CN116695238A - Silicon carbide crystal growth device and method and silicon carbide crystal - Google Patents
Silicon carbide crystal growth device and method and silicon carbide crystal Download PDFInfo
- Publication number
- CN116695238A CN116695238A CN202310703657.3A CN202310703657A CN116695238A CN 116695238 A CN116695238 A CN 116695238A CN 202310703657 A CN202310703657 A CN 202310703657A CN 116695238 A CN116695238 A CN 116695238A
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- carbide crystal
- temperature
- growth
- preset
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 197
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 190
- 239000013078 crystal Substances 0.000 title claims abstract description 186
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000001514 detection method Methods 0.000 claims description 29
- 238000002109 crystal growth method Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The embodiment of the invention provides a silicon carbide crystal growth device and method and a silicon carbide crystal, and relates to the field of silicon carbide crystal growth. Therefore, the growth rate of the silicon carbide crystal and the temperature of the preset part are always in a more ideal target range, so that the growth quality of the silicon carbide crystal is improved.
Description
Technical Field
The invention relates to the field of silicon carbide crystal growth, in particular to a silicon carbide crystal growth device and method and a silicon carbide crystal.
Background
Silicon carbide, which is a representative of third generation semiconductor materials, has excellent properties such as large forbidden bandwidth, high saturated electron mobility, strong breakdown field, high thermal conductivity, and the like, and is widely used in the fields of power electronics, radio frequency devices, optoelectronic devices, and the like.
At present, the heating modes of the silicon carbide crystal growing device mainly comprise induction heating and resistance heating. Wherein resistive heating is heating of an object by thermal energy generated by the joule effect of an electric current flowing through the heater. Because the heater is not in direct contact with the crucible, the heating effect is more uniform, and the radial temperature gradient for crystal growth is obviously smaller than that of an induction heating mode.
However, the existing silicon carbide growing device has a single control mode for the heater, so that the growth rate of the silicon carbide crystal changes too fast, and the growth quality of the silicon carbide crystal is affected.
Disclosure of Invention
Objects of the present invention include, for example, providing a silicon carbide crystal growth apparatus, method, and silicon carbide crystal capable of improving the growth quality of the silicon carbide crystal.
Embodiments of the invention may be implemented as follows:
in a first aspect, the present invention provides a silicon carbide crystal growth apparatus comprising:
the inner side of the top wall of the crucible is provided with seed crystals for the growth of silicon carbide crystals;
a top heater disposed above a top wall of the crucible;
the plurality of main heaters are arranged at the outer side of the crucible and are distributed at intervals along the axial direction of the crucible;
the image detection module is arranged at the outer side of the crucible and is used for detecting the growth image of the silicon carbide crystal;
the temperature detection module is arranged at the outer side of the crucible and used for detecting the temperature of a preset part of the side wall of the crucible, and the preset part is a part with the same height as the growth surface of the silicon carbide crystal;
the control module is simultaneously communicated with the image detection module, the temperature detection module, the top heater and the plurality of main heaters, and is used for starting the top heater and the main heater at the highest position to enable the silicon carbide crystal to grow, enabling the growth rate of the silicon carbide crystal to reach the target rate, calculating the growth rate of the silicon carbide crystal according to the growth image of the silicon carbide crystal after the temperature of the preset position reaches the target temperature, and controlling the working conditions of the top heater and the plurality of main heaters according to the growth rate of the silicon carbide crystal or the temperature of the preset position, so that the temperature of the preset position and the growth rate of the silicon carbide crystal are always in the target range until the growth of the silicon carbide crystal is finished.
In an alternative embodiment, the image detection module comprises an X-ray machine and a detector respectively arranged at two opposite sides of the crucible.
In an alternative embodiment, the temperature detection module is an infrared thermometer rotatably mounted on the outer side of the crucible and used for rotating under the control of the control module so as to irradiate to the preset position to detect the temperature of the preset position.
In a second aspect, the present invention provides a silicon carbide crystal growth method, based on the silicon carbide crystal growth apparatus according to the foregoing embodiment, comprising:
starting the top heater and the main heater at the highest position to enable the silicon carbide crystal to start growing, enabling the growth rate of the silicon carbide crystal to reach a target rate, and enabling the temperature of the preset part to reach a target temperature;
acquiring a growth image of the silicon carbide crystal to calculate a growth rate of the silicon carbide crystal, and acquiring a temperature of the preset part;
and controlling working conditions of the top heater and the plurality of main heaters according to the growth rate of the silicon carbide crystal or the temperature of the preset part, so that the growth rate of the silicon carbide crystal and the temperature of the preset part are always in a target range until the growth of the silicon carbide crystal is finished.
In an alternative embodiment, the target rate is 50 to 300 μm/h and the target temperature is 1900 to 2400 ℃.
In an alternative embodiment, the step of controlling the working conditions of the top heater and the plurality of main heaters according to the growth rate of the silicon carbide crystal or the temperature of the preset portion specifically includes:
in the case where the growth rate of the silicon carbide crystal is not reduced to a preset ratio or the temperature of the preset portion is not increased by a preset temperature, the power of the top heater is controlled to be gradually reduced while the power of the main heater at the highest portion is controlled to be gradually increased.
In an alternative embodiment, the step of controlling the working conditions of the top heater and the plurality of main heaters according to the growth rate of the silicon carbide crystal or the temperature of the preset portion specifically includes:
and under the condition that the growth rate of the silicon carbide crystal is reduced to a preset proportion or the temperature of the preset part is increased to a preset temperature, controlling the power of the top heater to be unchanged, controlling the power of the main heater at the highest part to be gradually reduced, controlling the main heater at the second highest part to be started, so that the growth rate of the silicon carbide crystal is increased to the target rate again, and enabling the temperature of the preset part to be reduced to the target temperature again.
In an alternative embodiment, after the growth rate of the silicon carbide crystal is increased again to the target rate and the temperature of the preset portion is reduced again to the target temperature, the method further includes:
controlling the power of the main heater at a next highest position to be gradually increased under the condition that the growth rate of the silicon carbide crystal is not reduced to a preset proportion of the target rate again or the temperature of the preset part is not increased to a preset temperature again;
and under the condition that the growth rate of the silicon carbide crystal is reduced to a preset proportion of the target rate or the temperature of the preset part is increased to a preset temperature again, controlling the power of the main heater at the next highest position to be gradually reduced, and starting the main heater below the main heater at the next highest position from top to bottom in sequence until the growth of the silicon carbide crystal is finished.
In an alternative embodiment, the preset proportion is 30% -90% and the preset temperature is 1-20 ℃.
In a third aspect, the present invention provides a silicon carbide crystal prepared by the method for growing a silicon carbide crystal according to the previous embodiment.
The beneficial effects of the embodiment of the invention include, for example:
after starting a top heater and a main heater at the highest position to enable a silicon carbide crystal to start growing, the growth rate of the silicon carbide crystal is calculated by detecting a growth image of the silicon carbide crystal, the temperature of a preset position which is equal to the growth surface of the silicon carbide crystal on the side wall of a crucible is detected, and the working conditions of the top heater and a plurality of main heaters are adjusted according to the growth rate of the silicon carbide crystal or the temperature of the preset position, so that the temperature of the preset position and the growth rate of the silicon carbide crystal are always in a target range until the growth of the silicon carbide crystal is finished. Therefore, the growth rate of the silicon carbide crystal and the temperature of a preset part (namely the temperature of the growth surface of the silicon carbide crystal) are always in a relatively ideal target range, so that defects generated in the growth process of the silicon carbide crystal are reduced, and the growth quality of the silicon carbide crystal is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view showing a structure of a silicon carbide crystal growth apparatus according to a first embodiment of the present invention;
FIG. 2 is a control block diagram of a silicon carbide crystal growth apparatus according to a first embodiment of the present invention;
FIG. 3 is a flowchart showing a method for growing a silicon carbide crystal according to a second embodiment of the present invention;
fig. 4 is a flowchart of a second embodiment of a method for growing silicon carbide crystals according to the present invention.
Icon: 100-crucible; 110-seed crystal; 200-top heater; 300-a main heater; 400-an image detection module; 410-X ray machine; 420-a detector; 500-a temperature detection module; 600-control module.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
First embodiment
Referring to fig. 1 and 2, an embodiment of the present invention provides a silicon carbide crystal growing apparatus for growing high quality silicon carbide crystals (i.e., ingots). The silicon carbide crystal growth apparatus includes a crucible 100, a top heater 200, a plurality of main heaters 300, an image detection module 400, a temperature detection module 500, and a control module 600.
The top wall (i.e., crucible cover) of the crucible 100 is provided inside with a seed crystal 110 for growth of silicon carbide crystals. The top heater 200 is disposed above the top wall of the crucible 100. The plurality of main heaters 300 are disposed at the outer side of the crucible 100 and are arranged at intervals along the axial direction of the crucible 100, i.e., the plurality of main heaters 300 are sequentially arranged at intervals from top to bottom.
The image detection module 400 is provided outside the crucible 100 for detecting a growth image of the silicon carbide crystal. The temperature detection module 500 is disposed outside the crucible 100, and is configured to detect a temperature of a preset portion of a sidewall of the crucible 100, where the preset portion is equal to a growth surface of the silicon carbide crystal.
The control module 600 communicates with the image detection module 400, the temperature detection module 500, the top heater 200 and the plurality of main heaters 300 simultaneously, and is configured to start growing the silicon carbide crystal by turning on the top heater 200 and the main heater 300 at the highest position, and to enable the growth rate of the silicon carbide crystal to reach the target rate, calculate the growth rate of the silicon carbide crystal according to the growth image of the silicon carbide crystal after the temperature of the preset portion reaches the target temperature, and control the working conditions of the top heater 200 and the plurality of main heaters 300 according to the growth rate of the silicon carbide crystal or the temperature of the preset portion, so that the temperature of the preset portion and the growth rate of the silicon carbide crystal are always within the target range until the growth of the silicon carbide crystal is completed.
Wherein, the top heater 200 and the plurality of main heaters 300 are graphite heaters, and heat can be generated after power is applied, thereby heating the crucible 100. The control module 600 may be of different types, such as a PLC, a single-chip microcomputer, or a computer, etc., as desired.
The image detection module 400 may have different structures according to needs, and in this embodiment, the image detection module 400 includes an X-ray apparatus 410 and a detector 420 respectively disposed on two opposite sides of the crucible 100. The X-ray emitted by the X-ray machine 410 may penetrate through the crucible 100 and then be received by the detector 420, so that the detector 420 obtains a growth image of the silicon carbide crystal on the seed crystal 110 and sends the growth image to the control module 600, so that the control module 600 processes the growth image of the silicon carbide crystal (the related image processing algorithm is the prior art), thereby calculating the height position and the growth rate of the growth surface of the silicon carbide crystal.
The temperature detection module 500 may adopt different structures according to the need, and in this embodiment, the temperature detection module 500 is an infrared thermometer. The infrared thermometer is rotatably installed at the outer side of the crucible 100 for rotating under the control of the control module 600 to be directed to a preset location to detect the temperature of the preset location and transmit to the control module 600, so that the control module 600 obtains the temperature of the preset location. Since the growth environment of the silicon carbide crystal is in a relatively closed space (i.e., crucible 100), the temperature of the growth surface of the silicon carbide crystal cannot be directly measured. However, the temperature of the growth surface of the silicon carbide crystal is closest to the temperature of the predetermined portion on the side wall of the crucible 100, which is equal to the height thereof, so that the temperature of the predetermined portion may be equal to the temperature of the growth surface of the silicon carbide crystal, and the temperature of the predetermined portion is obtained, that is, the temperature of the growth surface of the silicon carbide crystal is obtained. In addition, the growth surface of the silicon carbide crystal is continuously lowered, so that the preset position on the side wall of the crucible 100 is also continuously lowered, and the infrared thermometer can rotate under the control of the control module 600 by setting the infrared thermometer into a rotatable structure, so that the infrared thermometer can track the temperature of the preset position with the continuously lowered detection position, and the temperature of the growth surface of the silicon carbide crystal is tracked and detected.
After the top heater 200 and the main heater 300 at the highest position are started to start the growth of the silicon carbide crystal, the growth rate of the silicon carbide crystal is calculated by detecting the growth image of the silicon carbide crystal, the temperature of a preset position on the side wall of the crucible 100, which is equal to the growth surface of the silicon carbide crystal, is detected, and the working conditions of the top heater 200 and the plurality of main heaters 300 are adjusted according to the growth rate of the silicon carbide crystal or the temperature of the preset position, so that the temperature of the preset position and the growth rate of the silicon carbide crystal are always in a target range until the growth of the silicon carbide crystal is finished. Therefore, the growth rate of the silicon carbide crystal and the temperature of a preset part (namely the temperature of the growth surface of the silicon carbide crystal) are always in a relatively ideal target range, so that defects generated in the growth process of the silicon carbide crystal are reduced, and the growth quality of the silicon carbide crystal is improved.
Second embodiment
Referring to fig. 3 and 4, the present invention also provides a silicon carbide crystal growth method, which is performed by a control module 600 of the silicon carbide crystal growth apparatus based on the silicon carbide crystal growth apparatus provided in the first embodiment. The silicon carbide crystal growth method specifically comprises the following steps:
step S100: the top heater 200 and the main heater 300 at the highest place are turned on to start the growth of the silicon carbide crystal and to make the growth rate of the silicon carbide crystal reach the target rate, and the temperature of the preset portion reaches the target temperature.
Wherein the target rate is 50 to 300 μm/h, specifically 60 μm/h, 80 μm/h, 100 μm/h, 120 μm/h, 150 μm/h, 180 μm/h, 200 μm/h, 220 μm/h, 250 μm/h or 280 μm/h. The target temperature is 1900-2400 ℃, specifically 2000 ℃, 2100 ℃, 2200 ℃ or 2300 ℃. The turn-on of the top heater 200 and the uppermost main heater 300 is controlled by the control module 600.
Step S200: a growth image of the silicon carbide crystal is acquired to calculate a growth rate of the silicon carbide crystal, and a temperature of a predetermined portion is acquired. After the control module 600 receives the growth image of the silicon carbide crystal detected by the image detection module 400, the growth rate of the silicon carbide crystal and the height position of the growth surface of the silicon carbide crystal are calculated by processing the growth image by using a pre-stored image processing algorithm, so that the height position of the preset part is calculated, the temperature detection module 500 is controlled to detect the temperature of the preset part, and the temperature detection module 500 sends the temperature of the preset part to the control module 600, so that the control module 600 can obtain the growth rate of the silicon carbide crystal and the temperature of the preset part (i.e. the temperature of the growth surface of the silicon carbide crystal).
Step S300: the operating conditions of the top heater 200 and the plurality of main heaters 300 are controlled according to the growth rate of the silicon carbide crystal or the temperature of the preset portion so that the growth rate of the silicon carbide crystal and the temperature of the preset portion are always within the target range until the growth of the silicon carbide crystal is completed.
In detail, the step S300 specifically includes:
in the case where the growth rate of the silicon carbide crystal is not reduced to the preset proportion of the target rate or the temperature at the preset site is not increased by the preset temperature, step S310 is performed:
the power of the top heater 200 is controlled to gradually decrease (limit is off) while the power of the main heater 300 at the highest level is controlled to gradually increase. In the growth process of the silicon carbide crystal, along with the consumption of silicon carbide powder at the corresponding position of the main heater 300 at the highest position, the growth rate of the silicon carbide crystal is inevitably and rapidly reduced, and meanwhile, the growth surface of the silicon carbide crystal is gradually reduced, and the temperature of a preset part is gradually increased, so that the power of the top heater 200 is gradually reduced, and meanwhile, the power of the main heater 300 at the highest position is gradually increased, the temperature gradient of the crucible 100 in the axial direction can be increased, a plurality of defects caused by the excessively rapid reduction of the growth rate of the silicon carbide crystal can be avoided, and meanwhile, the temperature of the growth surface of the silicon carbide crystal is reduced, so that the growth rate of the silicon carbide crystal and the temperature of the growth surface are maintained within a target range, and the growth quality of the silicon carbide crystal is improved.
However, even if the above-described steps are employed, the growth rate of the silicon carbide crystal is gradually reduced, and the temperature of the growth surface of the silicon carbide crystal is gradually increased, so that in the case where the growth rate of the silicon carbide crystal is reduced to a preset ratio of the target rate or the temperature of the preset portion is increased by a preset temperature, step S320 is performed:
the power of the top heater 200 is controlled to be unchanged, the power of the main heater 300 at the highest position is controlled to be gradually reduced (the limit is closed), and the main heater 300 at the next highest position is controlled to be turned on (the main heater 300 at the next highest position can also be turned on for preheating in advance to ensure the temperature rising rate) so as to lead the growth rate of the silicon carbide crystal to be increased to the target rate again and lead the temperature of the preset position to be reduced to the target temperature again. The reduction of the power of the main heater 300 at the highest position can reduce the temperature of the growth surface of the silicon carbide crystal to the target temperature again, and the heating sublimation of the silicon carbide powder at the corresponding position can be realized by starting the main heater 300 at the next highest position, so that the growth rate of the silicon carbide crystal is improved to the target rate again.
After the growth rate of the silicon carbide crystal is again increased to the target rate and the temperature of the preset portion is again reduced to the target temperature, the growth rate of the silicon carbide crystal is inevitably reduced again with the consumption of the silicon carbide powder at the corresponding portion, and step S322 is performed: the power of the main heater 300 at the control sub-high is gradually increased. In this way, the growth rate of the silicon carbide crystal can be prevented from being reduced too fast, and the growth quality of the silicon carbide crystal can be improved.
With the consumption of the silicon carbide powder at the corresponding position of the main heater 300 at the next highest position, the growth rate of the silicon carbide crystal must be reduced again, the temperature of the preset position must also be increased again, and under the condition that the growth rate of the silicon carbide crystal is reduced again to the preset proportion of the target rate or the temperature of the preset position is increased again by the preset temperature, the power of the main heater 300 at the next highest position is controlled to be gradually reduced, and the main heater 300 below the main heater 300 at the next highest position is sequentially started from top to bottom until the growth of the silicon carbide crystal is finished.
For example, if there are three main heaters 300, the lowest main heater 300 (i.e., the main heater 300 below the next highest main heater 300) is turned on, and the silicon carbide powder at the corresponding position of the lowest main heater 300 is exhausted, and the growth of the silicon carbide crystal is completed.
If there are four main heaters 300, the third main heater 300 from top to bottom is turned on to increase the growth rate of the silicon carbide crystal again to the target rate, the temperature of the preset portion is reduced again to the target temperature, and then the power of the third main heater 300 from top to bottom is controlled to be gradually increased. When the growth rate of the silicon carbide crystal is reduced to the preset proportion of the target rate again or the temperature of the preset part is increased by the preset temperature again, the power of the third main heater 300 from top to bottom is controlled to be gradually reduced, and the lowest main heater 300 (the fourth main heater from top to bottom) is started. And the silicon carbide powder is exhausted to the corresponding part of the main heater 300 at the lowest position, and the growth of the silicon carbide crystal is finished.
If there are more than five main heaters 300, the control is similar.
Here, if the number of main heaters 300 is only two, the top heater 200 and the two main heaters 300 may be turned off after the silicon carbide powder at the corresponding portions of the main heaters 300 at the next highest position is consumed, and the silicon carbide crystal growth is completed, i.e., step S322 is not required to be performed.
The target range is determined according to practical experience or requirements, and if the growth rate of the silicon carbide crystal and the temperature of a preset part are maintained within the range, the growth quality of the silicon carbide crystal is optimal. The preset proportion is 30% -90%, and can be 40%, 50%, 60%, 70% or 80%. The preset temperature is 1-20deg.C, specifically 2 deg.C, 4 deg.C, 6 deg.C, 8 deg.C, 10 deg.C, 12 deg.C, 15 deg.C or 18 deg.C.
The silicon carbide crystal growth method can ensure that the growth rate of the silicon carbide crystal and the temperature of a preset part (namely the temperature of the growth surface of the silicon carbide crystal) are always maintained in a comparatively ideal target range in the growth process of the silicon carbide crystal, thereby reducing the defects of the silicon carbide crystal and improving the growth quality of the silicon carbide crystal.
Third embodiment
The invention provides a silicon carbide crystal which is prepared by adopting the silicon carbide crystal growth method provided by the second embodiment, so that the silicon carbide crystal has the characteristics of few defects and high quality.
The present invention is not limited to the above embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention.
Claims (10)
1. A silicon carbide crystal growth apparatus, comprising:
a crucible (100), wherein a seed crystal (110) for growing silicon carbide crystals is arranged on the inner side of the top wall of the crucible (100);
a top heater (200), the top heater (200) being disposed above a top wall of the crucible (100);
a plurality of main heaters (300), wherein the plurality of main heaters (300) are arranged outside the crucible (100) and are distributed at intervals along the axial direction of the crucible (100);
an image detection module (400), wherein the image detection module (400) is arranged on the outer side of the crucible (100) and is used for detecting a growth image of the silicon carbide crystal;
the temperature detection module (500) is arranged at the outer side of the crucible (100) and is used for detecting the temperature of a preset part of the side wall of the crucible (100), wherein the preset part is a part with the same height as the growth surface of the silicon carbide crystal;
and the control module (600) is in communication with the image detection module (400), the temperature detection module (500), the top heater (200) and the plurality of main heaters (300) at the same time, and is used for starting the top heater (200) and the main heater (300) at the highest position to enable the growth of the silicon carbide crystal to be started, enabling the growth rate of the silicon carbide crystal to reach a target rate, calculating the growth rate of the silicon carbide crystal according to a growth image of the silicon carbide crystal after the temperature of the preset position reaches the target temperature, and controlling the working conditions of the top heater (200) and the plurality of main heaters (300) according to the growth rate of the silicon carbide crystal or the temperature of the preset position so that the temperature of the preset position and the growth rate of the silicon carbide crystal are always in the target range until the growth of the silicon carbide crystal is ended.
2. The silicon carbide crystal growth apparatus of claim 1, wherein the image detection module (400) includes an X-ray machine (410) and a detector (420) disposed on opposite sides of the crucible (100), respectively.
3. The silicon carbide crystal growth apparatus of claim 1, wherein the temperature detection module (500) is an infrared thermometer rotatably mounted on an outer side of the crucible (100) for rotation under control of the control module (600) to be directed to the predetermined location to detect the temperature of the predetermined location.
4. A silicon carbide crystal growth method, characterized by comprising, based on the silicon carbide crystal growth apparatus according to any one of claims 1 to 3:
turning on the top heater (200) and the main heater (300) at the highest position to start growth of silicon carbide crystal, and enabling the growth rate of the silicon carbide crystal to reach a target rate, wherein the temperature of the preset part reaches a target temperature;
acquiring a growth image of the silicon carbide crystal to calculate a growth rate of the silicon carbide crystal, and acquiring a temperature of the preset part;
and controlling working conditions of the top heater (200) and the plurality of main heaters (300) according to the growth rate of the silicon carbide crystal or the temperature of the preset part so that the growth rate of the silicon carbide crystal and the temperature of the preset part are always in a target range until the growth of the silicon carbide crystal is finished.
5. A silicon carbide crystal growth method according to claim 4, wherein the target rate is 50 to 300 μm/h and the target temperature is 1900 to 2400 ℃.
6. The method of growing silicon carbide crystal according to claim 4, wherein the step of controlling the operating conditions of the top heater (200) and the plurality of main heaters (300) according to the growth rate of the silicon carbide crystal or the temperature of the preset portion specifically comprises:
in the case where the growth rate of the silicon carbide crystal is not reduced to a preset proportion of the target rate or the temperature of the preset portion is not increased by a preset temperature, the power of the top heater (200) is controlled to be gradually reduced while the power of the main heater (300) at the highest portion is controlled to be gradually increased.
7. The method of growing silicon carbide crystal according to claim 4, wherein the step of controlling the operating conditions of the top heater (200) and the plurality of main heaters (300) according to the growth rate of the silicon carbide crystal or the temperature of the preset portion specifically comprises:
and under the condition that the growth rate of the silicon carbide crystal is reduced to a preset proportion of the target rate or the temperature of the preset part is increased by a preset temperature, controlling the power of the top heater (200) to be unchanged, controlling the power of the main heater (300) at the highest position to be gradually reduced, controlling the main heater (300) at the second highest position to be started so as to enable the growth rate of the silicon carbide crystal to be increased to the target rate again and enable the temperature of the preset part to be reduced to the target temperature again.
8. The method of growing a silicon carbide crystal according to claim 7, further comprising, after the growth rate of the silicon carbide crystal is raised again to the target rate and the temperature of the predetermined portion is lowered again to the target temperature:
controlling the power of the main heater (300) at a next highest level to be gradually increased in the case where the growth rate of the silicon carbide crystal is not reduced again to a preset proportion of the target rate or the temperature of the preset portion is not increased again by a preset temperature;
and under the condition that the growth rate of the silicon carbide crystal is reduced to a preset proportion of the target rate or the temperature of the preset part is increased to a preset temperature again, controlling the power of the main heater (300) at the next highest position to gradually reduce, and starting the main heater (300) below the main heater at the next highest position from top to bottom in sequence until the growth of the silicon carbide crystal is finished.
9. A silicon carbide crystal growth method according to any of claims 6 to 8, wherein said predetermined ratio is 30% to 90%, and said predetermined temperature is 1 to 20 ℃.
10. A silicon carbide crystal prepared by the method of any one of claims 4 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310703657.3A CN116695238B (en) | 2023-06-14 | 2023-06-14 | Silicon carbide crystal growth device and method and silicon carbide crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310703657.3A CN116695238B (en) | 2023-06-14 | 2023-06-14 | Silicon carbide crystal growth device and method and silicon carbide crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116695238A true CN116695238A (en) | 2023-09-05 |
| CN116695238B CN116695238B (en) | 2024-03-22 |
Family
ID=87835410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310703657.3A Active CN116695238B (en) | 2023-06-14 | 2023-06-14 | Silicon carbide crystal growth device and method and silicon carbide crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116695238B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110095433A (en) * | 2010-02-19 | 2011-08-25 | 네오세미테크 주식회사 | A control system of real-time growth rate by weight measurement method for high quality silicon carbide single crystal |
| CN115074821A (en) * | 2022-04-29 | 2022-09-20 | 连城凯克斯科技有限公司 | Thermal field structure and method for growing silicon carbide by graphite resistance heating |
| CN115787072A (en) * | 2022-12-02 | 2023-03-14 | 中材人工晶体研究院有限公司 | Temperature control system, method and device and crystal preparation device |
| CN218666400U (en) * | 2022-11-14 | 2023-03-21 | 湖南三安半导体有限责任公司 | Silicon carbide single crystal growth equipment |
-
2023
- 2023-06-14 CN CN202310703657.3A patent/CN116695238B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110095433A (en) * | 2010-02-19 | 2011-08-25 | 네오세미테크 주식회사 | A control system of real-time growth rate by weight measurement method for high quality silicon carbide single crystal |
| CN115074821A (en) * | 2022-04-29 | 2022-09-20 | 连城凯克斯科技有限公司 | Thermal field structure and method for growing silicon carbide by graphite resistance heating |
| CN218666400U (en) * | 2022-11-14 | 2023-03-21 | 湖南三安半导体有限责任公司 | Silicon carbide single crystal growth equipment |
| CN115787072A (en) * | 2022-12-02 | 2023-03-14 | 中材人工晶体研究院有限公司 | Temperature control system, method and device and crystal preparation device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116695238B (en) | 2024-03-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3276050B1 (en) | Method for producing silicon carbide single crystal | |
| JP2001257169A (en) | Temperature control method of machining chamber, semiconductor machining device, and sensor calibration method | |
| JP5925319B2 (en) | SiC single crystal manufacturing apparatus and SiC single crystal manufacturing method | |
| KR101048831B1 (en) | Graphite heater for producing single crystal, single crystal manufacturing device and single crystal manufacturing method | |
| JP4853802B2 (en) | Method for producing silicon single crystal | |
| JP5544988B2 (en) | Method for producing silicon carbide single crystal | |
| CN110875208A (en) | Temperature control device and method for process chamber and process chamber | |
| CN116695238B (en) | Silicon carbide crystal growth device and method and silicon carbide crystal | |
| KR20130124024A (en) | Apparatus for growing large diameter single crystal and method for growing using the same | |
| JPH09246200A (en) | Heating method and radiant heater | |
| JP5920156B2 (en) | Epitaxial wafer manufacturing method | |
| KR100297575B1 (en) | Single crystal production method and drawing device | |
| JP5437565B2 (en) | Semiconductor single crystal manufacturing equipment | |
| CN108286074A (en) | A kind of large scale SiC single crystal grower and its working method | |
| JP3074312B2 (en) | Vapor growth method | |
| CN212533200U (en) | Crucible and growing device for growing silicon carbide single crystal | |
| JP5783230B2 (en) | Method for producing silicon carbide single crystal | |
| JP3514254B2 (en) | Heat treatment apparatus and method for manufacturing silicon epitaxial wafer | |
| JP3901155B2 (en) | Vapor phase growth method and vapor phase growth apparatus | |
| CN220731450U (en) | Constant temperature system of etching equipment and etching equipment | |
| US20190136404A1 (en) | Method for producing a semiconductor wafer of monocrystalline silicon, device for producing a semiconductor wafer of monocrystalline silicon and semiconductor wafer of monocrystalline silicon | |
| JP2004260097A (en) | Method for thermally processing semiconductor | |
| CN114959889A (en) | Temperature compensation device, system and method for reaction chamber | |
| JP2012206876A (en) | APPARATUS FOR GROWING SiC | |
| EP4294968A1 (en) | Methods and systems of capturing transient thermal responses of regions of crystal pullers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |