CN116721963A - Annealing furnace and annealing equipment - Google Patents

Annealing furnace and annealing equipment Download PDF

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Publication number
CN116721963A
CN116721963A CN202310631254.2A CN202310631254A CN116721963A CN 116721963 A CN116721963 A CN 116721963A CN 202310631254 A CN202310631254 A CN 202310631254A CN 116721963 A CN116721963 A CN 116721963A
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CN
China
Prior art keywords
wafer
reaction chamber
bracket
supporting
wafer tray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310631254.2A
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Chinese (zh)
Inventor
戴建波
孙文彬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Yiwen Microelectronics Technology Co Ltd
Advanced Materials Technology and Engineering Inc
Original Assignee
Jiangsu Yiwen Microelectronics Technology Co Ltd
Advanced Materials Technology and Engineering Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Yiwen Microelectronics Technology Co Ltd, Advanced Materials Technology and Engineering Inc filed Critical Jiangsu Yiwen Microelectronics Technology Co Ltd
Priority to CN202310631254.2A priority Critical patent/CN116721963A/en
Publication of CN116721963A publication Critical patent/CN116721963A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D1/00—Casings; Linings; Walls; Roofs
    • F27D1/18—Door frames; Doors, lids, removable covers
    • F27D1/1808—Removable covers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D3/00—Charging; Discharging; Manipulation of charge
    • F27D3/12—Travelling or movable supports or containers for the charge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D1/00—Casings; Linings; Walls; Roofs
    • F27D1/18—Door frames; Doors, lids, removable covers
    • F27D1/1808—Removable covers
    • F27D2001/1825—Means for moving the cover
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D3/00—Charging; Discharging; Manipulation of charge
    • F27D2003/0034—Means for moving, conveying, transporting the charge in the furnace or in the charging facilities
    • F27D2003/0046—Means for moving, conveying, transporting the charge in the furnace or in the charging facilities comprising one or more movable arms, e.g. forks
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27M—INDEXING SCHEME RELATING TO ASPECTS OF THE CHARGES OR FURNACES, KILNS, OVENS OR RETORTS
    • F27M2003/00—Type of treatment of the charge
    • F27M2003/01—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The embodiment of the application provides an annealing furnace and annealing equipment, and relates to the technical field of semiconductors. The annealing furnace and the annealing equipment comprise a reaction chamber, a furnace cover, a bracket, a wafer tray, a lifting driving device and supporting legs; the furnace cover is arranged at the top of the reaction chamber; the lifting driving device is arranged on the reaction chamber and connected with the bracket and used for driving the bracket to lift; the support legs are arranged at the top of the bracket; the wafer tray is arranged in the reaction chamber and used for bearing wafers, through holes are formed in the wafer tray and used for allowing the supporting legs to pass through, so that the supporting legs can lift the wafers under the condition of ascending or can place the wafers to the wafer tray under the condition of descending, and the wafer tray has the effect of being convenient for taking or placing the wafers.

Description

Annealing furnace and annealing equipment
Technical Field
The application relates to the technical field of semiconductors, in particular to an annealing furnace and annealing equipment.
Background
The rapid annealing furnace uses halogen infrared lamps as heat sources, and rapidly heats the wafer or the material to 300-1200 ℃ through extremely rapid heating rate, so that some defects in the wafer or the material are eliminated, and the product performance is improved. The rapid annealing furnace (also called chip heat treatment equipment) is widely applied to the production of various chip products such as IC wafers, LED wafers, MEMS, compound semiconductors, power devices and the like, and the processes of rapid ohmic contact alloy, ion implantation annealing, oxide growth, stress relief, densification and the like, and the crystal structure and the photoelectric performance are improved through rapid heat treatment, so that the technology index is high, the process is complex, and the specificity is strong.
The existing scheme is that after the furnace is opened, the wafer is manually taken and placed, after the reaction of the wafer in the rapid annealing furnace is completed, the furnace cover of the rapid annealing furnace is manually opened, the reacted wafer is taken out by using a tool, then the wafer to be treated is put in again, the furnace cover is closed, and the annealing is performed after heating; the whole operation process has the defect of inconvenient taking or placing of the wafer.
Disclosure of Invention
The object of the present application includes, for example, providing an annealing furnace having an effect of facilitating the taking or placing of wafers.
The application also aims to provide annealing equipment which has the effect of facilitating the taking or placing of wafers.
Embodiments of the application may be implemented as follows:
the embodiment of the application provides an annealing furnace, which comprises a reaction chamber, a furnace cover, a bracket, a wafer tray, a lifting driving device and supporting legs;
the furnace cover is arranged at the top of the reaction chamber;
the lifting driving device is arranged on the reaction chamber and connected with the bracket and used for driving the bracket to lift;
the support legs are arranged at the top of the bracket;
the wafer tray is arranged in the reaction chamber and used for bearing wafers, through holes are formed in the wafer tray and used for allowing the supporting pins to pass through, so that the supporting pins can lift the wafers under the condition of ascending or place the wafers to the wafer tray under the condition of descending.
Optionally, the supporting legs comprise a first supporting leg and a second supporting leg, the first supporting leg is connected with the top of the bracket, and the second supporting leg is connected with one end, far away from the bracket, of the first supporting leg.
Optionally, the top end of the second supporting leg is provided with an inclined part and a horizontal part, the inclined part is connected with the horizontal part, the horizontal part is used for supporting the wafer, and the inclined part is used for guiding the wafer so as to center the wafer;
the top end section of the second supporting leg is rectangular, and the length and the width of the top end section of the second supporting leg are 6mm and 5mm;
the inclined portion and the horizontal portion are arranged along the length direction of the top end of the second supporting leg, and the length of the horizontal portion along the length direction of the top end of the second supporting leg is 3.5mm.
Optionally, the wafer tray is a circular tray, the number of the supporting legs includes a plurality of, a plurality of the supporting legs are followed the same circumference direction of wafer tray is arranged, the slope is followed the outside direction slope of center of wafer tray upwards sets up.
Optionally, a plurality of locating hole groups have been seted up at the top of bracket, and is a plurality of locating hole groups by the center of wafer tray outwards arranges, and every locating hole group includes a plurality of locating holes, first support foot is connected with corresponding the locating hole.
Optionally, the first supporting leg is a ceramic supporting leg, and the second supporting leg is a quartz supporting leg.
Optionally, the lifting driving device comprises an air cylinder, a linear sliding rail and a connecting plate;
the bottom of the reaction chamber is provided with a mounting plate, the air cylinder and the linear slide rail are both arranged on the mounting plate, and a piston rod of the air cylinder extends vertically downwards and is connected with the connecting plate;
the connecting plate is matched with the linear slide rail, and the connecting plate is connected with the bracket.
Optionally, the bracket comprises a top plate and a supporting rod with a hollow inside, the top plate is positioned in the reaction chamber, and the supporting feet are arranged on the top plate;
one end of the supporting rod is connected with the top plate, the other end of the supporting rod is connected with the lifting driving device, an opening is formed in the bottom of the reaction chamber, the supporting rod movably penetrates through the opening, and a gap is reserved between the outer side wall of the supporting rod and the opening;
the annealing furnace further comprises a corrugated pipe, the corrugated pipe is sleeved on the supporting rod, and two ends of the corrugated pipe are respectively connected with the lifting driving device and the bottom of the reaction chamber.
Optionally, an opening is disposed on a side wall of the reaction chamber, the opening faces the wafer tray, and a door plate is disposed at the opening.
The embodiment of the application also provides annealing equipment, which comprises the mechanical arm and the annealing furnace, wherein the side wall of the reaction chamber is provided with an opening, and the mechanical arm is used for extending into the reaction chamber through the opening to place or take wafers.
The annealing furnace and the annealing equipment have the beneficial effects that: in the process of taking the wafer, the lifting driving device drives the bracket and the supporting feet on the bracket to lift, the supporting feet lift the wafer to separate the wafer from the wafer tray, and then the wafer after the reaction is taken by stretching into the reaction chamber through the opening by using the mechanical arm; in the process of placing the wafer, the mechanical arm stretches into the reaction chamber through the opening to place the wafer to be processed on the supporting leg, then the lifting driving device drives the bracket and the supporting leg on the bracket to descend until the wafer to be processed is placed on the wafer tray, and the whole operation process has the advantage of being convenient for taking or placing the wafer, saves labor cost, also eliminates the error rate of manual operation, shortens operation time, greatly reduces equipment beat and improves the automation degree of equipment.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of the overall structure of an annealing furnace according to an embodiment of the present application;
FIG. 2 is a cross-sectional view of an annealing furnace in an embodiment of the application;
FIG. 3 is an exploded view showing the positional relationship among the top plate, the support legs, the wafer tray, and the wafer in accordance with an embodiment of the present application;
fig. 4 is a schematic structural view for showing a second bracket according to an embodiment of the application.
Icon: 100-annealing furnace; 110-a reaction chamber; 111-opening; 112-supporting legs; 113-a mounting plate; 114-opening holes; 115-a second mount; 120-brackets; 121-top plate; 1211-a set of positioning holes; 122-supporting rods; 130-wafer tray; 131-through holes; 140-lifting driving device; 141-cylinder; 142-linear slide rail; 143-connecting plates; 1431—a support surface; 1432-a first mount; 150-supporting feet; 151-first support legs; 152-second support leg; 1521-a bevel; 1522-horizontal section; 160-bellows; 200-wafer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present application and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present application may be combined with each other without conflict.
The inventor of the application discovers that the existing annealing furnace needs to manually take and place the wafer, after the reaction of the wafer in the rapid annealing furnace is completed, the furnace cover of the rapid annealing furnace is manually opened, the reacted wafer is taken out by using a tool, and then the wafer to be treated is put in again; the whole operation process has higher labor cost, certain manual operation error rate and longer operation time. The embodiment provides an annealing device for solving the technical problems.
Referring to fig. 1 to 3, the annealing apparatus provided in this embodiment includes a mechanical arm (not shown in the drawings) and an annealing furnace 100, wherein the annealing furnace 100 includes a reaction chamber 110, a furnace cover (not shown in the drawings), a bracket 120, a wafer tray 130, a lifting driving device 140, and a supporting leg 150; the furnace cover is arranged at the top of the reaction chamber 110; the lifting driving device 140 is disposed on the reaction chamber 110 and connected to the bracket 120, for driving the bracket 120 to lift; the supporting feet 150 are arranged on the top of the bracket 120; the wafer tray 130 is disposed in the reaction chamber 110 and is used for carrying the wafer 200, the wafer tray 130 is provided with a through hole 131, and the through hole 131 is used for allowing the supporting leg 150 to pass through, so that the supporting leg 150 can lift the wafer 200 under the condition of ascending or can place the wafer 200 to the wafer tray 130 under the condition of descending; the side wall of the reaction chamber 110 is provided with an opening 111, the opening 111 faces the wafer tray 130, and a door plate is arranged at the opening 111. The robot arm is configured to extend into the reaction chamber 110 through the opening 111 to place or pick up the wafer 200.
In this embodiment, the lifting driving device 140 is located below the reaction chamber 110, and a plurality of supporting legs 112 are circumferentially disposed on the inner bottom wall of the reaction chamber 110, and the plurality of supporting legs 112 support the wafer tray 130 to fix the wafer tray 130. The mechanical arm is one of the components of the automated robot, is located outside the reaction chamber 110, and can stretch into the reaction chamber 110 under control to take or place the wafer 200; the door panel may be a pneumatic door panel that is opened or closed by a door valve.
In the process of taking the wafer 200, the lifting driving device 140 drives the bracket 120 and the supporting legs 150 on the bracket 120 to lift, the supporting legs 150 penetrate through the through holes 131 to lift the wafer 200 so as to separate the wafer 200 from the wafer tray 130, a gap (the gap is equal to 10 mm) is formed between the wafer 200 and the wafer tray 130, and then a mechanical arm is utilized to extend into the gap between the wafer 200 and the wafer tray 130 through the opening 111 so as to take the reacted wafer 200; in the process of placing the wafer 200, the mechanical arm stretches into the reaction chamber 110 through the opening 111 to place the wafer 200 to be processed on the supporting leg 150, the mechanical arm withdraws from the reaction chamber 110 through the opening 111, and then the bracket 120 and the supporting leg 150 on the bracket 120 are driven to descend through the lifting driving device 140 until the wafer 200 to be processed is placed on the wafer tray 130, the whole operation process has the advantage of being convenient for taking or placing the wafer 200, the labor cost is saved, the error rate of manual operation is eliminated, the operation time is shortened, the equipment beat is greatly reduced, and the automation degree of the equipment is improved.
Further, the supporting leg 150 includes a first supporting leg 151 and a second supporting leg 152, the first supporting leg 151 is connected with the top of the bracket 120, and the second supporting leg 152 is connected with an end of the first supporting leg 151 far away from the bracket 120. Referring to fig. 4, the top end of the second supporting leg 152 is provided with an inclined portion 1521 and a horizontal portion 1522, the inclined portion 1521 is connected to the horizontal portion 1522, the horizontal portion 1522 is used for supporting the wafer 200, and the inclined portion 1521 is used for guiding the wafer 200 to center the wafer 200.
Optionally, the top section of the second supporting leg 152 is rectangular, and the length of the top section of the second supporting leg 152 is 6mm and the width is 5mm; the inclined portion 1521 and the horizontal portion 1522 are arranged along the length direction of the top end of the second leg 152, and the length of the horizontal portion 1522 along the length direction of the top end of the second leg 152 is 3.5mm; it should be noted that the dimensions of the second supporting leg 152 in the present embodiment are only examples, and in other embodiments, the dimensions of the second supporting leg 152 may be determined according to practical situations.
In this embodiment, the wafer tray 130 is a circular tray, the number of the pins 150 includes a plurality of pins 150, the plurality of pins 150 are arranged along the same circumferential direction of the wafer tray 130, and the inclined portion 1521 is arranged obliquely upwards along the outward direction of the center of the wafer tray 130; the most uniform heating temperature of the reaction chamber 110 is located at the very center of the reaction chamber 110.
When the wafer 200 is placed on top of the second pins 152, the inclined portions 1521 on the plurality of second pins 152 can guide the wafer 200 at the same time, so as to center the wafer 200, prevent the wafer 200 from being eccentric, and ensure that the thermal treatment effect of the wafer 200 is optimal when the wafer 200 is located at the very center of the reaction chamber 110; meanwhile, after the inclined portion 1521 guides the wafer 200, the horizontal portions 1522 of the plurality of second pins 152 can support the wafer 200.
In addition, a plurality of positioning hole groups 1211 are formed at the top of the bracket 120, the plurality of positioning hole groups 1211 are arranged outwards from the center of the wafer tray 130, each positioning hole group 1211 includes a plurality of positioning holes, and the first supporting leg 151 is connected with the corresponding positioning hole.
In this embodiment, the number of the first pins 151 is equal to the number of the positioning holes in one of the positioning hole groups 1211, and the through holes 131 are correspondingly arranged outwards from the center of the wafer tray 130, and the positions and the number of the through holes 131 are matched with those of the positioning holes. For example, when the first supporting leg 151 is disposed in the positioning hole of the outermost ring, the first supporting leg 151 drives the second supporting leg 152 to pass through the through hole 131 of the outermost ring in the ascending process; when the first supporting leg 151 is disposed in the positioning hole of the innermost ring, the first supporting leg 151 drives the second supporting leg 152 to pass through the through hole 131 of the innermost ring in the ascending process.
By providing the plurality of positioning hole groups 1211 and the through holes 131 matched with the positioning holes, wafers 200 with different sizes can be compatible, for example, when the size of the wafer 200 is large, the first supporting legs 151 are arranged in the positioning holes close to the outer ring; when the size of the wafer 200 is smaller, the first supporting leg 151 is disposed in the positioning hole near the inner ring.
In this embodiment, the first pins 151 are ceramic pins, and the second pins 152 are quartz pins. One end of the first supporting leg 151 is provided with threads and is in threaded connection with the top of the bracket 120, so that the height of the first supporting leg 151 can be conveniently adjusted; the top of the first supporting leg 151 is provided with a slot, one end of the second supporting leg 152 is inserted into the corresponding slot, and when one end of the second supporting leg 152 is inserted into the slot, a screw is used to penetrate through the side wall of the first supporting leg 151 and tightly support against the second supporting leg 152, so that the second supporting leg 152 is fixed.
The second supporting leg 152 is set to be a quartz supporting leg, so that the wafer 200 can be well prevented from being polluted by ceramic powder of the first supporting leg 151, the second supporting leg 152 is in contact with the wafer 200, pollution is avoided, the thermal expansion coefficient of quartz is low, the quartz is negligible, and no additional convex deformation stress is generated on the wafer 200 at high temperature.
A silicon carbide coating is provided on the surface of the wafer tray 130.
In this embodiment, the wafer tray 130 is made of high-temperature-resistant high-purity graphite, and a silicon carbide coating is plated on the surface of the wafer tray 130, so that the strength of the wafer tray 130 can be increased by the silicon carbide coating, and graphite powder can be prevented from being generated due to long-time use of the wafer tray 130.
Further, the lifting driving device 140 includes an air cylinder 141, a linear slide rail 142 and a connection plate 143; the bottom of the reaction chamber 110 is provided with a mounting plate 113, the air cylinder 141 and the linear slide rail 142 are arranged on the mounting plate 113, and the piston rod of the air cylinder 141 extends vertically downwards and is connected with a connecting plate 143; the connection plate 143 is matched with the linear slide rail 142, and the connection plate 143 is connected with the bracket 120.
The bracket 120 comprises a top plate 121 and a supporting rod 122 with a hollow inside, the top plate 121 is positioned in the reaction chamber 110, and the supporting feet 150 are arranged on the top plate 121; one end of the supporting rod 122 is connected with the top plate 121, the other end of the supporting rod 122 is connected with the lifting driving device 140, an opening 114 is arranged at the bottom of the reaction chamber 110, the supporting rod 122 is movably arranged in the opening 114 in a penetrating manner, and a gap is reserved between the outer side wall of the supporting rod 122 and the inner side wall of the opening 114; the annealing furnace 100 further comprises a bellows 160, the bellows 160 is sleeved on the supporting rod 122, and two ends of the bellows 160 are respectively connected with the lifting driving device 140 and the bottom of the reaction chamber 110.
In this embodiment, a plurality of positioning hole sets 1211 are disposed on the top plate 121, the linear sliding rail 142 extends vertically, and the connecting plate 143 is slidably engaged with the linear sliding rail 142; the connecting plate 143 has a supporting surface 1431, the supporting surface 1431 is provided with a first mounting seat 1432, and the opening 114 is provided with a second mounting seat 115; one end of the supporting rod 122 penetrates through the second mounting seat 115 and is welded with the top plate 121, a gap is reserved between the outer side wall of the supporting rod 122 and the second mounting seat 115, the other end of the supporting rod 122 is connected in the first mounting seat 1432, and two ends of the corrugated tube 160 are respectively connected with the first mounting seat 1432 and the second mounting seat 115.
When the wafer 200 needs to be lifted, the connecting plate 143 is driven to ascend through the air cylinder 141, the corrugated pipe 160 is compressed, and the connecting plate 143 drives the supporting rod 122, the top plate 121 and the supporting feet 150 on the top plate 121 to ascend synchronously until the wafer 200 is lifted; when the wafer 200 is required to be placed on the wafer tray 130, the connecting plate 143 is driven to descend by the air cylinder 141, the corrugated tube 160 is stretched, the connecting plate 143 drives the supporting rod 122, the top plate 121 and the supporting legs 150 on the top plate 121 to descend synchronously until the wafer 200 is placed on the wafer tray 130, and the inner space of the supporting rod 122 and the gaps between the supporting rod 122 and the second mounting seat 115 can be kept in the same vacuum state as the reaction chamber 110 all the time in the compression and stretching processes of the corrugated tube 160, so that the processing stability of the wafer 200 is ensured.
In summary, in the process of taking the wafer 200, the air cylinder 141 drives the connecting plate 143 to rise, so as to drive the supporting rod 122 and the top plate 121 to rise, the plurality of supporting legs 150 rise along with the top plate 121, the plurality of supporting legs 150 lift the wafer 200 through the corresponding through holes 131 to separate the wafer 200 from the wafer tray 130, the bellows 160 is compressed, and then the mechanical arm extends into the gap between the wafer 200 and the wafer tray 130 through the opening 111 to take the reacted wafer 200; in the process of placing the wafer 200, the mechanical arm stretches into the reaction chamber 110 through the opening 111 to place the wafer 200 to be processed on the supporting leg 150, the mechanical arm exits the reaction chamber 110 through the opening 111, then the air cylinder 141 drives the connecting plate 143 to descend, and further drives the supporting rod 122, the top plate 121 and the supporting leg 150 on the top plate 121 to descend until the wafer 200 to be processed is placed on the wafer tray 130, and the corrugated pipe 160 is stretched; since the bellows 160 is always sleeved on the outer side of the support rod 122, the inner space of the support rod 122 and the gap between the support rod 122 and the second mounting seat 115 can be kept in the same vacuum state as the reaction chamber 110, so that the processing stability of the wafer 200 is ensured.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present application should be included in the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (10)

1. An annealing furnace is characterized by comprising a reaction chamber, a furnace cover, a bracket, a wafer tray, a lifting driving device and supporting legs;
the furnace cover is arranged at the top of the reaction chamber;
the lifting driving device is arranged on the reaction chamber and connected with the bracket and used for driving the bracket to lift;
the support legs are arranged at the top of the bracket;
the wafer tray is arranged in the reaction chamber and used for bearing wafers, through holes are formed in the wafer tray and used for allowing the supporting pins to pass through, so that the supporting pins can lift the wafers under the condition of ascending or place the wafers to the wafer tray under the condition of descending.
2. The lehr of claim 1 wherein the feet include a first foot connected to the top of the bracket and a second foot connected to an end of the first foot remote from the bracket.
3. The annealing furnace according to claim 2, wherein the top end of the second supporting leg is provided with an inclined portion and a horizontal portion, the inclined portion and the horizontal portion are connected, the horizontal portion is used for supporting the wafer, and the inclined portion is used for guiding the wafer to center the wafer;
the top end section of the second supporting leg is rectangular, and the length and the width of the top end section of the second supporting leg are 6mm and 5mm;
the inclined portion and the horizontal portion are arranged along the length direction of the top end of the second supporting leg, and the length of the horizontal portion along the length direction of the top end of the second supporting leg is 3.5mm.
4. The annealing furnace according to claim 3, wherein the wafer tray is a circular tray, the number of the pins includes a plurality, the plurality of pins are arranged along the same circumferential direction of the wafer tray, and the inclined portion is arranged obliquely upward along a direction outward from a center of the wafer tray.
5. The annealing furnace of claim 2, wherein a plurality of positioning hole groups are formed in the top of the bracket, the plurality of positioning hole groups are arranged outwards from the center of the wafer tray, each positioning hole group comprises a plurality of positioning holes, and the first supporting leg is connected with the corresponding positioning hole.
6. The lehr of claim 2 wherein the first standoff is a ceramic standoff and the second standoff is a quartz standoff.
7. The annealing furnace according to claim 1, wherein said elevation driving means comprises a cylinder, a linear slide and a connecting plate;
the bottom of the reaction chamber is provided with a mounting plate, the air cylinder and the linear slide rail are both arranged on the mounting plate, and a piston rod of the air cylinder extends vertically downwards and is connected with the connecting plate;
the connecting plate is matched with the linear slide rail, and the connecting plate is connected with the bracket.
8. The lehr of claim 1 wherein the brackets include a top plate and a support rod hollow in the interior, the top plate being located within the reaction chamber, the support feet being disposed on the top plate;
one end of the supporting rod is connected with the top plate, the other end of the supporting rod is connected with the lifting driving device, an opening is formed in the bottom of the reaction chamber, the supporting rod movably penetrates through the opening, and a gap is reserved between the outer side wall of the supporting rod and the opening;
the annealing furnace further comprises a corrugated pipe, the corrugated pipe is sleeved on the supporting rod, and two ends of the corrugated pipe are respectively connected with the lifting driving device and the bottom of the reaction chamber.
9. The lehr of claim 1 wherein the side walls of the reaction chamber are provided with openings facing the wafer tray, the openings being provided with door panels.
10. An annealing device, comprising a mechanical arm and an annealing furnace according to any one of claims 1 to 9, wherein an opening is formed in a side wall of the reaction chamber, and the mechanical arm is used for extending into the reaction chamber through the opening to place or take a wafer.
CN202310631254.2A 2023-05-31 2023-05-31 Annealing furnace and annealing equipment Pending CN116721963A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310631254.2A CN116721963A (en) 2023-05-31 2023-05-31 Annealing furnace and annealing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310631254.2A CN116721963A (en) 2023-05-31 2023-05-31 Annealing furnace and annealing equipment

Publications (1)

Publication Number Publication Date
CN116721963A true CN116721963A (en) 2023-09-08

Family

ID=87870759

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310631254.2A Pending CN116721963A (en) 2023-05-31 2023-05-31 Annealing furnace and annealing equipment

Country Status (1)

Country Link
CN (1) CN116721963A (en)

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