CN116633309A - Bulk acoustic wave resonator and preparation method thereof - Google Patents
Bulk acoustic wave resonator and preparation method thereof Download PDFInfo
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- CN116633309A CN116633309A CN202310622780.2A CN202310622780A CN116633309A CN 116633309 A CN116633309 A CN 116633309A CN 202310622780 A CN202310622780 A CN 202310622780A CN 116633309 A CN116633309 A CN 116633309A
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000008093 supporting effect Effects 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 230000000149 penetrating effect Effects 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 15
- 230000002411 adverse Effects 0.000 abstract description 10
- 238000005530 etching Methods 0.000 abstract description 10
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- 238000005137 deposition process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000012546 transfer Methods 0.000 description 8
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
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- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The application provides a bulk acoustic wave resonator and a preparation method thereof, which relate to the technical field of resonators, and the internal stress of a piezoelectric layer is released by etching a stress release groove on the piezoelectric layer, so that the problem of cracking possibly caused by overlarge stress in the piezoelectric layer is effectively solved, and a patterned electrode is formed in a substrate transferring manner after a piezoelectric layer deposition process, so that adverse effects on the electrode caused by the growth environment of the piezoelectric layer are avoided. Meanwhile, the first electrode and the supporting layer can form a first sound reflection structure positioned outside the effective resonance area in the first electrode and the supporting layer by using the stress release groove, so that sound waves can be reflected into the effective resonance area from the transverse direction through the first sound reflection structure, and the Q value of the device is improved.
Description
Technical Field
The application relates to the technical field of resonators, in particular to a bulk acoustic wave resonator and a preparation method thereof.
Background
The thin film bulk acoustic resonator resonates by using the piezoelectric effect of the piezoelectric crystal, and thus the volume of the thin film bulk acoustic resonator is greatly reduced from that of a conventional electromagnetic filter. And the film bulk acoustic resonator also has the characteristics of high roll-off, low insertion loss and the like, so that the filter taking the film bulk acoustic resonator as a core is widely applied to communication systems.
In order to obtain better performance, the conventional film bulk acoustic resonator generally adopts a monocrystalline piezoelectric film with higher quality as a piezoelectric crystal, but is limited by the reason that the growth temperature of the monocrystalline piezoelectric film is higher and the internal stress of the film is larger, so that the monocrystalline piezoelectric film is easy to crack, thereby influencing the performance of the device, and meanwhile, in the working state, the vibration mode of waves generated by the film bulk acoustic resonator is divided into a longitudinal mode and a transverse mode. The longitudinal mode is the main resonance, in the mode, longitudinal waves periodically and reversely move between the electrodes, the longitudinal waves present the same phase at all positions of the electrodes, the longitudinal waves propagate along the longitudinal direction of the piezoelectric layer of the film bulk acoustic resonator, and the longitudinal waves are reflected back to the resonance area at the junction of the bottom electrode and air by arranging a cavity structure between the substrate and the bottom electrode, so that the loss of acoustic wave energy is avoided; the transverse mode is a parasitic mode, the resonator generates transverse waves while generating longitudinal waves, and vibration of the transverse waves can cause energy leakage at the boundary of the effective area of the resonator to cause energy loss, so that adverse effects are generated on the Q value. Resulting in lower Q values for existing thin film bulk acoustic resonators.
Disclosure of Invention
The present application aims to overcome the above-mentioned drawbacks of the prior art and to provide a bulk acoustic wave resonator and a method for manufacturing the same.
In order to achieve the above purpose, the technical scheme adopted by the embodiment of the application is as follows:
in one aspect of the embodiments of the present application, a bulk acoustic wave resonator is provided, including a substrate, and a supporting layer, a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, where the first electrode, the piezoelectric layer, and the second electrode form a stacked structure, the piezoelectric layer is provided with a stress release groove penetrating through the piezoelectric layer, the stress release groove is located at an outer side of the stacked structure, the first electrode is disposed on the piezoelectric layer, and one end of the first electrode extends into the stress release groove to form an electrode extension, the supporting layer has a supporting extension extending into the stress release groove, the electrode extension and the supporting extension are alternately disposed to form a first acoustic reflection structure, and the first acoustic reflection structure is disposed at the outer side of the stacked structure.
Optionally, the piezoelectric layer forms a first opening, the first opening and the supporting layer are alternately arranged to form a second sound reflection structure, and the second sound reflection structure is arranged on the outer side of the stacking structure.
Optionally, a cavity is formed between the support layer and the first electrode, and the cavity is communicated with the first opening.
Optionally, the second electrode includes an electrode lead-out portion and a second electrode portion disposed at intervals, and the electrode extension portion of the first electrode is electrically connected to the electrode lead-out portion.
Optionally, at least one first protrusion and/or first groove is provided in the support extension, the first protrusion or first groove being provided in the longitudinal or transverse direction of the support extension.
Optionally, the first recess longitudinally extends through the support extension to form a second opening, and the support extension, the second opening, and the electrode extension form a third acoustic emission structure.
Optionally, the second opening is filled with air or phonon crystals.
In another aspect of the embodiment of the present application, a method for preparing a bulk acoustic wave resonator is provided, including:
forming a piezoelectric layer on a temporary substrate;
forming a stress relief groove penetrating through the piezoelectric layer on the piezoelectric layer, wherein the stress relief groove is positioned outside an effective resonance area of the bulk acoustic wave resonator;
sequentially forming a first electrode and a supporting layer on the piezoelectric layer, wherein the first electrode is provided with an electrode extension part extending into the stress release groove, the supporting layer is provided with a supporting extension part extending into the stress release groove, and the electrode extension part and the supporting extension part are alternately arranged to form a first sound reflection structure;
transferring one side of the support layer, which is away from the temporary substrate, to the base, and removing the temporary substrate to expose the first surface of the piezoelectric layer, which is away from the base;
a second electrode is disposed on the first surface of the piezoelectric layer.
Optionally, sequentially forming the first electrode and the support layer on the piezoelectric layer includes:
forming a first electrode on the piezoelectric layer, wherein the first electrode has an electrode extension extending into the stress relief groove;
forming a first sacrificial layer on the first electrode, wherein the first sacrificial layer is positioned on one side surface of the first electrode, which is away from the piezoelectric layer, and one end of the first sacrificial layer extends into the stress release groove and is exposed out of the first surface, the first sacrificial layer is used for releasing and forming a first opening and a cavity which are mutually communicated, the first opening is exposed out of the first surface, and the cavity is positioned between the supporting layer and the first electrode;
a support layer is formed over the piezoelectric layer covering the first electrode and the first sacrificial layer, wherein the support layer has support extensions that extend into the stress relief grooves.
Optionally, the second electrode includes an electrode lead-out portion and a second electrode portion spaced from each other, and the electrode extension portion of the first electrode extends to the first surface through the stress relief groove and is electrically connected to the electrode lead-out portion.
The beneficial effects of the application include:
the application provides a bulk acoustic wave resonator and a preparation method thereof, wherein a stress release groove penetrating through a piezoelectric layer is formed on the piezoelectric layer by etching, so that the piezoelectric layer can release internal stress through the stress release groove, the problem of cracking possibly caused by overlarge stress in the piezoelectric layer is effectively avoided, the electrode forming steps are all carried out after the piezoelectric layer in a substrate transferring manner, and adverse effects on the electrode caused by the growth of the piezoelectric layer can be avoided. Meanwhile, the first electrode and the supporting layer can form a first sound reflection structure positioned outside the effective resonance area in the first electrode and the supporting layer by using the stress release groove, so that sound waves can be reflected into the effective resonance area from the transverse direction through the first sound reflection structure, and the Q value of the device is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 2 is a schematic diagram of a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 3 is a second schematic diagram of a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 4 is a top view of the bulk acoustic wave resonator shown in FIG. 3 in a fabricated state;
FIG. 5 is a third schematic diagram illustrating a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 6 is a top view of the bulk acoustic wave resonator shown in FIG. 5 in a fabricated state;
FIG. 7 is a schematic diagram showing a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 8 is a top view of the bulk acoustic wave resonator shown in fig. 7 in a fabricated state;
FIG. 9 is a schematic diagram showing a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 10 is a top view of the bulk acoustic wave resonator shown in fig. 9 in a prepared state;
FIG. 11 is a schematic diagram showing a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 12 is a schematic diagram showing a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 13 is a schematic diagram illustrating a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 14 is a top view of the bulk acoustic wave resonator shown in fig. 13 in a prepared state;
FIG. 15 is a schematic diagram illustrating a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 16 is a top view of the bulk acoustic wave resonator shown in fig. 15 in a prepared state;
fig. 17 is a schematic structural diagram of a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 18 is a top view of the bulk acoustic wave resonator shown in FIG. 17;
FIG. 19 is a schematic view showing a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 20 is a schematic diagram showing an eleventh embodiment of a method for manufacturing a bulk acoustic wave resonator;
fig. 21 is a schematic structural diagram of another bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 22 is a schematic diagram of a bulk acoustic wave resonator according to an embodiment of the present application;
FIG. 23 is a schematic diagram showing a partial structure of a bulk acoustic wave resonator according to an embodiment of the present application;
fig. 24 is a schematic structural diagram of another bulk acoustic wave resonator according to an embodiment of the present application.
Icon: icon: 110—a temporary substrate; 120-a piezoelectric layer; 121-stress relief groove; 130-a first electrode; 131-an electrode body layer; 132-electrode extensions; 140-a first sacrificial layer; 141-a first sublayer; 142-a second sub-layer; 143-a second sacrificial layer; 150-a support layer; 151-support extensions; 160-a bonding layer; 161-a first bonding layer; 162-a second bonding layer; 170-a substrate; 180-a second electrode; 181-a second electrode portion; 182-electrode lead-out portion; 191-cavity; 192-a first opening; 210-a second opening; 220-phonon crystals; 230-a first groove; 240-first bump.
Detailed Description
The embodiments set forth below represent the information necessary to enable those skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or extending "onto" another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly extending onto" another element, there are no intervening elements present. Also, it will be understood that when an element such as a layer, region or substrate is referred to as being "on" or extending "over" another element, it can be directly on or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly over" another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.
Related terms such as "below" or "above" … "or" upper "or" lower "or" horizontal "or" vertical "may be used herein to describe one element, layer or region's relationship to another element, layer or region as illustrated in the figures. It should be understood that these terms, and those terms discussed above, are intended to encompass different orientations of the device in addition to the orientation depicted in the figures.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
In another aspect of the embodiments of the present application, a method for preparing a bulk acoustic wave resonator is provided, as shown in fig. 1, where the method includes:
s010: a piezoelectric layer is formed on the temporary substrate.
As shown in fig. 2, a piezoelectric layer 120 is deposited on a temporary substrate 110, wherein the piezoelectric layer 120 may be a single crystal piezoelectric layer, a composite piezoelectric layer, or a piezoelectric layer doped with a metal element. The piezoelectric layer is deposited on the upper surface of the temporary substrate 110 by an MOCVD (metal organic chemical vapor deposition) or high temperature PVD (physical vapor deposition) method. In order to solve the problem of the increase of the internal stress of the piezoelectric layer by growing the piezoelectric layer by MOCVD or high temperature PVD, which results in the increase of the internal stress of the piezoelectric layer 120, it is proposed to form a through stress relief groove in the piezoelectric layer 120.
S020: a stress relief groove 121 penetrating the piezoelectric layer 120 is formed on the piezoelectric layer 120, wherein the stress relief groove is located outside the effective resonance region of the bulk acoustic wave resonator.
As shown in fig. 3 and 4, the piezoelectric layer 120 is etched so as to form stress relief grooves 121 penetrating the piezoelectric layer 120 on the piezoelectric layer 120, so that the internal stress of the piezoelectric layer 120 is relieved by the stress relief grooves 121, thereby preventing the piezoelectric layer 120 from cracking due to the excessive internal stress. When the stress relief groove 121 is formed by etching, an ICP (inductively coupled plasma) etching method, specifically, may be employed: by introducing O 2 、Cl 2 、BCl 3 The gas is decomposed by inductively coupled plasma glow discharge to generate plasma having strong chemical activity, and the piezoelectric layer 120 is chemically reacted and physically etched under acceleration of an electric field. It should be understood that the side walls of the stress relief groove 121 are not limited to right angles and may have a certain inclination angle. The stress release groove 121 is located outside the effective resonance area of the bulk acoustic wave resonator, so that the influence of the stress release groove on the effective resonance area can be effectively avoided, and meanwhile, the first acoustic reflection structure can be conveniently formed outside the effective resonance area. When an electrical signal of high frequency is applied between the first electrode 130 and the second electrode 180, a bulk acoustic wave (Bulk Acoustic Wave, BAW) propagating in the thickness direction of the piezoelectric layer 120 is excited within the piezoelectric layer 120 due to the inverse piezoelectric effect of the piezoelectric layer 120. Referring to fig. 17 of the present application, the effective resonance area of the bulk acoustic wave resonator is the overlapping area of the first electrode 130, the piezoelectric layer 120, the second electrode 180 and the cavity 191The domain is defined as the effective resonance area of the bulk acoustic wave resonator.
S030: and forming a first electrode and a supporting layer on the piezoelectric layer in sequence, wherein the first electrode is provided with an electrode extension part extending into the stress release groove, the supporting layer is provided with a supporting extension part extending into the stress release groove, and the electrode extension part and the supporting extension part are alternately arranged to form a first sound reflection structure.
Since the growth temperature of the piezoelectric layer 120 is high, in order to avoid adverse effects on the electrode, the electrode manufacturing step may be performed after the piezoelectric layer 120, as shown in fig. 5 and 6, a metal layer is continuously deposited on the piezoelectric layer 120 having the stress relief groove 121, and the metal layer is patterned as required, so that the remaining metal portion serves as the first electrode 130.
Referring to fig. 9 and 10, in order to effectively support the piezoelectric layer 120 and the first electrode 130, the deposition of the support layer 150 on the device surface may be continued such that the support layer 150 covers the first electrode 130 and the piezoelectric layer 120, thereby providing effective support thereto.
Referring to fig. 9 and 10, the first electrode 130 has an electrode extension 132 extending into the stress relief groove, the support layer 150 has a support extension 151 extending into the stress relief groove, and since the stress relief groove 121 is located outside the bulk acoustic wave resonator effective resonance region a, the electrode extension 132 and the support extension 151 are alternately arranged to form a first acoustic reflection structure located outside the effective resonance region, so that an acoustic wave can be reflected back into the effective resonance region from the lateral direction by the first acoustic reflection structure, thereby improving the Q value of the device.
S040: and transferring one side of the support layer away from the temporary substrate to the base, and removing the temporary substrate to expose the first surface of the piezoelectric layer away from the base.
To facilitate formation of the second electrode 180 on a side of the piezoelectric layer 120 facing away from the first electrode 130 (i.e., the first surface), substrate transfer may also be performed, for example, by transferring a side of the support layer 150 facing away from the temporary substrate 110 to the base 170 as shown in fig. 11 and 12, turning the device over, and removing the temporary substrate 110 so that the first surface of the piezoelectric layer 120 facing away from the base 170 is exposed, as shown in fig. 13 and 14.
S050: a second electrode is disposed on the first surface of the piezoelectric layer.
As shown in fig. 15 and 16, since the first surface of the piezoelectric layer 120 is exposed, a metal layer may be deposited on the first surface of the piezoelectric layer 120 and patterned so that the remaining metal portion serves as the second electrode 180, whereby the first electrode 130 and the second electrode 180 are formed on opposite side surfaces of the piezoelectric layer 120 in the thickness direction, respectively, so that the piezoelectric layer 120 can be induced to complete the mutual conversion of mechanical energy and electrical energy when a driving voltage is applied to the first electrode 130 and the second electrode 180.
In summary, the stress release groove 121 penetrating through the piezoelectric layer 120 is etched on the piezoelectric layer 120, so that the piezoelectric layer 120 can release internal stress through the stress release groove 121, the problem of cracking possibly caused by excessive internal stress of the piezoelectric layer 120 is effectively avoided, the electrode forming steps are all performed after the piezoelectric layer 120 in a substrate transferring manner, and adverse effects on the electrode caused by the high-temperature growth environment of the piezoelectric layer 120 can be avoided. Meanwhile, the first electrode and the supporting layer can form a first sound reflection structure positioned outside the effective resonance area in the first electrode and the supporting layer by using the stress release groove, so that sound waves can be reflected into the effective resonance area from the transverse direction through the first sound reflection structure, and the Q value of the device is improved.
As shown in fig. 3 and 4, the stress release groove 121 may be located at a peripheral side of the effective resonance area, so that a certain space may be occupied by pre-filling a part of the space in the stress release groove 121 with a sacrificial layer, and when the sacrificial layer is finally released, the space originally filled with the sacrificial layer forms a first opening 192, and in view of the location of the stress release groove 121, the first opening 192 may also be located at the peripheral side of the effective resonance area, so that the peripheral side of the effective resonance area may directly contact with air in the first opening 192, thereby reflecting the transverse sound wave, so that energy is concentrated in the effective resonance area, so as to further improve the Q value of the device. When the sacrificial layer is arranged, the position of the sacrificial layer can be reasonably controlled according to the requirement, and for the convenience of understanding, the embodiment of the application is schematically described below;
in some embodiments, when the first electrode 130 and the support layer 150 are sequentially formed on the piezoelectric layer 120 through S030: as shown in fig. 5 and 6, the first electrode 130 may be formed on the piezoelectric layer 120, then, as shown in fig. 7 and 8, the first sacrificial layer 140 is continuously deposited on the first electrode 130, and the first sacrificial layer 140 includes two continuous portions, that is, the first sacrificial layer 140 includes a first sub-layer 141 and a second sub-layer 142, the first sub-layer 141 is correspondingly located on a side surface of the first electrode 130 facing away from the piezoelectric layer 120 (the side surface is opposite to the first surface in a thickness direction, for convenience of understanding, hereinafter referred to as a second surface), and the second sub-layer 142 is continuously formed with the first sub-layer 141 and extends from the second surface of the piezoelectric layer 120 into the stress relief groove 121, thereby filling a part of the space in the stress relief groove 121, then, as shown in fig. 9 and 10, the support layer 150 is continuously deposited, the support layer 150 covers the upper surface of the device in fig. 8, and the support layer 150 may adaptively fill the remaining space in the stress relief groove 121 to form the support extension 151, so as to have a good support effect. Then, the substrate transfer and the fabrication of the second electrode 180 are completed through S040 and S050. As shown in fig. 17 and 18, finally, the continuous second sub-layer 142 and the first sub-layer 141 are released, so that the space originally filled by the second sub-layer 142 in the stress release groove 121 is empty to form a first opening 192, so that the space originally filled by the first sub-layer 141 between the support layer 150 and the first electrode 130 is empty to form a cavity 191, and since the first opening 192 is just located at the periphery of the effective resonance area a, the periphery of the effective resonance area a can be directly contacted with air in the cavity, thereby reflecting the transverse sound wave, and the cavity 191 is located below the effective resonance area a, and can also reflect the sound wave, so that energy is concentrated in the effective resonance area a, so as to improve the Q value of the device.
Further, as shown in fig. 7 and 8, when the second sub-layer 142 is partially filled in the stress release groove 121, the second sub-layer 142 may extend to the first surface of the piezoelectric layer 120 through the stress release groove 121, so, during final release, as shown in fig. 13 to 16, since the second sub-layer 142 is around the effective resonator area, the second sub-layer 142 may be exposed on the first surface, and the second sub-layer 142 exposed on the first surface and the first sub-layer 141 continuous with the second sub-layer 142 may be directly released, in other words, during release of the second sub-layer 142, the stress release groove 121 may be used to directly complete release of the second sub-layer 142 and the first sub-layer 141, thereby avoiding a complex process of additionally providing a release hole and then releasing the first sacrificial layer 140 through the release hole.
In some embodiments, when the first electrode 130 and the support layer 150 are sequentially formed on the piezoelectric layer 120 through S030: as shown in fig. 5 and 6, the first electrode 130 may be formed on the piezoelectric layer 120, then, as shown in fig. 19, a portion of the space within the stress relief groove 121 is filled with the second sacrificial layer 143 (corresponding to the aforementioned second sub-layer 142), and then, as shown in fig. 20, the deposition of the support layer 150 is continued, the support layer 150 may cover the upper surface of the device shown in fig. 19, and the support layer 150 may adaptively fill the remaining space within the stress relief groove 121 to form the support extension 151 so as to have a good support effect. And then the substrate transfer and the fabrication of the second electrode 180 are completed through S040 and S050, and finally the second sacrificial layer 143 is released, so that the space originally filled by the second sacrificial layer 143 in the stress release groove 121 is empty to form the first opening 192, and the first opening 192 is just positioned on the periphery side of the effective resonator, so that the periphery side of the effective resonance area can be directly contacted with air in the first opening, thereby reflecting transverse sound waves, and enabling energy to be concentrated in the effective resonance area so as to improve the Q value of the device.
Further, as shown in fig. 19, when the second sacrificial layer 143 is partially filled in the stress release groove 121, the second sacrificial layer 143 may extend to the first surface of the piezoelectric layer 120 through the stress release groove 121, so, during final release, since the second sacrificial layer 143 is around the effective resonator area, the second sacrificial layer 143 may be exposed on the first surface, so that the second sacrificial layer 143 exposed on the first surface is conveniently released, in other words, when the second sacrificial layer 143 is released, the stress release groove 121 may be used to directly complete the release of the second sacrificial layer 143, which avoids a complex process of additionally providing a release hole and then releasing the second sacrificial layer 143 through the release hole.
It should be understood that the effective resonance region of the bulk acoustic wave resonator is generally defined as an overlapping region of the first electrode 130, the piezoelectric layer 120, and the second electrode 180 in the thickness direction.
In order to facilitate the application of the driving voltage to the first electrode 130 and the second electrode 180, it is also possible to draw the first electrode 130 out to the first surface of the piezoelectric layer 120, and thus, when the first electrode 130 is formed on the piezoelectric layer 120, it is possible to perform the following steps: as shown in fig. 5 and 6, the first electrode 130 may include a continuous electrode body layer 131 and an electrode extension 132, wherein the electrode body layer 131 is located on the second surface of the piezoelectric layer 120, and the electrode extension 132 extends to the first surface of the piezoelectric layer 120 through the stress relief groove 121 after being continuous with the electrode body layer 131. Then, the substrate transfer and the fabrication of the second electrode 180 are completed through S040 and S050, the second electrode 180 may include an electrode lead-out portion 182 and a second electrode portion 181 which are spaced from each other, the second electrode portion 181 may be an upper electrode, the electrode body layer 131 may be a lower electrode, the two cooperate with the piezoelectric layer 120 to construct an effective resonance region, and the electrode lead-out portion 182 is in contact connection with the electrode extension portion 132 on the first surface, so as to facilitate the application of a driving voltage to the lower electrode. In this process, since the electrode extension 132 of the first electrode 130 is directly exposed on the first surface by using the stress relief groove 121, the complex process of additionally providing an electrode lead-out hole and then providing a metal layer in the electrode lead-out hole to lead out the lower electrode to the first surface is avoided, and the manufacturing of the electrode lead-out hole may have a series of adverse effects due to over etching, for example, because the over etching causes unexpected etching to the electrode, thereby reducing the reliability, so that the present embodiment can effectively avoid the occurrence of such adverse situations.
The stress relief groove 121 is located at the circumferential side of the effective resonance region, and may have various manners, for example, the stress relief groove 121 may be looped one round (referred to as a first loop shape for ease of understanding) at the circumferential side of the effective resonance region; further, as shown in fig. 4, the stress relief groove 121 may also be a grid structure including a first ring shape, so that the internal stress of the entire piezoelectric layer 120 can be relieved more uniformly, and the situation of insufficient local stress relief is avoided. Of course, the stress relief groove 121 may also include multiple segments of sub-grooves that are spaced apart and do not communicate with each other. And the specific shape of the stress relief groove 121 is not limited in the present application, and may be reasonably selected according to actual needs.
The type of the first opening 192 may also be adaptively changed with various arrangements of the stress relief groove 121, for example, as shown in fig. 8, the first opening 192 and the electrode extension 132 may together enclose the effective resonance region, thereby enabling the first opening 192 to surround the circumference of the effective resonance region as much as possible, and of course, in other embodiments, the first opening 192 may also include multiple sub-cavities spaced apart.
As shown in fig. 11 and 12, in the case of performing substrate transfer, a first bonding layer 161 may be formed on a surface of a side of the support layer 150 facing away from the temporary substrate 110, a second bonding layer 162 may be formed on a surface of the base 170, and then the bonding layer 160 may be formed by bonding the first bonding layer 161 and the second bonding layer 162, so as to improve the reliability of the device.
In one aspect of the embodiment of the present application, as shown in fig. 17 and 18, a bulk acoustic wave resonator is provided, which includes a substrate 170, and a supporting layer 150, a first electrode 130, a piezoelectric layer 120, and a second electrode 180 sequentially stacked on the substrate 170, wherein the first electrode 130, the piezoelectric layer 120, and the second electrode 180 form a stacked structure, the piezoelectric layer 120 has a stress relief groove 121 penetrating the piezoelectric layer 120, and the second electrode 180 is disposed on a first surface of the piezoelectric layer 120 facing away from the substrate 170. In combination with the description of the foregoing embodiment, the piezoelectric layer 120 has the stress relief groove 121 penetrating the piezoelectric layer 120 before being transferred to the substrate 170, so that the stress relief groove 121 penetrating the piezoelectric layer 120 is etched on the piezoelectric layer 120 after high-temperature growth in time, so that the piezoelectric layer 120 can release internal stress through the stress relief groove 121, the problem of cracking possibly caused by excessive internal stress of the piezoelectric layer 120 is effectively avoided, and the electrode forming steps are all after the piezoelectric layer 120 in a substrate transfer manner, so that adverse effects on the electrode caused by the high-temperature growth environment of the piezoelectric layer 120 can be avoided. As shown in fig. 17 and 18, the first electrode 130 has an electrode extension 132 extending into the stress relief groove, the support layer 150 has a support extension 151 extending into the stress relief groove, and since the stress relief groove 121 is located outside the bulk acoustic wave resonator effective resonance region a, the electrode extension 132 and the support extension 151 are alternately arranged to form a first acoustic reflection structure located outside the effective resonance region, so that an acoustic wave can be reflected back into the effective resonance region from the lateral direction by the first acoustic reflection structure, thereby improving the Q value of the device. Therefore, no additional opening is needed when the first sound reflection structure is provided, and only the stress relief groove 121 needs to be fully utilized.
Alternatively, as shown in fig. 17 and 18, the stress relief groove 121 is located at the circumferential side of the effective resonance region of the bulk acoustic wave resonator, and the stress relief groove 121 has at least a part of the first opening 192 that is not filled, the first opening 192 may be obtained by releasing the second sacrificial layer 143 or the second sub-layer 142, and the first opening 192 is located just at the circumferential side of the effective resonance region, so that the circumferential side of the effective resonance region can be directly contacted with air within the first opening 192, thereby reflecting the transverse acoustic wave so that energy is concentrated at the effective resonance region, so as to increase the Q value of the device.
As shown in fig. 19, when the second sacrificial layer 143 is partially filled in the stress release groove 121, the second sacrificial layer 143 may extend to the first surface of the piezoelectric layer 120 through the stress release groove 121, so that, during final release, since the second sacrificial layer 143 is around the effective resonance area, the second sacrificial layer 143 may be exposed on the first surface, so that the second sacrificial layer 143 exposed on the first surface is conveniently and directly released, and a complex process of additionally providing a release hole and then releasing the second sacrificial layer 143 through the release hole is avoided.
Alternatively, as shown in fig. 15 to 18, a cavity 191 located below the effective resonance region may be further formed between the support layer 150 and the first electrode 130, the cavity 191 may communicate with the first opening 192, and the cavity 191 and the first opening 192 may be formed by release of the first sacrificial layer 140, for example: as shown in fig. 5 and 6, the first electrode 130 may be formed on the piezoelectric layer 120, then, as shown in fig. 7 and 8, the first sacrificial layer 140 is continuously deposited on the first electrode 130, and the first sacrificial layer 140 includes two continuous portions, that is, the first sacrificial layer 140 includes a first sub-layer 141 and a second sub-layer 142, the first sub-layer 141 is correspondingly located on a side surface of the first electrode 130 facing away from the piezoelectric layer 120 (the side surface is opposite to the first surface in a thickness direction, for convenience of understanding, hereinafter referred to as a second surface), and the second sub-layer 142 is continuously formed with the first sub-layer 141 and extends from the second surface of the piezoelectric layer 120 into the stress relief groove 121, thereby filling a part of the space in the stress relief groove 121, then, as shown in fig. 9 and 10, the support layer 150 is continuously deposited, the support layer 150 covers the upper surface of the device in fig. 8, and the support layer 150 may adaptively fill the remaining space in the stress relief groove 121, so as to have a good supporting effect. Then, the substrate transfer and the fabrication of the second electrode 180 are completed through S040 and S050. As shown in fig. 17 and 18, finally, by releasing the continuous second sub-layer 142 and the first sub-layer 141, the space originally filled by the second sub-layer 142 in the stress release groove 121 is empty to form the first opening 192, so that the space originally filled by the first sub-layer 141 between the support layer 150 and the first electrode 130 is empty to form the cavity 191, and since the first opening 192 is just located at the periphery side of the effective resonator, the periphery side of the effective resonator area can be directly contacted with air in the opening, thereby reflecting the transverse sound wave, and the cavity 191 is located below the effective resonator area, and can also reflect the sound wave, so that energy is concentrated in the effective resonator area, so as to improve the Q value of the device.
Further, as shown in fig. 7 and 8, when the second sub-layer 142 is partially filled in the stress release groove 121, the second sub-layer 142 may extend to the first surface of the piezoelectric layer 120 through the stress release groove 121, so, during final release, as shown in fig. 13 to 16, since the second sub-layer 142 is around the effective resonator area, the second sub-layer 142 may be exposed on the first surface, and the second sub-layer 142 exposed on the first surface and the first sub-layer 141 continuous with the second sub-layer 142 may be directly released, in other words, during release of the second sub-layer 142, the stress release groove 121 may be used to directly complete release of the second sub-layer 142 and the first sub-layer 141, thereby avoiding a complex process of additionally providing a release hole and then releasing the first sacrificial layer 140 through the release hole.
Alternatively, as shown in fig. 17 and 18, the first electrode 130 may be led out by means of a stress relief groove 121, for example: as shown in fig. 5 and 6, the first electrode 130 may include a continuous electrode body layer 131 and an electrode extension 132, wherein the electrode body layer 131 is located on the second surface of the piezoelectric layer 120, and the electrode extension 132 extends to the first surface of the piezoelectric layer 120 through the stress relief groove 121 after being continuous with the electrode body layer 131. Then, the substrate transfer and the fabrication of the second electrode 180 are completed through S040 and S050, the second electrode 180 may include an electrode lead-out portion 182 and a second electrode portion 181 which are spaced from each other, the second electrode portion 181 may be an upper electrode, the electrode body layer 131 may be a lower electrode, the two cooperate with the piezoelectric layer 120 to construct an effective resonance region, and the electrode lead-out portion 182 is in contact connection with the electrode extension portion 132 on the first surface, so as to facilitate the application of a driving voltage to the lower electrode. In this process, since the electrode extension 132 of the first electrode 130 is directly exposed on the first surface by using the stress relief groove 121, the complex process of additionally providing an electrode lead-out hole and then providing a metal layer in the electrode lead-out hole to lead out the lower electrode to the first surface is avoided, and the manufacturing of the electrode lead-out hole may have a series of adverse effects due to over etching, for example, because the over etching causes unexpected etching to the electrode, thereby reducing the reliability, so that the present embodiment can effectively avoid the occurrence of such adverse situations.
In addition, in order to reduce the resistance, as shown in fig. 17, the electrode extension 132 may be made to extend in the lateral direction such that the electrode extension 132 extends from one side wall to the opposite other side wall of the stress relieving groove 121, thereby providing a larger contact area, whereby the contact area is larger and the resistance is smaller when the electrode extension 132 is in contact with the electrode lead-out 182.
The stress relief groove 121 may likewise have various ways, such as a first ring shape, a mesh-like structure including the first ring shape, and the like, as described in the foregoing method example.
As shown in fig. 11 and 12, the bonding layer 160 includes a first bonding layer 161 and a second bonding layer 162 in order to improve the reliability of the device.
As shown in fig. 17, since the piezoelectric layer has the first openings 192 and the support layer 150 has the support extension portions 151, the first openings 192 and the support extension portions 151 may be alternately arranged to form a second sound reflection structure, and the second sound reflection structure is disposed on the outer side of the stacked structure, so that the transverse sound wave can be reflected, and energy is concentrated in the effective resonance region, so as to improve the Q value of the device.
As shown in fig. 21, the electrode extension 132 extending into the stress relief groove 121 may also be a stepped structure in order to enhance the ability to reflect sound waves.
As shown in fig. 22, a photonic crystal 220 may also be provided inside the support extension 151 extending into the stress relief groove 121 in order to regulate the propagation of sound waves.
As shown in fig. 23, the support extension 151 extending into the stress relief groove 121 may also be provided with at least one first protrusion 240 and/or first groove 230, the first protrusion 240 or first groove 230 being disposed along a longitudinal or transverse direction of the support extension 151. This can also improve the reflection effect on the transverse sound wave.
As shown in fig. 24, the first groove 230 longitudinally penetrates the support extension 151 to form the second opening 210, and the support extension 151, the second opening 210, and the electrode extension 132 form the third acoustic emission structure, whereby the reflection effect on the transverse sound wave can also be improved. In addition, air or phonon crystals may be filled in the second opening 210.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. The bulk acoustic wave resonator is characterized by comprising a substrate, a supporting layer, a first electrode, a piezoelectric layer and a second electrode, wherein the supporting layer, the first electrode, the piezoelectric layer and the second electrode are sequentially laminated on the substrate to form a stacked structure, the piezoelectric layer is provided with a stress release groove penetrating through the piezoelectric layer, the stress release groove is positioned on the outer side of the stacked structure, the first electrode is arranged on the piezoelectric layer, one end of the first electrode extends into the stress release groove to form an electrode extension part, the supporting layer is provided with a supporting extension part extending into the stress release groove, the electrode extension part and the supporting extension part are alternately arranged to form a first acoustic reflection structure, and the first acoustic reflection structure is arranged on the outer side of the stacked structure.
2. The bulk acoustic resonator of claim 1, wherein the piezoelectric layer forms a first opening, the first opening alternating with the support layer forming a second acoustic reflective structure, the second acoustic reflective structure being disposed outside the stacked structure.
3. The bulk acoustic resonator of claim 2, wherein a cavity is formed between the support layer and the first electrode, the cavity being in communication with the first opening.
4. The bulk acoustic wave resonator of claim 1, wherein the second electrode comprises an electrode lead-out portion and a second electrode portion disposed at a spacing, and the electrode extension of the first electrode is electrically connected to the electrode lead-out portion.
5. A bulk acoustic wave resonator as claimed in any one of claims 1 to 4, characterized in that at least one first protrusion and/or first recess is provided in the support extension, the first protrusion or first recess being arranged in a longitudinal or transverse direction of the support extension.
6. The bulk acoustic resonator of claim 5, wherein the first recess forms a second opening longitudinally through the support extension, the second opening, and the electrode extension forming a third acoustic emission structure.
7. The bulk acoustic wave resonator according to claim 6, wherein the second opening is filled with air or phonon crystals.
8. A method of making a bulk acoustic wave resonator, the method comprising:
forming a piezoelectric layer on a temporary substrate;
forming a stress relief groove penetrating through the piezoelectric layer on the piezoelectric layer, wherein the stress relief groove is positioned outside an effective resonance area of the bulk acoustic wave resonator;
sequentially forming a first electrode and a supporting layer on the piezoelectric layer, wherein the first electrode is provided with an electrode extension part extending into the stress release groove, the supporting layer is provided with a supporting extension part extending into the stress release groove, and the electrode extension parts and the supporting extension parts are alternately arranged to form a first sound reflection structure;
transferring one side of the support layer, which is away from the temporary substrate, to a base, and removing the temporary substrate to expose a first surface of the piezoelectric layer, which is away from the base;
a second electrode is disposed on the first surface of the piezoelectric layer.
9. The method of manufacturing a bulk acoustic wave resonator according to claim 8, wherein sequentially forming a first electrode and a support layer on the piezoelectric layer comprises:
forming a first electrode on the piezoelectric layer, wherein the first electrode has an electrode extension that extends into the stress relief groove;
forming a first sacrificial layer on the first electrode, wherein the first sacrificial layer is positioned on one side surface of the first electrode, which is away from the piezoelectric layer, and one end of the first sacrificial layer extends into the stress release groove and is exposed on the first surface, the first sacrificial layer is used for releasing and forming a first opening and a cavity which are communicated with each other, the first opening is exposed on the first surface, and the cavity is positioned between the supporting layer and the first electrode;
the support layer is formed over the piezoelectric layer overlying the first electrode and the first sacrificial layer, wherein the support layer has support extensions that extend into the stress relief slots.
10. The method of manufacturing a bulk acoustic wave resonator according to claim 8 or 9, wherein the second electrode comprises an electrode lead-out portion and a second electrode portion spaced apart from each other, and the electrode extension portion of the first electrode extends to the first surface through the stress relief groove and is electrically connected to the electrode lead-out portion.
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