CN116633538A - Multi-protocol compatible quantum key distribution integrated chip for high-speed coding - Google Patents
Multi-protocol compatible quantum key distribution integrated chip for high-speed coding Download PDFInfo
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- 238000010586 diagram Methods 0.000 description 5
- 230000010363 phase shift Effects 0.000 description 5
- 230000002238 attenuated effect Effects 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L9/00—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
- H04L9/08—Key distribution or management, e.g. generation, sharing or updating, of cryptographic keys or passwords
- H04L9/0816—Key establishment, i.e. cryptographic processes or cryptographic protocols whereby a shared secret becomes available to two or more parties, for subsequent use
- H04L9/0852—Quantum cryptography
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/516—Details of coding or modulation
- H04B10/548—Phase or frequency modulation
- H04B10/556—Digital modulation, e.g. differential phase shift keying [DPSK] or frequency shift keying [FSK]
- H04B10/5561—Digital phase modulation
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/70—Photonic quantum communication
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L9/00—Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
- H04L9/08—Key distribution or management, e.g. generation, sharing or updating, of cryptographic keys or passwords
- H04L9/0816—Key establishment, i.e. cryptographic processes or cryptographic protocols whereby a shared secret becomes available to two or more parties, for subsequent use
- H04L9/0819—Key transport or distribution, i.e. key establishment techniques where one party creates or otherwise obtains a secret value, and securely transfers it to the other(s)
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Electromagnetism (AREA)
- Computer Security & Cryptography (AREA)
- Theoretical Computer Science (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The application discloses a multi-protocol compatible quantum key distribution integrated chip for high-speed coding, which comprises: the substrate is provided with a first adjustable light branching module, a second adjustable light branching module, a first optical phase modulation module, a third adjustable light branching module and an optical attenuation module which are sequentially connected, wherein the first adjustable light branching module is also sequentially connected with the second optical phase modulation module and the third adjustable light branching module; the first adjustable light splitting module, the second adjustable light splitting module and the third adjustable light splitting module are all used for adjusting and splitting an input signal; the first optical phase modulation module is used for delaying an input optical signal and adjusting the phase of the input optical signal; the second optical phase modulation module is used for adjusting the phase of an input optical signal; the light attenuation module is used for attenuating output light to a single photon magnitude; the chip has compact structure, high integration level and good stability, and is beneficial to low-cost popularization and application.
Description
Technical Field
The application relates to the technical field of quantum communication, in particular to a multi-protocol compatible quantum key distribution integrated chip for high-speed coding.
Background
The quantum secret communication system based on quantum key distribution is one of the most popular research fields at present, and compared with traditional password communication, the security of quantum key distribution is based on the basic principle of quantum mechanics rather than the complexity of mathematical calculation, and information receiving and transmitting parties find eavesdropping through the Hessenberg uncertainty principle and the unknown quantum state unclonable principle, so that the unconditional security of information is theoretically ensured.
At present, the transmitting end quantum code in the quantum key distribution system is mostly built by adopting discrete optical elements, and the quantum key distribution system has the advantages of large volume, complex structure, poor stability and high cost, and a code chip only supports a single quantum key distribution protocol, has poor flexibility and adaptability and is not beneficial to popularization and application, so that a multi-protocol compatible quantum key distribution integrated chip with compact structure, high integration level, good stability and low cost and high-speed code is needed to be designed.
Disclosure of Invention
In order to solve the technical problems, the application provides a multi-protocol compatible quantum key distribution integrated chip for high-speed coding, which has compact structure, high integration level, good stability and low cost.
To achieve the above object, the present application provides a multiprotocol compatible quantum key distribution integrated chip for high-speed encoding, comprising: the substrate is integrated with a first adjustable light branching module, a second adjustable light branching module, a first optical phase modulation module, a third adjustable light branching module and an optical attenuation module which are sequentially coupled and connected, wherein the first adjustable light branching module is also coupled and connected with a second optical phase modulation module, and the second optical phase modulation module is also coupled and connected with the third adjustable light branching module;
the first adjustable light splitting module, the second adjustable light splitting module and the third adjustable light splitting module are all used for adjusting and splitting an input signal;
the first optical phase modulation module is used for delaying an input optical signal and adjusting the phase of the input optical signal;
the second optical phase modulation module is used for adjusting the phase of an input optical signal;
the light attenuation module is used for attenuating output light to a single photon magnitude.
Optionally, the first tunable optical branching module includes a first thermo-optic modulator, a first carrier depletion modulator, a second thermo-optic modulator and a second carrier depletion modulator, the first thermo-optic modulator is connected in series with the first carrier depletion modulator, the second thermo-optic modulator is connected in series with the second carrier depletion modulator, an output end of the first carrier depletion modulator is coupled with the second optical phase modulation module, and an output end of the second carrier depletion modulator is coupled with the second tunable optical branching module.
Optionally, the second tunable optical branching module includes a third thermo-optic modulator, a third carrier depletion modulator, a fourth thermo-optic modulator, and a fourth carrier depletion modulator, where the third thermo-optic modulator and the third carrier depletion modulator are connected in series, the fourth thermo-optic modulator and the fourth carrier depletion modulator are connected in series, input ends of the third thermo-optic modulator and the fourth thermo-optic modulator are coupled to an output end of the second carrier depletion modulator, and output ends of the third carrier depletion modulator and the fourth carrier depletion modulator are coupled to the first optical phase modulation module.
Optionally, the first optical phase modulation module includes an optical delay line, a fifth thermo-optical modulator and a fifth carrier depletion modulator, where the fifth thermo-optical modulator and the fifth carrier depletion modulator are connected in series, an input end of the optical delay line is coupled to an output end of the fourth carrier depletion modulator, an input end of the fifth thermo-optical modulator is coupled to the third carrier depletion modulator, and an output end of the optical delay line and the fifth carrier depletion modulator is coupled to the third adjustable optical branching module.
Optionally, the second optical phase modulation module includes a sixth thermo-optical modulator and a sixth carrier depletion modulator, where the sixth thermo-optical modulator and the sixth carrier depletion modulator are connected in series; the input end of the sixth thermo-optic modulator is coupled with the output end of the first carrier depletion modulator; the output end of the sixth carrier depletion modulator is coupled to the third tunable optical branching module.
Optionally, the third tunable optical branching module includes a seventh thermo-optic modulator, a seventh carrier depletion modulator, an eighth thermo-optic modulator, and an eighth carrier depletion modulator; the seventh thermo-optic modulator is connected in series with the seventh carrier depletion modulator, and the eighth thermo-optic modulator is connected in series with the eighth carrier depletion modulator; the input end of the seventh thermo-optical modulator is coupled with the output end of the second optical phase modulation module, and the input end of the eighth thermo-optical modulator is coupled with the output end of the first optical phase modulation module; and the output end of the eighth carrier depletion modulator is coupled with the optical attenuation module.
Optionally, the light attenuation module includes: an electro-optical adjustable attenuator is provided,
the input end of the electro-optical adjustable attenuator is coupled with the output end of the eighth carrier depletion modulator;
the output end of the electro-optical adjustable attenuator is provided with an output port B.
Optionally, the first tunable optical branching module, the second tunable optical branching module and the third tunable optical branching module are all in a mach-zehnder interferometer structure, and heating electrodes are doped in an upper arm optical waveguide and a lower arm optical waveguide of the mach-zehnder interferometer structure respectively and carrier depletion modulators are cascaded;
the first optical phase modulator is of an asymmetric Mach-Zehnder interferometer structure, the shorter arm is of a doped heating electrode and is in cascade connection with a carrier depletion modulator structure, and the longer arm is of an optical delay line structure;
the second optical phase modulator is of a straight waveguide structure, and the waveguide is of a doped heating electrode and is of a cascade carrier depletion modulator structure;
preferably, the optical attenuator is a straight waveguide structure, and the waveguide is an electro-optic modulator structure doped with lead electrodes.
Compared with the prior art, the application has the following advantages and technical effects:
1) The application solves the compatibility problem among a plurality of different quantum key protocols by adopting the configurable on-chip unit, and can meet the coding requirements of the plurality of different quantum key distribution protocols;
2) The chip has compact structure, high integration level and good stability, and is beneficial to low-cost popularization and application.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application. In the drawings:
FIG. 1 is a schematic diagram of a multi-protocol compatible quantum key distribution integrated chip for high-speed encoding according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a BB84 phase protocol encoding process according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a time stamp-phase protocol encoding process of BB84 according to an embodiment of the present application;
FIG. 4 is a schematic diagram of a differential phase shift protocol encoding process according to an embodiment of the present application;
FIG. 5 is a schematic diagram of a coherent single-path protocol encoding process according to an embodiment of the present application;
the optical fiber circuit comprises a first adjustable optical branching module, a second adjustable optical branching module, 3, a first optical phase modulation module, 4, a second optical phase modulation module, 5, a third adjustable optical branching module, 6, an optical attenuation module, 7, a substrate, 101, a first thermal optical modulator, 103, a second thermal optical modulator, 102, a first carrier depletion modulator, 104, a second carrier depletion modulator, 201, a third thermal optical modulator, 203, a fourth thermal optical modulator, 202, a third carrier depletion modulator, 204, a fourth carrier depletion modulator, 301, a fifth thermal optical modulator, 302, a fifth carrier depletion modulator, 303, an optical delay line, 401, a sixth thermal optical modulator, 402, a sixth carrier depletion modulator, 501, a seventh thermal optical modulator, 503, an eighth thermal optical modulator, 502, a seventh carrier depletion modulator, 504, an eighth carrier depletion modulator, 601 and an electro-optical tunable attenuator.
Detailed Description
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other. The application will be described in detail below with reference to the drawings in connection with embodiments.
It should be noted that the steps illustrated in the flowcharts of the figures may be performed in a computer system such as a set of computer executable instructions, and that although a logical order is illustrated in the flowcharts, in some cases the steps illustrated or described may be performed in an order other than that illustrated herein.
The embodiment proposes a multi-protocol compatible quantum key distribution integrated chip for high-speed encoding, as shown in fig. 1, including: the first tunable optical branching module 1 is configured to adjustably split an input optical signal and configure coding requirements of different quantum key distribution protocols 1, and comprises a first thermo-optical modulator 101, a second thermo-optical modulator 103, a first carrier depletion modulator 102, a second carrier depletion modulator 104, a first output port and a second output port; a second tunable optical splitting module 2, configured to perform tunable optical splitting on an input optical signal, where the second tunable optical splitting module includes a third thermo-optical modulator 201, a fourth thermo-optical modulator 203, a third carrier depletion modulator 202, a fourth carrier depletion modulator 204, a third output port, and a fourth output port, and an input port of the second tunable optical splitting module is connected to the first output port; a first optical phase modulation module 3, configured to delay an input optical signal and adjust a phase of the input optical signal, and include a fifth thermo-optical modulator 301, a fifth carrier depletion modulator 302, an optical delay line 303, and a fifth output port, where two input ports are connected to the third output port and the fourth output port, respectively; a second optical phase modulation module 4, configured to adjust a phase of an input optical signal, including a sixth thermo-optical modulator 401, a sixth carrier depletion modulator 402, and a sixth output port, where an input port of the second optical phase modulation module is connected to the second output port; a third tunable optical splitting module 5, configured to adjustably split an input optical signal and prepare a decoy state, where the third tunable optical splitting module includes a seventh thermo-optical modulator 501, an eighth thermo-optical modulator 503, a seventh carrier depletion modulator 502, an eighth carrier depletion modulator 504, a seventh output port, and an output port C, and two input ports of the third tunable optical splitting module are connected to the fifth output port and the sixth output port, respectively; an optical attenuation module 6 for attenuating the output light to a single photon level, comprising an electro-optically tunable attenuator 601 and an output port B, the input port of which is connected to a seventh output port; the first adjustable optical branching module 1, the second adjustable optical branching module 2, the first optical phase modulation module 3, the second optical phase modulation module 4, the third optical adjustable branching module 5 and the optical attenuation module 6 are all of optical waveguide structures, and are integrated on the same substrate 7, and the optical waveguide materials are silicon.
The first adjustable optical branching module 1, the second adjustable optical branching module 2 and the third adjustable optical branching module 5 are of Mach-Zehnder interferometer structures, heating electrodes are doped in an upper arm optical waveguide or a lower arm optical waveguide of the Mach-Zehnder interferometer structures respectively, and carrier depletion modulators are cascaded, wherein the upper arm of the first adjustable optical branching module 1 is of a serial structure of a first thermo-optical modulator 101 and a first carrier depletion modulator 102, and the lower arm of the first adjustable optical branching module 1 is of a serial structure of a second thermo-optical modulator 103 and a second carrier depletion modulator 104; the upper arm of the second tunable optical branching module 2 is a series structure of a third thermo-optical modulator 201 and a third carrier depletion modulator 202, and the lower arm is a series structure of a fourth thermo-optical modulator 203 and a fourth carrier depletion modulator 204; the third tunable optical branching module 5 has an upper arm in a series structure of a seventh thermo-optical modulator 501 and a seventh carrier depletion modulator 502, and a lower arm in a series structure of an eighth thermo-optical modulator 503 and an eighth carrier depletion modulator 504.
The first optical phase modulation module 3 is an asymmetric mach-zehnder interferometer structure, the shorter arm is a doped heating electrode of the fifth thermo-optical modulator 301 and the fifth carrier depletion modulator 302 connected in series and is connected in cascade with the carrier depletion modulator structure, the longer arm is an optical delay line 303, the length difference of which is Δl=cΔt/n, where c is the light velocity in vacuum, n is the refractive index of the optical waveguide, and Δt is the delay time.
The second optical phase modulation module 4 is of a straight waveguide structure, the waveguide is a doped heating electrode and is in cascade connection with a carrier depletion modulator structure, certain voltage is applied to the heating electrode and the lead electrode, the modulation depth of the carrier depletion modulator is increased by utilizing the thermo-optical effect, and adjustable light splitting or phase modulation can be carried out in a larger amplitude.
The optical attenuation module 6 is a straight waveguide structure, and the waveguide is an electro-optical modulator structure doped with lead electrodes. The attenuation range of the optical attenuation module 6 is 0-90dB, and the carrier concentration in the silicon optical waveguide is changed by applying a certain voltage to the lead electrode and utilizing the plasma dispersion effect, so that the absorption coefficient is increased, and the attenuation of the transmission light is realized.
The substrate 7 is a silicon-on-insulator material, the optical waveguide materials of the first adjustable optical branching module 1, the second adjustable optical branching module 2, the first optical phase modulation module 3, the second optical phase modulation module 4, the third adjustable optical branching module 5 and the optical attenuation module 6 are silicon materials, the heating electrode material of the thermo-optical modulator is titanium, tungsten or titanium-tungsten alloy, and the lead electrode materials of the carrier depletion modulator and the electro-optical modulator are aluminum.
The optical signals are generated by a pulse laser, transmitted by an optical fiber and enter an input port A of the coding chip, and on-chip units are configured to select different coding modes according to different quantum key transmission protocols; the working modes of the chip when coding different quantum key distribution transmission protocols are listed:
(1) BB84 phase protocol
The BB84 phase protocol encoding process in this embodiment is shown in fig. 2. The pulse laser generates a pulse optical signal with a certain frequency, the pulse optical signal enters the first adjustable optical branching module 1 of the chip after being transmitted by the optical fiber, and the optical pulse is singly output to the second adjustable optical branching module 2 at the first output port of the first adjustable optical branching module 1 by applying a certain voltage to the upper arm modulator and the lower arm modulator of the first adjustable optical branching module 1. By applying a certain voltage to the upper and lower arm modulators of the second adjustable optical branching module 2, the double pulse is subjected to unequal ratio light splitting at the third output port and the fourth output port of the second adjustable optical branching module 2 and enters the first optical phase modulation module 3, so that loss difference generated when the double pulse enters the delay line with delta L path difference and the modulator is compensated, and power balance of the output pulse is ensured. The optical pulse is subjected to a pair of time stamps by applying different voltages to the modulation arms of the first optical phase modulation module 3 to dynamically modulate the phase, and the phase differences of pi/2, 3 pi/2, 0 and pi are randomly generated by passing through a delay line and enter the third optical tunable branching module 5 through a fifth output port. By applying a certain voltage to the upper and lower arm modulators of the third tunable optical branching module 5, the optical pulse is split in equal proportion at a seventh output port and an output port C of the third tunable optical branching module 5, enters the optical attenuation module 6 through the seventh output port, and enters the photon detector through the output port C for quantum state monitoring. By applying a certain voltage to the electro-optical modulator of the optical attenuation module 6, the output light is attenuated to a single photon level, and is output to the optical fiber through the output port B, so that four quantum states |0>, |1>, |++ >, and|- > are prepared.
(2) BB84 timestamp-phase protocol
The BB84 phase protocol encoding process in this embodiment is shown in fig. 2. The pulse laser generates a pulse optical signal with a certain frequency, the pulse optical signal enters the first adjustable optical branching module 1 of the chip after being transmitted by the optical fiber, and the optical pulse is singly output to the second adjustable optical branching module 2 at the first output port of the first adjustable optical branching module 1 by applying a certain voltage to the upper arm modulator and the lower arm modulator of the first adjustable optical branching module 1. By applying a certain voltage to the upper and lower arm modulators of the second adjustable optical branching module 2, the double pulse is subjected to unequal ratio light splitting at the third output port and the fourth output port of the second adjustable optical branching module 2 and enters the first optical phase modulation module 3, so that loss difference generated when the double pulse enters the delay line with delta L path difference and the modulator is compensated, and power balance of the output pulse is ensured. The optical pulse is subjected to a pair of time stamps by applying different voltages to the modulation arms of the first optical phase modulation module 3 to dynamically modulate the phase, and the phase differences of pi/2, 3 pi/2, 0 and pi are randomly generated by passing through a delay line and enter the third optical tunable branching module 5 through a fifth output port. By applying a certain voltage to the upper and lower arm modulators of the third tunable optical branching module 5, the optical pulse is split in equal proportion at a seventh output port and an output port C of the third tunable optical branching module 5, enters the optical attenuation module 6 through the seventh output port, and enters the photon detector through the output port C for quantum state monitoring. By applying a certain voltage to the electro-optical modulator of the optical attenuation module 6, the output light is attenuated to a single photon level, and is output to the optical fiber through the output port B, so that four quantum states |0>, |1>, |++ >, and|- > are prepared.
(3) Differential phase shift protocol
The differential phase shift protocol encoding process in this embodiment is shown in fig. 4. The pulse laser generates a pulse optical signal with a certain frequency, the pulse optical signal enters the first adjustable optical branching module 1 of the chip of the application after being transmitted by the optical fiber, and the optical pulse is singly output to the second optical phase modulation module 4 at the second output port of the first adjustable optical branching module 1 by applying a certain voltage to the upper arm modulator and the lower arm modulator of the first adjustable optical branching module 1. By applying a certain voltage to the second optical phase modulation module 4, the optical pulse is dynamically adjusted, so that the phase shift of 0 or pi is realized, and the optical pulse enters the third adjustable optical branching module 5 through the sixth output port. By applying a certain voltage to the upper and lower arm modulators of the third tunable optical branching module 5, the optical pulse is split in equal proportion at a seventh output port and an output port C of the third tunable optical branching module 5, enters the optical attenuation module 6 through the seventh output port, and enters the photon detector through the output port C for quantum state monitoring. By applying a certain voltage to the electro-optical modulator of the optical attenuation module 6, the output light is attenuated to a single photon level, and is output to the optical fiber through the output port B, so that two quantum states |0> |1> areprepared.
(4) Coherent state one-way protocol
The coherent one-way protocol encoding process in this embodiment is shown in fig. 5. The pulse laser generates a pulse optical signal with a certain frequency, the pulse optical signal enters the first adjustable optical branching module 1 of the chip of the application after being transmitted by the optical fiber, and the optical pulse is singly output to the second optical phase modulation module 4 at the second output port of the first adjustable optical branching module 1 by applying a certain voltage to the upper arm modulator and the lower arm modulator of the first adjustable optical branching module 1. By applying a certain voltage to the second optical phase modulation module 4, the optical pulse is dynamically adjusted, so that 0 phase shift is realized, and the optical pulse enters the third adjustable optical branching module 5 through the sixth output port. By applying a certain voltage to the upper and lower arm modulators of the third tunable optical branching module 5, the time stamp performs intensity random modulation on the third tunable optical branching module 5 to generate a decoy state, and light is split in equal proportion at a seventh output port and an output port C, enters the optical attenuation module 6 through the seventh output port, and enters the photon detector through the output port C to perform quantum state monitoring. By applying a certain voltage to the electro-optical modulator of the optical attenuation module 6, the output light is attenuated to a single photon level, and is output to the optical fiber through the output port B, so that three quantum states |0>, |1>, |d >, and a decoy state are prepared.
The present application is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present application are intended to be included in the scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.
Claims (8)
1. A multi-protocol compatible quantum key distribution integrated chip for high-speed encoding, comprising: the substrate (7), the substrate (7) is integrated with a first adjustable light branching module (1), a second adjustable light branching module (2), a first optical phase modulation module (3), a third adjustable light branching module (5) and an optical attenuation module (6) which are sequentially coupled, wherein the first adjustable light branching module (1) is also connected with a second optical phase modulation module (4), and the second optical phase modulation module (4) is also connected with the third adjustable light branching module (5);
the first adjustable light splitting module (1), the second adjustable light splitting module (2) and the third adjustable light splitting module (5) are all used for adjusting and splitting an input signal;
the first optical phase modulation module (3) is used for delaying an input optical signal and adjusting the phase of the input optical signal;
the second optical phase modulation module (4) is used for adjusting the phase of an input optical signal;
the light attenuation module (6) is used for attenuating the output light to a single photon magnitude.
2. The multi-protocol compatible quantum key distribution integrated chip for high speed encoding according to claim 1, wherein the first tunable optical branching module (1) comprises a first thermo-optic modulator (101), a first carrier depletion modulator (102), a second thermo-optic modulator (103) and a second carrier depletion modulator (104), the first thermo-optic modulator (101) and the first carrier depletion modulator (102) are connected in series, the second thermo-optic modulator (103) and the second carrier depletion modulator (104) are connected in series, and the output ends of the first carrier depletion modulator (102) and the second carrier depletion modulator (104) are coupled to the second optical phase modulation module (4) and the second tunable optical branching module (2), respectively.
3. A multiprotocol compatible quantum key distribution integrated chip for high speed encoding according to claim 2, wherein the second tunable optical branching module (2) comprises a third thermo-optical modulator (201), a third carrier depletion modulator (202), a fourth thermo-optical modulator (203) and a fourth carrier depletion modulator (204), the third thermo-optical modulator (201) and the third carrier depletion modulator (202) are connected in series, the fourth thermo-optical modulator (203) and the fourth carrier depletion modulator (204) are connected in series, the input ends of the third thermo-optical modulator (201) and the fourth thermo-optical modulator (203) are connected with the output end of the first tunable optical branching module (1), and the output ends of the third carrier depletion modulator (202) and the fourth carrier depletion modulator (204) are coupled and then connected with the first optical phase modulation module (3).
4. A multiprotocol compatible quantum key distribution integrated chip for high speed encoding according to claim 3, wherein said first optical phase modulation module (3) comprises an optical delay line (303), a fifth thermo-optical modulator (301) and a fifth carrier depletion modulator (302), said fifth thermo-optical modulator (301) and fifth carrier depletion modulator (302) being connected in series, said optical delay line (303), an input of said fifth thermo-optical modulator (301) and an output of said second tunable optical branching module (2) being connected, said optical delay line (303), an output of said fifth carrier depletion modulator (302) being coupled and then being coupled to said third tunable optical branching module (5).
5. A multiprotocol compatible quantum key distribution integrated chip for high speed coding according to claim 4, wherein the second optical phase modulation module (4) comprises a sixth thermo-optical modulator (401), a sixth carrier depletion modulator (402), the sixth thermo-optical modulator (401) and the sixth carrier depletion modulator (402) being in series; the input end of the sixth thermo-optical modulator (401) is connected with the output end of the first adjustable light branching module (1); an output of the sixth carrier depletion modulator (402) is connected to the third tunable optical branching module (5).
6. A multiprotocol compatible quantum key distribution integrated chip for high speed coding according to claim 5, wherein the third tunable optical branching module (5) comprises a seventh thermo-optical modulator (501), a seventh carrier depletion modulator (502), an eighth thermo-optical modulator (503) and an eighth carrier depletion modulator (504); the seventh thermo-optic modulator (501) and the seventh carrier depletion modulator (502) are connected in series, and the eighth thermo-optic modulator (503) and the eighth carrier depletion modulator (504) are connected in series; the input ends of the seventh thermo-optical modulator (501) and the eighth thermo-optical modulator (503) are coupled with the output ends of the first optical phase modulation module (3) and the second optical phase modulation module (4); the output ends of the seventh carrier depletion modulator (502) and the eighth carrier depletion modulator (504) are coupled and then connected with the light attenuation module (6).
7. A multiprotocol compatible quantum key distribution integrated chip for high speed coding according to claim 6, wherein said optical attenuation module (6) comprises: an electro-optically tunable attenuator (601),
wherein the input end of the electro-optical adjustable attenuator (601) is connected with the output end of the third adjustable light branching module (5);
the output end of the electro-optical adjustable attenuator (601) is provided with an output port B.
8. The multi-protocol compatible quantum key distribution integrated chip for high speed encoding according to claim 1, wherein the first tunable optical branching module (1), the second tunable optical branching module (2) and the third tunable optical branching module (5) are each a mach-zehnder interferometer structure, and heating electrodes are doped in an upper arm optical waveguide and a lower arm optical waveguide of the mach-zehnder interferometer structure, respectively, and carrier depletion modulators are cascaded;
the first optical phase modulation module (3) is of an asymmetric Mach-Zehnder interferometer structure, the short arm is of a series structure of a fifth thermo-optical modulator (301) and a fifth carrier depletion modulator (302), and the long arm is of an optical delay line (303) structure;
the second optical phase modulation module (4) is of a straight waveguide structure, and the waveguide is a doped heating electrode and is in cascade connection with a carrier depletion modulator structure;
the optical attenuation module (6) is of a straight waveguide structure, and the waveguide is of an electro-optical modulator structure doped with lead electrodes.
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