (2) to 500 ℃;
buffer layer deposition: the method comprises the steps of taking lanthanum nickelate oxide ceramic as a sputtering target, adjusting the flow of argon gas to 60sccm, introducing oxygen into a chamber, adjusting the flow to 15sccm, enabling the chamber to be in a uniform argon and oxygen mixed atmosphere, adjusting the air pressure of the chamber to 0.3Pa, setting the sputtering power to 100W, and performing sputtering deposition on a lanthanum nickelate buffer layer on a platinum bottom electrode layer by utilizing a radio frequency magnetron sputtering technology, wherein the deposition time is controlled to be 20min.
(4) Preparation of a "Sandwich" film
Preparing a barium titanate lower film layer: taking barium titanate oxide ceramic as a sputtering target, adjusting the air pressure of a chamber to 1.4Pa in the same sputtering gas atmosphere as in the step (3), setting the sputtering power to 100W, and sputtering and depositing a barium titanate film layer on a buffer layer by using a radio frequency magnetron sputtering technology, wherein the sputtering and depositing time is 15min;
preparing a bismuth ferrite layer intermediate film layer: taking bismuth ferrite oxide ceramic as a sputtering target material, and adopting the sputtering deposition process which is completely the same as that of the step (3) to sputter and deposit a bismuth ferrite intermediate layer on the barium titanate layer, wherein the sputtering deposition time is 30min;
preparing a barium titanate upper film layer: and (3) taking barium titanate oxide ceramic as a sputtering target material, and adopting the sputtering deposition process which is completely the same as that of the step (3) to sputter deposit a barium titanate upper film layer on the bismuth ferrite intermediate film layer, wherein the sputtering deposition time is 15min.
The thickness of the barium titanate lower film layer, the bismuth ferrite layer middle layer and the barium titanate upper film layer in the sandwich structure prepared by the method is 120nm, 240nm and 120nm respectively.
And (3) heat preservation and sampling: after the sputtering deposition of the sandwich film layer is finished, closing the flow of argon gas, adjusting the flow of oxygen gas to 39sccm, and adjusting the pressure of a chamber to 2.5Pa, so that the obtained sample is kept at 500 ℃ for 10min; and cooling to room temperature at a cooling rate of 5 ℃/min after the heat preservation is finished, and taking out the sample.
(5) Top electrode preparation
The gold thin sheet is used as a target, sputtering atmosphere is used as air, sputtering air pressure is regulated to 10Pa, target discharge current is regulated to 9mA, and a gold point electrode is sputtered and deposited on the surface of the prepared sandwich membrane material by using a direct current sputtering mode through a mask, wherein the diameter of the point electrode is 200 mu m.
Example 2
This embodiment differs from example 1 in that the substrate on which the bottom electrode layer is deposited is heated to 300 c or 350 c or 400 c or 450 c in step (3), and other steps and process parameters are the same as in example 1.
Example 3
The difference between this embodiment and example 1 is that the buffer layer deposition in step (3) uses strontium ruthenate or lanthanum strontium manganate or lanthanum strontium cobaltate oxide ceramic as the sputtering target, and other steps and process parameters are the same as those in example 1.
Example 4
The difference between this embodiment and example 1 is that the sputter deposition time of the buffer layer in step (3) is controlled to be 5min or 10min or 15min or 25min or 30min, and other steps and process parameters are the same as those of example 1.
Example 5
The difference between this embodiment and example 1 is that the sputtering deposition time of the barium titanate lower layer/bismuth ferrite middle layer/barium titanate upper layer in the "sandwich" film structure of step (4) is controlled to be 5/50/5min or 10/40/10min or 20/20/20min or 25/10/25min, respectively, and other steps and process parameters are the same as those of example 1.
Example 6
This embodiment differs from example 1 in that the temperature-maintaining and temperature-decreasing chamber pressure of the sample in step (4) is adjusted to 0.5Pa or 5.0Pa or 7.5Pa, and other steps and process parameters are the same as those of example 1.
Example 7
The difference between this embodiment and example 1 is that in step (5), a metal platinum sheet is used as a target for sputter deposition of the top electrode, and other steps and process parameters are the same as those in example 1.
Example 8
The difference between this embodiment and example 1 is that the diameter of the point electrode in step (5) is 100 μm or 300 μm or 500 μm, and other steps and process parameters are the same as those in example 1.
The sandwich-type antiferroelectric film materials obtained in examples 1-8 have excellent properties through performance tests. As shown in fig. 2, the "sandwich" type antiferroelectric film material prepared in example 1 exhibits an obvious double-hysteresis loop, and the inversion current curve and the capacitive bias loop have four obvious inversion peaks, and the breakdown-resistant electric field strength is higher than 2000kV/cm; the fatigue cycle test is shown in FIG. 3, when subjected to 10 compared with the initial state (without the polarization pulse cycle) 9 Almost no change in the ferroelectric hysteresis loop of the antiferroelectric film after the period of the secondary polarization pulse; the cross section of the prepared sandwich type antiferroelectric film material is shown in figure 4, and the thicknesses of the barium titanate lower film layer, the bismuth ferrite layer middle layer and the barium titanate upper film layer in the sandwich type structure are respectively 120nm, 240nm and 120nm.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The sandwich-type antiferroelectric film material is characterized by comprising a substrate, a bottom electrode, a buffer layer, a sandwich-type dielectric layer and a top electrode; the substrate is a semiconductor silicon monocrystal, the bottom electrode is an inert metal platinum thin layer, the buffer layer is perovskite oxide lanthanum nickelate or strontium ruthenate or lanthanum strontium manganate or lanthanum strontium cobaltate, the sandwich dielectric layer is a film of barium titanate, bismuth ferrite, lead zirconate titanate and potassium sodium niobate, and the top electrode is a platinum or gold dot electrode with high conductivity.
2. The "sandwich" type antiferroelectric film material of claim 1 wherein the bottom electrode layer and buffer layer have thicknesses of 100-600nm and 25-300nm, respectively; the diameter of the top electrode is 50 μm-1mm; the thickness of the sandwich dielectric layer is 60nm-3 mu m, wherein the thickness of the upper or lower layer film is 5nm-1.25 mu m, and the thickness of the middle layer film is 10nm-2.5 mu m;
or, the bottom electrode is attached with a metallic titanium layer.
3. The method of preparing a "sandwich" type antiferroelectric film material according to claim 1 or 2, comprising the steps of:
(1) Taking semiconductor silicon as a matrix, taking inert metal platinum as a sputtering target material in an inert argon atmosphere, and depositing a platinum bottom electrode layer on the silicon matrix by utilizing a radio frequency magnetron sputtering technology;
(2) On the basis of the step (1), introducing oxygen to form a mixed gas atmosphere of argon and oxygen, taking perovskite oxide lanthanum nickelate or strontium ruthenate or lanthanum strontium manganate or lanthanum strontium cobaltate ceramic as a sputtering target, and depositing a sputtering buffer layer on the platinum electrode layer by utilizing a radio frequency magnetron sputtering technology;
(3) Taking barium titanate, bismuth ferrite, lead zirconate titanate and potassium sodium niobate oxide ceramics as sputtering targets, and sequentially sputtering and depositing a lower layer, a middle layer and an upper layer of a sandwich from bottom to top on the basis of a buffer layer by utilizing a radio frequency magnetron sputtering technology under the atmosphere of mixed gas of argon and oxygen;
(4) Carrying out heat preservation treatment on the sandwich membrane material obtained in the step (3), wherein the heat preservation atmosphere is oxygen; cooling to room temperature after heat preservation is completed;
(5) And (3) taking a gold or platinum sheet as a target material, and depositing a top electrode on the sandwich membrane material through a mask plate in a direct current sputtering mode.
4. A method of preparing a sandwich-type antiferroelectric film according to claim 3, wherein in step (1), the substrate is heated to 200-500 ℃ under an inert argon atmosphere having a gas flow of 20-60sccm and a gas pressure of 0.1-5Pa.
5. The method for preparing a sandwich-type antiferroelectric film according to claim 3, wherein in the step (1), the sputtering pressure is 0.1-1Pa, the sputtering power is 30-80W, and the deposition time is controlled to be 10-30min;
in the step (1), before preparing the platinum electrode layer, metal titanium is used as a sputtering target material, and a radio frequency magnetron sputtering technology is utilized to deposit and sputter the attached metal titanium layer on the silicon substrate, wherein the deposition time is 4-6min.
6. The method of claim 3, wherein in the step (2), the flow rate of argon gas is controlled to be 20-100sccm, the flow rate of oxygen gas is controlled to be 5-25sccm, the air pressure is controlled to be 0.1-3Pa, the sputtering power is controlled to be 60-150W, and the deposition time is controlled to be 10-30min.
7. The preparation method of the sandwich-type antiferroelectric film material according to claim 3, wherein in the step (3), under the atmosphere of a mixed gas of argon and oxygen, a barium titanate sandwich lower layer, a bismuth ferrite or lead zirconate titanate or potassium sodium niobate sandwich middle layer and a barium titanate sandwich upper layer are sequentially sputtered and deposited on the basis of the buffer layer obtained in the step (2) from bottom to top by utilizing a radio frequency magnetron sputtering technology.
8. The method of claim 3, wherein in the step (3), the flow rate of argon is controlled to be 20-100sccm, the flow rate of oxygen is controlled to be 5-25sccm, the air pressure is controlled to be 1-3Pa, the sputtering power is 60-150W, and the deposition temperature is 200-500 ℃.
9. The method for preparing a sandwich-type antiferroelectric film material according to claim 3, wherein in the step (4), the oxygen flow is controlled to be 10-50sccm, the air pressure is controlled to be 0.5-10Pa, and the heat preservation time is 5-10 min; cooling to room temperature at a cooling rate of 3-10 ℃/min after the heat preservation is completed.
10. A method of preparing a sandwich-type antiferroelectric film according to claim 3, wherein in step (5), the discharge current is 5-10mA, the deposition time is 3-8min, and the top electrode diameter is 50 μm-1mm.
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