CN116736584A - Transmission type high damage threshold light addressing spatial light modulator - Google Patents
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- CN116736584A CN116736584A CN202310794667.2A CN202310794667A CN116736584A CN 116736584 A CN116736584 A CN 116736584A CN 202310794667 A CN202310794667 A CN 202310794667A CN 116736584 A CN116736584 A CN 116736584A
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- 230000005540 biological transmission Effects 0.000 title claims abstract description 11
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 66
- 239000013078 crystal Substances 0.000 claims abstract description 42
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 29
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000010287 polarization Effects 0.000 claims abstract description 17
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 12
- 239000010980 sapphire Substances 0.000 claims abstract description 12
- 238000003384 imaging method Methods 0.000 claims abstract description 8
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 6
- 125000006850 spacer group Chemical group 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- 239000010408 film Substances 0.000 description 16
- 210000002858 crystal cell Anatomy 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- DQUIAMCJEJUUJC-UHFFFAOYSA-N dibismuth;dioxido(oxo)silane Chemical compound [Bi+3].[Bi+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O DQUIAMCJEJUUJC-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000004993 liquid crystal window Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133796—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers having conducting property
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/135—Liquid crystal cells structurally associated with a photoconducting or a ferro-electric layer, the properties of which can be optically or electrically varied
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/135—Liquid crystal cells structurally associated with a photoconducting or a ferro-electric layer, the properties of which can be optically or electrically varied
- G02F1/1357—Electrode structure
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Liquid Crystal (AREA)
Abstract
A transmission type high damage threshold light addressing spatial light modulator comprises a photosensitive light generating unit, a dichroic mirror and a liquid crystal unit; the liquid crystal unit comprises a gas basal layer, discharge gas, a discharge electrode, a photoconductive crystal layer, a liquid crystal orientation layer, a liquid crystal layer, a transparent conductive layer containing a substrate, a liquid crystal spacer and an alternating voltage source, the photosensitive light generating unit comprises a photosensitive light collimation output light source, a polarization cube, an electric addressing spatial light modulator and an imaging lens, the alternating voltage source is connected between the discharge electrode and the transparent conductive layer containing the substrate, the photoconductive crystal layer is used as the basal layer of the discharge gas and the first liquid crystal orientation layer, and the transparent conductive layer containing the substrate is a sapphire substrate plated with a gallium nitride film layer, a gallium nitride crystal, a gallium oxide crystal or the like. The invention makes the light addressing spatial light modulator work in a transmission mode, avoids the technological difficulties of light guide film processing, compact combination of conductive materials and light guide film, and the like, and realizes the high damage threshold characteristic of the device.
Description
Technical Field
The invention belongs to the field of liquid crystal devices, and particularly relates to a transmission type high-damage-threshold light addressing spatial light modulator.
Background
The liquid crystal spatial light modulator is used as an active light field regulating device, and can realize real-time and flexible control on the amplitude, phase or polarization state of laser. As a programmable and remotely controllable device, the device can realize the intelligent and programmable control of laser beams by being connected with a related control unit, so that the device is applied to the fields of inertial confinement fusion, laser processing, laser additive manufacturing and the like. In the field of inertial confinement fusion, large-scale laser devices such as an NIF device, a French LMJ device, a China magic light series device and the like realize beam homogenization through a spatial light modulator so as to improve the running flux of the device, realize damage point shielding so as to prolong the service life of a large-caliber element and further reduce the running and maintenance cost of the device. In the fields of laser processing and additive manufacturing, the shape of a light spot is flexibly regulated and controlled through a spatial light modulator, and the processing and manufacturing efficiency is improved.
Liquid crystal spatial light modulators are currently mainly classified into two types, optical addressing and electrical addressing. Compared with an electric addressing spatial light modulator, the optical addressing spatial light modulator has the advantages of high transmittance, high filling factor, simple processing technology and the like, can effectively avoid the problems of black grid effect and the like, and realizes high-fidelity optical field regulation without any additional distortion.
In practical application, the requirement of the continuous improvement of laser energy on the damage threshold of the liquid crystal spatial light modulator is also higher and higher. The damage threshold bottleneck of the spatial light modulator is mainly the conductive film layer, the subject group has previously proposed that the transparent conductive layer uses gallium nitride material, and the irradiation of modulated laser to the conductive film on the side of the light guide crystal is avoided by designing a reflective structure, and the overall laser damage threshold of the light addressing liquid crystal spatial light modulator is improved by utilizing the higher laser damage threshold of the gallium nitride material. However, the reflective device has high requirements on the residual reflectivity coating film of the liquid crystal window substrate and the flatness processing precision, and is easy to have the problems of large spectral distortion, large wavefront distortion and the like.
Patent document CN114594633a discloses a high laser damage threshold transmission type optically addressed liquid crystal spatial light modulator for shaping 1053nm linearly polarized light beam, which structurally comprises a computer controlled LCoS type electrically addressed spatial light modulator, a 1053nm linearly polarized readout light incident window, a writing light LED collimation light source, a dichroic mirror, a polarization beam splitter, a polarizer, a liquid crystal cell, an alternating current stabilized voltage supply, a polarization analyzer, and a 1053nm linearly polarized readout light exit window, wherein the liquid crystal cell is composed of a transparent conductive film substrate layer, a transparent conductive layer, a liquid crystal alignment layer, an alignment seed, a liquid crystal layer, and a photoconductive layer. According to the invention, the gallium nitride material is used as a transparent conducting layer material, and the zinc oxide film is used as a photoconductive material, so that the damage threshold value of high-energy laser is improved compared with a liquid crystal box used by the existing liquid crystal spatial light modulator, and the application of beam shaping in a high-power laser device is facilitated; compared with a reflective high-damage spatial light modulator, the black grid effect is avoided, and the structure is simplified. However, the zinc oxide film needs to be processed on the gallium nitride material, which relates to the processing of a photoconductive zinc oxide film layer on one hand and the high compact combination of the zinc oxide material and the gallium nitride material on the other hand, and has certain processing difficulty in terms of the current domestic and foreign technological level.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a transmission type high damage threshold light addressing spatial light modulator. Based on the thought of the plasma electrode in the prior art and combined with the device structure of the light addressing spatial light modulator, the photoconductive crystal is used as a liquid crystal orientation layer and a basal layer of the plasma electrode (discharge gas) by reasonably designing the relative position of the photoconductive crystal in the spatial light modulator. Not only can the optically addressed spatial light modulator operate in a transmissive mode, but also the high damage threshold characteristics of the device are achieved.
The technical scheme of the invention is as follows:
the structure of the light-sensitive light generation unit comprises a light-sensitive light collimation output light source, a polarization cube, an electric addressing spatial light modulator and an imaging lens, wherein the discharge electrode and the transparent conductive layer containing a substrate are connected with the alternating voltage source.
The light guide crystal layer is used as the base layer of the discharge gas and the first liquid crystal orientation layer, the transparent conductive layer containing the base is a sapphire substrate plated with a gallium nitride film layer or a gallium nitride crystal or a gallium oxide crystal, the collimated light emitted by the photosensitive light collimation output light source is sequentially transmitted by a polarization cube, reflected by an electric addressing spatial light modulator, reflected by the polarization cube and transmitted by an imaging lens and then output, and the patterned photosensitive light emitted by the patterned photosensitive light generation unit is sequentially reflected by the dichroic mirror, transmitted by the gas base layer and the discharge gas and then imaged on the light guide crystal layer.
The output light center wavelength of the photosensitive light collimation output light source is in the range of 350nm-500 nm.
The light passing size of the polarization cube is larger than the output light spot size of the photosensitive light collimation output light source.
The electrically addressed spatial light modulator is a reflective amplitude type electrically addressed spatial light modulator.
The dichroic mirror has a reflectivity of >95% when the output light of the patterned photosensitive light generating unit is incident at 45 degrees, and a transmittance of >95% when the output light of the patterned photosensitive light generating unit is incident at 45 degrees.
The discharge gas may be helium, neon, argon or a mixed gas.
The thickness of the photoconductive crystal layer is more than 0.5mm, and the photoconductive crystal layer has no or very small absorption to the modulated laser wave band; when the photoconductive crystal layer is irradiated by a light beam with the wavelength ranging from 350nm to 500nm, the conductivity of the material decreases with the increase of the irradiation light intensity.
In summary, the advantages and features of the invention are as follows:
1) The invention designs a transmission type high damage threshold light addressing spatial light modulator by replacing a conductive film on the side of a photoconductive crystal with a plasma electrode (discharge gas) and enabling the photoconductive crystal to be used as a basal layer of the discharge gas and a liquid crystal orientation layer on the basis that gallium nitride or gallium oxide materials are used for a transparent conductive layer and the overall laser damage threshold of the light addressing liquid crystal spatial light modulator is improved by utilizing the higher laser damage threshold of the gallium nitride or gallium oxide materials.
2) The prior patent realizes the transmission type high damage threshold spatial light modulator by processing a zinc oxide film on a gallium nitride material and respectively utilizing a zinc oxide film layer and the gallium nitride material as a light guiding layer and a conductive layer. The invention not only enables the optical addressing spatial light modulator to work in a transmission mode, but also avoids the processing difficulties of zinc oxide film processing with photoconductive performance, high-density combination of the zinc oxide film and gallium nitride material, and the like, and simultaneously realizes the high damage threshold characteristic of the device.
3) Compared with a reflective structure, the transmissive structure provided by the invention has the advantages of small spectral distortion, small wavefront distortion and the like.
Drawings
FIG. 1 is a schematic diagram of a transmissive high damage threshold optically addressed spatial light modulator of the present invention;
fig. 2 is a schematic structural view of an embodiment of a patterned photosensitive light generating unit 1 according to the present invention;
FIG. 3 is a schematic diagram showing the structure of an embodiment of a liquid crystal cell 3 according to the present invention;
in the figure, a 1-patterned photosensitive light generating unit, a 1 a-photosensitive light collimating output light source, a 1 b-polarizing cube, a 1 c-electrically addressed spatial light modulator, a 1 d-imaging lens, a 2-dichroic mirror, a 3-liquid crystal cell, a 3 a-gas base layer, a 3 b-discharge gas, a 3 c-discharge electrode, a 3 d-photoconductive crystal layer, a 3 e-first liquid crystal alignment layer, a 3 f-liquid crystal layer, a 3 g-second liquid crystal alignment layer, a 3 h-substrate-containing transparent conductive layer, a 3 i-liquid crystal spacer, and a 3 j-alternating voltage source.
Detailed Description
The invention is further illustrated in the following examples and figures, which should not be taken to limit the scope of the invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a transmissive high damage threshold light addressing spatial light modulator according to the present invention, and as can be seen from the figure, the transmissive high damage threshold light addressing spatial light modulator according to the present invention includes a patterned photosensitive light generating unit 1, a dichroic mirror 2, and a liquid crystal unit 3.
Fig. 2 is a schematic structural diagram of an embodiment of a patterned photosensitive light generating unit 1 in the present invention, as shown in the drawing, the photosensitive light generating unit 1 includes a photosensitive light collimating output light source 1a, a polarizing cube 1b, an electrically addressed spatial light modulator 1c, and an imaging lens 1d. The collimated light emitted by the photosensitive light collimation output light source 1a is transmitted through the polarization cube 1b, reflected by the electric addressing spatial light modulator 1c, reflected by the polarization cube 1b and transmitted by the imaging lens 1c in sequence, and then patterned photosensitive light is output. The photosensitive light collimation output light source 1a in the embodiment comprises a blue light LED and a collimation lens group, the center wavelength of output light can be set near 460nm, and the output light spot size is smaller than phi 20mm. Polarization cube 1b was a polarization beam splitting cube model PBS251 from Thorlabs. The electrically addressed spatial light modulator 1c is a reflective amplitude type electrically addressed spatial light modulator, and may be an LCOS type spatial light modulator manufactured by the companies such as bingo japan, BNS in the united states, or UPOLABS in china.
Fig. 3 is a schematic structural diagram of an embodiment of a liquid crystal cell 3 according to the present invention, where the liquid crystal cell 3 includes a gas base layer 3a, a discharge gas 3b, a discharge electrode 3c, a photoconductive crystal layer 3d, a first liquid crystal alignment layer 3e, a liquid crystal layer 3f, a second liquid crystal alignment layer 3g, a transparent conductive layer 3h containing a substrate, and an ac voltage source 3j, and the ac voltage source 3j is connected between the discharge electrode 3c and the transparent conductive layer 3h containing a substrate.
The photoconductive crystal layer 3d is used as a base layer of the discharge gas 3b and the first liquid crystal alignment layer 3e, and the transparent conductive layer 3h containing the base is a sapphire substrate or a gallium nitride crystal or a gallium oxide crystal plated with a gallium nitride thin film layer.
The patterned photosensitive light emitted by the patterned photosensitive light generating unit 1 is reflected by the dichroic mirror 2, transmitted by the gas base layer 3a and the discharge gas 3b, and imaged on the photoconductive crystal layer 3d. The space between the gas base layer 3a and the photoconductive crystal layer 3d is filled with the discharge gas 3b.
The reflectivity of the dichroic mirror 2 for 45-degree incident light beams in the 460nm wave band is higher than 99%.
The gas base layer 3a can be a double-sided anti-reflection K9 substrate, a quartz substrate or a sapphire substrate, and the thickness can be 3mm.
The discharge gas 3b may be helium, neon, argon or a mixed gas.
The discharge electrode 3c may be aluminum, iron, silver or an alloy.
The photoconductive crystal layer 3d can be 1mm thick bismuth silicate single crystal or bismuth germanate single crystal, and is subjected to double-sided anti-reflection treatment.
The first liquid crystal alignment layer 3e may be a polyimide material or an SD1 material.
The second liquid crystal alignment layer 3g may be a polyimide material or an SD1 material.
The thickness d of the liquid crystal layer 3f is controlled by the liquid crystal spacers 3 i. When the optically addressed spatial light modulator is of the amplitude type, the liquid crystal layer 3f operates in a twisted nematic mode, and the thickness d of the liquid crystal layer and the birefringence Δn of the liquid crystal satisfy:when the optical addressing spatial light modulator is phase type and the phase modulation capability is required to be more than or equal to +.>When the liquid crystal layer 3f is operated in a nematic mode, the thickness d of the liquid crystal layer and the birefringence delta n of the liquid crystal satisfy the following conditions: />
The transparent conductive layer 3h containing the substrate may be one of the following four types:
(1) Sapphire substrate plated with silicon-doped gallium nitride (n-doped) thin film layer with silicon-doped gallium nitride carrier concentration of 1×10 18 cm -3 ～1×10 19 cm -3 The thickness of the gallium nitride film layer is 5um, and the thickness of the sapphire substrate is 0.3 mm-0.5 mm.
(2) Sapphire substrate plated with magnesium-doped gallium nitride (p-doped) thin film layer with carrier concentration of 1×10 18 cm -3 ～1×10 19 cm -3 The thickness of the gallium nitride film layer is 5um, and the thickness of the sapphire substrate is 0.3 mm-0.5 mm.
(3) The thickness of the silicon-doped gallium nitride crystal is 1 mm-3 mm.
(4) The thickness of the magnesium-doped gallium nitride crystal is 1 mm-3 mm.
The effective value V of the voltage of the alternating voltage source 3j RMS The voltage amplitude and the frequency are adjustable between 10V and 100V, and the frequency is between 50Hz and 1000 Hz.
For the liquid crystal cell 3, the gas base layer 3a serves as one of the bases of the discharge gas 3b, while the photoconductive crystal layer 3d serves as the other base of the discharge gas 3b on the one hand and as the base layer of the liquid crystal layer 3f on the other hand. The total voltage generated by the ac voltage source 3j is applied to the photoconductive crystal layer 3d and the liquid crystal layer 3f (the first liquid crystal alignment layer 3e and the second liquid crystal alignment layer 3g are thin and have negligible partial pressure), and the photoconductive crystal layer 3d and the liquid crystal layer 3f are in a series structure. The resistance distribution generated on the photoconductive crystal layer 3d corresponds to the beam intensity distribution of the patterned photosensitive light emitted from the unit 1. Therefore, the voltage distribution of the liquid crystal layer 3f corresponds to the beam intensity distribution of the patterned photosensitive light emitted from the cell 1. When the polarization analyzer is located in the subsequent optical path, the liquid crystal unit 3 can generate a predetermined spatial transmittance or phase distribution.
Example 1
The wavelength of the modulated laser light was 1053nm and the optically addressed spatial light modulator was amplitude type.
The photosensitive light generating unit 1 is designed as described above.
The dichroic mirror 2 is designed as follows:
the dichroic mirror 2 has a reflectance of light in a 460nm band at 45 degrees higher than 99%, and a transmittance of light in a center wavelength 1053nm and a spectral width ±50nm at 45 degrees higher than 99%.
The liquid crystal cells 3 are each designed as follows:
the gas basal layer 3a is a double-sided anti-reflection K9 substrate, and the thickness can be selected to be 3mm;
the discharge gas 3b is helium;
the discharge electrode 3c is iron;
the photoconductive crystal layer 3d is 1mm thick bismuth silicate monocrystal and is subjected to double-sided anti-reflection treatment;
the first liquid crystal alignment layer 3e and the second liquid crystal alignment layer 3g are both polyimide alignment materials;
the liquid crystal layer 3f has a birefringence of Δn=0.2 and a thickness d=4.56 μm;
the transparent conductive layer 3h containing the base is a sapphire substrate plated with a silicon-doped gallium nitride (n-type doped) thin film layer, and the carrier concentration of the silicon-doped gallium nitride is 1 multiplied by 10 18 cm -3 ～1×10 19 cm -3 The thickness of the gallium nitride film layer is 5um, and the thickness of the sapphire substrate is 0.5mm.
Example 2
The difference from embodiment 1 is that when the wavelength of the modulated laser light is 1.5um and the optically addressed spatial light modulator is amplitude type:
the dichroic mirror 2 has a reflectance of light of 460nm band higher than 99% at 45 degrees, a transmittance of light of 1.5um at a center wavelength of 45 degrees, and a spectral width + -50 nm higher than 99%.
The gas base layer 3a is a double-sided anti-reflection sapphire substrate, and the thickness can be selected to be 3mm.
The liquid crystal layer 3f has a birefringence of Δn=0.2 and a thickness d=6.50 μm;
the transparent conductive layer 3h containing the substrate is silicon-doped gallium nitride crystal, and the thickness is 1mm.
Example 3
When the wavelength of the modulated laser is 1.053um and the optical addressing spatial light modulator is phase type, the requirement of the phase modulation capability is more than or equal to lambda, the difference with the embodiment 1 is that:
the liquid crystal layer 3f has a birefringence of Δn=0.2 and a thickness d=5.27 μm.
Claims (7)
1. A transmission type high damage threshold light addressing spatial light modulator comprises a patterned photosensitive light generating unit (1), a dichroic mirror (2) and a liquid crystal unit (3); it is characterized in that the method comprises the steps of,
the liquid crystal unit (3) comprises a gas basal layer (3 a), discharge gas (3 b), a discharge electrode (3 c), a photoconductive crystal layer (3 d), a first liquid crystal orientation layer (3 e), a liquid crystal layer (3 f), a second liquid crystal orientation layer (3 g), a transparent conductive layer (3 h) containing a substrate, a liquid crystal spacer (3 i) and an alternating voltage source (3 j), the discharge electrode (3 c) and the transparent conductive layer (3 h) containing the substrate are connected with the alternating voltage source (3 j),
the photoconductive crystal layer (3 d) is respectively used as a basal layer of the discharge gas (3 b) and the first liquid crystal orientation layer (3 e), and the transparent conductive layer (3 h) containing the basal layer is a sapphire substrate or gallium nitride crystal or gallium oxide crystal plated with a gallium nitride film layer;
the patterned photosensitive light emitted by the patterned photosensitive light generating unit (1) is reflected by the dichroic mirror (2), and is transmitted by the gas basal layer (3 a) and the discharge gas (3 b) to be imaged on the photoconductive crystal layer (3 d).
2. The transmission-type high-damage-threshold light addressing spatial light modulator according to claim 1, wherein the photosensitive light generating unit (1) comprises a photosensitive light collimation output light source (1 a), a polarization cube (1 b), an electric addressing spatial light modulator (1 c) and an imaging lens (1 d), and the collimation light emitted by the photosensitive light collimation output light source (1 a) is sequentially transmitted through the polarization cube (1 b), reflected by the electric addressing spatial light modulator (1 c), reflected by the polarization cube (1 b) and transmitted by the imaging lens (1 d) and then output.
3. The transmissive high damage threshold optically addressed spatial light modulator of claim 2, wherein: the output light center wavelength of the photosensitive light collimation output light source (1 a) is in the range of 350-500 nm, and the light passing size of the polarization cube (1 b) is larger than the output light spot size of the photosensitive light collimation output light source (1 a).
4. The transmissive high damage threshold optically addressed spatial light modulator of claim 2, wherein: the electrically addressed spatial light modulator (1 c) is a reflective amplitude type electrically addressed spatial light modulator.
5. The transmissive high damage threshold optically addressed spatial light modulator of claim 1, wherein: the dichroic mirror (2) has a reflectivity of >95% for the output light of the patterned photosensitive light generating unit (1) of 45 degrees and a transmittance of >95% for the modulated laser band when it is incident at 45 degrees.
6. The transmissive high damage threshold optically addressed spatial light modulator of claim 1, wherein: the discharge gas (3 b) may be helium, neon, argon or a mixed gas.
7. The transmissive high damage threshold optically addressed spatial light modulator of claim 1, wherein: the thickness of the photoconductive crystal layer (3 d) is more than 0.5mm, and the photoconductive crystal layer has no or little absorption to the modulated laser wave band; when the photoconductive crystal layer (3 d) is irradiated by a light beam with the wavelength ranging from 350nm to 500nm, the conductivity of the material decreases with the increase of the irradiation light intensity.
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