CN116695129A - Method for chemically cleaning aluminum alloy with ultrahigh cleanliness - Google Patents
Method for chemically cleaning aluminum alloy with ultrahigh cleanliness Download PDFInfo
- Publication number
- CN116695129A CN116695129A CN202211567320.6A CN202211567320A CN116695129A CN 116695129 A CN116695129 A CN 116695129A CN 202211567320 A CN202211567320 A CN 202211567320A CN 116695129 A CN116695129 A CN 116695129A
- Authority
- CN
- China
- Prior art keywords
- cleaning
- water
- washing
- degreasing
- aluminum alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 135
- 238000000034 method Methods 0.000 title claims abstract description 37
- 230000003749 cleanliness Effects 0.000 title claims abstract description 24
- 229910000838 Al alloy Inorganic materials 0.000 title claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 127
- 238000005406 washing Methods 0.000 claims description 70
- 239000002253 acid Substances 0.000 claims description 44
- 238000005238 degreasing Methods 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 25
- 238000005507 spraying Methods 0.000 claims description 23
- 239000007921 spray Substances 0.000 claims description 21
- 238000005498 polishing Methods 0.000 claims description 17
- 238000005237 degreasing agent Methods 0.000 claims description 10
- 239000013527 degreasing agent Substances 0.000 claims description 10
- 238000004806 packaging method and process Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 8
- 238000002791 soaking Methods 0.000 claims description 8
- 238000005554 pickling Methods 0.000 claims description 7
- 238000000861 blow drying Methods 0.000 claims description 6
- 244000137852 Petrea volubilis Species 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims description 5
- 239000013072 incoming material Substances 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 5
- 229920000742 Cotton Polymers 0.000 claims description 4
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 claims description 4
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 claims description 4
- 230000007547 defect Effects 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000007670 refining Methods 0.000 claims description 4
- 239000004677 Nylon Substances 0.000 claims description 3
- 230000002159 abnormal effect Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 229920001778 nylon Polymers 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 244000241257 Cucumis melo Species 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 7
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001431 copper ion Inorganic materials 0.000 abstract description 2
- 239000003344 environmental pollutant Substances 0.000 abstract description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 abstract description 2
- 231100000719 pollutant Toxicity 0.000 abstract description 2
- 229910021654 trace metal Inorganic materials 0.000 abstract description 2
- 239000000126 substance Substances 0.000 description 4
- 241000219112 Cucumis Species 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000003020 moisturizing effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
Abstract
A method for chemically cleaning an aluminum alloy with ultra-high cleanliness belongs to the field of cleaning of IC with ultra-high cleanliness, and can effectively ensure that the surface of a part meets the use requirement of semiconductor with high cleanliness. Trace metal pollutants on the surface of the part after cleaning are detected by ICP-MS, and the content of copper ions which are most sensitive to IC equipment is less than 10E10atoms/cm 2 The method is an aluminum alloy ultra-high cleanliness cleaning method with high reliability and operability, and the parts can meet the use requirements in an ultra-high vacuum clean environment after cleaning.
Description
Technical Field
The invention belongs to the field of ultra-high cleanliness cleaning of IC semiconductors, and particularly relates to a chemical cleaning method with high reliability and operability for ultra-high cleanliness of aluminum alloy.
Background
The cleanliness requirements of semiconductor materials in the IC field are very strict, and the cleanliness of semiconductor equipment parts directly relates to the quality of processed wafer products. The semiconductor device parts are made of aluminum alloy, and the aluminum alloy is subjected to a proper chemical cleaning process to ensure the realization of ultrahigh cleanliness. Unclean equipment or workpieces can carry large amounts of contaminants and other metal ions, which can have a significant impact on the etching or deposition process of semiconductor processing, and once packaged, can contaminate other vacuum connection cavities, which can be costly to restore cleanliness and to troubleshoot contamination sources.
Disclosure of Invention
The invention relates to a chemical cleaning method for an aluminum alloy with ultrahigh cleanliness.
The technical scheme adopted by the invention for achieving the purpose is as follows:
a method for chemically cleaning an aluminum alloy with ultra-high cleanliness comprises the following cleaning procedures:
polishing, first degreasing cleaning, cleaning cotton swabs in hanging holes by using an organic solvent twice, first high-pressure water cleaning, second degreasing cleaning, first water cleaning, first spray water cleaning, first acid etching, second water cleaning, second water spraying cleaning, first acid cleaning, third water spraying cleaning, overflow pure water cleaning, second high-pressure water cleaning, third degreasing cleaning, first special beaker overflow water cleaning, fourth spray water cleaning, second acid etching, second special beaker overflow water cleaning, fifth spray water cleaning, second acid cleaning, fourth spray water cleaning, sixth spray water cleaning, ultrasonic pure water cleaning, overflow and N2 blow drying, and packaging.
Further preferably, the method comprises the steps of firstly mechanically polishing and grinding the incoming material, primarily polishing the incoming material by sand paper, and refining surface grains by using the melon cloth after no defects are visible to naked eyes, wherein the surface roughness Ra is less than 0.8 mu m.
Further preferably, after polishing, it is confirmed that the surface of the part is not abnormal, the degreasing agent is used for pre-cleaning for 10-30min for the first degreasing cleaning, the surface is cleaned to be dirty, high-pressure water is used for cleaning if necessary, and a steam gun can also be used for cleaning the inside of the small hole station.
The further preferable scheme is that 2 times of water film continuity detection are required after the first degreasing and cleaning to ensure that the surface of the part is clean and free of greasy dirt; after the first degreasing and cleaning, cleaning the surfaces, hanging points and hanging tools of the parts by using an organic solvent in a thousands-level clean room for more than 2 times, and then cleaning the parts by using high-pressure water in the clean room for the first time; after the parts are cleaned by the first high-pressure water, the second degreasing cleaning is carried out again by using a clean degreasing agent, and then the first water washing and the first water spraying and washing are carried out, and the overflow water washing is carried out.
Further preferably, the first acid etching adopts mixed acid for acid etching for 10-120s, and then the second water washing and the second water spraying washing are carried out for 2-3min; acid washing for the first time by HNO 3 Pickling for 10-60min, washing with water for 2-3min for the third time, and washing with water for the third time; then, the parts were placed in overflow pure water for soaking for 4-6 hours.
Further preferably, after the soaking is finished, the second high-pressure water cleaning process is carried out, the third degreasing cleaning process is carried out again, and then the first special beaker overflow water cleaning and the fourth spray water cleaning process are carried out; and then carrying out acid etching for the second time, adopting overflow water washing of a special beaker for the second time and fifth water spraying after the acid etching for the second time, and then carrying out acid washing operation for the second time.
Further preferably, after the second pickling and washing is completed, the fourth washing and the sixth spraying and washing are performed; then, ultrasonic pure water washing and overflow are carried out, the water quality resistivity is more than 2MΩ for 2-4 hours, and clean N2 nitrogen is used for blow drying.
Further preferably, the packaging is carried out after the N2 is dried, the inner nylon bag is adopted for packaging, the inner side of the PE bag cannot be touched, and the outer layer is packaged in a PE bag vacuum way.
The invention has the advantages that: the cleaning method has higher reliability and operability, and can effectively ensure that the surface of the part meets the use requirement of high cleanliness of the semiconductor. Trace metal pollutants on the surface of the part after cleaning are detected by ICP-MS, and the content of copper ions which are most sensitive to IC equipment is less than 10E10atoms/cm 2 Other elements are also well below the international standard level of trace contaminants commonly used in the IC field.
Detailed Description
The present invention will be described in further detail with reference to examples.
A method for chemically cleaning an aluminum alloy with ultra-high cleanliness comprises the following cleaning procedures: polishing, first degreasing cleaning, cleaning cotton swabs in hanging holes by using an organic solvent twice, first high-pressure water cleaning, second degreasing cleaning, first water cleaning, first spray water cleaning, first acid etching, second water cleaning, second water spraying cleaning, first acid cleaning, third water spraying cleaning, overflow pure water cleaning, second high-pressure water cleaning, third degreasing cleaning, first special beaker overflow water cleaning, fourth spray water cleaning, second acid etching, second special beaker overflow water cleaning, fifth spray water cleaning, second acid cleaning, fourth spray water cleaning, sixth spray water cleaning, ultrasonic pure water cleaning, overflow and N2 blow drying, and packaging.
Examples
Further preferably, the method comprises the steps of firstly mechanically polishing and grinding the incoming material, primarily polishing the incoming material by sand paper, and refining surface grains by using the melon cloth after no defects are visible to naked eyes, wherein the surface roughness Ra is less than 0.8 mu m.
Further preferably, after polishing, it is confirmed that the surface of the part is not abnormal, the degreasing agent is used for pre-cleaning for 10-30min for the first degreasing cleaning, the surface is cleaned to be dirty, high-pressure water is used for cleaning if necessary, and a steam gun can also be used for cleaning the inside of the small hole station.
The further preferable scheme is that 2 times of water film continuity detection are required after the first degreasing and cleaning to ensure that the surface of the part is clean and free of greasy dirt; after the first degreasing and cleaning, cleaning the surfaces, hanging points and hanging tools of the parts by using an organic solvent in a thousands-level clean room for more than 2 times, and then cleaning the parts by using high-pressure water in the clean room for the first time; after the parts are cleaned by the first high-pressure water, the second degreasing cleaning is carried out again by using a clean degreasing agent, and then the first water washing and the first water spraying and washing are carried out, and the overflow water washing is carried out.
Further preferably, the first acid etching adopts mixed acid for acid etching for 10-120s, and then the second water washing and the second water spraying washing are carried out for 2-3min; acid washing for the first time by HNO 3 Pickling for 10-60min, then washing for 2-3min for the third time, and washing by spraying water for the third time; then, the parts were placed in overflow pure water for soaking for 4-6 hours.
Further preferably, after the soaking is finished, the second high-pressure water cleaning process is carried out, the third degreasing cleaning process is carried out again, and then the first special beaker overflow water cleaning and the fourth spray water cleaning process are carried out; and then carrying out acid etching for the second time, adopting overflow water washing of a special beaker for the second time and fifth water spraying after the acid etching for the second time, and then carrying out acid washing operation for the second time.
Further preferably, after the second pickling and washing is completed, the fourth washing and the sixth spraying and washing are performed; then, ultrasonic pure water washing and overflow are carried out, the water quality resistivity is more than 2MΩ for 2-4 hours, and clean N2 nitrogen is used for blow drying.
Further preferably, the packaging is carried out after the N2 is dried, the inner nylon bag is adopted for packaging, the inner side of the PE bag cannot be touched, and the outer layer is packaged in a PE bag vacuum way.
Examples
Taking aluminum alloy 6061 as an example, the dimension phi 50 multiplied by 6.35mm, and the part with 1 phi 3mm through hole.
1. And (3) rough polishing is carried out on the outer surface of the part by using a polishing machine plus 600-mesh sand paper until the surface roughness Ra of the part is less than 1.6 mu m. And (3) finely polishing the surface of the part by using a polisher and a melon cloth, refining surface grains, and polishing until the surface roughness Ra of the part is less than 0.8 mu m. The hanging point is polished by using a pneumatic pen and 600-mesh sand paper, so that the appearance defects such as surface scratches, pits and the like are removed.
2. And confirming that the polished part surface has no appearance abnormality such as collision scratch and the like. And (3) placing the parts in a degreasing agent for pre-cleaning for 10-30 minutes, and removing dust and dirt generated in the polishing process of the surfaces of the parts. And cleaning the through hole of the part by using a steam gun to remove polishing dust and dirt mixed in the hole.
3. Placing the degreased and cleaned part in a water washing tank, washing to remove the degreasing agent remained on the surface of the part, and detecting the continuity of the water film for 2 times after washing to ensure the surface of the part to be clean and free of greasy dirt.
4. And transferring the parts subjected to the first degreasing and cleaning to a thousand-level clean room in a moisturizing mode, wiping the surfaces of the parts by using dust-free cloth and an organic solvent, wiping the through holes by using a cotton swab and the organic solvent, and wiping the whole parts for 2 times. And then cleaning the parts in a thousand-level clean room by using high-pressure water, adjusting the orientation of a high-pressure water gun nozzle in the cleaning process, ensuring that the parts are effectively cleaned everywhere, and controlling the moving speed of the high-pressure water gun to be 2-3mm/s.
5. Placing the parts subjected to high-pressure water washing in a clean degreasing agent for secondary degreasing and cleaning, placing the parts in a water washing tank for water washing after cleaning for 10-30 minutes, removing the degreasing agent remained on the surfaces, and then washing the surfaces of the parts in a water spraying and washing mode.
6. Placing the degreased and washed part in a mixed acid solution for acid etching treatment, removing an oxide layer on the surface of the part, wherein the acid etching treatment time is 10-120s. And then carrying out secondary water washing and water spraying washing in the clean room, wherein the water washing time is 2-3 minutes, and removing mixed acid remained on the surfaces of the parts.
7. And (3) placing the part subjected to acid etching and water washing in a nitric acid solution for acid washing, removing salt substances on the surface of the part and byproducts generated by acid etching for 10-60 minutes, placing the part in a water washing tank for third water washing and water spraying washing in a clean room after acid washing, and removing the nitric acid solution remained on the surface of the part. After water spraying and washing, the parts are placed in pure water for soaking, and overflow is started in the soaking process for 4-6 hours.
8. And (5) performing second high-pressure water washing in the clean room on the soaked parts, and degreasing and cleaning again. Then the first special clean beaker overflow water washing and the fourth spray water washing are carried out.
9. And (3) carrying out second acid etching on the part subjected to cleaning, adopting a second special beaker overflow water washing and a fifth spray water washing after the acid etching, removing residual acid on the surface of the part, and then carrying out second nitric acid cleaning.
And 10, hanging the part on a clean lifting hook after the secondary pickling is finished, and carrying out the fourth water washing and the sixth water spraying. Then ultrasonic washing is carried out, overflow is started in the ultrasonic washing process, and the water quality resistivity in the ultrasonic washing tank is more than 2MΩ after 2-4 hours. After ultrasonic cleaning is completed, clean nitrogen is used for purging the surface of the part, and drying of the surface and the inside of the hole of the part is ensured.
Claims (8)
1. The method for chemically cleaning the aluminum alloy with ultra-high cleanliness is characterized by comprising the following cleaning procedures:
polishing, first degreasing cleaning, cleaning cotton swabs in hanging holes by using an organic solvent twice, first high-pressure water cleaning, second degreasing cleaning, first water cleaning, first spray water cleaning, first acid etching, second water cleaning, second water spraying cleaning, first acid cleaning, third water spraying cleaning, overflow pure water cleaning, second high-pressure water cleaning, third degreasing cleaning, first special beaker overflow water cleaning, fourth spray water cleaning, second acid etching, second special beaker overflow water cleaning, fifth spray water cleaning, second acid cleaning, fourth spray water cleaning, sixth spray water cleaning, ultrasonic pure water cleaning, overflow and N2 blow drying, and packaging.
2. The method for chemically cleaning the ultra-high cleanliness of the aluminum alloy according to claim 1, wherein the method comprises the following steps:
firstly, mechanically polishing and grinding the incoming material, primarily polishing with sand paper, and refining surface grains with melon cloth after no defects are visible to naked eyes, wherein the surface roughness Ra is less than 0.8 mu m.
3. The method for chemically cleaning the ultra-high cleanliness of the aluminum alloy according to claim 1, wherein the method comprises the following steps:
after polishing, it was confirmed that the surface of the part was not abnormal, the first degreasing and cleaning was performed for 10 to 30 minutes using a degreasing agent, the surface was cleaned, and if necessary, the surface was cleaned with high-pressure water, and the inside of the pinhole station was cleaned with a steam gun.
4. The method for chemically cleaning the ultra-high cleanliness of the aluminum alloy according to claim 1, wherein the method comprises the following steps:
after the first degreasing and cleaning, 2 times of water film continuity detection are required to be carried out, so that the surface of the part is clean and free of greasy dirt; after the first degreasing and cleaning, cleaning the surfaces, hanging points and hanging tools of the parts by using an organic solvent in a thousands-level clean room for more than 2 times, and then cleaning the parts by using high-pressure water in the clean room for the first time; after the parts are cleaned by the first high-pressure water, the second degreasing cleaning is carried out again by using a clean degreasing agent, and then the first water washing and the first water spraying and washing are carried out, and the overflow water washing is carried out.
5. The method for chemically cleaning the ultra-high cleanliness of the aluminum alloy according to claim 1, wherein the method comprises the following steps:
the first acid etching adopts mixed acid for acid etching for 10-120s, and then the second water washing and the second water spraying washing are carried out for 2-3min; acid washing for the first time by HNO 3 Pickling for 10-60min, washing with water for 2-3min for the third time, and washing with water for the third time; then, the parts were placed in overflow pure water for soaking for 4-6 hours.
6. The method for chemically cleaning the aluminum alloy with ultra-high cleanliness according to claim 6, wherein the method comprises the following steps:
after the soaking is finished, performing a second high-pressure water cleaning process, performing degreasing cleaning for the third time again, and then performing overflow water cleaning for the first special beaker and fourth spray water cleaning; and then carrying out second acid etching, adopting a second special beaker overflow water washing and a fifth spray water washing after the second acid etching, and then carrying out second acid washing operation.
7. The method for chemically cleaning the ultra-high cleanliness of the aluminum alloy according to claim 1, wherein the method comprises the following steps:
after the second pickling and washing is finished, carrying out the fourth washing and the sixth spraying and washing; then, ultrasonic pure water washing and overflow are carried out, the water quality resistivity is more than 2MΩ for 2-4 hours, and clean N2 nitrogen is used for blow drying.
8. The method for chemically cleaning the ultra-high cleanliness of the aluminum alloy according to claim 1, wherein the method comprises the following steps:
and packaging after drying N2, wherein an inner nylon bag is adopted for packaging, the inner side of the PE bag cannot be touched, and the outer layer is vacuum-packaged by the PE bag.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202211567320.6A CN116695129A (en) | 2022-12-07 | 2022-12-07 | Method for chemically cleaning aluminum alloy with ultrahigh cleanliness |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202211567320.6A CN116695129A (en) | 2022-12-07 | 2022-12-07 | Method for chemically cleaning aluminum alloy with ultrahigh cleanliness |
Publications (1)
Publication Number | Publication Date |
---|---|
CN116695129A true CN116695129A (en) | 2023-09-05 |
Family
ID=87838092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202211567320.6A Pending CN116695129A (en) | 2022-12-07 | 2022-12-07 | Method for chemically cleaning aluminum alloy with ultrahigh cleanliness |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN116695129A (en) |
-
2022
- 2022-12-07 CN CN202211567320.6A patent/CN116695129A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7195548B1 (en) | Method and apparatus for post-CMP cleaning of a semiconductor work piece | |
US20010008800A1 (en) | Removal of polishing residue from substrate using supercritical fluid process | |
CN110976414A (en) | Ultra-high clean cleaning process for semiconductor aluminum alloy parts | |
CN110335807B (en) | Silicon wafer cleaning method | |
CN109860085B (en) | Silicon wafer CMP post-processing equipment and processing technology | |
CN111900070A (en) | Regeneration cleaning and repairing method for silicon part of semiconductor high-order process etching device | |
JP5294944B2 (en) | Substrate cleaning method | |
CN101376985A (en) | Aluminum product cleaning process | |
CN114211405A (en) | Cleaning method for removing fluoride on surface of aluminum substrate | |
CN102087954A (en) | Wafer cleaning method | |
CN112620230A (en) | Method for cleaning parts | |
KR100654501B1 (en) | Wafer Polishing, Cleaning and Protective Films | |
CN105364699B (en) | Chemical mechanical polishing method and chemical mechanical polishing equipment | |
CN116695129A (en) | Method for chemically cleaning aluminum alloy with ultrahigh cleanliness | |
US7559825B2 (en) | Method of polishing a semiconductor wafer | |
CN112495916A (en) | Cleaning method of chemical mechanical polishing retaining ring | |
JP6971676B2 (en) | Board processing equipment and board processing method | |
KR20110064608A (en) | Wafer cleaning apparatus with spin scrubber and cleaning method thereof | |
CN113714178B (en) | Ultra-clean cleaning process for anodic aluminum oxide and ceramic spraying material electrostatic chuck in cavity of semiconductor equipment | |
CN116351765A (en) | Method for cleaning sandblasted stainless steel with ultra-high cleanliness | |
CN101728228B (en) | Method for removing gummy residuals positioned on front surface of wafer | |
JP2000040684A (en) | Cleaning equipment | |
KR19980073947A (en) | Wafer cleaning method | |
CN112103224A (en) | Cleaning device, method and related apparatus for cleaning silicon wafer undergoing polishing | |
JP2000317411A (en) | Device and method for cleaning and drying |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |