CN116752233A - Method for growing monocrystalline diamond based on heteroepitaxy - Google Patents
Method for growing monocrystalline diamond based on heteroepitaxy Download PDFInfo
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- CN116752233A CN116752233A CN202310724872.1A CN202310724872A CN116752233A CN 116752233 A CN116752233 A CN 116752233A CN 202310724872 A CN202310724872 A CN 202310724872A CN 116752233 A CN116752233 A CN 116752233A
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 60
- 239000010432 diamond Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000001534 heteroepitaxy Methods 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000013078 crystal Substances 0.000 claims abstract description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 230000006911 nucleation Effects 0.000 claims abstract description 8
- 238000010899 nucleation Methods 0.000 claims abstract description 8
- 230000008569 process Effects 0.000 claims abstract description 6
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000007704 transition Effects 0.000 claims abstract description 4
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 12
- 239000000463 material Substances 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a method for growing monocrystalline diamond based on heteroepitaxy, which comprises the steps of selecting a monocrystalline diamond substrate, and growing a first iridium metal layer on the heteroepitaxy substrate; epitaxially growing a monocrystalline seed layer on the processed substrate by using an epitaxial growth process as a buffer layer to generate a graphene layer on the upper surface of the monocrystalline diamond substrate; growing an AlN nucleation layer on the upper surface of the graphene layer, and growing a low-temperature GaN transition layer on the upper surface of the AlN nucleation layer; separating the diamond to obtain the single crystal diamond.
Description
Technical Field
The invention relates to the technical field of monocrystalline diamond, in particular to a method for growing monocrystalline diamond based on heteroepitaxy.
Background
At present, large-size monocrystalline diamond or quasi-monocrystalline diamond with highly consistent crystal orientation has irreplaceable key effects in high-tech fields such as precision machining, information communication, aerospace, tip technology and the like. However, at present, a high temperature High Pressure (HPHT) method is mostly adopted for preparing diamond, the prepared diamond contains more impurities, has high defect density, poor quality and smaller size, and the prepared diamond product is positioned at the downstream of an industrial chain and has low competitiveness.
The single crystal diamond has excellent electrical and optical properties, and has wide application prospect in the aspects of semiconductor devices such as high-power electronic devices, high-frequency high-power microwave devices and the like. However, the conventional diamond adopts a homoepitaxy method to grow single crystal diamond, and the method for growing single crystal diamond needs to use diamond as an epitaxial substrate, so that the diamond substrate has high price and limited size, and is not beneficial to large-scale application of diamond devices. Heteroepitaxial growth is also challenging due to the large lattice mismatch between diamond and the heteroepitaxial substrate.
Disclosure of Invention
First, the technical problem to be solved
In order to overcome the defects in the prior art, a method for growing monocrystalline diamond based on heteroepitaxy is provided so as to solve the problems in the background art.
(II) technical scheme
The invention is realized by the following technical scheme: the invention provides a method for growing monocrystalline diamond based on heteroepitaxy, which is characterized by comprising the following steps: the method comprises the following steps:
s1: selecting a monocrystalline diamond substrate, and growing a first iridium metal layer on the heteroepitaxial substrate;
s2: epitaxially growing a monocrystalline seed layer on the treated substrate by using an epitaxial growth process to serve as a buffer layer;
s3: generating a graphene layer on the upper surface of the monocrystalline diamond substrate;
s4: growing an AlN nucleation layer on the upper surface of the graphene layer, and growing a low-temperature GaN transition layer on the upper surface of the AlN nucleation layer;
s5: separating the diamond to obtain the single crystal diamond.
Further, the heteroepitaxial substrate is Si, mgO, al O3 or SrTiO3.
Further, a graphene layer with the thickness of 0.2-0.4nm is grown on the metal substrate.
Further, the metal substrate covered with the graphene layer is subjected to chemical etching, and the metal substrate is removed.
Further, the graphene layer is transferred onto the single crystal diamond substrate, resulting in a single crystal diamond substrate covered with the graphene layer.
(III) beneficial effects
Compared with the prior art, the invention has the following beneficial effects:
according to the method for growing monocrystalline diamond based on heteroepitaxy, a layer of graphene is transferred on the monocrystalline diamond substrate, and the GaN layer is grown on the graphene layer, so that the stress between the substrate and the GaN layer is reduced, the method for growing GaN/AlGaN heterojunction material on the monocrystalline diamond substrate with any crystal face is provided, the limitation of epitaxial gallium nitride material on the diamond on the crystal face of the substrate is broken through, the process difficulty is simplified, and the growth of the gallium nitride heterojunction material with large area and high heat dissipation efficiency is realized.
The invention designs and prepares a lamination capable of heteroepitaxially growing large-size single crystal diamond, in particular, a TiN single crystal seed layer is inserted into the lamination as an epitaxial template and a transitional buffer layer, so that the orientation consistency and the growth quality of the crystal directions of oxide and the epitaxial layer of the whole substrate are improved, and the possibility of growing high-quality large-size single crystal diamond is provided.
Detailed Description
The present invention will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The invention provides a method for growing monocrystalline diamond based on heteroepitaxy, which is characterized by comprising the following steps: the method comprises the following steps:
s1: selecting a monocrystalline diamond substrate, and growing a first iridium metal layer on the heteroepitaxial substrate;
s2: epitaxially growing a monocrystalline seed layer on the treated substrate by using an epitaxial growth process to serve as a buffer layer;
s3: generating a graphene layer on the upper surface of the monocrystalline diamond substrate;
s4: growing an AlN nucleation layer on the upper surface of the graphene layer, and growing a low-temperature GaN transition layer on the upper surface of the AlN nucleation layer;
s5: separating the diamond to obtain the single crystal diamond.
Further, the heteroepitaxial substrate is Si, mgO, al O3 or SrTiO3.
Further, a graphene layer with the thickness of 0.2-0.4nm is grown on the metal substrate.
Further, the metal substrate covered with the graphene layer is subjected to chemical etching, and the metal substrate is removed.
Further, the graphene layer is transferred onto the single crystal diamond substrate, resulting in a single crystal diamond substrate covered with the graphene layer.
According to the method for growing monocrystalline diamond based on heteroepitaxy, a layer of graphene is transferred on the monocrystalline diamond substrate, and the GaN layer is grown on the graphene layer, so that the stress between the substrate and the GaN layer is reduced, the method for growing GaN/AlGaN heterojunction material on the monocrystalline diamond substrate with any crystal face is provided, the limitation of epitaxial gallium nitride material on the diamond on the crystal face of the substrate is broken through, the process difficulty is simplified, and the growth of the gallium nitride heterojunction material with large area and high heat dissipation efficiency is realized.
The invention designs and prepares a lamination capable of heteroepitaxially growing large-size single crystal diamond, in particular, a TiN single crystal seed layer is inserted into the lamination as an epitaxial template and a transitional buffer layer, so that the orientation consistency and the growth quality of the crystal directions of oxide and the epitaxial layer of the whole substrate are improved, and the possibility of growing high-quality large-size single crystal diamond is provided.
The above examples are merely illustrative of the preferred embodiments of the present invention and are not intended to limit the spirit and scope of the present invention. Various modifications and improvements of the technical scheme of the present invention will fall within the protection scope of the present invention without departing from the design concept of the present invention, and the technical content of the present invention is fully described in the claims.
Claims (5)
1. A method for heteroepitaxially growing single crystal diamond, characterized by: the method comprises the following steps:
s1: selecting a monocrystalline diamond substrate, and growing a first iridium metal layer on the heteroepitaxial substrate;
s2: epitaxially growing a monocrystalline seed layer on the treated substrate by using an epitaxial growth process to serve as a buffer layer;
s3: generating a graphene layer on the upper surface of the monocrystalline diamond substrate;
s4: growing an AlN nucleation layer on the upper surface of the graphene layer, and growing a low-temperature GaN transition layer on the upper surface of the AlN nucleation layer;
s5: separating the diamond to obtain the single crystal diamond.
2. A method of heteroepitaxially growing single crystal diamond according to claim 1, wherein: the heteroepitaxial substrate is Si, mgO, al2O3 or SrTiO3.
3. A method of heteroepitaxially growing single crystal diamond according to claim 1, wherein: and growing a graphene layer with the thickness of 0.2-0.4nm on the metal substrate.
4. A method of heteroepitaxially growing single crystal diamond according to claim 1, wherein: and chemically etching the metal substrate covered with the graphene layer to remove the metal substrate.
5. A method of heteroepitaxially growing single crystal diamond according to claim 1, wherein: and transferring the graphene layer onto the monocrystalline diamond substrate to obtain the monocrystalline diamond substrate covered with the graphene layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310724872.1A CN116752233A (en) | 2023-06-19 | 2023-06-19 | Method for growing monocrystalline diamond based on heteroepitaxy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310724872.1A CN116752233A (en) | 2023-06-19 | 2023-06-19 | Method for growing monocrystalline diamond based on heteroepitaxy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116752233A true CN116752233A (en) | 2023-09-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310724872.1A Pending CN116752233A (en) | 2023-06-19 | 2023-06-19 | Method for growing monocrystalline diamond based on heteroepitaxy |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116752233A (en) |
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2023
- 2023-06-19 CN CN202310724872.1A patent/CN116752233A/en active Pending
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