CN116794930A - Negative polyimide photoresist, method for preparing concave-convex pattern and semiconductor device - Google Patents

Negative polyimide photoresist, method for preparing concave-convex pattern and semiconductor device Download PDF

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CN116794930A
CN116794930A CN202210270027.7A CN202210270027A CN116794930A CN 116794930 A CN116794930 A CN 116794930A CN 202210270027 A CN202210270027 A CN 202210270027A CN 116794930 A CN116794930 A CN 116794930A
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parts
weight
negative
polyimide
polyimide precursor
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钱彬
梁乃强
安民石
于培培
王孟雪
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Changzhou Lider Electronic New Material Co ltd
Changzhou Tronly New Electronic Materials Co Ltd
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Changzhou Lider Electronic New Material Co ltd
Changzhou Tronly New Electronic Materials Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Abstract

The application provides a preparation method of negative polyimide photoresist and concave-convex patterns and a semiconductor device. The negative polyimide photoresist comprises 100 parts of polyimide precursor, 0.5-20 parts of photoinitiator and 100-2000 parts of solvent in parts by weight; wherein the polyimide precursor has a structure shown in a general formula (I), X, Y, R of the polyimide precursor has a specific structure, and m is an integer of 5-10000. The application utilizes the specific polyimide precursor to be matched with the photoinitiator to generate free radical to initiate crosslinking polymerization reaction in the exposure process, especially the oxime ester photoinitiator has a larger conjugated system and a stronger intramolecular electron transfer characteristic, has stable property in the storage process and is not easy to generate free radical to initiate crosslinking polymerization reaction, thereby maintaining the proper viscosity and stability of the glue solution and leading the negative polyimide to beThe photoresist glue solution has good storage stability and bottle opening stability.

Description

Negative polyimide photoresist, method for preparing concave-convex pattern and semiconductor device
Technical Field
The application relates to the technical field of semiconductors, in particular to a preparation method of negative polyimide photoresist and concave-convex patterns and a semiconductor device.
Background
Negative photosensitive polyimide resins have been widely used in the processing of fine pattern lines in the semiconductor field, and have good thermal stability, excellent mechanical properties, low dielectric constant, high breakdown voltage, low thermal expansion coefficient, excellent hydrolytic stability and long-term stability. In use, a cross-linking chemical reaction occurs through the exposed areas after coating, cross-linking bridges of ionic bond-covalent bond-ionic bond are formed among macromolecules of the areas, the areas are insoluble in a developing solution, and polymer gel is left to form various patterns after development. Different negative photosensitive polyimide resin combinations are disclosed in patent CN1980984B, CN106471089B, CN109867787A, CN106104381a, which can meet the current use requirements of the semiconductor field to varying degrees.
The negative photosensitive polyimide resin glue solution contains photosensitive substances, so that the solvent volatilizes and the photosensitivity disappears after the storage time is too long; in particular, the glue solution is in a state of being communicated with the external environment after the bottle is opened, so that the glue solution is easy to be interfered by external light, oxygen and other factors, and the storage stability and the bottle opening stability are short. The stability of the glue solution after opening the bottle is that the glue solution is placed in room temperature and air, a part of the glue solution is taken out every 7 days to test the viscosity, and after film making, exposure and development are carried out according to a certain method, the resolution is maintained unchanged, no residual glue is generated, and the change of the film thickness and the viscosity is not more than 5 percent. The storage stability of the resin glue solution of the existing negative polyimide resin is about 6 months, and the bottle opening stability is about 30 days. However, the storage stability and the bottle opening stability are closely related to the service life of the negative polyimide photoresist glue solution, and in practical application of the semiconductor industry, it is desirable to obtain the negative polyimide resin glue solution with longer storage stability and bottle opening stability so as to prolong the service life of the glue solution and better match the production rhythm of the semiconductor. Therefore, there is a need to develop a negative polyimide photoresist having long storage stability and bottle opening stability.
Disclosure of Invention
The application mainly aims to provide a preparation method of negative polyimide photoresist and concave-convex patterns and a semiconductor device, which are used for solving the problems of short storage stability and bottle opening stability of the negative polyimide photoresist solution in the prior art.
In order to achieve the above object, according to one aspect of the present application, there is provided a negative polyimide photoresist comprising 100 parts by weight of a polyimide precursor, 0.5 to 20 parts by weight of a photoinitiator, and 100 to 2000 parts by weight of a solvent; wherein the polyimide precursor has a structure shown in a general formula (I):
wherein m is an integer of 5 to 10000, and X has a structure shown in structural formulas I to VII:
y has a structure shown in structural formulas 1 to 3:
r has a structure represented by structural formula A:
the photoinitiator has a structure shown in a structural formula B:
further, the repeating unit of the polyimide precursor is selected from one or more of the following units 1 to 3:
wherein m is an integer of 5 to 10000, and R has a structure shown in a structure A:
further, the negative polyimide photoresist also comprises 2 to 10 parts by weight of polymerized monomers containing unsaturated double bonds; preferably, the unsaturated double bond containing polymeric monomer is an acrylic compound, more preferably one or more of polyethylene glycol diacrylate, polyethylene glycol dimethacrylate and N-methylol acrylate; more preferably, the number of ethylene glycol units in the polyethylene glycol diacrylate is 5 to 10, and the number of ethylene glycol units in the polyethylene glycol dimethacrylate is 5 to 10.
Further, the negative polyimide photoresist also comprises 2 to 10 parts of sensitizer according to the parts by weight; preferably, the negative polyimide photoresist further comprises 2-5 parts of sensitizer by weight; preferably, the sensitizer is one or more of 1-phenyl-5-lyophobic-1, 2,3, 4-tetrazole, N-bis (2-hydroxyethyl) aniline, benzyl-2-naphthyl ether, 1, 2-diphenyloxyethane, 4-morpholinophenone and Mi ketone.
Further, the negative polyimide photoresist also comprises 0.01 to 3 parts of polymerization inhibitor according to parts by weight; preferably, the photoresist composition further comprises 0.01 to 1 part of polymerization inhibitor in parts by weight; more preferably, the polymerization inhibitor is one or more of N-nitrosodiphenylamine, hydroquinone, methylhydroquinone, p-benzoquinone, p-tert-butylcatechol and N-phenyl-naphthylamine.
Further, the negative polyimide photoresist also comprises 5-15 parts of cross-linking agent according to parts by weight; preferably, the cross-linking agent is selected from the group consisting of amino resins and derivatives thereof; more preferably, the crosslinking agent is one or more of urea resin, glycol urea resin, vinyl urea resin, melamine resin, hexamethoxy methylated melamine, benzomelamine resin, and derivatives thereof; most preferably, the crosslinking agent is hexamethoxy methylated melamine.
Further, the negative polyimide photoresist comprises 100 parts of polyimide precursor, 2-10 parts of photoinitiator, 242-300 parts of solvent, 2-4 parts of sensitizer, 0.05-1 part of polymerization inhibitor and 10-15 parts of crosslinking agent according to parts by weight.
Further, the solvent is one or more of N-methyl-2-pyrrolidone, N-dimethylformamide, N-dimethylacetamide, dimethyl sulfoxide, tetramethylurea, gamma-butyrolactone, tetrahydrofuran and acetone.
According to another aspect of the present application, there is also provided a method of manufacturing a concave-convex pattern, including: step S1, coating the negative polyimide photoresist according to any one of claims 1 to 8 on the surface of a substrate to obtain a coating film or a substrate containing the coating film; step S2, a patterning mask is arranged between a light source and an optional substrate with a coating film or an optional coating film, and the light source is utilized to expose the optional substrate with the coating film or the optional coating film; step S3, removing the unexposed part by using a developing solution, and heating to obtain a concave-convex pattern; wherein the heating temperature is less than or equal to 450 ℃.
According to another aspect of the present application, there is also provided a semiconductor device comprising the negative polyimide photoresist according to any one of claims 1 to 8, or the concave-convex pattern produced by the method for producing a concave-convex pattern according to claim 9.
By applying the technical scheme of the application, the-COOR group in the polyimide precursor and the adjacent-CONH-group form an imide bond, and the specific photoinitiator can generate free radical to initiate crosslinking polymerization reaction in the exposure process, so that the polyimide precursor can be converted into polyimide resin. In particular, the oxime ester photoinitiator disclosed by the application introduces large pi bond groups such as naphthalene rings and sulfur-containing heterocycles, has a larger conjugated system and a stronger intramolecular electron transfer characteristic, has stable property in the storage process, is not easy to generate free radicals to initiate a crosslinking polymerization reaction, can maintain proper viscosity and stability of a glue solution, ensures that the negative polyimide photoresist glue solution has good storage stability and bottle opening stability, is obviously superior to the traditional negative polyimide photosensitive resin composition, and is more suitable for application in the semiconductor industry.
Detailed Description
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other. The present application will be described in detail with reference to examples.
As in the background art, the prior art has the problems of short storage stability and bottle opening stability of the negative polyimide photoresist glue solution. In order to solve the above problems, in an exemplary embodiment of the present application, there is provided a negative polyimide photoresist comprising 100 parts by weight of a polyimide precursor, 0.5 to 20 parts by weight of a photoinitiator, and 100 to 2000 parts by weight of a solvent; wherein the polyimide precursor has a structure shown in a general formula (I):
wherein m is an integer of 5 to 10000, and X has a structure shown in structural formulas I to VII:
y has a structure shown in structural formulas 1 to 3:
r has a structure represented by structural formula A:
the photoinitiator has a structure shown in a structural formula B:
in the polyimide precursor, X is of a low conjugated structure or contains more electron donating groups, Y is of a low conjugated structure or contains more electron withdrawing groups, and the polyimide precursor can prevent the polyimide precursor from forming a charge transfer complex with strong absorption, so that the photosensitivity or i-line passing of the polyimide precursor is improved, and meanwhile, a large pi-bond group of an aromatic system is introduced, so that the storage stability and the bottle opening stability of a glue solution are further improved. In the use process, the-COOR group in the polyimide precursor and the adjacent-CONH-group form an imide bond, and the photo initiator is matched to generate free radical in the exposure process to initiate crosslinking polymerization reaction, so that the polyimide precursor can be converted into polyimide resin. In particular, the oxime ester photoinitiator disclosed by the application introduces large pi bond groups such as naphthalene rings and sulfur-containing heterocycles, has a larger conjugated system and a stronger intramolecular electron transfer characteristic, has stable property in the storage process, is not easy to generate free radicals to initiate a crosslinking polymerization reaction, can maintain proper viscosity and stability of a glue solution, ensures that the negative polyimide photoresist glue solution has good storage stability and bottle opening stability, is obviously superior to the traditional negative polyimide photosensitive resin composition, and is more suitable for application in the semiconductor industry.
In view of cost, it is preferable that the repeating unit of the polyimide precursor is selected from one or more of the following units 1 to 3:
wherein m is an integer of 5 to 10000, and R has a structure shown in a structure A:
the polyimide precursor may be prepared by a conventional process, and is preferably prepared by the following method in order to improve productivity. First, an aromatic tetracarboxylic dianhydride having a tetravalent aromatic group X and an alcohol having a photopolymerizable unsaturated bond are reacted in the presence of a basic catalyst such as pyridine or triethylamine, wherein two carboxylic acid groups in the tetracarboxylic acid groups form an ester bond, and the remaining two carboxylic acid groups are dicarboxylic acids of an acid, to give a diester compound. To further reduce the cost, saturated fatty alcohols such as methanol, ethanol, n-propanol, isopropanol, n-butanol, and t-butanol may be mixed into the above unsaturated alcohols, so that the double bond density can be effectively reduced. The reaction solvent is one or more of amides, lactones, sulfoxides, ketones, ethers, halogenated hydrocarbons, hydrocarbons and tetramethylurea, preferably N-methyl-2-pyrrolidone, N-dimethylformamide, N-dimethylacetamide, dimethyl sulfoxide, tetramethylurea and gamma-butyrolactone, and can completely dissolve the diester of the solvent and the precursor of polyimide.
Secondly, under the action of a dehydration condensing agent, the diester compound is subjected to amide polycondensation with a solvent or a dispersed diamine compound having a 2-valent organic group Y in a solution, thereby obtaining a polyimide precursor. The dehydration condensing agent is preferably dicyclohexylcarbodiimide, 1-ethoxycarbonyl-2-ethoxy-1, 2-di-light quinoline, 1 '-carbonyldioxy-di-1, 2, 3-benzotriazole, N, N' -disuccinimidyl carbonate or the like. After the completion of the amide polycondensation reaction, the precipitate derived from the dehydration condensation, such as dicyclohexylurea, precipitated in the reaction solution is filtered off, if necessary. Subsequently, the reaction solution is precipitated in water or an aliphatic lower solvent. Then, the polyimide precursor thus deposited is redissolved in a solvent, the deposition operation is repeated to perform purification, and vacuum drying is performed to separate the target polyamide. In order to further improve the degree of purification, the polyimide precursor solution may be passed through an elution column packed with an ion exchange resin, thereby removing ionic impurities.
In order to improve the storage stability and the bottle opening stability of the glue solution and improve the photosensitive property, in a preferred embodiment, the negative polyimide photoresist further comprises 2 to 10 parts by weight of a polymerized monomer containing an unsaturated double bond; preferably, the unsaturated double bond-containing polymeric monomer is an acrylic compound that can be polymerized more rapidly by the photopolymerization initiator. More preferably one or more of polyethylene glycol diacrylate, polyethylene glycol dimethacrylate and N-methylol acrylate; more preferably, the number of ethylene glycol units in the polyethylene glycol diacrylate is 5 to 20, and the number of ethylene glycol units in the polyethylene glycol dimethacrylate is 5 to 20. The small molecules containing the polymerizable functional groups are more stable in the storage process of the glue solution, participate in the photo-curing reaction in the use process of the glue solution to reduce the viscosity of the system, and can further improve the photosensitive property of the photo-curing material.
For the purpose of further improving the sensitivity of the glue solution, in a preferred embodiment, the negative polyimide photoresist further comprises 2 to 10 parts by weight of sensitizer; preferably, the negative polyimide photoresist further comprises 2-5 parts of sensitizer by weight; preferably, the sensitizer is one or more of 1-phenyl-5-lyophobic-1, 2,3, 4-tetrazole, N-bis (2-hydroxyethyl) aniline, benzyl-2-naphthyl ether, 1, 2-diphenyloxyethane, 4-morpholinophenone and Mi ketone. The sensitizer does not absorb light energy but cooperatively participates in photochemical reaction, and the photoinitiator is matched to initiate crosslinking polymerization reaction, so that the initiation efficiency is improved while the storage stability and the bottle opening stability of the glue solution are ensured.
In order to improve the stability of the viscosity and the sensitivity of the composition solution when the glue solution is stored, in a preferred embodiment, the negative polyimide photoresist further comprises 0.01 to 3 parts of polymerization inhibitor by weight; preferably, the photoresist composition further comprises 0.01 to 1 part of polymerization inhibitor in parts by weight, wherein the polymerization inhibitor in the range can improve the storage stability and the bottle opening stability of the glue solution, and the photosensitive property of the glue solution is not reduced due to excessive content. More preferably, the polymerization inhibitor is one or more of N-nitrosodiphenylamine, hydroquinone, methylhydroquinone, p-benzoquinone, p-tert-butylcatechol and N-phenyl naphthylamine, and the polymerization inhibitor can better react with a small amount of generated chain free radicals to form non-free radical substances during the storage of the glue solution, thereby stopping the polymerization, improving the storage stability and the bottle opening stability of the glue solution and being more suitable for the negative polyimide photoresist system of the application.
In a preferred embodiment, the negative polyimide photoresist further comprises 5 to 15 parts by weight of a crosslinking agent upon heat curing of the coating film, thereby crosslinking the polyimide precursor or forming a crosslinked network itself, thereby further enhancing heat resistance. Preferably, the cross-linking agent is selected from the group consisting of amino resins and derivatives thereof; more preferably, the cross-linking agent is one or more of urea resin, glycol urea resin, vinyl alcohol urea resin, melamine resin, hexamethoxy methylated melamine, benzomelamine resin and derivatives thereof, and the cross-linking agent has double photosensitive functional groups, can generate double free radicals and polyimide precursor phase action more rapidly after exposure, forms bridge bonds between polymer molecular chains and becomes an insoluble substance with a three-dimensional structure. Most preferably, the crosslinking agent is hexamethoxy methylated melamine, so that the storage stability and the bottle opening stability of the glue solution are further improved while the crosslinking effect is ensured.
In the practical application process, preferably, the negative polyimide photoresist comprises 100 parts of polyimide precursor, 2-10 parts of photoinitiator, 242-300 parts of solvent, 2-4 parts of sensitizer, 0.05-1 part of polymerization inhibitor and 10-15 parts of crosslinking agent in parts by weight. In addition, various additives such as a silane coupling agent can be added as required, so that the storage stability and the bottle opening stability of the negative polyimide photoresist solution can be further improved.
The viscosity is generally adjusted by adjusting the concentration during the preparation of the photoresist. In a preferred embodiment, the solvent is one or more of N-methyl-2-pyrrolidone, N-dimethylformamide, N-dimethylacetamide, dimethyl sulfoxide, tetramethylurea, gamma-butyrolactone, tetrahydrofuran and acetone, and the solvent has better solubility to each component in the glue solution, and has more stable property, so that the stability of the glue solution is further improved.
In still another exemplary embodiment of the present application, there is also provided a method for preparing a concave-convex pattern, including: step S1, coating the negative polyimide photoresist on the surface of a substrate to obtain a coating film or a substrate containing the coating film; step S2, a patterning mask is arranged between a light source and an optional substrate with a coating film or an optional coating film, and the light source is utilized to expose the optional substrate with the coating film or the optional coating film; step S3, removing the unexposed part by using a developing solution, and heating to obtain a concave-convex pattern; wherein the heating temperature is less than or equal to 450 ℃.
Specifically, the photosensitive resin composition is first coated on a Si wafer as a substrate. The coating method may be spin coating using a spin coater, coating using an extrusion coater, spray coating using a spray coater, dipping, printing, blade coating, shaft coating, or the like, but spin coating is preferred, and the thickness of the coating film can be more easily adjusted by adjusting the rotation speed. The film thickness after final curing is controlled to be 0.1 to 20 μm by setting the solid content and the coating rotational speed of the composition. Then, the coating film or the substrate containing the coating film is prebaked at 80 to 120 ℃, and after the coating film is dried, the coating film is irradiated with an active light beam in a desired pattern shape through a photomask. The active light may be X-ray, electron beam, ultraviolet ray or visible light, and is preferably an active light having a wavelength of 200 to 500nm, and most preferably an i-line having a wavelength of 365 nm. The exposure machine may use a general contact exposure machine or a stepper. Alternatively, the pattern may be directly drawn on the coating film by laser irradiation with chemical rays, and then heated at 40 to 120 ℃ for 10 to 240 seconds as needed to perform post-exposure baking or pre-development baking.
Finally, the unexposed part is removed by using a developing solution, so that the concave-convex pattern is obtained. The developing solution can use a good solvent of polyimide precursor or a mixed solvent of good solvent and poor solvent, wherein the good solvent is one or more of N-methyl-2-pyrrolidone, N-dimethylformamide, N-dimethylacetamide, N-acetyl 2-pyrrolidone, dimethyl sulfoxide, gamma-butyrolactone, alpha-acetyl-gamma-butyrolactone, cyclopentanone and cyclohexanone; the poor solvent is one or more of toluene, xylene, methanol, ethanol, isopropanol, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether and water. When a mixed solvent of a good solvent and a poor solvent is used, the mixing ratio thereof can be adjusted according to the solubility of the polyamide resin coating film to be developed and the development method. The developing method may be selected from dipping, squeegee, spin coating, and the like as needed. After the development is completed, the negative uneven pattern formed by the development is washed with a rinse solution to remove the developer. The flushing liquid is one or more of distilled water, methanol, ethanol, isopropanol, toluene, xylene, propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether. After the completion of the rinsing, the uneven pattern was heated at 450 ℃ or lower to cause a dehydrative ring closure reaction, thereby obtaining a cured uneven pattern composed of a polyimide resin excellent in heat resistance. The thermal cyclization reaction may be carried out in an atmosphere of air or an inert gas such as nitrogen or helium using a hot plate, an inert oven, a temperature-rising oven, or the like.
In still another exemplary embodiment of the present application, there is also provided a semiconductor device including the above negative polyimide photoresist, or the above concave-convex pattern manufactured by the above method for manufacturing a concave-convex pattern. In the semiconductor manufacturing process, the concave-convex pattern formed by curing is used for a protective film, an insulating film, or an α -ray cut-off film of a semiconductor, so that the concave-convex pattern can be effectively used in semiconductor manufacturing.
The application is described in further detail below in connection with specific examples which are not to be construed as limiting the scope of the application as claimed.
Example 1
Synthesis of polyimide Precursor (PAE): into a 1L flask was charged 32.2225g (100 mmol) of 3,3', 4' -benzophenone tetracarboxylic dianhydride, 50mL of gamma-butyrolactone (GBL), 26.505g (200 mol) of hydroxyethyl methacrylate, 15.820g (200 mmol) of pyridine and stirring at room temperature for 12 hours. Then, after cooling at-10℃for 20 minutes, a solution obtained by dissolving 41.266g (200 mmol) of dicyclohexylcarbodiimide in 20mLGBL was added dropwise, and stirring was maintained at a low temperature for 30 minutes. After 2 hours of reaction, 32.0233g (90 mmol) of 2,2 '-bis (trifluoromethyl) -4,4' -diaminobiphenyl was slowly added to a solution of 80mLGBL, stirred for 2 hours, and then warmed to room temperature and stirred for 5 hours. Thereafter, 6mL of ethanol was added to the reaction system to quench the reaction, 80mLGBL was added for dilution, and the dehydration condensation precipitate (dicyclohexylurea) was removed by suction filtration. Subsequently, the reaction solution was aged into methanol, and the polymer precipitated at this time was separated. Subsequently, the polymer was redissolved in 80ml gbl, and after passing through an ion exchange resin, the solution was slowly dropped into 1L of ion exchange water, and after the polymer was completely precipitated, the precipitated polymer was recovered, washed with water, and dried in vacuum at 40 ℃ for 24 hours to obtain a polyimide precursor resin PAE having the following structure:
wherein m is 30 and R isWeight of PAE as determined by Gel Permeation Chromatography (GPC)The average molecular weight (converted to polystyrene) was 21000.
Preparation of negative polyimide photoresist: 100 parts by weight of the polyimide precursor PAE, 4 parts by weight of tetraethyleneglycol methacrylate, 1 part by weight of a photoinitiator, 1 part by weight of 1-phenyl-5-hydrophobic-1, 2,3, 4-tetrazole, 3 parts by weight of N, N-bis (2-hydroxyethyl) aniline, 0.05 part by weight of N-nitrosodiphenylamine and 10 parts by weight of hexamethoxy methylated melamine were dissolved in 242 parts by weight of N-methyl-2-pyrrolidone (NMP) solution, and filtered through a polytetrafluoroethylene filter having a pore size of 0.5 μm to obtain a varnish-like negative polyimide photoresist solution. The photoinitiator has a structure shown in a structure B:
example 2
Example 2 differs from example 1 only in that the photoinitiator is 10 parts by weight.
Example 3
Example 3 differs from example 1 only in that the photoinitiator was 20 parts by weight.
Example 4
Example 4 differs from example 1 only in that the polyimide precursor isWherein m is 30 and R is->/>
Example 5
Example 5 differs from example 1 only in that the polyimide precursor isWherein m is 30 and R is->
Example 6
Example 6 differs from example 1 only in that the polyimide precursor isWherein X is->m is 30.
Example 7
Example 7 differs from example 1 only in that the polyimide precursor isWherein X is->m is 30.
Example 8
Example 8 differs from example 1 only in that the polyimide precursor isWherein X ism is 30.
Comparative example 1
Comparative example 1 differs from example 1 only in that the photoinitiator was 1, 3-diphenylpropanetrione-2- (0-ethylcarbonyl).
Comparative example 2
Comparative example 2 differs from example 1 only in that the photoinitiator is 2,2' -diethoxyacetophenone.
Comparative example 3
Comparative example 3 differs from example 1 only in that the photoinitiator is benzophenone.
Comparative example 4
Comparative example 4 differs from example 1 only in that the photoinitiator was 0.2 parts by weight.
Comparative example 5
Comparative example 5 differs from example 1 only in that the photoinitiator was 0.5 parts by weight.
Comparative example 6
Comparative example 6 differs from example 1 only in that the photoinitiator was 25 parts by weight.
Comparative example 7
Comparative example 7 differs from example 1 only in that the polyimide precursor wasWherein m is 40.
The resin compositions of examples 1 to 7 and comparative examples 1 to 7 were coated on a 5-inch silicon wafer using a spin coater, and prebaked at 80℃for 40 minutes to obtain a film having an initial film thickness of 10. Mu.m. Using an i-line stepper, at 50-600 mJ/cm with a photomask interposed therebetween 2 Within the range of 50mJ/cm per stage 2 Is used to change the exposure. After 30 minutes from exposure, the mixture of gamma-butyrolactone and xylene 50/50 (v/v) was developed by spin spraying for a period of 1.4 times the period of time required for complete dissolution and disappearance of the unexposed portion, and then spin-spray-rinsed with isopropyl alcohol for 10 seconds to obtain a concave-convex pattern formed of a polyimide resin. The resulting uneven pattern was observed by an optical microscope (olympus MX 63L), and the size (resolution) of the hole through which the lowest exposure dose required for producing an unswollen and well-defined pattern was irradiated and the presence or absence of residual gum in the unexposed portion were evaluated.
Storage stability of the glue solution: after the glue solution is prepared, the glue solution is packaged in a glove box filled with nitrogen, and the packaged glue solution is stored in a refrigerator at a low temperature of 0 ℃. Every 30 days, a part of the dope was taken out in a glove box filled with nitrogen gas to test its viscosity, and film formation, exposure and development were performed according to the above-described method. The resolution is required to be maintained unchanged, no residual glue is generated, and no change in film thickness and viscosity is defined as no change by not more than 5%. The number of days when the above properties were unchanged was the storage stability of the dope.
Stability of glue solution in opening bottle: after opening the bottle, the glue was left at room temperature in air. A part of the glue solution was taken out every 7 days to test its viscosity, and film formation, exposure and development were performed according to the above-described method. The resolution is required to be maintained unchanged, no residual glue is generated, and no change in film thickness and viscosity is defined as no change by not more than 5%. The number of days when the above properties were unchanged was the stability of the glue solution in opening the bottle.
The results of each test are shown in tables 1 to 3.
TABLE 1
TABLE 2
TABLE 3 Table 3
In comparative examples 4 and 5 in table 3, since the initiator content was too low, an effective photolithographic pattern could not be formed, and thus the results of resolution, presence or absence of residual gum, storage stability of gum solution and bottle opening stability could not be obtained. In comparative example 6, the content of the initiator was too high, which resulted in residual gum, and the results of storage stability and bottle opening stability of the gum solution could not be obtained.
As can be seen from the above, in the examples of the present application, when the type and content of the photoinitiator are within the scope of the present application, and when the polyimide precursor used is the precursor of the present application, a better resolution (5 μm), a good storage stability and a good bottle opening stability can be obtained. The storage stability and the open stability of the glue solutions using the specific content of photoinitiator and precursor according to the application are significantly longer than those of the resin combinations using other photoinitiators and their content and other precursors in the comparative examples.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (10)

1. The negative polyimide photoresist is characterized by comprising 100 parts of polyimide precursor, 0.5-20 parts of photoinitiator and 100-2000 parts of solvent in parts by weight; wherein the polyimide precursor has a structure shown in a general formula (I):
wherein m is an integer of 5 to 10000, and X has a structure shown in structural formulas I to VII:
y has a structure shown in structural formulas 1 to 3:
r has a structure represented by structural formula A:
the photoinitiator has a structure shown in a structural formula B:
2. the negative-tone polyimide photoresist according to claim 1, wherein the repeating unit of the polyimide precursor is selected from one or more of the following units 1 to 3:
wherein m is an integer of 5 to 10000, and R has a structure shown in a structure A:
3. the negative polyimide photoresist according to claim 1 or 2, further comprising 2 to 10 parts by weight of a polymerized monomer containing an unsaturated double bond;
preferably, the unsaturated double bond-containing polymeric monomer is an acrylic compound, more preferably one or more of polyethylene glycol diacrylate, polyethylene glycol dimethacrylate and N-methylol acrylate;
more preferably, the number of ethylene glycol units in the polyethylene glycol diacrylate is 5 to 10, and the number of ethylene glycol units in the polyethylene glycol dimethacrylate is 5 to 10.
4. The negative polyimide photoresist according to any one of claims 1 to 3, further comprising 2 to 10 parts by weight of a sensitizer; preferably, the negative polyimide photoresist further comprises 2-5 parts of the sensitizer in parts by weight;
preferably, the sensitizer is one or more of 1-phenyl-5-lyophobic-1, 2,3, 4-tetrazole, N-bis (2-hydroxyethyl) aniline, benzyl-2-naphthyl ether, 1, 2-diphenyloxyethane, 4-morpholinophenone and Mi ketone.
5. The negative polyimide photoresist according to claim 4, further comprising 0.01 to 3 parts by weight of a polymerization inhibitor; preferably, the photoresist composition further comprises 0.01 to 1 part by weight of the polymerization inhibitor;
more preferably, the polymerization inhibitor is one or more of N-nitrosodiphenylamine, hydroquinone, methylhydroquinone, p-benzoquinone, p-tert-butylcatechol and N-phenyl-naphthylamine.
6. The negative polyimide photoresist according to claim 5, further comprising 5 to 15 parts by weight of a crosslinking agent; preferably, the cross-linking agent is selected from amino resins and derivatives thereof;
more preferably, the cross-linking agent is one or more of urea resin, glycol urea resin, vinyl urea resin, melamine resin, hexamethoxy methylated melamine, benzomelamine resin, and derivatives thereof; most preferably, the crosslinker is hexamethoxy methylated melamine.
7. The negative polyimide photoresist according to claim 6, wherein the negative polyimide photoresist comprises 100 parts by weight of the polyimide precursor, 2 to 10 parts by weight of the photoinitiator, 242 to 300 parts by weight of the solvent, 2 to 4 parts by weight of the sensitizer, 0.05 to 1 part by weight of the polymerization inhibitor, and 10 to 15 parts by weight of the crosslinking agent.
8. The negative polyimide photoresist according to claim 1, wherein the solvent is one or more of N-methyl-2-pyrrolidone, N-dimethylformamide, N-dimethylacetamide, dimethylsulfoxide, tetramethylurea, γ -butyrolactone, tetrahydrofuran, and acetone.
9. A method of producing a relief pattern, the method comprising:
step S1, coating the negative polyimide photoresist according to any one of claims 1 to 8 on the surface of a substrate to obtain a coating film or a substrate containing the coating film;
step S2, a patterning mask is arranged between a light source and the optional substrate containing the coating film or the optional coating film, and the light source is utilized to expose the optional substrate containing the coating film or the optional coating film;
step S3, removing the unexposed part by using a developing solution, and heating to obtain the concave-convex pattern;
wherein the heating temperature is less than or equal to 450 ℃.
10. A semiconductor device comprising the negative polyimide photoresist according to any one of claims 1 to 8, or the concave-convex pattern produced by the method for producing a concave-convex pattern according to claim 9.
CN202210270027.7A 2022-03-18 2022-03-18 Negative polyimide photoresist, method for preparing concave-convex pattern and semiconductor device Pending CN116794930A (en)

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