CN116735032A - Temperature sensing circuit based on double-loop clamping structure - Google Patents
Temperature sensing circuit based on double-loop clamping structure Download PDFInfo
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- CN116735032A CN116735032A CN202310543000.5A CN202310543000A CN116735032A CN 116735032 A CN116735032 A CN 116735032A CN 202310543000 A CN202310543000 A CN 202310543000A CN 116735032 A CN116735032 A CN 116735032A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K13/00—Thermometers specially adapted for specific purposes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
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Abstract
The embodiment of the specification provides a temperature sensing circuit based on a double-loop clamping structure, which comprises a reference voltage generating circuit, a reference current generating circuit, a PTAT temperature sensing voltage generating circuit and a CTAT temperature sensing voltage generating circuit; the reference voltage generation circuit is connected with the reference current generation circuit and is used for generating a reference voltage; the reference current generating circuit is of a double-loop clamping structure and comprises two operational amplifiers which are respectively connected to two ends of a resistor, and is used for clamping voltages at the two ends of the resistor to generate reference current through the resistor; the PTAT temperature-sensing voltage generating circuit and the CTAT temperature-sensing voltage generating circuit are biased through reference current, and the PTAT temperature-sensing voltage generating circuit and the CTAT temperature-sensing voltage generating circuit adopt diode stacking structures to realize the first-order temperature coefficient doubling of the PTAT voltage and the CTAT voltage. The invention improves the resolution of the temperature sensing circuit, reduces the circuit area and reduces the power consumption of the temperature sensing circuit.
Description
Technical Field
The present document relates to the field of integrated circuits, and in particular, to a temperature sensing circuit based on a dual-loop clamping structure.
Background
Since high temperature can adversely affect the performance of IC components, it is very important to be able to effectively monitor the temperature of an operating circuit in an integrated circuit, and with the rapid development of the integrated circuit industry in China, the technology of detecting temperature by using an integrated circuit is becoming mature, and the variety of temperature sensors is increasing, but challenges in many aspects still face.
At present, the existing temperature sensing circuit of the temperature sensor generally generates a voltage proportional to absolute temperature through a 2-T structure to generate a signal indicating temperature, and the structure can generate voltage with positive and negative temperature coefficients, but the first-order characteristic of the voltage is poor and limited by voltage redundancy, and the variation range of the voltage is small, so that the resolution is low, and therefore, the low-cost and high-performance temperature sensor has very wide market prospect.
Disclosure of Invention
One or more embodiments of the present specification provide a temperature sensing circuit based on a dual circuit clamping structure, the circuit including a reference voltage generating circuit, a reference current generating circuit, and a temperature sensing voltage generating circuit;
the reference voltage generation circuit is connected with the reference current generation circuit and is used for generating a reference voltage serving as an input voltage of the reference current generation circuit; the reference current generating circuit is of a double-loop clamping structure and comprises two operational amplifiers, the two operational amplifiers respectively form two feedback loops, and the two operational amplifiers are respectively connected to two ends of the resistor and clamp the voltages at the two ends of the resistor; the temperature sensing voltage generating circuit comprises a positive temperature coefficient PTAT temperature sensing voltage generating circuit and a negative temperature coefficient CTAT temperature sensing voltage generating circuit, the PTAT temperature sensing voltage generating circuit and the CTAT temperature sensing voltage generating circuit are respectively biased by reference currents and are connected with the two operational amplifiers, and the PTAT temperature sensing voltage generating circuit and the CTAT temperature sensing voltage generating circuit respectively adopt diode stacking structures to realize first-order temperature coefficient doubling of PTAT voltage and CTAT voltage.
Further, the reference voltage generating circuit comprises a plurality of PMOS tubes, the PMOS tubes are sequentially connected in series, and the reference voltage generating circuit is used for generating two reference voltages V REF1 And V REF2 Reference voltage V REF1 And V REF2 Respectively connected with two operational amplifier input endsAs the input voltage V of the operational amplifier REF1 、V REF2 。
Further, the operational amplifier is a secondary operational amplifier.
Further, the reference current generating circuit clamps the voltage V across the resistor by two operational amplifiers TOP 、V BOTTOM Input voltage V of the operational amplifier respectively equal to the two ends of the resistor REF1 、V REF2 Input voltage V through both ends of resistor TOP 、V BOTTOM Is calculated to produce a reference current.
Further, the CTAT temperature-sensing voltage generating circuit comprises two NMOS tubes M5 and M6 and first current mirrors M1 and M2, wherein the grid electrode of the first current mirror M1 is connected with the reference current generating circuit, and the grid electrode of the first current mirror M2 is connected with the NMOS tubes.
Further, the PTAT temperature-sensing voltage generation circuit comprises two PMOS tubes M7 and M8 and second current mirrors M3 and M4, wherein the drain electrode of the second current mirror M3 is connected with the reference current generation circuit, and the drain electrode of the second current mirror M4 is connected with the PMOS tubes.
Further, the first current mirror is configured to copy the reference current to a branch where the M2 is located through the M1, and provide bias currents for NMOS transistors M5 and M6 of the CTAT temperature-sensing voltage generating circuit, so that the M5 and M6 operate in a subthreshold region, and the M1 and M2 are PMOS transistors.
Further, the second current mirror is configured to copy the reference current to a branch where the M4 is located through the M3, and provide bias currents for NMOS transistors M7 and M8 of the PTAT temperature-sensing voltage generating circuit, so that the M7 and M8 operate in a subthreshold region, and the M3 and M4 are NMOS transistors.
Further, the NMOS transistors M5 and M6 of the CTAT temperature-sensing voltage generating circuit are connected in series, and the width-to-length ratios of the NMOS transistors M5 and M6 are the same.
Further, the PMOS tubes M7 and M8 of the PTAT temperature-sensing voltage generating circuit are connected in series, and the width-to-length ratios of M7 and M8 are the same.
The beneficial effects of the invention are as follows:
the reference voltage generating circuit adopts a diode stacking structure, so that the generated reference voltage hardly changes with temperature; the reference current generating circuit generates reference current through a double-loop clamping structure, fewer used branches are used, the power consumption is lower, and the temperature stability of the reference current is better; the high-gain operational amplifier in the double-loop current reference circuit enables the voltage at two ends of the resistor to be clamped to the reference voltage, so that the voltage difference on the resistor with the structure is reduced, and the overall power consumption of the circuit is reduced; biasing the temperature sensing MOS tube by using a reference current to enable the output voltage to have good first-order temperature characteristics, doubling the voltage temperature coefficient through MOS stacking, and improving the resolution of the temperature sensing circuit; the whole circuit completes temperature independent current and multi-temperature sensing signal output on only 4 branches, reduces the area required by the circuit and has high process compatibility.
The foregoing description is only an overview of the present invention, and is intended to be implemented in accordance with the teachings of the present invention in order that the same may be more clearly understood and to make the same and other objects, features and advantages of the present invention more readily apparent.
Drawings
For a clearer description of one or more embodiments of the present description or of the solutions of the prior art, the drawings that are necessary for the description of the embodiments or of the prior art will be briefly described, it being apparent that the drawings in the description that follow are only some of the embodiments described in the description, from which, for a person skilled in the art, other drawings can be obtained without inventive faculty.
Fig. 1 is a schematic diagram of a temperature sensing circuit based on a dual circuit clamping structure according to one or more embodiments of the present disclosure.
Detailed Description
In order to enable a person skilled in the art to better understand the technical solutions in one or more embodiments of the present specification, the technical solutions in one or more embodiments of the present specification will be clearly and completely described below with reference to the drawings in one or more embodiments of the present specification, and it is obvious that the described embodiments are only some embodiments of the present specification, not all embodiments. All other embodiments, which can be made by one or more embodiments of the present disclosure without inventive faculty, are intended to be within the scope of the present disclosure.
The embodiment of the invention provides a temperature sensing circuit based on a dual-loop clamping structure, and fig. 1 is a schematic diagram of the temperature sensing circuit based on the dual-loop clamping structure according to one or more embodiments of the present disclosure, as shown in fig. 1, the temperature sensing circuit based on the dual-loop clamping structure according to the embodiment of the present invention specifically includes: a reference voltage generation circuit, a reference current generation circuit, and a temperature-sensing voltage generation circuit;
the reference voltage generation circuit is connected with the reference current generation circuit and is used for generating a reference voltage serving as an input voltage of the reference current generation circuit; the reference current generating circuit is of a double-loop clamping structure and comprises two operational amplifiers, the two operational amplifiers respectively form two feedback loops, and the two operational amplifiers are respectively connected to two ends of the resistor and clamp the voltages at the two ends of the resistor; the temperature sensing voltage generating circuit comprises a positive temperature coefficient PTAT temperature sensing voltage generating circuit and a negative temperature coefficient CTAT temperature sensing voltage generating circuit, the PTAT temperature sensing voltage generating circuit and the CTAT temperature sensing voltage generating circuit are respectively biased by reference currents and are connected with the two operational amplifiers, and the PTAT temperature sensing voltage generating circuit and the CTAT temperature sensing voltage generating circuit respectively adopt diode stacking structures to realize first-order temperature coefficient doubling of PTAT voltage and CTAT voltage.
Specifically, the reference voltage generating circuit includes a plurality of PMOS transistors, which are sequentially connected in series, and in this embodiment, the reference voltage generating circuit is formed by stacking 36 PMOS transistors, and the reference voltage generating circuit is configured to generate two reference voltages V REF1 And V REF2 The op-amp in the dual loop clamp structure is a high gain (96.8 dB) two-stage op-amp such that V TOP ＝V REF1 ，V BOTTOM ＝V REF2 The reference current thus generated across the resistor is:
I REF ＝(V BOTTOM -V TOP )/R；
reference voltage V REF1 And V REF2 Respectively connected with two operational amplifier input ends, and providing input voltage V of the operational amplifier with good temperature stability for the two operational amplifiers REF1 、V REF2 ；
The reference current generating circuit clamps the voltage V at two ends of the resistor through two operational amplifiers TOP 、V BOTTOM Input voltage V of the operational amplifier respectively equal to the two ends of the resistor REF1 、V REF2 Wherein V is TOP ＝V REF1 ，V BOTTOM ＝V REF2 Thereby inputting the voltage V through the two ends of the resistor TOP 、V BOTTOM A reference current I which is hardly changed with temperature, is generated by the difference calculation of (a):
the CTAT temperature-sensing voltage generation circuit comprises two NMOS tubes M5 and M6 and first current mirrors M1 and M2, wherein the grid electrode of the first current mirror M1 is connected with the reference current generation circuit, and the grid electrode of the first current mirror M2 is connected with the NMOS tubes;
the first current mirror copies the reference current to the branch where M2 is located through M1, so that the branch current I where M2 is located REF1 =i, thus I REF1 The reference current is also the reference current, and bias currents are provided for NMOS transistors M5 and M6 of a CTAT temperature-sensing voltage generation circuit connected with a diode, so that the M5 and M6 work in a subthreshold region, wherein M1 and M2 in the first current mirror are PMOS transistors, and the leakage current calculation method is as follows:
wherein K is the width-to-length ratio of the MOS tube, mu is the carrier mobility, C ox To delete oxide layer capacitance, V T Is thermal voltage, V GS Is MOS tube gate source voltage, eta is sub-threshold coefficient, V th Is MOS transistor threshold voltage, V DS Is MOS tube drainA source voltage.
When V is DS ＞＞V T When the method is used, the following steps are included:
wherein mu 0 Is the carrier mobility at absolute zero degrees,
the measured m is approximately 2, thus the temperature coefficient in the logarithmic termIt can be ignored that the approximation considers the logarithmic term independent of temperature, and assuming that the true number of the logarithmic term is M, there are:
wherein q is the primary charge quantity, K B Is the boltzmann constant.
Because ofAnd->Therefore(s)>V GS Has a negative temperature coefficient.
The stacked structure is realized by connecting the NMOS M5 and the NMOS M6 in series, and the temperature coefficient of the gate-source voltage of the M5 is as follows because the M5 and the M6 have the same width-to-length ratio:
thus, the effect of doubling the first order temperature coefficient of the CTAT voltage is achieved.
Similarly, the PTAT temperature-sensing voltage generation circuit comprises two PMOS tubes M7 and M8 and second current mirrors M3 and M4, wherein the drain electrode of the second current mirror M3 is connected with the reference current generation circuit, and the drain electrode of the second current mirror M4 is connected with the PMOS tubes;
the second current mirror copies the reference current to the branch where M4 is located through M3, so that the branch current I where M4 is located REF2 =i, thus I REF2 The reference current is also used for providing bias current for NMOS (N-channel metal oxide semiconductor) tubes M7 and M8 of the PTAT temperature-sensing voltage generation circuit connected with the diode, so that the M7 and M8 work in a subthreshold region, wherein M3 and M4 are NMOS tubes, and the leakage current calculation method is as follows:
wherein K is the width-to-length ratio of the MOS tube, mu is the carrier mobility, C ox To delete oxide layer capacitance, V T Is thermal voltage, V GS Is MOS tube gate source voltage, eta is sub-threshold coefficient, V th Is MOS transistor threshold voltage, V DS The drain-source voltage of the MOS tube;
when V is DS ＞＞V T When the method is used, the following steps are included:
wherein mu 0 Is the carrier mobility at absolute zero degrees,
the measured M is approximately 2, so the temperature coefficient in the logarithmic term is negligible, i.e. the logarithmic term is approximately considered to be independent of temperature, assuming that the true number of the logarithmic term is M:
wherein q is the primary charge quantity, K B Is the boltzmann constant.
V PTAT ＝VDD-|V GS7 |-|V GS8 |
＝VDD+V GS7 +V GS8
Due to V GS7 、V GS8 Is negative and V GS With the above temperature characteristics, V with increasing temperature GS The absolute value of (2) decreases linearly, so V PTAT Has a positive temperature coefficient.
The NMOS M7 and the NMOS M8 connected through the two diodes are connected in series, so that a stacked structure is realized, and the temperature coefficient of the gate-source voltage of the M8 is as follows because the M7 and the M8 have the same width-to-length ratio:
thus, the effect of doubling the first order temperature coefficient of the PTAT voltage is achieved.
The beneficial effects of the invention are as follows:
the reference voltage generating circuit adopts a diode stacking structure, so that the generated reference voltage hardly changes with temperature; the reference current generating circuit generates reference current through a double-loop clamping structure, fewer used branches are used, the power consumption is lower, and the temperature stability of the reference current is better; the high-gain operational amplifier in the double-loop current reference circuit enables the voltage at two ends of the resistor to be clamped to the reference voltage, so that the voltage difference on the resistor with the structure is reduced, and the overall power consumption of the circuit is reduced; biasing the temperature sensing MOS tube by using a reference current to enable the output voltage to have good first-order temperature characteristics, doubling the voltage temperature coefficient through MOS stacking, and improving the resolution of the temperature sensing circuit; the whole circuit completes temperature independent current and multi-temperature sensing signal output on only 4 branches, reduces the area required by the circuit and has high process compatibility.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (10)
1. The temperature sensing circuit based on the double-loop clamping structure is characterized by comprising a reference voltage generating circuit, a reference current generating circuit and a temperature sensing voltage generating circuit;
the reference voltage generation circuit is connected with the reference current generation circuit and is used for generating a reference voltage serving as an input voltage of the reference current generation circuit; the reference current generating circuit is of a double-loop clamping structure and comprises two operational amplifiers, the two operational amplifiers respectively form two feedback loops, and the two operational amplifiers are respectively connected to two ends of the resistor and clamp the voltages at the two ends of the resistor; the temperature sensing voltage generating circuit comprises a positive temperature coefficient PTAT temperature sensing voltage generating circuit and a negative temperature coefficient CTAT temperature sensing voltage generating circuit, the PTAT temperature sensing voltage generating circuit and the CTAT temperature sensing voltage generating circuit are respectively biased by reference currents and are connected with the two operational amplifiers, and the PTAT temperature sensing voltage generating circuit and the CTAT temperature sensing voltage generating circuit respectively adopt diode stacking structures to realize first-order temperature coefficient doubling of PTAT voltage and CTAT voltage.
2. The temperature sensing circuit of claim 1, wherein the reference voltage generating circuit comprises a plurality of PMOS transistors, the plurality of PMOS transistors in turnConnected in series, the reference voltage generating circuit is used for generating two reference voltages V REF1 And V REF2 Reference voltage V REF1 And V REF2 Respectively connected with two operational amplifier input ends as the input voltage V of the operational amplifier REF1 、V REF2 。
3. The temperature sensing circuit of claim 1, wherein the op-amp is a two-stage op-amp.
4. The temperature sensing circuit of claim 2, wherein the reference current generating circuit clamps the voltage V across the resistor by two op amps TOP 、V BOTTOM Input voltage V of the operational amplifier respectively equal to the two ends of the resistor REF1 、V REF2 Input voltage V through both ends of resistor TOP 、V BOTTOM Is calculated to produce a reference current.
5. The temperature sensing circuit of claim 4, wherein the CTAT temperature-sensing voltage generation circuit comprises two NMOS transistors M5, M6 and a first current mirror M1, M2, the first current mirror M1 having a gate connected to the reference current generation circuit and a gate M2 connected to the NMOS transistors.
6. The temperature sensing circuit of claim 4, wherein the PTAT temperature-sensing voltage generation circuit comprises two PMOS transistors M7, M8 and a second current mirror M3, M4, the second current mirror M3 drain is connected to the reference current generation circuit, and the M4 drain is connected to the PMOS transistors.
7. The temperature sensing circuit of claim 5, wherein the first current mirror is configured to copy the reference current to a branch where M2 is located through M1, and provide bias currents for NMOS transistors M5 and M6 of the CTAT temperature sensing voltage generating circuit, so that M5 and M6 operate in a subthreshold region, and M1 and M2 are PMOS transistors.
8. The temperature sensing circuit of claim 6, wherein the second current mirror is configured to copy the reference current to a branch where M4 is located through M3, and provide bias currents for NMOS transistors M7 and M8 of the PTAT temperature sensing voltage generating circuit, such that M7 and M8 operate in a subthreshold region, and M3 and M4 are NMOS transistors.
9. The temperature sensing circuit of claim 7, wherein the NMOS transistors M5, M6 of the CTAT temperature-sensing voltage generation circuit are connected in series and the aspect ratio of M5, M6 is the same.
10. The temperature sensing circuit of claim 8, wherein PMOS tubes M7, M8 of the PTAT temperature-sensitive voltage generation circuit are connected in series and the aspect ratio of M7, M8 is the same.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310543000.5A CN116735032A (en) | 2023-05-12 | 2023-05-12 | Temperature sensing circuit based on double-loop clamping structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310543000.5A CN116735032A (en) | 2023-05-12 | 2023-05-12 | Temperature sensing circuit based on double-loop clamping structure |
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| CN116735032A true CN116735032A (en) | 2023-09-12 |
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| CN202310543000.5A Pending CN116735032A (en) | 2023-05-12 | 2023-05-12 | Temperature sensing circuit based on double-loop clamping structure |
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