CN116798844B - Ion generating device and particle removing method - Google Patents
Ion generating device and particle removing method Download PDFInfo
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- CN116798844B CN116798844B CN202311093023.7A CN202311093023A CN116798844B CN 116798844 B CN116798844 B CN 116798844B CN 202311093023 A CN202311093023 A CN 202311093023A CN 116798844 B CN116798844 B CN 116798844B
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- 239000002245 particle Substances 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 132
- 230000007246 mechanism Effects 0.000 claims abstract description 52
- 230000000295 complement effect Effects 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims description 30
- 239000012495 reaction gas Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 18
- 230000000149 penetrating effect Effects 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000000376 reactant Substances 0.000 claims description 8
- 238000007667 floating Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims 5
- 238000010168 coupling process Methods 0.000 claims 5
- 238000005859 coupling reaction Methods 0.000 claims 5
- 239000000463 material Substances 0.000 abstract description 37
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000013459 approach Methods 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 description 101
- 238000010884 ion-beam technique Methods 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000000460 chlorine Substances 0.000 description 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 8
- 229910052801 chlorine Inorganic materials 0.000 description 8
- 238000013461 design Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- -1 argon ions Chemical class 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides an ion generating device and a particle removing method, the ion generating device includes: the body is internally provided with a containing cavity which is used for containing the substrate; the ion source is accommodated in the accommodating cavity and is arranged opposite to the substrate; the first grid mesh and the second grid mesh are connected with each other; a grid driving mechanism connected with and driving the first grid and the second grid to move in a first direction so that any one of the first grid and the second grid is hidden between the ion source and the substrate; an ion source driving mechanism connected to and driving the ion source to move in a second direction so as to make the ion source approach to or separate from the substrate; the pattern on the first grid is complementary to the pattern on the second grid; the particle removal method employs the ion generating device described above. The invention solves the problem of low precision of directional removal of materials in the semiconductor manufacturing process.
Description
Technical Field
The invention relates to the technical field of directional material removal, in particular to an ion generating device and a particle removal method.
Background
Currently, in semiconductor manufacturing processes, high precision removal of material in specific areas on a substrate is often required to obtain a desired pattern structure design. However, in the semiconductor industry at present, the existing conventional material removal means, including a photoetching machine, dry etching, wet etching and the like, still have the problems of insufficient accuracy of material removal operation and low removal efficiency.
Therefore, in the field of directional removal of materials, as well as in the fields related to nano-scale precision removal of materials, chip fabrication, MEMS, micro-nano processing, etc., there is a need for an apparatus and/or process that addresses the above-described problem of low precision of directional removal of materials.
Disclosure of Invention
The invention aims to provide an ion generating device and a particle removing method, which are used for solving the problem that the precision of directional removal of materials in the semiconductor manufacturing process is not high.
In order to achieve the above purpose, the present invention provides the following technical scheme:
an ion generating device for etching a substrate, the ion generating device having a first direction and a second direction perpendicular to each other, and comprising:
the body is internally provided with a containing cavity which is used for containing the substrate and is respectively communicated with a reaction gas source and an air extracting pump;
The ion source is accommodated in the accommodating cavity and is arranged opposite to the substrate;
the first grid mesh and the second grid mesh are connected with each other, and any one of the first grid mesh and the second grid mesh is hidden between the ion source and the substrate;
a grid driving mechanism connected to and driving the first and second grids to move in the first direction so that any one of the first and second grids is hidden between the ion source and the substrate;
an ion source driving mechanism connected to and driving the ion source to move in the second direction so as to make the ion source approach to or separate from the substrate;
wherein the pattern on the first grid is complementary to the pattern on the second grid.
In some embodiments of the present invention, a first through hole is formed on the body, the first through hole communicates the accommodating cavity with the outside of the body, and the normal direction of the first through hole is the same as the first direction;
the grid driving mechanism comprises:
the first movable piece penetrates through the first through hole, part of the first movable piece is positioned in the accommodating cavity, the other part of the first movable piece is positioned outside the body, and part of the first movable piece positioned in the accommodating cavity is fixedly connected with the first grid and the second grid;
The fixed part of the first driving piece is fixedly connected with the body, the movable part of the first driving piece is fixedly connected with the first movable piece, the fixed part and the movable part of the first driving piece are movably connected, and the first driving piece drives the first movable piece to move in the first direction so as to drive the first grid mesh and the second grid mesh to move in the first direction.
In some embodiments of the present invention, a second through hole is provided on the first movable member, and a normal line of the second through hole is the same as the first direction;
the grid driving mechanism further comprises:
the first fixing piece passes through the second through hole and is fixedly connected to the outside of the body and is fixedly connected with the fixing part of the first driving piece, and the first fixing piece is movably connected with the first movable piece.
In some embodiments of the invention, the first fixture comprises:
the first fixing plate is positioned outside the body and fixedly connected with the fixing part of the first driving piece;
the first fixing rod is fixedly connected between the first fixing plate and the body, and penetrates through the second through hole to be movably connected with the first movable piece;
the first movable member includes:
The first movable plate is fixedly connected with the movable part of the first driving piece, the first movable plate is provided with the second through hole, and the first fixed rod penetrates through the second through hole and is movably connected with the first movable plate;
the first movable rod is fixedly connected with the first movable plate and penetrates through the first through hole to be movably connected with the body.
In some embodiments of the present invention, the first fixed plate and the first movable plate each include two fixed plates and two movable plates respectively disposed on two sides of the body in the first direction;
the first fixed rod and the first movable rod comprise four, and two first fixed rods and first movable rods are respectively arranged on two sides of the body in the first direction.
In some embodiments of the present invention, the grid driving mechanism further includes a first bellows, the first bellows is sleeved on the outer periphery of the portion of the first movable rod located outside the body, and two ends of the first bellows respectively abut against the body and one surface of the first movable plate, which is close to the body.
In some embodiments of the present invention, a through hole is formed in the first fixing plate along the first direction;
The fixed part of the first driving piece penetrates through the through hole, and the movable part of the first driving piece extends away from the through hole and is fixedly connected with the first movable plate.
In some embodiments of the invention, the grid drive mechanism further comprises:
the connecting plate is provided with a first penetrating part and a second penetrating part, the first penetrating part and the second penetrating part are arranged along the first direction, the first penetrating part and the second penetrating part both penetrate through the connecting plate along the second direction, the first grid is accommodated in the first penetrating part, the second grid is accommodated in the second penetrating part, and the connecting plate is fixedly connected with the part, which is positioned in the accommodating cavity, of the first movable part.
In some embodiments of the present invention, a third through hole is provided on the body, and the third through hole communicates the accommodating cavity with the outside of the body along the second direction;
the ion source driving mechanism includes:
the second fixing piece is positioned outside the body and fixedly connected with the body;
the second movable piece is movably connected with the second fixed piece and the body, and is positioned on one side of the second fixed piece, which faces the body;
The fixed part of the second driving piece is fixedly connected with the second fixed piece, the movable part of the second driving piece is fixedly connected with the second movable piece, the fixed part and the movable part of the second driving piece are movably connected, the second driving piece drives the second movable piece to move in the second direction, and then the ion source is driven to be close to or far away from one of the first grid and the second grid in the third through hole along the second direction.
In some embodiments of the invention, the second fixture comprises:
the second fixing plate is fixedly connected with the fixing part of the second driving piece;
the second fixing rod is fixedly connected between the second fixing plate and the body;
the second movable member includes:
the second movable plate is provided with a fourth through hole, the normal direction of the fourth through hole is the same as the second direction, the second fixed rod penetrates through the fourth through hole Kong Jiner, the second fixed piece is movably connected with the second movable piece, and the second movable piece is fixedly connected with the movable part of the second driving piece;
one end of the second corrugated pipe is fixedly connected to one surface of the second movable plate, which faces the body, and the other end of the second corrugated pipe is fixedly connected to one surface of the body, which faces the second movable plate, and one end of the second corrugated pipe, which is connected with the body, surrounds the periphery of the third through hole;
The ion source is fixedly connected to one surface of the second movable plate, which faces the body, and is accommodated in the second corrugated pipe.
In some embodiments of the invention, the ion source driving mechanism further comprises:
the floating joint is connected between the movable part of the second driving piece and the second movable plate;
the linear bearing is fixedly connected with the second movable plate, is arranged in the fourth through hole and is sleeved on the periphery of the second fixed rod;
the protection shell is hollow and tubular, the longitudinal direction of the protection shell is the same as the second direction, one end of the protection shell is fixedly connected to one surface of the second movable plate, which faces the body, the other end of the protection shell extends into the accommodating cavity, the protection shell is accommodated in the second corrugated pipe, and the protection shell is arranged on the periphery of the ion source in a surrounding mode;
the tray is accommodated in the accommodating cavity and fixedly connected with the body, and the tray and the ion source are oppositely arranged in the second direction and are used for bearing the substrate.
In order to achieve the above purpose, the present invention also provides the following technical solutions:
a particle removal method employing the ion generating apparatus described above, comprising the steps of:
Step S1, providing a substrate, placing the substrate in the accommodating cavity, and aligning the substrate with the ion source;
step S2, firstly operating the ion source driving mechanism to enable the ion source to be far away from the substrate, and then operating the grid driving mechanism to enable the first grid to be covered between the ion source and the substrate;
s3, introducing reaction gas into the accommodating cavity so that the reaction gas reacts with the surface of the substrate to form a reaction layer;
step S4, operating the ion source driving mechanism to enable the ion source to be close to the substrate, starting the ion source, enabling the ion source to bombard the substrate through the first grid, enabling the reaction layer on the surface of the substrate, which is not covered by the first grid, to be peeled off the substrate, and operating the ion source driving mechanism again to enable the ion source to be far away from the substrate;
step S5, repeating the steps S3 and S4 until a gully pattern with a preset depth is etched on the surface of the substrate;
s6, operating the grid driving mechanism to enable the second grid to be covered between the ion source and the substrate, operating the ion source driving mechanism to enable the ion source to be close to the substrate, starting the ion source, enabling the ion source to bombard the substrate through the second grid, and enabling the reaction layer on the substrate to be completely stripped, so that the substrate with the preset pattern is obtained.
In some embodiments of the invention, the substrate is silicon, the reactant gas is chlorine, and the source of supply gas for the ion source is argon.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. the ion generating device provided by the invention can freely switch two grids with two complementary patterns, and can perform high-precision directional etching on a substrate material by matching with an ion source and a reaction gas; specifically, the first grid is firstly used for covering between the ion source and the substrate, repeatedly corroding and bombarding the area of the stripped substrate which is not covered by the first grid, after etching the etching pattern with enough depth, switching the second grid and covering the second grid between the ion source and the substrate, and because the pattern on the second grid is complementary with the pattern on the first grid, restarting the ion source to emit high-energy ion beams and passing through the second grid, at the moment, bombarding the residual corrosion reaction layer on the surface of the stripped substrate, and finally obtaining the etching pattern with high precision.
2. The particle removing method provided by the invention can be combined with the ion generating device to remove particles on the surface of the material with high precision, wherein the particles comprise atoms and molecules, and the particles depend on the substrate material, the material of the reaction gas and the supply gas source of the high-energy ion beam in practical application.
3. The ion generating device and the particle removing method provided by the invention can be applied to the fields related to nano-scale precise material removal, the fields related to directional material removal and having high aspect ratio, and the fields such as chip manufacturing, MEMS (micro-electromechanical systems) and micro-nano processing, and the device and the method provided by the invention show high-precision effects on directional material removal in the fields.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an ion generating device according to an embodiment of the present disclosure at a first viewing angle;
FIG. 2 is a schematic view of the ion generating device of FIG. 1 at a second viewing angle;
FIG. 3 is a cross-sectional view of the ion generating device of FIG. 2 taken along line A-A;
FIG. 4 is a schematic view of the grid driving mechanism in FIG. 1 at a third viewing angle;
FIG. 5 is a schematic view of the grid driving mechanism of FIG. 4 at a fourth viewing angle;
FIG. 6 is a cross-sectional view of the grid drive mechanism of FIG. 5 taken along line B-B;
fig. 7 is a cross-sectional view of the ion source drive mechanism of fig. 3;
FIG. 8 is a front view of the first grid of FIG. 3;
fig. 9 is a front view of the second grid of fig. 3.
The main reference numerals in the drawings of the present specification are explained as follows:
x-a first direction; y-a second direction;
1-a body; 10-a housing cavity; 11-a first through hole; 12-a third through hole;
a 2-ion source;
31-a first grid; 32-a second grid;
4-grid driving mechanism; 41-a first movable member; 410-a second through hole; 411-a first movable plate; 412-a first movable bar; 42-a first driving member; 43-first securing member; 431-a first fixing plate; 4310-through holes; 432-first fixation bar; 44-a first bellows; 45-connecting plates; 451-a first through portion; 452-a second penetration; 46-fixing blocks;
5-an ion source drive mechanism; 51-a second fixing member; 511-a second fixing plate; 512-a second fixing rod; 521-a second movable plate; 5210-fourth through holes; 522-a second bellows; 53-a second driver; 54-floating joint; 55-linear bearings; 56-a protective shell; 57-tray.
Detailed Description
The following description of the technical solutions of the embodiments of the present invention will be clear and complete, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present invention based on the embodiments of the present invention.
The present invention provides an ion generating device and a particle removing method, which are described in detail below. It should be noted that, the following description order of the embodiments is not to be taken as a limitation of the preferred order of the embodiments of the present invention; in the following embodiments, the descriptions of the embodiments are focused on, and for the part that is not described in detail in a certain embodiment, reference may be made to the related descriptions of other embodiments.
It is to be understood that in the description of the present invention, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated; thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
In the embodiment of the invention, "parallel" refers to a state in which an angle formed by a straight line and a straight line, a straight line and a plane, or a plane and a plane is-10 to 10 degrees, and "perpendicular" refers to a state in which an angle formed by a straight line and a straight line, a straight line and a plane, or a plane and a plane is 80 to 100 degrees, and distances are equal and refer to a state in which a tolerance range is-10 to 10%.
Example 1: in some embodiments, a method for removing particles is provided, specifically, a reaction gas is used to corrode a surface of a substrate material to be etched in a reaction chamber, so that a reaction layer is formed on the surface of the substrate material, then the gas in the reaction chamber is evacuated, and then the substrate material is bombarded by a high-energy ion beam, and since the energy of the high-energy ion beam is higher than the energy of particles in the reaction layer but is smaller than the energy of particles bound between particles in the substrate material, the high-energy ion beam with a specific energy interval can bombard the reaction layer to be stripped completely, so that a required gully and/or pattern is etched in a region of the substrate surface bombarded by the high-energy ion beam, thereby completing etching of the substrate material. It is worth to say that the reaction between the reactant gas and the substrate material is limited, i.e. the reactant gas can only react with the particles with a certain depth on the surface of the substrate material, then the reaction can be stopped, the particles of the substrate material located deeper remain in the original state and do not react with the reactant gas, so that when the reactant gas is introduced into the substrate material each time, a reaction layer which is easy to be bombarded and stripped by high-energy ion beams is formed in a certain depth on the surface of the substrate material, and therefore, the particle removing method provided by the invention has good self-limitation, and the method and effect for precisely controlling the removal of the particles of the material are realized by utilizing the self-limitation of the reaction corrosion and bombardment stripping mode. In addition, in the particle removing method provided by the invention, two grids with complementary patterns are also adopted for filtering and covering the high-energy ion beams emitted by the ion source, and the patterns formed on the projection planes of the high-energy ion beams obtained by filtering and covering the two grids are complementary; by way of example, the shape of the "overall pattern" formed after superposition of the orthographic pattern of the energetic ion beam formed by the a-grid filtration mask and the orthographic pattern of the energetic ion beam formed by the B-grid filtration mask is the same as or conforms to the shape of the substrate being etched. In the particle removing method provided by the invention, firstly, an A grid mesh is covered between an ion source and a substrate, then reaction gas is introduced and the reaction gas corrodes the surface of the substrate to form a reaction layer with a certain thickness on the surface of the substrate, then a preset gully and/or pattern is bombarded by utilizing a high-energy ion beam of the ion source, and the operation is repeated for a plurality of times, namely, the 'fresh' substrate particles which are etched in the previous step and are exposed on the surface of the substrate are further corroded by repeatedly introducing the corrosion gas, then the gas in the reaction chamber is exhausted again, and the gully pattern area with the formed pattern corresponding to the A grid mesh is bombarded continuously through the A grid mesh; when the etching depth of the gully pattern reaches a preset value, switching the B grid mesh with the complementary pattern, switching on the ion source again and enabling the high-energy ion beam to pass through the B grid mesh to bombard and strip the residual reaction layer on the surface of the substrate cleanly, and finally obtaining the finished substrate without the reaction layer and with only the etched gully pattern.
The term "particle" as used herein refers to an atom or a molecule in various embodiments, depending on the substrate material used in the embodiments and the type of the reaction gas. Illustratively, in some embodiments of the present invention, silicon is used as the substrate, while chlorine is used as the reactant gas, and argon is used as the source of the high energy ion beam; more specifically, the silicon source can be monocrystalline silicon or polycrystalline silicon, which depends on specific design requirements and can be adjusted according to the change of practical application scenes.
Example 2: in some embodiments of the present invention, referring to fig. 1 to 3, an ion generating apparatus for etching a substrate, the ion generating apparatus having a first direction X and a second direction Y perpendicular to each other, and comprising: the device comprises a body 1, wherein a containing cavity 10 is arranged in the body, the containing cavity 10 is used for containing the substrate, the containing cavity 10 is respectively communicated with a reaction gas source and an air pump, wherein the reaction gas source is used for supplying the reaction gas into the containing cavity 10 so as to form a reaction layer on the surface of the substrate to be bombarded and stripped by high-energy ion beams so as to form a gully pattern, and the air pump is used for pumping out the residual reaction gas positioned in the containing cavity 10 after the reaction gas corrodes the surface of the substrate and forms the reaction layer on the surface of the substrate so as to facilitate the next high-energy ion beam bombardment operation; an ion source 2 accommodated in the accommodating chamber 10 and disposed opposite to the substrate; the first grid 31 and the second grid 32 are connected with each other, and any one of them is hidden between the ion source 2 and the substrate; a grid driving mechanism 4 that connects and drives the first grid 31 and the second grid 32 to move in the first direction X so that any one of the first grid 31 and the second grid 32 is hidden between the ion source 2 and the substrate; an ion source driving mechanism 5 connected to and driving the ion source 2 to move in the second direction Y so as to bring the ion source 2 closer to or farther from the substrate; wherein the pattern on the first grid 31 is complementary to the pattern on the second grid 32. Specifically, the ion source 2 emits a high-energy ion beam, the high-energy ion beam irradiates directly the first grid 31 or the second grid 32 (depending on which grid is located between the ion source 2 and the substrate when the high-energy ion beam is emitted), the grid is designed with a set pattern, and only a part of the high-energy ion beam conforming to the preset design is allowed to pass through, so that the high-energy ion beam passing through the grid irradiates directly the substrate, and the reaction layer on the surface of the substrate is bombarded and stripped, thereby etching the area on the surface of the substrate, which corresponds to the pattern of the grid, into a corresponding pattern; after repeated cycling of the etching, a substrate surface with a certain etching depth is obtained, and at this time, the grid driving mechanism 4 is controlled so that another grid with a complementary pattern in the grids moves between the ion source 2 and the substrate, and at this time, the ion source 2 emits a high-energy particle beam again to bombard and strip the rest of the reaction layer on the substrate surface clean, and finally, the substrate with the whole surface no longer remaining the reaction layer and the required etching pattern is obtained. Obviously, the ion generating device described above can achieve efficient and high-precision removal of atoms on a substrate material in the manner described above. The ion generating device provided in embodiment 2 of the present invention can be applied to the particle removal method provided in embodiment 1.
In some embodiments of the present invention, referring to fig. 8 and 9, the pattern of the first grid 31 may be the grid pattern shown in fig. 8, and the pattern of the second grid 32 may be the grid pattern shown in fig. 9, and it is apparent that the pattern of the first grid 31 shown in fig. 8 and the pattern of the second grid 32 shown in fig. 9 have a complementary relationship. Of course, the patterns of the first grid 31 and the second grid 32 shown in fig. 8 and fig. 9 in the present disclosure are only examples of one of the embodiments of the present disclosure, and may be designed according to actual requirements; however, the patterns of the first and second screens 31 and 32 need to be complementary, regardless of the specific pattern of the screens.
In some embodiments of the present invention, referring to fig. 1, a first through hole 11 is provided on the body 1, the first through hole 11 communicates the accommodating cavity 10 with the outside of the body 1, and a normal direction of the first through hole 11 is the same as the first direction X; referring to fig. 4 to 6, the grid driving mechanism 4 includes: a first movable member 41 passing through the first through hole 11, wherein a part of the first movable member 41 is located in the accommodating cavity 10, another part of the first movable member 41 is located outside the body 1, and a part of the first movable member 41 located in the accommodating cavity 10 is fixedly connected with the first grid mesh 31 and the second grid mesh 32; the first driving member 42, the fixed portion of the first driving member 42 is fixedly connected with the body 1, the movable portion of the first driving member 42 is fixedly connected with the first movable member 41, the fixed portion and the movable portion of the first driving member 42 are movably connected, the first driving member 42 drives the first movable member 41 to move in the first direction X, and then drives the first grid mesh 31 and the second grid mesh 32 to move in the first direction X. Specifically, the first driving member 42 drives the first movable member 41 to move in the first direction X, thereby moving the first and second grids 31 and 32 in the first direction X, and thus switching between the two grids having complementary patterns is achieved.
In some embodiments of the present invention, referring to fig. 1 and fig. 4, the first movable member 41 is provided with a second through hole 410, and a normal line of the second through hole 410 is the same as the first direction X; referring to fig. 4 to 6, the grid driving mechanism 4 further includes: the first fixing member 43 passes through the second through hole 410 and is fixedly connected to the outside of the body 1, and is fixedly connected to the fixing portion of the first driving member 42, and the first fixing member 43 is movably connected to the first movable member 41. Specifically, the first fixing member 43 serves to fix and place the first driving member 42, and provides an attached fulcrum for the first driving member 42 so that the first driving member 42 can drive the first movable member 41 to move.
In some embodiments of the present invention, referring to fig. 1 to 6, the first fixing member 43 includes: a first fixing plate 431, which is located outside the main body 1 and fixedly connected with the fixing portion of the first driving member 42; a first fixing rod 432 fixedly connected between the first fixing plate 431 and the body 1 and passing through the second through hole 410 to be movably connected with the first movable member 41; the first movable member 41 includes: the first movable plate 411 is fixedly connected with the movable part of the first driving member 42, the first movable plate 411 is provided with the second through hole 410, and the first fixed rod 432 passes through the second through hole 410 and is movably connected with the first movable plate 411; the first movable rod 412 is fixedly connected with the first movable plate 411, and the first movable rod 412 passes through the first through hole 11 to be movably connected with the body 1. Obviously, the connecting mode of each part has the characteristics of high efficiency and reliability; it is understood that the specific shape and the length parameters of each component can be selected and adjusted according to the actual application scenario.
In some embodiments of the present invention, referring to fig. 1 to 6, the first fixed plate 431 and the first movable plate 411 each include two fixed plates respectively disposed on two sides of the body 1 in the first direction X; the first fixed rod 432 and the first movable rod 412 each include four, and two first fixed rods 432 and first movable rods 412 are respectively disposed on two sides of the body 1 in the first direction X. It can be appreciated that the symmetrical design described above, the first fixing member 43 and the first movable member 41 are respectively disposed at two ends of the body 1 along the first direction X, so as to improve the structural stability of the whole grid driving mechanism 4 and the reliability of the sports service process.
In some embodiments of the present invention, referring to fig. 1, 2 and 4 to 6, the grid driving mechanism 4 further includes a first bellows 44, the first bellows 44 is sleeved on the outer periphery of the portion of the first movable rod 412 located outside the body 1, and two ends of the first bellows 44 respectively abut against one surface of the body 1 and one surface of the first movable plate 411, which is close to the body 1. It will be appreciated that the first bellows 44 has good deformability and sealing effect, and can ensure the operational reliability of the whole device and the stability of the environment in the accommodating cavity 10, thereby improving the etching accuracy.
In some embodiments of the present invention, referring to fig. 1 and 4, a through hole 4310 is formed in the first fixing plate 431 along the first direction X; the fixed portion of the first driving member 42 passes through the through hole 4310, and the movable portion of the first driving member 42 extends away from the through hole 4310 and is fixedly connected with the first movable plate 411. In other embodiments, the fixed portion of the first driving member 42 may be located on the side of the first fixing plate 431 facing away from the body 1, and the movable portion of the first driving member 42 moves back and forth through the hole 4310.
It will be appreciated that in some embodiments of the present invention, the first driving member 42 may be a cylinder, and the specific specification and parameters of the cylinder may be selected and adjusted according to the actual application scenario.
In some embodiments of the present invention, referring to fig. 4 and 5, the grid driving mechanism 4 further includes: the connecting plate 45 is provided with a first penetrating part 451 and a second penetrating part 452, the first penetrating part 451 and the second penetrating part 452 are arranged along the first direction X, the first penetrating part 451 and the second penetrating part 452 both penetrate through the connecting plate 45 along the second direction Y, the first grid 31 is accommodated in the first penetrating part 451, the second grid 32 is accommodated in the second penetrating part 452, and the connecting plate 45 is fixedly connected with a part of the first movable member 41 located in the accommodating cavity 10.
Referring to fig. 7, in some embodiments of the present invention, a third through hole 12 is provided on the body 1, and the third through hole 12 communicates the accommodating cavity 10 with the outside of the body 1 along the second direction Y; the ion source driving mechanism 5 includes: the second fixing piece 51 is located outside the body 1 and fixedly connected with the body 1; a second movable member (not numbered) movably connected with the second fixed member 51 and the body 1, wherein the second movable member is located on one side of the second fixed member 51 facing the body 1; the second driving member 53, the fixed portion of the second driving member 53 is fixedly connected with the second fixing member 51, the movable portion of the second driving member 53 is fixedly connected with the second movable member, the fixed portion and the movable portion of the second driving member 53 are movably connected, the second driving member 53 drives the second movable member to move in the second direction Y, and then drives the ion source 2 to approach or separate from the substrate in the third through hole 12 along the second direction Y. Specifically, through the above-mentioned component connection design scheme, the second driving member 53 is utilized to drive the second movable member to move in the second direction Y, so as to achieve that the ion source 2 approaches or is far away from the substrate in the second direction Y; it should be noted that in some embodiments of the present invention, the ion source 2 is only brought close to the substrate when the substrate is to be bombarded with a high-energy ion beam, and the ion source 2 may be brought away from the substrate during the process of introducing the reaction gas, or the ion source 2 may be brought away from the substrate when the switching grid is moved.
In some embodiments of the present invention, the second driving member 53 is a cylinder, and the specific specification and parameters of the cylinder can be selected and adjusted according to the practical application.
In some embodiments of the present invention, referring to fig. 7, the second fixing member 51 includes: a second fixing plate 511 fixedly connected to a fixing portion of the second driving member 53; a second fixing rod 512 fixedly connected between the second fixing plate 511 and the body 1; the second movable member includes: the second movable plate 521 is provided with a fourth through hole 5210, the normal direction of the fourth through hole 5210 is the same as the second direction Y, the second fixing rod 512 passes through the fourth through hole 5210 and the second fixing member 51 is movably connected with the second movable member, and the second movable member is fixedly connected with the movable portion of the second driving member 53; one end of the second bellows 522 is fixedly connected to one surface of the second movable plate 521 facing the body 1, the other end of the second bellows 522 is fixedly connected to one surface of the body 1 facing the second movable plate 521, and one end of the second bellows 522 connected to the body 1 surrounds the periphery of the third through hole 12; the ion source 2 is fixedly connected to a surface of the second movable plate 521 facing the main body 1, and the ion source 2 is accommodated in the second bellows 522. Specifically, through the above-mentioned component connection scheme, the second driving member 53 is utilized to drive the second movable plate 521, and further drive the ion source 2 connected to the second movable plate 521, so as to realize control of the movement of the ion source 2 in the second direction Y, so that the ion source 2 can be close to the substrate or far from the substrate as required.
It will be appreciated that the second bellows 522 has good repeated deformability, and can protect the components housed therein, and also prevent impurities outside the body 1 from being mixed into the housing chamber 10, thereby improving the removal accuracy of the substrate material particles.
In some embodiments of the present invention, referring to fig. 7, the ion source driving mechanism 5 further includes: a floating joint 54 connected between the movable portion of the second driving member 53 and the second movable plate 521; a linear bearing 55 fixedly connected to the second movable plate 521, disposed in the fourth through hole 5210, and sleeved on the outer periphery of the second fixed rod 512; a protective case 56 having a hollow tubular shape, wherein a longitudinal direction of the protective case 56 is the same as the second direction Y, one end of the protective case 56 is fixedly connected to a surface of the second movable plate 521 facing the body 1, the other end extends into the accommodating cavity 10, the protective case 56 is accommodated in the second bellows 522, and the protective case 56 is enclosed on an outer periphery of the ion source 2; a tray 57 accommodated in the accommodating chamber 10 and fixedly connected to the body 1, wherein the tray 57 is disposed opposite to the ion source 2 in the second direction Y, and is used for carrying the substrate.
Example 3: in some embodiments of the present invention, referring to fig. 1 to 6, a particle removal method, employing an ion generating apparatus as described in embodiment 2, comprises the steps of: step S1, providing a substrate, placing the substrate in the accommodating cavity 10, and aligning the substrate with the ion source 2; step S2-first operating the ion source driving mechanism 5 to distance the ion source 2 from the substrate, and then operating the grid driving mechanism 4 to mask the first grid 31 between the ion source 2 and the substrate; step S3, introducing a reaction gas into the accommodating cavity 10 so that the reaction gas reacts with the surface of the substrate to form a reaction layer; step S4-operating the ion source driving mechanism 5 to bring the ion source 2 close to the substrate, activating the ion source 2, and causing the ion source 2 to bombard the substrate through the first grid 31, so that a portion of the reaction layer on the surface of the substrate, which is not hidden by the first grid 31, is peeled off the substrate, and operating the ion source driving mechanism 5 again so that the ion source 2 is away from the substrate; step S5, repeating the steps S3 and S4 until a gully pattern with a preset depth is etched on the surface of the substrate; step S6-operating the grid driving mechanism 4 so that the second grid 32 is hidden between the ion source 2 and the substrate, operating the ion source driving mechanism 5 so that the ion source 2 is close to the substrate, starting the ion source 2, and enabling the ion source 2 to bombard the substrate through the second grid 32 so that the reaction layer on the substrate is completely stripped, thereby obtaining the substrate with the preset pattern.
In some embodiments of the invention, the substrate is silicon, the reactant gas is chlorine, and the source of supply gas for the ion source is argon. Specifically, taking etching of a silicon substrate as an example, the bond energy between silicon and silicon is 3.4ev, and the bond energy between chlorine and silicon is 4.2ev. After chlorine is combined with silicon, the bond energy between the silicon combined with chlorine and the silicon on the lower layer is weakened to be 2.3ev, so that when the energy of the argon particle beam bombarded on the surface is between 2.3ev and 3.4ev, the silicon chloride can be bombarded, the silicon on the lower layer can not be bombarded, and the self-saturation and self-termination atomic layer etching is realized; the ion source emits argon ions.
In some embodiments of the present invention, first, chlorine gas (Cl 2) or chlorine plasma is introduced into the etching chamber, and the chlorine gas molecules are adsorbed (or absorbed) on the surface of the silicon material to form a chlorinated layer. This modification step is "self-limiting": once the surface is saturated, the reaction is stopped immediately; then, removing excessive chlorine in the etching cavity, and introducing argon ions (Ar+); argon ions pass through a grid mesh with a certain geometric pattern, bombard a corresponding region of the silicon wafer according to a preset track, physically remove a chlorinated layer generated after the silicon-chlorine reaction, and further leave the surface of the lower layer unmodified silicon. This removal process is still self-limiting, as it will also terminate once the chlorinated layer has been completely removed. After the two steps are completed, a layer of extremely thin material can be precisely removed from the silicon wafer. And setting corresponding cycle numbers according to the thickness of the film which is expected to be removed, and realizing the material removal of the specific area of the substrate. After the material is removed, switching the grid mesh complementary to the designed pattern, and performing ion bombardment on the initial modification layer to restore the original appearance of the local substrate.
In some embodiments of the present invention, the ion source 2 is a rf ion source, and specific setting parameters of the rf ion source can be set and adjusted according to practical application scenarios.
The ion generating device and the particle removing method provided by the invention can be applied to the fields related to nano-scale precise material removal, the fields related to directional material removal and having high depth-to-width ratio, the fields of chip manufacture, MEMS (micro-electromechanical systems), micro-nano processing and the like, and the device and the method provided by the invention show high precision effects on directional material removal in the fields, so that the problem of low precision on directional material removal in the semiconductor manufacturing process is solved.
The foregoing is merely illustrative embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think about variations or substitutions within the technical scope of the present invention, and the invention should be covered. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims. Furthermore, the foregoing description of the principles and embodiments of the invention has been provided for the purpose of illustrating the principles and embodiments of the invention and for the purpose of providing a further understanding of the principles and embodiments of the invention, and is not to be construed as limiting the invention.
Claims (13)
1. An ion generating device for etching a substrate, characterized in that the ion generating device has a first direction (X) and a second direction (Y) perpendicular to each other, and comprises:
the substrate processing device comprises a body (1), wherein a containing cavity (10) is arranged in the body, the containing cavity (10) is used for containing the substrate, and the containing cavity (10) is respectively communicated with a reaction gas source and an air extracting pump;
an ion source (2) accommodated in the accommodating cavity (10) and arranged opposite to the substrate;
a first grid (31) and a second grid (32) connected to each other, and either one of which is hidden between the ion source (2) and the substrate;
a grid driving mechanism (4) which connects and drives the first grid (31) and the second grid (32) to move in the first direction (X) so that any one of the first grid (31) and the second grid (32) is hidden between the ion source (2) and the substrate;
an ion source drive mechanism (5) connected to and driving the ion source (2) to move in the second direction (Y) to bring the ion source (2) closer to or farther from the substrate;
wherein the pattern on the first grid (31) is complementary to the pattern on the second grid (32).
2. The ion generating device according to claim 1, wherein a first through hole (11) is provided on the body (1), the first through hole (11) communicates with the housing chamber (10) and the outside of the body (1), and a normal direction of the first through hole (11) is the same as the first direction (X);
the grid driving mechanism (4) comprises:
the first movable piece (41) penetrates through the first through hole (11), part of the first movable piece (41) is positioned in the accommodating cavity (10), the other part of the first movable piece (41) is positioned outside the body (1), and part of the first movable piece (41) positioned in the accommodating cavity (10) is fixedly connected with the first grid mesh (31) and the second grid mesh (32);
the first driving piece (42), the fixed part of first driving piece (42) with body (1) rigid coupling, the movable part of first driving piece (42) with first movable part (41) rigid coupling, the fixed part and the movable part swing joint of first driving piece (42), first driving piece (42) drive first movable part (41) are in first direction (X) is gone up to move, and then drive first grid (31) and second grid (32) are in first direction (X) is gone up to move.
3. The ion generating apparatus according to claim 2, wherein a second through hole (410) is provided in the first movable member (41), and a normal line of the second through hole (410) is the same as the first direction (X);
the grid driving mechanism (4) further comprises:
the first fixing piece (43) passes through the second through hole (410) and is fixedly connected to the outside of the body (1) and is fixedly connected with the fixing part of the first driving piece (42), and the first fixing piece (43) is movably connected with the first movable piece (41).
4. An ion generating device according to claim 3, wherein the first fixing member (43) comprises:
a first fixing plate (431) which is positioned outside the body (1) and fixedly connected with the fixing part of the first driving piece (42);
a first fixed rod (432) fixedly connected between the first fixed plate (431) and the body (1) and penetrating through the second through hole (410) to be movably connected with the first movable piece (41);
the first movable member (41) includes:
the first movable plate (411) is fixedly connected with the movable part of the first driving piece (42), the second through hole (410) is formed in the first movable plate (411), and the first fixed rod (432) penetrates through the second through hole (410) and is movably connected with the first movable plate (411);
The first movable rod (412) is fixedly connected with the first movable plate (411), and the first movable rod (412) penetrates through the first through hole (11) to be movably connected with the body (1).
5. The ion generating apparatus according to claim 4, wherein the first fixed plate (431) and the first movable plate (411) each include two, respectively provided on both sides of the body (1) in the first direction (X);
the first fixed rods (432) and the first movable rods (412) comprise four, and two first fixed rods (432) and two first movable rods (412) are respectively arranged on two sides of the body (1) in the first direction (X).
6. The ion generating apparatus according to claim 5, wherein the grid driving mechanism (4) further comprises a first bellows (44), the first bellows (44) is sleeved on the outer periphery of a portion of the first movable rod (412) located outside the body (1), and both ends of the first bellows (44) are respectively abutted against one surface of the body (1) and one surface of the first movable plate (411) close to the body (1).
7. The ion generating apparatus as claimed in claim 4, wherein a through hole (4310) is formed in the first fixing plate (431) along the first direction (X);
The fixed part of the first driving piece (42) passes through the through hole (4310), and the movable part of the first driving piece (42) extends away from the through hole (4310) and is fixedly connected with the first movable plate (411).
8. The ion generating device according to claim 2, wherein the grid driving mechanism (4) further comprises:
connecting plate (45), be equipped with first through-hole (451) and second through-hole (452) on it, first through-hole (451) and second through-hole (452) are followed first direction (X) is arranged, all follow of first through-hole (451) and second through-hole (452) second direction (Y) runs through connecting plate (45), the holding in first through-hole (451) first grid (31), the holding in second through-hole (452) second grid (32), connecting plate (45) with be located on first movable part (41) part rigid coupling in acceping chamber (10).
9. The ion generating device according to claim 1, wherein a third through hole (12) is provided on the body (1), and the third through hole (12) communicates the accommodating cavity (10) with the outside of the body (1) along the second direction (Y);
The ion source driving mechanism (5) includes:
the second fixing piece (51) is positioned outside the body (1) and fixedly connected with the body (1);
the second movable piece is movably connected with the second fixed piece (51) and the body (1), and is positioned on one side of the second fixed piece (51) facing the body (1);
the second driving piece (53), the fixed part of second driving piece (53) with second fixed part (51) rigid coupling, the movable part of second driving piece (53) with second movable part rigid coupling, the fixed part and the movable part swing joint of second driving piece (53), second driving piece (53) drive the second movable part is in second direction (Y) motion, and then drive ion source (2) follow in third through-hole (12) second direction (Y) is close to or keeps away from one of first grid (31) and second grid (32).
10. The ion generating apparatus according to claim 9, wherein the second fixing member (51) includes:
a second fixing plate (511) fixedly connected with the fixing part of the second driving piece (53);
A second fixing rod (512) fixedly connected between the second fixing plate (511) and the body (1);
the second movable member includes:
the second movable plate (521) is provided with a fourth through hole (5210), the normal direction of the fourth through hole (5210) is the same as the second direction (Y), the second fixed rod (512) passes through the fourth through hole (5210) so that the second fixed piece (51) is movably connected with the second movable piece, and the second movable piece is fixedly connected with the movable part of the second driving piece (53);
one end of the second corrugated pipe (522) is fixedly connected to one surface of the second movable plate (521) facing the body (1), the other end of the second corrugated pipe is fixedly connected to one surface of the body (1) facing the second movable plate (521), and one end of the second corrugated pipe (522) connected with the body (1) surrounds the periphery of the third through hole (12);
the ion source (2) is fixedly connected to one surface of the second movable plate (521) facing the main body (1), and the ion source (2) is accommodated in the second corrugated pipe (522).
11. The ion generating apparatus according to claim 10, wherein the ion source driving mechanism (5) further comprises:
A floating joint (54) connected between the movable part of the second driving member (53) and the second movable plate (521);
a linear bearing (55) fixedly connected with the second movable plate (521), arranged in the fourth through hole (5210) and sleeved on the periphery of the second fixed rod (512);
a protective shell (56) in a hollow tubular shape, wherein the longitudinal direction of the protective shell (56) is the same as the second direction (Y), one end of the protective shell (56) is fixedly connected to one surface of the second movable plate (521) facing the body (1), the other end of the protective shell extends into the accommodating cavity (10), the protective shell (56) is accommodated in the second corrugated pipe (522), and the protective shell (56) is enclosed on the periphery of the ion source (2);
and a tray (57) accommodated in the accommodating cavity (10) and fixedly connected with the body (1), wherein the tray (57) and the ion source (2) are oppositely arranged in the second direction (Y) and are used for bearing the substrate.
12. A particle removal method, characterized in that the method employs an ion generating device according to any one of claims 1-11, and comprises the steps of:
Step S1-providing a substrate, placing the substrate in the accommodating cavity (10), and aligning the substrate with the ion source (2);
step S2-first operating the ion source drive mechanism (5) to move the ion source (2) away from the substrate, and then operating the grid drive mechanism (4) to mask the first grid (31) between the ion source (2) and the substrate;
s3, introducing a reaction gas into the accommodating cavity (10) so as to enable the reaction gas to react with the surface of the substrate to form a reaction layer;
step S4-operating the ion source driving mechanism (5) to bring the ion source (2) close to the substrate, starting the ion source (2), and enabling the ion source (2) to bombard the substrate through the first grid (31), so that the part of the reaction layer on the surface of the substrate, which is not covered by the first grid (31), is peeled off the substrate, and operating the ion source driving mechanism (5) again to enable the ion source (2) to be far away from the substrate;
step S5, repeating the steps S3 and S4 until a gully pattern with a preset depth is etched on the surface of the substrate;
step S6-operating the grid driving mechanism (4) so that the second grid (32) is covered between the ion source (2) and the substrate, operating the ion source driving mechanism (5) so that the ion source (2) is close to the substrate, starting the ion source (2), and enabling the ion source (2) to bombard the substrate through the second grid (32) so that the reaction layer on the substrate is completely stripped, and obtaining the substrate with the preset pattern.
13. The particle removal method of claim 12, wherein the substrate is silicon, the reactant gas is chlorine gas, and the source of the ion source is argon gas.
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