CN116721905A - Semiconductor device, manufacturing method thereof and electronic equipment - Google Patents

Semiconductor device, manufacturing method thereof and electronic equipment Download PDF

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Publication number
CN116721905A
CN116721905A CN202310693307.3A CN202310693307A CN116721905A CN 116721905 A CN116721905 A CN 116721905A CN 202310693307 A CN202310693307 A CN 202310693307A CN 116721905 A CN116721905 A CN 116721905A
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dielectric layer
semiconductor device
layer
manufacturing
oxygen precursor
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CN116721905B (en
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汪昌州
宋维聪
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Shanghai Betone Semiconductor Energy Technology Co ltd
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Shanghai Betone Semiconductor Energy Technology Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma

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Abstract

The application provides a semiconductor device, a manufacturing method thereof and electronic equipment, and relates to the field of semiconductors. The method for manufacturing the semiconductor device comprises the steps of respectively depositing a first dielectric layer and a second dielectric layer on a substrate by adopting an atomic layer deposition process, wherein the concentration of a second oxygen precursor when the second dielectric layer is deposited is higher than that of the first oxygen precursor when the first dielectric layer is deposited. In this embodiment, the first dielectric layer is thinner than the second dielectric layer. The first dielectric layer is deposited at a lower oxygen precursor concentration and thus does not readily form an interfacial layer with the substrate. While the second dielectric layer acts as a thicker layer deposited at a relatively high oxygen precursor concentration with fewer oxygen vacancy defects. The manufacturing method provided by the application can ensure that the whole dielectric layer structure formed by the first dielectric layer and the second dielectric layer has fewer oxygen vacancy defects, and an interface layer is not easy to form between the dielectric layer and the matrix, so that the dielectric layer structure has better electrical performance.

Description

Semiconductor device, manufacturing method thereof and electronic equipment
Technical Field
The application relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof and electronic equipment.
Background
The electrical properties of dielectrics are determined primarily by dielectric constant and leakage currentAnd (5) setting. Some metal oxides have a high dielectric constant, a large band gap energy, and thermal stability. Atomic Layer Deposition (ALD) is a preferred option for preparing metal oxide dielectric layers (i.e., dielectric films) that are relatively low in thickness and have good properties. Oxygen precursors (as oxidants) that may be used in atomic layer deposition processes, e.g., H 2 O、O 2 Etc. When atomic layer deposition is performed in an atmosphere of a high concentration of oxygen precursor, a dielectric layer of higher quality can be obtained in which oxygen vacancy defects are fewer and the dielectric constant is higher. However, when a dielectric layer is deposited on a metal substrate, if the oxygen content in the atmosphere is too high, the metal substrate is oxidized, and an interface layer is formed between the dielectric layer and the metal substrate, resulting in a reduction in the electrical performance of the semiconductor device. While atomic layer deposition is performed in an atmosphere of a low concentration of oxygen precursor, an interfacial layer is not easily generated, but oxygen vacancy defects easily occur in the dielectric layer, resulting in poor film quality of the dielectric layer. Therefore, it is difficult to achieve both the quality of the dielectric layer and the reduction of the oxide interface layer in the prior art.
Disclosure of Invention
The application aims to provide a manufacturing method of a semiconductor device, the semiconductor device and electronic equipment, which can ensure that a dielectric layer has better quality, and simultaneously reduce an generated interface layer, so that the performance of the semiconductor device is improved.
Embodiments of the application may be implemented as follows:
in a first aspect, the present application provides a method for manufacturing a semiconductor device, including:
depositing a first dielectric layer on a substrate by adopting an atomic layer deposition process in the atmosphere of a first oxygen precursor, and performing plasma treatment on the first dielectric layer;
and depositing a second dielectric layer on the first dielectric layer by adopting an atomic layer deposition process in the atmosphere of a second oxygen precursor, wherein the concentration of the second oxygen precursor is higher than that of the first oxygen precursor, and the thickness of the second dielectric layer is larger than that of the first dielectric layer.
In an alternative embodiment, the steps of depositing a first dielectric layer on a substrate using an atomic layer deposition process in an atmosphere of a first oxygen precursor and subjecting the first dielectric layer to a plasma treatment comprise repeating the steps of:
depositing a layer of the sub-dielectric layer using an atomic layer deposition process in an atmosphere of the first oxygen precursor;
and performing plasma treatment on the sub-dielectric layer.
In an alternative embodiment, the step of performing a plasma treatment on the sub-dielectric layer includes:
the sub dielectric layer is formed on N 2 Plasma, H 2 Plasma or NF 3 The plasma is exposed for a preset period of time.
In an alternative embodiment, the sub-dielectric layer has a thickness of
In an alternative embodiment, the concentration of the first oxygen precursor is in the range of 5 to 50g/cm 3 The concentration of the second oxygen precursor is 30-100 g/cm 3 。
In an alternative embodiment, the first dielectric layer has a thickness ofThe thickness of the second dielectric layer is +.>
In an alternative embodiment, the material of the first dielectric layer and the second dielectric layer is zirconia, tantalum oxide, alumina, hafnium oxide, lanthanum oxide, titanium oxide, or silicon oxide.
In an alternative embodiment, the first oxygen precursor and the second oxygen precursor are O 2 、O 3 、H 2 O or H 2 O 2 。
In an alternative embodiment, the substrate is a first electrode layer, and the method for manufacturing the semiconductor device further includes:
and manufacturing a second electrode layer on the second dielectric layer.
In a second aspect, the present application provides a semiconductor device manufactured by the method for manufacturing a semiconductor device according to any one of the foregoing embodiments.
In a third aspect, the present application provides an electronic device, including the semiconductor device according to the foregoing embodiment.
The beneficial effects of the embodiment of the application include, for example:
the application provides a manufacturing method of a semiconductor device, which comprises the steps of adopting an atomic layer deposition process to deposit a first dielectric layer on a substrate in the atmosphere of a first oxygen precursor; a second dielectric layer is deposited on the first dielectric layer using an atomic layer deposition process in an atmosphere of a second oxygen precursor having a concentration higher than the concentration of the first oxygen precursor. In this embodiment, the first dielectric layer is located between the second dielectric layer and the substrate, and is thinner than the second dielectric layer. The first dielectric layer is deposited at a lower oxygen precursor concentration and thus does not readily form an interfacial layer with the substrate. While the second dielectric layer, which is a thicker layer, is deposited at a relatively higher oxygen precursor concentration, has fewer oxygen vacancy defects and is therefore of higher quality. And by carrying out plasma treatment on the first dielectric layer, oxygen vacancy defects in the first dielectric layer are reduced, so that oxygen in the second dielectric layer is not easy to diffuse to the interface of the first dielectric layer and the substrate. The manufacturing method provided by the application can ensure that the whole dielectric layer structure formed by the first dielectric layer and the second dielectric layer has fewer oxygen vacancy defects, and an interface layer is not easy to form between the dielectric layer and the matrix, so that the dielectric layer structure has better electrical performance.
The semiconductor device provided by the application is manufactured by the manufacturing method; the electronic equipment provided by the application comprises the semiconductor device. By adopting the manufacturing method of the semiconductor device, the performance and the stability of the semiconductor device and the electronic equipment are better.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method of fabricating a semiconductor device in accordance with one embodiment of the present application;
fig. 2-5 are schematic diagrams illustrating different forms of a semiconductor device during a manufacturing process according to an embodiment of the present application.
Icon: 100-a first device layer; 110-a first isolation structure; 120-a first conductive structure; 200-a second device layer; 210-a second isolation structure; 220-a second conductive structure; 300-a first electrode layer; 410-a first dielectric layer; 420-a second dielectric layer; 500-second electrode layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present application and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present application may be combined with each other without conflict.
In semiconductor devices, it is often desirable to fabricate dielectric layers with high dielectric constants, which may be prepared by Atomic Layer Deposition (ALD). The prior art often adopts higher oxygen precursor concentration, so that the obtained dielectric layer has fewer oxygen vacancy defects, and the dielectric layer with higher dielectric constant can be obtained. However, in the fabrication of some semiconductor devices, such as capacitor devices, it is difficult to avoid a strong interface reaction when depositing a dielectric layer on an electrode (metal substrate), which can lead to oxidation of the metal substrate, forming an interface layer between the dielectric layer and the metal substrate that is several angstroms thick. The interfacial layer is generally of lower quality and contains impurities, which reduces capacitance density and increases leakage current, resulting in reduced electrical performance of the capacitor. And oxygen diffuses from the high-k dielectric layer to the electrode, resulting in oxygen vacancies in the dielectric layer. Therefore, it is difficult to achieve both the quality of the dielectric layer and the reduction of the oxide interface layer in the prior art.
Therefore, the embodiment of the application provides a manufacturing method of a semiconductor device, which comprises the steps of firstly adopting a lower-concentration oxygen precursor to deposit a thinner first dielectric layer on a metal substrate, and then adopting a higher-concentration oxygen precursor to deposit a thicker second dielectric layer on the first dielectric layer, so that the oxidation of the metal substrate can be reduced, the generation of an interface layer can be reduced, the oxygen vacancy defect of the whole dielectric layer is fewer, and the whole quality is higher.
FIG. 1 is a flow chart of a method of fabricating a semiconductor device in accordance with one embodiment of the present application; fig. 2-5 are schematic diagrams illustrating different forms of a semiconductor device during a manufacturing process according to an embodiment of the present application.
As shown in fig. 1 to 5, a method for manufacturing a semiconductor device according to an embodiment of the present application includes:
in step S100, a first dielectric layer 410 is deposited on the substrate using an atomic layer deposition process in an atmosphere of a first oxygen precursor, and the first dielectric layer 410 is subjected to plasma treatment.
The material, type, and specific manner of formation of the substrate should be selected according to the semiconductor device to be fabricated. In this embodiment, taking a capacitive device as an example, first, the first electrode layer 300 is obtained as a substrate, as shown in fig. 2. The material of the first electrode layer 300 may be a metal or a metal nitride, and the metal may be one or more of titanium, tantalum, copper, tungsten, cobalt, aluminum, nickel and platinum (alloy); the metal nitride may be one or more combinations of titanium nitride, tantalum nitride, copper nitride, tungsten nitride, platinum nitride, aluminum nitride, nickel nitride, and cobalt nitride.
The first electrode layer 300 may be formed by a physical vapor deposition process or a chemical vapor deposition process, and the structure and material of the carrier carrying the first electrode layer 300 may be selected according to specific needs. In this embodiment, the carrier includes a first device layer 100 and a second device layer 200 disposed on the first device layer 100. The first device layer 100 includes a first isolation structure 110 and a first conductive structure 120; the second device layer 200 includes a second isolation structure 210 and a second conductive structure 220. The first isolation structure 110 and the second isolation structure 210 are both made of insulating materials, and the first conductive structure 120 and the second conductive structure 220 are made of metal conductive materials, such as copper and tungsten. The first electrode layer 300 is laid on the second device layer 200 and is electrically connected with the second conductive structure 220. It will be appreciated that in other embodiments, the structure and material of the carrier carrying the first electrode layer 300 may be selected according to the semiconductor device to be manufactured.
After the first electrode layer 300 is obtained, an atomic layer deposition process is used to deposit a first dielectric layer 410 on the first electrode layer 300 in an atmosphere of a first oxygen precursor, and plasma treatment is performed on the first dielectric layer 410, so as to obtain the structure shown in fig. 3. The atomic layer deposition process may be implemented using existing atomic layer deposition equipment. The first electrode layer 300 is in a reaction chamber of an atomic layer deposition apparatus, and a precursor for fabricating a dielectric layer is reacted and deposited on a substrate under an atmosphere of a first oxygen precursor to form the dielectric layer. For example, in the first dielectric layer 410, zrO 2 In the case of (a), the precursor used to fabricate the first dielectric layer 410 may be selected from CpZr [ N (CH) 3 ) 2 ] 3 . The precursor can be considered a zirconium source, and the first oxygen precursor can be considered an oxygen source.
Specifically, step S100 may include repeating the following steps to deposit at least two sub-dielectric layers:
(1) Depositing a sub-dielectric layer using an atomic layer deposition process in an atmosphere of a first oxygen precursor;
(2) The sub-dielectric layer is subjected to a plasma treatment.
It will be appreciated that by repeating the above two steps (1) and (2), a plurality of stacked sub-dielectric layers may be fabricated, thereby forming the first dielectric layer 410.
The sub-dielectric layer is subjected to plasma treatment, which comprises the sub-dielectric layer in N 2 Plasma, H 2 Plasma or NF 3 The plasma is exposed for a preset period of time. Selecting N 2 Plasma, H 2 Plasma or NF 3 And the plasmas are free of carbon, so that carbon pollution can be avoided. Alternatively, the preset duration of the plasma treatment is 1 to 60 seconds, such as one value or a middle value of the two values of 1s, 5s, 10s, 20s, 30s, 40s, 50s and 60 s.
Plasma treatment is carried out on the sub-dielectric layer, so that oxygen vacancies in the sub-dielectric layer can be reduced; in addition, a portion of oxygen may be inhibited from diffusing to the interface of the first electrode layer 300 and the first dielectric layer 410 when the second dielectric layer 420 is subsequently deposited, so that this portion of oxygen can be used for dielectric generation.
The dielectric material of the sub-dielectric layer is zirconium oxide, tantalum oxide, aluminum oxide, hafnium oxide, lanthanum oxide, titanium oxide or silicon oxide. The thickness of the sub-dielectric layer isFurther, the thickness of the first dielectric layer 410 is +.>
In step S200, a second dielectric layer 420 is deposited on the first dielectric layer 410 using an atomic layer deposition process in an atmosphere of a second oxygen precursor, the concentration of the second oxygen precursor being higher than the concentration of the first oxygen precursor, the thickness of the second dielectric layer 420 being greater than the thickness of the first dielectric layer 410.
As shown in fig. 4, in the embodiment of the present application, the second dielectric layer 420 is a main part of the whole dielectric layer structure, and has a thickness greater than that of the first dielectric layer 410, and may be selected from
In this embodiment, the material of the second dielectric layer 420 is zirconia, tantalum oxide, alumina, hafnium oxide, lanthanum oxide, titanium oxide or silicon oxide. The second dielectric layer 420 may be selected from the same materials as the first dielectric layer 410.
In an embodiment of the application, the concentration of the second oxygen precursor is higher than the concentration of the first oxygen precursor. Optionally, the concentration of the second oxygen precursor is 30 to 100g/cm 3 。
The first oxygen precursor and the second oxygen precursor are O 2 、O 3 、H 2 O or H 2 O 2 。
In this embodiment, since the first dielectric layer 410 is a thin layer and directly contacts the first electrode layer 300, the first oxygen precursor concentration used in the deposition of the first dielectric layer 410 is set to be low, so that the first electrode layer 300 is effectively prevented from being oxidized to form an interface layer during the deposition process. The second dielectric layer 420 is a thicker layer, which is deposited under a higher concentration of the second oxygen precursor as a major part of the overall dielectric structure, and thus has fewer oxygen vacancy defects, better quality, and easy obtaining of a higher dielectric constant. And oxygen vacancy defects in the first dielectric layer 410 due to the use of a low concentration of the first oxygen precursor may be reduced after the plasma treatment of the first dielectric layer 410. In the case where the first dielectric layer 410 has fewer oxygen vacancy defects, oxygen in the second dielectric layer 420 is also less likely to diffuse to the interface of the first dielectric layer 410 and the first electrode layer 300. The plasma treatment of the first dielectric layer 410 can also well avoid oxygen vacancy defects in the second dielectric layer 420 due to oxygen diffusion, thereby ensuring the quality of the entire dielectric layer structure.
It should be appreciated that the concentration of the first oxygen precursor and the second oxygen precursor may be controlled by controlling the duration and frequency of the pulses of the oxygen precursor, e.g., by making the duration of the pulses of the second oxygen precursor longer or the frequency of the pulses higher.
In this embodiment, the method further includes annealing the first dielectric layer 410, the second dielectric layer 420, and the first electrode layer 300. The annealing treatment is beneficial to reducing the internal stress of the structure and improving the stability of the performance of the semiconductor structure. The annealing treatment comprises the following steps: preserving heat for 1-10 min at 300-450 ℃; the annealing treatment is performed in an inert gas or ammonia gas.
Further, the method for manufacturing the semiconductor device further comprises the following steps: a second electrode layer 500 is fabricated on the second dielectric layer 420. This causes the first electrode layer 300, the second electrode layer 500, and the first and second dielectric layers 410 and 420 to collectively form a capacitive structure, as shown in fig. 5.
Alternatively, the second electrode layer 500 may be formed by any one of an atomic layer deposition process, an ion reactive sputtering process, a chemical vapor deposition process, a physical vapor deposition process, or an electroplating process. The first electrode layer 300 is also similar in structure, and the material of the second electrode layer 500 may be a metal or a metal nitride. The metal may be a combination (alloy) of one or more of titanium, tantalum, copper, tungsten, cobalt, aluminum, nickel and platinum; the metal nitride may be one or more combinations of titanium nitride, tantalum nitride, copper nitride, tungsten nitride, platinum nitride, aluminum nitride, nickel nitride, and cobalt nitride.
The semiconductor device provided by the embodiment of the application is manufactured by the manufacturing method of the semiconductor device. The foregoing embodiments have been described with reference to the fabrication of a capacitor device, and it should be understood that the process of forming the first dielectric layer 410 and the second dielectric layer 420 in the embodiments of the present application is also applicable to the fabrication of other types of semiconductor devices.
The embodiment of the application also provides electronic equipment (not shown in the figure) comprising the semiconductor device provided by the embodiment of the application.
In summary, the present application provides a method for fabricating a semiconductor device, which includes depositing a first dielectric layer 410 on a substrate by an atomic layer deposition process in an atmosphere of a first oxygen precursor, and performing a plasma treatment on the first dielectric layer 410; a second dielectric layer 420 is deposited on the first dielectric layer 410 using an atomic layer deposition process in an atmosphere of a second oxygen precursor having a concentration that is higher than the concentration of the first oxygen precursor. In the present embodiment, the first dielectric layer 410 is located between the second dielectric layer 420 and the substrate, and is thinner than the second dielectric layer 420. The first dielectric layer 410 is deposited at a lower oxygen precursor concentration and thus does not readily form an interfacial layer with the substrate. While the second dielectric layer 420, which is a thicker layer, is deposited at a relatively higher oxygen precursor concentration, has fewer oxygen vacancy defects and is therefore of higher quality. In addition, by performing plasma treatment on the first dielectric layer 410, oxygen vacancy defects in the first dielectric layer 410 are reduced, so that oxygen in the second dielectric layer 420 is not easy to diffuse to the interface between the first dielectric layer 410 and the substrate. The manufacturing method provided by the application can ensure that the whole dielectric layer structure formed by the first dielectric layer 410 and the second dielectric layer 420 has fewer oxygen vacancy defects, and an interface layer is not easy to form between the dielectric layer and the substrate, so that the dielectric layer structure has better electrical performance.
The semiconductor device provided by the application is manufactured by the manufacturing method; the electronic equipment provided by the application comprises the semiconductor device. By adopting the manufacturing method of the semiconductor device, the performance and the stability of the semiconductor device and the electronic equipment are better.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present application should be included in the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (11)

1. A method of fabricating a semiconductor device, comprising:
depositing a first dielectric layer on a substrate by adopting an atomic layer deposition process in the atmosphere of a first oxygen precursor, and performing plasma treatment on the first dielectric layer;
and depositing a second dielectric layer on the first dielectric layer by adopting an atomic layer deposition process in the atmosphere of a second oxygen precursor, wherein the concentration of the second oxygen precursor is higher than that of the first oxygen precursor, and the thickness of the second dielectric layer is larger than that of the first dielectric layer.
2. The method of fabricating a semiconductor device according to claim 1, wherein the steps of depositing a first dielectric layer on the substrate using an atomic layer deposition process in an atmosphere of a first oxygen precursor and subjecting the first dielectric layer to a plasma treatment, comprise repeating the steps of depositing at least two sub-dielectric layers:
depositing a layer of the sub-dielectric layer using an atomic layer deposition process in an atmosphere of the first oxygen precursor;
and carrying out plasma treatment on the sub-dielectric layer.
3. The method of manufacturing a semiconductor device according to claim 2, wherein the step of performing the plasma treatment on the sub-dielectric layer comprises:
the sub dielectric layer is formed on N 2 Plasma body、H 2 Plasma or NF 3 The plasma is exposed for a preset period of time.
4. The method of manufacturing a semiconductor device according to claim 2, wherein the sub-dielectric layer has a thickness of
5. The method for manufacturing a semiconductor device according to any one of claims 1 to 4, wherein a concentration of the first oxygen precursor is 5 to 50g/cm 3 The concentration of the second oxygen precursor is 30-100 g/cm 3 。
6. The method of manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the thickness of the first dielectric layer isThe thickness of the second dielectric layer is +.>
7. The method of manufacturing a semiconductor device according to any one of claims 1 to 4, wherein a material of the first dielectric layer and the second dielectric layer is zirconium oxide, tantalum oxide, aluminum oxide, hafnium oxide, lanthanum oxide, titanium oxide, or silicon oxide.
8. The method for manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the first oxygen precursor and the second oxygen precursor are O 2 、O 3 、H 2 O or H 2 O 2 。
9. The method for manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the base body is a first electrode layer, the method for manufacturing a semiconductor device further comprising:
and manufacturing a second electrode layer on the second dielectric layer.
10. A semiconductor device manufactured by the manufacturing method of the semiconductor device according to any one of claims 1 to 9.
11. An electronic device comprising the semiconductor device according to claim 10.
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