CN116539261A - Assessment method and measurement structure for energy loss of quartz glass wafer and preparation method thereof - Google Patents
Assessment method and measurement structure for energy loss of quartz glass wafer and preparation method thereof Download PDFInfo
- Publication number
- CN116539261A CN116539261A CN202310563076.4A CN202310563076A CN116539261A CN 116539261 A CN116539261 A CN 116539261A CN 202310563076 A CN202310563076 A CN 202310563076A CN 116539261 A CN116539261 A CN 116539261A
- Authority
- CN
- China
- Prior art keywords
- quartz glass
- resonator
- beam resonator
- glass wafer
- vibration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 176
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000005259 measurement Methods 0.000 title abstract description 17
- 238000002360 preparation method Methods 0.000 title abstract description 17
- 238000012545 processing Methods 0.000 claims abstract description 13
- 230000001681 protective effect Effects 0.000 claims description 42
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 230000005284 excitation Effects 0.000 claims description 19
- 238000005260 corrosion Methods 0.000 claims description 16
- 230000007797 corrosion Effects 0.000 claims description 16
- 238000003698 laser cutting Methods 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 239000010410 layer Substances 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000005459 micromachining Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000011156 evaluation Methods 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 53
- 239000010408 film Substances 0.000 description 38
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004925 denaturation Methods 0.000 description 2
- 230000036425 denaturation Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 241000336896 Numata Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M7/00—Vibration-testing of structures; Shock-testing of structures
- G01M7/02—Vibration-testing by means of a shake table
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M7/00—Vibration-testing of structures; Shock-testing of structures
- G01M7/02—Vibration-testing by means of a shake table
- G01M7/025—Measuring arrangements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses an evaluation method and a measurement structure of energy loss of a quartz glass wafer and a preparation method thereof. The method for evaluating the energy loss of the quartz glass wafer comprises the following steps: processing an oscillating beam resonator based on a quartz glass wafer; fixing a part of the tail wing of the vibration beam type resonator on the base; exciting the beam resonator; and measuring the resonant frequency by using a laser vibration meter, and measuring the Q value of the resonator by using an attenuation method. The quartz glass vibration beam resonator consists of vibration beam, bridge, flyer, legs and tail wing, the vibration beam is connected to the middle of the bridge, the bridge is connected to the upper edges of two rectangular flyers, the vibration beam and the flyer are separated by strip-shaped hole, the edge of each flyer is connected to the edge of the rectangular tail wing via legs, the two flyers, the two legs and the tail wing enclose rectangular hole, and the whole structure has one large rectangle. The evaluation method and the vibration beam type resonator provided by the invention are used for measuring the energy loss of the quartz glass wafer, and have the advantages of small volume and simple measurement.
Description
Technical Field
The invention belongs to the field of micro-electromechanical systems, and particularly relates to an evaluation method and a measurement structure of energy loss of a quartz glass wafer and a preparation method thereof.
Background
Quartz glass has been widely used in fields of optics, lighting, microfluidics, etc. because of its excellent optical properties, chemical stability, low thermal conductivity, high resistivity, etc. Among them, in a laser interference gravitational wave astronomical station (LIGO) gravitational wave measuring apparatus, quartz glass has been used due to advantages of extremely low energy loss, excellent optical properties, and the like. In order to select quartz glass satisfying the gravitational wave measurement at the beginning of the last century, p.saulson et al, university of snow city, uses an optical fiber or a wire to hang a cylindrical body or a bulk quartz glass, and measures the quality factor (Q value) of the cylindrical body or the bulk quartz glass; the quality factor (Q value) of quartz glass with special structure is measured, wherein the special structure is like 'optical fiber to be measured + isolation module + isolation optical fiber + isolation module' of which the quartz glass is drawn by heating by AndriM.Gretarsson and GregoryM.Harry in snow university; a device was set up by tokyo university k.numata et al to measure the quality factor (Q value) of cylindrical quartz glass. In the measuring methods, the quartz glass to be measured has large structure volume, high fixing mode requirement, a vacuum system is overlapped, and the whole device is complex and huge in volume.
In recent years, quartz glass wafers have important application prospects in the fields of semiconductors, micro-electro-mechanical systems (MEMS), photoelectricity and the like, and particularly, the quartz glass wafers begin to explore application scenes in the MEMS field. The quartz glass wafer has important application prospect in the directions of micro-machined resonators of core elements such as MEMS three-dimensional shell resonator gyroscopes, MEMS plane vibration gyroscopes, MEMS oscillators and the like. The energy loss of the quartz glass wafer can be evaluated to help analyze the influence of micro-machining on the resonator, so that the micro-machining process is improved, and the method has important significance in realizing the high-Q-value micro-resonator. Quartz glass wafers have begun to receive attention in the MEMS field, but there is currently no simple and effective means or method to measure the energy loss of quartz glass wafers.
Disclosure of Invention
The invention aims to provide an evaluation method and a measurement structure for energy loss of a quartz glass wafer and a preparation method thereof, so as to solve the technical problem that the energy loss of the quartz glass wafer is difficult to measure at present.
In order to solve the technical problems, the specific technical scheme of the invention is as follows:
an evaluation method of energy loss of a quartz glass wafer comprises the following steps:
preparing a vibrating beam resonator based on a quartz glass wafer; the vibration beam type resonator comprises a vibration beam, a bridge, an all-wing aircraft, legs and a tail wing; the bridge is connected with the upper edges of the two rectangular flying wings, the vibrating beam and the flying wings are isolated by strip-shaped holes, the edge of each flying wing is connected with the edge of the rectangular tail wing through legs, the two flying wings, the two legs and the tail wing are surrounded by rectangular holes, and the periphery of the vibrating beam resonator forms a large rectangle;
fixing a portion of the beam resonator to the base; placing the fixed vibrating beam resonator into a vacuum cavity;
exciting a plurality of vibration modes of the vibration beam resonator by one or more excitation modes of electrostatic excitation, acoustic excitation, photo-thermal excitation, electromagnetic excitation, piezoelectric excitation, electric excitation and mechanical excitation;
measuring the resonant frequency and amplitude of the vibrating beam resonator by one or more of optical detection, electrostatic detection, piezoelectric detection and piezoresistive detection means under vacuum conditions; exciting the beam resonator with the found resonant frequency f, removing excitation to enable the beam resonator to vibrate freely after the amplitude is stable, and recording the time t when the amplitude decays to 1/e; calculating the quality factor Q value of each vibration mode of the vibration beam type resonator: q=pi×f×t, and the energy loss of the quartz glass wafer was evaluated using the highest Q value measured in the vibration mode.
Further, a portion of the beam resonator is fixed to the base by means including solder fixing, glue fixing, or directly sandwiching the two bases.
Further, the quartz glass vibrating beam resonator is prepared by micromachining a quartz glass wafer, and the thickness of the quartz glass vibrating beam resonator is equal to that of the quartz glass wafer.
Further, the included angle between the side wall of the quartz glass vibrating beam resonator and the surface of the quartz glass vibrating beam resonator is larger than 45 degrees.
The invention also discloses a preparation method of the quartz glass vibrating beam resonator, which comprises the following steps:
step one, processing a protective film on a quartz glass wafer;
spin-coating photoresist, photoetching and developing to remove the exposed protective film;
step three, processing the quartz glass vibrating beam resonator by using one or more methods of hydrofluoric acid corrosion, dry etching, laser cutting and laser induced corrosion;
and step four, removing the photoresist and the protective film, and cleaning to obtain the clean quartz glass vibrating beam resonator.
Further, if the protective film in the first step is used for protecting the quartz glass from hydrofluoric acid corrosion, the protective film is a hydrofluoric acid corrosion resistant film formed by one material of polysilicon, amorphous silicon, cr/Au/Cr/Au, polysilicon/Cr/Au and amorphous silicon/SiC; the protective film in the first step is Cr/Au/Ni multilayer film material if being used for protecting quartz glass in dry etching; the protective film in the first step is one material of photoresist, polysilicon and Cr monolayer film if the protective film is used for protecting quartz glass in laser cutting.
The invention also discloses a preparation method of the second quartz glass vibrating beam resonator, which comprises the following steps: and directly processing the quartz glass vibrating beam resonator by using laser cutting, and then putting the quartz glass vibrating beam resonator into a buffer oxide etching solution to remove a damaged layer caused by the laser cutting.
Further, the laser is a femtosecond laser or a picosecond laser.
The invention also discloses a preparation method of the third quartz glass vibrating beam resonator, which comprises the following steps: the quartz glass vibrating beam resonator is prepared by laser induced corrosion and specifically comprises: and irradiating a specific area of the quartz glass wafer by using laser to change the properties, putting the quartz glass wafer into hydrofluoric acid solution or potassium hydroxide solution, and etching to remove the irradiation denaturation area to obtain the quartz glass vibrating beam resonator.
The assessment method and the measurement structure of the quartz glass wafer energy loss and the preparation method thereof have the following advantages:
1. according to the invention, the quartz glass vibration beam resonator can be measured by adopting a non-contact laser Doppler vibration measurement principle, so that laser vertically irradiates the surface of the quartz glass vibration beam resonator through a glass observation window on a vacuum cavity, and reflected signals can be ensured; meanwhile, the surface of the resonator does not need to be metallized, and the Q value of the resonator is not reduced. Furthermore, the non-contact measurement does not affect the vibration of the resonator. Based on the laser Doppler vibration measurement principle, the Q value of the resonator is measured by adopting an attenuation method, so that the measurement accuracy is high, and particularly for high Q value test, the measurement accuracy and reliability are high.
2. The high Q value modes of the quartz glass vibrating beam type resonator adopted by the invention are a first-order mode (shown in fig. 3 (a)) of the vibrating beam and a high-order mode of the vibrating beam. As shown in fig. 3 (b), in the mode of vibration Liang Yijie, strain energy is concentrated at the joint of the vibration beam and the bridge, and the energy leaks to the substrate and passes through the flying wing, the leg and the tail wing. The legs are fine and long, most of energy is isolated, the influence of anchor area loss is restrained, and the high Q value is realized, so that the fixing mode is simple. This advantage simplifies the construction and reduces the measurement requirements.
3. The quartz glass vibrating beam resonator adopted by the invention has simple structure, small size and small occupied volume, so that the measuring device comprising the vacuum system has small volume. The quartz glass vibrating beam resonator adopted by the invention has small volume, light weight and low requirement on a fixing mode, so that the quartz glass vibrating beam resonator can be excited by adopting a piezoelectric ceramic plate, does not need to be metallized to realize conduction, and does not introduce extra energy loss. The piezoelectric excitation method is simple, the measurement is easy to build, and the occupied volume is small.
4. The preparation method of the quartz glass vibrating beam resonator is suitable for a wafer-level MEMS processing technology, is also suitable for laser cutting, can be used for a single processing technology, and is simple in method and few in processing steps. In the preparation method, one or more layers of protective materials are prepared by using the conventional MEMS micro-processing technology such as sputtering or electron beam evaporation, and even the laser cutting can be directly performed without a protective film. The preparation method of the quartz glass vibrating beam resonator provides a wafer level preparation process and has the characteristics of low cost, large batch and the like; the invention provides a quartz glass vibrating beam resonator directly processed by laser cutting or laser induced corrosion, which has simple method and no extra processing technology.
Drawings
FIG. 1 is a schematic illustration of the test of the present invention;
FIG. 2 (a) is a schematic top view of the quartz glass beam resonator of the present invention;
FIG. 2 (b) is a three-dimensional schematic view of the quartz glass beam resonator of the present invention;
FIG. 3 (a) is a first order mode shape of a beam of a quartz glass beam resonator of the present invention;
FIG. 3 (b) is a graph showing the local strain energy density distribution in the first order mode shape of a beam of a quartz glass beam resonator of the present invention;
FIG. 4 (a) is a schematic view showing deposition of a protective film on a quartz glass wafer in a first embodiment of a method for manufacturing a quartz glass beam resonator of the present invention;
FIG. 4 (b) is a schematic view showing the windowing of a protective film in a first embodiment of a method for manufacturing a quartz glass vibrating beam resonator according to the invention;
FIG. 4 (c) is a schematic view of wet etching of a quartz glass wafer in a first embodiment of a method of manufacturing a quartz glass beam resonator according to the invention;
FIG. 4 (d) is a schematic view showing removal of a protective film after etching in the first embodiment of the method for manufacturing a quartz glass vibrating beam resonator of the present invention;
FIG. 5 (a) is a schematic view showing deposition of a protective film on a quartz glass wafer in a second embodiment of a method for manufacturing a quartz glass beam resonator of the present invention;
FIG. 5 (b) is a schematic view showing the windowing of a protective film in a second embodiment of a method for producing a quartz glass vibrating beam resonator according to the invention;
FIG. 5 (c) is a schematic diagram of a quartz glass wafer plasma etching in a second embodiment of a method of manufacturing a quartz glass beam resonator according to the invention;
FIG. 5 (d) is a schematic view showing removal of a protective film after etching in a second embodiment of a method for manufacturing a quartz glass vibrating beam resonator according to the present invention;
FIG. 6 (a) is a schematic view showing deposition of a protective film on a quartz glass wafer in a third embodiment of a method for manufacturing a quartz glass beam resonator of the present invention;
FIG. 6 (b) is a schematic view showing the windowing of a protective film in a second embodiment of a method for producing a quartz glass vibrating beam resonator according to the invention;
FIG. 6 (c) is a schematic view of laser cutting of a quartz glass wafer in a second embodiment of the method for manufacturing a quartz glass beam resonator of the present invention;
FIG. 6 (d) is a schematic view showing removal of a protective film after etching in a second embodiment of a method for manufacturing a quartz glass vibrating beam resonator according to the invention;
the figure indicates: 10. a laser vibrometer; 12. laser; 20. a data acquisition and processing module; 30. a control module; 40. a signal generator; 50. an xyz displacement stage; 60. a vacuum chamber; 70. a vibrating beam resonator; 72. a vibrating beam; 74. a bridge; 75. a bar-shaped hole; 76. flying wings; 77. a rectangular hole; 78. a leg; 80. a tail wing; 82. the lower half of the tail wing; 90. a base; 92. piezoelectric ceramics; 120. quartz glass wafers; 122. a protective film; 124. a window; 126. and a through hole.
Detailed Description
In order to better understand the purpose, structure and function of the present invention, the following describes in further detail an evaluation method and measurement structure for energy loss of a quartz glass wafer and a preparation method thereof with reference to the accompanying drawings.
As shown in fig. 1 and 2, a method for evaluating energy loss of a quartz glass wafer includes:
machining a beam resonator 70 based on a quartz glass wafer; as shown in FIG. 1, the quartz glass beam resonator 70 includes a beam 72, a bridge 74, an airfoil 76, legs 78, and a tail 80. Wherein the vibration beam 72 is connected with the middle of the bridge 74, the bridge 74 is connected with the upper edges of two rectangular flying wings 76, the vibration beam 72 is isolated from the flying wings 76 by a strip-shaped hole 75, the edge of each flying wing 76 is connected with the edge of a rectangular tail wing 80 by a leg 78, the rectangular holes 77 are surrounded by the two flying wings 76, the two legs 78 and the tail wing 80, and the periphery of the whole structure forms a large rectangle.
As shown in fig. 2, the lower fin half 82 of the beam resonator 70 is secured to the metal base 90 by glue (e.g., crystal 509) or epoxy (e.g., stycast2850 FT) or glass solder or conductive silver paste; fixing the metal base 90 to the piezoelectric ceramic 92; the fixed quartz glass beam resonator 70 is placed in the vacuum chamber 60.
As shown in fig. 1, the xyz displacement table 50 is adjusted to enable the laser 12 of the laser vibration meter 10 to be incident on the surface of the vibration beam 72 to obtain a good reflection signal, the piezoelectric ceramic 92 is enabled to excite the quartz glass vibration beam resonator 70 through the chirp signal of the signal generator 40, and the data acquisition and processing module 20 and the control module 30 are utilized to obtain a frequency spectrum to find the resonance frequency of the quartz glass vibration beam resonator 70; the vibration mode is confirmed by measuring the amplitudes of the surfaces of different positions of the quartz glass vibration beam resonator 70, and the first-order mode of the vibration beam is found; under the vacuum condition (the vacuum degree is better than 0.01 Pa), exciting the quartz glass vibration beam type resonator 70 by using the found vibration beam first-order mode resonance frequency f, after the amplitude is stable, removing excitation to enable the quartz glass vibration beam type resonator 70 to vibrate freely, and recording the time t when the amplitude decays to 1/e; the quality factor (Q value) of the quartz glass beam resonator 70 was calculated: q=pi×f×t. Similarly, the Q value of the quartz glass beam resonator 70 in different modes was measured.
The thickness of a conventional quartz glass wafer is 300um-600um, and the design range of the first-order mode of the vibrating beam is 4-20kHz as a preferable scheme. Taking a 500um thick quartz glass wafer as an example, the quartz glass beam resonator 70 was adjusted so that the mode of the vibration Liang Yijie was about 10 kHz.
The thickness of the quartz glass beam resonator 70 is the thickness of the quartz glass wafer.
The sidewalls of the quartz glass beam resonator 70 are perpendicular or approximately perpendicular to the surface of the quartz glass beam resonator 70.
An example of the dimensions of a 500um thick quartz glass beam resonator 70 is given here. As shown in fig. 2 (a), the tail 80 of the quartz glass beam resonator 70 has a width of 20.00mm in the Ox direction and a length of 7.00mm in the Oy direction; the legs 78 have a width of 0.50mm in the Ox direction and a length of 14.00mm in the Oy direction; the width of the fly wing 76 in Ox direction is 8.25mm and the length in Oy direction is 9.00mm; the length of the bridge 74 in the Oy direction is 1.50mm; the width of the vibration beam 72 in the Ox direction was 1.50mm, and the length in the Oy direction was 6.00mm. The mode of vibration Liang Yijie is shown in FIG. 3 (a), and the frequency is about 9.4 kHz; the amplitude of the horn 72 is maximized and the amplitudes of the bridge 74 and the flying wing 76 are sequentially reduced. The strain energy density distribution in the vicinity of the vibration beam 72 in the mode of the vibration Liang Yijie is shown in fig. 3 (b), and it can be seen that strain energy is mainly concentrated at the junction of the bridge 74 and the vibration beam 72. The dissipation of vibrational energy to the substrate through the wing 76 and legs 78, particularly the elongated legs 78, facilitates isolation of energy, locks energy exiting the bridge 74 into the wing 76, reduces anchor loss, and this configuration facilitates achieving a high Q.
In terms of structural design, the resonant frequency can be changed by adjusting the length of the vibration beam 72 in the Oy direction; to reduce anchor zone loss, the length of leg 78 in the Oy direction may be increased, for example, the length of leg 78 may be increased to 20mm. For other thicknesses of quartz glass beam resonator 100, the dimensions are varied such that the eigenfrequency of the first order mode of the beam is around 10 kHz. The dimensions of the quartz glass beam resonator 70 are designed primarily for specific application requirements without the need to select 10kHz as a design reference.
A first embodiment of a method of manufacturing a quartz glass beam resonator:
as shown in fig. 4, a method for preparing a quartz glass vibrating beam resonator comprises the following steps:
step one, as shown in fig. 4 (a), a polysilicon protective film 122 with a thickness of 2um is processed on a quartz glass wafer 120 with a thickness of 4 inches and a thickness of 500um by adopting low-pressure chemical vapor deposition;
step two, as shown in fig. 4 (b), double-sided spin coating photoresist, photoetching, developing, and vapor etching to remove the exposed polysilicon protective film, thereby forming a window 124;
step three, as shown in fig. 4 (c), the quartz glass wafer 120 is put into hydrofluoric acid with the concentration of 49%, the corrosion rate is about 1um/min at room temperature, and the through holes 126 are formed by corrosion for more than 6 hours, and at this time, the quartz glass vibrating beam resonator 70 falls off from the quartz glass wafer 120;
step four, as shown in fig. 4 (d), the photoresist and the polysilicon protective film 122 are removed, and the cleaned quartz glass beam resonator 70 is obtained after cleaning.
The protective film 122 in the first step is used for protecting the quartz glass from hydrofluoric acid corrosion, and the material can be a hydrofluoric acid corrosion resistant film formed by amorphous silicon or single-layer or multi-layer materials such as Cr/Au or Cr/Au/Cr/Au or polysilicon/Cr/Au or amorphous silicon/SiC, and the corresponding processing method can be selected. By/is meant that Cr has Au thereon, cr/Au/Cr/Au means that the lowest Cr, the upper layer is Au, the upper layer is further Cr, and the uppermost layer is Au.
The wet etching process has poor verticality of the side wall of the quartz glass vibrating beam resonator 70, and the verticality can be increased by lengthening the etching time to more than 10 hours.
A second embodiment of a method of manufacturing a quartz glass beam resonator:
as shown in fig. 5, a method for preparing a quartz glass vibrating beam resonator comprises the following steps:
step one, as shown in fig. 5 (a), sequentially sputtering 20nm thick metal Cr and 200nm thick metal Au on a 300um thick 4 inch quartz glass wafer 120, and then electroplating 10um thick metal Ni to form a Cr/Au/Ni protective film 122;
step two, as shown in fig. 5 (b), spin-coating photoresist, photoetching and developing, and sequentially removing the exposed Ni/Au/Cr to form a window 124;
step three, as shown in fig. 5 (c), through holes 126 are formed in the quartz glass wafer 120 by plasma etching, and the quartz glass beam resonator 70 is detached from the quartz glass wafer 120;
step four, as shown in fig. 5 (d), the photoresist and the Cr/Au/Ni protective film 122 are removed, and the cleaned quartz glass beam resonator 70 is obtained after cleaning.
The protective film 122 in the first step is used for protecting quartz glass in plasma etching, and the material can also be a plasma etching resistant film formed by single-layer or multi-layer materials such as amorphous silicon or Cr/Au/Cr/Au or polysilicon/Cr/Au or amorphous silicon/SiC, etc., and the corresponding processing method is selected; the material of the protective film 122 in the first step may also be a bulk silicon material, and the preparation may be performed by bonding a silicon wafer and a quartz glass wafer 120 at a low temperature, and then thinning and polishing the silicon wafer.
The protective film 122 may be deposited only on the etched surface of the quartz glass wafer during plasma etching, and the back surface does not need to be processed with a protective film 122.
The quartz glass beam resonator 70 is preferably formed by plasma etching with a sidewall having a vertical profile at an angle of 80-90 degrees to the surface.
A third embodiment of the method for manufacturing a quartz glass vibrating beam resonator:
as shown in fig. 6, a method for preparing a quartz glass vibrating beam resonator comprises the following steps:
step one, as shown in fig. 6 (a), sputtering metal Cr with a thickness of 20nm on a quartz glass wafer 120 with a thickness of 4 inches and a thickness of 100um, spin-coating photoresist to form a Cr/photoresist protective film 122;
step two, as shown in fig. 6 (b), performing photoetching and developing to remove the exposed Cr and form a window 124;
step three, as shown in fig. 6 (c), the quartz glass wafer 120 is laser cut to form a through hole 126, and the quartz glass vibrating beam resonator 70 is detached from the quartz glass wafer 120;
step four, as shown in fig. 6 (d), the Cr/photoresist protective film 122 is removed, and the cleaned quartz glass beam resonator 128 is obtained after cleaning.
The protective film 122 in the first step may also be a single-layer thin film material such as photoresist, polysilicon, amorphous silicon, cr, or other sputtered metal elements.
The laser is a femtosecond laser or a picosecond laser.
A fourth embodiment of the method for manufacturing a quartz glass vibrating beam resonator:
a preparation method of a quartz glass vibrating beam resonator comprises the following steps: the quartz glass vibrating beam type resonator structure is directly processed by laser cutting without a protective film, and then the quartz glass vibrating beam type resonator structure is put into a buffer oxide etching solution to remove a damaged layer caused by laser cutting.
The laser is a femtosecond laser or a picosecond laser.
The buffered oxide etchant may be a dilute hydrofluoric acid (HF) solution, HF, and NH 4 Mixed solution of F.
A fifth embodiment of the method for manufacturing a quartz glass vibrating beam resonator:
a preparation method of a quartz glass vibrating beam resonator, wherein the quartz glass vibrating beam resonator is prepared by laser induced corrosion, specifically comprises the following steps: and irradiating a specific area of the quartz glass wafer by using laser to change the properties, putting the quartz glass wafer into hydrofluoric acid solution or potassium hydroxide solution, and etching to remove the irradiation denaturation area to obtain the quartz glass vibrating beam resonator structure.
The laser may be a femtosecond laser, for example, a femtosecond laser having a wavelength of 800nm, a femtosecond laser having a wavelength of 1030nm, or a femtosecond laser having a wavelength of 1064 nm.
The invention is based on a 4-inch quartz glass wafer, can process at least 5 or more quartz glass vibrating beam resonators, and is beneficial to ensuring the measurement reliability of the energy loss of the quartz glass wafer by measuring a plurality of quartz glass vibrating beam resonators processed on the same wafer, and has important value for analyzing the energy loss of the quartz glass wafer.
It will be understood that the invention has been described in terms of several embodiments, and that various changes and equivalents may be made to these features and embodiments by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (9)
1. The method for evaluating the energy loss of the quartz glass wafer is characterized by comprising the following steps of:
preparing a vibrating beam resonator (70) based on a quartz glass wafer; the vibration beam type resonator (70) comprises a vibration beam (72), a bridge (74), an flying wing (76), legs (78) and a tail wing (80); the bridge (74) is connected with the upper edges of two rectangular flying wings (76), the vibrating beam (72) is isolated from the flying wings (76) by strip-shaped holes (75), the edge of each flying wing (76) is connected with the edge of a rectangular tail wing (80) through legs (78), and the rectangular holes (77) are surrounded by the two flying wings (76), the two legs (78) and the tail wings (80), and the periphery of the vibrating beam resonator (70) forms a rectangle;
fixing a part of the beam resonator (70) to a base (90); placing the fixed vibrating beam resonator (70) into a vacuum cavity (60);
exciting a plurality of vibration modes of the vibration beam resonator (70) by one or more of electrostatic excitation, acoustic excitation, photo-thermal excitation, electromagnetic excitation, piezoelectric excitation, electric excitation and mechanical excitation;
measuring the resonant frequency and amplitude of the beam resonator (70) by one or more of optical detection, electrostatic detection, piezoelectric detection, piezoresistive detection means under vacuum; exciting the beam resonator (70) by using the found resonant frequency f, removing excitation to enable the beam resonator (70) to vibrate freely after the amplitude is stable, and recording the time t when the amplitude decays to 1/e; calculating the quality factor Q value of each vibration mode of the vibration beam type resonator (70): q=pi×f×t, and the energy loss of the quartz glass wafer was evaluated using the highest Q value measured in the vibration mode.
2. The method of evaluating energy loss of a quartz glass wafer according to claim 1, wherein a portion of the beam resonator (70) is fixed to the base by means of solder fixing, glue fixing or directly sandwiched between two bases.
3. The method for evaluating energy loss of a quartz glass wafer according to claim 1, wherein the quartz glass beam resonator (70) is manufactured by micromachining a quartz glass wafer, and the thickness of the quartz glass beam resonator (70) is the thickness of the quartz glass wafer.
4. The method of assessing energy loss of a quartz glass wafer of claim 1, wherein the sidewall of the quartz glass beam resonator (70) is at an angle greater than 45 degrees to the surface of the quartz glass beam resonator (70).
5. The method for manufacturing a quartz glass beam resonator according to any of claims 1-4, comprising the steps of:
step one, processing a protective film on a quartz glass wafer;
spin-coating photoresist, photoetching and developing to remove the exposed protective film;
step three, processing the quartz glass vibrating beam resonator (70) by using one or more methods of hydrofluoric acid corrosion, dry etching, laser cutting and laser induced corrosion;
and step four, removing the photoresist and the protective film, and cleaning to obtain the clean quartz glass vibrating beam resonator (70).
6. The method of manufacturing a quartz glass vibrating beam resonator according to claim 5, wherein the protective film in the first step is a hydrofluoric acid corrosion resistant film made of one of polysilicon, amorphous silicon, cr/Au/Cr/Au, polysilicon/Cr/Au, amorphous silicon/SiC, if the protective film is used to protect the quartz glass from hydrofluoric acid corrosion; the protective film in the first step is Cr/Au/Ni multilayer film material if being used for protecting quartz glass in dry etching; the protective film in the first step is one material of photoresist, polysilicon and Cr monolayer film if the protective film is used for protecting quartz glass in laser cutting.
7. The method for manufacturing a quartz glass beam resonator according to any of claims 1-4, comprising the steps of: a quartz glass vibrating beam resonator (70) is directly processed by laser cutting, and then the quartz glass vibrating beam resonator (70) is put into a buffer oxide etching solution to remove a damaged layer caused by the laser cutting.
8. The method of manufacturing a quartz glass beam resonator of claim 7, wherein the laser is a femtosecond laser or a picosecond laser.
9. The method for manufacturing a quartz glass beam resonator according to any of claims 1-4, comprising the steps of: the quartz glass vibrating beam resonator (70) is prepared by laser induced corrosion and specifically comprises: a specific area of a quartz glass wafer is irradiated with laser light to change properties, and the quartz glass wafer is put into a hydrofluoric acid solution or a potassium hydroxide solution to etch and remove the irradiated and denatured area, thereby obtaining a quartz glass vibrating beam resonator (70).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310563076.4A CN116539261A (en) | 2023-05-18 | 2023-05-18 | Assessment method and measurement structure for energy loss of quartz glass wafer and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310563076.4A CN116539261A (en) | 2023-05-18 | 2023-05-18 | Assessment method and measurement structure for energy loss of quartz glass wafer and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116539261A true CN116539261A (en) | 2023-08-04 |
Family
ID=87450430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310563076.4A Pending CN116539261A (en) | 2023-05-18 | 2023-05-18 | Assessment method and measurement structure for energy loss of quartz glass wafer and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116539261A (en) |
-
2023
- 2023-05-18 CN CN202310563076.4A patent/CN116539261A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9071226B2 (en) | Micromechanical resonator and method for manufacturing thereof | |
| US8279508B2 (en) | Optical reflection element | |
| EP2543987A1 (en) | Resonant photo-acoustic system | |
| JP2002140075A (en) | Cavity spanning bottom electrode of substrate-mounted bulk wave acoustic resonator | |
| JP2009526420A (en) | Tuning frequency of piezoelectric thin film resonator (FBAR) | |
| EP2417700A1 (en) | Mems resonator | |
| US20070000327A1 (en) | Acoustic wave sensing device integrated with micro-channels and method for the same | |
| CN103217553A (en) | Resonance type micro-mechanic acceleration sensor based on electromagnetic excitation detection mode | |
| JP6129187B2 (en) | Bulk wave resonators based on micromachined vertical structures | |
| US20230085815A1 (en) | Non-linear tethers for suspended devices | |
| US20170016742A1 (en) | Method of fabricating micro-glassblown gyroscopes | |
| CN110440897A (en) | The preparation method of Echo Wall microcavity acoustic sensor and its dicyclo resonant cavity | |
| CN107271332B (en) | A kind of MEMS fluid viscosity sensor chip and preparation method thereof based on face interior resonance | |
| EP4140941A1 (en) | Fabrication of mems structures from fused silica for inertial sensors | |
| CN104716924A (en) | Graphene resonator and manufacturing method thereof | |
| CN116539261A (en) | Assessment method and measurement structure for energy loss of quartz glass wafer and preparation method thereof | |
| Jaakkola et al. | Piezoelectrically transduced single-crystal-silicon plate resonators | |
| CN107601424B (en) | A kind of MEMS based on face interior resonance sticks density sensor chip and preparation method thereof | |
| CN107271326B (en) | A kind of MEMS fluid density sensor chip and preparation method thereof based on face interior resonance | |
| CN103217228A (en) | Temperature sensor based on capacitive micromachined ultrasonic transducer (CMUT) and preparation and application method of temperature sensor | |
| CN105241795A (en) | Atmospheric particle concentration detection device and detection method | |
| CN112751544A (en) | Micromechanical resonator with anchor point auxiliary structure and preparation method thereof | |
| CN108982291B (en) | Comb-tooth-type CMUTs fluid density sensor and preparation method thereof | |
| CN116743107A (en) | MEMS planar resonator and preparation method thereof | |
| JP2011108680A (en) | Method of manufacturing multilayer substrate, method of manufacturing diaphragm, and method of manufacturing pressure sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |