CN116782738B - Bonding sheet separating device and separating method thereof - Google Patents
Bonding sheet separating device and separating method thereof Download PDFInfo
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- CN116782738B CN116782738B CN202311062453.2A CN202311062453A CN116782738B CN 116782738 B CN116782738 B CN 116782738B CN 202311062453 A CN202311062453 A CN 202311062453A CN 116782738 B CN116782738 B CN 116782738B
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 146
- 239000000463 material Substances 0.000 claims abstract description 96
- 238000000926 separation method Methods 0.000 claims abstract description 79
- 238000001816 cooling Methods 0.000 claims abstract description 34
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- 238000003825 pressing Methods 0.000 claims abstract description 24
- 238000005086 pumping Methods 0.000 claims description 14
- 239000011261 inert gas Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 10
- 239000002826 coolant Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims 1
- 238000004064 recycling Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000000110 cooling liquid Substances 0.000 description 8
- 239000002131 composite material Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 4
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/799—Apparatus for disconnecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/1051—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/10513—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/7999—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto for disconnecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/98—Methods for disconnecting semiconductor or solid-state bodies
Abstract
The invention discloses a bonding sheet separating device and a bonding sheet separating method, and relates to the technical field of semiconductor chip manufacturing. The bonding piece comprises a supporting substrate and a piezoelectric material substrate, the piezoelectric material substrate comprises a residual material substrate and a film layer, the film layer is positioned between the supporting substrate and the residual material substrate, a separating device of the bonding piece is used for separating the residual material substrate from the film layer, the separating device of the bonding piece comprises a separator, a supporting table and a pressing rod, and a separating cavity is arranged in the separator. The supporting table is arranged in the separation cavity, a heater is arranged in the supporting table, and the supporting table is used for supporting the bonding sheet and heating the bonding sheet. The pressure lever is movably arranged on the separator, the pressure lever comprises a pressure head, the pressure head is arranged opposite to the supporting table, the pressure head has a cooling function, the pressure lever can move to the position where the pressure head is abutted against the residual material substrate, and the pressure head is used for applying pressure and cooling to the residual material substrate. The separation device using the bonding sheet realizes the recycling of the piezoelectric material substrate and reduces the cost.
Description
Technical Field
The present invention relates to the field of semiconductor chip manufacturing technology, and in particular, to a bonding sheet separating device and a bonding sheet separating method.
Background
When the submicron piezoelectric composite substrate is produced at present, after the piezoelectric material substrate is subjected to an ion implantation process, a support substrate with an oxide layer is bonded with an ion implantation surface of the piezoelectric material substrate, the lithium tantalate layer in a bonding sheet is required to be thinned to the thickness of 10um-50um due to the difference of thermal expansion coefficients of the piezoelectric material substrate and the support substrate, and the required lithium tantalate composite substrate with the thickness of the top lithium tantalate film layer at the nanoscale is prepared after a thermal separation process, so that great waste of materials is caused.
In order to realize the recycling of the piezoelectric material, the existing thermal separation process improves the warping caused by the thermal stress of the piezoelectric material substrate in a double-sided bonding mode, and realizes the recycling of the piezoelectric material substrate. The specific method comprises the following steps: the virtual substrate is introduced to bond with the piezoelectric material substrate to form a first bonding body, the piezoelectric material substrate is thinned and polished to 10-50 um, the piezoelectric material substrate is bonded with the supporting substrate to form a second bonding body after ion implantation, and the first bonding body after thermal separation can realize the recycling of the piezoelectric material, but the process steps are increased, so that the process cost is increased.
Disclosure of Invention
The invention aims to provide a bonding sheet separating device and a bonding sheet separating method, so that the separation of a composite substrate and a piezoelectric material remainder substrate is realized without thinning a piezoelectric material substrate, the process time is shortened, and the recycling rate of a piezoelectric material is improved.
To achieve the purpose, the invention adopts the following technical scheme:
the device for separating the bonding sheet comprises a supporting substrate and a piezoelectric material substrate, wherein the piezoelectric material substrate comprises a residual material substrate and a film layer, the film layer is positioned between the supporting substrate and the residual material substrate, and the device for separating the bonding sheet is used for separating the residual material substrate from the film layer, and the device for separating the bonding sheet comprises:
a separator, in which a separation chamber is provided;
the supporting table is arranged in the separation cavity, a heater is arranged in the supporting table, and the supporting table is used for supporting the bonding sheet and heating the bonding sheet;
the pressure bar is movably arranged on the separator and comprises a pressure head, the pressure head is arranged opposite to the supporting table and has a cooling function, the pressure bar can move to the pressure head to be abutted against the residual material substrate, and the pressure head is used for applying pressure and cooling to the residual material substrate.
As an alternative of the bonding sheet separating device, a first cooling pipeline is arranged in the pressure head, and circulating cooling liquid in the first cooling pipeline is used for cooling the residual material substrate.
As an alternative of the separating device of the bonding sheet, a second cooling pipeline is arranged in the side wall of the separator, and circulating cooling liquid in the second cooling pipeline is used for cooling the separating cavity.
As an alternative to the separation means of the bonding sheet, the outer periphery of the support table is provided with a heat insulating layer.
As an alternative to the separation means of the bonding sheets, the insulating layer is made of graphite felt.
As an alternative to the separating device of the bonding sheet, a temperature sensor is further disposed in the support table, and the temperature sensor is used for detecting the temperature of the support table.
As an alternative to the separating device of the bonding sheet, a pressure sensor is disposed in the pressing head, and the pressure sensor is used for detecting the pressure applied by the pressing head to the residual material substrate.
As an alternative of the separation device of the bonding sheet, at least one pumping and inflating port is arranged on the separator, the pumping and inflating port is communicated with the separation cavity, and the separation cavity is pumped and inflated through the pumping and inflating port.
As an alternative to the separating device of the bonding sheet, a vacuum gauge is provided on the separator for detecting the gas pressure in the separating chamber.
A method of separating a bonding sheet, which is applied to the bonding sheet separating device according to any one of the above aspects, the bonding sheet separating method comprising the steps of:
placing the bonding sheet on the support table in the separation chamber, the support substrate being placed adjacent to the support table;
the pressing rod is moved until the pressing head moves to be abutted against the residual material substrate, and the pressing head applies set pressure to the residual material substrate and cools the residual material substrate;
starting the heater, heating the supporting table to 200-300 ℃, controlling the temperature of the residual material substrate at 150-200 ℃, and separating the residual material substrate from the film layer after the setting time is kept;
stopping heating by the heater, and waiting for the support table to be cooled to below 50 ℃;
and taking out the separated bonding sheet.
As an alternative to the method for separating the bonding sheet, the separator is provided with at least one pumping port, and the method further comprises the following steps before the step of turning on the heater:
and vacuumizing the separation cavity through the vacuumizing hole, and then introducing inert gas to keep the air pressure in the separation cavity in a first set air pressure state.
As an alternative to the method of separating the bonding sheet, after the support table is cooled to below 50 ℃, the separation chamber is inflated to a second set air pressure state through the inflation inlet.
As an alternative to the separation method of the bonding sheet, the set pressure is 0N to 100N.
As an alternative to the separation method of the bonding sheet, the set time is 0.5h to 10h.
As an alternative to the bonding sheet separation method, the first set air pressure state is: 0mBar to 50mBar.
As an alternative to the bonding sheet separation method, the second set air pressure state is: 900mBar-1000mBar.
The invention has the beneficial effects that:
according to the bonding sheet separating device provided by the invention, the separating cavity is arranged in the separator, and the supporting table capable of heating and supporting the bonding sheet is arranged in the separating cavity. The pressing rod is movably arranged on the separator and is arranged opposite to the supporting table, the pressing rod can be in butt joint with the residual material substrate of the piezoelectric material substrate, the pressing head applies pressure to the bonding sheet and cools the residual material substrate, so that the piezoelectric material substrate is pressed and cooled in the heating and separating process of the bonding sheet by the supporting table, the thermal expansion of the piezoelectric material substrate in the heating process is restrained, the temperature of the residual material substrate is lower than that of the supporting substrate, the thermal stress and warping of the bonding sheet are eliminated or relieved, and the complete separation of the bonding sheet is realized. The separation device of the bonding sheet does not need to thin the piezoelectric material substrate, reduces the process steps and shortens the process time; meanwhile, the piezoelectric material substrate is recycled, and the cost is reduced.
The bonding sheet separation method provided by the invention is applied to the bonding sheet separation device. The bonding sheet is placed on a supporting table in the separation cavity, the pressure head applies set pressure to the bonding sheet, the pressure head can cool the residual material substrate close to the bonding sheet, after the heater is started, the supporting table is heated to 200-300 ℃, the temperature of the residual material substrate is controlled to 150-200 ℃, after the set time is kept, the separation of the residual material substrate and the film layer is realized, then the heating is stopped, and after the temperature of the supporting table is reduced to 50 ℃, the separated bonding sheet is taken out, so that the waste of the piezoelectric material substrate is avoided, the process steps are not required to be increased, the process time is shortened, and the cost is reduced.
Drawings
FIG. 1 is a schematic view of a bonding pad according to an embodiment of the present invention;
FIG. 2 is a schematic structural view of a separating device for bonding sheets according to an embodiment of the present invention;
FIG. 3 is a schematic structural view of a bonding sheet separating device according to an embodiment of the present invention;
fig. 4 is a flowchart of a method for separating a bonding pad according to an embodiment of the present invention.
In the figure:
100. a support substrate; 200. a piezoelectric material substrate;
201. a remainder substrate; 202. a thin film layer;
1. a separator; 2. a support table; 3. a compression bar; 4. a heater; 5. a thermal insulation layer;
11. a separation chamber; 31. a pressure head; 32. and a slide bar.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
The technical scheme of the invention is further described below by the specific embodiments with reference to the accompanying drawings.
As shown in fig. 1, the bonding sheet includes a support substrate 100 and a piezoelectric material substrate 200, the piezoelectric material substrate 200 includes a remainder substrate 201 and a thin film layer 202, and the thin film layer 202 is located between the support substrate 100 and the remainder substrate 201. The support substrate 100 has a low thermal expansion coefficient, and includes a semiconductor substrate (e.g., si, siC, sapphire, alN, etc.) and an insulating substrate (e.g., ceramic, glass, etc.). The remainder substrate 201 and the film layer 202 are made of the same material, and comprise piezoelectric materials with high thermal expansion coefficients such as lithium niobate, lithium tantalate and the like.
The technological process for preparing the bonding sheet comprises the following steps:
(1) A support substrate 100 having a low thermal expansion coefficient is provided, wherein the surface to be bonded of the support substrate 100 comprises a polycrystalline layer or an amorphous layer of 1.5um to 3um, and the surface of the polycrystalline layer or the amorphous layer has an electrical insulation layer (silicon oxide) with a thickness of 0.5um to 3um, and the total thickness of the support substrate 100 is 500um to 1000um.
(2) A piezoelectric material substrate 200 having a high thermal expansion coefficient is provided, the piezoelectric material substrate 200 having a thickness of 350um to 500um, and ion implantation (H implantation) is performed on one surface to be bonded therein + And/or He + ) The weakened surface is formed, the piezoelectric material substrate 200 is divided into a remainder substrate 201 and a thin film layer 202, the ion implantation energy is 50Kev-250Kev, and the implantation dose is 1×10 16 Ion/cm 2 -1×10 18 Ion/cm 2 The implantation depth is 0.3um-1.5um.
(3) The support substrate 100 is bonded to the piezoelectric material substrate 200 to form a bonding sheet.
In the production of the submicron piezoelectric composite substrate, the bonding sheet is heated to perform splitting separation, and is separated into a piece of piezoelectric composite substrate (including the support substrate 100 and the thin film layer 202) and a piece of remainder substrate 201.
In order to realize recycling of the remainder substrate 201, the present embodiment provides a bonding sheet separating device for separating the remainder substrate 201 from the thin film layer 202.
As shown in fig. 2 and 3, the bonding sheet separating device comprises a separator 1, a supporting table 2 and a pressing rod 3, wherein a separating cavity 11 is arranged in the separator 1, and the separating cavity 11 can enable the bonding sheet to be in an environment suitable for separating the bonding sheet in the separating process, so that the bonding sheet is prevented from being influenced by external environment in the separating process.
The supporting table 2 is arranged in the separation cavity 11, the heater 4 is arranged in the supporting table 2, and the supporting table 2 is used for supporting the bonding sheet and heating the bonding sheet. The pressure bar 3 is movably arranged on the separator 1, the pressure bar 3 comprises a pressure head 31, the pressure head 31 is arranged opposite to the supporting table 2, the pressure head 31 has a cooling function, the pressure bar 3 can move to the position where the pressure head 31 is abutted with the residual material substrate 201, and the pressure head 31 is used for applying pressure and cooling to the residual material substrate 201.
In the process of heating and separating the bonding sheet by the support table 2, the piezoelectric material substrate 200 is pressurized and cooled to inhibit thermal expansion of the piezoelectric material substrate 200 in the heating process, and the temperature of the remainder substrate 201 is lower than that of the support substrate 100, so that thermal stress and warpage of the bonding sheet are eliminated or relieved, and complete separation of the bonding sheet is realized. The separation device of the bonding sheet does not need to thin the piezoelectric material substrate 200, so that the process steps are reduced, and the process time is shortened; and simultaneously, the piezoelectric material substrate 200 is recycled, and the cost is reduced.
In this embodiment, the support table 2 is disposed at the bottom of the separation chamber 11, the compression bar 3 is movably disposed at the top of the separation chamber 11, and the pressure head 31 is disposed corresponding to the support surface of the support table 2. The compression bar 3 further comprises a sliding rod 32, the pressure head 31 is arranged at one end of the sliding rod 32 close to the supporting surface, a through hole is formed in the top of the separation cavity 11, the sliding rod 32 and the through hole are movably arranged at the top of the separation cavity 11 in a mode of matching the sliding block and the sliding groove, or the sliding rod 32 is in transition fit with the through hole, and the sliding rod 32 can move up and down relative to the through hole. One end of the slide bar 32 far away from the pressure head 31 is connected with a pressure regulator, and the pressure regulator is used for regulating the pressure applied on the slide bar 32 so that the pressure applied by the pressure head 31 to the bonding sheet is set pressure, and the thermal expansion of the piezoelectric material substrate 200 can be inhibited without damaging the bonding sheet. The pressing surface of the indenter 31 is a horizontal surface, and the horizontal surface can completely cover the remainder substrate 201 for suppressing thermal expansion of the piezoelectric material substrate 200 during heating.
The bonding sheet separating device provided in this embodiment further includes a control unit, where the heater 4 is electrically connected to the control unit, and the control unit is configured to control heating power and heating time of the heater 4.
Specifically, a first cooling line is provided in the ram 31, and a circulating coolant in the first cooling line is used to cool the remainder substrate 201. Since the thermal expansion coefficient of the piezoelectric material substrate 200 is high, in order to prevent the risk of fragments of the piezoelectric material substrate 200 caused by deformation of the piezoelectric material substrate 200 due to instantaneous thermal stress release during the thermal separation process of the bonding sheet, the piezoelectric material substrate 200 close to the indenter 31 is cooled by the circulating cooling liquid in the first cooling pipeline, so as to ensure that the temperature of the piezoelectric material substrate 200 is lower than the temperature of the supporting substrate 100 during the temperature rising process of the bonding sheet, thereby eliminating or relieving the thermal stress and warpage of the bonding sheet.
Further, a second cooling pipeline is arranged in the side wall of the separator 1, and circulating cooling liquid in the second cooling pipeline is used for cooling the separation cavity 11. In the process of heating the supporting table 2, heat of the supporting table 2 can be transferred into the separation cavity 11, so that the temperature in the separation cavity 11 is increased, the heat after the temperature in the separation cavity 11 is increased can be transferred to the piezoelectric material substrate 200, and the circulating cooling liquid in the second cooling pipeline is used for ensuring that the temperature in the separation cavity 11 is not greatly increased, so that the temperature influence on the piezoelectric material substrate 200 is further reduced.
Further, the outer periphery of the support table 2 is provided with a heat insulating layer 5, and the heat insulating layer 5 is made of graphite felt. By arranging the heat insulation layer 5, the heat transfer of the supporting table 2 into the separation cavity 11 is reduced, and the temperature in the separation cavity 11 is further ensured not to be greatly increased.
The inlet of the first cooling pipeline and the inlet of the second cooling pipeline are connected with the cooling liquid input pipeline, and the outlet of the first cooling pipeline and the outlet of the second cooling pipeline are connected with the cooling liquid output pipeline so as to realize cooling liquid circulation.
Of course, in other embodiments, cooling of the piezoelectric material substrate 200 and the separation chamber 11 may be achieved by providing a fan or shower, or the like.
Specifically, a temperature sensor is further disposed in the support table 2, and the temperature sensor is used for detecting the temperature of the support table 2. The temperature sensor is in communication connection with the control unit, and the temperature sensor is used for sending the detected temperature of the supporting table 2 to the control unit, and the control unit controls the heater 4 according to the received temperature so as to reach the heating temperature of the supporting table 2.
Specifically, a pressure sensor is provided in the ram 31, and the pressure sensor is used to detect the pressure applied by the ram 31 to the bonding pad. The pressure sensor is in communication connection with the control unit, and the pressure sensor is used for sending the pressure applied by the pressure head 31 to the residual material substrate 201 to the control unit, and the control unit controls the pressure regulator according to the received pressure so as to achieve the set pressure.
Further, at least one pumping and charging port is arranged on the separator 1, the pumping and charging port is communicated with the separation cavity 11, and the separation cavity 11 is pumped and charged through the pumping and charging port. The pumping port communicates with a vacuum device or an inert gas source for pumping vacuum or air or nitrogen, argon, helium or other inert gas into the separation chamber 11. In the heating and separating process of the bonding sheet, the air in the separation cavity 11 is discharged by vacuumizing the separation cavity 11 and then inert gas is filled, or the inert gas is filled into the separation cavity 11 in a normal pressure state, so that the bonding sheet is prevented from generating chemical reaction with gases such as oxygen in the air and the like in the heating and separating process, and the performance is influenced.
In this embodiment, the pumping and charging port includes an air extracting port and an air charging port, the air extracting port is connected with the vacuum device, the air charging port is connected with the inert gas source, the number of the air extracting port or the air charging port is not particularly limited, and the specific design can be performed according to actual situations.
Further, a vacuum gauge is provided on the separator 1 for detecting the gas pressure in the separation chamber 11. The pressure of the gas after vacuumizing in the separation cavity 11 is detected through a vacuum gauge, so that the air pressure environment in the separation cavity 11 meets the air pressure state of heating and separating the bonding sheet.
As shown in fig. 4, the present embodiment further provides a method for separating a bonding sheet, which is applied to the above-mentioned device for separating a bonding sheet, and the method for separating a bonding sheet includes the following steps:
s10, placing the bonding sheet on the support table 2 in the separation cavity 11, and placing the support substrate 100 close to the support table 2.
And S20, moving the pressing rod 3 until the pressing head 31 moves to be abutted against the residual material substrate 201, and applying a set pressure to the residual material substrate 201 by the pressing head 31 and cooling.
When the pressing rod 3 is moved, when the pressing head 31 is close to the bonding piece, the moving speed of the pressing rod 3 is gradually reduced, so that the pressing head 31 is slowly abutted against the piezoelectric material substrate 200, and the piezoelectric material substrate 200 is prevented from being damaged.
Specifically, the pressure is set to 0N-100N. The pressure sensor is used for detecting the pressure of the pressure head 31, and the control unit controls the pressure regulator according to the detected pressure, so that the pressure of the pressure head 31 to the bonding sheet is kept between 0N and 100N.
At the same time, the circulating coolant in the first cooling line in the head 31 and the circulating coolant in the second cooling line in the separator 1 start to circulate to achieve control of the temperature of the piezoelectric material substrate 200.
S30, vacuumizing the separation cavity 11 through the vacuumizing hole, and then introducing inert gas to keep the air pressure in the separation cavity 11 at a first set air pressure state.
In this embodiment, the vacuum device evacuates the inside of the separation chamber 11 through the evacuation port to evacuate the air in the separation chamber 11. The inert gas source then fills the separation chamber 11 with inert gas through the fill port. Of course, in other embodiments, the inert gas may be directly introduced into the separation chamber 11 through the inert gas source under normal pressure to protect the bonding sheet from being separated by heating.
Specifically, the first set air pressure state is: 0mBar to 50mBar. The air pressure state in the separation chamber 11 is detected by a vacuum gauge so that the pressure state in the separation chamber 11 is a first set air pressure state, and the first set air pressure state is 0mBar-50mBar.
S40, starting the heater 4, heating the supporting table 2 to 200-300 ℃, controlling the temperature of the residual material substrate 201 at 150-200 ℃, and separating the residual material substrate 201 from the film layer 202 after the set time is kept.
The temperature sensor is used for detecting the heating temperature of the supporting table 2 and sending the detected heating temperature to the control unit, and the control unit controls the heating power and the heating time of the heater 4.
Illustratively, the support table 2 is heated to 250deg.C with a heating rate controlled between 5 deg.C/min and 50 deg.C/min, preferably 10 deg.C/min.
Specifically, the set time is 0.5h-10h. In this process, the heat of the support table 2 is gradually transferred to the support substrate 100, and transferred from the support substrate 100 to the piezoelectric material substrate 200, so that the thin film layer 202 is separated from the remainder substrate 201.
S50, stopping heating by the heater 4, and waiting for the temperature of the supporting table 2 to be reduced below 50 ℃.
After the thin film layer 202 is separated from the remainder substrate 201, the control unit controls the heater 4 to stop heating, and when the temperature sensor detects that the temperature of the support table 2 falls below 50 ℃, a signal is sent to the control unit.
S60, inflating the separation cavity 11 to a second set air pressure state through the inflation inlet.
The control unit receives the signal that the temperature of the supporting table 2 is reduced to below 50 ℃ and then gives a prompt, and the staff fills air into the separation cavity 11 through the air filling opening.
Specifically, the second set air pressure state is: 900mBar to 1000mBar.
S70, taking out the separated bonding sheet.
After the bonding sheet is separated into the piezoelectric composite substrate and the residual substrate 201, the residual substrate 201 is removed by mechanochemical polishing to remove 0.2um-0.3um (roughness Ra is less than or equal to 0.2 nm), and then repeated use can be carried out for a plurality of times. The total thickness of the piezoelectric material substrate 200 is about 350um to 500um, the thickness of single use is about 1um to 2um, and when the thickness of the piezoelectric material substrate 200 is 200um, the piezoelectric material substrate cannot be used continuously due to the fact that the warpage and deformation are too large. Therefore, the separation method of the bonding sheet provided in this embodiment can realize the recycling of the piezoelectric material substrate 200 with a thickness of 150um-300 um.
The bonding sheet separation method provided by the invention is applied to the bonding sheet separation device. The bonding sheet is placed on the supporting table 2 in the separation cavity 11, the pressure head 31 applies set pressure to the bonding sheet, the pressure head 31 can cool the residual material substrate 201 close to the bonding sheet, after the heater 4 is started, the supporting table 2 is heated to 200-300 ℃, at the moment, the temperature of the residual material substrate 201 is controlled to 150-200 ℃, after the set time is kept, the separation of the residual material substrate 201 and the film layer 202 is realized, then the heating is stopped, and after the temperature of the supporting table 2 is reduced to 50 ℃, the separated bonding sheet is taken out, so that the waste of the piezoelectric material substrate 200 is avoided, the process steps are not required to be increased, the process time is shortened, and the cost is reduced.
The foregoing is merely exemplary of the present invention, and those skilled in the art should not be considered as limiting the invention, since modifications may be made in the specific embodiments and application scope of the invention in light of the teachings of the present invention.
Claims (16)
1. Bonding sheet separating device, bonding sheet includes supporting substrate (100) and piezoelectricity material substrate (200), piezoelectricity material substrate (200) include clout substrate (201) and thin film layer (202), thin film layer (202) are located supporting substrate (100) with clout substrate (201), bonding sheet separating device is used for with clout substrate (201) with thin film layer (202) separation, characterized in that, bonding sheet separating device includes:
a separator (1) having a separation chamber (11) therein;
the supporting table (2) is arranged in the separation cavity (11), a heater (4) is arranged in the supporting table (2), and the supporting table (2) is used for supporting the bonding sheet and heating the bonding sheet;
the pressure bar (3), mobilizable set up in on the separator (1), pressure bar (3) include pressure head (31), pressure head (31) with brace table (2) set up relatively, just pressure head (31) have the cooling function, pressure bar (3) can move to pressure head (31) with clout substrate (201) butt, pressure head (31) are used for right clout substrate (201) are exerted pressure and are cooled.
2. The bonding sheet separating device according to claim 1, wherein a first cooling line is provided in the ram (31), and a circulating coolant in the first cooling line is used for cooling the remainder substrate (201).
3. The bonding sheet separating device according to claim 1, wherein a second cooling line is provided in a side wall of the separator (1), and circulating coolant in the second cooling line is used for cooling the separation chamber (11).
4. The bonding sheet separating device according to claim 1, wherein the support table (2) is provided with a heat insulating layer (5) at the outer periphery thereof.
5. The bonding sheet separation device according to claim 4, wherein the insulating layer (5) is made of graphite felt.
6. The bonding sheet separating device according to claim 1, wherein a temperature sensor is further provided in the support table (2), the temperature sensor being for detecting the temperature of the support table (2).
7. The bonding sheet separating device according to claim 1, wherein a pressure sensor is provided in the indenter (31) for detecting a pressure applied to the remainder substrate (201) by the indenter (31).
8. The bonding sheet separating device according to any one of claims 1 to 7, characterized in that at least one pumping port is provided on the separator (1), which pumping port communicates with the separating chamber (11), and through which pumping port the separating chamber (11) is pumped.
9. The bonding sheet separating device according to any one of claims 1 to 7, wherein a vacuum gauge is provided on the separator (1) for detecting the gas pressure in the separating chamber (11).
10. A method of separating a bonding sheet, characterized by being applied to the bonding sheet separating device according to any one of claims 1 to 9, comprising the steps of:
placing the bonding sheet on the support table (2) in the separation chamber (11), the support substrate (100) being placed close to the support table (2);
moving the pressing rod (3) until the pressing head (31) moves to be abutted against the residual material substrate (201), and the pressing head (31) applies set pressure to the residual material substrate (201) and cools;
starting the heater (4), heating the supporting table (2) to 200-300 ℃, controlling the temperature of the residual material substrate (201) at 150-200 ℃, and separating the residual material substrate (201) from the film layer (202) after a set time is kept;
the heater (4) stops heating and waits for the supporting table (2) to be cooled to below 50 ℃;
and taking out the separated bonding sheet.
11. The method of separating bonding sheets according to claim 10, characterized in that the separator (1) is provided with at least one pumping port, further comprising the following steps, before the step of activating the heater (4):
and vacuumizing the separation cavity (11) through the vacuumizing hole, and then introducing inert gas to keep the air pressure in the separation cavity (11) in a first set air pressure state.
12. The method of separating bonding sheets according to claim 11, wherein after the support table (2) is cooled to 50 ℃ or lower, the separation chamber (11) is inflated to a second set air pressure state through the inflation port.
13. The method of separating bonding sheets according to claim 10, wherein the set pressure is 0N to 100N.
14. The method of separating bonding sheets according to claim 10, wherein the set time is 0.5h to 10h.
15. The method of separating a bonding pad according to claim 11, wherein the first set air pressure state is: 0mBar to 50mBar.
16. The method of separating a bonding pad according to claim 12, wherein the second set air pressure state is: 900mBar to 1000mBar.
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