CN116759440A - Structure and method for reducing self-doping effect of barrel type epitaxial furnace and anti-single particle bipolar triode - Google Patents

Structure and method for reducing self-doping effect of barrel type epitaxial furnace and anti-single particle bipolar triode Download PDF

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Publication number
CN116759440A
CN116759440A CN202310722339.1A CN202310722339A CN116759440A CN 116759440 A CN116759440 A CN 116759440A CN 202310722339 A CN202310722339 A CN 202310722339A CN 116759440 A CN116759440 A CN 116759440A
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epitaxial layer
epitaxial
furnace
substrate material
self
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刘依思
任永宁
折宇
葛洪磊
李钊
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Xian Microelectronics Technology Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

The invention discloses a structure and a method for reducing self-doping effect of a barrel epitaxial furnace and an anti-single particle bipolar triode, and belongs to the field of semiconductor integrated circuits. Firstly, putting a heavily doped low-resistance silicon substrate material into a barrel type epitaxial furnace, and performing epitaxial growth on the surface of the silicon substrate material to form a first epitaxial layer, wherein the epitaxial layer comprises a thinner epitaxial intrinsic layer, the thickness of the first epitaxial layer after growth is smaller than the set total thickness of the epitaxial layer, and then, on the basis of the first epitaxial layer, starting second epitaxial growth after cavity opening, and growing to the set total thickness of the epitaxial layer. Through the operation steps, after the heavily doped low-resistance silicon substrate material grows and seals the first pre-deposited intrinsic layer, impurities in the stagnation layer in the epitaxial system can be taken away by means of a cavity opening and furnace dividing method, the purpose of greatly reducing the self-doping effect in the epitaxial furnace system is achieved, and meanwhile the single-furnace productivity can be improved.

Description

Structure and method for reducing self-doping effect of barrel type epitaxial furnace and anti-single particle bipolar triode
Technical Field
The invention belongs to the technical field of semiconductor integrated circuits, and relates to a structure and a method for reducing self-doping effect of a barrel epitaxial furnace and a single particle resistant bipolar triode.
Background
The barrel type epitaxial furnace heated by infrared radiation is adopted in the industry, because the temperature of the silicon wafer is higher than that of the susceptor due to the heating mode, when silicon and impurity atoms on the back surface of the silicon are transferred to the susceptor in the epitaxial process, self-doping is easy to generate, the silicon wafer is borne on the section of the susceptor, and as shown in figure 1, a stagnation layer formed by the structure is more easy to aggravate the self-doping effect among the silicon wafers; the high-resistance thick epitaxy process of the anti-single particle bipolar triode product adopts 0.001-0.002 (omega cm) of heavily doped low-resistance substrate material, the substrate has high impurity concentration and high saturated vapor pressure of arsenic, and the self-doping effect caused by the overflow of the heavily doped substrate impurity can be more obvious in the high-temperature process of one-furnace multi-plate simultaneous deposition of a barrel type epitaxial furnace. Both of which greatly increase the difficulty of precise control of the resistivity of the epitaxial layer.
Therefore, in order to reduce the influence of the self-doping effect, each barrel-type epitaxial furnace only works for 1-2 pieces (15 pieces can be placed on the 5 faces of the three-layer base, as shown in fig. 2), the whole batch of 24 pieces is normally completed, 12 times of heating are needed, and the single-furnace productivity is low; meanwhile, the heavily doped substrate slice is affected by the self-doping effect, so that the resistivity slice of the epitaxial layer is poor in uniformity, and the uniformity in the slice is about 7.0%.
Disclosure of Invention
The invention aims to solve the problems that in the prior art, uniformity of an epitaxial layer resistivity sheet in a barrel-type epitaxial furnace cannot be effectively controlled due to self-doping effect and single-furnace productivity is low, and provides a structure and a method for reducing the self-doping effect of the barrel-type epitaxial furnace and a single-particle-resistant bipolar triode.
In order to achieve the purpose, the invention is realized by adopting the following technical scheme:
the invention provides a structure for reducing self-doping effect of a barrel-type epitaxial furnace, which comprises a substrate material, a first epitaxial layer and a second epitaxial layer;
the substrate material, the first epitaxial layer and the second epitaxial layer are all positioned in a barrel-type epitaxial furnace, the substrate material is arranged on the bottom surface of the barrel-type epitaxial furnace, the first epitaxial layer is positioned on the upper surface of the substrate material, and the second epitaxial layer is positioned on the upper surface of the first epitaxial layer; an intrinsic epitaxial layer is arranged in the first epitaxial layer, and the intrinsic epitaxial layer is positioned on the lower bottom surface of the first epitaxial layer.
Preferably, the substrate material is a monocrystalline heavily doped low resistance silicon substrate sheet.
Preferably, the thickness of the first epitaxial layer is smaller than the thickness of the second epitaxial layer;
the substrate material, the first epitaxial layer and the second epitaxial layer are equal in end face size.
The invention provides a single particle resistant bipolar triode, which adopts a structure for reducing the self-doping effect of a barrel type epitaxial furnace.
The invention provides a method for reducing self-doping effect of a barrel-type epitaxial furnace, which comprises the following steps:
carrying out epitaxial layer deposition on a substrate material to obtain a first epitaxial layer, and carrying out planarization treatment on the first epitaxial layer; wherein the first epitaxial layer comprises an intrinsic epitaxial layer;
and (3) opening a cavity on the basis of the first epitaxial layer to obtain a second epitaxial layer, and flattening the second epitaxial layer, so that the self-doping effect of the barrel-type epitaxial furnace is reduced.
Preferably, the surface of the substrate material is treated prior to epitaxial layer deposition of the substrate material.
Preferably, the substrate material is surface treated with one or more of SC1, SC2, dilute hydrofluoric acid or SPM solutions.
Preferably, the thickness of the first epitaxial layer is 3 μm to 4 μm, and the resistivity of the first epitaxial layer is 0.1 Ω.cm to 0.5 Ω.cm.
Preferably, the intrinsic epitaxial layer has a thickness of 0.5 μm to 1.0 μm.
Preferably, the thickness of the second epitaxial layer is 18 μm to 20 μm, and the resistivity of the second epitaxial layer is 16.0 Ω.cm to 20.0 Ω.cm.
Compared with the prior art, the invention has the following beneficial effects:
according to the structure for reducing the self-doping effect of the barrel-type epitaxial furnace, before the first layer of epitaxy is grown on a substrate material, a thin intrinsic layer is preferentially grown, the structure can be used for inhibiting impurity overflow of a heavily doped substrate, after the first layer of epitaxy is grown, next, the epitaxial furnace is combined with a furnace-opening mode of the epitaxial furnace, and the second layer of epitaxy is grown. The growth sequence and the epitaxial layer structure are arranged, impurities in a stagnation layer in an epitaxial system can be taken away, the self-doping effect can be solved, the uniformity of the epitaxial resistivity is effectively controlled, and the single-furnace productivity of the epitaxial furnace is improved. If the setting and growing method of the current structure is not adopted, all epitaxial layers are directly grown on the heavily doped substrate material at one time, and an autodoping effect can be generated, so that the substrate impurity is seriously overflowed, the resistivity uniformity of the epitaxial layers is poor, and the single-furnace productivity is low.
The invention provides a method for reducing self-doping effect of a barrel type epitaxial furnace, which is characterized in that a substrate material is placed in the barrel type epitaxial furnace, and epitaxial growth is carried out on the surface of a silicon substrate to form a first epitaxial layer, wherein the epitaxial layer comprises a thinner intrinsic epitaxial layer, and then, on the basis of the first epitaxial layer, the second epitaxial growth is started after cavity opening, and the epitaxial layer grows to the preset total thickness of the epitaxial layer. Through the operation steps, after the substrate material grows and seals the first pre-deposited intrinsic layer, impurities in the stagnation layer in the epitaxial system can be taken away by means of a cavity opening and furnace dividing method, so that the self-doping effect in the epitaxial furnace system is greatly reduced, and the single-furnace productivity of the general epitaxial furnace can be improved. Therefore, the method provided by the invention is used for sealing the heavily doped substrate impurities by pre-depositing a thin intrinsic epitaxial layer, and taking away the impurities of the stagnation layer in the epitaxial system by combining a furnace splitting mode, so that the problems that the resistivity sheet uniformity of the epitaxial layer cannot be controlled and the single-furnace productivity of the epitaxial furnace is low due to the self-doping effect of the heavily doped substrate sheet in the barrel-type epitaxial furnace can be effectively solved.
Further, the surface of the substrate material is treated before epitaxial growth, and an oxide layer on the surface of the substrate material is removed.
Further, the thickness of the intrinsic epitaxial layer is 0.5 μm to 1.0 μm, and if the intrinsic epitaxial layer is too thin (less than 0.5 μm), the substrate impurities are not completely enclosed, so that the resistivity data of the first epitaxial layer cannot be precisely controlled.
Drawings
For a clearer description of the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a diagram of a prior art gas model for epitaxial deposition in a barrel epitaxial furnace.
Fig. 2 is a diagram of a three-layer susceptor for a barrel-type epitaxial furnace in the prior art.
Fig. 3 is a schematic diagram of a split-furnace epitaxial layer structure of the present invention.
FIG. 4 is a schematic diagram of a structure of a substrate material inspection position obtained by growth according to an embodiment of the present invention.
Wherein: 1-substrate material, 2-first epitaxial layer, 3-second epitaxial layer, 4-intrinsic epitaxial layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the embodiments of the present invention, it should be noted that, if the terms "upper," "lower," "horizontal," "inner," and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and does not indicate or imply that the apparatus or element to be referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the term "horizontal" if present does not mean that the component is required to be absolutely horizontal, but may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the embodiments of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" should be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The invention is described in further detail below with reference to the attached drawing figures:
the structure for reducing the self-doping effect of the barrel type epitaxial furnace provided by the invention, as shown in fig. 3, comprises a substrate material 1, a first epitaxial layer 2 and a second epitaxial layer 3, wherein the substrate material 1, the first epitaxial layer 2 and the second epitaxial layer 3 are all positioned in the barrel type epitaxial furnace, the substrate material 1 is arranged on the bottom surface of the barrel type epitaxial furnace, the first epitaxial layer 2 is positioned on the upper surface of the substrate material 1, and the second epitaxial layer 3 is positioned on the upper surface of the first epitaxial layer 2; an intrinsic epitaxial layer 4 is provided in the first epitaxial layer 2, and the intrinsic epitaxial layer 4 is located on the lower bottom surface of the first epitaxial layer 2.
Wherein the thickness of the first epitaxial layer 2 is smaller than the thickness of the second epitaxial layer 3. The substrate material 1 is a monocrystalline heavily doped low-resistance silicon substrate sheet, the resistivity of which is 0.001-0.002 omega cm, and the loss of the power device can be reduced.
The end surfaces of the substrate material 1, the first epitaxial layer 2 and the second epitaxial layer 3 are equal in size, and the obtained structure can be loaded into a barrel epitaxial furnace.
The invention provides a method for reducing self-doping effect of a barrel-type epitaxial furnace, which comprises the following steps:
step 1, carrying out epitaxial layer deposition on a substrate material 1 to obtain a first epitaxial layer 2, wherein the first epitaxial layer 2 comprises an intrinsic epitaxial layer 4, and carrying out planarization treatment on the first epitaxial layer 2;
the thickness of the first epitaxial layer 2 is 3 μm to 4 μm, the thickness of the intrinsic epitaxial layer 4 is 0.5 μm to 1.0 μm, and the resistivity of the first epitaxial layer 2 is 0.3 Ω cm.
And 2, opening a cavity on the basis of the first epitaxial layer 2 to obtain a second epitaxial layer 3, and flattening the second epitaxial layer 3.
The thickness of the second epitaxial layer 3 was 20 μm, and the resistivity of the second epitaxial layer 3 was 20.0 Ω·cm.
Finally, an epitaxial layer structure of the silicon substrate is formed, as shown in fig. 3.
The current method is adopted to grow the heavily doped silicon substrate, the silicon substrate after the epitaxial layer is grown by the method and the silicon substrate after the silicon substrate is grown by the current method are respectively subjected to point taking detection, the positions of measuring points of the square resistance sample wafer along with the furnace are shown in fig. 4, and the test results are shown in table 2.
The process control method of the present invention will now be further described with reference to examples.
Example 1
The invention discloses a method for controlling a split-furnace open-cavity intrinsic two-step process, which is applied to a single-particle-resistant bipolar triode product which grows high-resistance thick epitaxy on a barrel-type epitaxial furnace aiming at using a heavily doped substrate material silicon wafer of 0.002 ohm cm. The epitaxial layer structure and the slice placing mode are as follows:
the first epitaxial layer has a thickness of 4 μm and a resistivity of 0.3 Ω. Cm, and comprises an intrinsic epitaxial layer of 0.9 μm;
the second epitaxial layer had a thickness of 20 μm and a resistivity of 18. Omega. Cm.
Example 2
The invention discloses a method for controlling a split-furnace open-cavity intrinsic two-step process, which is applied to a single-particle-resistant bipolar triode product which grows high-resistance thick epitaxy on a barrel-type epitaxial furnace aiming at using a heavily doped substrate material silicon wafer of 0.001 omega cm. The epitaxial layer structure and the slice placing mode are as follows:
the first epitaxial layer has a thickness of 3 μm and a resistivity of 0.1 Ω. Cm, and comprises a 0.5 μm intrinsic epitaxial layer;
the second epitaxial layer had a thickness of 18 μm and a resistivity of 16. Omega. Cm.
Example 3
The invention discloses a method for controlling a split-furnace open-cavity intrinsic two-step process, which is applied to a single-particle-resistant bipolar triode product which grows high-resistance thick epitaxy on a barrel-type epitaxial furnace aiming at using a heavily doped substrate material silicon wafer of 0.001 omega cm. The epitaxial layer structure and the slice placing mode are as follows:
the first epitaxial layer has a thickness of 3 μm and a resistivity of 0.3 Ω cm and comprises a 0.7 μm intrinsic epitaxial layer;
the second epitaxial layer had a thickness of 19 μm and a resistivity of 18. Omega. Cm.
Example 4
The invention discloses a method for controlling a split-furnace open-cavity intrinsic two-step process, which is applied to a single-particle-resistant bipolar triode product which grows high-resistance thick epitaxy on a barrel-type epitaxial furnace aiming at using a heavily doped substrate material silicon wafer of 0.002 ohm cm. The epitaxial layer structure and the slice placing mode are as follows:
the first epitaxial layer has a thickness of 4 μm and a resistivity of 0.5 Ω. Cm, and comprises a 1.0 μm intrinsic epitaxial layer;
the second epitaxial layer had a thickness of 20 μm and a resistivity of 20Ω·cm.
The method solves the problem of self-doping effect brought by heavily doping the substrate slice in the barrel-type epitaxial furnace. Through the operation steps, after the intrinsic epitaxial layer 4 of the first epitaxial layer 2 is sealed, impurities in the retention layer in the epitaxial system can be taken away by a cavity opening and furnace dividing method, so that the purpose of greatly reducing the self-doping effect in the epitaxial furnace system is achieved. The whole batch of 24 sheets is completed by the method only needs to be divided into 4 times, the yield of an epitaxial single furnace is improved by 67%, and the uniformity in the epitaxial layer resistivity sheet can be stably controlled within 2.0%. The comparative effects are shown in tables 1 and 2 below:
table 1 comparison of conventional and inventive methods
Table 2 comparison of inventive and conventional methods-epitaxial resistivity and on-chip uniformity
As can be seen from tables 1, 2 and FIG. 4, the uniformity in the resistivity sheet grown by the method of the present invention was within 2%. By adopting a conventional high-resistance thick epitaxy process, the resistivity in the sheet has large discreteness and uniformity of more than 7%, and the single-furnace productivity of an epitaxial furnace is low; the uniformity in the resistivity sheet is improved from 7% to 2%, the single-furnace productivity of the epitaxial furnace is improved by 67%, and the single-furnace productivity of the epitaxial furnace is improved while the accurate control requirement of the single-particle-resistant bipolar triode product on the resistivity of the epitaxial layer is greatly improved.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. The structure for reducing the self-doping effect of the barrel-type epitaxial furnace is characterized by comprising a substrate material (1), a first epitaxial layer (2) and a second epitaxial layer (3);
the substrate material (1), the first epitaxial layer (2) and the second epitaxial layer (3) are all positioned in a barrel type epitaxial furnace, the substrate material (1) is arranged on the bottom surface of the barrel type epitaxial furnace, the first epitaxial layer (2) is positioned on the upper surface of the substrate material (1), and the second epitaxial layer (3) is positioned on the upper surface of the first epitaxial layer (2); an intrinsic epitaxial layer (4) is arranged in the first epitaxial layer (2), and the intrinsic epitaxial layer (4) is positioned on the lower bottom surface of the first epitaxial layer (2).
2. The structure for reducing the self-doping effect of the barrel epitaxial furnace according to claim 1, wherein the substrate material (1) is a monocrystalline heavily doped low resistance silicon substrate sheet.
3. Structure for reducing the self-doping effect of a tub epitaxial furnace according to claim 1, characterized in that the thickness of the first epitaxial layer (2) is smaller than the thickness of the second epitaxial layer (3);
the substrate material (1), the first epitaxial layer (2) and the second epitaxial layer (3) are equal in end face size.
4. A single particle resistant bipolar triode characterized in that a structure for reducing self-doping effect of a barrel epitaxial furnace as claimed in any one of claims 1 to 3 is adopted.
5. The method for reducing the self-doping effect of the barrel-type epitaxial furnace is characterized by comprising the following steps of:
carrying out epitaxial layer deposition on a substrate material (1) to obtain a first epitaxial layer (2), and carrying out planarization treatment on the first epitaxial layer (2); wherein the first epitaxial layer (2) comprises an intrinsic epitaxial layer (4);
and (3) obtaining a second epitaxial layer (3) after cavity opening is carried out on the basis of the first epitaxial layer (2), and carrying out planarization treatment on the second epitaxial layer (3), so that the self-doping effect of the barrel epitaxial furnace is reduced.
6. The method for reducing the self-doping effect of a tub epitaxial furnace according to claim 5, wherein the surface of the substrate material (1) is treated before the epitaxial layer deposition of the substrate material (1).
7. The method for reducing the self-doping effect of the tub epitaxial furnace according to claim 6, wherein the substrate material (1) is surface treated with one or more of SC1, SC2, dilute hydrofluoric acid or SPM solution.
8. The method for reducing the self-doping effect of the barrel epitaxial furnace according to claim 5, wherein the thickness of the first epitaxial layer (2) is 3-4 μm, and the resistivity of the first epitaxial layer (2) is 0.1-0.5 Ω.
9. Method for reducing the self-doping effect of a tub epitaxial furnace according to claim 5, characterized in that the intrinsic epitaxial layer (4) has a thickness of 0.5 μm to 1.0 μm.
10. The method for reducing the self-doping effect of the barrel epitaxial furnace according to claim 5, wherein the thickness of the second epitaxial layer (3) is 18-20 μm, and the resistivity of the second epitaxial layer (3) is 16.0-20.0 Ω cm.
CN202310722339.1A 2023-06-16 2023-06-16 Structure and method for reducing self-doping effect of barrel type epitaxial furnace and anti-single particle bipolar triode Pending CN116759440A (en)

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Application Number Priority Date Filing Date Title
CN202310722339.1A CN116759440A (en) 2023-06-16 2023-06-16 Structure and method for reducing self-doping effect of barrel type epitaxial furnace and anti-single particle bipolar triode

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