CN116646299A - Electrostatic chuck and method for manufacturing the same - Google Patents
Electrostatic chuck and method for manufacturing the same Download PDFInfo
- Publication number
- CN116646299A CN116646299A CN202310684509.1A CN202310684509A CN116646299A CN 116646299 A CN116646299 A CN 116646299A CN 202310684509 A CN202310684509 A CN 202310684509A CN 116646299 A CN116646299 A CN 116646299A
- Authority
- CN
- China
- Prior art keywords
- thin film
- insulating layer
- film electrode
- electrode
- electrostatic chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010409 thin film Substances 0.000 claims abstract description 165
- 239000010408 film Substances 0.000 claims abstract description 25
- 238000009529 body temperature measurement Methods 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 5
- 239000000565 sealant Substances 0.000 claims description 5
- 229940105963 yttrium fluoride Drugs 0.000 claims description 5
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to the technical field of semiconductors, in particular to an electrostatic chuck and a preparation method thereof, wherein the electrostatic chuck comprises an electrode, a first insulating layer, a second insulating layer, a first film electrode and a second film electrode, and the first insulating layer is attached to the surface of the electrode; the first thin film electrode is attached to the first insulating layer; the second film electrode is attached to the first insulating layer, wherein the second film electrode is in contact with the first film electrode and forms at least one contact point for temperature measurement; the second insulating layer is attached to the first insulating layer with the first thin film electrode and the second thin film electrode between the first insulating layer and the second insulating layer. The electrostatic chuck can reliably detect temperature, and the whole structure is smaller, so that the original structure of the electrostatic chuck is not easy to damage.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an electrostatic chuck and a preparation method thereof.
Background
Semiconductor manufacturing systems such as etching systems, chemical vapor deposition systems, sputtering systems, and the like, provided by the related art are generally equipped with electrostatic chucks for holding wafers in a specific position so that the wafers can be processed in the manufacturing system. The electrostatic chuck includes a dielectric body formed of an insulator and an electrode formed of a conductor for generating dielectric polarization within the dielectric body; the electrode is connected with a high-voltage direct-current power supply; when a high voltage DC power supply applies a DC voltage to the electrodes, the medium body is polarized by the medium, while it exhibits attractive force; that is, the electrostatic chuck may attract and hold the wafer to its dielectric body with an attractive force generated by the application of a dc voltage.
In order to measure the temperature of the electrostatic chuck, the electrostatic chuck is provided with a metal thermocouple or an optical fiber; however, both of the above methods can increase the overall structure of the electrostatic chuck, and damage to the original structure of the electrostatic chuck is easily caused.
Disclosure of Invention
The invention aims to provide an electrostatic chuck and a preparation method thereof, wherein the overall structure of the electrostatic chuck is smaller, and the original structure is not easy to damage.
Embodiments of the present invention are implemented as follows:
in a first aspect, the present invention provides an electrostatic chuck comprising:
an electrode;
a first insulating layer attached to a surface of the electrode;
a first thin film electrode attached to the first insulating layer;
the second film electrode is attached to the first insulating layer, wherein the second film electrode is in contact with the first film electrode and forms at least one contact point for temperature measurement; the method comprises the steps of,
and a second insulating layer attached to the first insulating layer such that the first thin film electrode and the second thin film electrode are located between the first insulating layer and the second insulating layer.
In an alternative embodiment, the electrostatic chuck further comprises a wire, at least one of the first thin film electrode and the second thin film electrode being electrically connected to the wire.
In an alternative embodiment, the electrode is provided with a first wire outlet hole, the first insulating layer is provided with a second wire outlet hole, and the wire sequentially passes through the second wire outlet hole and the first wire outlet hole and passes out from one side of the electrode away from the first insulating layer.
In an alternative embodiment, at least one of the first wire hole and the second wire hole is filled with an insulating sealant.
In an alternative embodiment, the electrostatic chuck comprises a plurality of second thin film electrodes and a plurality of wires, the plurality of second thin film electrodes each contacting the first thin film electrode and forming a plurality of contact points; the plurality of leads are connected with the plurality of second film electrodes in a one-to-one correspondence manner, sequentially pass through the second wire outlet holes and the first wire outlet holes and pass out from one side of the electrodes, which is away from the first insulating layer; or alternatively, the process may be performed,
the electrostatic chuck comprises a plurality of second thin film electrodes, wherein the second thin film electrodes are contacted with the first thin film electrode and form a plurality of contact points; the plurality of second film electrodes are all connected with the lead.
In an alternative embodiment, the second thin film electrode contacts the first thin film electrode and forms a plurality of contact points, and the plurality of contact points are distributed in an annular array or rectangular array.
In an alternative embodiment, the thickness of the first insulating layer and the second insulating layer is 5-10 μm.
In a second aspect, the present invention provides a method for manufacturing an electrostatic chuck, comprising:
coating a first insulating layer on the electrode;
depositing a first thin film electrode on the first insulating layer;
depositing a second thin film electrode on the first insulating layer, and enabling the second thin film electrode to be in contact with the first thin film electrode so as to form at least one contact point for temperature measurement;
a second insulating layer is coated on the first insulating layer, and the first thin film electrode and the second thin film electrode are positioned between the first insulating layer and the second insulating layer.
In an alternative embodiment, the method for preparing an electrostatic chuck further comprises:
at least one of the first film electrode and the second film electrode is connected with a wire, and the wire sequentially passes through a second wire outlet hole arranged on the first insulating layer and a first wire outlet hole arranged on the electrode, so that the wire passes out from one side of the electrode, which is far away from the first insulating layer.
In an alternative embodiment, the first insulating layer and the second insulating layer include at least one of an aluminum oxide insulating layer, an aluminum nitride insulating layer, a yttrium oxide insulating layer, and a yttrium fluoride insulating layer;
the first thin film electrode includes In 2 O 3 One of the thin film electrode and the ITO thin film electrode, the second thin film electrode comprises In 2 O 3 The other of the thin film electrode and the ITO thin film electrode.
The electrostatic chuck and the preparation method thereof have the beneficial effects that: according to the preparation method of the electrostatic chuck, a first insulating layer is attached to an electrode, a first film electrode and a second film electrode are deposited and attached to the first insulating layer, and the second film electrode is in contact with the first film electrode to form at least one contact point for temperature measurement; in this way, the temperature measuring point formed by the mutual contact of the second film electrode and the first film electrode can be used as the film thermocouple for measuring the temperature, and the thickness dimension of the two film electrodes forming the film thermocouple is very small, so that the miniaturization design of the electrostatic chuck can be ensured, the integral structure of the electrostatic chuck is smaller, and the problem that the occupied space of the electrostatic chuck is increased due to the measurement of the temperature is solved; furthermore, two thin film electrodes are deposited on the first insulating layer to form a thin film thermocouple capable of being used for temperature measurement, so that damage to the structure of the electrode can be reduced, namely, the problem of damage to the structure of the electrostatic chuck can be solved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of an electrostatic chuck at a first viewing angle according to an embodiment of the present invention;
FIG. 2 is a schematic view of an electrostatic chuck at a second viewing angle according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an electrostatic chuck in accordance with some embodiments of the present invention;
fig. 4 is a schematic structural view of an electrostatic chuck according to another embodiment of the present invention.
Icon: 010-electrostatic chuck; 100-electrode; 110-a first wire outlet; 200-a first insulating layer; 210-a second wire outlet; 300-a first thin film electrode; 400-a second thin film electrode; 500-contact points; 600-a second insulating layer; 700-wire.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "upper", "lower", "vertical", "horizontal", etc., are directions or positional relationships based on those shown in the drawings, or those that are conventionally put in use, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed", "connected" and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Referring to fig. 1 and 2, the present embodiment provides an electrostatic chuck 010, which includes an electrode 100, a first insulating layer 200, a second insulating layer 600, a first thin film electrode 300 and a second thin film electrode 400, wherein the first insulating layer 200 is attached to a surface of the electrode 100; the first thin film electrode 300 is attached to the first insulating layer 200; the second thin film electrode 400 is attached to the first insulating layer 200, wherein the second thin film electrode 400 is in contact with the first thin film electrode 300 and forms at least one contact point 500 for temperature measurement; the second insulating layer 600 is attached to the first insulating layer 200 such that the first and second thin film electrodes 300 and 400 are located between the first and second insulating layers 200 and 600.
The electrostatic chuck 010 of the present embodiment attaches the first insulating layer 200 to the electrode 100, attaches the first thin film electrode 300 and the second thin film electrode 400 to the first insulating layer 200, and makes the second thin film electrode 400 contact with the first thin film electrode 300 to form at least one contact point 500 for temperature measurement; in this way, the temperature measuring point formed by the mutual contact of the second thin film electrode 400 and the first thin film electrode 300 can be used as a thin film thermocouple for measuring temperature, and the thickness dimension of the two thin film electrodes 100 forming the thin film thermocouple is very small, so that the miniaturization design of the electrostatic chuck 010 can be ensured, the whole structure of the electrostatic chuck 010 is smaller, and the problem that the occupied space of the electrostatic chuck 010 is increased due to the temperature measurement is solved; furthermore, two thin film electrodes 100 are deposited on the first insulating layer 200 to form a thin film thermocouple capable of measuring temperature, so that damage to the structure of the electrodes 100 themselves can be reduced, i.e., the problem of damage to the structure of the electrostatic chuck 010 itself can be improved.
Alternatively, the electrode 100 is an aluminum electrode, which is not particularly limited herein.
The contact between the first thin film electrode 300 and the second thin film electrode 400 may be: the two intersect and form an intersection point.
Further, the first insulating layer 200 and the second insulating layer 600 are both alumina insulating layers.
Of course, in other embodiments, the first insulating layer 200 and the second insulating layer 600 may be at least one of an aluminum nitride insulating layer, a yttrium oxide insulating layer, and a yttrium fluoride insulating layer, which are not particularly limited herein.
The purity of the raw materials such as alumina, aluminum nitride, yttrium oxide, and yttrium fluoride used for preparing the first insulating layer 200 and the second insulating layer 600 is preferably more than 99%, for example: 99.99%, 99.88%, etc., and are not particularly limited herein.
The thickness of the first insulating layer 200 may be selected as required, and in this embodiment, the thickness of the first insulating layer 200 is 10 μm. Of course, in other embodiments, the thickness of the first insulating layer 200 may be 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, etc., which is not particularly limited herein.
The thickness of the second insulating layer 600 may be selected as required, and in this embodiment, the thickness of the second insulating layer 600 is 10 μm. Of course, in other embodiments, the thickness of the second insulating layer 600 may be 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, etc., which is not particularly limited herein.
It should be understood that in the present embodiment, the thicknesses of the first insulating layer 200 and the second insulating layer 600 are the same; of course, in other embodiments, the thicknesses of the first insulating layer 200 and the second insulating layer 600 may also be different, which is not specifically limited herein.
Alternatively, in some embodiments, in order to improve the stability of the first insulating layer 200 attached to the electrode 100, the first insulating layer 200 may be bonded to the electrode 100 with an adhesive such as an adhesive resin, for example: after the first insulating layer 200 is formed on the electrode 100 by spraying, a layer of adhesive is coated on the surface of the first insulating layer 200, so that the first insulating layer 200 is stably adhered to the electrode 100.
In the present embodiment, the first thin film electrode 300 includes In 2 O 3 One of the (indium oxide) thin film electrode 100 and the ITO (indium tin oxide) thin film electrode 100, the second thin film electrode 400 includes In 2 O 3 The other of the thin film electrode 100 and the ITO thin film electrode 100.
Aluminum oxide is used as the insulating layer, which is mixed with In 2 O 3 The thin film electrode 100 and the ITO thin film electrode 100 have similar thermal expansion coefficients so as to ensure sensitivity of temperature measurement.
Alternatively, the first and second thin film electrodes 300 and 400 may be deposited on the first insulating layer 200 by magnetron sputtering, atomic deposition, or the like.
Alternatively, the thickness of the first thin film electrode 300 may be less than or equal to 1 μm, for example: 1 μm, 0.8 μm, 0.5 μm, etc., and are not particularly limited herein.
Alternatively, the thickness of the second thin film electrode 400 may be less than or equal to 1 μm, for example: 1 μm, 0.8 μm, 0.5 μm, etc., and are not particularly limited herein.
To improve the operability of detecting the temperature of the electrostatic chuck 010; referring to fig. 1 and 2, the electrostatic chuck 010 further includes a wire 700, and at least one of the first and second thin film electrodes 300 and 400 is electrically connected to the wire 700. In this way, the temperature of the temperature measuring point formed by the contact of the first thin film electrode 300 and the second thin film electrode 400 can be detected by the wire 700, that is, the temperature of the position where the thin film thermocouple is formed by the contact of the first thin film electrode 300 and the second thin film electrode 400 can be detected by the wire 700, so as to realize the detection of the temperature of the electrostatic chuck 010.
Further, the electrode 100 is provided with a first wire outlet hole 110, the first insulating layer 200 is provided with a second wire outlet hole 210, and the wire 700 sequentially passes through the second wire outlet hole 210 and the first wire outlet hole 110 and passes out from one side of the electrode 100 away from the first insulating layer 200. In this way, the temperature where the first thin film electrode 300 and the second thin film electrode 400 are in contact with each other to form the thin film thermocouple is ensured to be detected by the lead 700, so that the operability of detecting the temperature of the electrostatic chuck 010 is realized, and only the wire outlet holes are required to be formed in the electrode 100 and the first insulating layer 200, so that the damage to the electrode 100 and the first insulating layer 200 can be reduced, that is, the problem of structural damage to the electrostatic chuck 010 itself is improved.
Alternatively, the first wire outlet holes 110 are distributed opposite to the second wire outlet holes 210. Of course, in other embodiments, the first wire outlet holes 110 and the second wire outlet holes 210 may also be distributed in a staggered manner, and form a local communication.
In detecting the temperature of the electrostatic chuck 010, it is generally necessary to perform multi-point detection, that is, to detect the temperature of the electrostatic chuck 010 at a plurality of points; in order to achieve multi-point temperature detection, the electrostatic chuck 010 of the present embodiment includes a plurality of second thin film electrodes 400, and the plurality of second thin film electrodes 400 are each in contact with the first thin film electrode 300 and form a plurality of contact points 500. In this way, a plurality of contact points 500 can form a plurality of thin film thermal coupling temperature measuring points, and the temperature of the plurality of contact points 500 is detected, so that the purpose of multipoint temperature measurement of the electrostatic chuck 010 can be realized.
To reduce damage to the structure of the electrostatic chuck 010 itself; the electrostatic chuck 010 of the present embodiment further includes a plurality of conductive wires 700, the plurality of conductive wires 700 are connected to the plurality of second thin film electrodes 400 in a one-to-one correspondence, and the plurality of conductive wires 700 sequentially pass through the second wire outlet hole 210 and the first wire outlet hole 110 and pass out from a side of the electrode 100 facing away from the first insulating layer 200. In this way, the electrode 100 may be provided with only one first wire hole 110, and the first insulating layer 200 may be provided with only one second wire hole 210, so as to reduce damage to the electrode 100 and the first insulating layer 200, that is, damage to the structure of the electrostatic chuck 010 itself.
It should be appreciated that in other embodiments, a plurality of second thin film electrodes 400 may be connected to the same wire 700, and the wire 700 is sequentially passed through the second wire hole 210 and the first wire hole 110, and is passed out from a side of the electrode 100 facing away from the first insulating layer 200. Thus, the number of the wires 700 can be reduced, the cost can be reduced, and the preparation process steps of the electrostatic chuck 010 can be simplified, which is beneficial to improving the production efficiency.
In order to improve the assembly stability of the wire 700, the problems that the wire 700 is easily pulled, broken and the like are improved; the first and second wire holes 110 and 210 are filled with an insulating sealant. Thus, the wire 700 can be stably connected to the electrode 100 and the first insulating layer 200, and the stability can be improved, thereby ensuring that the temperature can be reliably detected by the wire 700.
Of course, in other embodiments, the insulating sealant may be filled only in the first wire hole 110 or the second wire hole 210.
Referring to fig. 3, in some embodiments, the plurality of second thin film electrodes 400 are distributed in a reflective manner with the center point of the second wire outlet hole 210 as the center; the first film electrode 300 is in a ring shape, and the center of the circle coincides with the center point of the second wire outlet hole 210; the plurality of contact points 500 formed by the plurality of second thin film electrodes 400 contacting the first thin film electrodes 300 are distributed in an annular array. In this way, the multi-point temperature of the electrostatic clamp 010 can be detected relatively uniformly.
Further, the electrostatic chuck 010 includes two first thin film electrodes 300, the two first thin film electrodes 300 are concentrically arranged, and a radius of one first thin film electrode 300 is smaller than a radius of the other first thin film electrode 300; a part of the plurality of second thin film electrodes 400 is in contact with the first thin film electrode 300 having a small radius, forming a plurality of contact points 500 of a part thereof; another portion of the plurality of second thin film electrodes 400 is in contact with the first thin film electrode 300 having a large radius, forming a plurality of contact points 500 of the other portion thereof. In this way, two circles of multiple contact points 500 in an annular array may be formed for multi-point temperature detection.
The length of the second thin film electrode 400 contacting the first thin film electrode 300 having a small radius is smaller than that of the second thin film electrode 400 contacting the first thin film electrode 300 having a large radius.
It should be noted that the number of the first thin film electrodes 300 and the second thin film electrodes 400 is not particularly limited; in other embodiments, the number of the first thin film electrodes 300 may be one, three, etc., and the number of the second thin film electrodes 400 may be one, two, three, four, ten, etc.
Referring to fig. 4, in other embodiments, the electrostatic chuck 010 includes a plurality of first thin film electrodes 300 and a plurality of second thin film electrodes 400, the plurality of first thin film electrodes 300 are sequentially spaced apart in a lateral direction, the plurality of second thin film electrodes 400 are sequentially spaced apart in a vertical direction, and the plurality of first thin film electrodes 300 and the plurality of second thin film electrodes 400 form a plurality of contact points 500 distributed in a rectangular array; in this way, the multipoint temperature detection can be reliably performed.
The present embodiment also provides a method of manufacturing the electrostatic chuck 010, which includes coating the first insulating layer 200 on the electrode 100; depositing a first thin film electrode 300 on the first insulating layer 200; depositing a second thin film electrode 400 on the first insulating layer 200, and contacting the second thin film electrode 400 with the first thin film electrode 300 to form at least one contact point 500 for temperature measurement; the second insulating layer 600 is coated on the first insulating layer 200 such that the first and second thin film electrodes 300 and 400 are positioned between the first and second insulating layers 200 and 600.
Forming at least one contact point 500 for temperature measurement by depositing and attaching the first and second thin film electrodes 300 and 400 on the first insulating layer 200 and bringing the second thin film electrode 400 and the first thin film electrode 300 into contact; in this way, the temperature measuring point formed by the mutual contact of the second thin film electrode 400 and the first thin film electrode 300 can be used as a thin film thermocouple for measuring temperature, and the thickness dimension of the two thin film electrodes 100 forming the thin film thermocouple is very small, so that the miniaturization design of the electrostatic chuck 010 can be ensured, the whole structure of the electrostatic chuck 010 is smaller, and the problem that the occupied space of the electrostatic chuck 010 is increased due to the temperature measurement is solved; furthermore, two thin film electrodes 100 are deposited on the first insulating layer 200 to form a thin film thermocouple capable of measuring temperature, so that damage to the structure of the electrodes 100 themselves can be reduced, i.e., the problem of damage to the structure of the electrostatic chuck 010 itself can be improved.
Further, the method further includes connecting a wire 700 to at least one of the first and second thin film electrodes 300 and 400, and sequentially passing the wire 700 through the second wire hole 210 provided in the first insulating layer 200 and the first wire hole 110 provided in the electrode 100 such that the wire 700 passes out from a side of the electrode 100 facing away from the first insulating layer 200. Specifically, the wire 700 is soldered or glued to one of the first and second thin film electrodes 300 and 400 by conductive silver paste before the first insulating layer 200 is attached to the second insulating layer 600.
Still further, after the lead 700 is connected to at least one of the first and second thin film electrodes 300 and 400, the lead 700 is penetrated out of the second and first wire holes 210 and 110, and then the insulating sealant is filled in the first and second wire holes 110 and 210.
Optionally, the method of coating the first insulating layer 200 on the electrode 100 includes: aluminum oxide, aluminum nitride, yttrium oxide, or yttrium fluoride is melted at high temperature, uniformly sprayed on the electrode 100, and then polished to a target thickness, for example: 5-10 μm.
Further, before the insulating layer is formed by spraying, the surface of the electrode 100 may be subjected to sand blasting.
The insulating layer may be sprayed by plasma spraying, which is not particularly limited herein.
Alternatively, an adhesive may be further applied to the first insulating layer 200 to more firmly attach the first insulating layer 200 to the electrode 100.
It should be noted that, the manner of preparing the second insulating layer 600 is known from the manner of preparing the first insulating layer 200, and will not be described herein.
Alternatively, the first thin film electrode 300 and the second thin film electrode 400 may be selected from an atomic deposition method, a magnetron sputtering method, and the like, which are not particularly limited herein.
In depositing the first thin film electrode 300 and the second thin film electrode 400, masking may be performed on the surface of the first insulating layer 200, for example: the surface of the first insulating layer 200 is covered with a blanket layer, and the blanket layer has the shape of the first thin film electrode 300 and the second thin film electrode 400 to be deposited, so as to ensure that the first thin film electrode 300 and the second thin film electrode 400 with target patterns are deposited later. Further, after the first insulating layer 200 covers the floodcoat, the first insulating layer 200 may be further subjected to sandblasting.
It should be further noted that, when the first thin film electrode 300 and the second thin film electrode 400 are deposited, the first thin film electrode 300 may be deposited and then the second thin film electrode 400 may be deposited, and the deposition time may be controlled to be 15 to 20s (for example, 15s, 16s, 17s, 18s, 19s, 20s, etc.), that is, the plasma duration may be controlled to be 15 to 20s during the deposition, and the temperature of the electrode 100 may be controlled to be 270 to 300 ℃, for example: 270 ℃, 280 ℃, 290 ℃, 300 ℃ and the like.
The electrostatic chuck 010 of the present embodiment can detect the temperature of the electrostatic chuck 010 by detecting the temperature of the contact point 500 formed by the contact of the first and second thin film electrodes 300 and 400 through the wire 700.
In summary, the electrostatic chuck 010 of the present invention not only can reliably detect the temperature, but also can ensure that the overall structure thereof is small, and the original structure of the electrostatic chuck 010 is not easily damaged.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An electrostatic chuck, comprising:
an electrode (100);
a first insulating layer (200), wherein the first insulating layer (200) is attached to the surface of the electrode (100);
-a first thin film electrode (300), the first thin film electrode (300) being attached to the first insulating layer (200);
-a second thin film electrode (400), the second thin film electrode (400) being attached to the first insulating layer (200), wherein the second thin film electrode (400) is in contact with the first thin film electrode (300) and forms at least one contact point (500) for temperature measurement; the method comprises the steps of,
-a second insulating layer (600), the second insulating layer (600) being attached to the first insulating layer (200) with the first thin film electrode (300) and the second thin film electrode (400) being located between the first insulating layer (200) and the second insulating layer (600).
2. The electrostatic chuck of claim 1, further comprising a wire (700), at least one of the first thin film electrode (300) and the second thin film electrode (400) being electrically connected to the wire (700).
3. The electrostatic chuck of claim 2, wherein the electrode (100) is provided with a first wire outlet (110), the first insulating layer (200) is provided with a second wire outlet (210), and the wire (700) sequentially passes through the second wire outlet (210) and the first wire outlet (110) and out from a side of the electrode (100) facing away from the first insulating layer (200).
4. An electrostatic chuck according to claim 3, wherein at least one of the first wire hole (110) and the second wire hole (210) is filled with an insulating sealant.
5. An electrostatic chuck according to claim 3, characterized in that it comprises a plurality of said second thin film electrodes (400) and a plurality of said wires (700), a plurality of said second thin film electrodes (400) each being in contact with said first thin film electrode (300) and forming a plurality of said contact points (500); the plurality of leads (700) are connected with the plurality of second film electrodes (400) in a one-to-one correspondence manner, and the plurality of leads (700) sequentially pass through the second wire outlet holes (210) and the first wire outlet holes (110) and pass out from one side of the electrode (100) away from the first insulating layer (200); or alternatively, the process may be performed,
the electrostatic chuck comprises a plurality of the second thin film electrodes (400), wherein the plurality of the second thin film electrodes (400) are contacted with the first thin film electrode (300) and form a plurality of contact points (500); a plurality of the second thin film electrodes (400) are connected to the lead (700).
6. The electrostatic chuck of claim 1, wherein said second thin film electrode (400) is in contact with said first thin film electrode (300) and forms a plurality of said contact points (500), a plurality of said contact points (500) being distributed in an annular array or rectangular array.
7. The electrostatic clamp of claim 1, wherein said first insulating layer (200) and said second insulating layer (600) have a thickness of 5-10 μm.
8. A method of manufacturing an electrostatic chuck, comprising:
coating a first insulating layer (200) on the electrode (100);
depositing a first thin film electrode (300) on the first insulating layer (200);
depositing a second thin film electrode (400) on the first insulating layer (200), and contacting the second thin film electrode (400) with the first thin film electrode (300) to form at least one contact point (500) for temperature measurement;
a second insulating layer (600) is coated on the first insulating layer (200), and the first thin film electrode (300) and the second thin film electrode (400) are positioned between the first insulating layer (200) and the second insulating layer (600).
9. The method of manufacturing an electrostatic chuck of claim 8, further comprising:
and connecting a wire (700) to at least one of the first film electrode (300) and the second film electrode (400), and sequentially passing the wire (700) through a second wire outlet hole (210) formed in the first insulating layer (200) and a first wire outlet hole (110) formed in the electrode (100) so that the wire (700) passes out from one side of the electrode (100) away from the first insulating layer (200).
10. The method of manufacturing an electrostatic chuck according to claim 8, wherein the first insulating layer (200) and the second insulating layer (600) comprise at least one of an aluminum oxide insulating layer, an aluminum nitride insulating layer, an yttrium oxide insulating layer, and an yttrium fluoride insulating layer;
the first thin film electrode (300) includes In 2 O 3 One of a thin film electrode (100) and an ITO thin film electrode (100), the second thin film electrode (400) including the In 2 O 3 -a thin film electrode (100) and-the other of said ITO thin film electrode (100).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310684509.1A CN116646299A (en) | 2023-06-09 | 2023-06-09 | Electrostatic chuck and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310684509.1A CN116646299A (en) | 2023-06-09 | 2023-06-09 | Electrostatic chuck and method for manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116646299A true CN116646299A (en) | 2023-08-25 |
Family
ID=87622919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310684509.1A Pending CN116646299A (en) | 2023-06-09 | 2023-06-09 | Electrostatic chuck and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116646299A (en) |
-
2023
- 2023-06-09 CN CN202310684509.1A patent/CN116646299A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100511854B1 (en) | Electrostatic chuck device | |
| US4724510A (en) | Electrostatic wafer clamp | |
| EP2466633B1 (en) | High efficiency electrostatic chuck assembly for semiconductor wafer processing | |
| EP1662559B1 (en) | Method of processing objects comprising a surface portion made of an insulator | |
| US10304714B2 (en) | Device comprising film for electrostatic coupling of a substrate to a substrate carrier | |
| US20110026187A1 (en) | Conductive Seal Ring Electrostatic Chuck | |
| US20060108231A1 (en) | Installation for processing a substrate | |
| US8829397B2 (en) | Corrosion-resistant multilayer ceramic member | |
| CN103021781A (en) | Apparatus for measuring a set of electrical characteristics in a plasma | |
| KR101134736B1 (en) | Electrostatic chuck having spacer | |
| US20080080118A1 (en) | Electrostatic chuck | |
| US20020115263A1 (en) | Method and related apparatus of processing a substrate | |
| CN103426838A (en) | Chip package and method for forming the same | |
| US5754171A (en) | Display device having integrated circuit chips thereon | |
| CN116646299A (en) | Electrostatic chuck and method for manufacturing the same | |
| KR100652244B1 (en) | a Electrostatic Chuck with the elix-shape electrode and a method for manufacturing thereof | |
| KR20100137679A (en) | Glass electrostatic chuck and fabrication method thereof | |
| CN111830295B (en) | Device for testing electrical performance of micro-component | |
| CN108428661A (en) | A kind of substrate bearing platform and its manufacturing method for vacuum treatment installation | |
| KR20200138982A (en) | Transparent electro static chuck including ito and manufacturing method for the same | |
| CN112781779A (en) | High-electric-resistance film pressure sensor and preparation method thereof | |
| US20120193813A1 (en) | Wiring structure of semiconductor device and method of manufacturing the wiring structure | |
| KR20020041448A (en) | Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure | |
| CN111323460A (en) | Sensing element and method for detecting electrostatic adsorption chuck by using same | |
| US20140194294A1 (en) | Method for producing superconducting coils and apparatus having a superconducting coil produced in accordance with the method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |