CN116646256A - Processing method before packaging gallium nitride power device and packaging structure - Google Patents
Processing method before packaging gallium nitride power device and packaging structure Download PDFInfo
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- CN116646256A CN116646256A CN202310610675.7A CN202310610675A CN116646256A CN 116646256 A CN116646256 A CN 116646256A CN 202310610675 A CN202310610675 A CN 202310610675A CN 116646256 A CN116646256 A CN 116646256A
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 150
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 98
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 33
- 238000003672 processing method Methods 0.000 title claims abstract description 16
- 239000011810 insulating material Substances 0.000 claims abstract description 135
- 239000010410 layer Substances 0.000 claims abstract description 76
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 68
- 239000012790 adhesive layer Substances 0.000 claims abstract description 39
- 238000000576 coating method Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 19
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 1
- 230000005611 electricity Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 5
- 239000003292 glue Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
Abstract
The invention provides a processing method and a packaging structure before packaging a gallium nitride power device, wherein the processing method comprises the following steps: providing a gallium nitride wafer to be packaged; forming an insulating material or semi-insulating material layer on the back surface of the gallium nitride wafer by adopting a coating process; cutting the gallium nitride wafer to form a plurality of gallium nitride chips; and adhering one surface of the gallium nitride chip, on which the insulating material or semi-insulating material layer is formed, to the metal backboard through the conductive adhesive layer. According to the gallium nitride power device, the insulating material or the semi-insulating material layer is formed on the back surface of the gallium nitride wafer by adopting a coating process, the uniformity and the thickness of the insulating material or the semi-insulating material layer are easier to control, the uniformity of the insulating material or the semi-insulating material layer is improved, electric leakage can be prevented, the gallium nitride chip is adhered to the metal back plate through the conductive adhesive layer, the conductive adhesive layer can conduct electricity, the current cannot be influenced, and the combination of the insulating material or the semi-insulating material layer and the conductive adhesive layer enables the gallium nitride power device to control the current better, and the performance of the gallium nitride power device is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor integrated circuits, in particular to a processing method before packaging a gallium nitride power device and a gallium nitride power device packaging structure.
Background
In recent years, gallium nitride (GaN) power devices (hereinafter, abbreviated as gallium nitride power devices, also abbreviated as gallium nitride power chips) of high-voltage power switch chips are attracting attention of scientific researchers gradually due to their advantages of high breakdown voltage, small on-resistance, high conversion efficiency, and the like, and are expected to replace silicon (Si) and silicon carbide (SiC) as main power devices.
Existing packaging techniques and methods typically adhere gallium nitride chips directly to metal backplates through electrically insulating and thermally conductive glue. Fig. 1 is a schematic diagram of a prior art package for a gallium nitride power device. Referring to fig. 1, a gallium nitride chip 103 is adhered to a metal back plate 106 through an electrically insulating and thermally conductive adhesive layer 101; the source S of the gallium nitride chip 103 is connected to the metal back plate 106 by a third bonding wire 105c by wire bonding; the drain electrode D and the gate electrode G of the gallium nitride chip 103 are connected to the drain metal lead 102a and the gate metal lead 102b on the package frame (not shown) through the first bonding lead 105a and the second bonding lead 105b by using a wire bonding method, respectively; some packages may also have a backplane metal lead 107 connected to the metal backplane 106. When used in an external circuit, gallium nitride die 103 may be soldered to the circuit board by metal backplate 106 and drain metal leads 102a, gate metal leads 102 b. If the package also contains backplate metal leads 107, the backplate metal leads 107 may optionally be connected to one electrode, to a circuit board, or may be left suspended, as desired by the design. Finally, the portions are sealed by the housing 104.
However, for gallium nitride chips, the manner in which the gallium nitride chips are directly adhered to the metal back plate may result in poor control of the current of the gallium nitride power device, so that the performance of the gallium nitride power device is affected.
Disclosure of Invention
The invention aims to provide a processing method and a packaging structure before packaging a gallium nitride power device, so that the gallium nitride power device can better control current and the performance of the gallium nitride power device is improved.
In order to solve the above technical problems, according to a first aspect of the present invention, there is provided a processing method before packaging a gallium nitride power device, including the steps of:
providing a gallium nitride wafer to be packaged;
forming an insulating material or semi-insulating material layer on the back surface of the gallium nitride wafer by adopting a coating process;
cutting the gallium nitride wafer to form a plurality of gallium nitride chips; the method comprises the steps of,
and adhering one surface of the gallium nitride chip, on which the insulating material or semi-insulating material layer is formed, to a metal backboard through a conductive adhesive layer.
Optionally, before forming the insulating material or semi-insulating material layer on the back surface of the gallium nitride wafer, the method further comprises: and thinning the back surface of the gallium nitride wafer.
Optionally, the thickness of the insulating material or semi-insulating material layer is greater than or equal to 10nm and less than or equal to 1000nm.
Optionally, the coating method comprises thermal evaporation, an atomic layer deposition coating method, a chemical vapor deposition coating method or a physical vapor deposition coating method.
In order to solve the above technical problem, according to a second aspect of the present invention, there is further provided a gallium nitride power device package structure, including:
a metal backplate;
a conductive adhesive layer positioned on the metal backboard;
the back surface of the gallium nitride chip is adhered to the metal backboard through the conductive adhesive layer; the method comprises the steps of,
and an insulating material or semi-insulating material layer positioned between the gallium nitride chip and the conductive adhesive layer.
Optionally, the gallium nitride chip is provided with a chip gate, a chip source and a chip drain.
Optionally, the package structure further includes a package frame, the chip drain is connected to the drain metal lead of the package frame through a first bonding lead, the chip gate is connected to the gate metal lead of the package frame through a second bonding lead, and the chip source is connected to the metal back plate through a third bonding lead.
Optionally, the packaging structure further includes a housing, and the housing seals the gallium nitride chip and the metal back plate.
Optionally, the thickness of the insulating material or semi-insulating material layer is greater than or equal to 10nm and less than or equal to 1000nm.
Optionally, the package structure further includes a back plate metal lead, and the back plate metal lead is connected with the metal back plate.
In summary, in the processing method and the packaging structure before packaging the gallium nitride power device provided by the invention, before packaging the gallium nitride power device, firstly, a gallium nitride wafer to be packaged is provided, then, a coating process is adopted to form an insulating material or semi-insulating material layer on the back surface of the gallium nitride wafer, then, the gallium nitride wafer is cut to form a plurality of gallium nitride chips, and then, one surface, on which the insulating material or semi-insulating material layer is formed, of the gallium nitride chips is attached to a metal backboard through conductive adhesive. According to the invention, the insulating material or semi-insulating material layer is formed on the back surface of the gallium nitride wafer by adopting a coating process, the uniformity and thickness of the insulating material or semi-insulating material layer are easier to control, the uniformity of the insulating material or semi-insulating material layer is improved, electric leakage can be prevented, the gallium nitride chip formed with the insulating material or semi-insulating material layer is adhered to the metal backboard through the conductive adhesive layer, the conductive adhesive layer can conduct electricity, no influence is caused on current, and the combination of the insulating material or semi-insulating material layer and the conductive adhesive layer enables the gallium nitride power device to control current better, and the performance of the gallium nitride power device is improved.
Drawings
Those of ordinary skill in the art will appreciate that the figures are provided for a better understanding of the present invention and do not constitute any limitation on the scope of the present invention. Wherein:
fig. 1 is a schematic diagram of a prior art package for a gallium nitride power device.
Fig. 2 is a flowchart of a processing method before packaging a gan power device according to an embodiment of the invention.
Fig. 3 is a schematic view of a wafer formed with a layer of insulating or semi-insulating material according to an embodiment of the present invention.
Fig. 4 is a schematic package diagram of a gan power device according to an embodiment of the invention.
In the accompanying drawings:
10-gallium nitride wafer; 101-an electrically insulating and thermally conductive glue layer; 102 a-drain metal leads; 102 b-gate metal leads; a 103-gallium nitride chip; 104-a housing; 105 a-a first bonding wire; 105 b-a second bonding wire; 105 c-third bonding wire; 106-a metal backplate; 107-backplate metal leads; 108-a layer of insulating material or semi-insulating material; 109-conductive glue layer.
Detailed Description
The inventor finds that the conductivity and uniformity of the electric insulation and heat conduction adhesive layer are difficult to control, the electric insulation is not absolute, tiny electric leakage exists, the poor uniformity can lead to thick adhesive layer places and thin adhesive layer places, and electric leakage exists in the thin adhesive layer places, so that the electric current of the gallium nitride power device is not controlled well, and the performance of the gallium nitride power device is affected.
Through further research, the inventor provides a processing method and a packaging structure before packaging the gallium nitride power device, so that the gallium nitride power device can better control current and improve the performance of the gallium nitride power device.
The invention provides a processing method before packaging a gallium nitride power device, which comprises the following steps: providing a gallium nitride wafer to be packaged; forming an insulating material or semi-insulating material layer on the back surface of the gallium nitride wafer by adopting a coating process; cutting the gallium nitride wafer to form a plurality of gallium nitride chips; and adhering one surface of the gallium nitride chip, on which the insulating material or semi-insulating material layer is formed, to a metal backboard through a conductive adhesive layer.
The invention also provides a gallium nitride power device packaging structure, which comprises: a metal backplate; a conductive adhesive layer positioned on the metal backboard; the back surface of the gallium nitride chip is adhered to the metal backboard through the conductive adhesive layer; and an insulating material or semi-insulating material layer positioned between the gallium nitride chip and the conductive adhesive layer.
According to the processing method and the packaging structure before packaging the gallium nitride power device, the insulating material or the semi-insulating material layer is formed on the back surface of the gallium nitride wafer by adopting a coating process, the uniformity and the thickness of the insulating material or the semi-insulating material layer are easier to control, the uniformity of the insulating material or the semi-insulating material layer is improved, electric leakage can be prevented, the gallium nitride chip formed with the insulating material or the semi-insulating material layer is adhered to the metal backboard through the conductive adhesive layer, the conductive adhesive layer can conduct electricity, the current is not influenced, and the gallium nitride power device can better control the current by combining the insulating material or the semi-insulating material layer and the conductive adhesive layer, and the performance of the gallium nitride power device is improved.
The invention will be described in further detail with reference to the drawings and the specific embodiments thereof in order to make the objects, advantages and features of the invention more apparent. It should be noted that the drawings are in a very simplified form and are not drawn to scale, merely for convenience and clarity in aiding in the description of embodiments of the invention. Furthermore, the structures shown in the drawings are often part of actual structures. In particular, the drawings are shown with different emphasis instead being placed upon illustrating the various embodiments.
As used in this disclosure, the singular forms "a," "an," and "the" include plural referents unless the content clearly dictates otherwise. As used in this disclosure, the term "or" is generally employed in its sense including "and/or" unless the content clearly dictates otherwise. As used in this disclosure, the term "plurality" is generally employed in its sense including "at least one" unless the content clearly dictates otherwise. As used in this disclosure, the term "at least two" is generally employed in its sense including "two or more", unless the content clearly dictates otherwise. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", "a third" may include one or at least two such features, either explicitly or implicitly.
Fig. 2 is a flowchart of a processing method before packaging a gan power device according to an embodiment of the invention. As shown in fig. 2, the processing method before packaging the gallium nitride power device includes the following steps:
step S1: providing a gallium nitride wafer to be packaged;
step S2: forming an insulating material or semi-insulating material layer on the back surface of the gallium nitride wafer by adopting a coating process;
step S3: cutting the gallium nitride wafer to form a plurality of gallium nitride chips; the method comprises the steps of,
step S4: and adhering one surface of the gallium nitride chip, on which the insulating material or semi-insulating material layer is formed, to the metal backboard through a conductive adhesive layer.
Fig. 3 is a schematic diagram of a wafer with an insulating material or semi-insulating material layer formed thereon according to an embodiment of the present invention, and fig. 4 is a schematic diagram of a package of a gan power device according to an embodiment of the present invention. Next, a method for processing a gallium nitride power device before packaging according to an embodiment of the invention will be described in detail with reference to fig. 2, 3, and 4.
In step S01, referring to fig. 3, a gallium nitride wafer 10 to be packaged is provided.
The gallium nitride wafer 10 is integrated with a plurality of chips, the gallium nitride wafer 10 includes a gallium nitride wafer front surface on which a functional layer is formed and a gallium nitride wafer back surface opposite to the gallium nitride wafer front surface, and in fig. 3, the upward facing surface of the gallium nitride wafer 10 is the front surface of the gallium nitride wafer, and the downward facing surface is the back surface of the gallium nitride wafer.
Illustratively, the gallium nitride wafer 10 includes: the device comprises a substrate and a gallium nitride layer positioned on the surface of the substrate, wherein a device is formed on the surface of the gallium nitride layer. The side of the device away from the substrate is the front side of the gallium nitride wafer 10, and the side of the substrate away from the device is the back side of the gallium nitride wafer 10.
In this embodiment, the front surface of the gan wafer 10 has a plurality of chips, and dicing channels are preset on the front surface of the gan wafer 10 as dicing positions.
Then, the back surface of the gallium nitride wafer 10 is thinned.
The thinning treatment can be carried out before the delivery of the film-making factory or the thinning treatment can be carried out in the packaging factory. In this embodiment, the thinning of the back surface of the gallium nitride wafer 10 may use a polishing process, where the polishing process may include: firstly, carrying out a rough grinding process, then carrying out a fine grinding process, and finally carrying out a dry polishing process. Rough grinding is used to remove most of the gallium nitride wafer 10 to be removed, fine grinding is performed to a thickness close to the required thickness, the grinding plane is close to flat, and dry polishing is performed to make the gallium nitride wafer 10 have a flat structure.
Before the back surface of the gallium nitride wafer 10 is thinned, a protection film (not shown) may be formed on the front surface of the gallium nitride wafer 10, and the protection film may be used to protect the front surface of the gallium nitride wafer 10 when the back surface of the gallium nitride wafer 10 is thinned. After the back surface thinning of the gallium nitride wafer 10 is completed, the protective film is removed.
In step S2, referring to fig. 3, a coating process is used to form an insulating material or semi-insulating material layer 108 on the back surface of the gan wafer 10.
The insulating material or semi-insulating material layer 108 may be an insulating material or a semi-insulating material, which may be any insulating material known to those skilled in the art to be formed on the gan wafer 10, or any semi-insulating material known to those skilled in the art to be formed on the gan wafer 10, and the present invention is not limited to the insulating material or semi-insulating material layer 108.
In this embodiment, the insulating material or semi-insulating material layer 108 may be formed by a plating method, for example, but not limited to, thermal evaporation, atomic layer deposition, chemical vapor deposition, or physical vapor deposition, to form the insulating material or semi-insulating material layer 108.
In this embodiment, the thickness of the insulating material or semi-insulating material layer 108 is greater than or equal to 10nm and less than or equal to 1000nm, for example, the thickness of the insulating material or semi-insulating material layer 108 is 10nm, 50nm, 100nm, 200nm, 400nm, 800nm or 1000nm, but not limited thereto. The thickness of the insulating material or the semi-insulating material layer 108 may be the same as or different from the thickness of the insulating material or the semi-insulating material layer 108, and may be selected according to actual requirements.
The insulating material or semi-insulating material layer 108 is formed on the back surface of the gallium nitride wafer 10 by a film plating process, and the uniformity and thickness of the film are easier to control, i.e. the uniformity of the formed insulating material or semi-insulating material layer 108 is improved, so that electric leakage can be prevented.
In step S3, referring to fig. 3 and fig. 4, the gan wafer 10 is diced to form a plurality of gan chips 103.
The gan wafer 10 is diced along dicing lines preset on the front surface of the gan wafer 10, so as to form a plurality of gan chips 103. Referring to fig. 4, the gan chip 103 is provided with a chip gate G, a chip source S and a chip drain D.
In step S4, referring to fig. 4, a surface of the gallium nitride chip 103 on which the insulating material or semi-insulating material layer 108 is formed is adhered to the metal back plate 106 through the conductive adhesive layer 109.
Illustratively, the metal back plate 106 is provided, a conductive adhesive layer 109 is coated on a side of the gallium nitride chip 103 on which the insulating material layer or the semi-insulating material layer 108 is formed, and then the side coated with the conductive adhesive layer 109 is adhered to the metal back plate 106, so that the gallium nitride chip 103 is fixed to the metal back plate 106. Of course, the conductive adhesive layer 109 may be coated on the metal back plate 106, and then the surface of the gallium nitride chip 103 on which the insulating material layer or the semi-insulating material layer 108 is formed may be attached to the surface of the metal back plate 106 on which the conductive adhesive layer 109 is formed, so that the gallium nitride chip 103 is fixed on the metal back plate 106, which is not limited in the present invention.
In this embodiment, the gallium nitride chip 103 and the metal back plate 106 are adhered by the conductive layer adhesive 101, and the conductive adhesive layer 109 has conductivity, and may be thicker or thinner, so that the uniformity requirement is not high, and the current is not affected. The uniformity and thickness of the insulating material or semi-insulating material layer 108 formed on the back surface of the gallium nitride wafer 10 by adopting the film plating process are easier to control, the uniformity of the insulating material or semi-insulating material layer 108 is improved, electric leakage can be prevented, and the combination of the insulating material or semi-insulating material layer 108 and the conductive adhesive layer 109 enables the gallium nitride power device to control current better, and the performance of the gallium nitride power device is improved.
Correspondingly, the invention also provides a gallium nitride power device packaging structure, referring to fig. 4, the gallium nitride power device packaging structure comprises:
a metal backplate 106;
a conductive glue layer 109 on the metal back plate 106;
the back surface of the gallium nitride chip 103 is adhered to the metal back plate 106 through the conductive adhesive layer 109; the method comprises the steps of,
a layer of insulating material or semi-insulating material 108 between the gallium nitride die 103 and the conductive glue layer 109.
The gallium nitride chip 103 is provided with a chip gate G, a chip source S and a chip drain D. The package structure further comprises a package frame (not shown), the chip drain electrode D is connected to the drain metal lead 102a of the package frame through a first bonding lead 105a, the chip gate electrode G is connected to the gate metal lead 102b of the package frame through a second bonding lead 105b, and the chip source electrode S is connected to the metal back plate 106 through a third bonding lead 105 c.
The package structure further includes a back metal lead 107, the back metal lead 107 being connected to the metal back 106. The package structure further includes a housing 104, and the housing 104 seals the gallium nitride chip 103 and the metal back plate 106.
In this embodiment, the thickness of the insulating material or semi-insulating material layer 108 is greater than or equal to 10nm and less than or equal to 1000nm, for example, the thickness of the insulating material or semi-insulating material layer 108 is 10nm, 50nm, 100nm, 200nm, 400nm, 800nm or 1000nm, but not limited thereto. The thickness of the insulating material or the semi-insulating material layer 108 may be the same as or different from the thickness of the insulating material or the semi-insulating material layer 108, and may be selected according to actual requirements.
In summary, in the processing method and the packaging structure before packaging the gallium nitride power device provided by the invention, before packaging the gallium nitride power device, firstly, a gallium nitride wafer to be packaged is provided, then, a coating process is adopted to form an insulating material or semi-insulating material layer on the back surface of the gallium nitride wafer, then, the gallium nitride wafer is cut to form a plurality of gallium nitride chips, and then, one surface, on which the insulating material or semi-insulating material layer is formed, of the gallium nitride chips is attached to a metal backboard through conductive adhesive. According to the invention, the insulating material or semi-insulating material layer is formed on the back surface of the gallium nitride wafer by adopting a coating process, the uniformity and thickness of the insulating material or semi-insulating material layer are easier to control, the uniformity of the insulating material or semi-insulating material layer is improved, electric leakage can be prevented, the gallium nitride chip formed with the insulating material or semi-insulating material layer is adhered to the metal backboard through the conductive adhesive layer, the conductive adhesive layer can conduct electricity, no influence is caused on current, and the combination of the insulating material or semi-insulating material layer and the conductive adhesive layer enables the gallium nitride power device to control current better, and the performance of the gallium nitride power device is improved.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.
Claims (10)
1. The processing method before packaging the gallium nitride power device is characterized by comprising the following steps of:
providing a gallium nitride wafer to be packaged;
forming an insulating material or semi-insulating material layer on the back surface of the gallium nitride wafer by adopting a coating process;
cutting the gallium nitride wafer to form a plurality of gallium nitride chips; the method comprises the steps of,
and adhering one surface of the gallium nitride chip, on which the insulating material or semi-insulating material layer is formed, to a metal backboard through a conductive adhesive layer.
2. The method of claim 1, further comprising, before forming the insulating or semi-insulating layer on the back side of the gallium nitride wafer: and thinning the back surface of the gallium nitride wafer.
3. The method of claim 1, wherein the thickness of the insulating material or semi-insulating material layer is 10nm or more and 1000nm or less.
4. The method of claim 1, wherein the coating method comprises thermal evaporation, atomic layer deposition, chemical vapor deposition, or physical vapor deposition.
5. A gallium nitride power device package structure, comprising:
a metal backplate;
a conductive adhesive layer positioned on the metal backboard;
the back surface of the gallium nitride chip is adhered to the metal backboard through the conductive adhesive layer; the method comprises the steps of,
and an insulating material or semi-insulating material layer positioned between the gallium nitride chip and the conductive adhesive layer.
6. The gallium nitride power device package structure of claim 5, wherein the gallium nitride chip is provided with a chip gate, a chip source and a chip drain.
7. The gallium nitride power device package structure of claim 6, further comprising a package frame, wherein the die drain is connected to a drain metal lead of the package frame by a first bonding wire, the die gate is connected to a gate metal lead of the package frame by a second bonding wire, and the die source is connected to the metal backplate by a third bonding wire.
8. The gallium nitride power device package structure of claim 7, further comprising a housing sealing the gallium nitride chip and the metal backplate.
9. The gallium nitride power device package structure of claim 5, wherein the thickness of the insulating material or semi-insulating material layer is 10nm or more and 1000nm or less.
10. The gallium nitride power device package structure of claim 5, further comprising a backplate metal lead connected to the metal backplate.
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