CN116648792A - Flexible solar panel and photovoltaic device, and production methods and systems thereof - Google Patents

Abstract

A flexible and mechanically resilient Photovoltaic (PV) cell formed from a single semiconductor wafer. The PV cell includes a non-overrunning pit or light emitting gap that penetrates upward from the back-to-front surface but does not reach the front-to-front surface. The pits segment the wafer into micro-sub-areas and provide mechanical spring back and mechanical shock absorption. A set of wires on each side of the PV cell; one group collects negative charges and the other group collects positive charges. The wires are embedded in a flexible transparent adhesive plastic foil. Alternatively, a bifacial PV cell is also provided, as well as methods and systems for producing such a PV cell.

Description

Flexible solar panel and photovoltaic device, and production methods and systems thereof

Cross Reference to Related Applications

This patent application claims priority and benefit from (i) U.S. provisional patent application No. 63/088535 filed on 7/10/2020, the entire contents of which are incorporated herein by reference; and (ii) priority and equity of U.S. patent application Ser. No. 17/355867 filed on 6/22 of 2021, the entire contents of which are incorporated herein by reference.

Technical Field

Some embodiments relate to the field of solar panels and Photovoltaic (PV) devices.

Background

The Photovoltaic (PV) effect is the generation of voltages and currents in materials when exposed to light. Which is a physical and chemical phenomenon.

The PV effect has been used to generate electricity from sunlight. For example, PV solar panels absorb sunlight or light energy or photons and produce electricity through the PV effect.

Disclosure of Invention

Some embodiments provide a flexible and mechanically resilient Photovoltaic (PV) cell formed from a single semiconductor wafer. The PV cell includes a non-overrunning pit or light emitting gap that penetrates upward from the back-to-front surface but does not reach the front-to-front surface. The pits segment the wafer into micro-sub-areas and provide mechanical spring back and mechanical shock absorption. A set of wires on each side of the PV cell; one group collects negative charges and the other group collects positive charges. The wires are embedded in a flexible transparent adhesive plastic foil. Alternatively, a bifacial PV cell is also provided, as well as methods and systems for producing such a PV cell.

Some embodiments may provide other and/or additional benefits and/or advantages.

Drawings

Fig. 1A is a functional level symbology of an example of a system for toughening a semiconductor substrate or wafer (wafer and substrate are used interchangeably herein) according to some embodiments.

Fig. 1B is a flowchart including steps of a possible sequence of a method of toughening a semiconductor substrate according to some embodiments.

Fig. 2A is a side view illustration of a pick-and-place process by which a semiconductor substrate (the figure refers to a PV wafer as a specific example) is placed on a support sheet as part of some embodiments.

Fig. 2B is a top view illustration of a pick-and-place process by which a semiconductor substrate (the figure refers to a PV wafer as a specific example) is placed on a support sheet as part of some embodiments.

Fig. 3A-3C include a series of top view illustrations of a semiconductor substrate assembly positioned on a support sheet and separated or singulated by a physical scoring, slotting, or dicing (dicing) process, performed by an automated cutter at a dicing station, according to some embodiments.

Fig. 4A-4C include a series of side view illustrations of a semiconductor substrate assembly positioned on a support sheet and fully singulated according to a multi-step singulation embodiment; wherein a combination of two-dimensional partial physical scribe or scribe (dicing) and physical deformation is used to fully singulate the substrate in a predetermined pattern.

Fig. 4D-4F illustrate a series of top views of a semiconductor substrate as it is transformed by a separation/singulation/grooving process, according to some embodiments.

Fig. 5A is a functional level diagram of beam-based semiconductor separation, according to some embodiments.

Fig. 5B and 5C each illustrate a series of top views of a semiconductor substrate as it is transformed by an exemplary separation/singulation/grooving process in accordance with some beam-based embodiments.

Fig. 5D is a perspective view of a semiconductor substrate body that has been separated, grooved, and/or singulated according to some embodiments; according to some embodiments, the semiconductor substrate body comprises an electrical conductor mesh, component or arrangement under the gap or pocket formed by singulation.

Fig. 5E is a side cross-sectional view of several alternative semiconductor body gap forming geometries that may be produced and/or used in accordance with some embodiments.

Fig. 6A and 6B are bottom views of a semiconductor body according to a PV device embodiment, wherein the interdigitated positive and negative electrodes protrude from the bottom of the substrate body; and wherein different separation/cutting modes are used depending on the placement and arrangement of the negative electrodes relative to the respective positive electrodes.

FIG. 7 is a functional level diagram of beam-based semiconductor separation according to some embodiments; wherein a reactive species is provided during beam separation, wherein the reactive species can react with portions of the semiconductor body exposed to the separator beam as the reactive species can be excited by the beam.

Fig. 8A is a perspective view of a semiconductor substrate body singulated according to some embodiments and including gap filler (or pit filler) in the form of a coating on the gap sidewalls, which may coat only the gap sidewalls or may fill up to 100% of the gap volume.

Fig. 8B is a side cross-sectional view of several alternative semiconductor body gap formation geometries that may be produced and/or used in accordance with some embodiments, the geometries further including a coating layer.

9A-9F include three sets of top and side illustrations of a semiconductor substrate/wafer body, wherein each set illustrates a transition of the semiconductor substrate/wafer body from an un-toughened configuration to each of three separate toughened configurations in accordance with some embodiments; note that the gaps and/or wafer bodies and sections are not drawn to scale.

Fig. 10A is a functional block level illustration of a Photovoltaic (PV) related embodiment in which a singulated/singulated substrate is encapsulated in top and bottom EVA films, optionally on a support sheet, then encapsulated in top and bottom polymer sheets, optionally with optics formed (e.g., embossed, etched, machined) on the top sheet.

Fig. 10B is a side view illustration of a transparent polymer embossing assembly providing micro-lenses or mini-lenses on a top sheet covering toughened PV cells according to some embodiments.

Fig. 10C is a side view illustration of a micro PV cell array toughened, packaged, and covered with a micro-lens embossed top sheet according to some embodiments; an embodiment is shown in which asymmetric concentric microlenses may be used to correspond to the angle of solar radiation.

Fig. 11 is a flow chart of a method of producing a flexible and/or crimpable and/or mechanically resilient PV module or PV device or solar panel according to some example embodiments.

Fig. 12A-12D are illustrations of components or portions of a flexible and mechanically resilient solar panel or PV device according to some example embodiments.

Fig. 13 is an illustration of another component or portion of a flexible and mechanically resilient solar panel or PV device according to some example embodiments.

Fig. 14 is an illustration of a series of interconnected or continuous sub-regions forming a flexible and mechanically resilient elongate solar cell or PV device, according to some embodiments.

Fig. 15 is an illustration of components of a flexible and mechanically resilient solar panel or PV device according to some example embodiments.

Fig. 16A is an enlarged illustration of a portion of a flexible and mechanically resilient solar panel or PV device according to some example embodiments.

Fig. 16B is an enlarged illustration of a portion of another flexible and mechanically resilient solar panel or PV device according to some example embodiments.

For simplicity and clarity of illustration, elements illustrated in the figures have not necessarily been drawn to scale. For example, the dimensions of some of the elements may be exaggerated relative to other elements for clarity. Further, where considered appropriate, reference numerals may be repeated among the figures to indicate corresponding or analogous elements.

Detailed Description

In some embodiments, an apparatus includes a segmented Photovoltaic (PV) cell array having a plurality of micro PV cells. The array of PV cells includes one of: (I) A single wafer segmented via a pit, (II) a portion of a single wafer segmented via a pit, (III) a group of interconnected wafers segmented via a pit. The wafer is one of the following: (i) A composite metallized wafer having an underlying metallization layer, wherein each pit penetrates the entire non-metallization layer of the wafer, but does not penetrate the underlying metallization layer; (ii) A semiconductor wafer wherein each pit penetrates no more than 99% of the entire depth of the semiconductor wafer. Each pocket forms a physical depression separation between two adjacent micro PV cells that are still interconnected with each other, but only at some, but not all, of the heights of the two adjacent micro PV cells. The micro PV cells are mechanically and electrically connected to each other.

Semiconductor devices are built on semiconductor substrates by processing the material of the substrate body in various ways including etching, doping, reactive coating, and surface deposition. Various devices such as transistors, integrated circuits, processors, and Photovoltaic (PV) cells may be produced on a semiconductor substrate, which may include all or a portion of a semiconductor wafer as a substrate source.

Semiconductor wafers and substrates (hereinafter, the terms are used interchangeably) are typically made of brittle crystal type materials (e.g., silicon, gallium arsenide, etc.). Devices made from these materials are therefore generally prone to breakage when subjected to stress or when subjected to physical impact. These disadvantages require extensive packaging and protection and are susceptible to breakage during handling, manufacturing and transportation. This is more evident in full wafer scale applications (e.g., PV) where the semiconductor substrate is typically 5 "to 6" wide. Accordingly, there is a need in the semiconductor arts for toughened and/or flexible semiconductor wafers having enhanced physical toughness characteristics and methods of producing the same. There is a need in the art of PV production for toughened and/or flexible semiconductor PV substrates and devices having enhanced physical toughness characteristics and methods of producing the same.

Solar cells or Photovoltaic (PV) cells are electrical devices that directly convert the energy of light or photons into electrical energy by the photovoltaic effect, a physical and chemical phenomenon. The most commonly used solar cells are configured as large area p-n junctions made of silicon. Other possible solar cell types are thin films such as CdTe or CIGS, organic solar cells, dye sensitized solar cells, perovskite solar cells, quantum dot solar cells, etc. The solar cell operates according to the following principle: (1) Photons in sunlight strike the solar panel and are absorbed by semiconductor materials such as silicon; (2) Electrons are excited by photons from the current molecular/atomic orbitals in the semiconductor material; (3) Once excited, the electrons can dissipate energy as heat and return to their orbit or through the cell until it reaches the electrode; (4) An electrical current flows through the material to offset the potential and the current is captured. The chemical bonding of the cell material is critical to the operation of this process, and silicon is typically used for two regions, one doped with boron and the other doped with phosphorus. These regions have different chemical charges and all then drive an electron current and direct it to the relevant electrode.

Solar cell arrays convert solar energy into usable amounts of Direct Current (DC) electricity. Individual solar cell devices may be combined to form a module, also referred to as a solar panel. In some cases, the inverter may convert DC current/power from the board to Alternating Current (AC).

As global initiatives are being raised for alternatives to fossil fuels, the demand for renewable energy sources, in particular solar energy, is continually rising. The use of solar energy is becoming one of the most promising alternatives to renewable energy sources, with an annual increase in supply of about 30%. The future of solar energy is expected to provide a wealth of available electrical energy at competitive costs compared to fossil fuels.

Because current silicon solar modules, panels are heavy and rigid, their use is limited to applications where weight, shape, or accessibility are constrained. In addition, today's PV modules are also expensive to transport and install. Any length of flexible solar panel on a roll will solve many of these problems. However, the current most advanced solutions for providing flexible PV panels are still under development, and the industrial scale production of such sheets is extremely expensive. Furthermore, today's flex board solutions are not durable. Regardless of cost, most flexible PV panels available today do not have sufficient flexibility for winding.

Thus, there is a need for a low cost and improved flexible solar power generation surface. There is also a need for flexible PV modules with improved durability.

As used herein, the term "gap" may include, for example, cavities or tunnels or pits, or grooves or elongated grooves, or recessed cavities between islands or between island-like protrusions, or recessed or elongated depressions, or other types of spatial separation or depressions or grooves or pockets or pits between objects or walls; which does not necessarily result in the objects being completely discrete or separated from each other. For example, a "gap" may be a depression or cavity between two adjacent micro PV cells, which cells may still be mechanically and/or electrically interconnected to each other. As used herein, the terms "gap" and "pit" are interchangeable. As used herein, the term "dimple" may include any suitable recess or depression, which is not necessarily circular or annular; and may include depressions, recesses or depressions, shaped as inverted trapezoidal prisms or inverted elongated trapezoidal prisms (e.g., inverted, with the larger plate facing upward and the smaller plate facing downward), inverted prisms or polyhedra having side plates that are generally V-shaped or U-shaped or triangular, inverted elongated pyramids, a series or set or batch of such depressions or depressions, or the like; and such depressions or grooves or pockets or depressions may have a flat surface, or a planar surface, or a non-planar surface, or a curved surface, or an irregular surface, or an inclined surface, or a combination of two or more such (or other) types of surfaces and/or sidewalls.

Some embodiments include methods, apparatus, and materials for producing toughened semiconductor substrates. Semiconductor substrates and semiconductor devices produced from such substrates may exhibit toughened physical properties, making them more suitable for use in mechanically challenging or stressed applications and environments. Semiconductor substrates and semiconductor devices produced from such substrates may exhibit toughened thermal properties, making them more suitable for use in environmentally challenging applications. Semiconductor substrates and semiconductor devices produced from such substrates may exhibit sufficient toughening characteristics to allow packaging in non-rigid and lightweight packages. Semiconductor substrates and semiconductor devices produced from such substrates exhibit sufficient flexibility on a scale suitable to permit rolling up during shipment and/or permitting non-destructive deformation during deployment on uneven surfaces.

Embodiments may include a toughened semiconductor substrate comprising a substrate body composed of a semiconductor material and having a top surface, a bottom surface, and side surfaces. The semiconductor body may have at least one specially configured gap therein, wherein the specially configured gap may be configured by separating segments of the body from the top, bottom, or both (e.g., cracking, breaking, etc.), or by removing material from the body from the top, bottom, or both (e.g., sawing, etching, cutting, laser cutting, scribing, milling, etc.). The specially configured gap according to an embodiment may be at least 0.01 millimeters deep. The specially configured gaps according to embodiments may have varying depths and/or varying widths. The gap may act as a crack, microcrack, and/or nanocrack propagation inhibitor.

According to an embodiment, at least some of the semiconductor body gaps may comprise gap fillers within the at least one specifically provided gap. The gap filler may be at least partially composed of a material possessing mechanical or impact absorbing, compressibility and/or stretchability and/or flexibility and/or toughening properties. Thus, some gap filler materials may also be referred to as toughening agents. The gap filler may be at least partially composed of a material possessing heat absorption and/or heat dissipation properties. The gap filler may be at least partially composed of a material possessing electrically insulating properties. According to some embodiments, the gap filler may be reactively grown within the respective gap, while according to other embodiments, the gap filler may be deposited within the respective gap. The gap filler may form a coating on the sidewalls of the respective gap. The gap filler may form a coating on the shoulder of the sidewall of the respective gap and may form a continuous layer at the level of the shoulder.

The gap filler according to some embodiments may be composed of at least one material selected from the group consisting of: (a) a polymer; (b) a resin; (c) amorphous silicon; (d) glass; (e) a metal; (f) carbon; (g) oxygen; (h) a monomer; (i) a second semiconductor; (j) an oligomer; (k) reaction systems (e.g., monomers and photoinitiators); (l) EVA; (m) PVDF; (n) silicone; and (o) combinations of two or more of the foregoing. The gap filler may be homogeneous or a heterogeneous system comprising at least one matrix material (e.g. polymer) and at least one additive (e.g. discrete domains of a second softer polymer).

According to an embodiment, the gap filler may be reactively generated inside the respective gap. According to a first example, a reactive chemical such as oxygen or ammonia may be introduced during laser cutting or chemical etching of the gap, and a reaction between the reactive chemical and the material of the gap sidewall may form a coating on the sidewall. The coating may have a varying thickness and may in some cases expand to push the sidewalls apart. According to other examples, a reactive mixture of chemicals may be introduced into the gap that has been set/created and the reactive mixture may be allowed to react within the gap, filling the gap with a reaction product that may in some cases physically push the gap sidewalls apart.

According to a further embodiment, the gap filler may comprise a set of materials deposited as discrete layers within or across the gap. According to some embodiments, different layers of the deposited discrete layers may have different characteristics and perform different toughening functions.

The gap filler material may include polymer/oligomer/monomer systems for mechanical toughening—eva, HIPS (high impact polystyrene), thermoplastic elastomers (TPE), block copolymers (di-, tri-, multi-and random copolymers) of polystyrene-polybutadiene and/or polystyrene-polyisoprene, polybutadiene neoprene, EPDM and other rubbers/elastomers, and flexible materials.

Gap filler materials for thermal and electrical conductivity may include or comprise carbon fibers, metal powders, nanoparticles, nanofibers, filings, and/or fibers including, but not limited to, iron, copper, silver, aluminum, and/or mixtures, and/or alloys of the above distributed in polymers, ceramics, or other matrices, as well as conductive polymers, carbon Nanotubes (CNTs), graphene.

The gap filler providing a reactive mixture that swells upon reaction includes a mixture such as a polyisocyanate and a polyol with or without water to produce a foamed polyurethane. Alternative blowing agents (such as azodicarbonamide) may also be added to create foam, resulting in expansion and volume increase of the material within the interstices, which increases the width of the interstices.

According to an embodiment, at least a portion of the gap filling material may be an anisotropic material. According to an exemplary embodiment, anisotropic particles of fibers may be affixed in a particular orientation relative to the top or bottom surface of the bulk matrix and conductive polymer, CNT, or graphene suspended in a bonding material (such as a polymer). The anisotropic particles (such as microfibers) may be aligned in one direction or another with respect to the top or bottom surface or different specific planes in the substrate before curing the filler material by using a magnetic or electric field. Such a mixture may be used to physically and thermally toughen a substrate. Particles that are isotropic or anisotropic in nature may be present below or above the percolation threshold.

The anisotropic gap filling material may impart anisotropic properties to the semiconductor substrate/wafer. The filler material may contain anisotropic particles (e.g., microfibers) that may be aligned or oriented using an external force field (such as a magnetic or electric field). If these anisotropic particles are embedded in a filler matrix (such as a crosslinkable polymer, monomer or oligomer) that can be "set", these properties will remain permanently preferentially oriented even after the external alignment force field is turned off.

According to an embodiment, the semiconductor body may consist of at least one semiconductor material selected from the group consisting of: silicon, silicon dioxide, aluminum oxide, sapphire, germanium, gallium arsenide (GaAs), cdTe, organic/inorganic perovskite-based materials, CIGS (CuGaInS/Se), and indium phosphide (InP). The semiconductor body may be configured to provide a semiconductor device selected from the group consisting of: photovoltaic cells, light emitting diodes, transistors, power transistors, integrated circuits, very large scale integrated circuits, and microelectromechanical systems (MEMS).

According to an embodiment, the specifically configured gap may be created by physically, chemically, using a laser, or otherwise removing material from the substrate body. The specially provided gaps may extend across at least the top surface of the substrate body in a single line or in a pattern consisting of an array of lines or other shapes. The specifically disposed gaps may actually extend across each of the top and bottom surfaces of the substrate body, forming separate and distinct gap patterns on both the top and bottom surfaces of the substrate. The singulated patterns or drawings on top of the wafer may or may not coincide with the singulated patterns/drawings on the bottom of the wafer. Gap fillers may be introduced into some or all of the gaps on either side. In the case of singulating successive layers of a semiconductor substrate or wafer from both sides, some material may remain through the intermediate layer of the wafer (not necessarily at half thickness). According to a further embodiment, the gap patterns on different sides of the substrate may be filled with different gap filling materials. While according to still further embodiments, some or all of the gap pattern on either or both surfaces may be left blank.

The material used to fill the gap on the bottom of the wafer may be the same material used to fill the gap on the top of the substrate/wafer, or may be a different material. The material introduced into the gap may partially fill the gap in a vertical manner (i.e., fill the bottom of the gap), may completely fill the gap (i.e., flush with the top surface adjacent the gap), or may overflow and partially or completely cover the top surface adjacent the gap.

According to an embodiment, the specifically arranged gap may be created by removing material from the substrate body all the way through the semiconductor body from the top surface to the bottom surface. The specially arranged gaps, which pass entirely from the top surface to the bottom surface, may extend across the top or bottom surface of the substrate body in a single line or in a pattern comprising an array of lines or other shapes. According to such embodiments, the semiconductor substrate may be fully singulated or singulated into pieces. According to such fully singulated embodiments, gap filling material and/or an external film located over the top surface, over the bottom surface, or over both surfaces may be used to maintain the physical integrity of the substrate. According to further embodiments, one or more electrical conductors connecting terminals on the singulated substrate pieces to each other may be used to maintain the electrical function of the semiconductor substrate.

Embodiments may include Photovoltaic (PV) cells, arrays of PV cells, and methods of producing the same. Further embodiments may include PV cells and arrays of PV cells having enhanced toughness and/or durability and/or flexibility and methods of producing the same. According to embodiments, PV cells having enhanced toughness and/or durability and/or flexibility may be produced by partially or completely separating segments of material within a semiconductor substrate or wafer from which the PV cells are produced, either before or after the PV cells are produced from the semiconductor substrate and introducing a toughening agent or material (such as a flexible polymer, resin, or other flexible impurity) between the separated wafers or substrate segments (the terms "wafer" and "substrate" are used interchangeably herein or above). The toughening material may be a composite material deposited as a single layer or multiple layers within the interstices. Depending on the implementation of the multi-layer gap filler, different layers may exhibit different characteristics and may perform different functions within the enhanced wafer. Some gap filling materials may provide enhanced thermal conduction functions, for example, by including and/or introducing thermally conductive additives in the wafer gap. Any of the gap filling materials previously mentioned are suitable for use in PV cell embodiments. Any of the substrate bulk materials previously mentioned are suitable for use in PV cell embodiments.

According to some embodiments, the material of the wafer or substrate (the terms used interchangeably) may be separated by breaking, with little or no material being removed or otherwise lost from the wafer. According to other embodiments, segments of the PV cell wafer may be separated by dicing, scribing, etching, dicing, and/or any other method now known or to be devised in the future, with some of the wafer material removed. The removal of the wafer material may be complete from the top surface to the bottom surface of the wafer, or partial, leaving some wafer material on top or bottom of the wafer. The separation of the full or partial wafer segments may be performed from one end of the wafer to the other, with or without material removed, and/or may be performed multiple times to form separate patterns. According to a further embodiment, the separation pattern may be selected to correspond to a particular orientation relative to the crystal lattice of the separated wafer.

Depending on the implementation, the flexible material may be deposited in the gap, with or without material removed, whether the substrate or wafer segment gap between the wafer segments of the PV cell wafer is complete or partial. Deposition may optionally include melting, physical spreading, vapor deposition, solvent assisted deposition, chemical Bath Deposition (CBD), printing, or other suitable methods for depositing materials onto a semiconductor wafer. Depositing the material in the gap may be performed simultaneously with another process in which the filler material also acts; for example, the filler material may also be used as an adhesive for a top sheet or layer laminated to a semiconductor wafer. For example, some embodiments may use EVA as a filler material that simultaneously acts as an adhesive layer to the top sheet of ETFE. In this example, EVA may be incorporated in the form of a film that liquefies at a given temperature and pressure, penetrating the gap, while forming an encapsulating film that covers the semiconductor wafer, also serving as an adhesive to the top sheet described above. The gap filler material may be comprised of flexible (compressible and stretchable) polymers as previously described. The gap filler material may exhibit good mechanical shock absorbing and/or dissipating characteristics. In some embodiments, the gap fill material may be deposited as part of a top or bottom lamination process of the respective PV cell wafer.

According to an embodiment, the PV cell may be mechanically toughened by segmenting a semiconductor body consisting of a semiconductor substrate/wafer into miniature PV cells. Micro PV cells can be formed by fully segmenting the PV cell body in a repeating pattern that forms the micro PV cells. The repeating pattern may consist of one or more sets of cut/score lines that form discrete functional areas. Each micro PV cell can be electrically connected to other micro PV cells to form an array of micro PV cells; the collection or array of micro PV cells working together can perform substantially the same function as the original (non-segmented) PV cells. Depositing gap filling material between the sidewalls of the micro PV cells can produce toughened PV cells having similar electrical properties that do not significantly differ from the electrical properties of the original PV cell prior to material separation, but have significantly better toughness and flexibility properties when compared to the original PV cell. The addition of toughening materials may increase, decrease, or not affect the performance of the original PV cell.

According to embodiments, one or more micro PV cells may be provided having dimensions (e.g., length, width, and thickness) in the millimeter range. The width of the one or more micro PV cells may range from a fraction of a millimeter to a few centimeters. The top and bottom surfaces of the micro PV cells may be provided in a variety of shapes, including: triangle, circle, square, rectangle, hexagon, and any other suitable polygon. According to embodiments, the micro PV cell may have dimensions and geometries (i.e., length, shape, width, and angle) selected to allow the maximum bending moment to be at least 500% or at least 600% of the maximum bending moment of the semiconductor substrate prior to toughening.

Embodiments may include various PV array applications, which are: (1) weight sensitivity, (2) involving "high" or repeated mechanical loading, and/or (3) may require the use of irregularly shaped surfaces whose contours act as mechanical supports for the PV array. According to some embodiments, micro PV cells may be laminated and used as sails. According to further embodiments, the array may be attached to a side of a building or temporary structure (e.g., tent). The array may be placed on a walkway or roadway. According to some embodiments, micro PV cells may be dispersed at low density over a large area of transparent material (such as glass or plexiglas) to provide a relatively transparent building or automotive enclosure that also generates electricity. According to further embodiments, the micro PV cell array may be oriented in a vertical direction and placed behind a structured prism, pyramid array or lenticular lens to provide power from sunlight arriving above and to present/project a billboard image to an observer passing below.

According to further embodiments, at least one sidewall or side surface of the micro PV cell according to embodiments may be produced at a non-straight, oblique angle relative to the active surface of the micro PV cell. The sidewalls or side surfaces of the micro PV cells according to embodiments may include one or more coatings of a material that is different from the material of the rest of the cell. According to an embodiment, the coating may be part of a passivation layer on the sidewalls. According to a further embodiment, the sidewall coating may be part of an electrically insulating layer on the sidewall. According to still further embodiments, the coating layer may have additional functionality and may be part of any other type of layer, such as, for example, an anti-reflective layer or the like. According to some embodiments, the coating layer may be formed in situ, for example during dicing or cutting of the sidewalls. The coating may be deposited exclusively or may be formed in other ways, for example by reactions occurring during cutting (e.g. laser cutting) of the side walls in the presence of a reactive gas. According to some embodiments, the presence of reactive gases or other gap filler agents/materials that are intentionally injected and reacted within or around the gap during laser cutting may be specialized.

Micro PV cells according to embodiments may be arranged in interconnected arrays of micro PV cells. The array may be one-dimensional, two-dimensional, or three-dimensional, depending on the implementation presented. According to some one-and two-dimensional embodiments, adjacent micro PV cells within an array of micro PV cells may be spaced apart from each other by a distance, for example, between 0.01 and 2.0 millimeters. The space between the sidewalls of adjacent cells may be empty or may be filled with a gap filling material, which may be a flexible and/or compressible material. The gap filler material may have additional characteristics and may perform additional functions such as, for example, providing electrical insulation for the micro PV cells and/or providing mechanical shock protection. According to further embodiments, a gap filling material filling the gap between adjacent micro PV cells may include an additive to trigger passivation of the exposed silicon sidewalls.

Adjacent micro PV cells can be electrically connected to each other via flexible electrical conductors that can carry positive and negative charges from the cells in parallel or series configurations. Adjacent micro PV cells may share at least one common electrically conductive connector, such as, for example, a positive terminal. The bottom surface of each of two or more adjacent micro PV cells, such as, for example, the respective P-type semiconductor regions of the respective cells, may be connected to the same electrical connector. According to a further embodiment, the shared electrical conductor may be unitary or may otherwise comprise a P-type semiconductor layer with which each of two adjacent cells may form a separate PN junction.

A large number of micro PV cells forming an array may be interconnected by a network of positive and negative conductors. Some micro PV cell arrays according to embodiments may include hundreds, thousands or even millions or billions of micro PV cells arranged in one or two dimensions along a common surface, for example when manufactured on rolls of hundreds to thousands of meters in length. Some embodiments may include micro PV cells arranged in a three-dimensional array, wherein multiple layers of the two-dimensional array are placed or stacked on top of each other, wherein gaps between micro PV cells in an upper layer of the 3D array may allow light to pass through and reach PV cells of a lower region. Such a 3D array configuration may be referred to as a stacked array.

According to further embodiments, different micro PV cell groups within an array of micro PV cells may be interconnected according to different arrangements, wherein some of the cell groups may be interconnected to adjacent cells in parallel and other groups may be interconnected to adjacent cells in series. According to further embodiments, the micro PV cells may be interconnected with one neighboring cell in parallel and simultaneously interconnected with another neighboring cell in series. Various interconnect approaches within the array may provide a combination of voltage boosting due to series interconnects and current collection due to parallel interconnects. During micro PV cell array fabrication, selecting a conductor mesh configuration from many possible combinations may be performed according to rules that aim to customize the array electrical output parameters, such as output voltage and output current for a given power level. One particular application of such array output engineering is to increase the voltage to current ratio for a given power by conductor mesh selection to minimize resistive losses during transmission of PV power generation.

According to some embodiments, micro PV cell arrays may be produced by physically dividing or separating larger PV wafers or cells into smaller adjacent micro PV cells. Processing or mechanical singulation of the PV cells may also be referred to as singulation and may be performed by various processes, including: (a) Mechanical sawing or dicing (typically using a machine called a dicing saw); (b) scribing and breaking; (c) Laser cutting (e.g., using a continuous wave laser or a pulsed laser in the ultraviolet, visible, or infrared range); (d) electron beam cutting; (e) ion beam cutting; (f) wet etching; (g) dry etching; (h) an ultrasonic cutter; (i) milling and (j) Thermo Laser Separation (TLS). Any process for singulating semiconductor material that is currently known or that is to be designed in the future may be suitable for some embodiments.

According to embodiments, some or all of the methods of PV cell singulation may be automated to ensure accuracy and precision in producing miniature PV cells of a desired size. Thus, the dicing saw and/or laser spot width or mask geometry can be selected to correspond to the desired gap size and shape between the micro PV cells. The cutting angle may also be selected to correspond to the desired slope and/or shape of the micro PV cell active surface and sidewalls. The micro PV cells produced by the mechanical dicing saw can be any shape including straight lines, but are typically rectangular or square, but can be other polygons as well. In some cases, the micro PV cells can be made into many other shapes when using a laser or other method. Full-cut laser scribes can produce micro PV cell arrays of various shapes, not just rectilinear.

Singulation or dicing of the PV cells or wafers into micro PV cell arrays may be performed from the wafer or top surface of the PV cells to be resolved into micro PV cell arrays, according to some embodiments. According to further embodiments, singulation or dicing may be performed from the bottom surface of the wafer or PV cells to be resolved into arrays of micro PV cells. The terms singulation, dicing, scribing, and the like as used in the present application may be used interchangeably unless a particular method and/or inherent features thereof are specifically mentioned. According to still further embodiments, singulation or dicing may be performed from the top and bottom of the wafer or PV cell; in this case, the dicing patterns or designs on the top and bottom sides of the wafer may be the same or different. The singulated map or pattern of the PV wafer may be designed according to constraints such as the location of the electrical conductors and the contact points of the system to which the singulated PV wafer is to be attached.

Additional embodiments may include packaging the interconnected micro PV cell array in a material or set of materials. According to an embodiment, a first set of materials placed in contact with the bottom surface of the micro PV cell array may be joined and adhered to a second set of materials placed over the top surface of the PV cell array. The top or bottom material sets may also include or act as gap filler for the spaces between adjacent cells. The material placed over the top of the array where the photoactive surface is located is selected to be sufficiently strong, flexible and transparent to the relevant wavelengths in solar radiation to produce a strong, durable, flexible, conversion efficient and easy to install PV sheet or product. The material placed under the bottom surface of the micro PV cell array is selected for strength, durability, flexibility, and compatibility with the array material and the top encapsulant material. At least one of the set of materials above or below the array of PV cells may be composed of a material that is stretchable and/or compressible to allow the entire stack to bend to a desired radius. The layers above the PV cell array need to protect the PV microcells from corrosion and mechanical shock (such as hail impacts, heavy loads such as trucks, etc.), and can be insulated from ground even under dry and wet conditions for series cells having high voltages (e.g., 600VDC, 1000VDC, 1500 VDC). The bottom layer may protect the PV microcells from corrosion and mechanical shock (such as hail impacts, heavy loads such as trucks, etc.), and may be insulated from ground for series cells having high voltages (e.g., 600VDC, 1000VDC, 1500 VDC) even under dry and wet conditions.

The process of packaging the micro PV cell array may also be referred to as lamination (typically when the process also includes adhering the PV cell array to a material, typically in sheet or roll form). Lamination of the micro PV array according to an embodiment may include placing under the micro PV array in a corresponding order: (a) a bottom encapsulant film and (b) a backsheet film. Lamination of the micro PV array according to an embodiment may also include placing a top encapsulant film over the micro PV array, followed by a front sheet film. Both encapsulant films may be composed of highly adhesive and malleable materials, optionally having tackiness and ductility when heated. Both the top sheet and the bottom sheet may be composed of durable materials. For photons having wavelengths within the wavelength at which the micro PV array operates (i.e., converts photons to electricity), both the top sheet and the top encapsulant may have low photon attenuation characteristics. In addition to the typical structure described herein consisting of the backsheet, bottom encapsulant, PV cell array, top encapsulant and top sheet, the structure typically also contains elements for electrically connecting the PV cells to each other, for connecting the PV cell arrays to each other, and for electrical connection to an external load, allowing the use of the power generated by the PV cells.

According to embodiments, the top sheet and/or the bottom sheet may be elastic. Either the top sheet or the bottom sheet, or both, may be flexible. Either the top sheet or the bottom sheet, or both, may be compressible. The elasticity of the top sheet, the bottom sheet, or both may provide the windability of the laminated micro PV array. The elasticity of the top sheet, the bottom sheet, or both, may provide for placement on a laminated micro PV array on a top irregular or wavy surface.

According to a further embodiment, the top sheet may include an optical concentrator located over the area where the micro PV cells are located. Each optical concentrator may cover one or more rows of micro PV cells. Each optical concentrator may cover one or more rows of micro PV cells. Each optical concentrator may cover one or more groups of micro PV cells. Alternatively, each optical concentrator may be a micro concentrator and may cover only one micro PV cell. The optical concentrator may be attached to the top sheet before, during or after the lamination process. The optical concentrator may be embossed on the top sheet before, during or after the lamination process. According to some embodiments, the optical concentrator is embossed or pressed onto the top sheet, optionally during the lamination process, by a heated roll with protrusions in the shape of optical connectors. According to other embodiments, the optical concentrator is formed on the top sheet by micromachining, laser ablation, patterned chemical etching, or other processes.

According to some embodiments, singulation and lamination may be performed as part of a continuous process. According to a further embodiment, the formation of the optical concentrator may also be performed during the lamination process. According to alternative embodiments, the different stages of producing the micro PV cell array may be separated into discrete processes.

According to a further embodiment, the electrical conductor mesh may be provided in the form of a conductive backsheet between the support backsheet and the toughening PV cell array (array of micro PV cell arrays). The conductive back-plate may provide for electrically connecting the battery using soldering, conductive adhesive, surface Mount Technology (SMT) epoxy or adhesive or bonding material, circuitry, bus bars, electronics inside the module such as Maximum Power Point Tracking (MPPT) tracking ICs; and methods of producing the same, for example, using laser ablation, conductive decals, soldering, surface Mount Technology (SMT) processes, and the like.

According to some specific embodiments focusing on photovoltaics, methods of processing various configurations of rigid (typically crystalline/polycrystalline cells with a thickness greater than 10 μm and preferably greater than 50 μm) solar cells can be provided to toughen the processed cells and make them more flexible. The treated cells can then be used to produce flexible solar films and rolls of solar film based on these now flexible solar cells in combination with an encapsulant. The method may include producing a long continuous film with modular electrical connections in a roll form at all times.

In order to make rigid/semi-rigid solar cells flexible, pseudo-singulation may be performed on the PV cells by a slotting/dicing/cutting/breaking/cleaving (hereinafter "slotting") stage. If the current collectors of both polarities remain intact and allow current to flow out of the cell, slotting can be performed in similar or larger steps to adjacent current collectors of opposite sign during this stage, with minimal reduction in overall efficiency being expected. The slotting can preferably be performed in the electrically shielded sections of the solar cell in the largest possible way to maintain maximum efficiency.

The distance between the grooves determines the maximum radius of curvature of the film. In a preferred embodiment, the distance between the trenches is equal to the distance between adjacent conductors. In another embodiment, the distance is between 100 μm and 10cm and preferably between 0.5mm and 5 mm.

The kerf left by the slotting process may be minimal and may allow the film to be rolled in only one direction so as not to apply stress when bent inward and not to damage the top of the solar cell. The kerf may have a defined width between 0 and 300% of the height of the solar cell to allow any desired radius of curvature when bending towards the top of the solar cell. Elucidation of the terms: the top of the cell is the side that interacts with solar radiation.

The grooving may be performed perpendicular to the machine direction to allow the film to be wound with a small radius, parallel to the machine direction to allow flexibility in the width direction, or both to allow flexibility in all directions. The slotting may be performed in diagonal, hexagonal or any other pattern to provide the flexibility required for the product. The slotting may be performed in one direction, two directions or more than two directions. The slotting may be performed in different directions with the same or different indices. The slotting index in any given direction may be constant or may be variable.

In some embodiments, grooving may be accomplished by a mechanical saw or by a cluster or group or batch of mechanical saws (e.g., dicing saws). Alternatively, in another embodiment, grooving may be performed by means of "water jets" (high-speed concentrated jets of liquid with or without abrasive particles in the liquid).

In another embodiment, the film may enter a bending space with ridges or other indentations or protrusions that cause a break in one direction in the desired position as shown in fig. 4C, and may cause a break in the other direction by entering the roll system with ridges at the correct index. For example, the PV cells may be pre-weakened mechanically or by laser at specific desired locations. In some embodiments, the wafer will be stressed or grooved in the direction(s) corresponding to the crystal lattice of the semiconductor material, resulting in a "clean" fracture along the crystal plane.

In yet another embodiment, the slotting may be performed by a laser. Preferably, the laser is capable of rastering the pattern according to the speed of the machine (reel) and using sufficient power to perform grooving in a sufficiently deep and fast manner. In another embodiment, the laser beams are separated by, for example, a DOE to perform parallel slotting of between 2 and 1000 sub-beams or more. The laser light may be rasterized and/or split optically or mechanically, e.g. by an SLM or any other beam shaper and/or mechanical head. In further embodiments, more than one laser head may be used to increase throughput, i.e., to perform a greater number of grooves of a given depth, width, shape, angle, and index in a given amount of time.

In one embodiment, a process for producing a product as described herein is illustrated, wherein individual photovoltaic cells are first attached to a continuous flexible support sheet, for example in a "pick-and-place" or dispenser fashion, and the individual photovoltaic cells are electrically connected to each other either directly or by means of individual connection elements. In a variant, the support film or sheet has already had electrical connection elements predisposed in the correct position to electrically connect adjacent photovoltaic elements/solar cells. The process is typically a continuous process fed from a roll of support material having an automated station for placing individual photovoltaic cells and a station for performing electrical contacts. The support sheet with electrically connected photovoltaic elements is then moved to a pseudo singulation (e.g., scribe, slot, etc.) station, which is typically, but not necessarily, located directly after the electrical contact station. The pseudo-singulation station is equipped with a mechanical (e.g., dicing saw) or laser unit, or both, or other device having the capability of pseudo-singulation in at least one direction, such as a water jet or controlled breaking. The pseudo-singulation units may be in a "clustered configuration" so as to be able to scribe and/or cut multiple passes of the machine head. The relative movement between the scoring/cutting head and the photovoltaic element in the machine direction can be achieved by continuous movement of the support sheet. The machine head may be capable of making all scoring and cutting in a single pass, or may have the ability to move in a lateral direction to reposition itself in a position necessary to perform additional scoring and/or cutting in the machine direction. The production line may be equipped with more than one cutting/scribing head for use in the machine direction. Scribing and/or dicing in other directions, including the cross-machine direction, may be performed by one or more additional heads with the ability to move in the cross-machine direction. Dicing and/or scribing may be performed in a step and repeat semi-continuous manner, wherein the support sheet with the photovoltaic element will remain stationary in the scribe/cut area in the lateral direction while the scribe/cut in the lateral direction is performed. After the scribing/cutting in the transverse direction of the given area is completed, the support sheet with the photovoltaic cells will be moved in the machine direction, bringing additional portions of the material for scribing/cutting in the transverse direction into the scribing/cutting area in the transverse direction. This order is merely an example, and slotting in a certain direction may be performed before, after, or simultaneously with slotting in a different given direction. Scribing and/or dicing in other directions (typically transverse directions perpendicular to the machine direction) may also be performed by an additional head or heads having the capability of moving in both the machine direction and the transverse direction, in which case the scribing and/or dicing will be performed in a continuous manner, the machine head for scribing and/or dicing in the transverse direction will follow the movement of the support sheet with the photovoltaic unit and perform scribing and/or dicing while moving in the machine direction. After a certain area is completed, the machine head repositions itself upstream in the machine direction to perform the next set of lateral scribe and/or scribe cuts. After dicing and/or scribing is completed, the support sheet with the scribed and/or diced photovoltaic cells is flexible enough to be rolled up and moved to a different production line for subsequent processing, or may undergo further processing downstream from the same production line. The width of the slit may be wide enough to provide partial transparency of the solar film and allow some (0.1% to 99.9%, preferably 5% to 90%) of the light radiation to pass through the solar film.

In some embodiments, the connector units between adjacent photovoltaic units or PV cells may be spring-like and may allow for stretching or shrinking or expanding of the product; the front and/or back panels may be utilized with sufficient elasticity (or rigidity, or stiffness, or flexibility) to achieve such stretching or contraction or expansion. Stretching may be achieved in one or more particular directions. Some embodiments may utilize PVDF (polyvinylidene fluoride or polyvinylidene fluoride) layer or coating or film as a front sheet or backsheet or as a PV protective layer.

In a next processing step, the support sheet with the scored and/or diced photovoltaic units may be laminated to a protective top and/or bottom sheet. The lamination step may include encapsulating the photovoltaic cells with a protective material such as Ethylene Vinyl Acetate (EVA). The protective top sheet needs to be transparent to maximize the intensity of solar radiation reaching the photovoltaic unit and have good long-term resistance to environmental conditions. ETFE is one example of a material suitable for the protective top sheet. Transparent UV epoxy is another example and may be reinforced with glass fibers in one embodiment. Top durable clear coats (such as clear synthetic "asphalt") may also be used to support heavy loads and protect the cells from damage, for example in solar road applications. Glass fillers may also be used in this application to improve durability. In one embodiment, a filler will be selected having a refractive index similar to the matrix in which the filler is embedded. The top sheet may also be colored or tinted to suit certain applications. In this embodiment, narrow bandwidth reflective particles of a particular color may be embedded within the top sheet. In another example, holographic diffraction induced colors may be created by particles and geometries inside the sheet that induce colors in certain directions and may be transparent in other directions in some cases as well. In another embodiment, the top sheet may include embedded lenses (e.g., microlenses) to focus the received radiation only on the active areas of the cells (i.e., excluding the kerfs formed during slotting and/or the chamfered areas of the individual photovoltaic cells/silicon wafers).

In another embodiment, the relative movement between the scoring/cutting head and the photovoltaic element in the machine direction may be achieved by continuous movement of the support sheet. The machine head may be programmed to scribe and/or dice in a "zig-zag" pattern by combining mechanical movement of the head in the transverse direction with optical and/or mechanical manipulation of the laser beam in the machine direction. Combining successive zig-zag scribe/dicing lines will produce a series of scribe/cuts along two diagonals of the PV cell. After dicing and/or scribing is completed, the support sheet with the scribed and/or diced photovoltaic cells is flexible enough to be rolled up and moved to a different production line for subsequent processing, or may undergo further processing downstream from the same production line. In yet another embodiment, the relative movement between the scoring/cutting head and the photovoltaic element in the machine direction may be achieved by continuous movement of the support sheet. The machine head is programmed to scribe and/or dice in a hexagonal pattern by combining mechanical movement of the head in the transverse direction with optical and/or mechanical manipulation of the laser beam in the machine direction. The continuous lines of partial hexagonal scribe/scribe tracks result in a series of scribe/cuts that form a complete hexagonal ("honeycomb") pattern across the PV cell to achieve a better ratio between cuts and complete areas on the original cell, thereby optimizing performance. After dicing and/or scribing is completed, the support sheet with the scribed and/or diced photovoltaic cells is flexible enough to be rolled up and moved to a different production line for subsequent processing, or may undergo further processing downstream from the same production line. Patterning is not limited to the "zig-zag" or hexagonal slotted patterns described herein and may include other geometric tracks and combinations thereof.

Various automated machines may be used to produce flexible solar rolls based on processed rigid/semi-rigid solar cells. In general, the machine can produce a flexible solar film using any solar cell that places both conductors at the bottom of the cell, such as an Interdigitated Back Contact (IBC) solar cell, a Metal Wrap Through (MWT) solar cell, an Emitter Wrap Through (EWT) solar cell, or other type of solar cell.

In one embodiment, single crystal, polycrystalline, and/or any other type of silicon-based solar cell may be used.

In one embodiment, the carrier sheet (e.g., the backsheet and/or encapsulant sheet) may be stretchable and may first be metallized, for example, with (non-stretchable or stretchable) contacts. The solar cell without metallization is placed in the correct position on this metallized and patterned substrate and is subsequently cut with minimal kerf and preferably without kerf (e.g. by breaking). The incision is then made by stretching the carrier sheet and thus moving the areas with active photovoltaic material away from each other.

In yet another embodiment, an identification tag such as an RFID may be embedded in the product to allow intelligent control and theft protection of the product, and the adhesive of the film layer may be designed to prevent the battery from opening without tearing and damaging the battery. Using an adhesive designed to break it under intervention to design anti-theft electronics adjacent to the battery will prevent cutting and access only a portion of the battery array.

In another embodiment, the top sheet and/or encapsulant may be metallized in a thin wire that may or may not be stretchable and then electrically connected to the top of a solar cell (such as a standard silicon photovoltaic cell), in which case the solar cell has one electrode at the bottom and the other electrode at the front.

In one embodiment, the machine is an R2R (roll to roll) type system, where the solar film is rolled onto a core for packaging and shipping at the end of the process. Packaging and shipping may take the form of "jumbo rolls" (full-size support rolls to be formed) or may take the form of smaller rolls cut from full-size rolls in the machine and/or transverse directions. The packaging and transport of the end product is intended to be limited only by practical handling constraints-weight, availability of raw materials of the required width, maximum effectiveness of the package rolls in the transport container, etc.

In some embodiments, the back side of the product will be coated with an adhesive (e.g., pressure sensitive adhesive, PSA) and laminated to the release layer to ensure that no contamination of the PSA occurs. The function of the adhesive is to facilitate easy attachment to the substrate (wall, roof, etc.).

In one embodiment, the machine may include a welding station in which individual cells are electrically connected in series and parallel to achieve the desired current and voltage of the membrane/module. The soldering process may be accomplished in several stages during the manufacturing of the module. In one example, bypass diodes, jumpers, intelligent logic, transistors, ideal diode circuits, battery-by-battery (or several batteries) Maximum Power Point Tracking (MPPT) circuits, etc. may be used in inline connections and welds between batteries to allow for MPPT of differently oriented (due to flexibility) batteries, anti-theft electronics, quick shutdown logic, AC current inversion, and bus bars and communications, for example. The connector between the battery and the solder is designed to meet environmental conditions and expansion due to low fatigue temperatures.

To allow production at higher speeds, the welding stations may be distributed along the line and need not perform electrical connections simultaneously. In a further embodiment, the welding may be replaced entirely or partly by using a conductive adhesive.

In one embodiment, after slotting and soldering, the solar cells may be ready for encapsulation by the back and front sheet encapsulant at the next station of the machine (e.g., polymer encapsulant, foil encapsulant, liquid encapsulant, vapor encapsulant, or other types of encapsulant, and combinations thereof).

In one embodiment, the slotted cell may be passed through a passivation stage to passivate dangling bonds in the exposed silicon, to protect the exposed silicon, and/or to generate a field of pushed away carriers similar to that on the top surface of an IBC cell, for example. This can be achieved by, for example, siO ₂ 、SiN _x 、AlO _x 、TiO ₂ Etc. for example ALD, CVD, PVD, wet or other techniques.

In one embodiment, the system does not need to be packaged at all, or at least in the sense of humidity, oxygen, or other environmental corrosive agents, due to the inherent stability of the components and the life expectancy that meets the requirements of a given application.

The encapsulation material may include EVA, glass fiber reinforced composites, and/or fluorinated polymers, such as ETFE, or in another embodiment, polyolefin or any other suitable material. The package may be composed of one or more layers of different polymers or other dielectric materials (such as oxides, nitrides, etc.) to provide the desired packaging (electrical and chemical), flexibility and optical properties of the product, and to meet the necessary criteria, such as resistance to 1500V breakdown voltage, permitting only low degradation of performance over decades, withstanding mechanical impacts such as hail, etc.

One or both of the front and back plates may be transparent. Areas for connecting peripheral devices may be designed in the front and/or back plates to contact bus bars, auxiliary electronic devices, etc. These may be manufactured, for example, as holes or weak points that allow penetration of connectors designed to provide good electrical connection.

The bus bar may be designed as a metallization, such as a metal foil laminate between a front plate and a back plate and/or an encapsulant film, and provides a pocket area for connection penetration and expansion of the electrical connection, once attached between two metallizations (e.g., springs or washer springs) having compressive stress, may be placed in place, and may then also be sealed.

In one embodiment, the electrical connection to the photovoltaic units and between adjacent photovoltaic units may be made at a later stage by a machine capable of penetrating the front and/or back sheets, performing the required electrical connection and retracting without damaging the sheet. The process may include a post-electrical connection "repair step" in which damage to the front or back plate is repaired by the encapsulation material or by other means.

The flexible solar film may be designed to cut in certain shapes and lengths depending on the needs of the application and need not have only one form factor as in the prior art. They may be cut to shape at the installation site.

The dimensions of the flexible solar film can be scaled to dimensions between 1mm and 100km, and preferably between 12m and 24km and between 1mm and 10m in the winding direction, and preferably between 12cm and 4m in the vertical direction.

The flexible solar film may be constructed in a modular manner that allows for different combinations and connections of PV cells to create a region capable of generating the desired voltage and current combinations.

Embodiments may include a toughened semiconductor substrate comprising a substrate body comprised of at least some brittle semiconductor material having a thickness greater than 0.01 mm. The semiconductor material may have a top surface, a bottom surface, and side surfaces. At least one specially configured gap may be introduced into the substrate body, wherein the specially configured gap may have a depth of at least 10% of the semiconductor material thickness and a width of at least 10% of the semiconductor material thickness. The toughened substrate may include a gap filler within the at least one specifically disposed gap, which may be composed of a softer/tougher material having compressible/stretchable and/or flexible mechanical properties. According to embodiments, the gap filler may impart or introduce mechanical impact or force absorbing and/or toughening properties to the composite semiconductor substrate as well as impart flexibility thereto.

The semiconductor body of the toughened semiconductor substrate may be composed of at least one semiconductor material selected from the group consisting of: intrinsic semiconductors, group IV semiconductors, group III-V semiconductors, group II-VI semiconductors, silicon dioxide, aluminum oxide, sapphire, germanium, gallium arsenide (GaAs) and indium phosphide (InP) germanium, C, siC, gaN, gaP, inSb, inAs, gaSb semiconductors on glass, silicon on glass, silica, alumina, quartz, gallium arsenide (GaAs), indium phosphide (InP), cdTe, organic/inorganic perovskite-based materials, CIGS (CuGaInS/Se), including doped versions of the above materials, and mixtures thereof.

The composite substrate body may include an epitaxial semiconductor on glass: CIGS on glass (Cu In Ga S/Se), AZO/ZnO/CIGS on glass, FTO/ZnO/CIGS on glass, ITO/ZnO/CIGS on glass, AZO/CdS/CIGS on glass, FTO/CdS/CIGS on glass, ITO/CdS/CIGS on glass, FTO/TiO ₂ CIGS, cdTe on glass, AZO/ZnO/CdTe on glass, FTO/ZnO/CdTe on glass, ITO/ZnO/CdTe on glass, AZO/CdS/CdTe on glass, FTO/CdS/CdTe on glass, ITO/CdS/CdTe on glass, FTO/TiO/ ₂ /CdTe。

The semiconductor body may be configured to produce a semiconductor device selected from the group consisting of: photovoltaic cells, light emitting diodes, transistors, power transistors, integrated circuits, very large scale integrated circuits, detectors, diodes, and microelectromechanical systems (MEMS).

According to an embodiment, the gap filler may be composed of at least one material selected from the group consisting of: (a) polymers, (b) resins, (c) amorphous silicon, (d) glass, (e) metals, (f) carbon, (g) oxygen, (h) monomers, (i) second semiconductors, (j) oligomers, (k) reaction systems (e.g. monomers and photoinitiators), (l) EVA, (m) PVDF, (n) silaGrease, (o) fluoropolymer, (p) SiN _x (q) EPDM, (r) rubber,(s) PDMS, (t) PFE, (u) nitrogen, (v) titanium, (w) TaN, (x) AlN, (y) organic compounds, (z) inorganic compounds, (aa) nitrides, (ab) phosphides, (ac) carbides, (ad) selenides, (ae) chalcogenides, (af) halides, and/or (oag) combinations of two or more thereof.

The gap filler composed of an elastic or plastic filler may include (a) a polymer, (b) a resin, (c) a monomer, (c) an oligomer, (e) PDMS, (f) EVA, (g) PFE, (h) a reaction system (e.g., a monomer and a photoinitiator), (i) PVDF, (j) a silicone resin, (k) EPDM, and (l) a rubber. The gap filler composed of the passivation material may include: (a) SiN (SiN) _x 、(b)SiO ₂ (c) AlN, (d) TaN, (e) nitride, (f) phosphide, (g) carbide, (h) selenide, (i) chalcogenide, (j) halide, and (k) amorphous silicon. The gap filler comprised of a composite material for chemical, thermal and mechanical durability may include at least one of the following materials: a) a metal, b) carbon, c) a ceramic material. The gap filler may consist of any combination of the options listed above.

According to an embodiment, the gap filling material may be reactively grown within the respective gap. The gap filler may be formed by reacting some gas or other substance with the wall material of the gap sidewall. The gap filler may form a coating on the gap sidewall. The coating on the sidewalls of the gap may be formed by the reaction of the sidewall material with a specific environment (e.g., gas) provided during the dicing/dicing process (e.g., during laser dicing).

According to an embodiment, the gap filler may physically expand and may push the spacers apart. The gap filler may expand during reaction with the material from the sidewall. Alternatively, the gap filler may be introduced into the gap as a mixture of reactive materials that expand as a result of reacting with themselves.

The toughened semiconductor substrate may include a gap filler mixture having anisotropic particles attached in a particular direction relative to a top or bottom surface or any other particular plane in the substrate.

The toughened semiconductor substrate may include gap fillers composed of materials deposited as discrete layers within or across the gap. The deposition material may be substantially parallel to the top and bottom surfaces of the semiconductor substrate or parallel to any other direction, including perpendicular to the top and bottom surfaces of the substrate. Different ones of the deposited discrete layers have different characteristics and provide different toughening functions.

According to embodiments, the toughened semiconductor substrate may include a specially configured gap created by removing material from the substrate body. The specially arranged gaps may extend across at least the top surface of the substrate body in a single line or in a pattern consisting of an array of lines or other shapes. The line arrays may intersect at different points to create discrete regions of the top surface that are separated from adjacent like discrete regions.

The toughened semiconductor substrate according to embodiments may include specially disposed gaps extending across each of the top and bottom surfaces of the substrate body, forming separate and distinct gap patterns within each of the top and bottom surfaces. The gap filling material used to fill the gap patterns within each of the top and/or bottom surfaces may be different, wherein one of the two gap patterns may be unfilled.

The toughened semiconductor substrate according to embodiments may include a specially configured gap created by removing material from the substrate body and which may pass entirely through the semiconductor body from the top surface to the bottom surface. According to an embodiment, a specially provided gap may be created by expanding the distance between the semiconductor substrate portions from the sides of the gap.

The specially configured gap may be perpendicular to the top and bottom surfaces. The specially configured gap may be at an angle other than 90 degrees with respect to the top and bottom surfaces. The specially provided gap may have a regular profile with flat walls. The specially configured gap may have an irregular profile, such as "V-shaped", "U-shaped", flat or other shapes.

Embodiments include all steps that are currently known, or that will be devised in the future to provide the mentioned semiconductor features.

Embodiments may include a mechanically toughened Photovoltaic (PV) cell comprising: a semiconductor body comprised of a semiconductor material having a form factor, the semiconductor body including a top surface, a bottom surface, and at least one sidewall, at least one specially configured gap within the body; and a gap filler deposited in the gap formed in the battery body. The gaps within the cell semiconductor body may extend in a pattern to divide or segment the PV cell (or array of PV cells, or array of PV micro cells) into two or more micro PV cells, each micro PV cell having a body, a top surface, a bottom surface, and sidewalls.

According to an embodiment, each micro PV cell may include at least two electrode contacts of the micro PV cell, and each electrode contact is electrically connected to a different side of the P-N junction within its respective micro PV cell. According to an embodiment, the electrode contacts may be laterally spaced apart on the bottom surface of the micro PV cell. The micro PV cell may include at least two electrode contacts on any surface of the micro PV cell, and each electrode contact is electrically connected to a different side of the P-N junction within its respective micro PV cell.

The top surface of the micro PV cell may be polygonal selected from the group consisting of: (a) square; (b) rectangular; (c) decagons; (d) hexagonal; (e) heptagons; and octagons. Each side of the polygon has a length in the range of 0.1mm to 5 mm. The bottom surface of the micro PV cell may have the same shape and substantially the same side length as the top surface. According to an embodiment, the bottom surface may have a different side length than the top surface.

The micro PV cells may have a thickness ranging from the top surface to the bottom surface between 0.01mm and 5 mm. The sidewalls of at least one micro PV cell may be sloped with the top surface or may have a curved surface.

According to embodiments, the sidewalls of the micro PV cells may be coated with a material different from the material comprising the micro PV cell body. The sidewalls may be coated with a passivation material. The sidewalls may be coated with an electrically insulating material. The sidewalls may be coated with an electrically insulating material. The side walls may be coated with a compound that is generated when the battery body material reacts with a substance selected from the group consisting of: (a) oxygen, (b) ammonia, (c) nitrogen, (d) hydrogen and (e) argon, and (f) compounds of these materials and (g) mixtures thereof.

According to an embodiment, each of the electrodes of the micro PV cells is connected to a separate flexible conductor, which is interconnected with a corresponding electrode on the separate micro PV cell. According to an embodiment, the conductive mesh may include conductors electrically connected to corresponding electrodes on different toughened PV cells.

A toughened PV cell according to an embodiment may include a clear or transparent polymer laminate over the top surface. The PV cells can include clear (or transparent) top sheets and/or encapsulants. The top sheet may include an optical concentrator positioned over the micro PV cells. The optical concentrator may or may not cover all or part of the gap between the micro PV cells. An optical concentrator may be embossed or otherwise added to the transparent top sheet. The addition may include chemical etching, micromachining, laser ablation, or other means during or after attaching the laminate to the PV cell.

According to embodiments, the optical concentrator may be geometrically optimized to direct sunlight from an optimized oblique angle to the active area of the corresponding micro PV cell. The optical concentrator may be geometrically optimized to direct light away from the inactive portion of the corresponding micro PV cell.

Embodiments may include mechanically toughened Photovoltaic (PV) cell arrays comprising a flexible and/or stretchable support sheet on which two or more toughened PV cells may be arranged relative to each other. The array may include an electrical conductor mesh for electrically interconnecting corresponding electrical output terminals of at least two toughening PV cells, and at least one of the toughening PV cells may be formed from a semiconductor substrate having a form factor including a top surface, a bottom surface, and at least one sidewall, and at least one specially disposed gap within the body having a gap filler deposited in the gap.

The array may be comprised of toughened PV cells as described above. Electrical contacts may be attached to each toughening cell and may be placed on a support sheet including interconnections between toughening PV cells. The PV cell may include point contacts interspersed with respective bottom surfaces, and may include P-contacts and N-contacts.

A toughened PV cell according to an embodiment may include point contacts interspersed through its bottom surface, and may include p-contacts and n-contacts connecting two or more point contacts of the same polarity.

An array according to an embodiment may include a network of electrical conductors to electrically interconnect corresponding electrical output terminals of at least two toughening PV cells, and the array may also connect micro PV cells and/or micro PV cell groups and/or one or more toughening PV cells.

An array according to embodiments may provide a flexible PV module consisting of a continuous flexible array that may be wound on a roll having a diameter of less than 50 cm. The flexible module may consist of a continuous flexible array between 0.12m and 24km in length and between 0.12m and 12m in width.

According to some embodiments, the specific gravity of the PV module may be below 1, and it may float on water (or other liquid). The array support sheet may be made of a closed cell foam polymer. The closed cell foam polymer may be made from a polymeric material comprising: polyolefin, PDMS, EPDM, silicone, polyurethane. The support sheet may be made of fluoropolymer, PET, PVC, EPDM, ETFE, ECTFE, acrylic, PC, PVDF, PEF, POE, PP, PE, al, silicone, and combinations thereof. The top sheet of the array may be made of clear and/or tinted and/or patterned and/or embossed fluoropolymers, PET, PVC, EPDM, ETFE, ECTFE, acrylic, PC, PVDF, PEF, POE, PP, PE, aluminum, silicone and combinations thereof, ETFE, PET, PVDF, PP, PE, EVA and FEP. In some embodiments, the PV module or PV cell array may be formed from or may include one or more layers having a specific gravity of less than 1 to enable the entire module or product to float on water and/or other liquids; for example, by using one or more layers of sponge or foam lightweight plastic or polystyrene or foam polystyrene or polystyrene foam, optionally with closed cells or coated cells. These layers may be glued or adhered or otherwise attached or mounted under the lowermost layer of the module or array, or under certain portions or areas thereof, or at the side edges or side panels thereof, or in other suitable locations.

Turning now to fig. 1A, a functional level symbology of a system for toughening a semiconductor substrate or wafer (wafer and substrate are used interchangeably in the present application) according to one embodiment is shown. The operation of the system of fig. 1A may be described in conjunction with the steps listed in the flowchart of fig. 1B, fig. 1B being a flowchart of a method of toughening a semiconductor substrate according to an embodiment. The particular machine/station and the particular sequence of steps used may vary without affecting the innovation.

The bottom support sheet is unfolded and combined with the bottom package to form a bottom support on which electrical interconnects, such as conductor webs (interdigitated or non-interdigitated), are unfolded and placed. On the composite film and electrical support structure, a pick-and-place machine places one or more semiconductor substrates in any configuration suitable for use in some embodiments. The electrical contact station makes contact between the associated electrode on the placed substrate and the corresponding conductor on the web, after which the bottom encapsulant is cured at the adhesive curing station. According to an embodiment using a dicing, dicing or breaking station, the top surface of the electrically connected and adhesive attached substrate is separated/singulated/grooved to form a semiconductor substrate body gap. Then at the gap filling station, the gap filling material according to an embodiment fills the substrate gap that can be cleaned through the notch portion. The transparent top laminate film and transparent top sheet are then applied together and pressed on top of the substrate, after which the output product is rolled up at a winding station.

Alternative processes and equipment in the context of the system of fig. 1A are shown in the following figures. Turning now to fig. 2A, a side view of a pick-and-place process 102A is shown for placing a semiconductor substrate on a support sheet as part of an exemplary embodiment. Fig. 2B is a top view illustration of a pick-and-place process 102B by which a semiconductor substrate is placed on a support plate as part of an exemplary embodiment 102B.

Turning now to fig. 3A-3C, a series of top view illustrations of a semiconductor substrate group (groups 103A, 103B, 103C, respectively) that is located on a support sheet and separated, grooved, or singulated by a physical scoring or dicing (dicing) process performed by an automated cutter at a dicing station, according to embodiments. Fig. 4A-4C include a series of side view illustrations of a semiconductor substrate set (set 104A, set 104B, set 104C, respectively) that is positioned on a support sheet and fully singulated according to a multi-step singulation embodiment, wherein a combination of two-dimensional partial physical scribe or scribe (dicing) and physical deformation is used to fully singulate the substrate in a predetermined pattern. Fig. 4D-4F show a series of top views of a semiconductor substrate (substrate 104D, substrate 104E, substrate 104F, respectively) as it is transformed by a separation/singulation process, according to an embodiment.

Turning now to fig. 5A, a functional level diagram of a beam-based semiconductor separation system 105A is shown, according to an embodiment. The beam may be a laser, an electronic beam, an acoustic beam, a water stream, a gas/jet stream, and/or any other beam type known now or developed in the future. Fig. 5B and 5C each show a series of top views of a semiconductor substrate (series 105B and series 105C, respectively) as it is transitioned through an exemplary separation/singulation process according to a beam-based embodiment.

Turning now to fig. 5D, a perspective view of a semiconductor substrate body 105D is shown, the semiconductor substrate body 105D having been separated, grooved or singulated according to an embodiment and including an electrical conductor mesh under a gap formed by singulation according to a further embodiment. Fig. 5E is a side cross-sectional view of several alternative semiconductor body gap forming geometries, shown as gap-shaped groups 105E, that may be produced and/or used in accordance with an embodiment. It should be noted that this figure illustrates a particular example or embodiment in which a wafer is pre-attached to a conductor mesh. This is not always the case.

Fig. 6A and 6B are bottom views of semiconductor bodies (106A and 106B, respectively) according to PV device embodiments, wherein interdigitated positive and negative electrodes protrude from the bottom of the substrate body, and wherein different separation/dicing modes are used depending on the placement and arrangement of the negative electrodes relative to the corresponding positive electrodes. Fig. 6A shows the use of rectangular cuts to singulate PV cells when opposite corresponding electrodes are aligned. Fig. 6B shows the use of diagonal cuts to singulate the PV cells when opposite corresponding electrodes are misaligned.

Turning now to fig. 7, a functional level diagram of a beam-based semiconductor separation system 107 is shown, according to an embodiment; wherein a reactive species is provided during beam separation and can react with portions of the semiconductor body exposed to the splitter beam. This is just one possible option for gap filling, according to an embodiment. Every filler insertion or deposition known today or to be designed in the future may be suitable. Fig. 8A is a perspective view of a semiconductor substrate body 108A singulated and including gap fillers in the form of coatings on the gap sidewalls according to some embodiments. Fig. 8B is a side cross-sectional view of several alternative semiconductor body gap formation geometries, shown as gap-shaped sets 108B, which may be produced and/or used according to embodiments, further including a coating layer. The gap filling material may coat only the spacers, may completely fill the gaps, or may fill the gaps and overflow, thereby forming a coating layer on the upper surface of the wafer.

Fig. 9A-9F include three sets of top and side illustrations of a semiconductor substrate/wafer body, wherein each set illustrates a transition of the semiconductor substrate/wafer body from an un-toughened configuration to each of three separate toughened configurations, according to an embodiment. They show three options: (1) partial top separation/singulation, filling and coating; (2) Top and bottom portion separation/singulation, filling and coating; and (3) complete separation/singulation, filling and coating. In case (2), the top and bottom slotting patterns may be the same or different, and the filler material used in the gaps on either side may be the same or different. For example, fig. 9A shows a set 109A of wafers, wherein: item 201 is a top view of the wafer before processing, and item 202 is a side view thereof; item 203 is a top view of the wafer after partial singulation, and item 204 is a side view thereof; further, fig. 9B shows a group 109B of wafers, wherein: item 211 is a top view of a partially singulated wafer (e.g., after the toughening agent is incorporated into the kerf; the coating on the top layer is optional), wherein item 212 is a side view thereof, and wherein item 213 is A-A cross-sectional view thereof. Fig. 9C shows a set 109C of wafers, wherein: item 221 is a top view of the wafer before processing, and item 222 is a side view thereof; item 223 is a top view of the wafer after the top and bottom portions are singulated, and item 224 is a side view thereof; further, fig. 9D shows a set 109D of wafers, wherein: item 231 is a top view of a partially singulated wafer (e.g., after the toughener is incorporated into the top and bottom kerfs; the coating on the top layer is optional), wherein item 232 is a side view thereof, and wherein item 233 is A-A cross-sectional view thereof. Fig. 9E shows a set 109E of wafers, wherein: item 241 is a top view of the wafer before processing, and item 242 is a side view thereof; item 243 is a top view of the wafer after full singulation, and item 244 is a side view thereof; further, fig. 9F shows a set 109F of wafers, wherein: item 251 is a top view of the fully singulated wafer (e.g., after the toughener is incorporated into the kerf; the coating on the top layer is optional), wherein item 252 is a side view thereof, and wherein item 253 is A-A cross-sectional view thereof.

Turning now to fig. 10A, a functional block level diagram of a system 110A for producing a Photovoltaic (PV) related embodiment is shown, wherein a singulated/grooved substrate, optionally on a support sheet, is encapsulated in top and bottom EVA films (as one example of an encapsulation material) and then in top and bottom polymer sheets. Materials other than polymeric sheets may be used. The polymer sheet is optionally formed (stamped, etched, machined, ablated) with optical concentrators on the top sheet. Fig. 10B is a side view illustration of a transparent polymer imprinting assembly 110B to provide micro-lenses or mini-lenses on a top sheet covering toughened PV cells, according to an embodiment. Fig. 10C is a side view illustration of an array 110C of micro PV cells toughened, packaged and covered with a top sheet embossed with micro lenses according to an embodiment. Fig. 10C illustrates an embodiment in which asymmetric condenser microlenses may be used corresponding to the angle of solar radiation.

In some embodiments, the manufacturing process may include operations to clean or brush or wash or rinse away, or otherwise remove or discard particles or residual material resulting from the removal process (e.g., due to dicing, slotting, cutting, etc.). These particles or residues, and/or material removed to create gaps or pits or tunnels, may be washed away or flushed away or brushed away or may be blown away via an air blast or may be shaken away by shaking or vibration, or may be cleaned or removed or discarded by application of a laser beam or laser-based particle removal process (e.g., optionally with a different laser type than that used for grooving or cutting), or by temporarily immersing the material in a bath or container of liquid for cleaning (such as an ultrasonic bath), or may be otherwise removed or discarded.

For purposes of illustration, some portions of the above or discussed herein and/or some of the drawings may relate to (or may exhibit) a single type of pattern or a single type of patterning performed with respect to an entire wafer or an entire group of PV cells or arrays of PV cells or other semiconductor devices; however, these are merely non-limiting examples, and some embodiments may utilize or may have two or more different patterns within (or applied to) a single wafer or a single PV cell array or other semiconductor device. For example, a first region of a wafer may be fabricated with gaps or grooves or pits according to a first pattern (e.g., a crisscross pattern, or a pattern of horizontal lines intersecting perpendicular lines), while a second region of the wafer has gaps or grooves or pits according to a second, different pattern (e.g., a zig-zag pattern, or a curvilinear pattern; or a pattern of horizontal lines intersecting diagonal lines). Similarly, a first region may include gaps or grooves or pits (e.g., N gaps or N grooves or N pits per square centimeter) at a first density, while a second co-located region or nearby region or adjacent region may have gaps or grooves or pits (e.g., 2N or 3N or 5N gaps or grooves or pits per square centimeter) at a second density. Similarly, the density of lines or other geometries formed by such gaps or trenches or pits may differ between or among different areas of the same wafer or PV cell array. This is not just a design feature, but a functional feature; for example, a single surface or wafer or device or end product may thus be adapted to have different levels of rigidity or stiffness or flexibility or elasticity or toughness in different areas to achieve a particular functional goal. For example, a first region or component of the final product may be manufactured with a greater number or density of gaps or dimples, or a first specific pattern thereof, to achieve a higher level of mechanical flexibility in that region; while a second region or component of the final product may have a smaller number or density of gaps or depressions, or a second specific pattern thereof, to achieve a higher or reduced level of mechanical rigidity of the second region.

In some embodiments, the gaps or grooves or dimples or recesses or depressions or islands may be arranged or created in a pattern other than a cross or other than horizontal intersecting the vertical at 90 degrees. For example, some embodiments may utilize a pattern of gaps or grooves or pits, wherein a first set of substantially parallel lines intersect a second set of substantially parallel lines at a particular angle (e.g., not a right angle); or intersect a set of curves; or the like.

In some embodiments, a fabricated wafer or PV cell array or other semiconductor device may include multiple layers such that its top layer expands when bent or flexed and its bottom layer contracts or contracts when it is bent or flexed; or vice versa. Thus, slotting, cutting, gap creation and patterning during fabrication may be preconfigured to accommodate such mechanical expansion or contraction of the layers; and may optionally utilize different patterns in different areas, and/or different densities of gaps or grooves in different areas, and/or different types or shapes of gaps or grooves or pits or tunnels in different areas to ensure that such expansion or contraction is enabled.

One or more of the laser processes described above and/or herein, or laser-based processes or operations, may be performed at one or more different stages of the manufacturing process. For example, the laser treatment or cutting or grooving may be performed as an initial operation or as a first operation or as a preparation operation in a manufacturing process; and/or as operations performed during the manufacturing process itself; and/or as part of a post-treatment or post-manufacturing operation; and/or as part of a cleaning operation or as part of a residue removal operation; or by selectively applying a laser to one or more layers and not to other layers, or to one or more specific encapsulant layers or encapsulant materials (or all of these), and/or for the manufacture of connectors or electrical connectors, or as an operation prior to or accompanied by or subsequent to one or more other operations (e.g., soldering at low temperature, SMT soldering or mounting, hot air soldering, reflow soldering using a reflow oven or reflow machine, soldering using a tin-lead alloy as filler metal, etc.). In some embodiments, laser treatment may be selectively applied to only one or more layers and not to other layers and/or to only specific areas. In some embodiments, the laser treatment may selectively operate on the inner or bottom layers while traversing but not necessarily treating or affecting one or more layers above the treated layers, e.g., selectively laser treating only the silicon layer and not other layers above and/or below it.

In some embodiments, a single encapsulant layer may be used at or near the bottom of the manufactured module. In other embodiments, a single encapsulant layer may be used at or near the top of the fabricated module. In other embodiments, two or more encapsulant layers may be used at two (or more) different regions or portions of the manufactured module; such as one encapsulant layer at or near the bottom of the manufactured module and another encapsulant layer at or near the top of the manufactured module. Such an encapsulant layer may include or may be, for example, a Thermoplastic Polyolefin (TPO) encapsulant, a polyolefin elastomer (POE), or other suitable material.

In some embodiments, one or more layers of fiberglass or fiberglass may be used or added or connected, or may be an integral part of the manufactured module. For example, a single fiberglass or fiberglass layer may be used at or near the bottom of the manufactured module. In other embodiments, a single fiberglass or fiberglass layer may be used at or near the top of the manufactured module. In other embodiments, two or more fiberglass or fiberglass layers may be used at two (or more) different regions or portions of the manufactured module; such as one fiberglass or fiberglass layer at or near the bottom of the manufactured module and another fiberglass or fiberglass layer at or near the top of the manufactured module. The fiberglass or fiberglass components may be embedded in an epoxy and/or polyester and/or POE or other stretchable/compressible polymer and/or other thermoset or thermoplastic matrix or array or material.

In some embodiments, one or more layers of carbon fibers may be used or added or connected, or may be an integral part of the manufactured module. For example, a single carbon fiber layer may be used at or near the bottom of the manufactured module. In other embodiments, a single carbon fiber layer may be used at or near the top of the manufactured module. In other embodiments, two or more carbon fiber layers may be used at two (or more) different regions or portions of the manufactured module; such as one carbon fiber layer at or near the bottom of the manufactured module and another carbon fiber layer at or near the top of the manufactured module. The carbon substance and/or carbon fiber component may be embedded in an epoxy and/or polyester and/or POE or other stretchable/compressible polymer and/or other thermoset or thermoplastic matrix.

In some embodiments, the above-described operations or some of the operations may be performed as (or in addition to) a pre-forming process, and/or may be performed as (or in addition to) a post-forming process. In some embodiments, the fabrication of the module or array of PV cells may be performed as part of (or in conjunction with) a particular molding process, wherein a particular non-planar three-dimensional shape (e.g., roof) is used to fabricate the mold and place the PV cells thereon.

In some embodiments, the fabrication process may include doping and/or pre-doping and/or post-doping one or more layers or features or regions, in particular, silicon layers. For example, positively charged (p-type) silicon-based may be used to fabricate p-type PV cells. In one exemplary example, the wafer is doped with boron; the wafer dome is then negatively doped (n-type) with phosphorus to help form a p-n junction to enable current flow in the PV cell. In other embodiments, n-type PV cells may be fabricated, with the n-doped side serving as the basis for the PV cell; optionally providing higher efficiency or being less affected by Light Induced Degradation (LID). In some embodiments, doping may be performed prior to cutting or slotting or forming pits or forming gaps. In other embodiments, doping may be performed after cutting or slotting or pit formation or gap formation.

In some embodiments, automated manufacturing using roll-to-roll automation with optional roll-to-roll automation may be used. In other embodiments, the use of such rolls may be optional; and the manufacturing process may avoid the use of rolls or wound material in whole or in part, but may use planar materials, planar layers, discrete components arranged and/or placed and/or mounted and/or connected and/or glued and/or soldered, and then repeat the process for additional wafers or modules or arrays that are later interconnected, and/or by using other suitable processes. In some embodiments, the process may be divided into multiple portions, which are performed in a continuous mode, a discontinuous mode, a semi-continuous mode (e.g., step and repeat), and/or in a batch mode. Each of these types of processes may be implemented to be comprised between 0% and 100% of the whole process.

In some embodiments, the tandem and splicing of PV cells or PV modules may be performed by a splicer and a tandem or other suitable welder, which may automatically or semi-automatically join or connect the PV cells to each other; flat ribbons are optionally used to form the desired strings of PV modules while minimizing mechanical and/or thermal stresses. In some embodiments, the connection between the PV cells or PV modules may be performed in one or more suitable ways, for example, using welding, soldering, using hot air and/or Infrared (IR) radiation or light, gluing, bonding, adhesive decals, or the like. In some embodiments, one or more layers of hot or heated adhesive or glue or bonding material may be applied over the top layer and/or under the bottom layer and/or in specific areas or areas (e.g., optionally, in specific areas that are estimated or intended to be subsequently bent or folded). Alternatively, fiberglass or carbon fiber layers may be added or used; and one or more glass layers or other transparent layers that may help toughen the module or provide additional support or rigidity to specific areas thereof.

In some embodiments, alternatively, the manufactured wafer or PV cell array or PV module may have the property of being reduced in size during some production operations, such as two or three or more discrete wafers or discrete PV cell arrays that are then soldered or connected together in series. For example, instead of manufacturing a single wafer or single PV cell module having a total length of 120 millimeters, three smaller wafers or modules (40 millimeters each) may be produced individually, or six smaller wafers or modules (20 millimeters each) may be produced individually; and then such discrete wafers or modules may be connected in series, resulting in modules that support or provide greater voltage and lower current. In other embodiments, such discrete wafers or modules may be connected in parallel with each other rather than in series; alternatively, a plurality of modules may be connected in series first, and then connected in parallel with each other; to achieve the desired voltage or current target. In some embodiments, shingled connections may be used between or among adjacent wafers or modules, or individual cells or shingled modules may be connected to each other; while in some embodiments, seamless soldering, or other suitable types of mechanical and/or electrical connection of cells or cell arrays or wafers or PV modules may be used.

Some embodiments may be used to manufacture a PV cell or a PV module, or an array or matrix or PV cell or PV microcell, which is suitable for use on roof tops, walls, building tops, vehicle tops; or as roof shingles; or as a wall or side panel of a building or other structure; or as part or on top of, the following: an automobile or truck or vehicle, golf cart or "club car", high or low speed electric vehicle, work vehicle, tractor, elevator, crane, scooter, electric scooter, motorcycle, scooter, wheelchair, autopilot or autopilot vehicle, remote control vehicle, aircraft, drone, unmanned Aerial Vehicle (UAV), autopilot or autopilot drone or UAV or aircraft, remote control drone or UAV or aircraft, satellite, spacecraft, space shuttle, train, truck or train carriage, ship or boat or other water craft, or other suitable device.

Some embodiments operate to replace conventional PV cells or conventional PV modules that are typically fragile or that may include fragile wafers with new and inventive PV cells and PV modules that have reduced breakage; for example, by introducing patterned cuts or grooves or gaps or pits (e.g., particularly in the silicon layer, but could also be the silicon layer and top sheet or further protective layer, such as PET, ETFE, PVDF, other top sheet materials, glass or glass fibers cut to the same dimensions as the silicon layer underneath, etc.) into the product, an array or matrix or other arrangement of smaller PV cells that are more resistant to mechanical stress and/or less damaging when force or pressure is applied. A conductive backsheet or mesh or other connection layer, or other bridging or connection technique for joining the PV cells, may ensure that the electrical conductors are not damaged and disturbed, located, for example, at the bottom layer of the PV module.

According to some embodiments, pits or gaps or depressions or pockets or cavities or tunnels or trenches or pits created according to a predetermined pattern in or at a wafer or substrate to divide the wafer or substrate into an array, matrix or batch or arrangement of interconnected micro PV cells, in particular formed by a laser beam or by laser cutting or by laser etching or other laser-based processes; and not via Deep Reactive Ion Etching (DRIE) nor via DRIE-based pleating techniques. The applicant has appreciated that the use of, inter alia, laser-based or beam-based processes to introduce and form such pits, and pits or depressions formed using such lasers, may improve or enhance the performance and/or characteristics of the end product relative to pits or pleat-based pits using DRIE. Applicants have further appreciated that in some embodiments, the use and formation of laser-based or beam-based pits or depressions or grooves or depressions or pockets may be preferred (e.g., relative to a fold-based approach, or a DRIE-based approach) because it may allow for faster production processes and/or may allow for the creation of more precise three-dimensional structures or two-dimensional patterns with greater precision. However, it should be noted that some embodiments may utilize non-laser based methods, such as DRIE-based methods or corrugation or chemical processes, to form such pits; and in some embodiments such methods may be used instead of, or even in addition to (e.g., before or after) laser-based or beam-based methods. Similarly, in some embodiments, dicing techniques may be used in place of or in addition to the processes described above, as well as various cutting techniques or mechanical grooving processes.

Some embodiments particularly utilize a wafer or substrate having a thickness of less than 200 microns, such as a wafer or substrate thickness of less than 200 microns, or a wafer or substrate thickness of less than 190 microns, a wafer or substrate thickness of less than 180 microns, a wafer or substrate thickness of less than 170 microns, a wafer or substrate thickness of less than 160 microns, a wafer or substrate thickness of less than 150 microns, a wafer or substrate thickness of less than 140 microns, or a wafer or substrate thickness of 150 microns or 160 microns or 170 microns or 180 microns. Applicants have appreciated that in some embodiments, particular utilization of such thickness values may help improve or enhance performance and/or characteristics of the final product. However, it should be noted that other embodiments may utilize or may include wafers having other suitable thickness values or ranges of values; for example, a wafer having a thickness of 200 microns or 220 microns or 240 microns or 250 microns, or a wafer having a thickness of less than 300 microns, or a wafer having a thickness of less than 400 microns, or a wafer having a thickness of less than 500 microns; however, in some embodiments, it may be preferable to utilize thinner wafers in order to reduce the weight and/or size and/or form factor of the final product, and/or in order to reduce costs, and/or in order to reduce the amount of material that needs to be removed or processed or discarded to achieve a particular implementation of the final product.

According to some embodiments, the dividing or segmenting of the wafer or substrate is performed in two or more directions, or along two or more axes, or along two or more lines, or along (or according to) two or more patterns or routes (not necessarily linear or straight; or may be curved, or may have other suitable shapes). Furthermore, the division or segmentation need not necessarily be perpendicular to the direction of the electrical contacts; and/or need not be perpendicular to the direction only; rather, it may be inclined or angled or diagonal with respect to the general direction of the electrical contact or with respect to the plane in which the electrical contact is located. Applicant has appreciated that such multi-dimensional or multi-directional segmentation, and/or such specific non-vertical segmentation or demarcation, is not merely a design choice; rather, in some embodiments, they may help to improve or enhance the performance and/or characteristics of the final product.

In some embodiments, the depressions or pits or pockets or depressions formed in the wafer are non-elongated; such that the resulting product has an array or set of "islands" or "discrete islands" rather than having "bars" or "elongated bars". In some embodiments, the top region of each micro PV cell can have a horizontal axis and a vertical axis such that the ratio therebetween is, for example, no more than 1.25, or no more than 1.50, or no more than 1.75, or no more than 2, or no more than 3, or no more than 5. Applicant has appreciated that the use of such ratios is not merely a design choice; rather, in some embodiments, it may help to improve or enhance the performance and/or characteristics of the final product.

According to some embodiments, the electrical contacts of the micro PV cells, or the electrical contacts placed under the wafer or at the bottom thereof, are not exposed by the laser-based or beam-forming based pits or depressions or pockets; in contrast, in some embodiments, such formation penetrates only partially (rather than completely) down but still leaves unpenetrated silicon at the bottom, and does not expose electrical contacts. Applicants have appreciated that in some embodiments, the use of such partial and incomplete penetration may help improve or enhance the performance and/or characteristics of the final product.

Embodiments may be used with a variety of schemes or patterns of electrical contacts, which may be, for example, interdigitated Back Contacts (IBC), non-interdigitated patterns or schemes of contacts, contact schemes utilizing multiple parallel lines, gate contacts or gate-like contacts, backplanes or wafers with or including arrays or patterns of exposed points for electrical contact, and the like.

Embodiments may be used in combination with a single wafer; or in combination with a wafer or plate comprising or consisting of a plurality of PV cells. Additionally or alternatively, some embodiments may be used in conjunction with a continuous roll-to-roll process or other scaled-up production methods or processes.

In some embodiments, an apparatus includes a segmented Photovoltaic (PV) cell array comprised of a plurality of micro PV cells. The array of PV cells includes one of: (I) A single wafer segmented via a plurality of pits, (II) a portion of a single wafer segmented via a plurality of pits, (III) a set of two or more interconnected wafers segmented via a plurality of pits. The wafer is a wafer selected from the group consisting of: (i) A composite metallized wafer having an underlying metallization layer, wherein each pit penetrates the entire non-metallization layer of the wafer, but does not penetrate the underlying metallization layer of the wafer; (ii) A semiconductor wafer, wherein each pit penetrates no more than 99% of the entire depth of the semiconductor wafer. Each pocket forms a physical depression separation between two adjacent micro PV cells that are still interconnected with each other, but only at some, but not all, of the heights of the two adjacent micro PV cells. The micro PV cells are mechanically and electrically connected to each other.

In some embodiments, each micro PV cell has a top surface area of less than one square centimeter; wherein the segmentation of the individual wafers, and wherein the inclusion of pits between the miniature PV cells inhibits or reduces mechanical breakage of the PV cell array.

In some embodiments, at least one of the pits is a U-shaped pit; wherein the segmentation of the individual wafers, and wherein the inclusion of pits between the miniature PV cells inhibits or reduces mechanical breakage of the PV cell array.

In some embodiments, at least one of the pits is a V-shaped pit; wherein the segmentation of the individual wafers, and wherein the inclusion of pits between the miniature PV cells inhibits or reduces mechanical breakage of the PV cell array.

In some embodiments, at least one of the dimples is generally V-shaped, but has at least a first inner sidewall inclined at a first inclination angle and has a second inner sidewall inclined at a second, different inclination angle; wherein the segmentation of the individual wafers, and wherein the inclusion of pits between the miniature PV cells inhibits or reduces mechanical breakage of the PV cell array.

In some embodiments, the segmented PV cell array is tougher and less prone to breakage relative to non-segmented PV cell units having the same overall area due to the segmentation of the individual wafers and due to the inclusion of the pits in the micro PV cells.

In some embodiments, the micro PV cells and the pits separating them are arranged in the following cross pattern: (i) The first set of straight parallel lines perpendicularly intersecting (ii) the second set of straight parallel lines; wherein the pattern helps to reduce mechanical breakage of the PV cell array.

In some embodiments, the micro PV cells and the pits separating them are arranged in the following pattern: (i) The first set of straight parallel lines intersecting (ii) the second set of straight parallel lines in a diagonal and non-perpendicular manner; wherein the pattern helps to reduce mechanical breakage of the PV cell array.

In some embodiments, the micro PV cells and the pits separating them are arranged to include at least one predetermined pattern that is non-linear; wherein the pattern helps to reduce mechanical breakage of the PV cell array.

In some embodiments, the pits are completely filled with a filler material that is directed upward from the lowest point of each pit to and flush with the top surface of the individual wafer.

In some embodiments, the pits are only partially, but not completely, filled with filler material that is directed upward from the lowest point of each pit toward the top surface of the individual wafer but does not reach the top surface of the individual wafer.

In some embodiments, the inner walls of the pit are coated with an interior coating material that coats the inner walls of the pit but does not completely fill the pit.

In some embodiments, the filler material has predetermined compressible characteristics that provide a particular level of flexibility to the array of PV cells.

In some embodiments, the wells of a first region of the PV cell array are partially or completely filled with a first filler material that provides a first level of flexibility to the first region of the PV cell array; wherein the wells of the second area of the PV cell array are partially or completely filled with a second, different filler material that provides a second, different level of flexibility to the second area of the PV cell array.

In some embodiments, a first region of the PV cell array has a first predetermined spatial pattern of PV microcells and pits that provides a first level of flexibility to the first region of the PV cell array; wherein a second region of the PV cell array has a second predetermined spatial pattern of PV microcells and pits that provides a different second level of flexibility to the second region of the PV cell array.

In some embodiments, a first region of the PV cell array has a first specific density of pits per unit area, the first specific density of pits providing a first level of flexibility to the first region of the PV cell array; wherein a second region of the PV cell array has a second, different specific density of pits per unit area, the second specific density of pits providing a second, different level of flexibility to the second region of the PV cell array.

In some embodiments, each pit has a specific depth that is at least 10% of the thickness of the single wafer; wherein the specific depth of each dimple helps to reduce the mechanical breakage of the PV cell array.

In some embodiments, each pit has a specific depth that is at least 25% of the thickness of the single wafer; wherein the specific depth of each dimple helps to reduce the mechanical breakage of the PV cell array.

In some embodiments, each pit has a specific depth that is at least 50% of the thickness of the single wafer; wherein the specific depth of each dimple helps to reduce the mechanical breakage of the PV cell array.

In some embodiments, each pit has a specific width in the range of 10% to 50% of the thickness of the single wafer; wherein the specific width of each dimple helps to reduce the mechanical breakage of the PV cell array.

In some embodiments, each pit has a specific width in the range of 10% to 25% of the thickness of the single wafer; wherein the specific width of each dimple helps to reduce the mechanical breakage of the PV cell array.

In some embodiments, the pits are topside pits formed downward with respect to a top surface of the single wafer and do not reach a bottom surface of the single wafer; wherein the PV cell array further comprises an additional pocket that is a bottom side pocket that extends upward from the bottom surface of the individual wafer toward the top surface of the individual wafer, but does not reach the top surface of the individual wafer; wherein the topside dimples and the bottom side dimples help to reduce mechanical breakage of the PV cell array.

In some embodiments, each topside pit has a first pit shape; wherein each bottom side pit has a different second pit shape; wherein the inclusion of (i) the topside dimples having a first dimple shape and (ii) the bottom side dimples having a second dimple shape in the same PV cell array helps to reduce mechanical breakage of the PV cell array.

In some embodiments, each topside pit stores, partially or completely, a first filler material; wherein each bottom side well stores partially or completely a different second filler material; wherein the inclusion of (i) the topside dimples with a first filler material and (ii) the bottom side dimples with a second filler material in the same PV cell array helps to reduce mechanical breakage of the PV cell array.

In some embodiments, the topside pits are arranged in a first spatial pattern; wherein the bottom side pits are arranged in a second, different spatial pattern; wherein the inclusion of (i) the top side dimples arranged in a first spatial pattern and (ii) the bottom side dimples arranged in a second spatial pattern in the same PV cell array helps to reduce mechanical breakage of the PV cell array.

In some embodiments, the topside pits are arranged to have a first density of pits per unit area; wherein the bottom side pits are arranged to have pits of a second, different density per unit area; wherein the inclusion of (i) the topside dimples arranged at a first density and (ii) the bottom side dimples arranged at a second density in the same PV cell array helps to reduce mechanical breakage of the PV cell array.

In some embodiments, each micro PV cell has a vertical thickness of less than one millimeter.

In some embodiments, each micro PV cell has a vertical thickness of less than 0.3 millimeters.

In some embodiments, at least some miniature PV cells in the array of PV cells have at least one external sidewall that is inclined in a non-perpendicular manner relative to the top surface of the individual wafer; wherein at least some miniature PV cells include sloped sidewalls to help reduce mechanical breakage of the PV cell array.

In some embodiments, at least some miniature PV cells in the array of PV cells have at least one curved outer sidewall; wherein at least some miniature PV cells include curved sidewalls that help reduce the mechanical breakage of the PV cell array.

In some embodiments, the miniature PV cells in the PV cell array are covered with a transparent protective top sheet.

In some embodiments, the micro PV cells in the PV cell array are covered with a transparent top sheet having an optical concentrator that concentrates light toward a specific active area of the micro PV cells.

In some embodiments, the micro PV cells in the PV cell array are mechanically interconnected to each other via a flexible support sheet; wherein the inclusion of the flexible support sheet aids in: (i) Reducing the mechanical breakage of the PV cell array, and (ii) increasing the mechanical flexibility of the PV cell array.

In some embodiments, each micro PV cell includes a positive electrode and a negative electrode to output a current generated by each of the micro PV cells; wherein the electrical conductor mesh electrically connects the micro PV cells and generates an aggregate electrical output.

In some embodiments, the pits are laser-cut trenches formed in specific locations of the wafer.

In some embodiments, the dimples comprise dimples formed in a corrugated manner.

In some embodiments, the pits comprise beam-based pits formed via a beam of light or radiation or laser.

In some embodiments, the pits comprise DRIE-based pits formed via Deep Reactive Ion Etching (DRIE).

In some embodiments, the pits include pits formed via dicing or cutting.

In some embodiments, the pits include pits formed via dicing or cutting, wherein the dicing or cutting is performed in at least two different directions.

In some embodiments, the pits include pits formed via dicing or cutting; wherein the dicing or cutting is performed in at least two different directions including at least one dimension that is not perpendicular to a plane holding electrical contacts of the micro PV cells.

In some embodiments, the pits include pits formed via dicing or cutting; wherein the dicing or cutting is performed in at least two different directions, including at least one curved or non-linear direction.

In some embodiments, each micro PV cell is a non-elongate micro PV cell; wherein the ratio between (i) the horizontal length of the top region of each micro PV cell and (ii) the vertical length of the top region of each micro PV cell is no greater than 2 to 1.

In some embodiments, the device is a non-planar solar panel.

In some embodiments, the device is the roof of a vehicle.

In some embodiments, the device is a roof of a building.

In some embodiments, the device is a roof tile.

In some embodiments, the device is a top or side panel of an apparatus selected from the group consisting of: unmanned aerial vehicles, aircraft, water craft, spacecraft, satellites.

In some embodiments, an apparatus includes a segmented Photovoltaic (PV) cell array comprised of a plurality of micro PV cells; wherein the array of PV cells comprises one of: (I) A single wafer segmented via a plurality of pits, (II) a portion of the single wafer segmented via a plurality of pits, (III) a set of two or more interconnected wafers segmented via a plurality of pits; wherein the wafer is a wafer selected from the group consisting of: (i) A composite metallized wafer having an underlying metallization layer, wherein each pit penetrates the entire non-metallization layer of the wafer, but does not penetrate the underlying metallization layer of the wafer; (ii) A non-metallized semiconductor wafer, wherein each pit penetrates 100% of the depth of the semiconductor wafer. Each pocket forms a physical depression separation between two adjacent micro PV cells that are still interconnected with each other, but only at some, but not all, of the heights of the two adjacent micro PV cells. The micro PV cells are mechanically and electrically connected to each other.

Some embodiments provide a flexible and/or crimpable and/or collapsible Photovoltaic (PV) cell or PV device having enhanced or improved mechanical impact absorption characteristics and having rebound or increased rebound or durability or increased durability against mechanical impact, bending, folding, crimping, mechanical impact or other mechanical forces; and is better able to withstand such mechanical shocks or impacts or forces without breaking and/or becoming damaged and/or without compromising its operational function.

In some embodiments, a PV cell or PV device comprises: a semiconductor body, which is at least partially (or entirely and exclusively) comprised of a semiconductor material (e.g., semiconductor substrate, semiconductor wafer), has a form factor including a top surface, a bottom surface, and at least one sidewall.

In some embodiments, the semiconductor body, and/or semiconductor substrate, and/or wafer or semiconductor wafer in which the gap or pocket or non-overrun gap is formed to dissipate and/or absorb mechanical shocks and impacts is freestanding or unsupported, and unsupported by any carrier or film or foil or metal film or metal foil or elastic film or elastic foil.

In some embodiments, the semiconductor body, and/or semiconductor substrate, and/or wafer or semiconductor wafer in which the gap or recess or non-overrun gap is formed to dissipate and/or absorb mechanical shocks and impacts does not require (and is not connected to, mounted on, mounted under, attached to) a carrier or carrier layer or a metal layer or film or foil or elastic layer or flexible foil or flexible layer or foldable film or foldable foil; instead, the integrated gaps or pockets or non-overrun gaps contained in the semiconductor wafer or substrate or body operate to dissipate and/or absorb mechanical shocks and impacts, and operate to provide resilience and non-fracture durability against mechanical shocks and impacts to the PV cells or PV devices, and operate to provide bending or flexing or flexible bending or folding or crimping or becoming flexible and/or foldable and/or crimpable capabilities to the PV cells or PV devices, relying solely on such gaps or pockets or non-overrun gaps of the semiconductor body or wafer or substrate itself, and without the need to mount or place or connect or attach or glue individual PV cells or microcells to (or under) a flexible foil or flexible film or other carrier or support layer.

In some embodiments, the semiconductor body, and/or semiconductor substrate, and/or wafer or semiconductor wafer in which the gap or recess or non-overrun gap is formed to dissipate and/or absorb mechanical shocks and impacts does not require (and is not connected to, mounted on, mounted under, attached to) a non-substrate layer and/or a non-substrate support layer and/or a non-substrate carrier layer and/or a non-substrate film or non-substrate foil and/or a non-substrate flexible layer and/or a non-substrate metal layer and/or a non-substrate fully conductive layer and/or a non-substrate rigid layer and/or a non-substrate flexible-rigid or rigid-flexible layer and/or a non-substrate insulating layer.

In some embodiments, the semiconductor body, and/or the semiconductor substrate, and/or the wafer or semiconductor wafer in which the gap or recess or non-overrun gap is formed to dissipate and/or absorb mechanical shocks and impacts does not require (and is not connected to, mounted on, mounted under, attached to) an amorphous layer and/or an amorphous support layer and/or an amorphous carrier layer and/or an amorphous film or an amorphous foil and/or an amorphous flexible layer and/or an amorphous metal layer and/or an amorphous fully conductive layer and/or an amorphous rigid layer and/or an amorphous flexible-rigid or rigid-flexible layer and/or an amorphous insulating layer.

In some embodiments, the semiconductor body, and/or semiconductor substrate, and/or wafer or semiconductor wafer in which the gap or recess or non-overrun gap is formed to dissipate and/or absorb mechanical shocks and impacts does not require (and is not connected to, mounted on, mounted under, attached to) a non-semiconductor layer and/or a non-semiconductor support layer and/or a non-semiconductor carrier layer and/or a non-semiconductor film or a non-semiconductor foil and/or a non-semiconductor flexible layer and/or a non-semiconductor metal layer and/or a non-semiconductor fully conductive layer and/or a non-semiconductor rigid layer and/or a non-semiconductor flexible-rigid or rigid-flexible layer and/or a non-semiconductor insulating layer.

In some embodiments, the semiconductor body, and/or semiconductor substrate, and/or wafer or semiconductor wafer integrally includes a set of non-overrunning gaps or "blind gaps" that only partially and incompletely penetrate to the wafer or substrate or semiconductor body, and that do not reach and do not leave or penetrate the wafer or substrate or semiconductor body on both sides or surfaces; and which is present only in or penetrates from one side of the wafer or substrate or semiconductor body, i.e. its top side or bottom side but not both, or its top surface or bottom surface but not both; the applicant has appreciated that this particular structure provides resilience against mechanical shocks and impacts and/or absorption and/or dissipation of mechanical shocks and impacts and/or provides some or all of the ability to be elastic and/or flexible and/or collapsible and/or to modularly present a non-planar or curved or convex or concave structure.

In some embodiments, portions of the semiconductor material (or semiconductor body or semiconductor wafer) located on opposite sides of, or immediately adjacent to, or abutting each such non-overrunning gap or "blind gap" or pocket, become at least partially movable and/or flexible and/or crimpable and/or foldable relative to each other and/or relative to the general surface of the PV cell or PV device; while the thin layer of semiconductor body or semiconductor substrate or wafer remains intact without gaps and pits and holes and "blind gaps" located below those non-overrunning gaps; and the lamina is thin enough to flex or curl or fold or at least partially change its three-dimensional structure from a fully planar surface to a non-planar surface or a partially curved structure; and due to the physical displacement or physical movement of the semiconductor body (or wafer or substrate) adjacent to each such non-overrunning gap they dissipate and/or absorb and/or withstand mechanical stresses and/or impacts and/or bumps and/or forces that may be (intentionally or unintentionally) applied to the PV cell or the PV device or the semiconductor body or wafer or substrate; without breaking, or splitting, or without producing broken or singulated or fully separated pieces; and those non-overrun gaps or pits or "blind gaps" within the semiconductor body or substrate or wafer operate as crack growth inhibitors or crack prevention mechanisms or crack tolerance mechanisms.

In some embodiments, the non-overrunning gap or pit or "blind gap" penetrates no more than 99% of the entire thickness of the semiconductor substrate or body or wafer; and remain intact and unpenetrated and unsingulated and unseparated to maintain the entire structure of a single unified semiconductor substrate (or wafer or body), which structure is still a single unsingulated/unpartited/inseparable unit or PV device (rather than a collection of discrete/individual micro PV cells that are then connected via an additional flexible layer or support film or foil).

In some embodiments, the non-overrunning gap or pit or "blind gap" penetrates no more than 98% of the entire thickness of the semiconductor substrate or body or wafer; or to not more than 97% of the overall thickness of the semiconductor substrate or body or wafer; or to not more than 96% of the entire thickness of the semiconductor substrate or body or wafer; or to not more than 95% of the entire thickness of the semiconductor substrate or body or wafer; or to no more than 90% of the overall thickness of the semiconductor substrate or body or wafer; or to not more than 85% of the entire thickness of the semiconductor substrate or body or wafer; or to no more than 80% of the overall thickness of the semiconductor substrate or body or wafer; or to no more than 75% of the overall thickness of the semiconductor substrate or body or wafer; or to no more than 66% of the entire thickness of the semiconductor substrate or body or wafer; or to no more than 50% of the overall thickness of the semiconductor substrate or body or wafer. In some embodiments, the non-overrun gap or "blind gap" or pit as described above remains intact in the remaining thickness and is not penetrated and is not singulated and not separated. The applicant has appreciated that for certain implementation purposes of certain types of PV devices or PV cells, the particular ranges of penetration depths described above may be particularly suitable for providing mechanical shock absorption and/or mechanical force dissipation and/or mechanical resilience and/or crack suppression mechanisms and/or providing the ability for the entire PV cell or the entire PV structure to become collapsible and/or crimpable and/or flexible without breaking and/or cracking and/or without functional damage or functional degradation.

In some embodiments, the non-overrunning gap or pit or "blind gap" penetrates at least 50% but not more than 99% of the entire thickness of the semiconductor substrate or body or wafer; or penetrate to at least 66% but not more than 99% of the entire thickness of the semiconductor substrate or body or wafer; or to at least 75% but not more than 99% of the entire thickness of the semiconductor substrate or body or wafer; or penetrate to at least 80% but not more than 99% of the entire thickness of the semiconductor substrate or body or wafer; or penetrate to at least 85% but not more than 99% of the entire thickness of the semiconductor substrate or body or wafer; or to at least 90% but not more than 99% of the entire thickness of the semiconductor substrate or body or wafer; or to at least 95% but not more than 99% of the entire thickness of the semiconductor substrate or body or wafer.

In some embodiments, the non-overrunning gap or pit or "blind gap" penetrates at least 50% but not more than 95% of the entire thickness of the semiconductor substrate or body or wafer; or penetrate to at least 66% but not more than 95% of the entire thickness of the semiconductor substrate or body or wafer; or to at least 75% but not more than 95% of the entire thickness of the semiconductor substrate or body or wafer; or penetrate to at least 80% but not more than 95% of the entire thickness of the semiconductor substrate or body or wafer; or penetrate to at least 85% but not more than 95% of the entire thickness of the semiconductor substrate or body or wafer; or to at least 90% but not more than 95% of the entire thickness of the semiconductor substrate or body or wafer.

In some embodiments, the non-overrunning gap or pit or "blind gap" penetrates at least 50% but not more than 90% of the entire thickness of the semiconductor substrate or body or wafer; or to at least 66% but not more than 90% of the entire thickness of the semiconductor substrate or body or wafer; or to at least 75% but not more than 90% of the entire thickness of the semiconductor substrate or body or wafer; or penetrate to at least 80% but not more than 90% of the entire thickness of the semiconductor substrate or body or wafer; or to at least 85% but not more than 90% of the entire thickness of the semiconductor substrate or body or wafer.

The applicant has appreciated that for certain implementation purposes of certain types of PV devices or PV cells, the specific values or ranges of values of penetration depth or penetration thickness described above may be particularly suitable for providing mechanical shock absorption and/or mechanical force dissipation and/or mechanical resilience and/or crack suppression mechanisms and/or providing the ability for the whole PV cell or the whole PV structure to become collapsible and/or crimpable and/or flexible without breaking and/or cracking and/or without functional damage or functional deterioration.

In some embodiments, the resulting PV cell or PV device is flexible and/or rollable and/or foldable and/or bendable, and free-standing and unsupported and/or carrier-free; and have enhanced or improved mechanical shock absorbing properties due to having those grouped gaps or "blind gaps" or pits or non-overrun gaps in the semiconductor material or substrate or body or wafer.

In some embodiments, the flexible and/or rollable and/or foldable and/or bendable PV cell is comprised of a single semiconductor substrate or single semiconductor wafer or single semiconductor body or single semiconductor layer that is segmented into adjacent segments or adjacent areas or adjacent regions by those sets of non-overrunning gaps or "blind gaps" or pits that are placed on only one side of the semiconductor body (or wafer or substrate); and does not penetrate completely to the other side or surface nor "expose" or appear on the other side of the semiconductor body or substrate or wafer; and without complete singulation, complete separation, complete singulation, and complete formation of a full depth barrier or any omnidirectional gap between any two adjacent portions or regions of a semiconductor body or substrate or wafer.

In some embodiments, at least some of those pits or gaps or "blind gaps" or non-overrun gaps located only on one side of the semiconductor body or wafer or substrate contain or are (completely or at least partially) filled with gap filling material; has force absorbing and/or mechanical force absorbing and/or material toughening properties, which provides mechanical shock absorption and/or dissipation, and which is composed of a material providing chemical and/or thermal and/or mechanical durability. Such filler materials may include one or more of the following, or a combination or mixture of two or more of the following: polyolefin elastomer (POE), and/or Thermoplastic Polyolefin (TPO), and/or Ethylene Vinyl Acetate (EVA), and/or Thermoplastic Polyurethane (TPU), and/or one or more flexible or semi-flexible thermoplastics and/or elastomers and/or polymers or other suitable fillers or additives having impact absorbing or impact absorbing properties.

In some embodiments, the set of non-overrunning gaps within the semiconductor body or wafer or substrate extend in a pattern that forms a PV cell having segments or regions or areas of the semiconductor body or wafer or substrate that are not fully isolated from each other and that have no complete barrier or complete space or fully separated cavities therebetween.

In some embodiments, each segment or region or area of the semiconductor body or wafer or substrate is adjacent or contiguous with a gap or pit or "blind gap" or non-overrunning gap, which includes at least two electrode contacts connected to different sides of the PN junction within the respective segment (or area or region) of the semiconductor body or wafer or substrate or PV cell or PV device. In some embodiments, each electrode contact is electrically connected with a different side of the PN junction within a respective segment of the semiconductor body.

In some embodiments, each segment or region or area of a PV cell or PV device or semiconductor body or wafer or substrate is adjacent to (or surrounded by) two or three or four or more such gaps or "blind gaps" or pits, having a top side surface that is a polygon selected from the group consisting of: (a) square; (b) rectangular; (c) decagons; (d) hexagonal; (e) heptagons; and (f) octagons. Other suitable structures may be used. In some embodiments, the length of each side of the polygon is optionally in the range of 0.1 to 3 millimeters, or 0.1 to 5 millimeters, or 0.1 to 6 millimeters, or 0.1 to 10 millimeters, or 0.5 to 10 millimeters, or 1 to 6 millimeters, or 0.5 to 5 millimeters, or other suitable size or dimension.

In some embodiments, the bottom surface of each of those segments or regions or areas of the semiconductor body or wafer has the same shape, but has different sides than its top surface (e.g., such that each surface is formed as the same polygon but is different in size or side length; e.g., a smaller top side rectangular surface, and a larger bottom side rectangular surface).

In some embodiments, the thickness of each segment or region or area of the semiconductor body or wafer or substrate, from the top surface to the bottom surface, is in the range of 0.01 to 5 millimeters, or in the range of 0.01 to 6 millimeters, or in the range of 0.01 to 10 millimeters, or in the range of 0.01 to 3 millimeters, or in the range of 0.05 to 10 millimeters, or in the range of 0.05 to 5 millimeters, or in the range of 0.1 to 10 millimeters, or in the range of 0.01 to 5 millimeters, or in the range of 0.1 to 6 millimeters, or in other suitable values.

In some embodiments, at least one sidewall of at least one such segment or region or area of the semiconductor body or wafer or substrate (or PV cell or PV device) is sloped with respect to the top surface, and/or has a curved surface.

In some embodiments, the sidewalls of at least one segment or region or area of the semiconductor body or wafer or substrate, i.e., the sidewalls adjacent those pits or gaps or "blind gaps" or non-overrun gaps, are coated with a material that is different from the material forming those segments or regions or areas (of the semiconductor body or wafer or substrate).

In some embodiments, the sidewalls of at least one such segment or region or area of the semiconductor body or wafer or substrate are coated with a passivation material or passivation coating; for example, to increase PV efficiency, and/or reduce or prevent recombination, and/or promote charge carrier selectivity, and/or prevent or reduce undesired recombination of photogenerated electron-hole pairs, and/or achieve other benefits.

In some embodiments, at least a portion of the sidewalls of at least one such segment or region or area of the semiconductor body or wafer or substrate is coated with an electrically insulating material or coating.

In some embodiments, at least a portion of the sidewalls of at least one such segment or region or area of the semiconductor body or wafer or substrate is coated with a compound generated by reacting the PV cell body material (or semiconductor substrate or wafer) with a substance selected from the group consisting of: (a) oxygen, (b) ammonia, (c) nitrogen, (d) hydrogen, (e) argon, (f) a compound of two or more of said materials, (g) a mixture of two or more of said materials.

In some embodiments, each electrode contact is connected to a separate flexible conductor that interconnects the corresponding electrode contacts on separate segments (or areas) of the semiconductor body or substrate or wafer or PV cell or PV device.

In some embodiments, the PV cell or PV device may further comprise a transparent polymer laminate or lamination layer on the surface of the one side of each such segment or region or area of the semiconductor body or substrate or wafer or PV cell or PV device; and/or transparent top sheets and/or encapsulants having optical concentrators located over those segments or areas of the semiconductor body or substrate or wafer that utilize the PV effect for energy generation, and such concentrators may improve or increase energy generation. In some embodiments, an optical concentrator is formed on the transparent top sheet by embossing, chemical etching, micromachining, laser ablation, and/or other means during or after attaching the transparent polymer laminate to the PV cell or PV device. In some embodiments, the optical concentrator is configured to direct sunlight or ambient light from an optimized oblique angle to the active area of a respective segment (or area or region) of the semiconductor body or wafer or substrate or PV cell or PV device by redirecting or steering or focusing or otherwise directing the light to one or more inactive portions (or portions or areas or sidewalls or regions) of the same or nearby segment (or area) of the semiconductor body or wafer or substrate or PV cell or PV device.

In some embodiments, each segment or region or area of the semiconductor body or wafer or substrate (or PV cell or PV device) includes at least: a first electrode contact located beneath each such segment or area or region of the semiconductor body or wafer or substrate; a second electrode contact located over each such segment or area or region of the semiconductor body or wafer or substrate, wherein each electrode contact is electrically connected to a different side of the PN junction within the corresponding segment (or area or region) of the semiconductor body or wafer or substrate.

Some embodiments provide a single PV cell or a single PV device or a single PV article, consisting of a single semiconductor substrate or a single semiconductor wafer or a single semiconductor body; it is monolithic, e.g., is currently and always a single item or a single article or a single component formed and held as a single component; and not as a collection of two or more individual units, or as a collection of two or more singulated or fully separated or fully discrete or fully interstitial units, which units are arranged or placed together in proximity to each other but on a metal foil or metal film or a flexible or elastic foil or film.

In some embodiments, a single PV cell or single PV device or single PV article is not a collection of, and is not an arrangement of, and is not an assembly of, a plurality of discrete PV cells, each of which has its own discrete and fully separated semiconductor substrate and/or its own discrete and fully separated semiconductor wafer and/or its own discrete and fully separated semiconductor body, and is merely placed to be assembled or arranged together (or mounted together, or connected together) above or below a flexible foil or flexible film; however, a single PV cell or single PV device or single PV article has a single unified semiconductor substrate or semiconductor body or semiconductor wafer that is common to and shared by all areas or regions or portions of the single PV cell, including (in the single unified semiconductor substrate or wafer or body) those pits or gaps or "blind gaps" or non-overrun gaps that penetrate only from one side (rather than from both sides), that do not pass completely through, nor do they reach completely to the other side of the single unified semiconductor substrate or wafer or body.

According to some embodiments, the flexible PV cell or PV device may be, or may include, a single crystalline PV cell or solar panel or solar device, a polycrystalline PV cell or solar panel or solar device, a flexible PV cell or PV device that is an Interdigitated Back Contact (IBC) solar cell with the semiconductor wafer and the set of non-overrunning gaps, and/or other suitable types of PV cells or PV devices.

Some of the portions described above and/or discussed herein may relate to regions or segments or areas of a semiconductor body or substrate or wafer (or PV cell or PV device); however, those "segments" remain in contact with each other and/or are inherently interconnected and/or not separated from each other because those "segments" remain connected by at least a thin portion or thin bottom surface of the semiconductor substrate (or wafer or body) that remains and includes at least 1% (or at least 2%, or at least 3%, or at least 5%, or at least 10%, or at least 15%, or at least 20%, or at least 25%, or at least 33%, but not more than 50%, or not more than 40%) of the entire depth or the entire thickness (or maximum thickness or depth) of the semiconductor substrate or body or wafer; because those "segments" are still connected at their bottoms by such a lamina, and those "segments" have a non-overrunning gap or "blind gap" or pit between (or among) them, separating those "segments", but not completely dividing or completely destroying or completely isolating any two such adjacent "segments" from each other.

Some embodiments provide a method of producing or manufacturing a flexible and/or crimpable and/or bendable Photovoltaic (PV) cell or PV device having enhanced mechanical impact absorption and/or mechanical force dissipation and/or rebound on mechanical impact characteristics. The method may include producing or obtaining or receiving a semiconductor body or substrate or wafer, at least partially composed of a semiconductor material or substrate or wafer, having a form factor including a top surface, a bottom surface, and at least one sidewall. The method further comprises the steps of: creating or fabricating groups of non-overrunning gaps within the semiconductor body of the semiconductor material by dicing or grooving or dicing or etching or scraping or cutting or laser dicing or laser etching or other suitable operations; wherein portions of semiconductor material on opposite sides of a respective non-overrunning gap become relatively movable while a thin layer of the semiconductor body of the semiconductor material remains beneath the non-overrunning gap and is thin enough to flex and dissipate mechanical stresses and absorb mechanical shocks applied to the semiconductor body due to physical displacement; the method thus includes creating the set of non-overrun gaps within the semiconductor body that functions or acts as a crack growth inhibitor and provides mechanical impact resilience to the PV cell; and the PV cells produced by the method are flexible and crimpable, and are freestanding and carrier-free and unsupported, and have enhanced mechanical shock absorption and/or mechanical shock dissipation and/or mechanical rebound characteristics due to the presence of the set of non-overrunning gaps in the semiconductor material; wherein the flexible and rollable PV cells are comprised of a single semiconductor substrate segmented into segments by the set of non-overrunning gaps placed on only one side of the semiconductor body, and wherein the method comprises placing or slotting or drilling or making or creating the set of non-overrunning gaps on only one side (e.g., the top side, or the sunlight-facing side or the light-absorbing side, or the sunlight-absorbing side) of the semiconductor body or substrate or wafer; and the method does not include, or the method excludes or avoids, creating similar other gaps or pits on or in the other side; and the method does not include, or the method excludes or avoids, singulating or splitting or breaking or completely separating individual semiconductor substrates or wafers or bodies into two (or more) pieces or discrete singulated areas that are completely separated from each other via the entire space along the entire depth (or height) of the semiconductor substrate or wafer or body. The method may further comprise: a gap filler material having force absorbing properties and/or material toughening properties is placed or filled or coated or injected or added or deposited into those non-overrun gaps to provide mechanical shock absorption, wherein the gap filler material is formed of a material that provides chemical and/or thermal and/or mechanical durability.

In some embodiments, a non-overrunning gap or "blind gap" or a pit or slot or trench is introduced and formed only at a first side or first surface of a semiconductor substrate or body or wafer, and not at opposite (or both) surfaces thereof.

In some embodiments, a non-overrunning gap or "blind gap" or a pit or slot or trench is introduced and formed only at a first side or first surface of the semiconductor substrate or body or wafer, which is intended to be directed towards sunlight or light, or the active side of a PV device or PV cell, or to be the power generating side or surface that generates power from incident sunlight or light, or from the PV effect; while the non-overrunning gap or "blind gap" or pit or slit or groove is not formed at the other (e.g., opposite, inactive) side or surface (e.g., the side not intended to face sunlight or light, or the side not intended to generate electricity according to the PV effect).

In some embodiments, no overrunning gap or "blind gap" or pit or slot or trench is introduced and is not formed at a side or surface of the semiconductor substrate or body or wafer that is intended to be directed towards sunlight or light, or the active side of a PV device or PV cell, or intended to be the power generating side or surface that generates power from incident sunlight or light, or from the PV effect; while those non-overrunning gaps or "blind gaps" or pits or slits or grooves are not formed at the other (e.g., opposite, inactive) side or surface (e.g., the side not intended to face sunlight or light, or the side not intended to generate electricity according to the PV effect). Some implementations with such structures may advantageously provide mechanical shock absorption and mechanical force dissipation capabilities, but may also provide or maintain or achieve higher levels of PV-based power generation, as the gaps do not reduce the area of the light-exposed or light-facing side of the PV device.

In other embodiments, non-overrun gaps or "blind gaps" or pits or slits or trenches are introduced and formed at both sides or at both surfaces of the semiconductor substrate or body or wafer; however, there is an offset between the gaps on the first side and the gaps on the second side, those gaps crossing both sides of the semiconductor wafer or substrate or body in a zig-zag pattern; for example, a first gap located at the left top surface; then, a second gap which is positioned on the right bottom surface of the first gap and is not overlapped with the first gap at all; then, a third gap located on the right top surface of the second gap and not overlapping the second gap at all; then, a fourth gap located on the right bottom surface of the third gap and not overlapping the third gap at all; etc. In such a structure, for example, any single point or any single location or any single area of the remaining semiconductor wafer or substrate or wafer may have a gap or pit or "blind gap" on only one of its sides, but not on both sides.

In still other embodiments, non-overrun gaps or "blind gaps" or pits or slits or trenches are introduced and formed at both sides or both surfaces of the semiconductor substrate or body or wafer; the gaps on the first side and the gaps on the second side do not necessarily have an offset or zigzag pattern; but by implementing any other suitable structure or pattern that still provides mechanical impact resilience while still maintaining a sufficiently thin semiconductor substrate or body or wafer layer that is not removed and has resilience to mechanical impact and mechanical forces due to the pits or gaps around it.

Some embodiments include flexible and/or crimpable and/or foldable and/or bendable Photovoltaic (PV) cells having enhanced mechanical impact absorbing properties, the PV cells comprising: a freestanding and carrier-free semiconductor wafer having a thickness and having a first surface and having a second surface opposite the first surface; a set of non-overrun gaps within the semiconductor wafer, wherein each non-overrun gap penetrates from a first surface of the semiconductor wafer toward a second surface of the semiconductor wafer but to a depth of between 80% and 99% (or between 85% and 99%, or between 88% and 99%, or between 90% and 99%, or between 92% and 99%, or between 95% and 99%) of a thickness of the semiconductor wafer and does not reach the second surface; wherein each non-overdrive gap does not completely penetrate the entire thickness of the semiconductor wafer, wherein the semiconductor wafer retains at least 1% of the thickness of the semiconductor wafer as a thin layer of a complete and unpenetrated semiconductor wafer that remains intact and unpenetrated by the non-overdrive gap, wherein the thin layer of the complete and unpenetrated semiconductor wafer absorbs and dissipates mechanical forces.

In some embodiments, each non-overrunning gap is completely filled with one or more filler materials that absorb mechanical shock.

In some embodiments, between 50% and 99% of the volume of each non-overrunning gap is filled with one or more filler materials that absorb mechanical shock.

In some embodiments, between 1% and 50% of the volume of each non-overrunning gap is filled with one or more filler materials that absorb mechanical shock.

In some embodiments, the flexible PV cell is an integral part of a vehicle roof or body portion. In some embodiments, the flexible PV cell is an integral part of the vessel roof or vessel body portion. In some embodiments, the flexible PV cell is an integrated part of a floating solar device. In some embodiments, the flexible PV cell is an integrated part of a device selected from the group consisting of: unmanned aerial vehicle, aircraft body part, satellite, spacecraft, military equipment, military vehicle, tank, armored weapons (APC), military aircraft, military vessel. In some embodiments, the flexible PV cell is an integrated part of a building solar roof or a tile with PV functionality. In some embodiments, the flexible PV cell is an integral part of a helmet, or a wearable product, or a solar device that provides power to a hiker's portable device.

In some embodiments, the first surface is located on a first side of the flexible PV cell that faces the light source and uses the photovoltaic effect to generate electricity from the light; wherein the second surface is located on an opposite second side of the flexible PV cell that is not facing the light source and does not generate electricity from the light; wherein each non-overrunning gap penetrates from the first side to the second side but does not reach the second side; wherein each non-overrunning gap reaches a depth of between 80% and 99% of the distance between the first surface and the second surface.

In some embodiments, the first surface is located on a first side of the flexible PV cell that is not facing the light source and does not generate electricity from the light; wherein the second surface is located on an opposite second side of the flexible PV cell that faces the light source and uses the photovoltaic effect to generate electricity from the light; wherein each non-overrunning gap penetrates from the first side to the second side but does not reach the second side; wherein each non-overrunning gap reaches a depth of between 80% and 99% of the distance between the first surface and the second surface.

In some embodiments, the flexible PV cells are inter-digital back contact (IBC) solar cells having the semiconductor wafer with the set of non-overrunning gaps.

In some embodiments, the flexible PV cell is integrated using a process selected from the group consisting of: injection molding process, compression molding process, autoclave process, wet lamination process, rotational molding process, blow molding process, resin Transfer Molding (RTM) process, thermoforming process, sheet molding process (SMC), prepreg Compression Molding (PCM) process, vacuum molding process, reactive injection molding process, calendaring process, batch lamination process, semi-continuous lamination process, roll-to-roll lamination process, dual tape lamination process.

In some embodiments, a method comprises: manufacturing flexible and/or crimpable and/or collapsible and/or bendable Photovoltaic (PV) cells with enhanced mechanical impact absorbing properties by performing: creating a freestanding and carrier-free semiconductor wafer having a thickness and having a first surface and having a second surface opposite the first surface; creating a set of non-overrun gaps within the semiconductor wafer by penetrating each non-overrun gap from a first surface of the semiconductor wafer to a second surface of the semiconductor wafer to a depth of between 80% and 99% of a thickness of the semiconductor wafer and not reaching the second surface; and by preventing each non-overrun gap from penetrating completely through the entire thickness of the semiconductor wafer, and by keeping the semiconductor wafer at least 1% of the thickness of the semiconductor wafer as a thin layer of a complete and non-penetrated semiconductor wafer that remains intact and non-penetrated by the non-overrun gap; wherein the thin layer of the intact and non-penetrated semiconductor wafer absorbs and dissipates mechanical forces.

In some embodiments, the method comprises: each non-overrunning gap is completely filled with one or more filler materials that absorb mechanical shock.

In some embodiments, the method comprises: at least 50% of the volume of each non-overrunning gap is partially filled with one or more filler materials that absorb mechanical shocks.

In some embodiments, the method comprises: the non-overrun gaps are each not filled in part by more than 50% by volume with one or more filler materials that absorb mechanical shocks.

In some embodiments, the method comprises: each non-overrun gap is completely filled with one or more fill materials that provide thermal durability to the semiconductor wafer.

In some embodiments, the method comprises: at least 50% of the volume of each non-overrun gap is partially filled with one or more fill materials that provide thermal durability to the semiconductor wafer.

In some embodiments, the method comprises: partially filling not more than 50% of the volume of each non-overrun gap with one or more fill materials that provide thermal durability to the semiconductor wafer.

In some embodiments, an apparatus includes a segmented Photovoltaic (PV) cell or cell array having a plurality of sub-regions or micro-sub-regions. PV cells or cell arrays include a single wafer or single substrate or single semiconductor substrate segmented via a plurality of pits or non-overrunning gaps or "blind gaps". Each pit penetrates down (or up, from the bottom side of the solar cell; from the "back-positive side" to the "positive-facing side" of the solar cell) to some depth, or most of the depth, or at least 75% of the depth, or 75% to 99% of the depth of the single wafer or single substrate or single semiconductor substrate, but not through the entire 100% of the depth. Each pit or non-overrun gap or "light emitting gap" begins at a first surface of a single wafer or single substrate or single semiconductor substrate. Each pit creates a physical gap or segment between two adjacent sub-areas, but does not completely separate their common wafer or substrate layers from each other. In the final product, the sub-regions are still mechanically and electrically connected to each other via a thin layer of a single wafer or a single substrate or a single semiconductor substrate, which is not divided, nor is completely penetrated via any pits or any "light emitting gaps". In some embodiments, the top surface area of each sub-region is less than one square centimeter; or in the range of 0.1 to 1 square millimeter. The single wafer or single substrate or single semiconductor substrate is segmented via a plurality of such pockets and such pockets are included in the sub-regions to inhibit or reduce mechanical breakage of the solar cell or PV device and/or to provide resilience or mechanical resilience to the solar cell or PV device and/or to assist in absorbing and/or dissipating mechanical shock and/or mechanical force and/or to prevent or reduce breakage of the solar cell or PV device or PV cell and/or to render the solar cell or PV device or PV cell crimpable and/or foldable and/or flexible and/or semi-flexible.

According to some embodiments, semiconductor devices are built on semiconductor substrates by processing the material of the substrate body in various ways, such as etching, doping, reactive coating and/or surface deposition. Various devices such as transistors, integrated circuits, processors, and Photovoltaic (PV) cells or solar panels may be produced on (or by using) a semiconductor substrate; such a substrate may include all or a portion of a semiconductor wafer as a substrate source.

According to some embodiments, the semiconductor wafer and the semiconductor substrate are used interchangeably. They may be made of brittle crystal type materials, such as silicon, gallium arsenide, etc., for example. The applicant has therefore appreciated that conventional PV devices made from these materials are generally prone to breakage when subjected to stress or when subjected to physical impact.

The applicant has appreciated that these drawbacks necessitate a great deal of packaging and protection and that the device is susceptible to breakage even during handling, manufacture and/or transport. Applicant has appreciated that this is more pronounced in full wafer scale applications (e.g., PV panels or cells or devices) where the semiconductor substrate may be 5 or 6 inches wide.

Accordingly, applicants have recognized a need in the semiconductor and PV device arts for flexible and/or resilient semiconductor wafers or semiconductor substrates with enhanced physical spring back characteristics, as well as methods and systems for producing such devices.

Applicants have recognized a need in the art of PV production for mechanically resilient and/or flexible semiconductor PV substrates, PV devices having enhanced physical resilience characteristics, and methods and systems for producing the same.

Some embodiments may be used in conjunction with various types of solar cells or solar panels or PV cells or PV panels or PV devices. For example, such solar cells or PV cells may be electrical devices that directly convert the energy of light or photons into electrical energy by the PV effect. In some embodiments, the solar cell is configured as a large area p-n junction made of silicon. In other embodiments, the solar cell may be formed as (or use) a thin film, such as cadmium telluride (CdTe), copper indium gallium selenide (CIGS or CIS), organic solar cells, dye sensitized solar cells, perovskite solar cells, quantum dot solar cells, and the like.

In some embodiments, the solar cell operates as follows: (1) Photons in light or sunlight strike the solar panel and are absorbed by semiconductor materials such as silicon; (2) Electrons are excited by photons from the current molecular/atomic orbitals in the semiconductor material; (3) Once excited, the electrons can dissipate energy as heat and return to their orbit or through the cell until it reaches the electrode; (4) An electrical current flows through the material to offset the potential and the current is captured. Chemical bonding of the battery material is critical to this process; silicon may be used for two regions, one of which is doped with boron and the other of which may be doped with phosphorus. These regions have different chemical properties and different charges, which then act to drive and direct electron current to the associated electrode.

In some embodiments, the solar cell array operates to convert solar energy into a usable amount of Direct Current (DC) current. Individual solar cells or solar cell devices may be combined to form a module or "solar panel". In some embodiments, an inverter unit or other dc-to-AC converter unit may convert dc current or dc power from a solar panel into Alternating Current (AC) or AC power.

Applicants have appreciated that many conventional silicon-based solar panels are heavy and/or rigid and/or have a large form factor; and, as such, applicants have appreciated that their use is limited to certain applications where weight, shape, form factor, volume, and/or accessibility are constrained.

Furthermore, the applicant has appreciated that conventional PV modules or panels can also be expensive to transport and install and are prone to fracture or crack or become damaged when mechanical forces are applied. Applicant has appreciated that flexible and/or mechanically resilient and/or durable and/or crimpable solar panels or PV cells or PV panels, optionally having any length that may be provided as a roll, may address many of these issues and may provide various advantages. Applicants have appreciated that there is a need for a low cost and improved flexible solar panel or PV device or power generation surface that has mechanical resilience and improved mechanical and operational durability.

Some embodiments may produce a solar cell or PV device that is flexible and/or crimpable and/or foldable and/or resilient to mechanical shock and/or mechanically durable, each such sub-region maintaining PV function by segmenting or sectioning it into sub-regions that pass through non-overrunning gaps or pits or "blind gaps"; by introducing non-overrun gaps or non-overrun pits or partial gaps or "blind gaps" in the semiconductor wafer or semiconductor substrate; such that a thin layer of the semiconductor substrate or wafer remains (e.g., having a thickness of 0.1% to 20% of the entire height of the solar panel or PV cell or PV device) and interconnects (mechanically) all such sub-regions; and such an array of multiple sub-areas is made flexible and/or mechanically resistant and/or resilient to mechanical shock, and/or such "blind gaps" and/or non-overrunning pockets dissipate and/or absorb such mechanical shock and mechanical stress and/or help prevent the PV cells from breaking or cracking or becoming operational damaged.

In some embodiments, the solar cell or solar panel or PV device has two surfaces or sides: (A) The first surface or side, referred to as the "sunny surface" or "sunny side", or the "light absorbing surface" or "light absorbing side", or the "light facing surface" or "light facing side"; which is the side or surface intended to face the sun or light source, or the side or surface configured to absorb sunlight or light and convert such absorbed light into electric charge or electricity or current or voltage; and (B) a second surface or side, referred to as a "non-sunward surface" or "non-sunward side", or a "back-cationic surface" or "back-cationic side", or a "non-light absorbing surface" or "non-light absorbing side", or a "non-light facing surface" or "non-light facing side"; which is a side or surface not intended to face sunlight or the sun or a light source, or a side or surface opposite and/or remote from the "sunny side", or a side or surface not configured to absorb sunlight or light for conversion to electrical charge or electricity or current or voltage. In some embodiments, the solar cell or solar panel or PV device is thus one-sided or single-sided, such that it can only absorb light through its "sunny side" rather than through its "back-sunny side" and convert it into electricity.

In other embodiments, the solar cell or solar panel or PV device has two surfaces or sides; wherein each of them is, or can be considered, or configured to be operable "sunny side" or "sunny surface" away from each other in opposite directions; such that the solar cell or solar panel or PV device is double-sided or double-sided so that it can absorb and/or transmit light through each of its two opposing surfaces or two opposing sides and convert it into electricity. Such bifacial PV devices may be suitable for situations where sunlight or light is expected or intended to reach the PV device from two or more directions, or from directions that are not perpendicular to one surface of the PV device; for example, in PV devices intended to be mounted substantially perpendicular to the ground and possibly thus absorb sunlight or light from both sides thereof at different times of the day, or in PV devices intended to move or rotate or swivel or otherwise change their spatial orientation due to movement or for other reasons.

In some embodiments, the sectioning or sectioning of the solar cell or PV device, or the introduction of such non-overrunning gaps or pits or "blind gaps", is performed on (or from) a single side or direction; for example, only on the "non-sunny side", or only on the side or surface not intended to face the sun or light source to absorb light therefrom, only on the side or surface opposite the "sunny side" or light absorbing side.

In some embodiments, the top surface of the PV device or solar cell is the "sunny side" intended to face the light source and operable to convert light into electricity; the charge (negative or positive) generated by the PV effect is collected or concentrated and then transported through the top-side wire set on top of the top surface (positive side). At the same time, charges of opposite polarity (positive or negative, respectively) are collected or accumulated there and then transported through a separate bottom side conductive set located below the bottom surface (back-positive side).

For example, in some embodiments, the "sunny side"/topside surface of the PV cell generates a positive charge that is collected or concentrated and then transported through the topside lead set; while at the same time the "back-positive"/bottom side surface of the PV cell produces a negative charge that is collected or concentrated and then transported through the bottom side lead set.

In other embodiments, for example, the "sunny side"/topside surface of the PV cell produces a negative charge that is collected or concentrated and then transported through the topside lead set; while at the same time the "back-positive"/bottom side surface of the PV cell generates a positive charge that is collected or concentrated and then transported through the bottom side lead set.

In some embodiments, the non-overrunning gap or pit or "blind gap" is located only on the "back-sun side" such that it begins at the bottom surface (back-sun side) of the solar cell or PV device, and they penetrate upward toward the top surface (i.e., to the sun side) of the PV device, but do not reach the top surface; and they penetrate upwards at least 80% and not more than 99.9% of the entire depth of the semiconductor wafer or substrate, and they leave a thin layer of the semiconductor wafer or substrate that is not penetrated, the thin layer comprising at least 0.1% (or at least 1%; but not more than 20%; or in some embodiments not more than 10% or 5%) of the entire depth of the semiconductor wafer or substrate.

Thus, the resulting PV cell or solar panel may have numerous sub-regions, which consist of interconnected "slices" or polygons or portions of the original PV cell, or may be rectangular, square, triangular or polygonal regions; wherein each pair or group of nearby or adjacent "slices" are still mechanically interconnected by a thin remaining portion or layer of the original semiconductor wafer or substrate that is not penetrated by the segmented pits or "light emitting gaps" that are non-overrunning gaps.

The dimensions of each sub-region of the solar cell or PV device may range from sub-millimeters to a few centimeters. In some embodiments, the surface area of each sub-region is in the range of 0.1 to 1.0 square millimeters; or in the range of 1 to 10 square millimeters; or in the range of 0.1 to 10 square millimeters; or in the range of 1 to 100 square millimeters; or in the range of 0.1 to 100 square millimeters; other suitable value ranges may be used.

In some embodiments, the sectioning, singulation, or segmentation of the solar cell or PV device, or the introduction of non-overrunning pits or "blind gaps", may be performed by one or more suitable methods; for example, mechanical dicing, laser cutting, laser etching, chemical etching, water jet, chemical process, mechanical process, physical process, use of a blade or knife or mechanical cutter, use of laser-based cutting or etching, use of chemical ablation, and the like.

After the solar cell or PV device is segmented, singulated or segmented into sub-areas, or a non-overrunning pit or "blind gap" is introduced, each surface, i.e. the top surface (sunny side) and the bottom surface (dorsal side), has its own adjacent sub-areas, which are electrically connected to each other in series and/or parallel manner to provide an increase or concentration of voltage and/or current, and/or to provide or restore the PV function of a larger area of the solar cell as an independent PV entity.

In some embodiments, all or substantially all sub-regions of the top surface (to the sun side) of a particular PV device or wafer or semiconductor substrate generate charge (e.g., charge having the same polarity; such as negative or positive) and they are electrically connected or interconnected by a top-side wire set or array or mesh; similarly and respectively, all or substantially all sub-regions of the bottom surface (back-positive side) of the particular PV device or wafer or semiconductor substrate generate a charge (e.g., a charge of the same polarity opposite to that of the positive or top surface; positive or negative charge, respectively) and they are electrically connected or interconnected by a top-side wire set or array or mesh; resulting in the solar cell obtaining or regaining PV function as an independent PV entity over its entire area or substantially its entire area.

After the solar cells are segmented into sub-regions or non-overrunning pits or "blind gaps" are introduced, adjacent or nearby sub-regions may be further mechanically interconnected to provide mechanical strength and resilience to the larger regions of the solar cells or PV devices. Furthermore, the electrical connection between adjacent sub-areas may be performed or introduced in a serial and/or parallel manner by using one or more electrical connection patterns or structures, for example by soldering or connecting or gluing or attaching or bonding electrical conductors on one or both sides of the array of sub-areas.

In some embodiments, the electrical connector may be soldered on (or onto or at) a particular sub-area; for example, one at a time, or may be placed on one or more consecutive adjacent sub-areas and then welded simultaneously. In some embodiments, the electrical connector is composed of an alloy having a lower or relatively lower melting temperature or melting point, which allows soldering and electrical connection to the sub-regions to be performed in situ as part of the manufacturing process performed at high temperature; by heating in an oven, or by a hot press process or a heating process, or by a hot press machine or process, or by a heated roll machine or process, etc.

In some embodiments, one, or two, or several sets of wires may be used to provide electrical connection to external devices; these wires form an electrically connected net or mesh or wire that is insulated (e.g., completely insulated; or at least partially insulated at certain segments) from each other, each wire carrying a current of a different polarity from a sub-region of the solar cell or PV device. Such connection may be performed on only a first side of the PV device ("sunny side"), or only a second side of the PV device ("non-sunny side"), or on both sides of the PV device; either only above the PV material, only below the PV material, or both above and below the PV material.

Some embodiments may include and/or may utilize one or more units, devices, connectors, wires, electrodes, and/or methods described in U.S. patent application publication number US2016/0308155Al, the entire contents of which are incorporated herein by reference. For example, some embodiments may include and may utilize an electrode arrangement configured to define or create a plurality of collector regions such that within each collector region, at least two sets of wires are provided such that the wires are insulated from each other, and the at least two sets of wires are connected in parallel or in series between the collector regions, thereby providing an accumulated voltage for charge collection. Some embodiments may include a circuit for sensing or collecting or focusing power generation configured as an electrode arrangement, including wires arranged in the form of a mesh or one or more meshes, covering a predetermined area of the region. The electrode arrangement may be configured or constructed to stretch (e.g., roll out) along the surface of the PV cell, and may be formed from at least two sets of wires, and may cover multiple collector regions or collector areas.

Within each collector or collector region, different wires are insulated from each other to provide a certain voltage between them. At the transition from region to region, the negative charge collection wire of one region is electrically connected to the positive charge collection wire of an adjacent or successive region. Thus, in each collector region, different sets of wires are insulated from each other, while being connected in series between the regions. This configuration of the electrode arrangement allows for the accumulation or concentration of the voltage generated by the charge collection along the surface of the PV device. This configuration of the electrode arrangement provides a robust current collecting structure.

The internal connection between the wire sets allows energy collection even if the covered surface is discontinuous, for example if perforations occur in the structure of the mesh or netting. This feature of the electrode arrangement allows the technique to be used on any surface exposed to photon radiation, including walls and/or roofs of buildings, while also allowing discontinuities in the walls or structures (e.g. for windows, or doors, or nails for hanging, or skylights of ceilings or roofs) without limiting or disrupting charge collection.

In some embodiments, an array of several electrical connectors composed of an alloy having a relatively low melting temperature or melting point are arranged in one or more directions or in a particular pattern; and then simultaneously placed under the top side (sunny side) or bottom side (back-sunny side) of the segmented or singulated solar cell or PV device and then simultaneously soldered to the sub-regions of the solar cell or PV device. In some embodiments, these electrical connectors or conductors are placed on one side of the solar cell or PV device (e.g., on the sunny side or top surface) prior to singulation process or prior to segmentation into sub-regions; and placed on the other side of the solar cell or PV device (e.g., on the back-positive side or bottom surface) after the singulation process or after segmentation into sub-regions. For example, in some embodiments, one side (e.g., the sunny/top side) of the PV device has a pre-singulated or pre-segmented placement of wire arrays or meshes, or has wire arrays or meshes of pre-singulated or pre-segmented placement; while the other side of the PV device (e.g., the back-sun/bottom side) has a back singulated or back segmented placement of the wire array or mesh, or has a wire array or mesh placed back singulated or back segmented. In other embodiments, one side (e.g., the back-sun side/bottom side) of the PV device has a pre-singulated or pre-segmented placement of wire arrays or meshes, or has wire arrays or meshes of pre-singulated or pre-segmented placement; while the other side (e.g., the sunny/top side) of the PV device has a post-singulated or post-segmented placement of the wire array or mesh, or has a post-singulated or post-segmented placement of the wire array or mesh.

In some embodiments, an array of electrical connectors formed of an alloy having a relatively low melting temperature is pre-attached to a semiconductor wafer or substrate on which (for the top surface; or under which for the bottom surface) these electrical connectors are arranged in a pattern corresponding to the layout of the electrical connectors on a sub-region of a solar cell or PV device. The electrical connector may be attached to the semiconductor substrate or semiconductor wafer in one or more directions using one or more suitable means; for example, transparent polymer films with adhesive properties are used that are capable of adhering or bonding or gluing to an electrical connector when heated.

In some embodiments, an array of electrical connectors composed of an alloy having a relatively low melting temperature may be woven or arranged or configured or positioned (e.g., non-woven) in one or more directions to form a mat or mesh or woven or non-woven mesh, or woven or non-woven mesh having electrical conductivity in one or more predetermined directions. The electrical connector itself may be woven or non-woven, or may be combined with other fibrous elements and/or wire-like elements or wire-based articles; such other elements or articles may be incorporated into the weave to increase or improve mechanical strength or rebound to mechanical forces or impacts and/or to improve adhesion to the solar cell. Such other elements may be incorporated into the weave in the same direction or directions as the electrical connector, and/or in a different direction or directions.

In a subsequent process, a semiconductor substrate or wafer is attached to one or both sides of the segmented solar cell, along with attached electrical connectors and/or pads woven with electrical connectors, and heated at an elevated temperature by an oven or heating device or heater or roller as part of the manufacturing process; whereby (i) an electrical connector composed of (or containing or comprising) an alloy having a relatively low melting temperature is soldered in-situ in a predetermined layout or pattern with (ii) a sub-region of the solar cell.

In some embodiments, the adhesion of the transparent polymer foil is optionally sufficient to mechanically attach the electrical conductors together, and welding is not necessarily required to maintain current transmission. During heating, the electrical conductor melts at a lower melting temperature, causing the mechanical and electrical connection to become a molten connection, and solidifies and hardens after cooling.

In some embodiments, the zero strain plane may be substantially on the top side of the PV material and the connection conductors, thereby maintaining the top side of the PV cell free of tension or compression or strain; this may increase the life or durability of the PV device when flexed when the connection point of the PV cell is substantially on top of the cell.

In some embodiments, additionally or alternatively, the zero strain plane may be substantially at the bottom side of the PV material and the connection conductors, thereby maintaining the bottom side of the PV cell free of tension or compression or strain; this may increase the life or durability of the PV device when flexed when the connection point of the PV cell is substantially at the bottom of the cell.

Thus, some embodiments provide a single PV cell segmented or segmented into sub-regions that are electrically connected with conductors such that the sub-regions can be arbitrarily connected in series and/or parallel fashion, creating a substantially single solar cell or PV device with the desired mix or combination between voltage and current for a given or specified or desired power.

Some embodiments provide a flexible and rollable PV device that includes segmented or segmented sub-regions that are electrically connected to each other. In some embodiments, the sub-regions are electrically connected to each other only at (or on) one side of the PV device; in particular, they are mechanically connected to each other at the sunny side that absorbs and/or transmits light to convert the PV into electricity to maximize or fully utilize the sunny side surface and avoid the introduction of pits or gaps at the (sunny side) surface of the PV device. In some embodiments, the sub-regions are electrically connected to each other on both sides of the PV device such that each side (each surface) of the PV device has its own set or array or network of wires from both the top and bottom surfaces, collecting, accumulating and transporting one particular type of charge (e.g., positive charge at the bottom surface or back-cationic side; negative charge at the top surface or sun-facing side).

In some embodiments, at least one dimension (e.g., width and/or length) of a sub-region of the solar cell is less than 10 millimeters. In some embodiments, the sub-regions are electrically connected by one or more conductors or wires, in particular by a generally elongated conductor or wire having a melting temperature below 170 degrees celsius, or below 160 degrees celsius, or below 150 degrees celsius, or below 140 degrees celsius, or below 130 degrees celsius, or in the range of 100 to 170 degrees celsius.

In some embodiments, the sub-regions of the solar cell are electrically connected to each other and/or to the wire array or mesh without soldering, without soldering mechanisms or without any soldering units or components via mechanical pressure of the conductors or wires, and/or via transparent adhesive or transparent adhesive layers, and/or by using light transmissive glue or adhesive or other bonding or connection mechanisms lacking any soldering.

In some embodiments, the sub-regions of the solar cell are electrically connected to each other and/or to the wire array or mesh by electrical conductors woven or non-woven in at least one direction into a mat-like structure or mesh. In some embodiments, non-conductive elements or fibers or wires are also woven into such mat-like or mesh-like structures, or into such wire or array of conductive elements, to provide mechanical strength or resilience and/or to enable the mesh of electrical conductors to adhere to the PV device. In some embodiments, the sub-regions are mechanically connected to each other; by the remaining thin layer of the semiconductor wafer or substrate, the layer remains over the non-overrunning pits or "blind gaps" introduced from the back-positive side surface and penetrating upward toward the positive side surface (but not reaching the positive side surface).

In some embodiments, the zero strain plane is substantially on the top side (e.g., the "sunny side") of the PV material and the corresponding connection conductors. In some embodiments, additionally or alternatively, the zero strain plane is substantially on the bottom side (e.g., "non-sunny side") of the PV material and the respective connection conductors. In some embodiments, the substantially single PV cell is segmented or sectioned into sub-regions interconnected with the electrical conductors, wherein the sub-regions may optionally be connected in series and/or parallel to create a substantially single solar cell or PV device with a desired mix or combination of voltage and current for a given power.

Referring to fig. 11, a flow chart of a method of producing a flexible and/or crimpable and/or mechanically resilient PV module or PV device or solar panel according to some exemplary embodiments.

As shown in block 1101, the method includes: adhering or gluing or bonding a wire having a low melting temperature with a transparent foil; the wires are prearranged in a predetermined arrangement (e.g., straight, curved, zig-zag, woven or non-woven mesh, knitted mesh, warp and weft).

As shown in block 1102, the method includes: preparing a semiconductor solar cell; for example, a 6 inch wide double sided silicon wafer.

As shown in block 1103, the method includes: adhering or gluing or bonding the "sunny side" of the cell to the foil; for example by heating embossing or heated rollers, or by other adhesion processes based on heat or heat assistance.

As shown in block 1104, the method may optionally include: the cells are pre-laminated in a vacuum laminator at low temperatures (e.g., 120 to 130 degrees celsius) to achieve effective and high quality adhesion and/or air-free and bubble-free adhesion.

As shown in block 1105, the method includes segmenting or singulating or sectioning (e.g., via cutting, via laser ablation, etc.) the back side (or non-sunny side, or bottom side) of the cell into sub-regions; the surface area of each sub-region is 1 (or 5, or 10, or 25, or 100, or 400, or 500, or in the range of 1 to 400, or in the range of 1 to 200, or in the range of 1 to 100, or in the range of 1 to 25, or in the range of 1 to 10) square millimeters; the surface shape of the sub-regions may be triangular or square or rectangular or other polygonal. For example, the segmentation may be performed by laser ablation or photoablation, or by evaporation or sublimation of the removed material by irradiation of a laser beam based on laser light. In some embodiments, each such segmented sub-region is no more than 1 millimeter in width and no more than 1 millimeter in length. In some embodiments, each such segmented sub-region is no more than 5 millimeters wide and no more than 5 millimeters long. In some embodiments, each such segmented sub-region is no more than 10 millimeters wide and no more than 10 millimeters long. In some embodiments, each such segmented sub-region is no more than 15 millimeters wide and no more than 15 millimeters long. In some embodiments, each such segmented sub-region is no more than 20 millimeters wide and no more than 20 millimeters long. In some embodiments, each such segmented sub-region is no more than 25 millimeters wide and no more than 25 millimeters long. Other suitable values or dimensions or sizes may be used in other embodiments.

As shown in block 1106, the method includes adhering a bottom side (or back side, or non-sunny side) of the cell to the foil; for example, by heating and connecting the cells, a layout or structure of a partial PV module (e.g., a string or series of connected solar cells) or a complete PV module (e.g., a predetermined number or pattern or structure of solar cells connected in series and/or parallel) is created. Referring also to fig. 14, this figure is an illustration of an exemplary string 1400 of interconnected or continuous sub-regions, which form a flexible and mechanically resilient elongate solar cell or PV device, according to some embodiments.

As shown in block 1107, the method may optionally include: the attached solar cells are pre-laminated in a vacuum laminator at low temperature (e.g., 120 to 130 degrees celsius) to achieve efficient and high quality adhesion and/or air-free and bubble-free adhesion.

As shown at block 1108, the method may include soldering the end connectors and completing the structural layout of the PV module or PV cell string.

As shown in block 1109, the method may include: the final lamination is performed on the PV module (or series of PV strings or cells) encapsulated with the flexible front sheet and/or flexible back sheet. This lamination is performed at a higher temperature to ensure effective soldering of the wires (e.g., at 165 degrees celsius).

Referring to fig. 12A, this figure is an illustration of a flexible and mechanically resilient solar panel or component 1210 of a PV device according to some example embodiments. The component 1210 includes a plastic foil 1211 and a linear wire or wire 1212. In some embodiments, the component 1210 is placed on top of the solar panel or the sunny side of the PV device and then heated to cause melting or softening or at least partial melting or softening of the foil with the wires 1212, thereby rendering the wires 1212 into wires that collect and transport positive and/or negative charges (e.g., respectively) that result from the PV effect in the area of the PV device directly beneath (or adjacent) the wires 1212. In some embodiments, additionally or alternatively, the component 1210 is placed under the back-positive side of a solar panel or PV device, and then heated via an oven to cause melting or at least partial melting of the wire 1212, thereby rendering the wire 1212 a wire that gathers and transmits positive and/or negative charges (e.g., respectively) that result from PV effects in the region of the PV device directly above the wire 1212 (or adjacent to the wire 1212).

Referring to fig. 12B, this figure is an illustration of a flexible and mechanically resilient solar panel or component 1220 of a PV device according to some example embodiments. The component 1220 includes a plastic foil 1221 and a zig-zag wire 1222 (e.g., a wire with alternating abrupt right and left turns). In some embodiments, the component 1220 is placed on top of the solar panel or the sunny side of the PV device and then heated to cause melting or softening or at least partial melting or softening of the foil with the wires 1222, thereby making the wires 1222 into wires that collect and transport positive and/or negative charges (e.g., respectively) that are generated by the PV effect in the area of the PV device directly below (or adjacent to) the wires 1222. In some embodiments, additionally or alternatively, the component 1220 is placed under the back-positive side of a solar panel or PV device, and then heated to cause melting or softening or at least partial melting or softening of the wire 1222, thereby rendering the wire 1222 into a wire that gathers and transmits positive and/or negative charges (e.g., respectively) that are generated by a PV effect in the region of the PV device directly above (or adjacent) the wire 1222.

Referring to fig. 12C, this figure is an illustration of a flexible and mechanically resilient solar panel or component 1230 of a PV device according to some example embodiments. The member 1230 includes a plastic foil 1231 and a curved wire 1232 (e.g., curved right turn and curved left turn curves with alternating curvatures). In some embodiments, the component 1230 is placed on top of the solar panel or the sunny side of the PV device and then heated to cause melting or softening or at least partial melting or softening of the foil with the wires 1232, thereby rendering the wires 1232 a wire that gathers and transmits positive and/or negative charges (e.g., respectively) that are generated by the PV effect in the area of the PV device directly below (or adjacent to) the wires 1232. In some embodiments, additionally or alternatively, the component 1230 is placed under the back-positive side of a solar panel or PV device, and then heated to cause melting or softening or at least partial melting or softening of the foil with the wires 1232, thereby rendering the wires 1232 conductive wires that gather and transport positive and/or negative charges (e.g., respectively) that are generated by the PV effect in the region of the PV device directly above (or adjacent) the wires 1232.

Referring to fig. 12D, this figure is an illustration of a flexible and mechanically resilient solar panel or component 1240 of a PV device according to some example embodiments. Member 1240 includes plastic foil 1241 and a knitted or woven or non-woven mesh portion of wire 1242 (e.g., including linear segments and curved segments intersecting each other). In some embodiments, the component 1240 is placed on top of the solar panel or the sunny side of the PV device and then heated to cause melting or softening or at least partial melting or softening of the foil with the wire 1242, thereby rendering the wire 1242 a wire that gathers and transmits positive and/or negative charges (e.g., respectively) that are generated by the PV effect in the area of the PV device directly below the wire 1242 (or adjacent to the wire 1242). In some embodiments, additionally or alternatively, the component 1240 is placed under the back-positive side of the solar panel or PV device and then heated to cause melting or softening or at least partial melting or softening of the foil with the wire 1242, thereby rendering the wire 1242 a wire that gathers and transmits positive and/or negative charges (e.g., respectively) that are generated by the PV effect in the area of the PV device directly above the wire 1242 (or adjacent to the wire 1242).

Referring to fig. 13, a diagram is an illustration of a flexible and mechanically resilient solar panel or component 1300 of a PV device according to some example embodiments. The component 1300 shows a plastic foil 1302 and a mesh or array of wires 1303 adjacent to or on top of a solar cell 1301, the solar cell 1301 being capable of converting light into electricity. For example, the web of wires 1303 is placed on top of the sunny side (or under the back-sunny side thereof) of a solar panel or PV device, and then heated to cause melting or softening or at least partial melting or softening of the foil with wires 1303, thereby making wires 1303 wires that gather and transport positive and/or negative charges (e.g., respectively) that are generated by the PV effect in the area of the PV device immediately adjacent to the wires 1303. The solar cell 1301 may include a dimple or non-overrunning gap or blind gap, which may increase the mechanical resilience of the solar cell and help absorb and/or dissipate mechanical shock.

Referring to fig. 15, this figure is an illustration of a flexible and mechanically resilient solar panel or component 1500 of a PV device according to some example embodiments. Component 1500 illustrates a solar cell 1501 having a back side 1502, illustrating an array of sub-regions (e.g., each sub-region having a width of less than 10 millimeters and/or having a length of less than 10 millimeters; or other suitable size or dimension) that is created by a plurality of cut lines (1511, 1512, 1513) that may be perpendicular to each other or may be angled or inclined to each other, the cut lines creating non-overrunning pockets or blind gaps, providing mechanical rebound and improved shock absorption.

Referring to fig. 16A, this figure is an enlarged illustration of a portion 1610 of a flexible and mechanically resilient solar panel or PV device according to some example embodiments. For example, the wire 1611 may be linear or rectilinear, and may collect and transmit positive (or negative) charges generated by absorption of light by the PV effect.

Referring to fig. 16B, this figure is an enlarged illustration of a portion 1620 of a flexible and mechanically resilient solar panel or PV device according to some example embodiments. For example, the wire 1621 may be a zig-zag structure and may collect and transmit positive (or negative) charges generated by absorption of light by the PV effect.

Some embodiments include a flexible and mechanically resilient Photovoltaic (PV) cell comprising: PV cells formed from a single semiconductor wafer; wherein the PV cell has a sunny side surface configured to absorb light; wherein the PV cell has a back-male side surface opposite the sunny side surface and not configured to absorb light; wherein the PV cell generates an electrical current from light by a PV effect, wherein the sun-facing side surface generates only a negative current, wherein the back-sun side surface generates only a positive current; wherein the PV cell comprises a plurality of non-overrunning pockets penetrating upwardly from the back-male side surface toward the male side surface, but not reaching said male side surface; wherein the non-overrunning pits penetrate up to between 80% and 99.9% of the height of the semiconductor wafer and segment the semiconductor wafer into a plurality of micro subregions; wherein each sub-region has a surface area or coverage area measured at the sunny side surface in the range of 0.1 to 500 square millimeters; wherein the plurality of non-overrunning pockets and the plurality of micro-sub-regions provide the PV cell with improved mechanical spring-back and mechanical shock absorption and shock dissipation characteristics; wherein the PV cell further comprises: a top side lead set mechanically coupled directly on top of the sunny side surface; wherein the topside conductor set only collects and transmits negative charge generated by the PV effect of the sunny side surface; a bottom side lead set directly mechanically connected below the back-male side surface; wherein the bottom side conductor sets collect and transmit only positive charges generated by the PV effect of the backside surface.

Some embodiments include a flexible and mechanically resilient Photovoltaic (PV) cell comprising: PV cells formed from a single semiconductor wafer; wherein the PV cell has a sunny side surface configured to absorb light; wherein the PV cell has a back-male side surface opposite the sunny side surface and not configured to absorb light; wherein the PV cell generates an electrical current from light by a PV effect, wherein the sunny side surface generates only a positive current, wherein the back-sunny side surface generates only a negative current; wherein the PV cell comprises a plurality of non-overrunning pockets penetrating upwardly from the back-male side surface toward the male side surface, but not reaching said male side surface; wherein the non-overrunning pits penetrate up to between 80% and 99.9% of the height of the semiconductor wafer and segment the semiconductor wafer into a plurality of micro subregions; wherein each sub-region has a surface area or coverage area measured at the sunny side surface in the range of 0.1 to 500 square millimeters; wherein the plurality of non-overrunning pockets and the plurality of micro-sub-regions provide the PV cell with improved mechanical spring-back and mechanical shock absorption and shock dissipation characteristics; wherein the PV cell further comprises: a top side lead set mechanically coupled directly on top of the sunny side surface; wherein the topside lead set only collects and transmits positive charges generated by the PV effect of the sunny side surface; a bottom side lead set directly mechanically connected below the back-male side surface; wherein the bottom side conductor sets collect and transmit only negative charges generated by the PV effect of the backside surface.

According to some embodiments, a PV cell comprises: a top side lead set mechanically coupled directly on top of the sunny side surface; wherein the topside lead set only collects and transfers charges of a first polarity type, i.e. negative or positive, generated by the PV effect; and a bottom side lead set mechanically connected directly below the back-male side surface; wherein the bottom side conductor sets collect and transport only the second opposite polarity type of charge, positive or negative, created by the PV effect.

Some embodiments provide a flexible and/or crimpable and/or bendable and/or foldable and/or mechanically resilient Photovoltaic (PV) cell or PV device or PV article comprising: PV cells formed from a single semiconductor wafer; wherein the PV cell has a sunny side surface configured to absorb (and/or transmit and/or transport) light; wherein the PV cell has a back-male side surface opposite the sunny side surface and not configured to absorb light; wherein the PV cell is configured to generate an electrical current from absorbed light or from incident light by the PV effect. The PV cell includes a plurality of non-overrunning pits or "blind gaps" that penetrate upward from the back-to-front surface but do not reach the front-to-front surface; the non-overrunning pits penetrate up to between 80% and 99.9% of the height of the semiconductor wafer and segment or singulate the semiconductor wafer into a plurality of micro-sub-areas. The surface area or coverage area of each sub-region measured at the sun-facing side surface of the PV cell is in the range of 0.1 to 500 square millimeters. The plurality of non-overrunning pockets and the plurality of micro-sub-regions provide the PV cell with improved mechanical resilience and mechanical shock absorption and shock dissipation characteristics. The PV cell further comprises: a top side lead set mechanically coupled directly on top of the sunny side surface; wherein the topside lead set only collects and transfers charges of a first polarity type, i.e. negative or positive, generated by the PV effect; and a bottom side lead set mechanically connected directly below the back-male side surface; wherein the bottom side conductor sets collect and transport only the second opposite polarity type of charge, positive or negative, created by the PV effect.

In some embodiments, the topside lead set includes a set of substantially parallel leads spaced apart from each other by a distance of between 1 and 10 millimeters, the set of substantially parallel leads collecting and transporting only charge of a first polarity type generated by the PV effect; while the bottom side set of wires comprises a set of substantially parallel wires spaced apart from each other by a distance of between 1 and 10 millimeters, the set of substantially parallel wires collecting and transporting only charges of a second polarity type generated by the PV effect; and each sub-region of the plurality of sub-regions of the PV cell is contacted at least 50% (or at least 66% >, or at least 75% >, or at least 80% >, or at least 85% >, or at least 90%) at a top side of the sub-region and is also contacted at least one wire of the top side wire set at a bottom side of the sub-region.

In some embodiments, the topside lead set includes a set of zigzagged structured leads spaced apart from each other by a distance of between 1 and 10 millimeters, the set of zigzagged structured leads collecting and transporting only a first polarity type of charge generated by the PV effect; wherein the bottom side set of wires comprises a set of substantially parallel wires spaced apart from each other by a distance of between 1 and 10 millimeters, the set of substantially parallel wires collecting and transporting only charges of a second polarity type generated by the PV effect; wherein each sub-region of the plurality of sub-regions of the PV cell is at least 50% (or at least 66% >, or at least 75% >, or at least 80% >, or at least 85% >, or at least 90%) contacted at least one wire of the top side wire set at a top side of the sub-region, and further contacted at least one wire of the bottom side wire set at a bottom side of the sub-region.

In some embodiments, the topside lead set includes a set of curved or coiled or nonlinear leads that are spaced apart from each other by a distance of between 1 and 10 millimeters, the set of curved or coiled or nonlinear leads collecting and transporting only a first polarity type of charge generated by the PV effect; wherein the bottom side set of wires comprises a set of substantially parallel wires spaced apart from each other by a distance of between 1 and 10 millimeters, the set of substantially parallel wires collecting and transporting only charges of a second polarity type generated by the PV effect; wherein each sub-region of the plurality of sub-regions of the PV cell is at least 50% (or at least 66% >, or at least 75% >, or at least 80% >, or at least 85% >, or at least 90%) contacted at least one wire of the top side wire set at a top side of the sub-region, and further contacted at least one wire of the bottom side wire set at a bottom side of the sub-region.

In some embodiments, the topside lead set includes a cross-lead network that collects and transmits only charge of a first polarity type generated by the PV effect; wherein the bottom side set of wires comprises a set of substantially parallel wires spaced apart from each other by a distance of between 1 and 10 millimeters, the set of substantially parallel wires collecting and transporting only charges of a second polarity type generated by the PV effect; wherein each sub-region of the plurality of sub-regions of the PV cell is at least 50% (or at least 66% >, or at least 75% >, or at least 80% >, or at least 85% >, or at least 90%) contacted at least one wire of the top side wire set at a top side of the sub-region, and further contacted at least one wire of the bottom side wire set at a bottom side of the sub-region.

In some embodiments, the top side lead set includes a lead set embedded within a top side transparent flexible adhesive foil of plastic material that mechanically adheres the top side lead set to the sunny side surface and enables light to pass through the top side transparent flexible adhesive foil of plastic material toward the sunny side surface; wherein the bottom side lead set comprises a lead set embedded within a bottom side flexible adhesive foil of plastic material mechanically adhering the bottom side lead set to the back-male side surface.

In some embodiments, the top side lead set includes a top side non-soldered molten lead set formed of a metal alloy, wherein the alloy has a melting temperature of less than 150 degrees celsius; wherein each wire of the top side wire set is connected to the sunny side surface by a solderless connection formed from a solidified molten alloy.

In some embodiments, the bottom side lead set comprises a bottom side non-soldered molten lead set formed of a metal alloy, wherein the alloy has a melting temperature of less than 150 degrees celsius; wherein each wire of the bottom side wire set is connected to the back-male side surface by a solderless connection formed from a solidified molten alloy.

In some embodiments, the sunny side surface is covered by a set of topside wires, the wires being spaced apart by a distance of between 2 and 9 millimeters; wherein the distance is small enough to be able to effectively collect charge of a first polarity type from the sunny side surface of the PV cell; wherein the distance is large enough to minimize obstruction of incident light by the top side lead set as the incident light travels toward a sunny side surface located below the top side lead set.

In some embodiments, the back-male side surface is covered from below by a bottom side set of wires, the wires being spaced apart by a distance of between 2 and 9 millimeters; wherein the distance is small enough to be able to effectively collect charge of the second polarity type from the back-positive side surface of the PV cell.

In some embodiments, the bottom side lead set comprises a lead set embedded within a bottom side flexible adhesive foil of plastic material that mechanically adheres the bottom side lead set to the back-male side surface, wherein at least a portion of the bottom side flexible adhesive foil of plastic material at least partially fills the non-overrunning pocket and provides the PV cell with improved mechanical resilience and mechanical shock absorption and shock dissipation characteristics.

In some embodiments, the bottom side flexible adhesive foil of plastic material is a component selected from the group consisting of: high elasticity stretchable polyolefin films, rigid-flexible Polyester (PET) films, rigid Polyester (PET) films.

In some embodiments, the top side transparent flexible adhesive foil of plastic material is a component selected from the group consisting of: high elasticity stretchable polyolefin films, rigid-flexible Polyester (PET) films, rigid Polyester (PET) films.

In some embodiments, the topside lead set attached over the upper side of the sunny side surface of the PV cell is non-planar and non-planar to enhance the overall elasticity of the flexible and mechanically resilient PV cell.

In some embodiments, the bottom side lead set attached under the underside of the back-male side surface of the PV cell is non-planar and non-planar to enhance the overall elasticity of the flexible and mechanically resilient PV cell.

In some embodiments, the sub-regions are configured as a flexible, mechanically resilient, elongate, segmented string or series of sub-regions that converts light into electricity by the PV effect.

In some embodiments, the sub-regions are configured as flexible, mechanically resilient, elongated strings of segmented sub-regions that convert light into electricity by the PV effect; wherein the segmented sub-region string has its own laminated omnidirectional coating that separates the string from other strings in the vicinity.

In some embodiments, the flexible PV cell is a flexible, mechanically resilient, curved or non-planar article having a plurality of the segmented sub-regions that convert light into electricity by the PV effect; wherein all of the sub-regions are encapsulated together rather than being discretely or separately encapsulated within a single laminate layer.

In some embodiments, the metal alloy mechanically and electrically connecting the topside lead set over the sunny side surface of the PV cell comprises one or more of: a solidified molten alloy of indium and another metal, a solidified molten alloy of indium and tin, a solidified molten alloy of bismuth and another metal, a solidified molten alloy of bismuth and tin, a solidified molten alloy having a melting temperature of less than 150 degrees celsius. In some embodiments, the metal alloy under the back-positive side surface of the PV cell that mechanically and electrically connects the bottom-side lead set comprises one or more of: a solidified molten alloy of indium and another metal, a solidified molten alloy of indium and tin, a solidified molten alloy of bismuth and another metal, a solidified molten alloy of bismuth and tin, a solidified molten alloy having a melting temperature of less than 150 degrees celsius.

In some embodiments, the flexible and mechanically resilient PV cell is part of a device selected from the group consisting of: vehicles, automobiles, automated vehicles, autopilots, boats, ships, boats, yachts, aircraft, airplanes, unmanned aerial vehicles, helicopters, spacecraft, satellites, space stations, buildings, walls, roofs, roof tiles, doors, shutters, window coverings, wearable articles, electronic devices.

Some embodiments provide a flexible and/or crimpable and/or bendable and/or foldable and/or mechanically resilient Photovoltaic (PV) cell or PV device or PV article comprising: PV cells formed from a single semiconductor wafer; wherein the PV cell has a top-facing light absorbing surface (e.g., which may even be an opposite side or surface thereof) that is operable to directly receive and/or absorb light and enable conversion of such incident light to electrical charge or power by the PV effect, and/or to transmit or pass at least a portion of the incident light toward another surface or component or area of the PV cell; wherein the PV cell has a bottom-facing light-absorbing surface opposite the top-facing light-absorbing surface; wherein the PV cell is a two-sided or double-sided PV cell configured to generate an electrical current by the PV effect from (i) light directly and/or indirectly reaching the top-facing light absorbing surface and (ii) light directly and/or indirectly reaching the bottom-facing light absorbing surface (e.g., including, but not limited to, light reflected from a nearby surface or object or building or wall, or light penetrating the PV cell from another opposing surface or side of the PV cell, or light penetrating the entire depth of the PV cell until reaching the bottom-side light absorbing surface). The PV cell includes a plurality of non-overrunning pockets penetrated upwardly by a bottom-facing light absorbing surface toward a top-facing light absorbing surface but not reaching the top-facing light absorbing surface; wherein the non-overrunning pits penetrate up to between 80% and 99.9% of the height of the semiconductor wafer and segment the semiconductor wafer into a plurality of micro-sub-areas. The surface area or coverage area of each sub-region measured at the top-facing light absorbing surface of the PV cell is in the range of 0.1 to 500 square millimeters. The plurality of non-overrunning pockets and the plurality of micro-sub-regions provide the PV cell with improved mechanical resilience and mechanical shock absorption and shock dissipation characteristics. The PV cell further comprises: a top side lead set directly mechanically connected to the top of the top-facing light absorbing surface; wherein the topside lead set only collects and transfers charges of a first polarity type, i.e. negative or positive, generated by the PV effect; and a bottom side lead set directly mechanically connected below the bottom-facing light absorbing surface; wherein the bottom side conductor sets collect and transport only the second opposite polarity type of charge, positive or negative, created by the PV effect.

In some embodiments, the set of wires "embedded" in or "embedded" within the flexible and/or tacky and/or light transmissive plastic foil or plastic film is embedded directly under such film or foil, or directly over such film or foil, or contained within such film or foil (e.g., with the plastic to the right and left of each wire, but without impeding or preventing the wires from contacting the PV cell surface to collect charge therefrom). In some embodiments, the sun facing side surface and/or the back sun side surface of the PV cell, or the top side and/or the bottom side of the PV cell, may be coated with an adhesive or transparent adhesive, and/or with a conductive adhesive and/or conductive transparent adhesive, to enable gluing or bonding such surfaces of the PV cell to the wire set for long term bonding or at least for short term bonding prior to heating the plastic foil and/or prior to laminating or encapsulating the PV cell in a production process.

Some embodiments provide a method of producing a flexible and/or crimpable and/or bendable and/or foldable and/or mechanically resilient Photovoltaic (PV) cell or PV device or PV article, the method comprising: (a) Producing a PV cell formed from a single semiconductor wafer, wherein the PV cell has a sunny side surface configured to absorb light, wherein the PV cell has a back-cationic side surface opposite the sunny side surface and not configured to absorb light; wherein the PV cell is configured to generate an electrical current from light by a PV effect; (b) Creating or forming or drilling or cutting or etching or performing a plurality of non-overrunning pits in the PV cell by laser-based ablation, the non-overrunning pits penetrating upward from the back-to-male surface but not reaching the male surface; wherein the non-overrunning pits penetrate up to between 80% and 99.9% of the height of the semiconductor wafer and segment the semiconductor wafer into a plurality of micro subregions; wherein each sub-region has a surface area or footprint measured at the sunny side surface of the PV cell in the range of 0.1 to 500 square millimeters; wherein the plurality of non-overrunning pockets and the plurality of micro-sub-regions provide the PV cell with improved mechanical resilience and mechanical shock absorption and shock dissipation characteristics; (c) Placing a top-side lead set embedded within a top-side flexible transparent adhesive plastic foil over a sunny side surface of the PV cell; the heating process is performed at a temperature below 150 degrees celsius to melt and/or soften the top side flexible transparent adhesive plastic foil and create a mechanical connection between (i) the wires of the top side conductive set and (ii) the upper side of the sunny side surface of the PV cell, wherein the top side wire set collects and transfers only one polarity type of charge generated by the PV effect, which is either negative or positive.

In some embodiments, the method further comprises, prior to or after or simultaneously with step (c): placing a bottom side lead set embedded within a bottom side flexible transparent adhesive plastic foil under a back-male side surface of the PV cell; the heating process is performed at a temperature below 150 degrees celsius to melt and/or soften the bottom side flexible transparent adhesive plastic foil and create a mechanical connection between (i) the wires of the bottom side conductive set and (ii) the underside of the back-positive side surface of the PV cell, wherein the bottom side wire set collects and transfers only one polarity type of charge generated by the PV effect, which is either positive or negative and is opposite to the one polarity type of charge collected and transferred by the top side wire set.

In some embodiments, the heating process of the topside flexible transparent adhesive plastic foil is accomplished using heated rollers to form an air-free and bubble-free adhesion of the topside lead set to the sunny side surface of the PV cell; and/or performing the heating process on the bottom side flexible transparent adhesive plastic foil is done using heated rollers to form an air-free and bubble-free adhesion of the bottom side lead set to the back-side surface of the PV cell.

Some embodiments provide a method of producing a flexible and/or crimpable and/or bendable and/or foldable and/or mechanically resilient Photovoltaic (PV) cell or PV device or PV article, the method comprising: (a) Producing a PV cell formed from a single semiconductor wafer, wherein the PV cell has a top-facing light-absorbing surface, wherein the PV cell has a bottom-facing light-absorbing surface opposite the top-facing light-absorbing surface; wherein the PV cell is a bifacial PV cell configured to generate an electrical current by the PV effect (i) from light directly and/or indirectly reaching the top-facing light absorbing surface and (ii) from light directly and/or indirectly reaching the bottom-facing light absorbing surface; (b) Creating a plurality of non-overrunning pockets in the PV cell that are penetrated upward by a bottom-facing light absorbing surface toward a top-facing light absorbing surface but do not reach the top-facing light absorbing surface; wherein the non-overrunning pits penetrate up to between 80% and 99.9% of the height of the semiconductor wafer and segment the semiconductor wafer into a plurality of micro subregions; wherein each sub-region has a surface area or footprint measured at the top-facing light absorbing surface of the PV cell in the range of 0.1 to 500 square millimeters; wherein the plurality of non-overrunning pockets and the plurality of micro-sub-regions provide the PV cell with improved mechanical resilience and mechanical shock absorption and shock dissipation characteristics; (c) Placing a top-side lead set embedded within a top-side flexible transparent adhesive plastic foil over a top-facing light-absorbing surface of the PV cell; the heating process is performed at a temperature below 150 degrees celsius to melt and/or soften the top side flexible transparent adhesive plastic foil and create a mechanical connection between (i) the wires of the top side conductive set and (ii) the upper side of the top facing light absorbing surface of the PV cell, wherein the top side wire set only collects and transfers charge of the unipolar type generated by the PV effect, which is either negative or positive.

In some embodiments, the method further comprises, prior to or after or simultaneously with step (c): placing a bottom side lead set embedded within a bottom side flexible transparent adhesive plastic foil under a bottom facing light absorbing surface of the PV cell; the heating process is performed at a temperature below 150 degrees celsius to melt and/or soften the bottom side flexible transparent adhesive plastic foil and create a mechanical connection between (i) the wires of the bottom side conductive set and (ii) the underside of the bottom-facing light absorbing surface of the PV cell, wherein the bottom side wire set collects and transfers only one polarity type of charge generated by the PV effect, which is either positive or negative and is opposite to the one polarity type of charge collected and transferred by the top side wire set.

In some embodiments, the heating process of the topside flexible transparent adhesive plastic foil is accomplished using heated rollers to form an air-free and bubble-free adhesion of the topside lead set to the sunny side surface of the PV cell; and/or performing the heating process on the bottom side flexible transparent adhesive plastic foil is done using heated rollers to form an air-free and bubble-free adhesion of the bottom side lead set to the back-side surface of the PV cell.

Some embodiments provide a system for producing a flexible and/or crimpable and/or bendable and/or foldable and/or mechanically resilient Photovoltaic (PV) cell or PV device or PV article, the system comprising: (a) A PV cell production unit configured to produce a PV cell formed from a single semiconductor wafer, wherein the PV cell has a sunny side surface configured to absorb light, wherein the PV cell has a back-cationic side surface opposite the sunny side surface and not configured to absorb light; wherein the PV cell is configured to generate an electrical current from light by a PV effect; (b) A non-overrunning pit producing unit configured to produce a plurality of non-overrunning pits in the PV cell, the non-overrunning pits penetrating upward from a back-to-sun side surface but not reaching the sun-to-sun side surface; wherein the non-overrunning pits penetrate up to between 80% and 99.9% of the height of the semiconductor wafer and segment the semiconductor wafer into a plurality of micro subregions; wherein each sub-region has a surface area or footprint measured at the sunny side surface of the PV cell in the range of 0.1 to 500 square millimeters; wherein the plurality of non-overrunning pockets and the plurality of micro-sub-regions provide the PV cell with improved mechanical resilience and mechanical shock absorption and shock dissipation characteristics; (c) A placement and heating unit configured to place a top side lead set embedded within a top side flexible transparent adhesive plastic foil over a sunny side surface of the PV cell; and performing a heating process at a temperature of less than 150 degrees celsius to melt and/or soften the topside flexible transparent adhesive plastic foil and create a mechanical connection between (i) the wires of the topside conductive set and (ii) the upper side of the sunny side surface of the PV cell, wherein the topside wire set collects and transfers only one polarity type of charge generated by the PV effect, the charge being a negative or positive charge.

Some embodiments provide a system for producing a flexible and/or crimpable and/or bendable and/or foldable and/or mechanically resilient Photovoltaic (PV) cell or PV device or PV article, the system comprising: (a) A PV cell production unit configured to produce a PV cell formed from a single semiconductor wafer, wherein the PV cell has a top-facing light absorbing surface, wherein the PV cell has a bottom-facing light absorbing surface opposite the top-facing light absorbing surface; wherein the PV cell is a bifacial PV cell configured to generate an electrical current by the PV effect (i) from light directly and/or indirectly reaching the top-facing light absorbing surface and (ii) from light directly and/or indirectly reaching the bottom-facing light absorbing surface; (b) A non-overrunning pit producing unit configured to produce a plurality of non-overrunning pits in the PV cell, the non-overrunning pits penetrating upward from a bottom-facing light absorbing surface toward a top-facing light absorbing surface but not reaching the top-facing light absorbing surface; wherein the non-overrunning pits penetrate up to between 80% and 99.9% of the height of the semiconductor wafer and segment the semiconductor wafer into a plurality of micro subregions; wherein each sub-region has a surface area or footprint measured at the top-facing light absorbing surface of the PV cell in the range of 0.1 to 500 square millimeters; wherein the plurality of non-overrunning pockets and the plurality of micro-sub-regions provide the PV cell with improved mechanical resilience and mechanical shock absorption and shock dissipation characteristics; (c) A placement and heating unit configured to place a top-side lead set embedded within a top-side flexible transparent adhesive plastic foil over a top-facing light absorbing surface of the PV cell; and performing a heating process at a temperature below 150 degrees celsius to melt and/or soften the topside flexible transparent adhesive plastic foil and create a mechanical connection between (i) the wires of the topside conductive set and (ii) the upper side of the top light absorbing surface of the PV cell, wherein the topside wire set only collects and transfers a charge of a unipolar type generated by the PV effect, the charge being a negative or positive charge.

In some embodiments, some or all or most of the non-overrunning pockets or "blind gaps" are filled with one or more filler materials that further provide mechanical shock absorption and/or mechanical shock dissipation and/or thermal rebound and/or mechanical rebound and/or physical rebound.

In some embodiments, the PV cells or PV devices are laminated or encapsulated within a single lamination unit or encapsulation unit, or within two or more layers or coatings or encapsulants, which may be transparent and allow light to pass through, and which may provide further mechanical resilience and damage protection to the PV cells or PV devices. Alternatively, such lamination or encapsulation may be performed after the above-described production steps.

As used herein, the terms "plurality" and "a plurality" include, for example, "a plurality" or "two or more". For example, "a plurality of items" includes two or more items.

References to "one embodiment," "an example embodiment," "various embodiments," "some embodiments," and/or similar terms may mean that the embodiments so described may optionally include a particular feature, structure, or characteristic, but not every embodiment necessarily includes the particular feature, structure, or characteristic. Furthermore, repeated use of the phrase "in one embodiment" does not necessarily refer to the same embodiment, although it may. Similarly, repeated use of the phrase "in some embodiments" does not necessarily refer to the same set or group of embodiments, although it may.

As used herein, unless otherwise indicated, the use of ordinal adjectives such as "first," "second," "third," "fourth," etc., to describe an item or object, merely indicate that different instances of like items or objects are being referred to; and is not intended to imply that the items or objects so described must be in a particular given order, either temporally, spatially, in ranking, or in any other ordered manner.

The functions, operations, components and/or features described herein with reference to one or more embodiments may be combined with or may be used in combination with one or more other functions, operations, components and/or features described herein with reference to one or more other embodiments. Thus, some embodiments may include any possible or suitable combination, rearrangement, assembly, reassembly, or other utilization of some or all of the modules or functions or components described herein, even if they are in different locations or in different sections of the discussion above, or even if they are shown in different figures or in multiple figures.

While certain features of some exemplary embodiments have been illustrated and described herein, various modifications, substitutions, changes, and equivalents will now occur to those skilled in the art. Accordingly, the claims are intended to embrace all such modifications, alternatives, variations and equivalents.

Claims (30)

1. A flexible and mechanically resilient Photovoltaic (PV) cell comprising:

PV cells formed from a single semiconductor wafer,

wherein the PV cell has a sunny side surface configured to absorb light,

wherein the PV cell has a back-male side surface opposite the sunny side surface and not configured to absorb light;

wherein the PV cell is configured to generate an electrical current from light by a PV effect;

wherein the PV cell comprises a plurality of non-overrunning pockets penetrated upwardly by the back-male side surface toward the male side surface but not reaching the male side surface; wherein the non-overrunning pits penetrate up to between 80% and 99.9% of the height of the semiconductor wafer and segment the semiconductor wafer into a plurality of micro subregions;

wherein the surface area or coverage area of each sub-region measured at the sunny side surface of the PV cell is in the range of 0.1 to 500 square millimeters;

wherein the plurality of non-overrunning pockets and the plurality of micro-sub-regions provide the PV cell with improved mechanical resilience and mechanical shock absorption and shock dissipation characteristics;

wherein the PV cell further comprises:

a top side conductor set mechanically coupled directly on top of the sunny side surface; wherein the topside lead set only collects and transfers charge of a first polarity type, negative or positive, generated by the PV effect;

A bottom side lead set mechanically connected directly below the backside surface; wherein the bottom side conductor sets collect and transport only charges of a second opposite polarity type, i.e. positive or negative, generated by the PV effect.

2. The flexible and mechanically resilient PV cell of claim 1,

wherein the topside lead set comprises a set of substantially parallel leads spaced apart from each other by a distance of between 1 and 10 millimeters, the set of substantially parallel leads collecting and transporting only the first polarity type of charge generated by the PV effect;

wherein the bottom side set of wires comprises a set of substantially parallel wires spaced apart from each other by a distance of between 1 and 10 millimeters, the set of substantially parallel wires collecting and transporting only the second polarity type of charge generated by the PV effect;

wherein at least 50% of each sub-region of the plurality of sub-regions of the PV cell contacts at least one wire of the top-side wire set at a top side of the sub-region and also contacts at least one wire of the bottom-side wire set at a bottom side of the sub-region.

3. The flexible and mechanically resilient PV cell of any one of claim 1 to 2,

Wherein the top side set of wires comprises a set of zigzag structured wires spaced apart from each other by a distance of between 1 and 10 millimeters, the set of zigzag structured wires collecting and transporting only the first polarity type of charge generated by the PV effect;

wherein the bottom side set of wires comprises a set of substantially parallel wires spaced apart from each other by a distance of between 1 and 10 millimeters, the set of substantially parallel wires collecting and transporting only the second polarity type of charge generated by the PV effect;

wherein at least 50% of each sub-region of the plurality of sub-regions of the PV cell contacts at least one wire of the top-side wire set at a top side of the sub-region and also contacts at least one wire of the bottom-side wire set at a bottom side of the sub-region.

4. The flexible and mechanically resilient PV cell of any one of claim 1 to 3,

wherein the topside lead set comprises a set of curved or nonlinear leads spaced apart from each other by a distance of between 1 and 10 millimeters, the set of curved or nonlinear leads collecting and transporting only the first polarity type of charge generated by the PV effect;

wherein the bottom side set of wires comprises a set of substantially parallel wires spaced apart from each other by a distance of between 1 and 10 millimeters, the set of substantially parallel wires collecting and transporting only the second polarity type of charge generated by the PV effect;

Wherein at least 50% of each sub-region of the plurality of sub-regions of the PV cell contacts at least one wire of the top-side wire set at a top side of the sub-region and also contacts at least one wire of the bottom-side wire set at a bottom side of the sub-region.

5. The flexible and mechanically resilient PV cell of any one of claims 1 to 4,

wherein the topside lead set comprises a network of intersecting leads that collect and transport only the first polarity type of charge generated by the PV effect;

wherein the bottom side set of wires comprises a set of substantially parallel wires spaced apart from each other by a distance of between 1 and 10 millimeters, the set of substantially parallel wires collecting and transporting only the second polarity type of charge generated by the PV effect;

wherein at least 50% of each sub-region of the plurality of sub-regions of the PV cell contacts at least one wire of the top-side wire set at a top side of the sub-region and also contacts at least one wire of the bottom-side wire set at a bottom side of the sub-region.

6. The flexible and mechanically resilient PV cell of any one of claims 1 to 5,

wherein the top side lead set comprises a lead set embedded within a top side transparent flexible adhesive foil of plastic material that mechanically adheres the top side lead set to the sunny side surface and enables light to pass through the top side transparent adhesive foil of plastic material towards the sunny side surface;

Wherein the bottom side lead set comprises a lead set embedded within a bottom side flexible adhesive foil of plastic material mechanically adhering the bottom side lead set to the back-male side surface.

7. The flexible and mechanically resilient PV cell of any one of claims 1 to 6,

wherein the top side lead set comprises a top side non-soldered molten lead set formed of a metal alloy, wherein the alloy has a melting temperature of less than 150 degrees celsius;

wherein each wire of the top side wire set is connected to the sunny side surface by a solderless connection formed from a solidified molten alloy.

8. The flexible and mechanically resilient PV cell of any one of claims 1 to 7,

wherein the bottom side lead set comprises a bottom side non-soldered molten lead set formed of a metal alloy, wherein the alloy has a melting temperature of less than 150 degrees celsius;

wherein each wire of the bottom side wire set is connected to the backside surface by a solderless connection formed from a solidified molten alloy.

9. The flexible and mechanically resilient PV cell of any one of claims 1 to 8,

wherein said sunny side surface is covered by said topside conductor sets, said conductors being spaced apart by a distance of between 2 and 9 mm,

Wherein the distance is small enough to be able to effectively collect the first polarity type of charge from the sunny side surface of the PV cell,

wherein the distance is large enough to minimize obstruction of incident light by the top side wire set as the incident light travels toward the sunny side surface below the top side wire set.

10. The flexible and mechanically resilient PV cell of any one of claim 1 to 9,

wherein the back-male side surface is covered from below by the bottom side set of wires, the wires being spaced apart by a distance of between 2 and 9 mm,

wherein the distance is small enough to be able to effectively collect the second polarity type of charge from the back-positive side surface of the PV cell.

11. The flexible and mechanically resilient PV cell of any one of claims 1 to 10,

wherein the bottom side lead set comprises a lead set embedded within a bottom side flexible adhesive foil of plastic material mechanically adhering the bottom side lead set to the back-male side surface,

wherein at least a portion of the plastic material's underside flexible adhesive foil at least partially fills the non-overrunning pockets and provides the PV cells with improved mechanical resilience and mechanical shock absorption and shock dissipation characteristics.

12. The flexible and mechanically resilient PV cell of any one of claims 1 to 11,

wherein the bottom side flexible adhesive foil of plastic material is a component selected from the group consisting of:

a high-elasticity stretchable polyolefin film,

A rigid-flexible Polyester (PET) film,

Rigid Polyester (PET) films.

13. The flexible and mechanically resilient PV cell of any one of claims 1 to 12,

wherein the top transparent flexible adhesive foil of plastic material is a component selected from the group consisting of:

a high-elasticity stretchable polyolefin film,

A rigid-flexible Polyester (PET) film,

Rigid Polyester (PET) films.

14. The flexible and mechanically resilient PV cell of any one of claims 1 to 13,

wherein the topside lead set attached over the upper side of the sunny side surface of the PV cell is non-planar and non-planar to enhance the overall elasticity of the flexible and mechanically resilient PV cell.

15. The flexible and mechanically resilient PV cell of any one of claims 1 to 14,

wherein the bottom side lead set attached under the underside of the back-male side surface of the PV cell is non-planar and non-planar to enhance the overall elasticity of the flexible and mechanically resilient PV cell.

16. The flexible and mechanically resilient PV cell of any one of claims 1 to 15,

wherein the subregions are configured as flexible, mechanically resilient, elongate strings or series of segmented subregions which convert light into electricity by the PV effect.

17. The flexible and mechanically resilient PV cell of any one of claims 1 to 16,

wherein the subregions are configured as flexible, mechanically resilient, elongate strings of segmented subregions which convert light into electricity by the PV effect,

wherein the segmented sub-region string has its own laminated omnidirectional coating separating the string from other strings in the vicinity.

18. The flexible and mechanically resilient PV cell of any one of claims 1 to 17,

wherein the flexible PV cell is a flexible, mechanically resilient, curved or non-planar article having a plurality of the segmented sub-regions that convert light into electricity by the PV effect;

wherein all of the sub-regions are encapsulated together rather than being discretely or separately encapsulated within a single laminate layer.

19. The flexible and mechanically resilient PV cell of any one of claims 1 to 18,

Wherein the metal alloy mechanically and electrically connecting the topside lead set over the sunny side surface of the PV cell comprises one or more of:

solidifying molten alloy of indium and another metal,

Solidifying molten alloy of indium and tin,

Solidifying molten alloy of bismuth and another metal,

Solidifying and melting alloy of bismuth and tin,

The molten alloy is solidified at a melting temperature below 150 degrees celsius.

20. The flexible and mechanically resilient PV cell of any one of claims 1 to 19, wherein the metal alloy mechanically and electrically connecting the bottom side lead set below the back-male side surface of the PV cell comprises one or more of:

solidifying molten alloy of indium and another metal,

Solidifying molten alloy of indium and tin,

Solidifying molten alloy of bismuth and another metal,

Solidifying and melting alloy of bismuth and tin,

The molten alloy is solidified at a melting temperature below 150 degrees celsius.

21. The flexible and mechanically resilient PV cell of any one of claims 1 to 20,

wherein the flexible and mechanically resilient PV cell is part of a device selected from the group consisting of:

vehicle, ship, aircraft, spacecraft,

Building, wall, roof tile, door,

Helmets, wearable articles, electronic devices.

22. A flexible and mechanically resilient Photovoltaic (PV) cell comprising:

PV cells formed from a single semiconductor wafer,

wherein the PV cell has a light absorbing surface facing the top,

wherein the PV cell has a bottom-facing light-absorbing surface opposite the top-facing light-absorbing surface;

wherein the PV cell is a bifacial PV cell configured to generate an electrical current by the PV effect (i) from light directly and/or indirectly reaching the top-facing light absorbing surface and (ii) from light directly and/or indirectly reaching the bottom-facing light absorbing surface;

wherein the PV cell comprises a plurality of non-overrunning pockets penetrated upwardly by the bottom-facing light absorbing surface toward the top-facing light absorbing surface but not reaching the top-facing light absorbing surface; wherein the non-overrunning pits penetrate up to between 80% and 99.9% of the height of the semiconductor wafer and segment the semiconductor wafer into a plurality of micro subregions;

wherein the surface area or coverage area of each sub-region measured at the top-facing light absorbing surface of the PV cell is in the range of 0.1 to 500 square millimeters;

Wherein the plurality of non-overrunning pockets and the plurality of micro-sub-regions provide the PV cell with improved mechanical resilience and mechanical shock absorption and shock dissipation characteristics;

wherein the PV cell further comprises:

a top side lead set mechanically coupled directly on top of the top facing light absorbing surface; wherein the topside lead set only collects and transfers charge of a first polarity type, negative or positive, generated by the PV effect;

a bottom side lead set mechanically connected directly below the bottom facing light absorbing surface; wherein the bottom side conductor sets collect and transport only charges of a second opposite polarity type, i.e. positive or negative, generated by the PV effect.

23. A method of producing a flexible and mechanically resilient Photovoltaic (PV) cell, the method comprising:

(a) Producing PV cells formed from individual semiconductor wafers,

wherein the PV cell has a sunny side surface configured to absorb light,

wherein the PV cell has a back-male side surface opposite the sunny side surface and not configured to absorb light;

wherein the PV cell is configured to generate an electrical current from light by the PV effect;

(b) Forming a plurality of non-overrunning pockets in the PV cell, the non-overrunning pockets penetrating upward from the back-male side surface toward the sunny side surface but not reaching the sunny side surface;

Wherein the non-overrunning pits penetrate up to between 80% and 99.9% of the height of the semiconductor wafer and segment the semiconductor wafer into a plurality of micro subregions;

wherein the surface area or coverage area of each sub-region measured at the sunny side surface of the PV cell is in the range of 0.1 to 500 square millimeters;

wherein the plurality of non-overrunning pockets and the plurality of micro-sub-regions provide the PV cell with improved mechanical resilience and mechanical shock absorption and shock dissipation characteristics;

(c) Placing a top-side wire set embedded within a top-side flexible transparent adhesive plastic foil over the sunny-side surface of the PV cell;

a heating process is performed at a temperature below 150 degrees celsius to melt and/or soften the topside flexible transparent adhesive plastic foil and to create a mechanical connection between (i) the conductors of the topside conductive set and (ii) the upper side of the sunny side surface of the PV cell, wherein the topside conductor set collects and transfers only one polarity type of charge generated by the PV effect, the charge being either negative or positive.

24. The method according to claim 23,

wherein the method further comprises, prior to or after or simultaneously with step (c):

Placing a bottom side lead set embedded within a bottom side flexible transparent adhesive plastic foil beneath the back-male side surface of the PV cell;

a heating process is performed at a temperature below 150 degrees celsius to melt and/or soften the bottom side flexible transparent adhesive plastic foil and create a mechanical connection between (i) the wires of the bottom side conductive set and (ii) the underside of the back-positive side surface of the PV cell, wherein the bottom side wire set collects and transfers only one polarity type of charge generated by the PV effect, which is either positive or negative and is opposite to the one polarity type of charge collected and transferred by the top side wire set.

25. The method according to any one of claim 23 to 24,

wherein said heating of said topside flexible transparent adhesive plastic foil is accomplished using heated rollers to form an air-free and bubble-free adhesion of said topside lead set to said sunny side surface of said PV cell;

wherein the heating process of the bottom side flexible transparent adhesive plastic foil is accomplished using heated rollers to form an air-free and bubble-free adhesion of the bottom side lead set to the back-side surface of the PV cell.

26. A method of producing a flexible and mechanically resilient Photovoltaic (PV) cell, the method comprising:

(a) Producing PV cells formed from individual semiconductor wafers,

wherein the PV cell has a light absorbing surface facing the top,

wherein the PV cell has a bottom-facing light-absorbing surface opposite the top-facing light-absorbing surface;

wherein the PV cell is a bifacial PV cell configured to generate an electrical current by the PV effect (i) from light directly and/or indirectly reaching the top-facing light absorbing surface and (ii) from light directly and/or indirectly reaching the bottom-facing light absorbing surface;

(b) Forming a plurality of non-overrunning pockets in the PV cell that penetrate upward from the bottom-facing light absorbing surface toward the top-facing light absorbing surface but do not reach the top-facing light absorbing surface;

wherein the non-overrunning pits penetrate up to between 80% and 99.9% of the height of the semiconductor wafer and segment the semiconductor wafer into a plurality of micro subregions;

wherein the surface area or coverage area of each sub-region measured at the top-facing light absorbing surface of the PV cell is in the range of 0.1 to 500 square millimeters;

Wherein the plurality of non-overrunning pockets and the plurality of micro-sub-regions provide the PV cell with improved mechanical resilience and mechanical shock absorption and shock dissipation characteristics;

(c) Placing a top-side wire set embedded within a top-side flexible transparent adhesive plastic foil over the top-facing light absorbing surface of the PV cell;

a heating process is performed at a temperature below 150 degrees celsius to melt and/or soften the topside flexible transparent adhesive plastic foil and create a mechanical connection between (i) the conductors of the topside conductive set and (ii) the upper side of the top facing light absorbing surface of the PV cell, wherein the topside conductor set only collects and transfers a unipolar type of charge generated by the PV effect, the charge being either a negative or a positive charge.

27. The method according to claim 26,

wherein the method comprises, prior to or after or simultaneously with step (c):

placing a bottom side lead set embedded within a bottom side flexible transparent adhesive plastic foil beneath the bottom facing light absorbing surface of the PV cell;

a heating process is performed at a temperature below 150 degrees celsius to melt and/or soften the bottom side flexible transparent adhesive plastic foil and create a mechanical connection between (i) the wires of the bottom side conductive set and (ii) the underside of the bottom facing light absorbing surface of the PV cell, wherein the bottom side wire set collects and transfers only one polarity type of charge generated by the PV effect, the charge being either positive or negative and opposite to the one polarity type of charge collected and transferred by the top side wire set.

28. The method according to any one of claim 26 to 27,

wherein said heating of said topside flexible transparent adhesive plastic foil is accomplished using heated rollers to form an air-free and bubble-free adhesion of said topside lead set to said sunny side surface of said PV cell;

wherein the heating process of the bottom side flexible transparent adhesive plastic foil is accomplished using heated rollers to form an air-free and bubble-free adhesion of the bottom side lead set to the back-side surface of the PV cell.

29. A system for producing a flexible and mechanically resilient Photovoltaic (PV) cell, the system comprising:

(a) A unit for the production of PV cells,

configured to produce PV cells formed from a single semiconductor wafer,

wherein the PV cell has a sunny side surface configured to absorb light,

wherein the PV cell has a back-male side surface opposite the sunny side surface and not configured to absorb light;

wherein the PV cell is configured to generate an electrical current from light by a PV effect;

(b) A pit production unit is not exceeded,

configured to form a plurality of non-overrunning pockets in the PV cell, the non-overrunning pockets penetrating upward from the back-male side surface toward the sun-facing side surface but not reaching the sun-facing side surface;

Wherein the non-overrunning pits penetrate up to between 80% and 99.9% of the height of the semiconductor wafer and segment the semiconductor wafer into a plurality of micro subregions;

wherein the surface area or coverage area of each sub-region measured at the sunny side surface of the PV cell is in the range of 0.1 to 500 square millimeters;

wherein the plurality of non-overrunning pockets and the plurality of micro-sub-regions provide the PV cell with improved mechanical resilience and mechanical shock absorption and shock dissipation characteristics;

(c) The placement and heating unit is provided with a heating device,

configured to place a top-side lead set embedded within a top-side flexible transparent adhesive plastic foil over the sunny side surface of the PV cell;

and performing a heating process at a temperature below 150 degrees celsius to melt and/or soften the topside flexible transparent adhesive plastic foil and create a mechanical connection between (i) the wires of the topside conductive set and (ii) the upper side of the sunny side surface of the PV cell, wherein the topside wire set collects and transfers only one polarity type of charge generated by the PV effect, the charge being a negative or positive charge.

30. A system for producing a flexible and mechanically resilient Photovoltaic (PV) cell, the system comprising:

(a) A unit for the production of PV cells,

configured to produce PV cells formed from a single semiconductor wafer,

wherein the PV cell has a light absorbing surface facing the top,

wherein the PV cell has a bottom-facing light-absorbing surface opposite the top-facing light-absorbing surface;

wherein the PV cell is a bifacial PV cell configured to generate an electrical current by a PV effect (i) from light directly and/or indirectly reaching the top-facing light absorbing surface and (ii) from light directly and/or indirectly reaching the bottom-facing light absorbing surface;

(b) A pit production unit is not exceeded,

configured to form a plurality of non-overrunning pockets in the PV cell that penetrate upward from the bottom-facing light absorbing surface toward the top-facing light absorbing surface but do not reach the top-facing light absorbing surface;

wherein the non-overrunning pits penetrate up to between 80% and 99.9% of the height of the semiconductor wafer and segment the semiconductor wafer into a plurality of micro subregions;

wherein the surface area or coverage area of each sub-region measured at the top-facing light absorbing surface of the PV cell is in the range of 0.1 to 500 square millimeters;

Wherein the plurality of non-overrunning pockets and the plurality of micro-sub-regions provide the PV cell with improved mechanical resilience and mechanical shock absorption and shock dissipation characteristics;

(c) The placement and heating unit is provided with a heating device,

configured to place a top-side wire set embedded within a top-side flexible transparent adhesive plastic foil over the top-facing light absorbing surface of the PV cell;

and performing a heating process at a temperature below 150 degrees celsius to melt and/or soften the topside flexible transparent adhesive plastic foil and create a mechanical connection between (i) the wires of the topside conductive set and (ii) the upper side of the top-facing light absorbing surface of the PV cell, wherein the topside wire set collects and transfers only a unipolar type of charge generated by the PV effect, the charge being a negative or positive charge.