CN116682812A - LED light bar and display panel - Google Patents

LED light bar and display panel Download PDF

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Publication number
CN116682812A
CN116682812A CN202310713507.0A CN202310713507A CN116682812A CN 116682812 A CN116682812 A CN 116682812A CN 202310713507 A CN202310713507 A CN 202310713507A CN 116682812 A CN116682812 A CN 116682812A
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CN
China
Prior art keywords
metal
plating layer
metal plating
substrate
upper substrate
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Pending
Application number
CN202310713507.0A
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Chinese (zh)
Inventor
胡永恒
项文斗
刘乐鹏
李运华
梁海志
孙平如
邢美正
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Huizhou Jufei Optoelectronics Co ltd
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Huizhou Jufei Optoelectronics Co ltd
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Priority to CN202310713507.0A priority Critical patent/CN116682812A/en
Publication of CN116682812A publication Critical patent/CN116682812A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

The application provides an LED lamp bar and a display panel, wherein the LED lamp bar adopts an upper substrate and a lower substrate to form a substrate in a combined way, a through hole is formed on the upper substrate alone, a blind hole is formed on the lower substrate alone, and the blind hole is cut into two parts, wherein the through hole is formed on the upper substrate alone, the blind hole is formed on the lower substrate alone, the metal heat conduction column is arranged in the through hole, the metal conductive layer is formed in the blind hole, and the corresponding metal plating layers are formed on the upper substrate and the substrate by adopting the mature process, so that the LED lamp bar has good universality, high realization simplicity, high efficiency and yield, low cost and easy mass production popularization and use; the metal conducting layer of the side wall after the blind hole is cut forms a part of the welding area, the blind hole can be used for containing solder paste in the welding process, the distance between adjacent LED chips or LED lamp beads is further reduced, the light mixing effect is improved, and the black edge size of the display screen manufactured by the method is reduced.

Description

LED light bar and display panel
The application discloses an LED lamp bead plate, a manufacturing method thereof and a display panel, which are divisional applications of the original Chinese patent application. The application number of the original application is 202011040024.1; the application date of the original application is 9 months and 28 days in 2020.
Technical Field
The invention relates to the field of light emitting diodes, in particular to an LED light bar and a display panel.
Background
At present, the color gamut and the brightness of mobile communication terminals such as pen phones, flat panels and mobile phones for the backlight light source are higher and higher, the thickness is thinner and thinner, and the original bracket type LED lamp bead light source can not meet the requirements of small size and high brightness gradually. Therefore, in order to reduce the size of the stand-alone type LED bead light source, a substrate type LED light source has been proposed in the industry. This technique requires making blind holes in a single-layer substrate and forming through holes communicating with the blind holes at the positions of the corresponding blind holes. The through holes and the blind holes are drilled from the front side and the back side of the single-layer substrate respectively, the drilling depth is half of the thickness of the single-layer substrate, the technical difficulty is very high, and the mass production is very low. In the technology, conductors are filled in the communicated through holes and the blind holes, and heat generated by the LED chip on the PCB is mainly dissipated through the conductors, so that the heat dissipation performance is poor.
Therefore, how to provide a backlight source with low technical difficulty, easy mass production and good heat dissipation performance is a technical problem to be solved at present.
Disclosure of Invention
The LED lamp strip and the display panel provided by the invention solve the problem of how to simplify the backlight manufacturing process, improve the light mixing effect and reduce the manufacturing cost on the basis of meeting the brightness requirement.
In order to solve the above technical problems, an embodiment of the present invention provides an LED light bar, the light bar includes a substrate, a plurality of LED chips disposed on the substrate, and a package body disposed on the substrate to cover the LED chips, wherein:
the substrate comprises an upper substrate and a lower substrate which are fixed together; the front surface of the upper substrate is provided with a plurality of die bonding areas which are arranged in a unidirectional array, and first metal plating layers which are formed in the die bonding areas, the back surface of the upper substrate is plated with second metal plating layers which correspond to the first metal plating layers, and the upper substrate is also provided with through holes which are used for communicating the first metal plating layers in the die bonding areas with the corresponding second metal plating layers, and metal heat-conducting columns which are filled in the through holes and are used for respectively electrically connecting the corresponding first metal plating layers and the corresponding second metal plating layers;
the LED chips are respectively arranged in the die bonding areas and are respectively and electrically connected with the corresponding first metal plating layers, one lamp bead corresponds to at least one die bonding area, the packaging body is formed on the front surface of the upper substrate, and the LED chips in the die bonding areas are covered;
a third metal plating layer which corresponds to the second metal plating layer and is electrically connected with the second metal plating layer is plated on the front surface of the lower substrate;
The back of the lower substrate is plated with a fourth metal coating corresponding to the third metal coating, the lower substrate is also provided with a blind hole communicated with the corresponding third metal coating and fourth metal coating, and a metal conductive layer formed on the side wall of the blind hole and used for conducting and connecting the corresponding third metal coating and fourth metal coating;
the blind hole is cut into two parts, and the metal conductive layer of the blind hole side wall forms a part of the welding area.
Optionally, an insulating bonding layer is arranged between the upper substrate and the lower substrate, the second metal plating layer of the upper substrate and the third metal plating layer of the lower substrate after bonding are partially overlapped, and the upper substrate and the lower substrate are electrically connected through an overlapped area.
Optionally, an insulating bonding layer is arranged between the upper substrate and the lower substrate, the second metal plating layer of the upper substrate and the third metal plating layer of the lower substrate after bonding are not overlapped, and a conductive material is further arranged between the upper substrate and the lower substrate to form electrical connection.
Further, the conductive material is filled in the gap between the second metal plating layer and the third metal plating layer.
Optionally, the package body includes a luminescence conversion layer disposed on the upper substrate and covering the LED chips in the die bonding regions, and a reflective adhesive layer disposed on the upper substrate and surrounding the luminescence conversion layers in the die bonding regions.
Further, at least two LED chips are arranged in the die bonding area, and at least two first metal coatings in the die bonding area share one corresponding second metal coating.
Further, at least two LED chips are arranged in at least one die bonding area, and the reflective adhesive layer is formed between adjacent LED chips in the die bonding area.
Optionally, the first metal plating layer includes:
a first copper plating layer, a first nickel plating layer and a first gold plating layer which are sequentially arranged on the front surface of the upper substrate from bottom to top; and/or the number of the groups of groups,
the fourth metal plating layer includes:
and a second copper plating layer, a second nickel plating layer and a second gold plating layer which are sequentially arranged on the back surface of the lower substrate from bottom to top.
Optionally, at least three first positioning marks which are not on the same straight line are arranged on the upper substrate, second positioning marks with positions corresponding to the first positioning marks one by one are arranged on the lower substrate, and the first positioning marks and the second positioning marks are used for bonding and aligning the upper substrate and the lower substrate.
In order to solve the technical problems, the embodiment of the invention also provides a display panel which comprises a display backboard and any LED light bar, wherein the LED light bar is arranged on the display backboard to form a side-emitting light source.
Advantageous effects
The invention provides an LED lamp bar and a display panel, wherein a substrate adopted by the LED lamp bar consists of an upper substrate and a lower substrate, a first metal coating and a second metal coating are respectively arranged on the front surface and the back surface of the upper substrate, a through hole for communicating the first metal coating with the second metal coating is arranged on the upper substrate, a metal heat conduction column for communicating the first metal coating with the second metal coating is arranged in the through hole, a third metal coating corresponding to the second metal coating and a fourth metal coating corresponding to the third metal coating are respectively arranged on the front surface and the back surface of the lower substrate, blind holes for communicating the corresponding third metal coating with the fourth metal coating are respectively arranged on the front surface and the back surface of the lower substrate, and a metal conductive layer for electrically connecting the third metal coating and the fourth metal coating is arranged on the wall of each blind hole; the upper substrate and the lower substrate may be fixed together by an adhesive layer to form a substrate; then, setting corresponding LED chips on an upper substrate and electrically connecting the corresponding LED chips with respective first metal plating layers, and forming a packaging body for covering the LED chips, wherein the blind holes are cut into two parts, and the LED lamp strips and the display panel using the LED lamp strips have the advantages that:
The upper substrate and the lower substrate are combined to form the substrate, the through holes are formed on the upper substrate alone, the blind holes are formed on the lower substrate alone, the metal heat conduction columns are arranged in the through holes, the metal conductive layers are formed in the blind holes, and the corresponding metal plating layers are formed on the upper substrate and the substrate by adopting the mature processes, so that the substrate is good in universality, simple to realize, high in efficiency and yield, low in cost and easy to popularize and use in mass production;
the substrate formed by adopting the upper substrate and the lower substrate is relatively a single-layer substrate with the same thickness, and the height of the metal heat conduction column is only half of the height of the metal heat conduction column used for guiding out heat generated by the LED chip in the single-layer substrate and can be even smaller, so that a heat dissipation path can be greatly reduced, and the heat dissipation performance is better;
the LED lamp strip can omit the use of an LED bracket, compared with the area occupied by the existing single bracket type LED lamp bead on a circuit board, the size of an LED chip can be larger, and meanwhile, the occupied area of the LED chip can be reduced, so that more LED chips can be arranged on the basis of the same area, and the brightness of the single LED chip is larger, so that the brightness of the single chip can be improved, and the overall brightness can be comprehensively improved; meanwhile, the LED brackets are omitted, so that the distance between adjacent LED chips is smaller than the distance between the bracket type LED lamp beads on the premise that tin connection short circuit is not generated, the light mixing distance between lamps can be reduced, and the light mixing efficiency is improved; and the blind hole is divided into two parts, and only a metal conducting layer is formed on the hole wall, and solder paste can shrink in the blind hole in the welding process, so that the light mixing distance between lamps can be further reduced, the black edge width of the frame of the LED backlight screen can be further reduced, the display panel is further thinned, and the visual effect is improved.
Drawings
Fig. 1 is a schematic diagram of a manufacturing process of an LED lamp bead board according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a substrate manufacturing process according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a first metal plating layer manufacturing process according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a fourth metal plating layer manufacturing process according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of an alignment bonding process according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a package manufacturing process according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of another substrate manufacturing process according to an embodiment of the present invention;
fig. 8 is a schematic diagram of a flip-chip LED chip package manufacturing process according to an embodiment of the present invention;
fig. 9 is a schematic diagram of a manufacturing flow of a front-mounted LED chip package according to an embodiment of the present invention;
fig. 10 is a schematic diagram of a structure of an LED lamp bead plate according to an embodiment of the present invention;
FIG. 11 is a second schematic diagram of an LED lamp bead structure according to an embodiment of the present invention;
fig. 12 is a schematic diagram III of an LED lamp bead plate structure according to an embodiment of the present invention;
fig. 13 is a schematic diagram fourth of a structure of an LED lamp bead plate according to an embodiment of the present invention;
fig. 14 is a schematic diagram fifth embodiment of an LED lamp bead structure according to the present invention;
fig. 15 is a schematic diagram sixth of a structure of an LED lamp bead plate according to an embodiment of the present invention;
FIG. 16 is a schematic view of a first metal coating structure according to an embodiment of the present invention;
FIG. 17 is a schematic view of a fourth metal coating structure according to an embodiment of the present invention;
FIG. 18 is a schematic diagram showing a second metal coating and a third metal coating according to an embodiment of the present invention;
FIG. 19 is a second schematic diagram of a second metal coating and a third metal coating according to an embodiment of the present invention;
fig. 20 is a schematic structural diagram of a display panel according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following detailed description of the embodiments of the present invention is given with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The embodiment provides an LED light bar or LED light bead board with low technical difficulty, easy mass production and good heat dissipation performance, and in order to facilitate understanding, the manufacturing method of the LED light bar or LED light bead board is described in an exemplary manner.
Referring to fig. 1, the method for manufacturing the LED light bar or the LED light bead board according to the embodiment may include, but is not limited to:
s101: and manufacturing a substrate.
In one example of this embodiment, S101 is shown with reference to fig. 2, which includes, but is not limited to:
s201: an upper substrate and a lower substrate are provided.
In this embodiment, the substrate bodies of the upper substrate and the lower substrate are made of insulating materials, and in some examples, the substrate bodies may include, but are not limited to, one or more resins selected from acrylic, poly-urethane, epoxy, vinyl, polystyrene, polyamide, vein, and urea. Other insulating materials may be used, and are not described here.
It should be understood that the substrate in this embodiment is not limited to include only a substrate and a lower substrate, and other substrates may be disposed under the lower substrate or between the upper substrate and the lower substrate as required.
In this embodiment, the materials of the upper substrate and the lower substrate may be the same or different. The thickness of the two materials can be the same or different according to the requirement, and the two materials can be flexibly set according to the application requirement.
In this embodiment, a plurality of die bonding areas for die bonding the LED chips are formed on the upper substrate, and one LED chip can be set in one die bonding area according to the requirement, and two or more LED chips can also be set according to the requirement, and the set LED chips can adopt at least one of flip-chip LED chips and forward-mounted LED chips according to the requirement.
In addition, it should be understood that, in this embodiment, the number of the LED chips disposed in each die bonding region may be the same, or may be different, or at least a portion of the number of the LED chips disposed in the die bonding region may be the same, and a portion of the number of the LED chips disposed in the die bonding region may be different.
Optionally, the arrangement manner of the plurality of die bonding areas formed on the front surface of the upper substrate in the embodiment may be flexibly set, for example, may be in an array arrangement, and may be set into a plurality of rows and columns (i.e. LED rectangular light panels) according to requirements when in an array arrangement, or may be a one-way array of a plurality of rows and columns or a plurality of rows, for example, referring to the backlight 705 shown in fig. 20, and is a strip-shaped LED light bar (LED chips are linearly arranged); other arrangement modes can be set according to the requirements, and the arrangement mode is not limited to array arrangement. For example, two adjacent rows or two columns may be arranged in a staggered arrangement.
It should be understood that, in this embodiment, the components to be disposed in the at least one die bonding area include, but are not limited to, an LED chip, and may further include components such as a resistor, a diode, a triode, and the like, and when other components other than the LED chip are further included, the corresponding first metal plating layer and the second metal plating layer may be disposed correspondingly according to specific distribution of the other components on the upper substrate and electrical connection relationship between the LED chip and the other components. And will not be described in detail herein.
S202: through holes are formed in the areas of each die bonding area of the upper substrate.
It should be understood that the manner of forming the through hole on the upper substrate in this embodiment may be various hole forming manners, for example, but not limited to drilling, etching, etc.
It should be understood that the cross-sectional shape of the through hole in this embodiment may be flexibly set, for example, may be set to a regular shape, such as a round hole, a rectangular hole, a prismatic hole, a hexagonal hole, a triangular hole, an elliptical hole, or the like, or may be set to an irregular shape. And the shapes of the through holes can be the same, or can be set to be different according to the requirements, or are partially the same, and are partially different. It should be understood that the size of the through hole in this embodiment may be flexibly set according to the requirement, for example, the aperture of the through hole may be set to be, but not limited to, 0.035mm-0.3mm.
S203: forming a first metal coating in each die bonding region of the upper substrate by a gold plating process, forming a second metal coating corresponding to the first metal coating on the back surface of the upper substrate by a gold plating process, and forming metal heat conducting columns in the through holes, wherein the metal heat conducting columns are used for electrically connecting the first metal coating in each die bonding region with the corresponding second metal coating.
It should be understood that the metal heat conductive pillars formed in the through holes in the present embodiment have good conductive performance, and may be, but not limited to, gold, silver, copper, etc. And in order to further improve the heat conduction and electric conduction performance, the metal heat conduction column can fill up the through hole.
It should be understood that the metal heat conductive posts in this embodiment may be formed before the first metal plating layer and/or the second metal plating layer are formed on the upper substrate, and after the metal heat conductive posts are formed, the first metal plating layer and the corresponding second metal plating layer are respectively formed on the front surface and the back surface of the upper substrate; the metal heat conductive posts may also be formed simultaneously in the process of forming the first metal plating layer and/or the second metal plating layer on the upper substrate.
It should be appreciated that in some examples of this embodiment, the second metal plating pole may be directly constituted by one end of the metal heat conductive post on the back surface of the upper substrate. At this time, there may be no need to provide an additional second metal plating layer, and such an equivalent alternative is also within the scope of the present embodiment.
It should be understood that the first metal plating layer and the corresponding second metal plating layer formed on the upper substrate in this embodiment may be formed by different process steps, or may be formed directly in one process step. For example, in one example, a first metal plating layer may be formed on the front surface of the upper substrate, then a second metal plating layer may be formed on the back surface of the upper substrate, or a second metal plating layer may be formed on the back surface of the upper substrate, then a first metal plating layer may be formed on the front surface of the upper substrate, or the first metal plating layer and the corresponding second metal plating layer may be simultaneously formed directly in one process step.
It should be understood that the formation manner of the first metal plating layer and the corresponding second metal plating layer in this embodiment is not limited by a specific gold plating process, as long as the first metal plating layer and the corresponding second metal plating layer can be reliably formed. It should be understood that the process of forming the first metal plating layer and the corresponding second metal plating layer in this embodiment is not limited to the gold plating process, and other equivalent alternatives may be adopted, for example, but not limited to, the deposition method may be adopted to form the first metal plating layer and the corresponding second metal plating layer, which will not be described herein.
It should be understood that, in some examples of the present embodiment, the materials used for the first metal plating layer and the second metal plating layer, the thicknesses of the first metal plating layer and the second metal plating layer, and the like may be the same or different according to the requirements.
Alternatively, in one example of the present embodiment, in order to enhance the soldering effect and performance between the first metal plating layer and the LED chip, a process of forming the first metal plating layer on the upper substrate may be illustrated with reference to fig. 3, which includes but is not limited to;
s301, forming a first copper plating layer on the front surface of the upper substrate.
S302: a first nickel plating layer is formed over the formed first copper plating layer.
S303: a first gold plating layer is formed over the formed first copper plating layer.
S204: blind holes are formed in the lower substrate.
It should be understood that the blind holes may be formed on the lower substrate in various manners, such as drilling, etching, etc. It should be understood that the cross-sectional shape of the blind hole in this embodiment may be flexibly set, for example, may be set to a regular shape, such as a round hole, a rectangular hole, a prismatic hole, a hexagonal hole, a triangular hole, an elliptical hole, etc., or may be set to an irregular shape. The blind holes can be identical in shape, or can be arranged differently or partially identical or partially different according to the requirements. It should be understood that the size of the blind hole in this embodiment may be flexibly set according to the requirement, for example, the aperture of the blind hole may be set to be, but not limited to, 0.3mm-0.8mm.
It should be understood that the shape of the blind hole in this embodiment may be the same as that of the through hole described above, or may be different according to the arrangement. The blind holes in this embodiment are also through holes penetrating the front and back surfaces of the lower substrate. The height of the blind hole in this embodiment may be the same as that of the through hole, or may be different from that of the through hole according to the requirement.
In this embodiment, the positions of the through holes and the blind holes do not correspond, that is, after the upper substrate and the lower substrate are aligned and bonded, the through holes and the blind holes do not overlap, or only partially overlap, so that the positions of the through holes and the blind holes are staggered, and the overall strength of the substrate formed after the upper substrate and the lower substrate are aligned and bonded can be improved; meanwhile, the metal heat conductor in the through hole is electrically connected with the metal conductive layer in the blind hole through the corresponding second metal plating layer and the third metal plating layer, and the electric connection is realized without alignment between holes, so that the alignment is simpler and more accurate, and the reliability of the formed substrate is better.
S205: forming a third metal coating corresponding to the second metal coating on the front surface of the lower substrate by gold plating, forming a fourth metal coating corresponding to the third metal coating on the back surface of the lower substrate by gold plating, and forming metal conductive layers respectively conductively connecting the corresponding third metal coating and fourth metal coating on the side walls of the blind holes.
It should be understood that the metal conductive layer formed in the blind via in this embodiment has good conductive performance, and may be, but not limited to, gold, silver, copper, etc. The metal conductive layer can be formed on the side wall of the blind hole (the side wall of the blind hole can be fully covered or partially covered) and the blind hole is not filled, so that the residual space of the blind hole can be used for containing solder paste in the welding process, and the fourth metal coating and the blind hole form a retracted bonding pad together; therefore, the distance between adjacent LED chips or LED lamp beads can be further reduced, the light mixing effect is improved, and the black edge size of the display screen manufactured by the method is reduced. It should be understood that the thickness of the metal conductive layer in this embodiment can be flexibly set. The metal conductive layer can be formed before the third metal plating layer and/or the fourth metal plating layer are formed on the lower substrate, and the third metal plating layer and the corresponding fourth metal plating layer can be respectively formed on the front surface and the back surface of the lower substrate after the metal conductive layer is formed in the blind hole; the metal conductive layer may be formed simultaneously in the process of forming the third metal plating layer and/or the fourth metal plating layer on the lower substrate.
It should be understood that the third metal plating layer and the corresponding fourth metal plating layer formed on the lower substrate in this embodiment may be formed separately by different process steps, or may be formed directly in one process step. For example, in one example, the third metal plating layer may be formed on the front surface of the lower substrate first, then the fourth metal plating layer may be formed on the back surface of the lower substrate, or the fourth metal plating layer may be formed on the back surface of the lower substrate first, then the third metal plating layer may be formed on the front surface of the lower substrate, or the third metal plating layer and the corresponding fourth metal plating layer may be simultaneously formed directly in one process step.
It should be understood that the formation manner of the third metal plating layer and the corresponding fourth metal plating layer in this embodiment is not limited by the specific gold plating process, as long as the third metal plating layer and the corresponding fourth metal plating layer can be reliably formed. It should be understood that the process of forming the third metal plating layer and the corresponding fourth metal plating layer in this embodiment is not limited to the gold plating process, and other equivalent alternatives may be adopted, for example, but not limited to, the deposition method may be adopted to form the third metal plating layer and the corresponding fourth metal plating layer, which will not be described herein.
It should be understood that, in some examples of the present embodiment, the materials used for the third metal plating layer and the fourth metal plating layer, the thicknesses of the third metal plating layer and the fourth metal plating layer, and the like may be the same or different according to the requirements.
Alternatively, in one example of the present embodiment, in order to enhance the soldering effect and performance of the fourth metal plating layer with an external circuit board or other object, a process of forming the fourth metal plating layer on the lower substrate may be illustrated with reference to fig. 4, which includes but is not limited to;
s401, forming a second copper plating layer on the back surface of the lower substrate.
S402: and forming a second nickel plating layer on the formed second copper plating layer.
S403: and forming a second gold plating layer over the formed second copper plating layer.
S206: an adhesive layer is formed on the rear surface of the upper substrate in an area other than the second metal plating layer and/or on the front surface of the lower substrate in an area other than the third metal plating layer.
The adhesive layer in this embodiment is made of an insulating material. It should be understood that, in one example, the adhesive layer may be formed only outside the second metal plating layer on the back surface of the upper substrate, and the back surface of the upper substrate and the front surface of the lower substrate may be bonded after the upper substrate and the lower substrate are precisely aligned and pressed at the time of bonding. In another example, the bonding layer may be formed only outside the third metal plating layer on the front surface of the lower substrate, and the bonding of the back surface of the upper substrate and the front surface of the lower substrate may be achieved after the upper substrate and the lower substrate are precisely aligned and bonded at the time of bonding. In still another example, a soldering layer may be formed on the back surface of the upper substrate in an area other than the second metal plating layer, and an adhesive layer may be formed on the front surface of the lower substrate in addition to the third metal plating layer, and when bonding, the back surface of the upper substrate and the front surface of the lower substrate may be bonded after the upper substrate and the lower substrate are precisely aligned and pressed. The specific mode can be flexibly set according to specific requirements, and is not described herein.
S207: and aligning and bonding the upper substrate and the lower substrate through the bonding layer, and electrically connecting the corresponding second metal coating and third metal coating after bonding.
Alternatively, in some examples, in order to improve the accuracy of alignment of the upper substrate and the lower substrate, at least three first positioning marks that are not on the same line may be disposed on the upper substrate, and second positioning marks whose positions are in one-to-one correspondence with the first positioning marks may be disposed on the lower substrate, and in an example process of aligning and bonding the upper substrate and the lower substrate through the bonding layer, as shown in fig. 5, it may include, but is not limited to:
s501: accurate alignment is achieved through the first positioning mark on the upper substrate and the second positioning mark on the lower substrate.
S502: and pressing the upper substrate and the lower substrate which are accurately aligned, so as to bond the back surface of the upper substrate with the front surface of the lower substrate.
It should be appreciated that, in this embodiment, the first positioning mark and the second positioning mark may adopt any mark structure capable of realizing the above accurate alignment, for example, in one example, the first positioning mark may be a first positioning hole, and the first positioning hole includes at least three first positioning holes respectively distributed in at least three corners of the upper substrate, and correspondingly, the second positioning mark on the lower substrate may include second positioning holes or second positioning protrusions with positions and numbers corresponding to the first positioning holes. In another example, the first positioning mark may be a first positioning protrusion, and the first positioning protrusion includes at least three first positioning protrusions respectively distributed at least three corners of the upper substrate, and correspondingly, the second positioning mark on the lower substrate may include second positioning holes whose positions and numbers correspond to the first positioning protrusions.
In this example, after the upper substrate and the lower substrate are aligned and bonded by the adhesive layer, the corresponding second metal plating layer and third metal plating layer are electrically connected. In one example of the present example, at least a pair of corresponding second and third metal plating layers may at least partially overlap, the at least partial overlap in this manner including the second and third metal plating layers being fully overlapping, and the second and third metal plating layers being overlapping but not fully overlapping; in this example, the second metal plating layer and the third metal plating layer may form an electrical connection through the overlapping region.
In another example of the present example, there is no overlap between at least one pair of corresponding second metal plating layers and third metal plating layers, and before the upper substrate and the lower substrate are aligned and bonded by the bonding layer, the method may further include: and filling a conductive adhesive layer in a gap between the second metal coating and the third metal coating, so as to realize electric connection between the second metal coating and the third metal coating. The corresponding second metal coating and the third metal coating are arranged in a non-overlapping way, so that the overall thickness of the upper substrate and the lower substrate after being combined is smaller than that of the second metal coating and the third metal coating in a mode of at least partially overlapping, the overall thickness of the substrate can be reduced, and the size miniaturization and the light and thin reduction can be further facilitated.
It should be understood that the shapes and thicknesses of the first metal plating layer, the second metal plating layer, the third metal plating layer and the fourth metal plating layer in this embodiment can be flexibly set according to the requirements. For example, in one example of the present embodiment, the thickness between the second metal plating layer and the third metal plating layer may be set to be the same or different, and the shapes of the two may be set to be the same or different. Correspondingly, the shapes, the thicknesses and the like between the other metal plating layers and the third metal plating layer can be correspondingly and flexibly arranged.
Optionally, in this embodiment, when the second metal plating layer and the third metal plating layer at least partially overlap, before the upper substrate and the lower substrate are aligned and bonded by the bonding layer, in order to further improve the reliability of the conductive connection between the corresponding second metal plating layer and the third metal plating layer, the method may further include: and a conductive adhesive layer is arranged on the second metal coating and/or the third metal coating, after the upper substrate and the lower substrate are bonded in a pressing way, the conductive adhesive layer is arranged between the overlapping areas of the second metal coating and the third metal coating, so that the reliable connection of the overlapping areas of the second metal coating and the third metal coating can be ensured by the conductive adhesive layer, the air tightness can be improved, and the overall protective performance and reliability of the substrate can be further improved.
S102: and respectively arranging a plurality of LED chips in each die bonding area on the substrate, and electrically connecting the electrodes of the LED chips in each die bonding area with the first metal plating layer in the die bonding area.
It should be understood that, in this embodiment, the number of LED chips placed in each die bonding region among the plurality of die bonding regions formed on the upper substrate may be flexibly set according to specific requirements. For example, one LED chip may be placed, or two or more LED chips may be placed, or one LED chip may be placed in a partial die bonding area, and two or more LED chips may be placed in a partial die bonding area. The device can be flexibly arranged according to requirements.
In this embodiment, for the die bonding area where the plurality of LED chips are placed, the plurality of LED chips in the die bonding area may be independent of each other and have no electrical connection relationship. At least one part of LED chips in the die bonding area can be set as series connection, parallel connection or series-parallel connection combination according to the requirements; the first metal coating of the die bonding area can be flexibly set according to the specific relation among the LED chips. For example, when at least a portion of the LED chips in the die bonding regions are arranged in series, parallel, or series-parallel connection as desired, electrically connecting the electrodes of the LED chips in each die bonding region with the first metal plating layer includes:
At least one electrode of at least two LED chips in the die bonding area shares a first metal coating; or, at least two first metal coating layers in the die bonding area share one corresponding second metal coating layer.
That is, at least one first metal coating in the die bonding region can be used for electrically connecting the electrodes of at least two LEDs;
or at least one second metal coating is electrically connected with at least two corresponding first metal coatings in the die bonding area, at this time, the first metal coatings in the die bonding area can not be shared any more,
or, the at least one third metal coating is electrically connected with the corresponding at least two second metal coatings, and the corresponding at least two second metal coatings and the corresponding at least two first metal coatings of the at least two second metal coatings can not be shared any more.
Therefore, in this embodiment, a single or multiple LED chips may be set for one die bonding area according to the needs, and when multiple LED chips are set, the electrical connection relationship between the LED chips may also be flexibly set according to specific needs, so that various application scenarios may be better satisfied, for example, scenarios such as backlight display or illumination may be better satisfied.
S103: and forming a packaging body covering the LED chips in each die bonding area on the front surface of the upper substrate.
Optionally, in some examples of the present embodiment, the package may include a luminescence conversion layer formed on the upper substrate to cover the LED chip in each die bonding region, and a reflective adhesive layer formed on the upper substrate to enclose the luminescence conversion layer in each die bonding region. The luminescence conversion layer in this embodiment may be a fluorescent glue layer, or may be a quantum dot thin film layer, or a combination between the fluorescent glue layer and the quantum dot thin film layer, or a combination of at least two of the fluorescent glue layer, the quantum dot thin film layer, and the transparent glue layer. Alternatively, in the present embodiment, the reflective glue layer may be implemented by, but not limited to, white wall glue. And when in surrounding, a single LED chip can be used as a unit for surrounding, or a single die bonding area can be used as a unit for surrounding, or a plurality of die bonding areas can be used for surrounding according to requirements, or all the die bonding areas on the front face are directly used as a whole, and a reflecting glue layer is formed only on the periphery of the front face. The device can be flexibly arranged according to requirements.
In one example of the present embodiment, one example of forming a package covering the LED chips in each die bonding region on the front surface of the upper substrate is shown with reference to fig. 6, which includes but is not limited to:
S601: a luminescence conversion layer covering the LED chips in each die bonding region is formed on the front surface of the upper substrate.
The luminescence conversion layer covering the LED chips in each die bonding region may be formed on the front surface of the upper substrate by, but not limited to, dispensing, molding, or the like.
S602: and cutting and removing the luminescence conversion layers around each die bonding area to obtain the reflective adhesive layer grooves.
S603: and forming a reflecting glue layer which surrounds the luminescence conversion layers in the die bonding areas respectively in the reflecting glue layer grooves. The reflective adhesive layers surrounding the luminescence conversion layers in the die bonding areas can be formed in the reflective adhesive layer grooves by a mode of scribing, dispensing, die pressing and the like.
In an embodiment, after the LED light bead board is obtained through the above steps, the LED light bead board may be cut as required to obtain a small LED light bead board, an LED light bar, or a single LED light bead. When in cutting, a single LED lamp bead plate (LED lamp strip) can be obtained by cutting in a row or column mode, or a single LED lamp bead can be obtained by cutting in a single die bonding area mode. The method can be flexibly set according to application requirements. When the LED lamp bead plate of the whole plate or the single LED lamp bead plate (LED lamp strip) is directly used, the interval between the adjacent LED chips can be greatly reduced relative to the interval between the adjacent bracket type LED lamp beads, so that more LED chips can be distributed in the same space, the brightness can be improved, and the light mixing effect can be improved. Accordingly, in some examples of the present embodiment, a dicing mark for indicating a dicing site may be formed on at least one of the upper substrate (e.g., on the front surface of the upper substrate) and the lower substrate (e.g., on the back surface of the lower substrate), and after forming a package covering the LED chips in each die bonding region on the front surface of the upper substrate, the method may further include:
And cutting along the cutting mark structure, wherein the blind hole is cut into two parts in the cutting process, and the metal conductive layer on the side wall of the blind hole forms a part of the welding area.
Optionally, in this embodiment, when at least two LED chips are disposed in at least one die bonding area, a reflective adhesive layer may be formed between adjacent LED chips in the die bonding area; the reflective glue layer can be omitted between adjacent LED chips according to the requirements.
For further understanding, a specific process for manufacturing the LED bead board or the LED light bar is described below as an example, and the manufacturing process may include a process for manufacturing the substrate and a process for manufacturing the LED chip package. An exemplary substrate fabrication flow is shown with reference to fig. 7, which includes, but is not limited to:
s701: an upper substrate and a lower substrate are provided, and cleaning treatment is performed on the upper substrate and the lower substrate, respectively.
S702: and drilling through holes with the diameter of 0.075mm in the upper substrate raw material plate according to the design positions (and in each die bonding area).
S703: and drilling blind holes in the raw material plate of the lower substrate according to the designed positions, wherein the diameters of the blind holes are 0.3mm.
S704: copper pillars are buried in the through holes of the upper substrate.
S705: electroplating copper on the upper substrate, and further filling the through holes by electroplating until filling.
S706: the front and back surfaces of the upper substrate, particularly the via locations, are polished flat.
S707: and polishing the front and back surfaces of the flattened substrate to form a first metal coating and a second metal coating respectively through circuits.
In this example, the first metal plating layer and the second metal plating layer are both copper layers, and the through holes of the upper substrate after electroplating are completely buried in the upper substrate to form solid copper columns.
S708: and electroplating Cu layers at corresponding positions of the front surface and the back surface of the lower substrate to form corresponding third metal plating layers and fourth metal plating layers. In the process, a Cu layer is deposited on the inner wall of the blind hole to form a metal conductive layer.
S709: conductive adhesive is uniformly coated on the metal conductive layers on the back surface of the upper substrate and the front surface of the lower substrate, and adhesive is uniformly coated on the non-metal conductive layer area.
S710: positioning is performed through positioning holes or positioning holes and positioning protrusions of corners of the upper substrate and the lower substrate, lamination is performed, lamination accuracy is +/-5 mu m, and electric connection is formed between the copper pillars and the metal conductive layers in the corresponding blind holes after lamination.
S711: optionally, a Cu plating layer, a Ni plating layer and an Au plating layer may be respectively thickened on the first metal plating layer on the front surface and the fourth metal plating layer on the back surface of the substrate.
S712: white oil and green oil are printed on the corresponding position surface of the back surface of the lower substrate, and baking is carried out.
S713: optionally, the prepared substrate can be cut into small substrates or substrates for single LED lamp beads according to requirements.
Therefore, the substrate provided by the embodiment has the advantages of simple manufacturing process, high efficiency and low cost. The LED lamp bead plate, the LED lamp strip or the LED lamp bead prepared by the substrate can be widely and better applied to the liquid crystal screen backlight field of electronic products such as mobile phones, notebook computers, tablet computers and the like, the liquid crystal screen backlight field of industrial control, wearing and eye protection products and the like. The manufacturing process can utilize the mature single-layer board through hole technology, the substrate structure with the through holes and the blind holes can be formed by simply bonding the upper substrate and the lower substrate, the requirement on high-precision equipment is greatly reduced, the existing mature technology of the existing precision equipment is used for optimizing and improving, the blind hole structure substrate can be produced in quantity, the difficult problem that the drilling depth precision of the blind hole structure substrate manufactured by the single-layer board PCB is difficult to control can be avoided, and the industrial production can be realized. And the packaging technology threshold can be greatly reduced, and enterprises with liquid glue molding equipment and technology can realize industrialized production.
For easy understanding, in this embodiment, taking the LED chip as the flip LED chip as an example, the flip LED chip is packaged based on the above-obtained substrate to obtain an LED lamp bead board, an LED lamp strip or a lamp bead as an example, and referring to fig. 8, it includes but is not limited to:
s801: the prepared substrate can be placed in a feeding box and preheated for 1-4 hours at 120-170 ℃.
S802: and (3) soldering flux is arranged at the corresponding solid crystal position point on the front surface of the substrate, and the LED flip chip is placed.
S803: placing the substrate with the LED flip chip on a carrier, passing through a furnace, and eutectic (12-temperature zone furnace, introducing nitrogen).
S804: the hyperfurnace eutectic is followed by plasma Palsma cleaning.
S805: preparing fluorescent glue: in the example, the packaging adhesive A, the packaging adhesive B and the red powder and the green powder are prepared according to a certain weight proportion and are uniformly stirred.
S806: the die temperature of the die press is set to 140-160 ℃, fluorescent glue prepared in advance is put into a glue cylinder, and the time of liquid glue injection, die assembly and heating is set to 120-240 seconds; taking out, and baking at 140-170 deg.C for 1.5-3.5 hr.
S807: preparing transparent glue: packaging the adhesive A, preparing the adhesive B according to a certain weight ratio, and uniformly stirring.
S808: the molding temperature of the molding press is set to 140-160 ℃, transparent glue prepared in advance is put into a glue cylinder, and the time of liquid glue injection, mold closing and heating is set to 120-240 seconds; taking out, and baking at 140-160 deg.C for 1.5-3.5 hr.
S809: the glue channels are pre-cut, and the glue is cut only and the substrate is not cut.
S810: preparing white wall glue: the white wall glue A and the white wall glue B are prepared according to a certain weight proportion and stirred uniformly
S811: and filling the white wall glue into the pre-cut glue channel by using a scribing glue dispensing or mould pressing mode, and baking for 3.5 to 6.5 hours at the temperature of 140 to 160 ℃.
S812: polishing and thinning the top adhesive layer, and leaking regular transparent adhesive surface and white wall surface.
S813: optionally, cutting out single finished LED lamp beads or single LED lamp bead plates (LED lamp strips), and drying the water at 140-160 ℃.
For easy understanding, the following description will take the LED chip as a front-mounted LED chip as an example, and the front-mounted LED chip is packaged based on the above-manufactured substrate to obtain an LED lamp bead board, an LED lamp strip or a lamp bead as an example, and please refer to fig. 9, which includes but is not limited to:
s901: the prepared substrate can be placed in a feeding box and preheated for 1-4 hours at 120-170 ℃.
S902: and (3) dispensing die bond adhesive at the corresponding die bond position on the front surface of the substrate, and placing the LED forward-mounted chip.
S903: and (5) performing plasma Palsma cleaning after die bonding and baking.
S904: and (3) finishing bonding wires (gold wires, silver wires or copper wires can be adopted) of the electrode of the LED forward chip and the corresponding first metal coating.
S905: preparing fluorescent glue: in the example, the packaging adhesive A, the packaging adhesive B and the red powder and the green powder are prepared according to a certain weight proportion and are uniformly stirred.
S906: the molding temperature of the molding press is set to 145-165 ℃, fluorescent glue prepared in advance is put into a glue cylinder, and the time of liquid glue injection, mold closing and heating is set to 115-245 seconds; taking out, and baking at 140-170 deg.C for 1.5-3.5 hr.
S907: preparing transparent glue: packaging the adhesive A, preparing the adhesive B according to a certain weight ratio, and uniformly stirring.
S908: the molding temperature of the molding press is set to 140-160 ℃, transparent glue prepared in advance is put into a glue cylinder, and the time of liquid glue injection, mold closing and heating is set to 120-240 seconds; taking out, and baking at 140-160 deg.C for 1.5-3.5 hr.
S909: the glue channels are pre-cut, and the glue is cut only and the substrate is not cut.
S910: preparing white wall glue: the white wall glue A glue and the white wall glue B glue are prepared according to a certain weight proportion and are uniformly stirred.
S911: and filling the white wall glue into the pre-cut glue channel by using a scribing glue dispensing or mould pressing mode, and baking for 3.5 to 6.5 hours at the temperature of 130 to 165 ℃.
S912: polishing and thinning the top adhesive layer, and leaking regular transparent adhesive surface and white wall surface.
S913: optionally, cutting out single finished LED lamp beads or single LED lamp bead plates (LED lamp strips), and drying the water at 140-160 ℃. The whole LED lamp bead plate can also be directly adopted according to the requirements.
It should be understood that the LED chip in this embodiment is not limited to the flip-chip LED chip, the front-mounted LED chip, and a vertical LED chip or other types of LED chips may be used. The LED lamp beads, the LED lamp bars or the LED lamp bead plates prepared by the substrate and the LED chips can greatly reduce the technical difficulty, and are high in efficiency and yield, low in cost and easy to popularize and use in mass production; and reduce the paster interval, and then reduce the light mixing distance to reduce black frame, promote screen ratio under the same screen size, strengthen the user experience of comprehensive screen, be favorable to improving product market competition. And the single-layer PCB board lamp pearl, lamp strip or lamp pearl board of relative same thickness can reduce the heat dissipation route by a wide margin, promotes radiating efficiency to promote the life-span and the comprehensive light-emitting performance of product.
For easy understanding, the present embodiment is described below with reference to the drawings in an exemplary manner with a specific LED bead structure or LED strip structure; and it should be understood that the LED bead board or the LED light bar in the present embodiment is not limited to being manufactured by the above-described exemplary method.
Referring to fig. 10, the LED lamp bead board in this application example includes a substrate including an upper substrate 10 and a lower substrate 20 made of insulating materials, a plurality of die bonding regions are formed on the front surface of the upper substrate 10, and corresponding first metal plating layers 101 and second metal plating layers 103 are respectively formed in the plurality of die bonding regions on the front surface of the upper substrate 10 and on the back surface thereof. The upper substrate 10 is further formed with a through hole 104 communicating the corresponding first metal plating layer 101 and second metal plating layer 103, and a metal heat conductive post 102 formed in the through hole 104 to electrically connect the first metal plating layer 101 and second metal plating layer 103.
Referring to fig. 10, the upper substrate 10 is formed with through holes 104 penetrating the front and rear surfaces of the upper substrate 10 at regions where the corresponding first and second metal plating layers 101 and 103 are correspondingly formed, and the through holes 104 in this example are elliptical holes or circular holes, it should be understood that other shapes of holes are possible. In this example, the metal heat conductive posts 102, which conductively connect the corresponding first metal plating layers 101 and second metal plating layers 103, are formed in the through holes 104, and also penetrate through the front and rear surfaces of the upper substrate 10, so that the corresponding first metal plating layers 101 and second metal plating layers 103 are reliably conductively connected. The material of the metal heat conductive post 102 in this application example may be, but is not limited to, copper. In this application example, the first metal plating layer 101 of the upper substrate 10 is arranged in a display. And it should be understood that the division of the die bonding area in the present application example can be flexibly set. For example, one exemplary division is shown in fig. 10. One area enclosed by every two adjacent white wall adhesives 30 forms a die bonding area. In this application example, the die bonding area includes 4 first metal plating layers 101, and each adjacent pair of first metal plating layers 101 is used to be electrically connected to two electrodes of one LED chip, so that 2 LED chips 40 (shown in fig. 10 as a front-mounted LED chip or a mounted LED chip, see fig. 12) may be disposed in the die bonding area. The two arranged 2 LED chips can be mutually independent, and can also be connected in series, and when the series connection is realized, the two first metal plating layers 101 in the middle of the die bonding area can share one second metal plating layer 103. It should be understood that, in the embodiment, the LED bead board of the whole board may be manufactured in the form shown in fig. 14 or fig. 15, or a single LED bead board (LED strip) may be obtained by cutting in units of rows or columns, or a single LED bead may be obtained by cutting in units of a single die bonding area. The method can be flexibly set according to application requirements. When the LED bead board of the whole board or the LED bead board (LED light bar) is directly used, the interval between the adjacent LED chips 40 can be greatly reduced relative to the interval between the adjacent bracket type LED beads, so that more LED chips can be distributed in the same space, and not only can the brightness be improved, but also the light mixing effect can be improved. In this application example, the second metal plating layer 103 of the upper substrate 10 is distributed corresponding to the first metal plating layer 101 on the front surface. And the second metal plating layer 103 corresponding to the middle position in the die bonding region may be electrically connected to the two first metal plating layers 101 in the middle of the die bonding region at the same time. As is clear from fig. 10, the second metal plating layer 103 at the middle position in the die bonding region can be electrically connected to the two first metal plating layers 101 at the middle position in the die bonding region at the same time.
Referring to fig. 10, a third metal plating layer 201 and a fourth metal plating layer 203 formed on the front and back surfaces of the lower substrate 20, respectively; also formed on the lower substrate 20 are a blind via 202 communicating the corresponding third metal plating layer 201 and fourth metal plating layer 203, and a metal conductive layer 204 (see fig. 10) formed on the inner wall of the blind via 202 to electrically connect the third metal plating layer 201 and fourth metal plating layer 203. In other examples, the metal conductive layer 204 may optionally fill the blind via 202. The blind hole 202 shown in this example is also an oval or circular through hole, and it should be understood that the shape of the blind hole 202 can be flexibly set, and is not limited to a circular through hole. In this example, the through holes 104 are offset from and disposed adjacent to the blind holes 202.
In the present embodiment, as shown in fig. 10, the adhesive layer 50 may be formed by applying an adhesive on the front surface of the lower substrate 20 in the region outside the third metal plating layer 201, or the adhesive layer 50 may be formed by applying an adhesive on the rear surface of the upper substrate 10 in the region outside the second metal plating layer 103, or the adhesive layer 50 may be formed by applying an adhesive on both the upper substrate 10 and the lower substrate 20, and then the alignment bonding of the upper substrate 10 and the lower substrate 20 may be completed. When the alignment bonding is completed, an example can realize accurate alignment connection through three first positioning holes which are arranged on the upper substrate 10 and connected in a triangle shape and second positioning holes or protrusions which are arranged at corresponding positions on the lower substrate 20. Optionally, when the substrate needs to be cut, cutting may be performed in units of rows, columns, or single or multiple die bonding areas according to cutting marks preset on the upper substrate and/or the lower substrate to obtain multiple small LED bead boards or LED light bars, after cutting, the blind hole 202 is divided into two parts, and the metal conductive layer on the side wall of the blind hole forms a part of the welding area.
Referring to the LED bead board shown in fig. 11, compared with the LED bead board shown in fig. 10, the main difference is that white wall glue 30 is also formed between adjacent LED chips in the same die bonding area. White wall glue is not arranged between adjacent LED chips in the same die bonding area shown in FIG. 10.
In this embodiment, the corresponding pair of second metal plating layers 103 and third metal plating layers 201 may or may not overlap at least partially. For ease of understanding, the following description is given in terms of two non-overlapping examples.
As shown in fig. 18, the third metal plating layer 201 is in an oval shape, the second metal plating layer 103 is in a hollow oval shape, after the upper substrate 10 and the lower substrate 20 are aligned and adhered, the third metal plating layer 201 is located in a middle area of the second metal plating layer 103, and a gap x exists between the upper substrate and the lower substrate, and before the upper substrate and the lower substrate are aligned and adhered, a conductive material (for example, but not limited to, a conductive adhesive) may be filled in the middle area of the second metal plating layer 103 of the upper substrate, so that after the upper substrate 10 and the lower substrate 20 are aligned and adhered, the gap x between the third metal plating layer 201 and the second metal plating layer 103 is filled with the conductive material to form a reliable electrical connection.
Another example is shown in fig. 19, which differs from that shown in fig. 13 in the shape of the second metal plating layer 103 and the third metal plating layer 201. It should be appreciated that the second metal plating layer 103 and the third metal plating layer 201 in fig. 18 and 19 may be provided in reverse, i.e., the second metal plating layer 103 may be located within the third metal plating layer 201. Alternatively, in this embodiment, when the LED chips are disposed in the corresponding die bonding regions on the substrate, as shown in fig. 14 and 15, a luminescence conversion layer 60 covering each LED chip may be disposed on the substrate according to the requirement, where the luminescence conversion layer 60 may be a fluorescent glue layer or a quantum dot film layer.
In this embodiment, in order to improve the soldering effect and performance of the first metal plating layer 101 and the fourth metal plating layer 203, please refer to fig. 16 and 17, respectively, the first metal plating layer 101 includes a first copper plating layer 1011, a first nickel plating layer 1012, and a first gold plating layer 1013 that are stacked in order, and the second metal plating layer 203 includes a second copper plating layer 2031, a second nickel plating layer 2032, and a second gold plating layer 2033 that are stacked in order.
In this application example, see fig. 12 and 13, which differ from those shown in fig. 10 and 11 mainly in the type of LED chip 40 employed, fig. 10 and 11 are front-mounted LED chips, and fig. 12 and 13 are flip-chip LED chips.
Alternatively, in the present embodiment, the white oil layer 206 and the green oil layer 205 may be provided at corresponding positions on the back surface of the lower substrate 20, respectively, as required.
The LED lamp bead plate or the LED lamp strip provided by the embodiment adopts the combination of the upper substrate and the lower substrate to form the substrate, the through holes are formed on the upper substrate independently, the blind holes are formed on the lower substrate independently, the mature process can be adopted for realizing the arrangement of the metal heat conduction columns in the through holes, the mature process can also be adopted for forming the metal conductive layers in the blind holes and the corresponding metal plating layers on the upper substrate and the substrate, the universality is good, the realization is simple, the efficiency and the yield are high, the cost is low, and the mass production popularization and the use are easy; the substrate formed by adopting the upper substrate and the lower substrate is relatively a single-layer substrate with the same thickness, and the height of the metal heat conduction column is only half of the height of the metal heat conduction column used for heating the LED chip everywhere in the single-layer substrate, so that the heat dissipation path can be greatly reduced, and the heat dissipation performance is better; because the LED bracket is omitted, the distance between adjacent LED chips can be set smaller on the premise that tin connection short circuit cannot occur, the light mixing efficiency is improved, the blind holes are only provided with metal conducting layers on the hole walls, the metal conducting layers on the side walls of the cut blind holes form a part of a welding area, so that solder paste can shrink in the blind holes in the welding process, the distance between lamps can be further reduced, the light mixing distance is also reduced, and the width of the black edge of the frame of the LED backlight screen can be further reduced.
The embodiment also provides a display panel, which includes the LED lamp bead plate, the LED lamp strip or the LED lamp bead as shown in the above example as a backlight source. The display panel may be used for, but is not limited to, various displays, cell phones, PCs, advertising devices, and the like. An exemplary display panel is shown in fig. 20, and includes a housing 706, a diaphragm 701 assembled in the housing 706, a light guide plate 702, a light reflecting sheet 703 and a metal back plate 704, and a backlight light source 705 corresponding to the diaphragm 701, the light guide plate 702, the light reflecting sheet 703 and the metal back plate 704; the backlight light source 705 is an LED light bar and is disposed on a display back plate (i.e., the metal back plate 704) to form a side-emitting light source. It should be understood that, fig. 20 is only an exemplary display panel, and the specific structure of the display panel may be flexibly set, which is not described herein. The display panel has the advantages of better heat dissipation performance, more LED chips arranged under the same area, smaller black edge and the like.
The foregoing is a further detailed description of embodiments of the invention in connection with the specific embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.

Claims (10)

1. The utility model provides a LED lamp strip, its characterized in that includes the base plate, locates a plurality of LED chips on the base plate, and locate on the base plate will the encapsulation body that LED chip covered, wherein:
the substrate comprises an upper substrate and a lower substrate which are fixed together; the front surface of the upper substrate is provided with a plurality of die bonding areas which are arranged in a unidirectional array, and first metal plating layers which are formed in the die bonding areas, the back surface of the upper substrate is plated with second metal plating layers which correspond to the first metal plating layers, and the upper substrate is also provided with through holes which are used for communicating the first metal plating layers in the die bonding areas with the corresponding second metal plating layers, and metal heat-conducting columns which are filled in the through holes and are used for respectively electrically connecting the corresponding first metal plating layers and the corresponding second metal plating layers;
the LED chips are respectively arranged in the die bonding areas and are respectively and electrically connected with the corresponding first metal plating layers, one lamp bead corresponds to at least one die bonding area, the packaging body is formed on the front surface of the upper substrate, and the LED chips in the die bonding areas are covered;
a third metal plating layer which corresponds to the second metal plating layer and is electrically connected with the second metal plating layer is plated on the front surface of the lower substrate;
The back of the lower substrate is plated with a fourth metal coating corresponding to the third metal coating, the lower substrate is also provided with a blind hole communicated with the corresponding third metal coating and fourth metal coating, and a metal conductive layer formed on the side wall of the blind hole and used for conducting and connecting the corresponding third metal coating and fourth metal coating;
wherein the blind via is cut into two parts and the metal conductive layer of the blind via sidewall forms part of the bond pad.
2. The LED light bar of claim 1, wherein an insulating adhesive layer is disposed between the upper and lower substrates, the second metal plating layer of the upper substrate and the third metal plating layer of the lower substrate partially overlap, and the upper and lower substrates are electrically connected through the overlapping region.
3. The LED light bar of claim 1, wherein an insulating adhesive layer is disposed between the upper and lower substrates, the second metal plating layer of the upper substrate and the third metal plating layer of the lower substrate do not overlap, and a conductive material is further disposed between the upper and lower substrates to form an electrical connection.
4. The LED light bar of claim 3 wherein the conductive material fills in the gap between the second and third metal plating layers.
5. The LED light bar of any one of claims 1-4, wherein the package comprises a luminescence conversion layer disposed on the upper substrate to cover the LED chips in the die bonding regions, and a reflective adhesive layer disposed on the upper substrate to enclose the luminescence conversion layers in the die bonding regions.
6. The LED light bar of claim 5, wherein at least two of the LED chips are disposed in the die bonding region, and at least two of the first metal coatings in the die bonding region share a corresponding one of the second metal coatings.
7. The method of manufacturing an LED light bar according to claim 6, wherein at least two LED chips are disposed in at least one die bonding region, and the reflective adhesive layer is formed between adjacent LED chips in the die bonding region.
8. The LED light bar of claim 1 wherein the first metal coating comprises:
a first copper plating layer, a first nickel plating layer and a first gold plating layer which are sequentially arranged on the front surface of the upper substrate from bottom to top;
and/or the number of the groups of groups,
the fourth metal plating layer includes:
and a second copper plating layer, a second nickel plating layer and a second gold plating layer which are sequentially arranged on the back surface of the lower substrate from bottom to top.
9. The LED light bar of claim 8, wherein the upper substrate is provided with at least three first positioning marks which are not on the same straight line, the lower substrate is provided with second positioning marks which are in one-to-one correspondence with the first positioning marks, and the first positioning marks and the second positioning marks are used for bonding and aligning the upper substrate and the lower substrate.
10. A display panel comprising a display back panel and an LED light bar according to any one of claims 1-9, said LED light bar being arranged on said display back panel to form a side-emitting light source.
CN202310713507.0A 2020-09-28 2020-09-28 LED light bar and display panel Pending CN116682812A (en)

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