CN116743107A

CN116743107A - MEMS planar resonator and preparation method thereof

Info

Publication number: CN116743107A
Application number: CN202310563075.XA
Authority: CN
Inventors: 尚金堂; 罗斌
Original assignee: Southeast University
Current assignee: Southeast University
Priority date: 2023-05-18
Filing date: 2023-05-18
Publication date: 2023-09-12

Abstract

The application discloses a MEMS planar resonator and a preparation method thereof. The MEMS plane resonator consists of a vibrating beam, a bridge, an flying wing, legs, a tail wing and a substrate with a cavity; the bridge is connected with two rectangular flying wings, the vibrating beam is isolated from the flying wings by strip-shaped holes, the edge of each flying wing is connected with the edge of the rectangular tail wing by legs, the rectangular holes are formed in the two flying wings, the two legs and the tail wing, and the peripheries of the flying wings, the bridge, the legs and the tail wing form a large rectangle; a part of the tail fin is connected with the substrate with the chamber through bonding to form a whole; the vibration beam, the bridge, the flying wing, the leg and the tail wing are not bonded on the substrate to form a suspended vibration part of the MEMS plane resonator. Such MEMS planar resonators offer a high Q solution.

Description

MEMS planar resonator and preparation method thereof

Technical Field

The application belongs to the field of micro-electromechanical systems, and particularly relates to a MEMS planar resonator and a preparation method thereof.

Background

The development of micro-electro-mechanical system (MEMS) technology has led to miniaturization and microminiaturization of many macroscopic devices, which brings advantages of small volume, low cost, low power consumption, and the like, and also develops many new devices. MEMS resonators are typically fabricated by bulk micromachining techniques or surface micromachining techniques, and are used in sensors or actuators where the Q-value of the MEMS resonator has a large impact on the performance of the device, and therefore it is often desirable to maximize the Q-value.

In order to realize the conduction of the MEMS resonator, the surface of the resonator needs to be metallized when the resonator material is not conductive, and the metal conductive layer can introduce additional energy loss to reduce the Q value of the resonator. Particularly in recent years, research into quartz glass case resonators has been greatly emerging, and the Q value of the conductive layer of three-dimensional quartz glass case resonators has been greatly reduced. Therefore, there is a need for a high Q resonator that can evaluate the energy loss of a 10nm thick metal conductive layer, and select the appropriate metal type and metal film processing process. In 1975, b.s.berry et al measured metal internal consumption using a quartz glass ribbon resonator; in 2010, a.d. feffer man et al measured the internal consumption of metal at low temperatures using a silicon torsional resonator proposed by a.n. kleiman et al in 1985. Currently, the Q value of these resonators is usually between fifty thousand and twenty thousand at room temperature, the measured film thickness is mostly in the order of 100nm, and it is difficult to meet the evaluation requirement of the metal conductive layer with the thickness of 10nm, and a planar resonator with a higher Q value is needed.

Disclosure of Invention

The application aims to provide an MEMS planar resonator and a preparation method thereof, which are used for solving the technical problem that the existing resonator is difficult to meet the evaluation requirement of a metal conducting layer with the thickness of 10 nm.

In order to solve the technical problems, the specific technical scheme of the application is as follows:

the MEMS plane resonator is characterized by comprising a vibrating beam, a bridge, flying wings, legs and tail wings, wherein the vibrating beam is connected with the middle of the bridge, the bridge is connected with the upper edges of two rectangular flying wings, the vibrating beam and the flying wings are isolated by strip-shaped holes, the edge of each flying wing is connected with the edge of the rectangular tail wing through a leg, rectangular holes are formed in the two flying wings, the two legs and the tail wings, and the peripheries of the flying wings, the bridge, the legs and the tail wings form a large rectangle; a part of the tail fin is connected with the substrate with the chamber through bonding to form a whole; the vibration beam, the bridge, the flying wing, the leg and the tail wing are not bonded on the substrate to form a suspended vibration part of the MEMS plane resonator.

Further, the included angle between the side wall of the suspended vibration part of the MEMS planar resonator and the surface of the suspended vibration part of the MEMS planar resonator is 80-90 degrees.

Further, the vibration beam, the bridge, the flying wing, the leg and the tail wing are made of the same materials.

Further, the vibration beam, the bridge, the flying wing, the leg and the tail wing are made of one of III-V semiconductor materials and IV semiconductor materials.

Further, the substrate is prepared from one or more of a silicon-based wafer, a compound semiconductor wafer, a third generation semiconductor wafer, an optical wafer, or other substrate wafers.

The application also discloses a preparation method of the MEMS planar resonator, which comprises the following steps:

step one, processing a chamber on a substrate wafer through wet etching or dry etching;

step two, realizing connection of the structural wafer and the substrate wafer through a low-temperature bonding technology;

step three, processing one or more layers of protective films on the structural wafer through one or more of sputtering, electron beam evaporation, low-pressure chemical vapor deposition, plasma enhanced chemical vapor deposition and electroplating;

step four, forming a window on the structural wafer through spin coating photoresist, photoetching and developing;

step five, processing a suspended vibration part of the MEMS planar resonator by utilizing one or more of wet etching, dry etching, laser cutting, laser induced etching and combined laser cutting and chemical etching means;

and step six, removing the photoresist and the protective film after dicing the wafer, and cleaning to obtain the MEMS planar resonator.

Further, the protective film in the third step is an anti-corrosion film formed by one or more films of polysilicon, amorphous silicon, silicon nitride, cr/Au/Cr/Au, polysilicon/Cr/Au, amorphous silicon/SiC, cr/Au/Ni and metal simple substances. By/is meant that Cr has Au thereon, cr/Au/Cr/Au means that the lowest Cr, the upper layer is Au, the upper layer is further Cr, and the uppermost layer is Au.

Further, the substrate wafer is prepared from one or more of a silicon-based wafer, a compound semiconductor wafer, a third generation semiconductor wafer, an optical wafer or other substrate wafers.

Further, the structural wafer is one of a III-V semiconductor material and a IV semiconductor material.

Further, the laser in the fifth step is a femto-second laser or a pico-second laser.

The MEMS planar resonator and the preparation method thereof have the following advantages:

1. when the vibration beam generates out-of-plane vibration, strain energy is concentrated at the joint of the vibration beam and the bridge, and energy leaks to the substrate and needs to pass through the flying wing, the leg and the tail wing. The legs are thin and long, so that most of energy is isolated, the influence of anchor zone loss is restrained, and the realization of high Q value is facilitated.

2. The thickness of the MEMS plane resonator is the thickness of a structural wafer, and when the vibration beam generates out-of-plane vibration, the limiting effect of the surface loss on the Q value is not obvious due to the larger thickness; by selecting proper materials, the influence of thermoelastic damping on the Q value can be avoided by a larger thickness, and the high Q value is realized.

3. The plane part of the MEMS plane resonator and the substrate are made of the same material, the thermal expansion coefficients are matched, and the stress influence caused by temperature change is small. The cavity in the substrate is prepared by etching, the depth is adjustable, and the range is large, so that the amplitude of the MEMS planar resonator can be as large as ten micrometers.

4. The preparation method of the MEMS planar resonator is suitable for the wafer-level MEMS processing technology, is also suitable for laser cutting, and can be used for single processing technology, and has the advantages of simple method and few processing steps. In the preparation method, one or more layers of protective materials are prepared by using the conventional MEMS micro-processing technology such as sputtering or electron beam evaporation, and even the laser cutting can be directly performed without a protective film. The preparation method of the MEMS planar resonator provides a wafer level preparation process, and has the characteristics of low cost, large batch and the like; the application provides a method for directly processing the MEMS plane resonator by laser cutting or laser induced corrosion, which is simple and has no extra processing technology.

Drawings

FIG. 1 is a schematic diagram of a MEMS planar resonator according to a first embodiment of the present application;

FIG. 2 is a schematic top view of a MEMS planar resonator according to a first embodiment of the present application;

fig. 3 (a) is a schematic view of a silicon substrate wafer of a first embodiment of a method for manufacturing a MEMS planar resonator according to the present application.

Fig. 3 (b) is a schematic diagram of a chamber processing of a first embodiment of a method for manufacturing a MEMS planar resonator according to the present application.

Fig. 3 (c) is a schematic diagram of wafer bonding between a silicon structure wafer and a silicon substrate in a first embodiment of a method for manufacturing a MEMS planar resonator according to the present application.

Fig. 3 (d) is a schematic view of thinning a silicon structure wafer on a bonded wafer according to a first embodiment of the method for manufacturing a MEMS planar resonator according to the present application.

Fig. 3 (e) is a schematic diagram of a first embodiment of a method for fabricating a MEMS planar resonator according to the present application.

Fig. 3 (f) is a schematic diagram illustrating a processing of a suspended vibration portion of a MEMS planar resonator according to a first embodiment of the method for manufacturing a MEMS planar resonator according to the present application.

Fig. 3 (g) is a schematic diagram showing photoresist removal of a first embodiment of the method for manufacturing a MEMS planar resonator according to the present application.

Fig. 4 (a) is a schematic diagram illustrating a second to fourth embodiment of a method for manufacturing a MEMS planar resonator according to the present application.

Fig. 4 (b) is a schematic diagram of chamber processing of the second to fourth embodiments of the method for manufacturing a MEMS planar resonator according to the present application.

Fig. 4 (c) is a schematic diagram of bonding a wafer to a substrate in the structure of the second to fourth embodiments of the method for manufacturing a MEMS planar resonator according to the present application.

Fig. 4 (d) is a schematic diagram showing the process of forming a protective film on a bonding wafer according to the second to fourth embodiments of the method for manufacturing a MEMS planar resonator of the present application.

Fig. 4 (e) is a schematic diagram illustrating a processing of a suspended vibration portion of a MEMS planar resonator according to a second embodiment to a fourth embodiment of the method for manufacturing a MEMS planar resonator according to the present application.

Fig. 4 (f) is a schematic diagram showing removal of the protective film in the second to fourth embodiments of the method for manufacturing a MEMS planar resonator according to the present application.

Fig. 5 is a schematic view of laser processing of a MEMS planar resonator according to the present application.

The figure indicates: 100. a MEMS planar resonator; 102. a vibrating beam; 104. a bridge; 105. a bar-shaped hole; 106. flying wings; 107. a rectangular hole; 108. a leg; 110. a tail wing; 112. a tail wing fixing part; 114. a substrate; 116. a chamber; 120. a substrate wafer; 122. a thin layer; 124. a chamber; 130. a structural wafer; 132. a protective film; 134. a window; 136. a through hole; 138. the MEMS planar resonator is suspended at the vibration part.

Detailed Description

For a better understanding of the objects, structures and functions of the present application, a MEMS planar resonator and a method for manufacturing the same are described in further detail below with reference to the accompanying drawings.

As shown in fig. 1, a MEMS planar resonator 100 is formed by a beam 102, a bridge 104, flying wings 106, legs 108 and a tail wing 110, wherein the beam 102 is connected with the middle of the bridge 104, the bridge 104 is connected with the upper edges of two rectangular flying wings 106, the beam 102 is isolated from the flying wings 106 by a strip-shaped hole 105, the edge of each flying wing 106 is connected with the edge of the rectangular tail wing 110 by the legs 108, rectangular holes 107 are formed in the two flying wings 106, the two legs 108 and the tail wing 110, and the flying wings 106, the bridge 104, the legs 108 and the periphery of the tail wing 110 form a large rectangle; a portion of the tail 110 is integrally bonded to a substrate 114 having a cavity 116; the portions of the beam 102, bridge 104, flying wing 106, leg 108, tail 110 not bonded to the substrate 114 constitute the MEMS planar resonator suspended vibration sites 138.

The included angle between the side wall of the MEMS planar resonator suspended vibration region 138 and the surface of the MEMS planar resonator suspended vibration region 138 is between 80-90 degrees.

The horn 102, bridge 104, flying wing 106, leg 108 are the same material as the tail 110.

The material of the vibration beam 102, the bridge 104, the flying wing 106, the leg 108 and the tail wing 110 is one of group III-V semiconductor material and group IV semiconductor material, and may be one of monocrystalline silicon, monocrystalline silicon carbide, monocrystalline silicon nitride, gallium arsenide, quartz glass, quartz crystal, monocrystalline alumina and monocrystalline diamond.

The substrate 114 is made of one or more of a silicon-based wafer, a compound semiconductor wafer, a third generation semiconductor wafer, an optical wafer, and other substrate wafers, and may be, for example, one of a silicon wafer, a gallium arsenide wafer, a gallium phosphide wafer, a gallium antimonide wafer, an indium phosphide wafer, an indium arsenide wafer, an indium antimonide wafer, a silicon carbide wafer, a gallium nitride wafer, an aluminum nitride wafer, a gallium oxide wafer, a zinc oxide wafer, a quartz glass wafer, a quartz wafer, a lithium niobate wafer, a sapphire wafer, a diamond wafer, and a germanium wafer.

An example of a 300um thick single crystal silicon MEMS planar resonator 100 is given herein. As shown in fig. 1 (b), the legs 108 of the MEMS planar resonator 100 have a width of 0.50mm and a length of 11.75mm; the width of the vibration beam 102 is 1.50mm and the length is 6.50mm. The first-order modal frequency of the vibration beam is about 8.5 kHz; the amplitude of the horn 102 is maximized and the amplitudes of the bridge 104 and flying wing 106 are sequentially reduced. In the mode Liang Yijie, strain energy is concentrated primarily at the junction of the bridge 104 and the beam 102. The dissipation of vibrational energy to the substrate through the wing 106 and leg 108 to the tail attachment portion 112, and particularly the elongated leg 108, facilitates isolation of energy, locks energy exiting the bridge 104 into the wing 106, reduces anchor loss, and this configuration facilitates achieving a high Q. When the single crystal silicon vibration beam with the thickness of 300um generates out-of-plane vibration, the Q value of the resonator is less influenced by surface loss.

In terms of structural design, the resonant frequency can be changed by adjusting the length of the vibration beam 102; to reduce anchor zone loss, the length of leg 108 may be further increased. For MEMS planar resonators 100 of other thicknesses, the dimensions are varied so that the eigenfrequency of the first order mode of the beam is around 10 kHz. The dimensions of the MEMS planar resonator 100 are designed primarily according to the specific application requirements without selecting 10kHz as a design reference.

A first embodiment of a method of manufacturing a MEMS planar resonator:

as shown in fig. 2, a method for preparing a MEMS planar resonator includes the following steps:

step one, as shown in fig. 2 (b), a chamber 124 with a depth of 100um is processed on a silicon substrate wafer 120 with a crystal orientation of <100> and a thickness of 500um of 12 inches by wet etching or dry etching;

step two, as shown in fig. 2 (c), the connection between the silicon structure wafer 130 with the crystal orientation of 300um thickness <100> and the silicon substrate wafer 120 with 12 inches is realized by a low-temperature bonding technology;

step three, as shown in fig. 2 (d), the thickness of the silicon structure wafer 130 is reduced to 50um by thinning, grinding and polishing;

step four, as shown in fig. 2 (e), a window 134 is formed on the silicon wafer 130 by spin-coating photoresist 132, photolithography, and development;

step five, as shown in fig. 2 (f), etching through the silicon structure wafer by deep reactive ion etching to form a through hole 136, and processing a suspended vibration part 138 of the MEMS planar resonator;

step six, as shown in fig. 2 (g), the wafer is diced and then the photoresist 132 is removed, and the MEMS planar resonator 100 is obtained after cleaning.

The plane part of the MEMS plane resonator and the substrate are made of monocrystalline silicon, the thermal expansion coefficients are matched, and the stress influence caused by temperature change is small. The cavities in the substrate are prepared by etching and are of adjustable depth, in the example described above, 100um in depth, so that the MEMS planar resonator amplitude can be as large as ten microns.

A second embodiment of a method of manufacturing a MEMS planar resonator:

as shown in fig. 3, a method for preparing a MEMS planar resonator includes the following steps:

step one, as shown in fig. 3 (a), growing a silicon oxide film 122 with a thickness of 1um on a silicon substrate wafer 120 with a thickness of 500um and a crystal orientation of <100 >;

step two, as shown in fig. 3 (b), after photoetching and developing and then removing part of the silicon oxide film, processing a cavity 124 with a depth of 200um on the silicon substrate wafer 120 by dry etching;

step three, as shown in fig. 3 (c), the connection between the quartz glass structure wafer 130 with the thickness of 300um and the silicon substrate wafer 120 with the thickness of 4 inches is realized by a low-temperature bonding technology;

step four, as shown in fig. 3 (d), a Cr/Au/Ni protective film 132 is formed by sputtering a Cr/Au metal layer having a thickness of 50nm and 100nm, respectively, on a quartz glass structure wafer 130, and electroplating metal Ni having a thickness of 10 um; the photoresist is coated on the quartz glass structure wafer 130 by spin coating, photoetching and developing, and Ni, au and Cr are sequentially etched and removed to form a window 134;

step five, as shown in fig. 3 (e), the quartz glass structure wafer 130 is etched through by dry etching to form a through hole 136, and a suspended vibration part 138 of the MEMS planar resonator is processed;

step six, as shown in fig. 3 (f), the protective film 132 is removed after dicing, and the MEMS planar resonator is obtained after cleaning.

An example of a 300um thick quartz glass MEMS planar resonator is given here. The legs 108 of the MEMS planar resonator 100 have a width of 0.50mm and a length of 9.0mm; the width of the vibration beam 102 is 1.50mm and the length is 6.0mm. When the quartz glass vibration beam with the thickness of 300um generates out-of-plane vibration, the Q value of the resonator is less influenced by surface loss; the first-order modal frequency of the resonator vibration beam is about 6kHz, the resonator works in an adiabatic region, and the thermoelastic damping is 10 ^-8 The magnitude, and therefore the thermoelastic damping of quartz glass MEMS planar resonators is negligible.

A third embodiment of a method of manufacturing a MEMS planar resonator:

as shown in fig. 3 (a) to 3 (c) and 4, a method for manufacturing a MEMS planar resonator includes the steps of:

step one, as shown in fig. 3 (a), growing a polysilicon film 122 with a thickness of 1um on a quartz glass substrate wafer 120 with a thickness of 8 inches and 1000um by low pressure chemical vapor deposition;

step two, as shown in fig. 3 (b), after photoetching and developing and then removing part of the polysilicon film, a chamber 124 with a depth of 50um is processed on the quartz glass substrate wafer 120 by wet etching;

step three, as shown in fig. 3 (c), the connection between the quartz glass structure wafer 130 with the thickness of 8 inches and 500um and the quartz glass substrate wafer 120 is realized through a low-temperature bonding technology;

step four, as shown in fig. 4, a through hole 136 is formed on the quartz glass structure wafer 130 by laser cutting, and a suspended vibration part 138 of the MEMS planar resonator is processed;

and fifthly, dicing the wafer, then placing the wafer into a buffer oxide etching solution to remove a damaged layer caused by laser cutting, and cleaning to obtain the clean quartz glass MEMS planar resonator.

The laser in the fourth step is a femtosecond laser or a picosecond laser.

An example of a 500um thick quartz glass MEMS planar resonator is given here. The legs 108 of the MEMS planar resonator 100 have a width of 0.50mm and a length of 9.0mm; the width of the vibration beam 102 is 1.50mm and the length is 6.0mm. When the quartz glass vibration beam with the thickness of 500um generates out-of-plane vibration, the influence of surface loss is negligible; the first-order modal frequency of the resonator vibration beam is about 10kHz, the resonator works in an adiabatic region, and the thermoelastic damping is 10 ^-9 The magnitude, and therefore the thermoelastic damping of quartz glass MEMS planar resonators is negligible. The plane part of the MEMS plane resonator and the substrate are made of quartz glass, the thermal expansion coefficients are matched, and the stress influence caused by temperature change is small.

The buffered oxide etchant may be a dilute hydrofluoric acid (HF) solution, HF, and NH ₄ Mixed solution of F.

A fourth embodiment of a method for manufacturing a MEMS planar resonator:

as shown in fig. 3 (a) to 3 (c) and 4, a method for manufacturing a quartz glass MEMS planar resonator includes the steps of:

steps one to three are the same as in the fourth embodiment;

step four, as shown in fig. 4, the suspended vibration part 138 of the MEMS planar resonator is prepared by laser induced corrosion, and specifically includes: the specific area of the quartz glass structure wafer 130 is irradiated by laser to change the properties, the quartz glass structure wafer 130 is put into hydrofluoric acid solution or potassium hydroxide solution, and the irradiated and denatured area is corroded and removed, so that the suspended vibration part 138 of the quartz glass MEMS planar resonator is obtained.

The laser is a femtosecond laser or a picosecond laser;

the laser may be a femtosecond laser, for example, a femtosecond laser having a wavelength of 800nm, a femtosecond laser having a wavelength of 1030nm, or a femtosecond laser having a wavelength of 1064 nm.

The denatured area etching solution may also be diluted hydrofluoric acid (HF) solution, HF and NH ₄ Mixed solutions of F, and the like.

In embodiments 1 to 4, the substrate wafer 120 and the structural wafer 130 may be made of different materials, and may be connected by a low-temperature bonding technology, and the MEMS planar resonator structure 138 may be fabricated by a micro-processing process corresponding to the structural wafer 130.

The material of the structural wafer 130 is one of III-V semiconductor material and IV semiconductor material, including, but not limited to, monocrystalline silicon carbide, monocrystalline silicon nitride, gallium arsenide, quartz glass, quartz crystal, monocrystalline aluminum oxide, monocrystalline diamond.

The substrate wafer 120 is made of one or more of a silicon-based wafer, a compound semiconductor wafer, a third generation semiconductor wafer, an optical wafer, and other substrate wafers, and the wafer material includes a III-V semiconductor material, a IV semiconductor material, specifically includes a silicon wafer, a gallium arsenide wafer, a gallium phosphide wafer, a gallium antimonide wafer, an indium phosphide wafer, an indium arsenide wafer, an indium antimonide wafer, a silicon carbide wafer, a gallium nitride wafer, an aluminum nitride wafer, a gallium oxide wafer, a zinc oxide wafer, a quartz glass wafer, a quartz wafer, a lithium niobate wafer, a sapphire wafer, a diamond wafer, a germanium wafer, and the like. The material of the substrate wafer 120 is not limited to these materials, and it is noted that the substrate wafer may be a composite wafer composed of a wafer of one material and a wafer of another material, such as an SOI silicon wafer (silicon on insulator).

A quartz glass MEMS planar resonator applied to an embodiment characterized by a 10nm metal film:

processing a quartz glass MEMS planar resonator with the thickness of 50 um: processing a cavity with the depth of 100um on a silicon substrate wafer with the thickness of 4 inches and 1000um through dry etching; the connection between the quartz glass structure wafer with the thickness of 4 inches and 300um and the silicon substrate wafer is realized by a low-temperature bonding technology; reducing the thickness of the quartz glass structure wafer to 50um through thinning, grinding and polishing; forming a window on a quartz glass structure wafer by spin coating photoresist, photoetching and developing; etching through the quartz glass structure wafer by utilizing laser-induced corrosion to form a through hole, and processing a suspended vibration part 138 of the quartz glass MEMS planar resonator; the wafer is diced and the photoresist is removed, and the quartz glass MEMS planar resonator 100 with a thickness of 50um is obtained after cleaning.

The substrate of the quartz glass MEMS planar resonator with the thickness of 50um is fixed on piezoelectric ceramics, and the frequency and the Q value of the first-order mode of the vibration beam are measured by adopting a laser Doppler vibration meter.

A layer of metal chromium with the thickness of 10nm is sputtered on a quartz glass MEMS planar resonator with the thickness of 50um, a substrate 114 is fixed on piezoelectric ceramics, and the frequency and the Q value of the first-order mode of the vibrating beam are measured by adopting a laser Doppler vibrometer.

The Q value of the 10nm metal chromium can be calculated by the above Q value difference.

Note that the dimensions in the embodiment are merely examples, and are not limited to these dimensions.

The MEMS planar resonator provided by the application can be further used for measuring the properties of the film, such as Young's modulus of the film and Q value of the film.

It will be understood that the application has been described in terms of several embodiments, and that various changes and equivalents may be made to these features and embodiments by those skilled in the art without departing from the spirit and scope of the application. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the application without departing from the essential scope thereof. Therefore, it is intended that the application not be limited to the particular embodiment disclosed, but that the application will include all embodiments falling within the scope of the appended claims.

Claims

1. The MEMS plane resonator is characterized by comprising a vibrating beam (102), a bridge (104), flying wings (106), legs (108) and tail wings (110), wherein the vibrating beam (102) is connected with the middle of the bridge (104), the bridge (104) is connected with the upper edges of the two rectangular flying wings (106), the vibrating beam (102) is isolated from the flying wings (106) by strip-shaped holes (105), the edge of each flying wing (106) is connected with the edge of the rectangular tail wing (110) through the leg (108), rectangular holes (107) are formed in the two flying wings (106), the two legs (108) and the tail wing (110), and the peripheries of the flying wings (106), the bridge (104), the legs (108) and the tail wings (110) form a large rectangle; a portion of the tail (110) is integrally bonded to a substrate (114) with a chamber (116); the beam (102), bridge (104), flying wing (106), leg (108), tail (110) portions not bonded to the substrate (114) form a suspended vibration region (138) of the MEMS planar resonator.

2. The MEMS planar resonator according to claim 1, wherein the side wall of the MEMS planar resonator suspended vibration site (138) is between 80-90 degrees from the surface of the MEMS planar resonator suspended vibration site (138).

3. The MEMS planar resonator according to claim 1, wherein the beam (102), the bridge (104), the flying wing (106), the leg (108), and the tail (110) are the same material.

4. The MEMS planar resonator according to claim 1, wherein the material of the beam (102), bridge (104), flying wing (106), leg (108), tail (110) is one of a group III-V semiconductor material, a group IV semiconductor material.

5. The MEMS planar resonator according to claim 1, wherein the substrate (114) is fabricated from one or more of a silicon-based wafer, a compound semiconductor wafer, a third generation semiconductor wafer, and an optical wafer.

6. A method of manufacturing a MEMS planar resonator according to any one of claims 1-5, comprising the steps of:

step one, processing a cavity (124) on a substrate wafer (120) through wet etching or dry etching;

step two, realizing the connection between the structural wafer (130) and the substrate wafer (120) through a low-temperature bonding technology;

step three, processing one or more layers of protective films on the structural wafer (130) through one or more of sputtering, electron beam evaporation, low-pressure chemical vapor deposition, plasma enhanced chemical vapor deposition and electroplating;

step four, forming a window (134) on the structural wafer (130) through spin coating photoresist (132), photoetching and developing;

step five, processing a suspended vibration part (138) of the MEMS planar resonator by utilizing one or more of wet etching, dry etching, laser cutting, laser induced etching and combined laser cutting and chemical etching means;

and step six, dicing the wafer, removing the photoresist (132) and the protective film, and cleaning to obtain the MEMS planar resonator (100).

7. The method of manufacturing a MEMS planar resonator according to claim 6, wherein the protective film in the third step is an anti-corrosion film made of one or more thin films of polysilicon, amorphous silicon, silicon nitride, cr/Au/Cr/Au, polysilicon/Cr/Au, amorphous silicon/SiC, cr/Au/Ni, and elemental metals.

8. The method of manufacturing a MEMS planar resonator according to claim 6, wherein the substrate wafer (120) is manufactured from one or more of a silicon-based wafer, a compound semiconductor wafer, a third generation semiconductor wafer, and an optical wafer.

9. The method of manufacturing a MEMS planar resonator according to claim 6, wherein the structural wafer (130) is one of a group III-V semiconductor material, a group IV semiconductor material.

10. The method of manufacturing a MEMS planar resonator according to claim 6, wherein the laser in step five is a femtosecond laser or a picosecond laser.