CN116689427A

CN116689427A - Device for extracting pollutants in wafer box

Info

Publication number: CN116689427A
Application number: CN202310710454.7A
Authority: CN
Inventors: 黄梦可; 王轶滢
Original assignee: Shanghai Integrated Circuit Materials Research Institute Co ltd
Current assignee: Shanghai Integrated Circuit Materials Research Institute Co ltd
Priority date: 2023-06-15
Filing date: 2023-06-15
Publication date: 2023-09-05

Abstract

The invention provides a device for extracting pollutants in a wafer box, which comprises a controller, a power device controlled by the controller, a rotating shaft and a connecting shaft, wherein the rotating shaft is connected with the power device; a universal device for controlling the connecting shaft to freely switch directions in the hemispherical direction by sliding the connecting shaft; the connecting shaft is connected with the wafer box and driven by the power device to enable the wafer box to rotate around the axis of the rotating shaft; the gimbal includes: a vertical groove for controlling the connection shaft to slide in a vertical direction to realize a first state rotation of the wafer cassette; the first state is that the wafer box is horizontal with the first surface, and the wafer box rotates around the axis; a horizontal groove for controlling the connecting shaft to slide in a horizontal direction to realize a second state rotation of the wafer cassette; the second state is to make the first face vertical and the wafer cassette rotate around the axis. Has the beneficial technical effects that: the use procedure replaces manual real-time accurate adjustment cleaning process, realizes extraction/cleaning of all wafer boxes in a unified standard, and has low solvent/extraction liquid usage amount and cost saving.

Description

Device for extracting pollutants in wafer box

Technical Field

The invention belongs to the field of cleaning of wafer boxes for integrated circuit manufacturing, and particularly relates to a device for extracting/cleaning pollutants in a wafer box, which improves the cleaning effect and saves the cleaning time.

Background

In the integrated circuit manufacturing process, a large number of wafer cassettes are required to transport wafers, and because the manufacturing process uses a plurality of different kinds of chemicals such as doping ions and the like to cause the aggregation of pollutants in the wafer cassettes, after the manufacture of one batch of integrated circuit products is completed, the wafer cassettes used in the process need to be cleaned to be put into the manufacture of the next batch of integrated circuit products for use.

The liquid contaminants of the wafer cassette mainly include metal impurities, anionic impurities, particulate contaminants, and the like. The existing method for detecting the liquid pollutants in the wafer box mainly adopts a manual or semi-manual full-soaking extraction method, a large amount of solvents are used for washing the inside of the wafer box, sampling is carried out after washing, and pollutant index test is carried out.

Most of wafer boxes used in the existing integrated circuit manufacturing factories are similar to cubes, the internal volume is large, and the full-soaking extraction method has the following problems:

First, the full-soaking extraction method requires a large amount of solvent/extract, wastes solvent/extract, has high cost, and can adopt a static extraction form due to the adoption of the full-soaking form, and cannot be dynamically extracted;

secondly, full manual or semi-manual extraction cleaning is adopted, standardized cleaning cannot be realized, the pollutant level of the extracted cleaning liquid needs to be detected manually in real time to determine that the pollutant in the wafer box is reduced to a qualified level, and the cleaning process is complicated;

thirdly, the extraction cleaning mode cannot be accurately adjusted in real time without adopting a program control means, the cleaning operation wastes time and the cleaning degree is uneven, and the uniformity and the yield of the integrated circuit products in the same batch are easily affected.

Disclosure of Invention

In order to solve the technical problems, the invention provides a mechanical device capable of accurately regulating and controlling extraction/cleaning in real time to replace manual work, the solvent/extract amount is low, the cost is saved, the cleaning process is accurately regulated in real time by using a program, and the uniform and standard cleaning of all wafer boxes is realized.

The invention provides a method for simulating cleaning of pollutants in a wafer box, which comprises the following steps:

step 100: determining a wafer box cleaning element, wherein the wafer box cleaning element comprises an area element, a rib element, a relation between the rib element and the area element and a solvent element of each inner surface of the wafer box;

Step 200: inputting the cleaning elements to simulate the cleaning process so that the cleaning degree of n points on the inner surface of the wafer box is the same;

step 300: the conditions are satisfied and the simulation is stopped.

The cleaning process comprises the solvent amount, the distance of the solvent passing through n points on the inner surface of the wafer box, the pressure of the solvent on the n points on the inner surface of the wafer box, the effective amount of the solvent cleaning component in the process, the cleaning times and the relation formed between any two of the solvent cleaning component and the cleaning times;

the cleaning times at least comprise the cycle times of solvent cleaning;

the conditions include at least a reduction in the increment of the cleaning volume.

Preferably, step 200 includes that the cleaning process after the nth point is cleaned for the nth time satisfies formula (1):

Qnr＝∑qnr{a1*f(d,vnr),a2*s(vnr,r,r’),a3*e(d,r,r’)}

Q1r＝Q2r＝Q3r＝…Qnr (1)

wherein r is the number of times of washing, r is a natural number of 2 or more, e (d, r, r ') < e (d, r-1'); qnr is the cleaning amount of the nth point of the solvent, qnr is the functional relationship among the pressure f of the nth point of the solvent, the path s of the solvent through the nth point and the effective amount e of the cleaning component of the nth point of the solvent, f is the function of the solvent amount d and the nth speed vnr, s is the function of the nth speed vnr and the cleaning frequency r, e is the function of the solvent amount d, the cleaning frequency r and the frequency redundancy r', a1, a2 and a3 are the weight relationships among the pressure f of the nth point of the solvent, the path s of the solvent through the nth point and the effective amount e of the cleaning component of the nth point of the solvent, a1+a2+a3=1 or a1, a2 and a3, and the range of values is 0.1 to 10.

Preferably, the conditions include that qnr, qnr-1, qnr-2 satisfy formula (2):

a5*qnr-2＝qnr+a4*qnr-1 (2)

wherein qnr is the cleaning amount of the solvent for the nth cleaning point, qnr-1 is the cleaning amount of the solvent for the nth cleaning point, qnr-2 is the cleaning amount of the solvent for the nth cleaning point; the value range of a5 is 0.01 to 0.2, and the value range of a4 is 0.1 to 0.3; alternatively, a4 and a5 are positive numbers less than 1, satisfying a5=1/2×a4 ² 。

Preferably, the cleaning process further includes a first state of cleaning four sides of the wafer cassette, and a second state of cleaning the remaining two sides of the wafer cassette.

Preferably, the first state is that the wafer cassette vertically rotates to clean the four faces, and the second state is that the wafer cassette horizontally rotates to clean the two faces; the cleaning process satisfies the formula (3):

ak＝Qi/Qii

Qi＝q{a6*f(d,vi),a6*s(vi),a8*e(d,s)}

Qii＝q{a6*f(d,vii),a7*s(vii),a8*e(d,s)} (3)

wherein, the value range of a is 0.1-10, k is the cleaning area ratio of the first state to the second state, qi is the cleaning degree in the first state, and Qii is the cleaning degree in the second state; the pressure f of the solvent against the inner surface of the wafer cassette is a function of the amount d of solvent and the velocity v of the solvent, the path s of the solvent is a function of the velocity v of the solvent, and the cleaning composition effective amount e is a function of the amount d of solvent and the path s; a6, a7 and a8 are weight relations among the pressure f of the solvent on the inner surface of the wafer box, the path s of the solvent and the effective amount e of the solvent cleaning component, and the range of the values of a6+a7+a8=1 or a6, a7 and a8 is 0.1 to 10.

Preferably, the first state is performed prior to the second state, e (d, s (vi)) ∈e (d, s (vii)).

Preferably, the second state is performed prior to the first state, e (d, s (vi)) +.e (d, s (vii)).

Preferably, the cleaning process further comprises a third state of the cleaning edge, the duration of which is less than the time of use of the second state or the first state.

Preferably, there is only one initial rotational position of the wafer cassette in the second state, and there are several initial rotational positions of the wafer cassette in the first state and the third state.

Preferably, in the first state, the second state, or the third state, the wafer cassette is rotated in the container; alternatively, the wafer cassette is rotated by its own component connection rotation structure.

The method for extracting the pollutants in the wafer box based on the simulation comprises the following steps:

step S1: adding a solvent into the wafer box;

step S2: adjusting to a first state, wherein the wafer box is horizontal and upward with a first surface, rotates around an axis, and cleans four surfaces comprising the first surface;

step S3: adjusting to a second state, enabling the first surface to be vertical, enabling the wafer box to rotate around the axis, and cleaning the remaining two surfaces:

Step S4: adjusting to a third state, inclining the first surface, and rotating the wafer box around the axis to clean a preset area;

step S5: taking out the solvent, and analyzing and calculating the pollutant content level;

the first state and the third state have a plurality of initial rotation positions, the third state has a plurality of intermediate rotation positions, and the first state, the second state and the third state enable the cleaning degree of n points on the inner surface of the wafer box to be the same;

the execution sequence of the steps S2, S3 and S4 is any one of the arrangement combination of the steps S2, S3 and S4.

Preferably, the first face is a top face of the wafer cassette.

Preferably, the predetermined region comprises at least a rib, and/or the rib constitutes a part of a face.

Preferably, in step S1, the wafer cassette is horizontally upward with the first surface, and a solvent is added into the wafer cassette, and the solvent is at least immersed in a bottom surface opposite to the first surface, or at least immersed in a ridge portion of the bottom surface opposite to the first surface.

Preferably, the duration of the first and second states is related to the area ratio of the wash.

ak＝Qi/Qii

Qi＝q{a6*f(d,vi),a6*s(vi),a8*e(d,s)}

Qii＝q{a6*f(d,vii),a7*s(vii),a8*e(d,s)} (3)

Wherein, the value range of a is 0.1-10, k is the cleaning area ratio of the first state to the second state, qi is the cleaning degree in the first state, and Qii is the cleaning degree in the second state; the pressure f of the solvent against the inner surface of the wafer cassette is a function of the amount d of solvent and the velocity v of the solvent, the path s of the solvent is a function of the velocity v of the solvent, and the cleaning composition effective amount e is a function of the amount d of solvent and the path s; a6, a7 and a8 are weight relations among the pressure f of the solvent on the inner surface of the wafer box in the first state or the second state, the distance s of the solvent and the effective amount e of the solvent cleaning component, and the value range of a6+a7+a8=1 or a6, a7 and a8 is 0.1-10.

Preferably, a6=a8=0, the solvent has equal path to travel in the first state and the second state, and the first cleaning degree Qi and the second cleaning degree Qii in the first state may be expressed as:

Qi＝s(vi)＝∫vitidt

Qii＝s(vii)＝∫viitiidt

wherein s (vi), s (vii) are the path taken by the solvent in the first and second states, respectively, vi, vii are the speed of the solvent in the first and second states, respectively, and ti, ti are the duration of the first and second states, respectively.

Preferably, step S2 is performed prior to step S3, e (d, S (vi)). Gtoreq.e (d, S (vii)); or alternatively, the process may be performed,

step S3 is performed prior to step S2, e (d, S (vi)). Ltoreq.e (d, S (vii)).

Preferably, the cleaning process after the nth point is cleaned for the nth time satisfies the formula (1):

Qnr＝∑qnr{a1*f(d,vnr),a2*s(vnr,r,r’),a3*e(d,r,r’)}

Q1r＝Q2r＝Q3r＝…Qnr (1)

Preferably, when qnr, qnr-1, qnr-2 in steps S2, S3, S4 satisfy formula (2), the cleaning is ended:

a5*qnr-2＝qnr+a4*qnr-1 (2)

In order to realize the extraction cleaning method, the device for extracting the wafer box pollutants also comprises a controller, a power device controlled by the controller, a rotating shaft and a connecting shaft; it is characterized in that the utility model also comprises,

a gimbal for sliding the connecting shaft to control the connecting shaft to freely switch directions in a hemispherical direction;

the connecting shaft is connected with the wafer box and driven by the power device to enable the wafer box to rotate around the axis of the rotating shaft; the gimbal includes:

a vertical groove for controlling the connection shaft to slide in a vertical direction to realize a first state rotation of the wafer cassette;

a horizontal groove for controlling the connecting shaft to slide in a horizontal direction to realize a second state rotation of the wafer cassette:

an inclined groove for controlling the connecting shaft to slide in an inclined direction to realize a third state rotation of the wafer cassette:

the first state is that the wafer box rotates around the axis along the first surface horizontally and upwards, and the four surfaces comprising the first surface are cleaned;

the second state is that the first surface is vertical, the wafer box rotates around the axis, and the two remaining surfaces are cleaned;

the third state is that the first surface is inclined, and the wafer box rotates around the axis to clean a preset area;

The first state and the third state have a plurality of initial rotation positions, the third state has a plurality of intermediate rotation positions, and the first state, the second state and/or the third state enable the cleaning degree of n points on the inner surface of the wafer box to be the same;

the rotating shaft is fixedly connected with the universal device, the power device drives the rotating shaft to rotate around the axis of the rotating shaft and drives the universal device and the connecting shaft arranged in the universal device to rotate, or the universal device further comprises a direction control shaft and a direction control device which are coaxial with the rotating shaft and are fixedly connected with each other, the direction control device is rotationally connected with the connecting shaft and allows the connecting shaft to freely change directions in a hemispherical space, and the power device drives the direction control shaft to rotate and drives the connecting shaft and even the wafer box to rotate around the axis.

Preferably, the gimbal is sheet-like or semicircular.

Preferably, a connection groove is further included to connect the vertical groove, the horizontal groove, and the inclined groove.

Preferably, the vertical groove, the horizontal groove, or the inclined groove includes a positioning structure that cooperates with the connection shaft to fix a direction.

Preferably, the first face is a top face of the wafer cassette.

Preferably, the predetermined area includes at least a ridge portion, and/or constitutes a part of both sides of the ridge portion.

Preferably, the controller controls so that a relation between the degree of cleaning in the first state and the degree of cleaning in the second state is correlated with the area ratio to be cleaned; the cleaning process satisfies the formula (3):

ak＝Qi/Qii

Qi＝q{a6*f(d,vi),a6*s(vi),a8*e(d,s)}

Qii＝q{a6*f(d,vii),a7*s(vii),a8*e(d,s)} (3)

wherein a is in a value range of 0.1 to 10, k is a cleaning area ratio of the first state to the second state, qi is a cleaning amount in the first state, and Qii is a cleaning amount in the second state; the pressure f of the solvent against the inner surface of the wafer cassette is a function of the amount d of solvent and the velocity v of the solvent, the path s of the solvent is a function of the velocity v of the solvent, and the cleaning composition effective amount e is a function of the amount d of solvent and the path s; a6, a7 and a8 are weight relations among the pressure f of the solvent on the inner surface of the wafer box in the first state or the second state, the distance s of the solvent and the effective amount e of the solvent cleaning component, and the value range of a6+a7+a8=1 or a6, a7 and a8 is 0.1-10.

Preferably, a6=a8=0, the solvent travels the same distance in the first state and the second state, and the respective cleaning degrees Qi and Qii can be expressed as:

Qi＝s(vi)＝∫vitidt、

Qii＝s(vii)＝∫viitiidt；

Preferably, the first state is performed prior to the second state, e (d, s (vi)) ∈e (d, s (vii)); or alternatively, the process may be performed,

the second state is performed prior to the first state, e (d, s (vi)) +.e (d, s (vii)).

Preferably, the controller controls such that the cleaning process after the nth point is cleaned by the nth time satisfies the formula (1):

Qnr＝∑qnr{a1*f(d,vnr),a2*s(vnr,r,r’),a3*e(d,r,r’)}

Q1r＝Q2r＝Q3r＝…Qnr (1)

wherein r is the number of times of washing, r is a natural number of 2 or more, e (d, r, r ') < e (d, r-1'); qnr is the cleaning amount of the nth point of the solvent, qnr is the functional relationship among the pressure f of the nth point of the solvent, the path s of the solvent through the nth point and the effective cleaning component amount e of the nth point of the solvent, f is the function of the solvent amount d and the nth speed vnr, s is the function of the nth speed vnr and the cleaning times r, e is the function of the solvent amount d, the cleaning times r and the times redundancy r', a1, a2 and a3 are the weight relationships among the pressure f of the nth point of the solvent, the path s of the solvent through the nth point and the effective cleaning component amount e of the nth point of the solvent, a1+a2+a3=1 or a1, a2 and a3, and the range of values is 0.1 to 10;

When qnr, qnr-1, qnr-2 in the first state, the second state, and the third state satisfy formula (2), the cleaning ends:

a5*qnr-2＝qnr+a4*qnr-1 (2)

The invention provides a device for extracting pollutants in a wafer box, which replaces manual real-time accurate adjustment of a cleaning process by using a program, realizes uniform and standard extraction/cleaning of all wafer boxes, has low solvent/extraction liquid usage amount and saves cost.

Drawings

FIG. 1 is a flow chart of a method for extracting contaminants within a wafer cassette using the present invention;

FIG. 2 is a schematic view of a first state of the apparatus for contaminant extraction in a wafer cassette of the present invention;

FIG. 3 is a schematic view of a second state of the apparatus for contaminant extraction in a wafer cassette of the present invention;

FIG. 4 is a schematic view of a third state of the apparatus for contaminant extraction in a wafer cassette of the present invention;

FIG. 5 is a flow chart of a method of simulating contaminant cleaning within a wafer cassette according to the present invention;

FIG. 6a is a schematic view of a gimbal assembly of the apparatus for extracting contaminants from a wafer cassette of the present invention;

FIG. 6b is a schematic view of another gimbal diagram of an apparatus for extracting contaminants from a wafer cassette according to the present invention;

FIG. 6c is a schematic view of the right side projection of the gimbal of FIGS. 6a and 6 b;

FIG. 6d is an enlarged schematic view of the positioning structure of FIG. 6 c;

FIG. 6e is a schematic view of the positioning structure of FIG. 6d in use;

fig. 6f is a schematic perspective view of the connecting shaft portion of fig. 6d including the locating fitting.

Detailed Description

The following describes in detail the embodiments of the method for simulating cleaning of contaminants in a wafer cassette, the method for extracting contaminants in a wafer cassette and the apparatus for extracting contaminants in a wafer cassette for implementing the method according to the present invention with reference to the accompanying drawings.

In the drawings, dimensional proportions of layers and regions are not true proportions for convenience of description. It should be noted that the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex. In addition, when two components are referred to as being "connected," it is intended to include physical connection, unless the specification expressly defines otherwise, such physical connection includes, but is not limited to, electrical connection, contact connection, wireless signal connection.

As shown in fig. 5, the present invention provides a method for simulating contaminant cleaning in a wafer cassette, comprising:

step 100: determining a wafer box cleaning element, wherein the wafer box cleaning element comprises an area element, a rib element, a relation between the rib element and the area element and a solvent element of each inner surface of the wafer box; wherein the area element comprises the plane area of six surfaces inside the wafer box and the shape thereof, namely the area of the solid part of the inner surface of the wafer box and the shape thereof, including the area of the inner groove on some inner surfaces and the shape thereof; the edge elements of the square-shaped wafer box comprise the curved surface depths and the areas of 12 edges; the relationship between the edge element and the area element comprises the relationship between two long clamping surfaces of the edge and the edge, such as the relationship between the included angle of the two long clamping surfaces and the area and the edge; the solvent element includes the solvent amount, the concentration or ratio of the solvent cleaning/extraction active ingredient, and the change of the concentration or ratio of the solvent cleaning/extraction active ingredient in the cleaning process. The cleaning element also comprises the volume of the wafer box, and the main purpose of the simulation is to replace static infiltration by cleaning in the moving process, wherein the solvent quantity and the volume of the wafer box have a certain proportion relation in the moving cleaning process.

Step 200: inputting the cleaning elements to simulate the cleaning process so that the cleaning degrees Qnr of n points on the inner surface of the wafer box are the same; the cleaning process comprises the solvent amount, the distance of the solvent passing through n points on the inner surface of the wafer box, the pressure of the solvent on the n points on the inner surface of the wafer box, the effective amount of the solvent cleaning component in the process, the cleaning times and the relation formed between any two of the solvent cleaning component and the cleaning times; the method comprises the following steps that the cleaning process of the nth point after the nth cleaning meets the formula (1):

Qnr＝∑qnr{a1*f(d,vnr),a2*s(vnr,r,r’),a3*e(d,r,r’)}

Q1r＝Q2r＝Q3r＝…Qnr (1)

wherein r is the number of times of washing, r is a natural number of 2 or more, e (d, r, r ') < e (d, r-1'). qnr is the amount of solvent at the nth point of cleaning, qnr is the functional relationship of the pressure f at the nth point of solvent at the nth point of cleaning, the path s of solvent through the nth point of cleaning, and the effective amount e of cleaning components at the nth point of solvent at the nth point of cleaning, f is the function of the amount d of solvent and the speed vnr at the nth time (also the number of times redundancy r 'is considered, not shown in the formula), s is the function of the speed vnr at the nth time (also the number of times redundancy r' is considered, not shown in the formula), the number of times of cleaning r, and the number of times redundancy r ', e is the function of the amount d of solvent, the number of times of cleaning r, and the number of times redundancy r'; the redundancy r 'may be in the order of magnitude lower than the number r of washes, with a single wash r counting 1, and the redundancy r' being a positive number less than 1, such as 0.1; the redundancy r 'may also be of a magnitude order higher than the number r of washes, a single wash 1, with the redundancy r' being a positive 10 or 10.1 number greater than 1; the redundancy is important for adjusting the additional cleaning process due to the loss of the solvent active ingredient during the active cleaning process, if the solvent active ingredient is not lost during the cleaning process but only the concentration of the pollutant in the solvent is increased and the cleaning effect is not affected, r 'is 0, if the cleaning effect is affected, r' is not 0. a1, a2 and a3 are respectively weight relations among the pressure f of the solvent for cleaning the nth point, the path s of the solvent passing through the nth point and the effective amount e of cleaning components of the solvent for cleaning the nth point, wherein the value range of a1+a2+a3=1 or a1, a2 and a3 is 0.1-10, the relation among a1, a2 and a3 or the value range is used for adjusting f (d, vnr), s (vnr, r r '), and the overall contribution of e (d, r and r') to qnr or Qnr, such as a1=0 in the process of active cleaning adopting uniform pressure; if the solvent with a certain speed is the same (i.e. the speed of the solvent passing through each point is the same, the time is the same), a2=0; a3=0 when the concentration of the cleaning active ingredient (i.e., the active ingredient ratio) in the solvent (or extract) in the wafer cassette is controlled and stabilized in real time. Preferably, the cleaning times r (also consider the times of redundancy r', not shown in the formula) at least include the cycle times of solvent cleaning, so that the whole most part adopts a standard uniform cycle active cleaning process, and the non-cycle process is matched with the part which does not reach the same cleaning degree in the complementary cleaning cycle cleaning process, so that the cleaning degrees Qnr of n points on the inner surface of the wafer box are the same. In some cases, such as where the wafer cassette top surface contaminant level is less sensitive, the number of cleanings r (also taking into account the number of redundancy r', not shown in the formula) is the number of cycles, i.e., the four surfaces adjacent to the top surface are cleaned thoroughly with a particular cyclic activity (e.g., rotating about the top surface center axis), and the opposite top surface is cleaned thoroughly with a particular cyclic activity (e.g., shaking only marginally over the solvent or extract on the bottom surface).

The total cleaning amount, namely the cleaning degree, in the cleaning process of the wafer box is obtained by accumulating the cleaning amount each time; note that qnr further includes one of the roughness, flatness, or friction coefficient of the n-th point of the inner surface of the wafer used in combination with f (d, vnr), that is, the cleaning element further includes the roughness, flatness, or friction coefficient of the inner surface of the wafer, and in the high precision industrial system, the roughness, flatness, or friction coefficient of all points of the inner surface of the default wafer box is the same, and f (d, vnr) is in a linear relationship with the roughness, flatness, or friction coefficient, so that the roughness, flatness, or friction coefficient of all points of the inner surface of the wafer box is negligible. But in the case of improving the cleaning accuracy to ppt level or more, the roughness, flatness or friction coefficient of the n-th point of the inner surface of the wafer should be considered. The number of times of redundancy r 'is also considered by adjusting the cycle number r of vnr, not shown in the formula), the direction and the size further influence f (d, vnr) and s (vnr, r r'), the cleaning degree of n points on the inner surface of the wafer box can be the same, the cleaning process can be accurately adjusted in real time, and the uniform and standard cleaning of all the wafer boxes can be realized.

Step 300: the conditions are satisfied and the simulation is stopped. The conditions include at least a reduction in the increment of the cleaning volume.

The conditions include that qnr, qnr-1, qnr-2 satisfy formula (2):

a5*qnr-2＝qnr+a4*qnr-1 (2)

wherein qnr is the cleaning amount of the solvent for the nth cleaning point, qnr-1 is the cleaning amount of the solvent for the nth cleaning point, qnr-2 is the cleaning amount of the solvent for the nth cleaning point; the value range of a5 is 0.01 to 0.2, and the value range of a4 is 0.1 to 0.3; alternatively, a4 and a5 are positive numbers less than 1, satisfying a5=1/2×a4 ² Namely, the size relation between the cleaning amount qnr and the cleaning amounts qnr-1, qnr-2 of the previous two times is increased unevenly in sequence, whereas the size relation between the cleaning amounts qnr-2, qnr-1, qnr is decreased rapidly in sequence, and the difference between the cleaning amounts qnr-2, qnr-1 is at least 2 times. The cleaning process including the optimum solvent amount d, the minimum number of cleaning times r, and/or the cleaning path having the shortest actual length is simulated by the formula (2) under this condition. Note that qnr-2, qnr-1, qnr may be the amount of cleaning of the continuous cleaning in the first state hereinafter, or qnr-2, qnr-1, qnr may be the amount of cleaning of the continuous cleaning in the first state hereinafter, or qnr-2, qnr-1, qnr may be the amount of cleaning of the continuous cleaning in the third state hereinafter; some elements in various states are the same, such as the surface area, the path of the solvent and the like, and at least one of qnr-2, qnr-1 and qnr is the cleaning amount of continuous cleaning in different states, i.e. three states are performed in a crossing manner, but the simulation is finished by using the formula (2), and will not be repeated hereinafter.

The above is a cleaning process based on n points in the wafer box, as shown in fig. 2 to 4, and the applicant introduces a cleaning process based on the inner surface of the wafer box based on the cleaning process of n points in the wafer box, that is, the cleaning process characterized by mainly cleaning each surface and a combination of the surfaces in the wafer box, and taking a tetragonal wafer box as an example, the cleaning process further includes a first state of cleaning four surfaces of the wafer box and a second state of cleaning the remaining two surfaces of the wafer box.

As shown in fig. 2, the first state is that the wafer cassette 1200 rotates vertically (i.e., the top surface of the wafer cassette 1200 is the first surface and is disposed horizontally) around an axis (the axis related to the apparatus in the whole refers to the axis of the rotating shaft 1310) to clean the four surfaces (i.e., four surfaces including the first surface, the opposite surface of the first surface, i.e., the bottom surface, and the other two surfaces through which the solvent/extraction liquid passes), and as shown in fig. 3, the second state is that the wafer cassette rotates horizontally (i.e., the top surface of the wafer cassette 1200 is the first surface and is disposed vertically) to clean the two surfaces (i.e., the two surfaces other than the four surfaces); the cleaning process satisfies the formula (3):

ak＝Qi/Qii

Qi＝q{a6*f(d,vi),a6*s(vi),a8*e(d,s)}

Qii＝q{a6*f(d,vii),a7*s(vii),a8*e(d,s)} (3)

wherein, the value range of a is 0.1-10, k is the ratio of the total area of four surfaces cleaned in the first state to the total area of two surfaces cleaned in the second state, qi is the cleaning degree in the first state, and Qii is the cleaning degree in the second state; the pressure f of the solvent against the inner surface of the wafer cassette is a function of the amount d of solvent and the velocity v of the solvent, the path s of the solvent is a function of the velocity v of the solvent, and the cleaning composition effective amount e is a function of the amount d of solvent and the path s; a6, a7 and a8 are weight relations among the pressure f of the solvent on the inner surface of the wafer box in the first state or the second state, the distance s of the solvent and the effective amount e of the solvent cleaning component, and the value range of a6+a7+a8=1 or a6, a7 and a8 is 0.1-10.

It should be noted that, without changing the solvent/extraction liquid, when the solvent is changed from the first state to the second state due to the initiation of the first state process, the solvent inevitably partially cleans at least one of the four sides of the first state, and therefore the degree of cleaning of the first state should include the cleaning of the last side where the solvent stays and is thereby diverted.

It should be further noted that, in both the first state and the second state, the parts of the surfaces and even the whole surfaces that are cleaned by each other are mutually cleaned, and the mutual cleaning is adjustable by s (vi), e (d, s) because the mutual cleaning is not the main cleaning in the respective states; the details are described below. In the first state, the solvent is inevitably cleaned at the initial, during (due to too high speed or the like) or end stage of the process, and likewise, the second state (by independently cleaning the two surfaces to be cleaned in a small range around the axis, such as shaking or swinging at an angle of 90 degrees or less) is inevitably cleaned at the initial, during (due to too high speed or transition between the two surfaces or the like) and end stage of the process, and the whole or part of the four surfaces to be cleaned in the first state, which are adjacent to the two surfaces to be cleaned in the second state, is inevitably cleaned. In case of discussion, if the first state is executed before the second state, e (d, s (vi)). Gtoreq.e (d, s (vii)), so that s (vii). Gtoreq.s (vi) is adopted, that is, the second state has more cleaning time or path, so that the overall cleaning degree of the first state and the second state is the same for each cleaned surface; if a 360 degree rotation about the axis is taken in the second state, two faces in the first state will be completely cleaned, and thus cleaning to lower the two faces can be taken in the first state beforehand, e.g. the other two faces in the first state are taken to shake or rock, respectively, about the axis in a small range, e.g. a shake or rock angle of less than 90 degrees. E (d, s (vi)). Ltoreq.e (d, s (vii)) and thus s (vii). Ltoreq.s (vi), if said second state is performed prior to said first state, i.e. the first state is intended to have a greater washing time or path, so that the first and second states have the same overall degree of washing for each washed face; taking a 360 degree rotation about the axis in the second state will completely clean two of the first state, and thus subsequently taking a clean to lower the two of the first state, e.g., taking a small range of jolt or sway about the axis, e.g., 90 degrees or less, for the other two of the first state, but because of the cleaning of the two of the second state and e (d, s (vi)) +.e (d, s (vii)), there is a much smaller s (vi) pre2side of the two of the other two of the faces for the cleaning of the other two of the faces than s (vi) post2side of the other two of the faces, which is not repeated herein. Wherein the first and second conditions are adapted to clean substantially all of the ribs and to achieve the same degree of cleaning of all of the ribs and all six surfaces, taking the appropriate amounts f (d, vi), s (vi), e (d, s) and especially the amount d of solvent.

In other embodiments, as shown in FIG. 4, the cleaning process further includes a third state of cleaning the predetermined area including the ribs based on the formula (3) because no appropriate (d, vi), s (vi), e (d, s) and especially the solvent amount d are taken, and the first state and the second state are each performed prior to the third state in practice, because all ribs are cleaned in the first state and the second state, i.e., e (d, s (viii)) +.e (d, s (vi)) and e (d, s (viii)) +.e (d, s (vii)), even though the duration or course of the third state is smaller than the duration and course of the second state or the first state, i.e., s (viii) +.s (vi) and s (viii)) +.s (vii).

It should be noted that, as shown in fig. 3, in the second state, only one initial rotation position exists in the wafer cassette, and the intermediate rotation position and the end rotation position are the same as the initial rotation position; as shown in fig. 2 and 4, in the first state and the third state, there are a plurality of initial rotational positions, and there are a plurality of intermediate rotational positions and end rotational positions, respectively; therefore, the initial, middle and end rotation positions of the first state and the second state can be accurately controlled in real time through the formula (1) or the formula (3), so that the cleaning degree of each point on the inner surface of the wafer box is the same. The simulation results in a cleaning process comprising a minimum quantity d of solvent and a cleaning path of shortest actual length, which is selected from the initial rotational position, the all intermediate rotational positions and the all end rotational positions in the respective states, respectively, simulated and combined by passages between the respective positions. It should be noted that, the cleaning path means that the first state and the second state may be executed multiple times, and may be in a cross sequence, for example, after the first state, the second state, the first state, and the second state … are executed sequentially, the relationship of the above formulas should be changed correspondingly or sequentially according to the cross sequence, so as to achieve that the cleaning degree of each point in the wafer box is the same. Similarly, the first state, the second state and the third state may be performed multiple times, and may be sequentially performed in a cross order, for example, the first state, the second state, the third state, the second state, the first state, the third state, the second state …, and the relationships of the above formulas should be correspondingly or sequentially changed in a cross order, so as to achieve that the cleaning degrees of the points in the wafer cassette are the same.

In this embodiment, in the first state, the second state, or the third state, a point on the wafer cassette body is taken as a driving point of rotation, that is, the rotation shaft 1310 or a point directly connected to the wafer cassette body by the connection shaft 1313, in this case, a somewhat simulated cleaning path is complicated and the speed variation easily damages the wafer cassette housing, so that in another embodiment, the wafer cassette 1200 rotates in the container (not shown); alternatively, the pod 1200 is connected and rotated by its own components.

The method for simulating cleaning of pollutants in the wafer box has the beneficial effects that: the method for extracting/cleaning the pollutants in the wafer box comprises the cleaning process with the least solvent amount, the least time or the shortest cleaning process, the solvent/extraction liquid usage amount is low, the cost is saved, the cleaning process can be accurately regulated in real time, and the uniform and standard cleaning of the pollutants in all the wafer boxes can be realized.

Also provided is a method for extracting contaminants in a wafer cassette based on the simulation, as shown in fig. 1 to 4 and fig. 6a to 6f, comprising:

step S1: adding a solvent into the wafer box 1200, wherein the optimal solvent amount dex obtained by the simulation is still denoted as d for simplicity, the volume of the solvent amount d is not more than 50% of the volume of the wafer box 1200, the solvent can completely submerge the maximum surface of the wafer box 1200, and the volume of the solvent amount d is 5-20% of the volume of the wafer box 1200;

Step S2: as shown in fig. 2, adjusted to the first state, the pod 1200 is oriented with a first side horizontal and up, preferably the first side is the top side of the pod 1200, the pod 1200 rotates about an axis, and the four sides including the first side are cleaned;

step S3: as shown in fig. 3, to a second state, the first face is set upright, the pod 1200 is rotated about the axis, and the remaining two faces are cleaned:

as shown in fig. 4, further comprising step S4: adjusting to a third state, inclining the first surface, and rotating the wafer box around the axis to clean a preset area;

step S5 may be further included: taking out the solvent, and analyzing and calculating the pollutant content level;

the cleaning process comprises any one of the steps S2, S3 and S4 which are executed once, and the execution sequence of the steps S2, S3 and S4 is any one of the arrangement combination, or the cleaning process comprises any one of the arrangement combination of the steps S2, S3 and S4 which are executed many times. It should be noted that, as shown in fig. 3, in the second state, only one initial rotation position exists in the wafer cassette, and the intermediate rotation position and the end rotation position are the same as the initial rotation position; as shown in fig. 2 and 4, in the first state and the third state, there are a plurality of initial rotational positions, and there are a plurality of intermediate rotational positions and end rotational positions, respectively; thus, the different initial, intermediate, and final rotational positions of the first and second states can be precisely controlled in real time by the formula (1) or the formula (3) to perform simulation to obtain a cleaning process including a minimum solvent amount d and a cleaning process of a cleaning path having a shortest actual length, which is selected from the initial rotational positions, all intermediate rotational positions, and all final rotational positions in the respective states, respectively, and combined by passages between the respective positions, so that the cleaning degree of the respective points on the inner surface of the wafer cassette is the same.

Wherein, the cleaning process after the nth point on the inner surface of the wafer cassette 1200 is cleaned for the nth time makes the first state and the second state satisfy the formula (1):

Qnr＝∑qnr{a1*f(d,vnr),a2*s(vnr,r,r’),a3*e(d,r,r’)}

Q1r＝Q2r＝Q3r＝…Qnr (1)

wherein r is the number of times of washing, r is a natural number of 2 or more, e (d, r, r')<e (d, r-1'). qnr is the amount of solvent at the nth point of cleaning, qnr is the functional relationship of the pressure f at the nth point of solvent at the nth point of cleaning, the path s of solvent through the nth point of cleaning, and the effective amount e of cleaning components at the nth point of solvent at the nth point of cleaning, f is the function of the amount d of solvent and the speed vnr at the nth time (also the number of times redundancy r 'is considered, not shown in the formula), s is the function of the speed vnr at the nth time (also the number of times redundancy r' is considered, not shown in the formula), the number of times of cleaning r, and the number of times redundancy r ', e is the function of the amount d of solvent, the number of times of cleaning r, and the number of times redundancy r'; the redundancyThe margin r 'may be an order of magnitude lower than the number r of washes, with a single wash r counting 1, and the redundancy r' being a positive number less than 1, such as 0.1; the redundancy r 'may also be of a magnitude order higher than the number r of washes, a single wash 1, with the redundancy r' being a positive 10 or 10.1 number greater than 1; the redundancy is important for adjusting the additional cleaning process due to the loss of the solvent active ingredient during the active cleaning process, if the solvent active ingredient is not lost during the cleaning process but only the concentration of the pollutant in the solvent is increased and the cleaning effect is not affected, r 'is 0, if the cleaning effect is affected, r' is not 0. a1, a2 and a3 are respectively weight relations among the pressure f of the solvent for cleaning the nth point, the path s of the solvent passing through the nth point and the effective amount e of cleaning components of the solvent for cleaning the nth point, wherein the value range of a1+a2+a3=1 or a1, a2 and a3 is 0.1-10, the relation among a1, a2 and a3 or the value range is used for adjusting f (d, vnr), s (vnr, r r '), and the overall contribution of e (d, r and r') to qnr or Qnr, such as a1=0 in the process of active cleaning adopting uniform pressure; if the solvent with a certain speed is the same (i.e. the speed of the solvent passing through each point is the same, the time is the same), a2=0; a3=0 when the concentration of the cleaning active ingredient (i.e., the active ingredient ratio) in the solvent (or extract) in the wafer cassette is controlled and stabilized in real time. Preferably, the cleaning times r (also consider the times of redundancy r', not shown in the formula) at least include the cycle times of solvent cleaning, so that the whole most part adopts a standard uniform cycle active cleaning process, and the non-cycle process is matched with the part which does not reach the same cleaning degree in the complementary cleaning cycle cleaning process, so that the cleaning degrees Qnr of n points on the inner surface of the wafer box are the same. In some cases, such as where the wafer cassette top surface contaminant level is less sensitive, the number of cleanings r (also taking into account the number of redundancy r', not shown in the formula) is the number of cycles, i.e., the four surfaces adjacent to the top surface are cleaned thoroughly with a particular cyclic activity (e.g., rotating about the top surface center axis), and the opposite top surface is cleaned thoroughly with a particular cyclic activity (e.g., shaking only marginally over the solvent or extract on the bottom surface). As described in the context of the simulation process, If the formula (3) fails to be followed, the appropriate amounts of f (d, vi), s (vi), e (d, s) and especially the amount of solvent d or the cleaning process without the third state (i.e. without the amount of solvent d in the third state) _not3rdstatus And a cleaning path s _not3rdstatus ) Then, the first state, the second state, and the third state of the n-th point on the inner surface of the wafer cassette 1200 after the nth cleaning process is performed for the nth cleaning process satisfy the formula (1) and the formula (2), which are not described in detail.

According to the simulation, when qnr, qnr-1, qnr-2 of n points on the inner surface of the wafer cassette 1200 satisfy formula (2), the cleaning is ended:

a5*qnr-2＝qnr+a4*qnr-1 (2)

wherein qnr is the cleaning amount of the solvent for the nth cleaning point, qnr-1 is the cleaning amount of the solvent for the nth cleaning point, qnr-2 is the cleaning amount of the solvent for the nth cleaning point; the value range of a5 is 0.01 to 0.2, and the value range of a4 is 0.1 to 0.3; alternatively, a4 and a5 are positive numbers less than 1, satisfying a5=1/2×a4 ² That is, the magnitude relation between the cleaning amount qnr and the cleaning amounts qnr-1, qnr-2 of the previous two times is sequentially and unevenly increased, whereas the magnitude relation between the cleaning amounts qnr-2, qnr-1, qnr is sequentially and rapidly decreased, and the cleaning amounts qnr-2, qnr-1 are at least different by more than 2 times, wherein the simulated cleaning process including the optimal solvent amount d (or dex), the minimum cleaning times r and/or the shortest actual length of the cleaning path satisfies the formulas (1) and (2).

In embodiments requiring a third state of the cleaning process, as shown in fig. 4, the predetermined area includes at least ribs such as L1 and L2, and/or a portion of the rib forming surface.

In this embodiment, as shown in fig. 2, in step S1, the wafer cassette 1200 is filled with a solvent in the wafer cassette with the first surface, i.e., the top surface, facing horizontally upwards, and the solvent is immersed in at least the bottom surface opposite to the first surface, or immersed in at least the edge portion of the bottom surface opposite to the first surface.

As shown in fig. 2 and 3, the duration of the first state and the second state is related to the area ratio of the cleaning. The first state is that the wafer box vertically rotates to clean the four surfaces, and the second state is that the wafer box horizontally rotates to clean the two surfaces; the cleaning process satisfies the formula (3):

ak＝Qi/Qii

Qi＝q{a6*f(d,vi),a6*s(vi),a8*e(d,s)}

Qii＝q{a6*f(d,vii),a7*s(vii),a8*e(d,s)} (3)

wherein, the value range of a is 0.1-10, k is the ratio of the total area of four surfaces cleaned in the first state to the total area of two surfaces cleaned in the second state, qi is the cleaning degree in the first state, and Qii is the cleaning degree in the second state; the pressure f across the solvent is a function of the amount d of solvent and the velocity v of the solvent, the path s of the solvent is a function of the velocity v of the solvent, and the cleaning composition effective amount e is a function of the amount d of solvent and the path s; a6, a7 and a8 are weight relations among the pressure f of the solvent opposite to the first state or the second state, the path s of the solvent and the effective amount e of the solvent cleaning component, and the value range of a6+a7+a8=1 or a6, a7 and a8 is 0.1-10.

It should be further noted that, in both the first state and the second state, the parts of the surfaces and even the whole surfaces that are cleaned by each other are mutually cleaned, and the mutual cleaning is adjustable by s (vi), e (d, s) because the mutual cleaning is not the main cleaning in the respective states; the details are described below. In the first state, the solvent is inevitably cleaned at the initial, in-process (due to too high speed or the like) or end stage of the process, and likewise, the solvent is inevitably cleaned at the initial, in-process (due to too high speed or the like) or end stage of the process (due to the fact that the solvent is not used for cleaning the whole or part of the four surfaces cleaned by the first state adjacent to the four surfaces cleaned by the second state) in the second state (due to the fact that the two surfaces are independently cleaned and respectively shake or shake around the axis in a small range, such as shake or shake angle is less than 90 degrees). In case of discussion, if the first state is executed before the second state, that is, step S2 is executed before step S3, e (d, S (vi)) ≡e (d, S (vii)) is present, so that S (vii) ≡s (vi)) is adopted, that is, the second state aims at cleaning time or more, so that the overall cleaning degree of the first state and the second state is the same for each cleaned surface; if a 360 degree rotation about the axis is taken in the second state, two faces in the first state will be completely cleaned, and thus cleaning to lower the two faces can be taken in the first state beforehand, e.g. the other two faces in the first state are taken to shake or rock, respectively, about the axis in a small range, e.g. a shake or rock angle of less than 90 degrees. If said second state is performed prior to said first state, i.e. S3 is performed prior to step S2, e (d, S (vi)). Ltoreq.e (d, S (vii)), thus taking S (vii). Ltoreq.s (vi), i.e. the first state has a greater number of washing times or passes, so that the first and second states have the same overall degree of washing for each washed surface; taking a 360 degree rotation about the axis in the second state will completely clean two of the first state, and thus subsequently taking a clean to lower the two of the first state, e.g., taking a small range of jolt or sway about the axis, e.g., 90 degrees or less, for the other two of the first state, but because of the cleaning of the two of the second state and e (d, s (vi)) +.e (d, s (vii)), there is a much smaller s (vi) pre2side of the two of the other two of the faces for the cleaning of the other two of the faces than s (vi) post2side of the other two of the faces, which is not repeated herein. Wherein the first and second conditions are adapted to clean substantially all of the ribs and to achieve the same degree of cleaning of all of the ribs and all six surfaces, taking the appropriate amounts f (d, vi), s (vi), e (d, s) and especially the amount d of solvent.

In other embodiments, as shown in FIG. 4, equation (3) further includes a third state of cleaning the predetermined area including the ribs due to the lack of adoption of the proper (d, vi), s (vi), e (d, s), and especially the solvent amount d, and the first state and the second state are each performed prior to the third state in practice, since all ribs are cleaned in the first state and the second state, i.e., e (d, s (viii)). Ltoreq.e (d, s (vi)) and e (d, s (viii)). Ltoreq.e (d, s (vii)), even though the duration or course of the third state is smaller than the duration and course of the second state or the first state, i.e., s (viii). Ltoreq.s (vi) and s (viii)). Ltoreq.s (vii).

It should be noted that, as shown in fig. 3, in the second state, only one initial rotation position exists in the wafer cassette, and the intermediate rotation position and the end rotation position are the same as the initial rotation position; as shown in fig. 2 and 4, in the first state and the third state, there are a plurality of initial rotational positions, and there are a plurality of intermediate rotational positions and end rotational positions, respectively; therefore, the initial, middle and end rotation positions of the first state and the second state can be accurately controlled in real time through a program or a formula (1) or a formula (3), so that the cleaning degree of each point on the inner surface of the wafer box is the same. Wherein the simulated cleaning process including the minimum solvent amount d and the shortest actual length of the cleaning path, which is selected from the initial rotational position, the all intermediate rotational positions, and the all end rotational positions in the respective states and is composed of passages between the respective positions, is simulated to satisfy the formulas (1) and (2) to perform cleaning. It should be noted that, the cleaning path means that the first state and the second state may be executed multiple times, and may be in a cross sequence, for example, after the first state, the second state, the first state, and the second state … are executed sequentially, the relationship of the above formulas should be changed correspondingly or sequentially according to the cross sequence, so as to achieve that the cleaning degree of each point in the wafer box is the same. Similarly, the first state, the second state and the third state may be performed multiple times, and may be sequentially performed in a cross order, for example, the first state, the second state, the third state, the second state, the first state, the third state, the second state …, and the relationships of the above formulas should be correspondingly or sequentially changed in a cross order, so as to achieve that the cleaning degrees of the points in the wafer cassette are the same.

When the cleaning/extracting of the active ingredient in the solvent only promotes the dissolution of the contaminant, that is, only the concentration of the dissolved contaminant increases, but the active ingredient of the solvent does not decrease, then a6=a8=0, and the paths of the solvent in the first state and the second state are equal, so that the cleaning degree of n points on the inner surface of the wafer cassette is the same, and the cleaning degree of the first state Qi and the cleaning degree of the second state Qii are the same, which can be expressed as:

Qi＝s(vi)＝∫vitidt、

Qii＝s(vii)＝∫viitiidt；

The invention provides a method for extracting pollutants in a wafer box, which has the advantages of low solvent/extract consumption, cost saving, realization of accurate adjustment of the cleaning process in real time and realization of uniform and standard cleaning of all wafer boxes.

To implement the above extraction cleaning method, the applicant also provides an apparatus for extracting contaminants from a wafer cassette, as shown in fig. 2 to 4 and 6a to 6f, comprising a controller (not shown), a power unit 1000 controlled by the controller, a rotation shaft 1310 connected to the power unit 1000, and a connection shaft 1313; it is characterized in that the utility model also comprises,

A gimbal 1320 for sliding the connection shaft 1313 inside to control the connection shaft 1313 to freely switch directions in a hemispherical direction;

the connection shaft 1313 connects the wafer cassette 1200 and rotation of the rotation shaft 1310, either synchronous or asynchronous, rotates the gimbals 1320 and rotates the wafer cassette 1200 about the axis of the rotation shaft 1310. The gimbal 1320 includes: a vertical slot 1321 to control the connection shaft 1313 to slide in a vertical direction to achieve the first state rotation of the wafer cassette 1200; a horizontal slot 1323 to control the connection shaft 1313 to slide in a horizontal direction to achieve the second state rotation of the wafer cassette 1200; the inclined slots 1322 are configured to control the connection shaft 1313 to slide in the inclined direction to realize the rotation of the wafer cassette 1200 in the third state, wherein the number of vertical slots 1321 is 1, the horizontal slots 1323 are single holes at the center, the inclined slots 1322 are 2-10, the inclined slots 1322 are uniformly distributed to uniformly adjust the inclined angle of the connection shaft 1313 when sliding in the adjacent inclined slots 1322, for example, 4 inclined slots 1322, and the angles θ of the axes of the connection shaft 1313 and the rotation shaft 1310, which are sequentially drawn into the inclined slots 1322 from the periphery to the center of the vertical slots 1321, are respectively 90 degrees, 72 degrees, 54 degrees, 36 degrees, 18 degrees, and the number of inclined slots 1322 can be set in a manner of equally dividing the diagonal acute angles of the wafer cassette 1200 by 90 degrees, which is not described in detail herein.

As shown in fig. 2, in the first state, the wafer cassette 1200 is horizontally and upwardly arranged with a first surface, i.e., a top surface, and the wafer cassette 1200 is rotated about an axis of the rotation shaft 1310, and four surfaces including the first surface are cleaned;

as shown in fig. 3, in the second state, the first surface is vertical, the wafer cassette 1200 rotates around the axis of the rotation shaft 1310, and the remaining two surfaces are cleaned;

as shown in fig. 4, the third state is to tilt the first surface, and the wafer cassette 1200 is rotated around the axis of the rotation shaft 1310 to clean a predetermined area;

as shown in fig. 6a and 6c, the first state wafer cassette 1200 has a plurality of initial rotational positions (i.e., positions of the connection shafts 1313) in the vertical slots 1321, and the initial rotational positions may be intermediate rotational positions and end rotational positions during the first state, i.e., the first state has a plurality of intermediate rotational positions and end rotational positions. The third state wafer cassette 1200 has a plurality of initial rotational positions (e.g., positions of the positioning structures 1325 that match the shape of the connecting shaft 1313) in the plurality of inclined slots 1322, and the initial rotational positions may be intermediate rotational positions and end rotational positions during the third state, i.e., the third state has a plurality of intermediate rotational positions and end rotational positions. The second state pod 1200 has only one initial rotational position (i.e., the position of the connecting shaft 1313) within the horizontal slot 1323 and, similarly, there may be one intermediate rotational position 1323 and an end rotational position during the second state. Therefore, the different initial, middle and end rotation positions of the first state and the second state can be accurately controlled in real time through the formula (1) or the formula (3), so that the cleaning degree of n points on the inner surface of the wafer box is the same. As a cleaning process, a cleaning path including a minimum solvent amount d and a shortest actual length is used, which is formed by selecting at least one of the initial rotational position, the all intermediate rotational positions, and the all end rotational positions in the respective states, respectively, and combining passages between the respective positions. It should be noted that, the cleaning path means that the first state and the second state may be executed multiple times, and may be in a cross sequence, for example, after the first state, the second state, the first state, and the second state … are executed sequentially, the relationship of the above formulas should be changed correspondingly or sequentially according to the cross sequence, so as to achieve that the cleaning degree of each point in the wafer box is the same. Similarly, the first state, the second state and the third state may be performed multiple times, and may be sequentially performed in a cross order, for example, the first state, the second state, the third state, the second state, the first state, the third state, the second state …, and the relationships of the above formulas should be correspondingly or sequentially changed in a cross order, so as to achieve that the cleaning degrees of n points in the wafer cassette are the same.

As shown in fig. 6b and 6c, the gimbals 1320 are semicircular or sheet-shaped. The gimbal 1320 further includes a plurality of connecting slots 1324 to connect the vertical slots 1321, the horizontal slots 1323, and the diagonal slots 1322.

As shown in fig. 6c, the vertical slot 1321, the horizontal slot 1323 or the inclined slot 1322 includes a positioning structure 1325 that cooperates with the connection shaft 1313 to fix a direction.

As shown in fig. 6d to 6f, the positioning structure 1325 with a circular opening includes a positioning member 13251 located at the bottom of the positioning structure 1325, a positioning fitting 13131 is disposed on a portion of the connecting shaft 1313 corresponding to the positioning member 13251, preferably, the positioning member 13251 is a laterally elastic snap spring structure, and the positioning fitting 13131 is a groove structure which is matched with the snap spring structure and has a structure with a portion smaller than the lateral diameter of the snap spring structure in the released state, so that the snap spring structure can be pressed into the groove structure to realize positioning when the connecting shaft 1313 is connected with the wafer box 1200 to perform circular motion around the axis of the rotating shaft 1310 or to have a certain speed and centrifugal force is provided by the positioning structure 1325; in adjusting the initial, intermediate, and final rotational positions of the connecting shaft 1313 in the first, second, and third states in accordance with the above, the lowering of the speed may be accomplished by the weight of the wafer cassette 1200 driving the connecting shaft 1313 in the opposite direction along x to compress and disengage the snap spring structure laterally from the slot structure to re-enter the vertical 1321, horizontal 1323, or sloped 1322 slots and move in the forward or reverse direction along y while continuing the cleaning path in the extraction method described above, which applicant will not be further described herein.

In one embodiment, the connecting shaft 1313 connects the other end of the cassette 1200 to the center position of the gimbal 1320, and adjusts the initial, intermediate, and final rotational positions of the cassette 1200 in the first, second, and third states described above solely by the speed at which the rotating shaft 1310 drives the cassette 1200, the centrifugal force provided to the cassette by the gimbal 1320, and the weight of the cassette 1200 and the connecting shaft 1313 itself, to perform the cleaning path in the extraction method described above.

In another embodiment, as shown in fig. 6a and 6b, the rotating part 1300 includes a steering shaft 1311 and a steering device 1312, the rotating shaft 1310 is a hollow structure to accommodate the steering shaft 1311 and the steering device 1312 and is coaxial with each other, the steering shaft 1311 is fixedly connected with the steering device 1312, the steering device 1312 is rotatably connected with the connecting shaft 1313, and the connecting shaft 1313 can be allowed to freely change directions along a groove on the universal device 1320 in a hemispherical space. The power device 1000 provides a pulling force, pushing force or rotating force as shown in the drawing to the steering shaft 1311, when the power device 1000 provides a pulling force to the left, the steering shaft 1311 drives the connecting shaft 1313 to slide from the vertical slot 1321 to the inclined slot 1322 until the horizontal slot 1323; the position in the gimbal 1320 when the power plant 1000 provides thrust steering shaft 1311 to the right will drive connecting shaft 1313 to roll outwards the slots 1322, 1321 when it is launched by the thrust until steering device 1323 reaches the center position of gimbal 1320 i.e. connecting shaft returns to vertical slot 1321; at this time, the power unit 1000 may provide a rotational force to the control shaft 1311 to rotate the connection shaft 1313 in the vertical groove 1321, and since the wafer cassette 1200 and the connection shaft 1313 have a weight, the provided rotational force should be an auxiliary rotational force, and the above-mentioned cleaning path should be performed by using the weight and the speed of the rotation shaft 1310 provided to the connection shaft 1313 and thus the wafer cassette 1200 through the universal joint 1320 as much as possible. It should be noted that, when the connecting shaft 1313 slides out of the positioning structure 1325, the control shaft 1311 may provide a part of the rotational force to supplement or assist the provided rotational force of the rotating shaft 1310, so as to avoid that the connecting shaft 1313 fails to perform the cleaning of the relevant position in the cleaning path at a relatively high speed, which is not described herein in detail.

In particular, the rotation shaft 1310 may be used only as a fixing member for fixing the universal joint 1320 and as a housing for accommodating the direction control shaft 1311 and the direction controller 1312, and not provide the rotation force and the rotation force to the connection shaft 1313 and the wafer cassette 1200 through the universal joint 1320 to perform the above cleaning path, and the controller (not shown) may only control the direction control shaft 1311 to provide the rotation force and the rotation force to the connection shaft 1313 to perform the above cleaning path; the rotation shaft 1310 and the universal joint 1320 may or may not be rotated about the axis by the connection shaft 1313.

As shown in fig. 2 and 3, the duration of the first state and the second state is related to the area ratio of the cleaning. The first state is that the wafer box vertically rotates to clean the four surfaces, and the second state is that the wafer box horizontally rotates to clean the two surfaces; the controller uses a cleaning process satisfying the formula (3), that is, the controller uses a program including the formula (3) to relate a relationship between the degree of cleaning in the first state and the degree of cleaning in the second state to the area ratio to be cleaned:

ak＝Qi/Qii

Qi＝q{a6*f(d,vi),a6*s(vi),a8*e(d,s)}

Qii＝q{a6*f(d,vii),a7*s(vii),a8*e(d,s)} (3)

In other embodiments, as shown in FIG. 4, the controller uses the program based on equation (3) since the proper (d, vi), s (vi), e (d, s) and especially the solvent amount d are not taken, the controller controls the cleaning process further including a third state of cleaning the predetermined area including the rib, and the first state and the second state are each performed prior to the third state in practice, since all the ribs are cleaned in the first state and the second state, i.e., e (d, s (viii)) +.e (d, s (vi)) and e (d, s (viii)) +.e (d, s (vii)), even though the duration of the third state is either less than the duration and the path of the second state or the first state, i.e., s (viii) +.s (vi) and s (viii)) +.s (vii).

Qi＝s(vi)＝∫vitidt、

Qii＝s(vii)＝∫viitiidt；

The controller controls such that the above-mentioned first state and second state in the cleaning process after the nth point of the inner surface of the wafer cassette 1200 is cleaned for the nth time satisfy the formula (1):

Qnr＝∑qnr{a1*f(d,vnr),a2*s(vnr,r,r’),a3*e(d,r,r’)}

Q1r＝Q2r＝Q3r＝…Qnr (1)

wherein r is the number of times of washing, r is a natural number of 2 or more, e (d, r, r')<e (d, r-1'). qnr is the amount of solvent at the nth point of cleaning, qnr is the functional relationship of the pressure f at the nth point of solvent at the nth point of cleaning, the path s of solvent through the nth point of cleaning, and the effective amount e of cleaning components at the nth point of solvent at the nth point of cleaning, f is the function of the amount d of solvent and the speed vnr at the nth time (also the number of times redundancy r 'is considered, not shown in the formula), s is the function of the speed vnr at the nth time (also the number of times redundancy r' is considered, not shown in the formula), the number of times of cleaning r, and the number of times redundancy r ', e is the function of the amount d of solvent, the number of times of cleaning r, and the number of times redundancy r'; the redundancy r 'may be in the order of magnitude lower than the number r of washes, with a single wash r counting 1, and the redundancy r' being a positive number less than 1, such as 0.1; the redundancy r 'may also be of a magnitude order higher than the number r of washes, a single wash 1, with the redundancy r' being a positive 10 or 10.1 number greater than 1; the redundancy is important for adjusting the additional cleaning process due to the loss of the solvent effective components during the active cleaning process, such as no loss of the solvent effective components during the cleaning process but only increased concentration of contaminants in the solvent and no shadow R 'is 0 when the cleaning effect is affected, and r' is not 0 when the cleaning effect is affected. a1, a2 and a3 are respectively weight relations among the pressure f of the solvent for cleaning the nth point, the path s of the solvent passing through the nth point and the effective amount e of cleaning components of the solvent for cleaning the nth point, wherein the value range of a1+a2+a3=1 or a1, a2 and a3 is 0.1-10, the relation among a1, a2 and a3 or the value range is used for adjusting f (d, vnr), s (vnr, r r '), and the overall contribution of e (d, r and r') to qnr or Qnr, such as a1=0 in the process of active cleaning adopting uniform pressure; if the solvent with a certain speed is the same (i.e. the speed of the solvent passing through each point is the same, the time is the same), a2=0; a3=0 when the concentration of the cleaning active ingredient (i.e., the active ingredient ratio) in the solvent (or extract) in the wafer cassette is controlled and stabilized in real time. Preferably, the cleaning times r (also consider the times of redundancy r', not shown in the formula) at least include the cycle times of solvent cleaning, so that the whole most part adopts a standard uniform cycle active cleaning process, and the non-cycle process is matched with the part which does not reach the same cleaning degree in the complementary cleaning cycle cleaning process, so that the cleaning degrees Qnr of n points on the inner surface of the wafer box are the same. In some cases, such as where the wafer cassette top surface contaminant level is less sensitive, the number of cleanings r (also taking into account the number of redundancy r', not shown in the formula) is the number of cycles, i.e., the four surfaces adjacent to the top surface are cleaned thoroughly with a particular cyclic activity (e.g., rotating about the top surface center axis), and the opposite top surface is cleaned thoroughly with a particular cyclic activity (e.g., shaking only marginally over the solvent or extract on the bottom surface). As described in the simulation, the proper f (d, vi), s (vi), e (d, s) and especially the solvent amount d or the cleaning process without the third state (i.e. without the solvent amount d of the third state) cannot be adopted according to the formula (3) _not3rdstatus And a cleaning path s _not3rdstatus ) Then, the first state, the second state, and the third state of the n-th point on the inner surface of the wafer cassette 1200 after the nth cleaning process is performed for the nth cleaning process satisfy the formula (1) and the formula (2), which are not described herein.

When the qnr, qnr-1, qnr-2 of the n points on the inner surface of the wafer cassette 1200 satisfy the formula (2), the cleaning is ended:

a5*qnr-2＝qnr+a4*qnr-1 (2)

wherein qnr is the cleaning amount of the solvent for the nth cleaning point, qnr-1 is the cleaning amount of the solvent for the nth cleaning point, qnr-2 is the cleaning amount of the solvent for the nth cleaning point; the value range of a5 is 0.01 to 0.2, and the value range of a4 is 0.1 to 0.3; alternatively, a4 and a5 are positive numbers less than 1, satisfying a5=1/2×a4 ² That is, the magnitude relation between the cleaning amount qnr and the cleaning amounts qnr-1, qnr-2 of the previous two times is sequentially and unevenly increased, whereas the magnitude relation between the cleaning amounts qnr-2, qnr-1, qnr is sequentially and rapidly decreased, and the cleaning amounts qnr-2, qnr-1 are at least different by a factor of more than 2, wherein the formulas (1) and (2) are input in the form of the simulated cleaning process comprising the optimal solvent amount d (or dex), the minimum cleaning times r and/or the shortest actual length cleaning path.

In one embodiment, the present cleaning/extraction device further comprises a support member 1100 fixedly connected to the power unit 1000, having a vertical projected area and a weight greater than all of the above structures; it should be noted that, when the power device 1000 is heavy enough and the height of the axis of the rotating shaft 1310 from the supporting surface is greater than the sum of the length of the connecting shaft 1313 and the diagonal length of the wafer cassette 1200, the supporting member 1100 is not required to be separately provided, which is not described in detail herein by the applicant.

The invention provides a device for extracting pollutants in a wafer box, which uses machinery and a program to replace manual work to accurately adjust the cleaning process in real time according to an optimal cleaning path, realizes uniform and standard cleaning of all wafer boxes, has low solvent/extraction liquid usage amount and saves cost.

The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Therefore, it is intended that all equivalent modifications and changes which do not depart from the spirit and technical spirit of the present invention will be covered by the appended claims.

Claims

1. The device for extracting the pollutants in the wafer box comprises a controller, a power device controlled by the controller, a rotating shaft and a connecting shaft; it is characterized in that the utility model also comprises,

a vertical groove for controlling the connection shaft to slide in a vertical direction to realize a first state rotation of the wafer cassette; the first state is that the wafer box is horizontal with the first surface, and the wafer box rotates around the axis;

a horizontal groove for controlling the connecting shaft to slide in a horizontal direction to realize a second state rotation of the wafer cassette; the second state is that the first surface is vertical, and the wafer box rotates around the axis;

the rotating shaft is fixedly connected with the universal device, the power device drives the rotating shaft to rotate around the axis of the rotating shaft and drives the universal device and the connecting shaft in the universal device to rotate so as to drive the wafer box to rotate around the axis; or the wafer box comprises a direction control shaft coaxial with the rotating shaft, the direction control shaft is connected with the connecting shaft and allows the connecting shaft to freely change directions in a hemispherical space, and the power device drives the direction control shaft to rotate and drives the connecting shaft and even the wafer box to rotate around the axis.

2. The apparatus of claim 1, wherein the gimbal further comprises,

an inclined groove for controlling the connecting shaft to slide in an inclined direction so as to realize a third state rotation of the wafer cassette;

the third state is to tilt the first face and rotate the wafer cassette about the axis to clean a predetermined area.

3. The device of claim 1, wherein the gimbal is sheet-like or semi-circular.

4. The device of claim 1, wherein the connection shaft rotates synchronously or asynchronously with the rotation shaft.

5. The device of claim 2, wherein the vertical slot, the horizontal slot, or the angled slot includes a positioning structure that mates with the connecting shaft to fix a direction.

6. The device according to claim 2, wherein the predetermined area comprises at least a ridge, and/or constitutes a part of both sides of the ridge.

7. The apparatus of claim 1, wherein the controller controls such that a relationship between a degree of cleaning at which a cleaning process satisfies the first state and the degree of cleaning at the second state is related to a ratio of areas to be cleaned;

The cleaning process satisfies the formula (3):

ak＝Qi/Qii

Qi＝q{a6*f(d,vi),a6*s(vi),a8*e(d,s)}

Qii＝q{a6*f(d,vii),a7*s(vii),a8*e(d,s)} (3)

8. The apparatus of claim 7, wherein a6=a8=0, the solvent travels the same distance in the first state and the second state, and the first state cleaning Qi and the first state cleaning Qii are expressed as:

Qi＝s(vi)＝∫vitidt

Qii＝s(vii)＝∫viitiidt

9. The apparatus of claim 7, wherein the first state is performed prior to the second state,

e (d, s (vi)). Gtoreq.e (d, s (vii)); or alternatively, the process may be performed,

10. The apparatus according to claim 1, wherein the controller controls such that the cleaning process after the nth point is subjected to the r-th cleaning satisfies the formula (1):

Qnr＝∑qnr{a1*f(d,vnr),a2*s(vnr,r,r’),a3*e(d,r,r’)}

Q1r＝Q2r＝Q3r＝…Qnr (1)

qnr is the cleaning amount of the solvent for the nth point, qnr-1 is the cleaning amount of the solvent for the (r-1) th point, qnr-2 is the cleaning amount of the solvent for the (r-2) th point; when qnr, qnr-1, qnr-2 satisfy the formula (2), the cleaning is ended:

a5*qnr-2＝qnr+a4*qnr-1 (2)

wherein, the value range of a5 is 0.01-0.2, and the value range of a4 is 0.1-0.3; alternatively, a4 and a5 are positive numbers less than 1, satisfying a5=1/2×a4 ² 。