CN112151357B - Barium titanate-based super-paraelectric film and low-and-medium-temperature sputtering preparation method and application thereof - Google Patents

Barium titanate-based super-paraelectric film and low-and-medium-temperature sputtering preparation method and application thereof Download PDF

Info

Publication number
CN112151357B
CN112151357B CN202011015541.3A CN202011015541A CN112151357B CN 112151357 B CN112151357 B CN 112151357B CN 202011015541 A CN202011015541 A CN 202011015541A CN 112151357 B CN112151357 B CN 112151357B
Authority
CN
China
Prior art keywords
barium titanate
film
sputtering
super
buffer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011015541.3A
Other languages
Chinese (zh)
Other versions
CN112151357A (en
Inventor
欧阳俊
王坤
赵玉垚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OuYang Jun
Qilu University of Technology
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN202011015541.3A priority Critical patent/CN112151357B/en
Publication of CN112151357A publication Critical patent/CN112151357A/en
Application granted granted Critical
Publication of CN112151357B publication Critical patent/CN112151357B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

The invention discloses a barium titanate-based super-cis-electric film material, a method for integrally preparing the barium titanate-based super-cis-electric film on a silicon substrate at a medium and low temperature and application thereof. The method comprises the following steps: the method comprises the steps of carrying out magnetron sputtering on a buffer layer and a barium titanate-based film from bottom to top on the surface of a base body plated with platinum and titanium at room temperature (without heating) or 150 ℃, carrying out magnetron sputtering on a top electrode on the surface of the barium titanate-based film, wherein the buffer layer is made of a conductive oxide lanthanum nickelate with a perovskite structure and capable of being matched with barium titanate-based lattices, and the sputtering mode is a continuous sputtering mode of the lanthanum nickelate buffer layer and the barium titanate-based film. The invention can reduce the temperature for preparing the barium titanate-based film material to room temperature or 150 ℃, and the barium titanate-based film material has a well dispersed nano polar region, high energy storage density and energy storage efficiency and high energy storage characteristic which are not changed along with the increase of the thickness. In addition, the thickness of the super-cis-electric film layer is reduced, the capacitance density is increased, and the development requirement of the thin film transistor is met.

Description

Barium titanate-based super-paraelectric film and low-and-medium-temperature sputtering preparation method and application thereof
Technical Field
The invention relates to the technical field of electronic material development and thin film material preparation, in particular to a barium titanate-based super-paraelectric film and a medium-low temperature preparation method and application thereof.
Background
The information in this background section is only for enhancement of understanding of the general background of the invention and is not necessarily to be construed as an admission or any form of suggestion that this information forms the prior art that is already known to a person of ordinary skill in the art.
In recent years, with the rapid development of electronic devices such as capacitors, power tuning devices, pulse power systems, thin film transistors, and the like, there is a great demand for materials and devices with high capacitance density, high dielectric constant, high energy storage density, and high energy storage efficiency, and the materials and devices are one of the leading edges and hot spots of current scientific research.
Compared with other energy storage components such as a battery and a super capacitor, the dielectric film capacitor has the advantages of rapid charge and discharge, environmental friendliness, good heat resistance and fatigue resistance and longer service life. The dielectric super-paraelectric capacitor is a material with high dielectric constant and low charge-discharge loss at room temperature, the super-paraelectric film has a well-dispersed short-range ordered polarization region, and due to the special microstructure, compared with ferroelectric and paraelectric films, the super-paraelectric film removes an electric hysteresis loop while keeping high dielectric constant, so that the super-paraelectric capacitor has high energy storage density and high energy storage efficiency, and the dielectric constant of the super-paraelectric capacitor has good frequency and temperature stability. Meanwhile, due to the high dielectric constant and low dielectric loss, the silicon dioxide can be applied to the thin film transistor as a high dielectric constant dielectric layer instead of the traditional silicon dioxide, and the overall performance of the thin film transistor is improved. The excellent electrical properties determine that the super-paraelectric thin-film material has wide application prospects in the technical fields of capacitors, power tuning devices, pulse power systems, thin-film transistors and the like, and the possibility is provided for realizing integration, miniaturization and multiple functions of thin-film electronic devices.
The inventor finds that in the practical application of the dielectric capacitor, the problems of high preparation temperature, high energy storage density, high energy storage efficiency and the like cannot be achieved at the same time. High fabrication temperatures not only add additional thermal budget, process flow and cost expense, but also pose significant challenges to the compatibility of dielectric capacitors with CMOS-Si technology. In addition, the high temperature causes the crystal size (grain size) to become large, resulting in that the ferroelectric capacitor exhibits a nearly square hysteresis dielectric response ("ferroelectric hysteresis loop") under an external electric field, and the recoverable capacitance thereof has low energy density, poor charging and discharging efficiency, is difficult to be connected to the existing electric energy storage and conversion technology, and in severe cases, will cause device failure. In addition, with the development of integrated circuits, in the practical application of thin film transistors, the dielectric layer material thereof has the problems of high preparation temperature, low capacitance density and low dielectric constant, and the like, which seriously restrict the development of thin film transistors.
Disclosure of Invention
Aiming at the technical problems in the prior art, the invention provides a barium titanate-based superparaelectric film, a medium-low temperature preparation method and application thereof. In the preparation method of the super-cis-electric film, the film forming temperature is reduced to 150 ℃ or room temperature (without heating), any subsequent annealing process is not needed, and the super-cis-electric phase can be directly formed by cooling after preparation. The super-cis-electric film is highly compatible with CMOS-Si technology and large-scale integrated circuit technology, and the formed film material has high energy storage density and high energy storage efficiency, and the energy storage characteristic is not weakened along with the increase of the thickness. And the capacitance density is increased by reducing the thickness of the super-cis-electric film layer, so that the development requirement of the thin film transistor is met.
To solve the above technical problem, one or more of the following embodiments of the present invention provide the following technical solutions:
in a first aspect, the invention provides a medium-low temperature sputtering preparation method of a barium titanate-based super-cis-conducting film, which comprises the following steps:
and sputtering and depositing a lanthanum nickelate buffer layer and a barium titanate base film on the silicon substrate sputtered with the bottom electrode in sequence, wherein the deposition temperature is 25-150 ℃, and the preparation method is obtained.
In a second aspect, the present invention provides a barium titanate-based superparamagnetic film, which is prepared by the above preparation method.
In a third aspect, the invention provides an electrode, wherein a silicon substrate, a bottom electrode, a buffer layer, a barium titanate-based film and a top electrode are sequentially arranged from the silicon substrate to the top electrode, and the buffer layer is made of a perovskite-structured conductive oxide lanthanum nickelate, which is in lattice match with the barium titanate-based film.
In a fourth aspect, the invention provides an application of the barium titanate-based superparaelectric film in preparing capacitors, power tuning devices, pulse power systems, silicon integrated circuits and thin film transistor devices.
Compared with the prior art, one or more technical schemes of the invention have the following beneficial effects:
1. the barium titanate-based film prepared by the invention has a well-dispersed nano polar region, high maximum polarization strength, small residual polarization strength, large dielectric constant and small dielectric loss, so that the barium titanate-based film has the characteristics of low preparation temperature, high energy storage density and energy storage efficiency and high energy storage characteristic which is not changed along with the increase of the thickness. In addition, the thickness of the super-cis-electric film layer is reduced, the capacitance density is increased, and the development requirement of the thin film transistor is met.
2. In the preparation process, the sputtering deposition temperature of the film on the silicon substrate is as low as room temperature (no heating), which is beneficial to the application in the fields of integrated circuits and microelectronics; the low preparation temperature greatly simplifies the production process flow, reduces the thermal budget in the production process, saves a large amount of cost, and obtains a membrane material with excellent energy storage property, and the recoverable energy density of the membrane material reachesTo 100J/cm 3 The energy storage efficiency reaches 90%, and the capacitance density and the dielectric constant of the capacitor have good frequency stability.
3. In the preparation process, the sputtering deposition temperature of the film on the silicon substrate is as low as room temperature (no heating), which is beneficial to the application in the fields of integrated circuits and microelectronics; the low preparation temperature greatly simplifies the production process flow of the thin film transistor, reduces the cost, and obtains the film material with high capacitance density which reaches 2450nF/cm 2 。
4. The invention uses the conductive oxide lanthanum nickelate matched with the barium titanate-based material in lattice as the buffer layer, which is beneficial to improving the crystallinity of the barium titanate-based film under the condition of medium and low temperature and optimizing the electrical property of the barium titanate-based film.
5. The superparamagnetic ferroelectric barium titanate-based film material obtained by the invention is a low-cost commercial material, does not contain toxic elements, and is green and environment-friendly; the preparation process is simple, low in equipment cost, easy for device integration and suitable for industrial popularization and production.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are included to illustrate an exemplary embodiment of the invention and not to limit the invention.
FIG. 1 is a schematic view showing the structure of a barium titanate-based superparamagnetic film in example 1 of the present invention;
FIG. 2 is a high resolution TEM image of a barium strontium zirconate titanate (BSZT, 300 nm) super-paraelectric film and a diffraction pattern of selected areas thereof in example 1 of the present invention;
FIG. 3 is a single-sided hysteresis chart (polarization versus applied electric field) of a barium strontium zirconate titanate (TET) film (300 nm) in example 1 of the present invention;
FIG. 4 is a graph of capacitance density versus frequency for a barium strontium zirconate titanate superparaelectric film (. About.300 nm) in example 1 of the present invention;
FIG. 5 is a graph of capacitance density versus frequency for barium strontium zirconate titanate (10 nm) film in example 8 in accordance with the invention;
wherein, 1-basal body, 2-bottom electrode, 3-buffer layer, 4-barium titanate-based film and 5-top electrode.
Detailed Description
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the invention. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
In a first aspect, the invention provides a medium-low temperature sputtering preparation method of a barium titanate-based super-cis-electricity film, which comprises the following steps:
and sputtering and depositing a lanthanum nickelate buffer layer and a barium titanate base film on the silicon substrate sputtered with the bottom electrode in sequence, wherein the deposition temperature is 25-150 ℃, and the preparation method is obtained.
Earlier researches show that lanthanum nickelate can effectively reduce the crystallization temperature of a sputtered barium titanate-based film. When the sputtering temperature in the above step is 200 ℃ or above, the barium titanate-based film can form columnar nano-crystalline grains which are vertical to the film thickness, so that the barium titanate-based film is in a ferroelectric state, the bearable voltage (breakdown voltage) of the barium titanate-based film is reduced, the remanent polarization strength is increased, and the recoverable energy storage density and the energy storage efficiency are correspondingly lower. The invention reduces the sputtering temperature of barium titanate-based film and lanthanum nickelate buffer layer to below 150 deg.C, so that the barium titanate-based film has long nucleation and large dispersed nano-polar region (diameter is 2-3 nm), the macro ferroelectricity disappears, the material is converted into super-paraelectric phase, and the energy storage density, efficiency and stability are improved. And, by reducing the thickness of the super-cis-electricity film layer (to 10nm at the lowest), the super-cis-electricity film has better capacitance density and dielectric constant. The invention realizes the sputtering preparation of barium titanate-based super-cis-electric film at 150 ℃ and room temperature, and the prepared film has well dispersed nano-polar regions, meets the strict size interval of super-cis-electric and has excellent dielectric and energy storage properties.
According to the invention, the conductive oxide lanthanum nickelate with a perovskite structure matched with barium titanate base lattices is added as a buffer layer, and the crystallinity of the barium titanate base film at the sputtering temperature of 150 ℃ and at room temperature (without heating) can be enhanced, so that the super-cis electric barium titanate base film with a well-dispersed nano-polarity region is formed, and the super-cis electric barium titanate base film material prepared at room temperature has high energy storage density and energy storage efficiency and high energy storage property and is not changed along with the increase of thickness. And the capacitance density is increased by reducing the thickness of the super-cis-electric film layer, so that the development requirement of the thin film transistor is met.
In some embodiments, the barium titanate-based film is pure barium titanate, barium zirconate titanate, or barium strontium zirconate titanate.
In some embodiments, the atmosphere in magnetron sputtering of the barium titanate-based film is a mixed atmosphere of argon and oxygen.
In some embodiments, the pressure of the magnetron sputtering is 1.2 to 1.4Pa and the sputtering power is 96 to 100W when the barium titanate-based film is magnetron sputtered.
In some embodiments, the buffer layer is magnetron sputtered in a mixed atmosphere of argon and oxygen, the magnetron sputtering pressure is 0.3Pa, and the sputtering power is 100W.
In some embodiments, the bottom electrode is magnetron sputtered in an atmosphere of argon at a pressure of 0.3Pa and a sputtering power of 55W.
In a second aspect, the present invention provides a barium titanate-based superparamagnetic film, which is prepared by the above preparation method.
The barium titanate-based superparaelectric film material provided by the invention has a well-dispersed nano polar region, high maximum polarization strength, small residual polarization strength, large capacitance density, large dielectric constant and small dielectric loss, so that the barium titanate-based superparaelectric film material has the characteristics of low preparation temperature, high energy storage density, high energy storage efficiency and no change of energy storage characteristics along with the increase of thickness, and is beneficial to the improvement of the performances of electronic devices such as capacitors, power tuning devices, pulse power systems, thin film transistors and the like.
In some embodiments, the barium titanate-based superparamagnetic film has a thickness of 10 to 40nm. By reducing the thickness of the super-cis-electric film layer (to 10nm as minimum), the capacitance density reaches 738-2450nF/cm 2 。
In a third aspect, the invention provides an electrode, wherein a silicon substrate, a bottom electrode, a buffer layer, a barium titanate-based film and a top electrode are sequentially arranged from the silicon substrate to the top electrode, and the buffer layer is made of a perovskite-structured conductive oxide lanthanum nickelate, which is in lattice match with the barium titanate-based film.
In some embodiments, the silicon substrate is a semiconductor Si/SiO 2 A substrate.
In some embodiments, the bottom electrode is an inert metal with a metal mobility lower than hydrogen.
Further, the bottom electrode is a composite electrode of one or two of copper, gold, silver, platinum and titanium.
Furthermore, the bottom electrode is a composite electrode of a titanium layer and a platinum layer.
Further, the thickness of the bottom electrode is 150nm.
In some embodiments, the buffer layer has a thickness of 25-100nm.
In some embodiments, the barium titanate-based film has a thickness in the range of 10nm to 900nm.
In some embodiments, the top electrode is made of a noble metal.
Furthermore, the top electrode is made of gold, silver or platinum.
Furthermore, the top electrode is made of gold.
In a fourth aspect, the invention provides an application of the barium titanate-based superparaelectric film in preparing capacitors, power tuning devices, pulse power systems, silicon integrated circuits and thin film transistor devices.
Example 1
(a) Treatment of substrates
With semiconductor Si/SiO 2 Putting the substrate into a sample tray as a substrate, and finally putting the sample tray on a sample tray frame of a vacuum coating chamber;
vacuumizing: the vacuum is turned offVacuumizing the chamber to 2X 10 -4 Pa；
Heating: introducing Ar gas into the chamber, heating the substrate to 300 ℃, and keeping the temperature stable.
(b) Preparation of bottom electrode
Titanium and platinum metals are used as sputtering targets, and a bottom electrode is deposited in a radio frequency magnetron sputtering mode. The sputtering air pressure is adjusted to 0.3Pa, the sputtering power is 55W, and the sputtering rate is controlled to be within the range of Si/SiO 2 Titanium and platinum are sequentially deposited on the substrate, and the total thickness of the bottom electrode is about 150nm.
(c) Preparation of buffer layer
Taking oxide lanthanum nickelate ceramic as a sputtering target material, and plating platinum and titanium on Si/SiO in a radio frequency magnetron sputtering mode 2 A buffer layer is deposited on the substrate. The sputtering temperature is room temperature, and the sputtering atmosphere is Ar and O 2 Mixed atmosphere, ar gas flow is controlled to be 60sccm 2 The gas flow is controlled at 15sccm, the sputtering pressure is 0.3Pa, the sputtering power is 100W, and the thickness of the lanthanum nickelate layer is about 100nm.
(d) Preparation of barium strontium zirconate titanate film
The perovskite oxide barium strontium zirconate titanate ceramic is used as a sputtering target material, and a barium strontium zirconate titanate film is deposited in a radio frequency magnetron sputtering mode. The sputtering temperature is room temperature, and the sputtering atmosphere is Ar and O 2 Mixed atmosphere, ar gas flow is controlled to be 60sccm 2 The gas flow is controlled at 15sccm, the sputtering pressure is 1.4Pa, the sputtering power is 96-98W, and the thickness of the barium strontium zirconate titanate film layer is 300nm.
(e) Preparation of the Top electrode
And covering the mask plate on the super paraelectric barium strontium titanate dielectric film layer at room temperature, and depositing the top electrode by using a direct current sputtering mode by using a gold foil target as a sputtering target material. The sputtering atmosphere was air, the discharge current was 9mA, and the sputtering power was 80W. The diameter of the top electrode was 200. Mu.m.
The prepared electrode structure is shown in fig. 1 and sequentially comprises a substrate 1, a bottom electrode 2, a buffer layer 3, a barium strontium zirconate titanate film 4 and a top electrode 5 from bottom to top.
As shown in fig. 2, the high-resolution transmission electron microscope and selective diffraction results of the barium strontium zirconate titanate film prepared in this example show that the barium strontium zirconate titanate film prepared at room temperature has well-dispersed nano-polar regions, and satisfies the grain size region with strict superparaelectric property.
The single-sided hysteresis loop result of the barium strontium zirconate titanate film prepared in the example is shown in FIG. 3, which is a thin-long hysteresis loop, and the recoverable energy density reaches 100J/cm through the calculation of the energy storage density 3 And the energy storage efficiency reaches 90 percent. The capacitance density is shown in fig. 4, and both have good frequency stability.
Example 2
This example differs from example 1 in that: in the step (d), perovskite oxide barium titanate ceramic is used as a sputtering target material, the sputtering pressure is 1.2Pa, the sputtering power is 100W, the thickness of the barium titanate-based film is 350nm, and other steps and parameters are the same as those in the specific example 1.
Example 3
This example differs from example 1 in that: in the step (c), the sputtering temperature of the lanthanum nickelate buffer layer is 150 ℃; in the step (d), the sputtering temperature of the strontium barium zirconate titanate film is 150 ℃, and other steps and parameters are the same as those of the specific example 1.
Example 4
This example differs from example 1 in that: in the step (c), the sputtering temperature of the lanthanum nickelate buffer layer is 150 ℃; in the step (d), perovskite oxide barium titanate ceramic is used as a sputtering target material, the sputtering temperature of the barium titanate-based film is 150 ℃, the sputtering pressure is 1.2Pa, the sputtering power is 100W, the thickness of the barium titanate-based film is 350nm, and other steps and parameters are the same as those in the specific example 1.
Example 5
This example differs from example 1 in that: in the step (d), the thickness of the barium strontium zirconate titanate film was 900nm, and other steps and parameters were the same as those in embodiment 1.
Through electrical property tests, the barium titanate-based films prepared by various embodiments have thin and long ferroelectric hysteresis lines at the sputtering temperature of 150 ℃ and different thicknesses, the energy storage density and the energy storage efficiency of the barium titanate-based films are not greatly different from those of example 1, and the recoverable energy density is basically stable at 100J/cm 3 Efficiency of energy storageThe stability is basically about 90%. Both the capacitance density and the dielectric constant have good frequency stability. Other examples 2-5 performed similarly to example 1.
Example 6
This example differs from example 1 in that: in the step (d), the thickness of the barium strontium zirconate titanate film was 40nm, and other steps and parameters were the same as those in embodiment 1.
Example 7
This example differs from example 1 in that: in the step (d), the thickness of the barium strontium zirconate titanate film is 20nm, and other steps and parameters are the same as those of the specific example 1.
Example 8
This example differs from example 1 in that: in the step (d), the thickness of the barium strontium zirconate titanate film was 10nm, and other steps and parameters were the same as those in embodiment 1.
Through electrical property tests, the barium strontium titanate-based film prepared by the embodiment has larger capacitance density, and the capacitance density result is shown in figure 5, and the capacitance density reaches 2450nF/cm 2 。
Example 9
In the step (c), the thickness of the lanthanum nickelate buffer layer is 25nm; in the step (d), the thickness of the barium strontium zirconate titanate film is 10nm.
Through electrical property tests, the capacitance density of the barium strontium zirconate titanate film prepared by the embodiment reaches 2440nF/cm 2 。
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (4)

1. The application of barium titanate-based superparaelectric film in preparing silicon integrated circuit and thin film transistor device is characterized in that: the medium-low temperature sputtering preparation method of the barium titanate-based super-paramagnetic film comprises the following steps: sequentially sputtering and depositing a lanthanum nickelate buffer layer and a barium titanate-based film on a silicon substrate sputtered with a bottom electrode, wherein the deposition temperature is 25-150 ℃, and the preparation method is obtained; the thickness of the barium titanate-based super-cis-electric film is 10-40nm; the thickness of the lanthanum nickelate buffer layer is 25-100nm.
2. Use according to claim 1, characterized in that: when the barium titanate-based film is subjected to magnetron sputtering, the atmosphere is a mixed atmosphere of argon and oxygen.
3. Use according to claim 1, characterized in that: when the barium titanate-based film is subjected to magnetron sputtering, the pressure of magnetron sputtering is 1.2-1.4Pa, and the sputtering power is 96-100W.
4. Use according to claim 1, characterized in that: when the buffer layer is subjected to magnetron sputtering, the atmosphere is a mixed atmosphere of argon and oxygen, the pressure of magnetron sputtering is 0.3Pa, and the sputtering power is 100W;
or when the bottom electrode is sputtered by magnetron sputtering, the atmosphere is argon, the gas pressure is 0.3Pa, and the sputtering power is 55W.
CN202011015541.3A 2020-09-24 2020-09-24 Barium titanate-based super-paraelectric film and low-and-medium-temperature sputtering preparation method and application thereof Active CN112151357B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011015541.3A CN112151357B (en) 2020-09-24 2020-09-24 Barium titanate-based super-paraelectric film and low-and-medium-temperature sputtering preparation method and application thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011015541.3A CN112151357B (en) 2020-09-24 2020-09-24 Barium titanate-based super-paraelectric film and low-and-medium-temperature sputtering preparation method and application thereof

Publications (2)

Publication Number Publication Date
CN112151357A CN112151357A (en) 2020-12-29
CN112151357B true CN112151357B (en) 2023-03-21

Family

ID=73896547

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011015541.3A Active CN112151357B (en) 2020-09-24 2020-09-24 Barium titanate-based super-paraelectric film and low-and-medium-temperature sputtering preparation method and application thereof

Country Status (1)

Country Link
CN (1) CN112151357B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112921288B (en) * 2021-01-25 2023-04-07 齐鲁工业大学 Preparation of high-energy-storage-density BaTiO 3 Ferroelectric thin film method, product and application thereof
CN114438450A (en) * 2022-01-05 2022-05-06 上海交通大学 Perovskite thin film and low-temperature preparation method and device thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6255122B1 (en) * 1999-04-27 2001-07-03 International Business Machines Corporation Amorphous dielectric capacitors on silicon
US6348705B1 (en) * 1999-12-22 2002-02-19 Advanced Technology Materials, Inc. Low temperature process for high density thin film integrated capacitors and amorphously frustrated ferroelectric materials therefor
WO2002002842A2 (en) * 2000-06-29 2002-01-10 Applied Materials, Inc. Low temperature cvd bst deposition
GB0427900D0 (en) * 2004-12-21 2005-01-19 Koninkl Philips Electronics Nv Semiconductor device with high dielectric constant gate insulator and method of manufacture
CN104419895B (en) * 2013-09-09 2016-11-16 中国科学院上海硅酸盐研究所 The method that under low temperature, preparation has the ruthenic acid strontium thin film of height (001) preferred orientation
CN106601903A (en) * 2016-12-06 2017-04-26 山东大学苏州研究院 C axis height-oriented barium titanate film and in-situ preparation method of the same at medium and low temperature
KR101905143B1 (en) * 2017-05-11 2018-10-08 한국과학기술원 Nonferroelectric dielectric materials and method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
《Superparaelectric (Ba0.95,Sr0.05)(Zr0.2,Ti0.8)O3 Ultracapacitors》;Kun Wang,etc.;《Advanced Energy Materials》;20200831;第10卷(第37期);第2001778（1-8）页 *

Also Published As

Publication number Publication date
CN112151357A (en) 2020-12-29

Similar Documents

Publication Publication Date Title
Zhang et al. ALD preparation of high-k HfO 2 thin films with enhanced energy density and efficient electrostatic energy storage
CN112151357B (en) Barium titanate-based super-paraelectric film and low-and-medium-temperature sputtering preparation method and application thereof
JP2006523153A (en) Multilayer structure containing barium strontium titanate on metal foil
Shen et al. Enhanced energy-storage performance of an all-inorganic flexible bilayer-like antiferroelectric thin film via using electric field engineering
US11917919B2 (en) Electret
JP2016029708A (en) Thin-film dielectric and thin-film capacitor element
WO2021208276A1 (en) Bismuth ferrite film material, method for integrally preparing bismuth ferrite film on silicon substrate at low temperature, and application
Nguyen et al. High-performance energy storage and breakdown strength of low-temperature laser-deposited relaxor PLZT thin films on flexible Ti-foils
CN1755848A (en) Dielectric thin film, thin film capacitor element, and method for manufacturing thin film capacitor element
US9506153B2 (en) Integrated composite perovskite oxide heterostructure
CN106601903A (en) C axis height-oriented barium titanate film and in-situ preparation method of the same at medium and low temperature
Ye et al. Dielectric and electrocaloric responses of Ba (Zr 0.2 Ti 0.8) O 3 bulk ceramics and thick films with sintering aids
Wu et al. Temperature-and frequency-dependent dielectric response and energy-storage performance in high (100)-oriented Sc doped (Na 0.85 K 0.15) 0.5 Bi 0.5 TiO 3 films
JP2007234726A (en) Semiconductor device and its fabrication process
Yue et al. Enhanced energy storage density of Bi3. 25La0. 75Ti3O12 thin films by preferred orientation and interface engineering
CN105296946B (en) A kind of the bismuth niobate calcium thin film material system and preparation method height-oriented with a axles
CN113718330B (en) Low-dielectric-constant high-entropy film and preparation method thereof
CN116234419A (en) Preparation method of spin orbit moment device
CN110863184A (en) Wide-working-temperature lead-free epitaxial film and preparation method thereof
Lamichhane et al. Studies on energy storage properties of BFO/WO3 bilayer thin film capacitor
Yin et al. Improved energy storage performance in flexible (PbLa) ZrO 3 thin films via nanocrystalline engineering
Li et al. The effect of bottom electrode on structure and electrical properties of BaZr0. 15Ti0. 85O3 films on SrTiO3 substrates
Li et al. Preferred orientation and ferroelectric properties of lead zirconate titanate thin films
CN100431157C (en) Oxide ferroelectric memory cell and prepn process
CN117049597B (en) Preparation method of high-energy-ratio dielectric capacitor and dielectric capacitor

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20231113

Address after: 250353 University Road, Changqing District, Ji'nan, Shandong Province, No. 3501

Patentee after: OuYang Jun

Patentee after: Qilu University of Technology (Shandong Academy of Sciences)

Address before: 250353 University Road, Changqing District, Ji'nan, Shandong Province, No. 3501

Patentee before: OuYang Jun

TR01 Transfer of patent right