CN116799055A - Radio frequency semiconductor device and method of manufacturing the same - Google Patents

Radio frequency semiconductor device and method of manufacturing the same Download PDF

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Publication number
CN116799055A
CN116799055A CN202310984543.0A CN202310984543A CN116799055A CN 116799055 A CN116799055 A CN 116799055A CN 202310984543 A CN202310984543 A CN 202310984543A CN 116799055 A CN116799055 A CN 116799055A
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material layer
dielectric material
semiconductor device
layer
radio frequency
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黄安东
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Suzhou Huatai Electronics Co Ltd
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Suzhou Huatai Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

The application discloses a radio frequency semiconductor device and a manufacturing method thereof, and relates to the technical field of semiconductor devices. The radio frequency semiconductor device may include a layer of dielectric material, the material of the layer of dielectric material including at least one of aluminum nitride, silicon nitride, and silicon oxide; an epitaxial material layer disposed on one side of the dielectric material layer; an active layer disposed on a side of the epitaxial material layer remote from the dielectric material layer. According to the embodiment of the application, the thermal resistance characteristic of the radio frequency semiconductor device is improved.

Description

Radio frequency semiconductor device and method of manufacturing the same
Technical Field
The application belongs to the technical field of semiconductor devices, and particularly relates to a radio frequency semiconductor device and a manufacturing method thereof.
Background
The thermal resistance characteristics of the rf semiconductor device affect the junction temperature of the rf semiconductor device. The higher the junction temperature of the rf semiconductor device, the worse the rf characteristics such as output power, efficiency, linearity and gain of the rf semiconductor device, and the shorter the lifetime of the rf semiconductor device.
In order to improve the lifetime of the radio frequency semiconductor device, there is a need to continuously improve the thermal resistance characteristics of the semiconductor device. However, the related art has a problem of causing poor thermal resistance of the rf semiconductor device.
Disclosure of Invention
The embodiment of the application provides a radio frequency semiconductor device and a manufacturing method thereof, which are beneficial to reducing the thickness of a substrate in the radio frequency semiconductor device and further beneficial to improving the thermal resistance characteristic of the radio frequency semiconductor device.
In a first aspect, an embodiment of the present application provides a radio frequency semiconductor device, including:
a dielectric material layer, wherein the material of the dielectric material layer comprises at least one of aluminum nitride, silicon nitride and silicon oxide;
an epitaxial material layer disposed on one side of the dielectric material layer;
an active layer disposed on a side of the epitaxial material layer remote from the dielectric material layer.
In some optional embodiments of the first aspect, the thickness of the layer of dielectric material is greater than or equal to 100nm and less than or equal to 10um.
In some alternative embodiments of the first aspect, the active layer includes a source structure, a drain structure, and a gate structure disposed between and spaced apart from the source structure and the drain structure.
In some alternative embodiments of the first aspect, the radio frequency semiconductor device further comprises a metal layer disposed on a side of the dielectric material layer remote from the epitaxial material layer.
Based on the same inventive concept, in a second aspect, an embodiment of the present application provides a method for manufacturing a radio frequency semiconductor device, including:
providing a sapphire substrate;
forming an epitaxial material layer on one side of the sapphire substrate, and forming an active layer on one side of the epitaxial material layer away from the sapphire substrate;
forming a supporting material layer on one side of the active layer away from the sapphire substrate;
removing the sapphire substrate;
and forming a dielectric material layer on the side of the epitaxial material layer away from the active layer, and removing the supporting material layer, wherein the material of the dielectric material layer comprises at least one of aluminum nitride, silicon nitride and silicon oxide.
In some alternative embodiments of the second aspect, the material of the dielectric material layer includes aluminum nitride, and forming the dielectric material layer on a side of the epitaxial material layer remote from the active layer includes:
and growing aluminum nitride on the side of the epitaxial material layer far away from the active layer by using a physical vapor deposition method to form a dielectric material layer.
In some alternative embodiments of the second aspect, forming the dielectric material layer on a side of the epitaxial material layer remote from the active layer using a physical vapor deposition method includes:
and growing aluminum nitride on the side of the epitaxial material layer far away from the active layer by utilizing a magnetron sputtering method to form a dielectric material layer.
In some alternative embodiments of the second aspect, the material of the dielectric material layer includes silicon oxide and/or aluminum nitride, and forming the dielectric material layer on a side of the epitaxial material layer remote from the active layer includes:
silicon oxide and/or aluminum nitride is grown on the side of the epitaxial material layer away from the active layer by chemical vapor deposition to form a dielectric material layer.
In some alternative embodiments of the second aspect, the chemical vapor deposition process comprises a plasma enhanced chemical vapor deposition process.
In some optional embodiments of the second aspect, removing the sapphire substrate includes:
the sapphire substrate is removed using an excimer laser.
In some optional embodiments of the second aspect, after forming the dielectric material layer on a side of the epitaxial material layer remote from the active layer, before removing the support material layer, the method further comprises:
a metal layer is formed on a side of the dielectric material layer remote from the epitaxial material layer.
In some alternative embodiments of the second aspect, the material of the support material layer comprises one of a silicon wafer and a sapphire wafer.
The embodiment of the application provides a radio frequency semiconductor device and a manufacturing method thereof, wherein the radio frequency semiconductor device can comprise a dielectric material layer, an active layer and an epitaxial material layer arranged between the dielectric material layer and the active layer. The material of the dielectric material layer comprises at least one of aluminum nitride, silicon nitride and silicon oxide, and the aluminum nitride, the silicon nitride and the silicon oxide have better electric conductivity, so that the dielectric material layer has better electric conductivity, thereby being beneficial to improving the thermal resistance characteristic of the radio frequency semiconductor device.
Drawings
In order to more clearly illustrate the technical solution of the embodiments of the present application, the drawings that are needed to be used in the embodiments of the present application will be briefly described, and it is possible for a person skilled in the art to obtain other drawings according to these drawings without inventive effort.
Fig. 1 is a schematic structural diagram of a gallium nitride high electron mobility transistor in the related art;
fig. 2 is a schematic structural diagram of a radio frequency semiconductor device according to an embodiment of the present application;
fig. 3 is a schematic flow chart of a method for manufacturing a radio frequency semiconductor device according to an embodiment of the present application;
fig. 4 is a schematic cross-sectional structure of a sapphire substrate according to an embodiment of the present application;
fig. 5 is a schematic cross-sectional structure of an epitaxial material layer and an active layer according to an embodiment of the present application;
FIG. 6 is a schematic cross-sectional view of a layer of support material formed according to an embodiment of the present application;
FIG. 7 is a schematic cross-sectional view of a sapphire substrate removal process according to an embodiment of the present application;
fig. 8 is a schematic cross-sectional view of a dielectric material layer and a support material layer removed according to an embodiment of the present application.
Reference numerals illustrate:
a. a silicon carbide substrate material; t, a transition layer; b. a gallium nitride buffer layer; c. an aluminum gallium nitride barrier layer; e. a gallium nitride cap layer; s, source electrode; g. a gate; d drain electrode; f. a source field plate;
1. a layer of dielectric material;
2. an epitaxial material layer;
3. an active layer; 31. a gate structure; 32. a source electrode structure; 33. a drain structure;
4. a metal layer;
5. a sapphire substrate;
6. and supporting the material layer.
Detailed Description
Features and exemplary embodiments of various aspects of the present application will be described in detail below, and in order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be described in further detail below with reference to the accompanying drawings and the detailed embodiments. It should be understood that the particular embodiments described herein are meant to be illustrative of the application only and not limiting. It will be apparent to one skilled in the art that the present application may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the application by showing examples of the application.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other like elements in a process, method, article or apparatus that comprises the element.
It should be understood that the term "and/or" as used herein is merely one relationship describing the association of the associated objects, meaning that there may be three relationships, e.g., a and/or B, may represent: a exists alone, A and B exist together, and B exists alone. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship. Before describing the technical solution provided by the embodiments of the present application, in order to facilitate understanding of the embodiments of the present application, the present application firstly specifically describes the problems existing in the related art:
the inventor has found through a great deal of research that, in the related art, because large-size gallium nitride substrate materials are difficult to realize, the radio frequency semiconductor devices of gallium nitride such as gallium nitride high electron mobility transistors and the like are usually obtained in a heteroepitaxial mode at present. The structure of a related art GaN high electron mobility transistor is shown in fig. 1, and the GaN high electron mobility transistor may include a silicon carbide substrate material a, a transition layer (transition layers) t, a GaN buffer layer (GaN buffer) b, an aluminum gallium nitride (AlGaN) barrier layer c, a GaN cap layer e, a source s, a gate g, a drain d, a source field plate f, and the like.
The thermal resistance characteristics of the rf semiconductor device affect the junction temperature of the rf semiconductor device. The higher the junction temperature of the rf semiconductor device, the worse the rf characteristics such as output power, efficiency, linearity and gain of the rf semiconductor device, and the shorter the lifetime of the rf semiconductor device. In order to improve the lifetime of the rf semiconductor device, it is required to continuously improve the thermal resistance characteristics of the rf semiconductor device. The thermal resistance of the radio frequency semiconductor device is the heat dissipation capacity of the radio frequency semiconductor device.
The inventors have found through extensive research that the thermal resistance characteristics of the rf semiconductor device can be improved by employing a high thermal conductivity material and reducing the substrate thickness of the rf semiconductor device. In the related art, since silicon carbide (SiC) has strong thermal conductivity, gallium nitride (GaN) high electron mobility transistors (High Electron Mobility Transistors, HEMT) are generally fabricated on a silicon carbide substrate, which is typically several hundred micrometers thick. In order to improve the thermal resistance of the radio frequency semiconductor device, the silicon carbide substrate needs to be thinned, so that the thermal resistance of the radio frequency semiconductor device is reduced, and the service life of the device is prolonged. The substrate thinning process can generally only be thinned to 100um, and further thinning of the wafer may present a risk of chipping. Therefore, it is difficult to further reduce the thickness of the substrate by the substrate thinning technique. That is, there is still a problem in the related art that results in a radio frequency semiconductor device having poor thermal resistance.
Fig. 2 shows a schematic structural diagram of a radio frequency semiconductor device according to an embodiment of the present application.
As shown in fig. 2, the radio frequency semiconductor device provided in the embodiment of the present application may include:
a dielectric material layer 1, and a material of the dielectric material layer 1 may include at least one of aluminum nitride (AlN), silicon nitride (SiN), and silicon oxide (SiO 2);
an epitaxial material layer 2 provided on one side of the dielectric material layer 1;
an active layer 3 arranged on the side of the epitaxial material layer 2 remote from the dielectric material layer 1.
An rf semiconductor device may include a dielectric material layer, an active layer, and an epitaxial material layer disposed between the dielectric material layer and the active layer. The material of the dielectric material layer comprises at least one of aluminum nitride, silicon nitride and silicon oxide, and the aluminum nitride, the silicon nitride and the silicon oxide have better electric conductivity, so that the dielectric material layer has better electric conductivity, thereby being beneficial to improving the thermal resistance characteristic of the radio frequency semiconductor device.
The dielectric material layer in the embodiments of the present application may be understood as a substrate in a radio frequency semiconductor device.
As an example, the material of the dielectric material layer 1 may include aluminum nitride.
As another example, the material of the dielectric material layer 1 may include silicon oxide and aluminum nitride.
As yet another example, the material of the dielectric material layer 1 may include aluminum nitride, silicon nitride, and silicon oxide.
It can be understood that, in the case that the dielectric material layer 1 includes at least one of aluminum nitride, silicon nitride and silicon oxide, the aluminum nitride, silicon nitride and silicon oxide are all insulating materials, and have good dielectric constants, so that substrate leakage of the radio frequency semiconductor device can be avoided, and further loss of the substrate of the radio frequency semiconductor device can be reduced, thereby improving efficiency of the radio frequency semiconductor device.
In some alternative embodiments, the thickness of the dielectric material layer 1 may be greater than or equal to 100nm and less than or equal to 10um. Thus, by reducing the thickness of the substrate in the radio frequency semiconductor device, the thermal resistance characteristic of the radio frequency semiconductor device is improved.
The thickness of the dielectric material layer 1 may be a length of the dielectric material layer 1 in the first direction X. The first direction X may be a thickness direction of the radio frequency semiconductor device, for example.
The thickness of the dielectric material layer 1 may be set according to practical situations, and is not limited herein. For example, the thickness of the dielectric material layer 1 may be 100nm,500nm,10um, etc.
It will be appreciated that by controlling the growth conditions of the layer of dielectric material 1, the thickness of the substrate in the rf semiconductor device can be precisely controlled.
The epitaxial material layer 2 may be a gallium nitride epitaxial material layer, for example. The gallium nitride epitaxial material layer may comprise gallium nitride epitaxial material.
In some alternative embodiments, the active layer 3 may include a source structure 32, a drain structure 33, and a gate structure 31 disposed between the source structure 32 and the drain structure 33 and spaced apart from both the source structure 32 and the drain structure 33.
It is understood that the active layer 3 may further include a passivation layer (not shown), a field plate structure (not shown), an interconnection metal (not shown), and the like.
In some alternative embodiments, the rf semiconductor device may further comprise a metal layer 4 arranged on the side of the dielectric material layer 1 remote from the epitaxial material layer 2.
In other words, in an embodiment of the present application, the dielectric material layer 1 may be disposed between the metal layer 4 and the epitaxial material layer 2, and the epitaxial material layer 2 may be disposed between the active layer 3 and the dielectric material layer 1.
Based on the same inventive concept, the application also provides a method for manufacturing the radio frequency semiconductor device. The method of manufacturing the radio frequency semiconductor device will be described below.
As shown in fig. 3, the radio frequency semiconductor device manufacturing method may include S310 to S350. Referring to fig. 4 to 8 together, fig. 4 to 8 are schematic cross-sectional structures corresponding to a series of processes of the method for manufacturing a radio frequency semiconductor device according to the present application.
S310, providing a sapphire substrate.
As shown in fig. 4, the material of the sapphire substrate 5 may include sapphire whose main component is alumina (Al 2 O 3 ). The sapphire has low cost, and the sapphire substrate 5 is used as the substrate of the radio frequency semiconductor device, so that the cost of the radio frequency semiconductor device is reduced. The sapphire also has light transmittance, and thus, laser light can pass through the sapphire substrate 5.
And S320, forming an epitaxial material layer on one side of the sapphire substrate, and forming an active layer on one side of the epitaxial material layer away from the sapphire substrate.
The epitaxial material layer 2 may be a gallium nitride epitaxial material layer, for example. The gallium nitride epitaxial material layer may comprise gallium nitride epitaxial material.
As shown in fig. 5, forming the epitaxial material layer 2 on one side of the sapphire substrate 5 may include:
growth of gallium nitride epitaxial material is performed on one side of the sapphire substrate 5 to form the epitaxial material layer 2.
Illustratively, as also shown in fig. 5, forming the active layer 3 on the side of the epitaxial material layer 2 remote from the sapphire substrate 5 may include:
a top device process is prepared on the side of the epitaxial material layer 2 remote from the sapphire substrate 5 to form an active layer 3.
Alternatively, the active layer 3 may include a source structure 32, a drain structure 33, and a gate structure 31 disposed between the source structure 32 and the drain structure 33 and spaced apart from both the source structure 32 and the drain structure 33. Illustratively, the drain structure 33 may be a drain ohmic contact and the gate structure 31 may be a gate schottky contact.
It is understood that the active layer 3 may further include a passivation layer (not shown), a field plate structure (not shown), an interconnection metal (not shown), and the like.
And S330, forming a supporting material layer on one side of the active layer away from the sapphire substrate.
In some alternative embodiments, the material of the support material layer 6 may comprise one of a silicon wafer and a sapphire wafer.
As an example, the material of the support material layer 6 may comprise a silicon wafer.
As another example, the material of the support material layer 6 may comprise sapphire sheets.
Illustratively, as shown in fig. 6, forming the support material layer 6 on the side of the active layer 3 remote from the sapphire substrate 5 may include:
the side of the active layer 3 remote from the sapphire substrate 5 is subjected to a bonding process with one of a silicon wafer and a sapphire wafer to form a support material layer 6.
The bonding treatment can be a treatment of directly bonding two pieces of homogeneous or heterogeneous semiconductor materials with clean surfaces and flat atomic levels through surface cleaning and activation treatment under certain conditions, and bonding wafers into a whole through Van der Waals force, molecular force and even atomic force.
S340, removing the sapphire substrate.
In some alternative embodiments, removing the sapphire substrate may include:
the sapphire substrate is removed using an excimer laser.
In this embodiment, the sapphire substrate is removed by the excimer laser, so that only the epitaxial material at the interface between the epitaxial material layer 2 and the sapphire substrate 5 is damaged, which is advantageous in reducing the process damage of the epitaxial material layer 2.
Illustratively, a KrF Excimer Laser (er) with a wavelength of 248nm is used to emit Laser light to a side of the sapphire substrate 5 away from the epitaxial material layer 2, and the Laser light penetrates the sapphire substrate 5 and is focused into the epitaxial material layer 2, so that the material in the epitaxial material layer 2 is decomposed, and the sapphire substrate 5 is peeled from the epitaxial material layer 2, thereby advantageously reducing the thickness of the substrate in the rf semiconductor device, and thus advantageously improving the thermal resistance characteristics of the rf semiconductor device. The wavelength values of the above KrF excimer laser are only used for illustration and are not intended to limit the present application. The wavelength of the KrF excimer laser can be set according to practical situations.
And S350, forming a dielectric material layer on one side of the epitaxial material layer far away from the active layer, and removing the supporting material layer, wherein the material of the dielectric material layer comprises at least one of aluminum nitride, silicon nitride and silicon oxide.
As shown in fig. 8, in some alternative embodiments, the material of the dielectric material layer 1 may include aluminum nitride, and forming the dielectric material layer 1 on a side of the epitaxial material layer away from the active layer 3 may include:
aluminum nitride is grown on the side of the epitaxial material layer 2 remote from the active layer 3 using a physical vapor deposition method (Physical Vapor Deposition, PVD) to form the dielectric material layer 1.
In the present embodiment, the physical vapor deposition method is used to facilitate the high-speed growth of aluminum nitride on the side of the epitaxial material layer 2 away from the active layer 3.
Physical vapor deposition refers to a method of vaporizing a material source (solid or liquid) surface into gaseous atoms or molecules or partially ionizing the material source into ions by a physical method under vacuum conditions, and depositing a thin film having a specific function on a substrate surface by a low-pressure gas (or plasma) process.
As shown in fig. 8, in some alternative embodiments, the physical vapor deposition method may include a magnetron sputtering method: that is, aluminum nitride is grown on the side of the epitaxial material layer 2 remote from the active layer 3 using a magnetron sputtering method to form the dielectric material layer 1.
In this embodiment, the magnetron sputtering method is advantageous for realizing high-speed growth of aluminum nitride on the side of the epitaxial material layer 2 away from the active layer 3, and reducing damage to the epitaxial material layer 2.
As shown in fig. 8, in other alternative embodiments, the material of the dielectric material layer 1 includes silicon oxide and/or aluminum nitride, and forming the dielectric material layer 1 on the side of the epitaxial material layer 2 away from the active layer 3 includes:
silicon oxide and/or aluminum nitride is grown on the side of the epitaxial material layer 2 remote from the active layer 3 by chemical vapor deposition (Chemical Vapor Deposition, CVD) to form the dielectric material layer 1.
In some alternative embodiments, the chemical vapor deposition process may include a plasma enhanced chemical vapor deposition process (Plasma Enhanced Chemical Vapor Deposition, PECVD). That is, growing silicon oxide and/or aluminum nitride on the side of the epitaxial material layer 2 away from the active layer 3 by chemical vapor deposition to form the dielectric material layer 1 may include: silicon oxide and/or aluminum nitride is grown on the side of the epitaxial material layer 2 remote from the active layer 3 by plasma enhanced chemical vapor deposition to form the dielectric material layer 1.
In the present embodiment, the effect on the physical properties of the epitaxial material layer 2 can be reduced by growing silicon oxide and/or aluminum nitride by a vapor deposition method of plasma enhanced chemistry.
Plasma enhanced chemical vapor deposition refers to a method of performing epitaxy by exciting a gas during chemical vapor deposition to generate low-temperature plasma and enhance chemical activity of a reactant substance.
It will be appreciated that the thickness of the layer of dielectric material 1 may be determined by the growth conditions of silicon oxide and/or aluminum nitride. That is, by controlling the growth conditions of the dielectric material layer 1, the thickness of the substrate in the rf semiconductor device can be precisely controlled.
As an example, an electron-grade tetraethyl orthosilicate (TEOS) silicon oxide may be grown on the side of the epitaxial material layer 2 remote from the active layer 3 using a PECVD method.
As another example, silicon nitride may be grown on the side of the epitaxial material layer 2 remote from the active layer 3 using a PECVD method.
Illustratively, removing the layer of support material 6 may include:
the support material layer 6 and the active layer 3 are subjected to a debonding treatment to remove the support material layer 6.
The process of the debonding process is opposite to that of the upper Wen Jian bonding process and will not be described in detail herein.
In some alternative embodiments, after forming the dielectric material layer on the side of the epitaxial material layer remote from the active layer, the method may further include, before removing the support material layer:
a metal layer is formed on a side of the dielectric material layer remote from the epitaxial material layer.
Illustratively, as shown in fig. 2, forming the metal layer 4 on the side of the dielectric material layer 1 remote from the epitaxial material layer 2 may include:
metal is deposited on the side of the layer of dielectric material 1 remote from the layer of epitaxial material 2 to form a metal layer 4.
In some alternative embodiments, the thickness of the dielectric material layer 1 may be greater than or equal to 100nm and less than or equal to 10um.
The embodiment of the application provides a method for manufacturing a radio frequency semiconductor device, which can comprise a dielectric material layer, an active layer and an epitaxial material layer arranged between the dielectric material layer and the active layer. The material of the dielectric material layer comprises at least one of aluminum nitride, silicon nitride and silicon oxide, and the aluminum nitride, the silicon nitride and the silicon oxide have better electric conductivity, so that the dielectric material layer has better electric conductivity, thereby being beneficial to improving the thermal resistance characteristic of the radio frequency semiconductor device.
The method for manufacturing a radio frequency semiconductor device in the above embodiment, in which the respective structures and advantageous effects have been described in detail in the embodiment related to the radio frequency semiconductor device, will not be described in detail here.
In the foregoing, only the specific embodiments of the present application are described, and it will be clearly understood by those skilled in the art that, for convenience and brevity of description, the specific working processes of the systems, modules and units described above may refer to the corresponding processes in the foregoing method embodiments, which are not repeated herein. It should be understood that the scope of the present application is not limited thereto, and any equivalent modifications or substitutions can be easily made by those skilled in the art within the technical scope of the present application, and they should be included in the scope of the present application.

Claims (10)

1. A radio frequency semiconductor device, comprising:
a dielectric material layer, wherein the material of the dielectric material layer comprises at least one of aluminum nitride, silicon nitride and silicon oxide;
an epitaxial material layer disposed on one side of the dielectric material layer;
and the active layer is arranged on one side of the epitaxial material layer away from the dielectric material layer.
2. The radio frequency semiconductor device according to claim 1, wherein a thickness of the dielectric material layer is 100nm or more and 10um or less.
3. The rf semiconductor device of claim 1, wherein the active layer comprises a source structure, a drain structure, and a gate structure disposed between and spaced apart from the source structure and the drain structure.
4. The rf semiconductor device of claim 1, further comprising a metal layer disposed on a side of the dielectric material layer remote from the epitaxial material layer.
5. A method of manufacturing a radio frequency semiconductor device, comprising:
providing a sapphire substrate;
forming an epitaxial material layer on one side of the sapphire substrate, and forming an active layer on one side of the epitaxial material layer away from the sapphire substrate;
forming a support material layer on one side of the active layer away from the sapphire substrate;
removing the sapphire substrate;
and forming a dielectric material layer on one side of the epitaxial material layer far away from the active layer, and removing the supporting material layer, wherein the material of the dielectric material layer comprises at least one of aluminum nitride, silicon nitride and silicon oxide.
6. The method of claim 5, wherein the material of the dielectric material layer comprises aluminum nitride, and the forming the dielectric material layer on the side of the epitaxial material layer away from the active layer comprises:
and growing aluminum nitride on the side of the epitaxial material layer away from the active layer by using a physical vapor deposition method to form a dielectric material layer.
7. A method of manufacturing a radio frequency semiconductor device according to any of claims 5 to 6, wherein the material of the dielectric material layer comprises silicon oxide and/or aluminum nitride, and the forming of the dielectric material layer on the side of the epitaxial material layer remote from the active layer comprises:
and growing the silicon oxide and/or the aluminum nitride on the side of the epitaxial material layer away from the active layer by adopting a chemical vapor deposition method so as to form a dielectric material layer.
8. The method of manufacturing a radio frequency semiconductor device according to claim 5, wherein the removing the sapphire substrate comprises:
the sapphire substrate is removed using an excimer laser.
9. The method of claim 5, wherein after forming a dielectric material layer on a side of the epitaxial material layer remote from the active layer, the method further comprises, prior to removing the support material layer:
a metal layer is formed on a side of the dielectric material layer remote from the epitaxial material layer.
10. The method of manufacturing a radio frequency semiconductor device according to claim 5, wherein the material of the support material layer comprises one of a silicon wafer and a sapphire wafer.
CN202310984543.0A 2023-08-07 2023-08-07 Radio frequency semiconductor device and method of manufacturing the same Pending CN116799055A (en)

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