CN116646245A - Temperature compensation method of semiconductor structure and semiconductor device - Google Patents

Temperature compensation method of semiconductor structure and semiconductor device Download PDF

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Publication number
CN116646245A
CN116646245A CN202210143062.2A CN202210143062A CN116646245A CN 116646245 A CN116646245 A CN 116646245A CN 202210143062 A CN202210143062 A CN 202210143062A CN 116646245 A CN116646245 A CN 116646245A
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temperature
semiconductor structure
edge
temperature compensation
heating
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Chinese (zh)
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左敏
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The disclosure provides a temperature compensation method of a semiconductor structure and semiconductor equipment, and relates to the technical field of semiconductors. The temperature compensation method of the semiconductor structure is applied to a heat treatment process of the semiconductor structure, wherein the temperature compensation method comprises the following steps: detecting a back film parameter of the semiconductor structure; acquiring a first temperature value of a central region of the semiconductor structure; acquiring a second temperature value of an edge region of the semiconductor structure; obtaining a temperature compensation value according to the first temperature value, the second temperature value and the back film parameter; based on the temperature compensation value, the edge region is heated to perform temperature compensation. By using the temperature compensation method defined in the disclosure, the temperature uniformity of the edge area and the central area of the semiconductor structure is ensured, and the electrical property and the yield of the semiconductor structure are improved.

Description

Temperature compensation method of semiconductor structure and semiconductor device
Technical Field
The disclosure relates to the field of semiconductor technology, and in particular, to a temperature compensation method of a semiconductor structure and a semiconductor device.
Background
In the semiconductor process, the rapid thermal processing process can rapidly and uniformly heat the semiconductor structure (such as a wafer, etc.), and has wide application, for example, can be applied to repair and activation of lattice damage after ion implantation; as another example, the method can be applied to dopant activation and diffusion processes; as another example, a tempering process after forming the metal silicide may be applied; for example, the annealing treatment may be applied to the gate oxide layer.
At present, in the rapid thermal processing process, the temperature uniformity at different positions of the semiconductor structure is poor, and the electrical property and the yield of the semiconductor structure are reduced.
Disclosure of Invention
The following is a summary of the subject matter of the detailed description of the present disclosure. This summary is not intended to limit the scope of the claims.
The disclosure provides a temperature compensation method of a semiconductor structure and the semiconductor structure.
A first aspect of an embodiment of the present disclosure provides a temperature compensation method for a semiconductor structure, which is applied to a heat treatment process of the semiconductor structure, and the temperature compensation method includes:
detecting a back film parameter of the semiconductor structure;
acquiring a first temperature value of a central region of the semiconductor structure;
acquiring a second temperature value of an edge region of the semiconductor structure;
obtaining a temperature compensation value according to the first temperature value, the second temperature value and the back film parameter;
and heating the edge area based on the temperature compensation value to perform temperature compensation.
According to some embodiments of the present disclosure, obtaining a temperature compensation value from the first temperature value, the second temperature value, and the backside film parameter includes:
acquiring a temperature model, wherein the temperature model is at least used for representing the preset temperature of the heat treatment process and the corresponding relation between the back film parameters of the semiconductor structure and the actual temperature of the semiconductor structure;
acquiring a preset temperature of the heat treatment process;
and based on the temperature model, obtaining the temperature compensation value according to the preset temperature, the back film parameter, the first temperature value and the second temperature value.
According to some embodiments of the disclosure, the heating the edge region based on the temperature compensation value includes:
heating a structure connected with the edge area based on the temperature compensation value, and further heating the edge area;
and/or the number of the groups of groups,
and directly heating the edge area based on the temperature compensation value.
According to some embodiments of the disclosure, the heating the structure connected to the edge region based on the temperature compensation value, further heating the edge region, comprises:
and determining an input voltage of an auxiliary heat source for heating the edge region of the semiconductor structure based on the temperature compensation value so as to heat the edge region.
According to some embodiments of the disclosure, the method further comprises:
selecting back film parameters of various types of back films, wherein the back film parameters comprise back film thickness;
acquiring the center actual temperature and the edge actual temperature of each type of the back film under the process conditions including the preset temperature;
and establishing a temperature model based on the back film parameters, the preset temperature, the center actual temperature and the edge actual temperature.
A second aspect of the disclosed embodiments provides a semiconductor device, comprising:
a heat source for heating the semiconductor structure;
an edge ring for carrying a semiconductor structure, an edge region of the semiconductor structure being in contact with the edge ring;
an auxiliary heat source for performing temperature compensation on the edge region;
and the controller is electrically connected with the auxiliary heat source and is used for realizing the temperature compensation method of the semiconductor structure.
According to some embodiments of the disclosure, the auxiliary heat source is disposed within the edge ring, the auxiliary heat source for heating the edge ring; and/or the number of the groups of groups,
the auxiliary heat source is arranged at a position corresponding to the edge region of the semiconductor structure and is used for heating the edge region of the semiconductor structure.
According to some embodiments of the disclosure, the auxiliary heat source includes a heating coil disposed at a position where the edge ring contacts an edge region of the semiconductor structure.
According to some embodiments of the disclosure, the auxiliary heat source comprises a laser heating source disposed at a bottom of the edge ring for heating the edge ring.
According to some embodiments of the disclosure, the heat source includes a plurality of radiation irradiators, and the plurality of radiation irradiators are arranged in a circumferential array.
According to some embodiments of the disclosure, the method further comprises detecting means for detecting a temperature value of the edge region.
According to some embodiments of the disclosure, the detection device comprises a thermocouple.
According to some embodiments of the present disclosure, the semiconductor apparatus further includes a rotation stage, the edge ring is disposed on the rotation stage, and the edge ring rotates with the rotation stage.
According to some embodiments of the present disclosure, a reflective cap is further included, the reflective cap being located below the semiconductor structure and disposed opposite a central region of the semiconductor structure.
According to some embodiments of the disclosure, the reflective device further comprises a reflective plate disposed below the reflective cover, wherein the reflective cover and the reflective plate are capable of relative movement.
According to some embodiments of the present disclosure, further comprising a fixed seat and a pushing assembly;
the reflecting plate is fixed on the fixing seat;
one end of the pushing component is fixed on the fixed seat, and the other end of the pushing component penetrates through the reflecting plate and then is connected with the reflecting cover, so that the distance between the reflecting plate and the reflecting cover is adjusted.
According to some embodiments of the present disclosure, the pushing component includes a pushing seat and at least one thimble disposed on the pushing seat, and one end of the thimble penetrates out from the top surface of the pushing seat and is connected with the reflecting cover.
According to some embodiments of the disclosure, at least one probe is disposed at a bottom end of the fixing base, and the probe sequentially passes through the fixing base and the reflecting plate.
In the temperature compensation method of the semiconductor structure and the semiconductor device, firstly, the back film parameter of the semiconductor structure to be heat treated is detected, and a first temperature value of the central area of the semiconductor structure and a second temperature value of the edge area of the semiconductor structure are obtained; then determining a temperature compensation value according to the back film parameter, the first temperature value and the second temperature value; and then, according to the temperature compensation value, performing temperature compensation on the edge region of the semiconductor structure, so that the temperature between the edge region and the central region of the semiconductor structure is kept uniform, and the electrical property and the yield of the semiconductor structure are improved.
Other aspects will become apparent upon reading and understanding the accompanying drawings and detailed description.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description, serve to explain the principles of the embodiments of the disclosure. In the drawings, like reference numerals are used to identify like elements. The drawings, which are included in the description, are some, but not all embodiments of the disclosure. Other figures can be derived from these figures by one of ordinary skill in the art without undue effort.
Fig. 1 is a flow chart illustrating a method of temperature compensation of a semiconductor structure according to an exemplary embodiment.
Fig. 2 is a schematic diagram of a semiconductor device shown according to an example embodiment.
Fig. 3 is a partial schematic diagram of a semiconductor device shown according to an exemplary embodiment.
Reference numerals:
10. a heat source; 20. An edge ring;
30. an auxiliary heat source; 40. A controller;
50. a detection device; 60. A rotary table;
70. a reflection cover; 80. A reflection plate;
90. a fixing seat; 91. a probe;
100. a semiconductor structure; 101. A radiation irradiator;
110. a pushing assembly; 111. A pushing seat;
112. a thimble; 1001. a back film.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions in the disclosed embodiments will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present disclosure, and it is apparent that the described embodiments are some embodiments of the present disclosure, but not all embodiments. Based on the embodiments in this disclosure, all other embodiments that a person skilled in the art would obtain without making any inventive effort are within the scope of protection of this disclosure. It should be noted that, without conflict, the embodiments of the present disclosure and features of the embodiments may be arbitrarily combined with each other.
In the semiconductor process, the rapid thermal processing process can rapidly and uniformly heat the semiconductor structure (such as a wafer, etc.), and has wide application, for example, can be applied to repair and activation of lattice damage after ion implantation; as another example, the method can be applied to dopant activation and diffusion processes; as another example, a tempering process after forming the metal silicide may be applied; for example, the annealing treatment may be applied to the gate oxide layer.
At present, in the rapid thermal processing process, for example, when the ultra-shallow junction process is adopted and the instantaneous annealing process is required to be performed on the semiconductor structure, the temperature in the process is difficult to control due to the short heating time. Meanwhile, in the existing heat treatment equipment, the semiconductor structure is directly contacted with the edge ring, and the semiconductor structure rotates along with the edge ring during the heating process. Because the distance from the semiconductor structure to the heat source is different from the distance from the edge ring to the heat source, the central area of the semiconductor structure is heated more, and the bottom layer of the edge area of the semiconductor structure is heated less, so that a temperature difference is formed between the central area and the edge area of the semiconductor structure, the temperature uniformity of the whole semiconductor structure is poor, and the electrical property and the yield of the semiconductor structure are reduced.
To solve one of the above-mentioned technical problems, an exemplary embodiment of the present disclosure provides a temperature compensation method of a semiconductor structure, which is described below with reference to fig. 1.
The semiconductor structure of the present embodiment is not limited to a wafer, a dynamic random access memory (Dynamic random access memory, abbreviated as DRAM) and the like, and the semiconductor structure will be described below by taking the semiconductor structure as an example, but the present embodiment is not limited thereto, and the semiconductor structure of the present embodiment may be other structures.
As shown in fig. 1, an exemplary embodiment of the present disclosure provides a temperature compensation method for a semiconductor structure, which is applied to a heat treatment process of the semiconductor structure. The temperature compensation method comprises the following steps:
step S100: and detecting the parameters of the back film of the semiconductor structure.
Step S200: a first temperature value of a central region of the semiconductor structure is acquired.
Step S300: a second temperature value of an edge region of the semiconductor structure is obtained.
Step S400: and obtaining a temperature compensation value according to the first temperature value, the second temperature value and the back film parameter.
Step S500: based on the temperature compensation value, the edge region is heated to perform temperature compensation.
In this embodiment, the temperature compensation value is determined by respectively obtaining the back film parameter of the semiconductor structure, the first temperature value of the central region of the semiconductor structure, and the second temperature value of the edge region of the semiconductor structure, and according to the back film parameter, the first temperature value, and the second temperature value, and then according to the temperature compensation value, the temperature compensation is performed on the edge region of the semiconductor structure, so that the temperature of the edge region of the semiconductor structure and the temperature of the central region of the semiconductor structure are kept uniform, and the electrical property and yield of the semiconductor structure are improved.
In some embodiments, in implementing step S400, the following method may be employed:
and acquiring a temperature model which is at least used for representing the preset temperature of the heat treatment process of the semiconductor structure and the corresponding relation between the back film parameters of the semiconductor structure and the actual temperature of the semiconductor structure.
The temperature model needs to be established in advance, and the established temperature model can be stored in equipment for realizing the temperature compensation method of the semiconductor structure, and can be directly called from a storage unit of the equipment when the model needs to be used. The temperature model can also be stored in an external storage device, and is acquired from the external storage device when the temperature model is required to be used. By setting the temperature model, the problem that the temperature of the central area of the semiconductor structure is not easy to measure is solved, and the time cost and the consumable cost for directly measuring the temperature of the central area of the semiconductor structure are reduced.
The temperature model relates to three parameters, namely a preset temperature, a back film parameter and an actual temperature of the semiconductor structure, and is used for representing the corresponding relation between the preset temperature and the actual temperature of the back film parameter and the actual temperature of the semiconductor structure. The back surface film parameters are, for example, the material, thickness, etc. of the semiconductor structure. The preset temperature refers to a specific temperature to be reached by the semiconductor structure in the heat treatment process, and the actual temperature of the semiconductor structure refers to a specific temperature to be reached after being heated by a heat source.
In the heat treatment process of the semiconductor structure, the temperature of the semiconductor structure is affected by the output voltage of the heat source, and the output voltage of the heat source is related to the back surface film parameter of the semiconductor structure (such as the back surface emissivity of the wafer).
Therefore, in order to achieve temperature compensation of the semiconductor structure, to maintain uniformity of temperature in the central region of the semiconductor structure and in the edge region of the semiconductor structure, it is necessary to obtain a relationship curve of back surface film parameters of different types, sizes, and types of semiconductor structures and emissivity thereof in the process of establishing a temperature model, and establish the temperature model based on the relationship curve.
In some embodiments, the temperature model may be established by the following method:
firstly, back film parameters of multiple types of back films are selected, wherein the back film parameters comprise thicknesses and materials of the back films, and the back film thicknesses of wafers with different specifications or materials have different thickness values. And in the initial stage of establishing a temperature model, collecting related parameters of the emissivity and the material of the back films with different materials, collecting related parameters of the emissivity and the thickness of the back films with different thicknesses, and determining a relation curve of the emissivity and the material and a relation curve of the emissivity and the thickness through data fitting.
The center actual temperature and the edge actual temperature of each type of the back surface film under the process conditions including the preset temperature are obtained.
And establishing a temperature model based on the back film parameters, the preset temperature, the center actual temperature and the edge actual temperature.
In the present embodiment, a temperature model may be determined, the temperature model T1: t (T) In (a) ＝Ts+aΦ 2 +bΦ+c, temperature model T2: Δt=t In (a) -T Edge(s) ＝Ts+aΦ 2 +bΦ+c-T Edge(s) Wherein, ts is a preset temperature, T In (a) Is the center actual temperature, T, of the center region of the semiconductor structure in the semiconductor structure heat treatment process Edge(s) The actual edge temperature of the edge region of the semiconductor structure in the semiconductor structure heat treatment process can be measured by a probe or a thermocouple, deltaT is the difference between the actual center temperature of the center region of the semiconductor structure and the actual edge temperature of the edge region in the semiconductor structure heat treatment process, i.e. the temperature compensation value, phi and X are the back film parameters of the semiconductor structure, such as the back film thickness of the waferDegree, resistance or emissivity, a, b, c are coefficients of data fitting. The coefficients a, b and c are obtained by taking known back film parameters, preset temperature, center actual temperature and edge actual temperature as samples and performing data fitting on a temperature model.
After the temperature model is established, acquiring a preset temperature Ts in the heat treatment process of the semiconductor structure according to the temperature model, wherein the preset temperature Ts is set in a process menu and can be determined according to the effect to be achieved by different heat treatment processes. The preset temperature Ts is at least used for representing a heating temperature value or a heating temperature range required to be reached by different regions of the semiconductor structure, for example, the preset temperature Ts may be a preset temperature of a central region of the semiconductor structure, or may be a preset temperature of an edge region or a preset temperature at a junction position between the central region and the edge region. It should be noted that the preset temperature may be a specific temperature value, or may be a specific temperature range to be reached by the semiconductor structure.
Then, according to the obtained known preset temperature Ts, the back surface film parameter of the semiconductor structure and the second temperature value T Edge(s) And coefficients a, b, c of the known data fitting, a temperature compensation value Δt is obtained based on the temperature model T2 (Δt=t In (a) -T Edge(s) ＝Ts+aΦ 2 +bΦ+c-T Edge(s) )。
In the actual heat treatment process of the semiconductor structure, before the semiconductor structure enters the process chamber to be subjected to heat treatment, the semiconductor structure heat treatment equipment obtains information such as the material and the thickness of a back film of the semiconductor structure, wherein the information can be obtained through measurement or can be stored in the semiconductor structure heat treatment equipment in advance, the temperature compensation formula is called by a control system of the semiconductor structure heat treatment equipment based on the information such as the material and the thickness, and then after the temperature compensation value of an edge area is determined, the edge area of the semiconductor structure is heated according to the temperature compensation value, so that the temperature of the edge area and the temperature of a central area are kept uniform, and the performance and the yield of the semiconductor structure are improved.
As shown in fig. 2, in some embodiments, after the temperature compensation value Δt is obtained, in the process of heating the edge region, a structure (such as an edge ring) connected to the edge region may be directly heated, so as to achieve an effect of heating the edge region of the semiconductor structure 100, so as to perform temperature compensation; or, the edge area can be directly heated based on the temperature compensation value, so that the difficulty in modifying the semiconductor structure heat treatment equipment is reduced while the uniformity of the temperature of the edge area and the temperature of the central area of the semiconductor structure is ensured.
As shown in fig. 2 and 3, in some embodiments, the structure connected to the edge region is heated based on the temperature compensation value Δt, and thus the heating effect of the edge region of the semiconductor structure 100 can be adjusted by adjusting the electrical parameter of the auxiliary heat source 30 during the heating of the edge region, and the temperature compensation range is between 0 ℃ and 1300 ℃. The auxiliary heat source 30 may be, for example, a heating coil or a laser heating source, and the heating temperature of the border region may be adjusted by adjusting the input voltage of the heating coil and changing the heating power of the heating coil. For the laser heating source, the heating temperature and the heating region can be adjusted by adjusting the irradiation time period of the laser beam of the laser heating source.
In this embodiment, the edge region of the semiconductor structure is heated by using the auxiliary heat source, and by controlling the input voltage of the auxiliary heat source, the edge region is heated accurately, so that the accuracy of temperature control in the process of heating the edge region is improved, and then the temperature between the central region and the edge region of the semiconductor structure is kept uniform, and the electrical property and the yield of the semiconductor structure are improved.
As shown in fig. 2 and 3, an exemplary embodiment of the present disclosure provides a semiconductor apparatus, wherein the semiconductor apparatus includes a heat source 10, an edge ring 20, an auxiliary heat source 30, and a controller 40.
Wherein the heat source 10 is arranged directly above the semiconductor structure 100, the heat source 10 is used for heating the semiconductor structure 100, and the heat source 10 comprises a radiation irradiator 101. The number of the radiation irradiators 101 is plural, and the plurality of radiation irradiators 101 are arranged in a circumferential array, and the radiation irradiators are directly arranged on the irradiation surface of the semiconductor structure 100, so that in the rotation process of the edge ring 20, the consistency of the heating effect of the central area and the edge area of the irradiation surface of the semiconductor structure 100 (i.e. the top surface of the semiconductor structure) is ensured, and the electrical property and the yield of the semiconductor structure are effectively ensured.
An edge ring 20 is disposed below the heat source 10 for carrying the semiconductor structure 100, and an edge region of the semiconductor structure 100 is in contact with the edge ring 20.
The semiconductor structure 100 is placed on a structure of a semiconductor device, such as the semiconductor structure 100 is placed on the edge ring 20, and the edge ring 20 is in direct contact with the edge of the backside film 1001 of the semiconductor structure 100. Since the distance of the semiconductor structure 100 from the heat source 10 is different from the distance of the edge ring 20 from the heat source 10, when the heat source 10 heats the semiconductor structure 100, the central region of the semiconductor structure 100 is heated more and the bottom layer of the edge region of the semiconductor structure is heated less, thereby forming a temperature difference between the central region and the edge region of the semiconductor structure 100, i.e., the temperature of the edge region is less than the temperature of the central region.
In order to solve the problem of the temperature difference between the center region and the edge region of the semiconductor structure, in the semiconductor device of the present embodiment, an auxiliary heat source 30 is further provided. Wherein an auxiliary heat source 30 may be disposed on the top surface of the edge ring 20 to directly heat the back film of the semiconductor structure 100. Alternatively, the auxiliary heat source 30 is disposed in the edge ring 20, heats the top surface of the edge ring 20 and the back surface film 1001 contacting the edge ring 20, compensates the temperature of the edge region of the semiconductor structure 100, so that the temperature of the edge region and the temperature of the center region of the semiconductor structure 100 are maintained to be uniform, and the electrical property and yield of the semiconductor structure 100 are improved.
As shown in fig. 2 and 3, in one example, an auxiliary heat source 30 is disposed within the edge ring 20, the auxiliary heat source 30 being used to heat the edge ring 20. In the heat treatment process of the semiconductor structure 100, the temperature of the edge region of the semiconductor structure 100 in contact with the edge ring 20 is increased by providing the temperature of the edge ring 20, so as to achieve the effect of temperature compensation of the edge region of the semiconductor structure 100.
In another example, an auxiliary heat source 30 may be disposed on the edge ring 20 at a position corresponding to an edge region of the semiconductor structure 100, the auxiliary heat source 30 being used to directly heat the edge region of the semiconductor structure 100, thereby temperature compensating the edge region of the semiconductor structure 100.
The temperature compensation is directly or indirectly carried out on the edge area of the semiconductor structure through the auxiliary heat source, so that the temperature of the edge area is consistent with the temperature of the central area, and the electrical property and the yield of the semiconductor structure are improved. Meanwhile, the auxiliary heat source 30 is arranged in the edge ring 20 or embedded in the top surface of the edge ring 20, so that the temperature compensation of the edge area of the semiconductor structure 100 is realized and the equipment transformation difficulty is reduced under the condition that the normal operation of the edge ring 20 is not influenced.
In order to achieve an automatic control of the temperature compensation of the edge region of the semiconductor structure 100, a controller 40 is also provided in the semiconductor device. The controller 40 is electrically connected to the auxiliary heat source 30, and the controller 40 controls the auxiliary heat source 30 to directly heat the semiconductor structure 100 or to heat the semiconductor structure 100 through the edge ring 20 by operating the temperature compensation method described in the above method embodiment, so as to realize automatic control of the temperature compensation process, maintain uniformity of temperature of the edge region and temperature of the central region of the semiconductor structure, and improve reliability of the control process.
As shown in fig. 2 and 3, in some embodiments, the auxiliary heat source 30 includes a heating coil disposed at a location where the edge ring 20 contacts the edge region of the semiconductor structure 100. Wherein the heating coil may be a copper coil, and the edge region of the edge ring 20 and the semiconductor structure 100 is heated by externally applying a predetermined voltage to thereby temperature-compensate the edge region.
In the embodiment, the edge ring and the edge region of the semiconductor structure are heated by using the input voltage control heating coil with a preset range, so that the control and the operation are convenient, the heating efficiency is high, the temperature of the edge region can be rapidly and accurately compensated, and the uniformity of the temperature of the central region and the edge region of the semiconductor structure is ensured.
In some embodiments, the auxiliary heat source 30 may also be a heating rod or an electric heating sheet, etc., and the heating rod heats by externally applying a predetermined voltage, thereby heating the edge ring 20 and the edge region of the semiconductor structure 100, thereby ensuring temperature uniformity between the edge region and the central region of the semiconductor structure 100.
As shown in fig. 2 and 3, in some embodiments, the auxiliary heat source 30 may also include a laser heating source. The laser heating source is disposed at the bottom of the edge ring 20, and is used for heating the edge ring 20, and performing temperature compensation on the edge region of the semiconductor structure 100 by using heat conduction.
The laser heating source can rapidly complete the heating treatment of the edge ring, so that the temperature compensation can be rapidly and accurately carried out on the edge area, and the operation is convenient and the control is convenient.
As shown in fig. 3, in some embodiments, the semiconductor device further includes a detecting device 50, where the detecting device 50 may be disposed at a side of the edge ring 20, and the detecting device 50 is configured to rapidly detect a second temperature value of an edge region of the semiconductor structure 100, a first temperature value T of a central region of the semiconductor structure 100 In (a) Can be obtained from a storage device. According to the first temperature value T In (a) Second temperature value T Edge(s) And a temperature compensation formula, determining a temperature compensation value deltat of the edge region, thereby controlling the auxiliary heat source 30 to perform temperature compensation of the edge region through the controller 40, and reducing the detection cost of the semiconductor device.
As shown in fig. 3, in some embodiments, the detection device 50 may include, but is not limited to, a thermocouple. The thermocouple has the advantages of high measurement accuracy and quick thermal response time, and the thermocouple can also measure the temperature of the edge ring 20, the edge area and other positions in a direct contact mode, so that the thermocouple is convenient to use. In this embodiment, a thermocouple with a measurement range of 0-1500 ℃ can be adopted, and through a direct-reading temperature measurement process, temperature measurement can be performed on the edge ring 20 or the edge region rapidly, meanwhile, the temperature rising process of the edge ring 20 or the edge region can be precisely controlled, so that the operation and the use are convenient, and the detection efficiency and the detection precision are effectively improved. The detecting device 50 in the semiconductor apparatus may be provided on a side wall of the turntable 60 (described in detail later), and a detecting end of the detecting device 50 directly abuts against a bottom surface of the edge ring 20 or a bottom surface of an edge region, thereby completing measurement of the temperature of the edge ring 20 or the edge region.
As shown in fig. 2 and 3, in some embodiments, the semiconductor apparatus further includes a rotation stage 60. The edge ring 20 is disposed on the rotary table 60, and the edge ring 20 rotates along with the rotary table 60, so that the temperature rising effect of the central area and the edge area of the top surface of the semiconductor structure 100 carried on the edge ring 20 is kept uniform under the irradiation of the heat source 10, thereby ensuring the electricity and yield of the semiconductor structure.
As shown in fig. 2, in some embodiments, the semiconductor device further includes a reflective cover 70. The reflector 70 is located below the semiconductor structure 100 and is disposed below the edge ring 20. The reflective surface of the reflective cover 70 is disposed opposite to the central region of the bottom surface of the semiconductor structure 100, that is, the reflective surface of the reflective cover 70 is disposed opposite to the central region of the back film 1001 of the semiconductor structure 100, and the diameter of the reflective cover 70 is larger than or equal to the diameter of the semiconductor structure 100, so that part of the heat energy in the heat source 10 is collected to the back film 1001 of the semiconductor structure 100 through the reflection of the reflective cover 70, and the utilization rate and the heating efficiency of the heat source 10 are improved.
As shown in fig. 2, in some embodiments, the semiconductor device further includes a reflective plate 80. The reflecting plate 80 is disposed below the reflecting cover 70, and the reflecting plate 80 is used for reflecting part of the heat energy of the heat source 10 into the reflecting cover 70 through reflection, and then converging the part of the heat energy onto the back film 1001 of the semiconductor structure 100 through the reflecting cover 70, so as to improve the utilization rate and heating efficiency of the heat source 10. The reflecting plate 80 and the reflecting cover 70 can move relatively, so that the distance between the reflecting plate 80 and the reflecting cover 70 can be adjusted according to the different materials or thicknesses of the semiconductor structure 100, and the utilization rate and the heating efficiency of the heat source 10 are effectively ensured.
As shown in fig. 2, in some embodiments, the semiconductor device further includes a holder 90 and a pusher assembly 110. Wherein, the reflecting plate 80 is fixed on the fixing base 90. One end of the pushing component 110 is fixed on the fixed seat 90, the other end of the pushing component 110 penetrates through the reflecting plate 80 and then is connected with the reflecting cover 70, and the pushing component 110 is used for adjusting the distance between the reflecting plate 80 and the reflecting cover 70, so that the utilization rate and the heating efficiency of the heat source 10 are improved.
As shown in FIG. 2, in some embodiments, the ejector assembly 110 includes an ejector seat 111 and an ejector pin 112. Wherein, the number of the ejector pins 112 is at least one, the ejector pins 112 are arranged on the pushing seat 111, and one end of the ejector pins 112 is penetrated out from the top surface of the pushing seat 111 and is connected with the reflecting cover 70, the pushing assembly 110 has a simple structure, is convenient to operate, and can effectively improve the utilization rate and the heating efficiency of the heat source 10.
The temperature of the central region of the semiconductor structure may be obtained by direct detection, in addition to reading information previously stored in the semiconductor heat treatment apparatus. In some embodiments, as shown in fig. 2, at least one probe 91 is disposed at the bottom end of the holder 90, wherein one end of each probe 91 may sequentially pass through the top end of the holder 90, the reflective plate 80 and the reflective cover 70, and the top end of each probe 91 may directly abut against the central region of the back surface film 1001 of the semiconductor structure 100, and the probe 91 is used to measure the temperature of the central region of the back surface film 1001 of the semiconductor structure 100.
In the case where the probe 91 is provided, a first temperature value of a central region of the semiconductor structure is detected by the probe 91, and a second temperature value T of an edge region of the semiconductor structure is detected by the thermocouple Edge(s) Then according to the first temperature value T In (a) And a temperature compensation formula, to rapidly obtain a temperature compensation value of the edge region of the semiconductor structure 100. And the controller 40 controls the auxiliary heat source 30 to perform temperature compensation on the edge region of the semiconductor structure 100, so that the temperature between the central region and the edge region of the semiconductor structure 100 is kept uniform, and the electrical property and the yield of the semiconductor structure are improved.
In this specification, each embodiment or implementation is described in a progressive manner, and each embodiment focuses on a difference from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
In the description of the present specification, descriptions of the terms "example," "exemplary embodiment," "some embodiments," "illustrative embodiments," "examples," and the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure.
In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description of the present disclosure, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present disclosure.
It will be understood that the terms "first," "second," and the like, as used in this disclosure, may be used to describe various structures, but these structures are not limited by these terms. These terms are only used to distinguish one structure from another structure.
In one or more of the drawings, like elements are referred to by like reference numerals. For clarity, the various parts in the drawings are not drawn to scale. Furthermore, some well-known portions may not be shown. The structure obtained after several steps may be depicted in one figure for simplicity. Numerous specific details of the present disclosure, such as device structures, materials, dimensions, processing techniques and technologies, are set forth in the following description in order to provide a more thorough understanding of the present disclosure. However, as will be understood by those skilled in the art, the present disclosure may be practiced without these specific details.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present disclosure, and not for limiting the same; although the present disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.

Claims (18)

1. The temperature compensation method for the semiconductor structure is applied to a heat treatment process of the semiconductor structure, and is characterized by comprising the following steps:
detecting a back film parameter of the semiconductor structure;
acquiring a first temperature value of a central region of the semiconductor structure;
acquiring a second temperature value of an edge region of the semiconductor structure;
obtaining a temperature compensation value according to the first temperature value, the second temperature value and the back film parameter;
and heating the edge area based on the temperature compensation value to perform temperature compensation.
2. The method of claim 1, wherein the obtaining a temperature compensation value based on the first temperature value, the second temperature value, and the backside film parameter comprises:
acquiring a temperature model, wherein the temperature model is at least used for representing the preset temperature of the heat treatment process and the corresponding relation between the back film parameters of the semiconductor structure and the actual temperature of the semiconductor structure;
acquiring a preset temperature of the heat treatment process;
and based on the temperature model, obtaining the temperature compensation value according to the preset temperature, the back film parameter, the first temperature value and the second temperature value.
3. The method of claim 2, wherein heating the edge region based on the temperature compensation value comprises:
heating a structure connected with the edge area based on the temperature compensation value, and further heating the edge area;
and/or the number of the groups of groups,
and directly heating the edge area based on the temperature compensation value.
4. A method of temperature compensation of a semiconductor structure according to claim 3 wherein said heating the structure connected to said edge region based on said temperature compensation value, thereby heating said edge region, comprises:
and determining an input voltage of an auxiliary heat source for heating the edge region of the semiconductor structure based on the temperature compensation value so as to heat the edge region.
5. The method of temperature compensation of a semiconductor structure of claim 2, further comprising:
selecting back film parameters of various types of back films, wherein the back film parameters comprise back film thickness;
acquiring the center actual temperature and the edge actual temperature of each type of the back film under the process conditions including the preset temperature;
and establishing a temperature model based on the back film parameters, the preset temperature, the center actual temperature and the edge actual temperature.
6. A semiconductor device, characterized by comprising:
a heat source for heating the semiconductor structure;
an edge ring for carrying a semiconductor structure, an edge region of the semiconductor structure being in contact with the edge ring;
an auxiliary heat source for performing temperature compensation on the edge region;
a controller electrically connected to the auxiliary heat source, the controller for implementing a temperature compensation method of the semiconductor structure of any one of claims 1-5.
7. The semiconductor device according to claim 6, wherein the auxiliary heat source is provided in the edge ring, the auxiliary heat source being for heating the edge ring; and/or the number of the groups of groups,
the auxiliary heat source is arranged at a position corresponding to the edge region of the semiconductor structure and is used for heating the edge region of the semiconductor structure.
8. The semiconductor device of claim 7, wherein the auxiliary heat source comprises a heating coil disposed at a location where the edge ring contacts an edge region of the semiconductor structure.
9. The semiconductor device of claim 7, wherein the auxiliary heat source comprises a laser heating source disposed at a bottom of the edge ring for heating the edge ring.
10. The semiconductor device according to claim 6, wherein the heat source includes a plurality of radiation irradiators, and wherein the plurality of radiation irradiators are arranged in a circumferential array.
11. The semiconductor device according to claim 6, further comprising detection means for detecting a temperature value of the edge region.
12. The semiconductor device according to claim 11, wherein the detection means comprises a thermocouple.
13. The semiconductor apparatus of claim 6, further comprising a rotation table, wherein the edge ring is disposed on the rotation table, and wherein the edge ring rotates with the rotation table.
14. The semiconductor device of claim 13, further comprising a reflective cap positioned below the semiconductor structure and disposed opposite a central region of the semiconductor structure.
15. The semiconductor device according to claim 14, further comprising a reflecting plate provided below the reflecting cover, the reflecting cover and the reflecting plate being relatively movable therebetween.
16. The semiconductor device of claim 15, further comprising a holder and a pusher assembly;
the reflecting plate is fixed on the fixing seat;
one end of the pushing component is fixed on the fixed seat, and the other end of the pushing component penetrates through the reflecting plate and then is connected with the reflecting cover, so that the distance between the reflecting plate and the reflecting cover is adjusted.
17. The semiconductor device of claim 16, wherein the pushing assembly comprises a pushing seat and at least one thimble disposed on the pushing seat, and wherein one end of the thimble extends out from a top surface of the pushing seat and is connected to the reflecting cover.
18. The semiconductor device according to claim 16, wherein at least one probe is provided at a bottom end of the holder, and the probe sequentially passes through the holder and the reflection plate.
CN202210143062.2A 2022-02-16 2022-02-16 Temperature compensation method of semiconductor structure and semiconductor device Pending CN116646245A (en)

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