CN116742355A - Ku wave band energy selection surface - Google Patents
Ku wave band energy selection surface Download PDFInfo
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- CN116742355A CN116742355A CN202310642098.XA CN202310642098A CN116742355A CN 116742355 A CN116742355 A CN 116742355A CN 202310642098 A CN202310642098 A CN 202310642098A CN 116742355 A CN116742355 A CN 116742355A
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- 239000002184 metal Substances 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 230000003044 adaptive effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/0056—Casings specially adapted for microwave applications
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The application discloses a Ku wave band energy selection surface, which relates to the technical field of strong electromagnetic pulse protection and solves the technical problem of lack of research on the Ku wave band working energy selection surface.
Description
Technical Field
The application relates to the technical field of strong electromagnetic pulse protection, in particular to a Ku wave band energy selection surface.
Background
As electronic devices continue to evolve toward low power, low energy, and high integration, however, the operational performance thereof improves, and at the same time, the sensitivity of the electronic devices to high power microwaves increases, resulting in interference, degradation, damage, and destruction. Thus, strong electromagnetic interference from nature and man-made poses a great threat to both military and civil equipment.
The way of strong electromagnetic pulse coupling into electronic equipment is a front door coupling mode and a back door coupling mode, so that the protection mode is divided into two directions, the protection for the back door coupling mode comprises traditional electromagnetic compatibility protection means such as shielding, filtering, grounding and the like, and the protection for the front door coupling mode mainly comprises a limiter, a frequency selection surface and the like. The limiter is arranged in the circuit, plays a role in short-circuit protection when high current caused by high power arrives, but has a certain resistance-capacitance and has limited protection. The frequency selective surface acts as a spatial limiter, which is capable of masking high power signals outside the passband, but without protecting signals within the passband.
The energy selection surface has been studied as an adaptive spatial filter that can function as a nonlinear transmission, adjusting the transmission capacity according to the intensity of electromagnetic waves in space. However, the research is mainly focused below the X-band, and more research is conducted in the L-band and S-band.
From the standpoint of the operating band, there is no energy selection surface for Ku band operation for a while in the published studies. The application of millimeter waves is very wide at present, the requirements of the energy selection surface of the Ku wave band on parameters such as a switch element, physical processing and the like are higher, and a novel design idea is needed. Therefore, the Ku band energy selection surface is valuable and innovative in both theoretical research and practical engineering applications.
Disclosure of Invention
The application provides a Ku wave band energy selection surface, which aims to realize energy selection and frequency selection of Ku wave band operation.
The technical aim of the application is realized by the following technical scheme:
the Ku wave band energy selection surface comprises a medium substrate, wherein the upper surface of the medium substrate is printed with periodically arranged metal square ring gap units, and the lower surface of the medium substrate is printed with periodically arranged metal cross units; the metal square ring gap unit comprises a square metal outer ring and a square metal sheet, gaps exist between the square metal outer ring and the square metal sheet, all sides of the square metal outer ring and the square metal sheet are parallel, bonding pads are correspondingly arranged at the middle positions of all sides of the square metal outer ring, which are close to the square metal sheet, and PIN diodes are arranged between the corresponding bonding pads; and a metal via hole is arranged at the center of the square metal sheet and is connected with the metal cross unit.
Further, the square metal outer rings of the adjacent metal square ring slit units are connected with each other.
Further, adjacent metal cross units are connected to each other.
Further, the gap width between the square metal outer ring and the square metal sheet is 1mm.
Further, bias voltage is externally applied between the square metal outer ring and the square metal sheet so as to adjust the conduction threshold of the PIN diode.
Further, the on-off of the PIN diode is controlled by coupling voltage induced by electromagnetic signals in the space between the square metal outer ring and the square metal sheet.
The application has the beneficial effects that:
(1) The application has the dual characteristics of frequency selection and energy selection, has a spatial filtering function on a frequency domain, and is expressed as a Ku wave band spatial filter, and a passband is arranged on the Ku wave band; and appears as an adaptive energy selection means in the energy domain.
(2) The application can sense the intensity of electromagnetic waves in space and adaptively change the transmission characteristics: when the electric field intensity in the space is smaller than the threshold value, the device provides a passband for operation in the Ku band, and signals can normally propagate to electronic equipment; when the energy is greater than the threshold, the operating band shifts and the signal is reflected.
(3) The application is applied to the front door coupling of the electronic equipment, and can adaptively protect the electronic equipment from being damaged by high-power microwaves.
Drawings
Fig. 1 is a schematic structural diagram of a Ku band energy selective surface provided in an embodiment of the present application;
FIG. 2 is a schematic diagram of a metal square ring slit unit according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a Ku band energy selection surface equivalent circuit model;
FIG. 4 is a schematic diagram of transmission parameters of the Ku band energy selection surface when the PIN diode is turned off and on;
in the figure: 1-a square metal outer ring; 2-square metal sheets; 3-metal cross units; 101,102,103,104,201,202,203,204-pads; 401,402,403,404-PIN diodes; 5-a dielectric substrate; 205-metal vias.
Detailed Description
The technical scheme of the application will be described in detail with reference to the accompanying drawings.
As shown in fig. 1, in an embodiment of the present application, a Ku band energy selecting surface is provided, which includes a dielectric substrate, and the upper surface and the lower surface of the dielectric substrate are printed with periodically arranged metal structures, specifically: the upper surface is printed with metal square ring gap units which are arranged periodically, and the lower surface is printed with metal cross units which are arranged periodically.
As shown in fig. 2, the metal square ring gap unit includes a square metal outer ring 1 and a square metal sheet 2, gaps exist between the square metal outer ring 1 and the square metal sheet 2, each side of the square metal outer ring 1 and each side of the square metal sheet 2 are parallel, bonding pads (101,102,103,104,201,202,203,204) are correspondingly arranged at the middle positions of each side of the square metal outer ring 1 close to the square metal sheet 2 and each side of the square metal sheet 2 close to the square metal outer ring 1, and PIN diodes (401, 402,403, 404) are arranged between the corresponding bonding pads; a metal via hole 205 is arranged at the center of the square metal sheet 2, and the metal via hole 205 is connected with the metal cross unit 3. The metal structures of both the upper and lower surfaces are attached to the dielectric substrate 5.
The square metal sheet 2 is arranged at the center of the square metal outer ring 1, and a certain gap is reserved between the square metal sheet 2 and the square metal outer ring 1. As shown in fig. 2, in the upper surface structure, the square metal outer rings 1 in adjacent metal square ring slit units are connected together, i.e., the period of the square metal outer rings is as large as the period of the metal square ring slit units.
In one embodiment of the present application, the PIN diode is DSG95000 of Skyworks company; the dielectric substrate is RT/duroid5880, the dielectric constant is 2.2, and the thickness d is 0.254mm.
The length of the bonding pads on the square metal outer ring 1 and the square metal sheet 2 is 0.5mm, and the width is 0.3mm. The gap w between the square metal outer ring 1 and the square metal sheet 2 is 1mm, and detailed parameter values of other structures of the metal square ring gap unit are given in table 1, wherein p represents the side length of the square metal outer ring 1, a represents the side length of the square metal sheet 2, and w represents the gap width between the square metal outer ring 1 and the square metal sheet 2.
Table 1 (Unit: mm)
| p | a | w |
| 13.05 | 4 | 1 |
Because PIN diodes are loaded in mutually perpendicular directions, the high-power electromagnetic wave with various polarization directions has certain protective force.
The application utilizes the switching characteristic of the PIN diode to the radio frequency signal to realize the self-adaptive protection to the strong electromagnetic wave. The PIN diode, when turned on, is equivalent to a very small resistance (about 5 ohms) that is shorted to the radio frequency signal. The PIN diode is turned off, equivalently a capacitance having a value on the order of picofarads, and is open for radio frequency signals.
The application controls the on-off of the PIN diode by inducing the voltage of the space electromagnetic wave between the square metal outer ring and the square metal sheet, thereby changing the transmission characteristic of the energy selection surface.
When the field intensity of electromagnetic waves in the space is smaller, the PIN diode is in a cut-off state, the PIN diode is equivalent to a capacitor, the capacitor is also equivalent between the square metal outer ring and the square metal sheet, and the square metal outer ring and the square metal sheet are equivalent to an inductor; the square metal outer ring and the square metal sheet, the PIN diode generates a parallel LC resonance in the Ku wave band, and electromagnetic wave energy freely permeates at the resonance point, namely the passband of the Ku wave band energy selection surface; the position of the resonance point is determined by the equivalent capacitance value of the PIN diode and the size of the metal square ring gap unit.
When the electromagnetic field intensity in the space is larger, the voltage induced at the two ends of the PIN diode is gradually increased, so that the PIN diode is gradually conducted from a cut-off state; at this time, the resonance point moves towards high frequency, the signal passband of the working frequency band is closed, and self-adaptive protection of high-power microwaves is realized.
The application has the innovation that although the equivalent capacitance of the PIN diode is larger, the signal passband of the Ku wave band cannot be directly generated, the equivalent capacitance generated by the metal structure forms a series connection relationship with the PIN diode, so that the equivalent capacitance of the whole circuit is greatly reduced, the signal passband of the Ku wave band is realized by utilizing the PIN diode with larger junction capacitance, and the energy selection function is further realized.
The equivalent circuit model corresponding to the present application is shown in fig. 3. Wherein Ce represents the equivalent capacitance generated by the square metal outer ring and the square metal sheet, le represents the equivalent inductance generated by the square metal outer ring and the square metal sheet, and Cp and Rp represent the equivalent capacitance and the equivalent resistance of the PIN diode in the off and on states, respectively. When the device is in a wave-transparent state, ce, cp and Le form a parallel resonator to generate a signal passband of a Ku wave band, and the electronic equipment works normally; in the protected state, the resonance point of the resonator formed by Ce and Ls moves toward a high frequency, the shielding efficiency of the original operating frequency point of Ku band increases, and the signal is reflected.
The adjustment of the resonance point position can be realized by changing the period length of the metal square ring gap unit, the gap between the square metal outer ring and the square metal sheet, the size of the square metal sheet and the PIN diode model.
In a specific embodiment of the present application, the transmission parameters of the Ku band energy selective surface in the protected state and the wave-transparent state are shown in fig. 4. As can be derived from fig. 4, in the protection state and the wave-transparent state, the transmission coefficients differ by 18dB at the center frequency point. When the energy protection surface is in a wave-transparent state, the energy protection surface has a signal passband with a center frequency of 15GHz, the transmission coefficient is smaller than 1dB, and the electromagnetic wave passes through normally with low loss. When the energy selection surface is in a protection state, the passband is closed, the transmission coefficient is less than 18dB, and the electromagnetic wave is reflected.
The PIN diode in the present application may be replaced with other high frequency diodes having switching characteristics.
The above is only a preferred embodiment of the present application, and the protection scope of the present application is not limited to the above examples, and all technical solutions belonging to the concept of the present application belong to the protection scope of the present application. It should be noted that modifications and adaptations to the application without departing from the principles thereof are intended to be within the scope of the application as set forth in the following claims.
Claims (6)
1. The Ku wave band energy selection surface comprises a dielectric substrate, and is characterized in that the upper surface of the dielectric substrate is printed with periodically arranged metal square ring gap units, and the lower surface of the dielectric substrate is printed with periodically arranged metal cross units; the metal square ring gap unit comprises a square metal outer ring and a square metal sheet, gaps exist between the square metal outer ring and the square metal sheet, all sides of the square metal outer ring and the square metal sheet are parallel, bonding pads are correspondingly arranged at the middle positions of all sides of the square metal outer ring, which are close to the square metal sheet, and PIN diodes are arranged between the corresponding bonding pads; and a metal via hole is arranged at the center of the square metal sheet and is connected with the metal cross unit.
2. The Ku band energy selective surface of claim 1, wherein the square metal outer rings of adjacent metal square ring slit cells are interconnected.
3. The Ku band energy selective surface of claim 1, wherein adjacent metal cross-cells are interconnected.
4. The Ku band energy selective surface of claim 1, wherein a gap width between said square metal outer ring and said square metal sheet is 1mm.
5. The Ku-band energy selective surface of claim 1 or 4, wherein a bias voltage is applied between the square outer metal ring and the square metal sheet to adjust the turn-on threshold of the PIN diode.
6. The Ku-band energy selective surface of claim 1 or 4, wherein the PIN diode is controlled to be turned on or off by a coupling voltage induced by an electromagnetic signal in a space between the square metal outer ring and the square metal sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310642098.XA CN116742355A (en) | 2023-06-01 | 2023-06-01 | Ku wave band energy selection surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310642098.XA CN116742355A (en) | 2023-06-01 | 2023-06-01 | Ku wave band energy selection surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116742355A true CN116742355A (en) | 2023-09-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310642098.XA Pending CN116742355A (en) | 2023-06-01 | 2023-06-01 | Ku wave band energy selection surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116742355A (en) |
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2023
- 2023-06-01 CN CN202310642098.XA patent/CN116742355A/en active Pending
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