CN116666405A - Device structure for testing surface leakage current, preparation method and testing method thereof - Google Patents
Device structure for testing surface leakage current, preparation method and testing method thereof Download PDFInfo
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- CN116666405A CN116666405A CN202310947797.5A CN202310947797A CN116666405A CN 116666405 A CN116666405 A CN 116666405A CN 202310947797 A CN202310947797 A CN 202310947797A CN 116666405 A CN116666405 A CN 116666405A
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- 238000012360 testing method Methods 0.000 title claims abstract description 57
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 53
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000010998 test method Methods 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 230000006641 stabilisation Effects 0.000 claims description 2
- 238000011105 stabilization Methods 0.000 claims description 2
- 238000012512 characterization method Methods 0.000 abstract description 4
- 238000004088 simulation Methods 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
- G01R31/52—Testing for short-circuits, leakage current or ground faults
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/90—Testing, inspecting or checking operation of radiation pyrometers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a device structure for testing surface leakage current, a preparation method and a testing method thereof. Etching the specific area of the infrared material to reach the lower contact layer; depositing a first insulating layer on the surface of the lower contact layer and the surface of the side wall of the boss epitaxial layer structure; depositing a first metal layer on the first insulating layer; depositing a second insulating layer on the first metal layer; and depositing a second metal layer on the second insulating layer. According to the device structure for testing the surface leakage current of the infrared focal plane detector, the preparation method thereof and the testing method for testing the surface leakage current of the infrared focal plane detector, which are disclosed by the embodiment of the invention, the surface leakage current of each row in the pixel area array can be directly tested, simulation and characterization by an auxiliary unit are not needed, and the accuracy and convenience of the surface leakage current test are improved.
Description
Technical Field
The invention relates to the technical field of infrared focal plane detectors, in particular to a device structure for testing surface leakage current, a preparation method and a testing method thereof.
Background
The infrared focal plane detector is an imaging sensor for simultaneously acquiring and processing infrared information, and has wide application in the fields of military and civil use and the like.
In researching the influence of the infrared detector device structural design and the pixel etching and passivation process on the surface leakage current, as shown in fig. 1, the surface leakage current and the body dark current need to be separated from the I-V characteristics of the test units 2 arranged around the pixel area array 10 so as to assist in representing the performance of the pixels 1 in the pixel area array 10. Surface leakage current is a dark current that is related to the device size, whereas the bulk dark current density of the device is independent of size. The following method is generally adopted to separate the surface leakage current and the body dark current of the device: test units 2 of different unit sizes are prepared around the pixel area array 10, and then the dark current and the surface leakage current of the test units are separated through the following formula (1-1):
（1-1），
wherein, the liquid crystal display device comprises a liquid crystal display device,R 0 Aa dark current resistance for the test cell 2;（R 0 A） Bulk is thatR 0 AA body dark current resistance for the test cell 2;Pis the circumference of the test unit;Ais the upper area of the test unit;ρ Surface to test the sidewall resistivity of the cell.
The dark current calculation of the existing detector pixels is carried out by carrying out auxiliary simulation characterization through test units around the area array, so that the surface leakage current of the actual pixels in the area array cannot be tested, and the distance between the surface leakage current of the actual pixels in the area array and the surface leakage current of the actual pixels in the test area array is still kept.
The present invention has been made in an effort to solve the above problems, and provides a device structure for testing surface leakage current, a method of manufacturing the same, and a method of testing the same.
Disclosure of Invention
The present invention seeks to provide a device structure for testing surface leakage current, and a method of making and testing the same.
The first aspect of the present invention provides a method for manufacturing a device structure for testing a surface leakage current of an infrared focal plane detector, comprising: etching the specific region of the infrared material to the depth reaching the lower contact layer, so that a part of the lower contact layer is exposed outside, and simultaneously forming a plurality of boss epitaxial layer structures on the lower contact layer, wherein the boss epitaxial layer structures form matrix distribution so as to form an area array pixel; depositing a first insulating layer on the surface of the lower contact layer and the surface of the side wall of the boss epitaxial layer structure; depositing a first metal layer on the first insulating layer; depositing a second insulating layer on the first metal layer; and depositing a second metal layer on the second insulating layer.
Further, the etching of the specific region of the infrared material adopts an inductively coupled plasma method.
Further, the first insulating layer and the second insulating layer are silicon oxide, silicon nitride and/or aluminum oxide with the thickness of 100 nm-300 nm.
Further, the first metal layer and the second metal layer are titanium or gold with the thickness of 50 nm-200 nm.
Further, the first insulating layer and the second insulating layer are deposited by a plasma chemical enhanced vapor deposition method.
Further, the first metal layer and the second metal layer are deposited by an electron beam evaporation method.
In a second aspect, the present invention provides a device structure for testing the surface leakage current of an infrared focal plane detector, which is prepared by the preparation method of the device structure for testing the surface leakage current of an infrared focal plane detector according to the first aspect.
A third aspect of the present invention provides a testing method for testing a surface leakage current of an infrared focal plane detector, using the device structure for testing a surface leakage current of an infrared focal plane detector according to the foregoing second aspect, comprising: for matrix-distributed area array pixels comprising N (N is a positive integer), respectively measuring capacitance voltage U between a first metal layer and a second metal layer of each row of pixels in the first row of pixels to the N row of pixels; according to the formula
，/>，/>，
Calculating the surface leakage current of the infrared focal plane detector, wherein C is the capacitance between the first metal layer and the second metal layer, epsilon is the dielectric constant of the second insulating layer, and S is the overlapping area between the first metal layer and the second metal layer; d is the film thickness of the second insulating layer, U is the capacitance voltage between the first metal layer and the second metal layer, Q is the surface leakage quantity of the row of pixels, t is the time required from the start of the operation of the device to the stabilization of the capacitance voltage, and I is the surface leakage current of the row of pixels.
According to the device structure for testing the surface leakage current of the infrared focal plane detector, the preparation method thereof and the testing method for testing the surface leakage current of the infrared focal plane detector, the surface leakage current of each row in the pixel area array can be directly tested, simulation and characterization by an auxiliary unit are not needed, and the accuracy and convenience of the surface leakage current test are improved.
Drawings
Fig. 1 is a schematic top view of a prior art test method for testing the surface leakage current of an infrared focal plane detector.
Fig. 2 is a schematic diagram of the etched lower contact layer and mesa epitaxial layer structure.
Fig. 3 is a schematic cross-sectional view of a device structure for testing the surface leakage current of an infrared focal plane detector according to an embodiment of the present invention.
Fig. 4 is a schematic top view of a device structure for testing the surface leakage current of an infrared focal plane detector according to an embodiment of the present invention.
Fig. 5 is a schematic top view of a method for testing leakage current on an infrared focal plane detector according to an embodiment of the invention.
Reference numerals:
1: a pixel; 10: a pixel area array; 2: a test unit; 11: a lower contact layer; 12: a boss epitaxial layer structure;
31: a first insulating layer; 41: a first metal layer; 32: a second insulating layer; 42: a second metal layer.
Detailed Description
For a further understanding of the objects, construction, features, and functions of the invention, reference should be made to the following detailed description of the preferred embodiments.
As shown in fig. 2 to 4, an embodiment of the first aspect of the present invention provides a method for manufacturing a device structure for testing a surface leakage current of an infrared focal plane detector, including: etching the specific region of the infrared material to the depth reaching the lower contact layer, so that a part of the lower contact layer is exposed outside, and simultaneously forming a plurality of boss epitaxial layer structures on the lower contact layer, wherein the boss epitaxial layer structures form matrix distribution so as to form an area array pixel; depositing a first insulating layer on the surface of the lower contact layer and the surface of the side wall of the boss epitaxial layer structure; depositing a first metal layer on the first insulating layer; depositing a second insulating layer on the first metal layer; and depositing a second metal layer on the second insulating layer.
As shown in fig. 2, a specific region of the infrared material is etched to a depth of the lower contact layer 11 such that a portion of the lower contact layer 11 is exposed while a plurality of boss epitaxial layer structures 12 are formed on the lower contact layer 11, the plurality of boss epitaxial layer structures being distributed in a matrix form to form an area array pixel. The etching of specific areas of the infrared material may be performed using inductively coupled plasma.
As shown in fig. 3 and 4, a first insulating layer 31 is deposited on the surface of the lower contact layer 11 and the sidewall surface of the mesa epitaxial layer structure 12; depositing a first metal layer 41 on the first insulating layer 31; depositing a second insulating layer 32 on the first metal layer 41; and depositing a second metal layer 42 on the second insulating layer 32. The first insulating layer 31 and the second insulating layer 32 are silicon oxide, silicon nitride and/or aluminum oxide (SiO) with a thickness of 100nm to 300nm x /SiN x /AlO x ) Specifically, the silicon oxide may be SiO 2 The silicon nitride may be Si 3 N 4 The aluminum oxide may be Al 2 O 3 . The first insulating layer 31 and the second insulating layer 32 may be deposited using a plasma chemical enhanced vapor deposition method. The first metal layer 41 and the second metal layer 42 are titanium or gold with a thickness of 50nm to 200 nm. First metal layer 41 and second metal layer 42 may be deposited using electron beam evaporation.
An embodiment of the second aspect of the present invention provides a device structure for testing surface leakage current of an infrared focal plane detector, as shown in fig. 3 and fig. 4, which is prepared by a method for preparing a device structure for testing surface leakage current of an infrared focal plane detector according to the embodiment of the first aspect.
An embodiment of the third aspect of the present invention provides a testing method for testing a surface leakage current of an infrared focal plane detector, which uses a device structure for testing a surface leakage current of an infrared focal plane detector according to the embodiment of the second aspect (as shown in fig. 3 and 4), including:
for matrix-distributed area array pixels comprising N (N is a positive integer), respectively measuring capacitance voltage U between a first metal layer and a second metal layer of each row of pixels in the first row of pixels to the N row of pixels;
according to the formula
（1-2），
（1-3），
（1-4），
Can be deduced
（1-5），
The surface leakage current of the infrared focal plane detector can then be calculated, wherein,
c is the capacitance between the first metal layer and the second metal layer,
epsilon is the dielectric constant of the second insulating layer,
s is the overlap area between the first metal layer and the second metal layer,
d is the film thickness of the second insulating layer,
u is the capacitance voltage between the first metal layer and the second metal layer,
q is the surface leakage of the row of picture elements,
t is the time required for the device to start operating until the capacitor voltage stabilizes,
i is the surface leakage current of the row of picture elements.
According to the device structure for testing the surface leakage current of the infrared focal plane detector, the preparation method thereof and the testing method for testing the surface leakage current of the infrared focal plane detector, which are disclosed by the embodiment of the invention, the surface leakage current of each row in the pixel area array can be directly tested, simulation and characterization by an auxiliary unit are not needed, and the accuracy and convenience of the surface leakage current test are improved.
In the description of the present invention, it should be understood that the terms "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer" orientation or positional relationship are merely for convenience of description and to simplify the description, but do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the invention.
The invention has been described with respect to the above-described embodiments, however, the above-described embodiments are merely examples of practicing the invention. It should be noted that the disclosed embodiments do not limit the scope of the invention. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Claims (8)
1. A preparation method of a device structure for testing surface leakage current of an infrared focal plane detector comprises the following steps:
etching the specific region of the infrared material to the depth reaching the lower contact layer, so that a part of the lower contact layer is exposed outside, and simultaneously forming a plurality of boss epitaxial layer structures on the lower contact layer, wherein the boss epitaxial layer structures form matrix distribution so as to form an area array pixel;
depositing a first insulating layer on the surface of the lower contact layer and the surface of the side wall of the boss epitaxial layer structure;
depositing a first metal layer on the first insulating layer;
depositing a second insulating layer on the first metal layer; and
a second metal layer is deposited over the second insulating layer.
2. The method for manufacturing a device structure for testing a surface leakage current of an infrared focal plane detector according to claim 1, wherein the etching of the specific region of the infrared material is performed by an inductively coupled plasma method.
3. The method for manufacturing a device structure for testing a surface leakage current of an infrared focal plane detector according to claim 1, wherein the first insulating layer and the second insulating layer areSiO with thickness of 100 nm-300 nm 2 、Si 3 N 4 And/or Al 2 O 3 。
4. The method for manufacturing a device structure for testing surface leakage current of an infrared focal plane detector according to claim 1, wherein the first metal layer and the second metal layer are titanium or gold with a thickness of 50 nm-200 nm.
5. The method of claim 1, wherein the first insulating layer and the second insulating layer are deposited by a plasma chemical enhanced vapor deposition method.
6. The method of claim 1, wherein the first metal layer and the second metal layer are deposited by electron beam evaporation.
7. A device structure for testing the surface leakage current of an infrared focal plane detector, which is prepared by the preparation method of the device structure for testing the surface leakage current of an infrared focal plane detector according to claim 1.
8. A test method for testing the surface leakage current of an infrared focal plane detector using the device structure for testing the surface leakage current of an infrared focal plane detector according to claim 7, comprising:
for matrix-distributed area array pixels comprising N (N is a positive integer), respectively measuring capacitance voltage U between a first metal layer and a second metal layer of each row of pixels in the first row of pixels to the N row of pixels;
according to the formula
，/>，/>
Calculating the surface leakage current of the infrared focal plane detector,
wherein C is the capacitance between the first metal layer and the second metal layer, epsilon is the dielectric constant of the second insulating layer, and S is the overlapping area between the first metal layer and the second metal layer; d is the film thickness of the second insulating layer, U is the capacitance voltage between the first metal layer and the second metal layer, Q is the surface leakage quantity of the row of pixels, t is the time required from the start of the operation of the device to the stabilization of the capacitance voltage, and I is the surface leakage current of the row of pixels.
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