CN216531264U - Film bulk acoustic resonator and filter - Google Patents
Film bulk acoustic resonator and filter Download PDFInfo
- Publication number
- CN216531264U CN216531264U CN202123113547.7U CN202123113547U CN216531264U CN 216531264 U CN216531264 U CN 216531264U CN 202123113547 U CN202123113547 U CN 202123113547U CN 216531264 U CN216531264 U CN 216531264U
- Authority
- CN
- China
- Prior art keywords
- bulk acoustic
- acoustic resonator
- layer
- film bulk
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 230000000149 penetrating effect Effects 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 73
- 239000010409 thin film Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 25
- 238000000605 extraction Methods 0.000 claims description 24
- 238000005538 encapsulation Methods 0.000 claims description 18
- 238000002161 passivation Methods 0.000 claims description 16
- 238000004806 packaging method and process Methods 0.000 claims description 11
- 229920006280 packaging film Polymers 0.000 claims description 8
- 239000012785 packaging film Substances 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Images
Abstract
A film bulk acoustic resonator and a filter relate to the technical field of resonators. The film bulk acoustic resonator comprises a substrate with a cavity, a bottom electrode positioned on the substrate, a piezoelectric layer positioned on the bottom electrode, and a top electrode positioned on the piezoelectric layer, wherein the bottom electrode is led out to one side of the piezoelectric layer close to the top electrode through lead-out metal arranged in the piezoelectric layer in a penetrating manner; the substrate comprises a body, an annular protection wall positioned on the body and an insulating layer arranged around the periphery of the annular protection wall, wherein a cavity is formed in an area positioned inside the annular protection wall. The film bulk acoustic resonator is provided with the annular protection wall, so that the insulating layer can be prevented from being excessively corroded, the surface of the substrate can be conveniently polished, and the performance and yield of the device are improved.
Description
Technical Field
The utility model relates to the technical field of resonators, in particular to a film bulk acoustic resonator and a filter.
Background
With the rapid development of mobile communication technology, the market demand for high-band resonators and filters is increasing. Compared with the traditional microwave ceramic resonator and surface acoustic wave resonator, the Film Bulk Acoustic Resonator (FBAR) has the advantages of small volume, low loss, high quality factor, large power capacity, high resonant frequency and the like, so that the FBAR has wide application prospect in the related fields, particularly in the aspect of high-frequency communication, and becomes a hot research in the industry and academia.
At present, a film bulk acoustic resonator is generally formed with a groove for filling a sacrificial material on a substrate, and a bottom electrode, a piezoelectric layer, and the like are formed thereon after the sacrificial material is filled and then subjected to grinding and polishing processes. However, when the sacrificial layer is polished on the whole substrate surface of the existing film bulk acoustic resonator, the process is more complicated in the polishing process because the substrate of the non-resonance region is wider; and because the sacrificial layer in the groove is thicker, residual stress is easily formed in the coating process, the complexity of the substrate surface polishing process can be further deepened, and the yield of the device is influenced.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a film bulk acoustic resonator, which can avoid an insulating layer from being excessively corroded and can conveniently polish the surface of a substrate due to the arrangement of an annular protection wall, thereby improving the performance and yield of a device.
The embodiment of the utility model is realized by the following steps:
in one aspect of the present invention, a film bulk acoustic resonator is provided, which includes a substrate having a cavity, a bottom electrode on the substrate, a piezoelectric layer on the bottom electrode, and a top electrode on the piezoelectric layer, wherein the bottom electrode is led out to a side of the piezoelectric layer close to the top electrode through a lead-out metal penetrating through the piezoelectric layer; the substrate comprises a body, an annular protection wall positioned on the body and an insulating layer arranged around the periphery of the annular protection wall, wherein a cavity is formed in the area positioned inside the annular protection wall. The film bulk acoustic resonator is provided with the annular protection wall, so that the insulating layer can be prevented from being excessively corroded, the surface of the substrate can be conveniently polished, and the performance and yield of the device are improved.
Optionally, the film bulk acoustic resonator further includes a packaging film layer located on the top electrode, the packaging film layer has a packaging cavity for packaging the film bulk acoustic resonator, and the packaging cavity is located above the resonance region of the film bulk acoustic resonator; wherein the overlapping areas of the cavity, the bottom electrode, the piezoelectric layer and the top electrode form a resonance area; the film bulk acoustic resonator also comprises a first extraction electrode and a second extraction electrode which penetrate through the packaging film layer, the first extraction electrode is in contact connection with the extraction metal, and the second extraction electrode is in contact connection with the top electrode.
Optionally, the encapsulation thin film layer includes a first sub thin film layer, a second sub thin film layer and a third sub thin film layer sequentially disposed on the top electrode.
Optionally, the materials of the first sub-film layer and the second sub-film layer are different.
Optionally, the film bulk acoustic resonator further includes a passivation layer located between the top electrode and the encapsulation thin film layer, the first extraction electrode sequentially penetrates through the encapsulation thin film layer and the passivation layer to be in contact connection with the extraction metal, and the second extraction electrode sequentially penetrates through the encapsulation thin film layer and the passivation layer to be in contact connection with the top electrode.
Optionally, the material of the passivation layer is aluminum nitride.
Optionally, in a resonance region of the film bulk acoustic resonator, the shape of an outline of orthogonal projections of the top electrode and the bottom electrode on the substrate is a closed figure formed by enclosing M arcs and N straight-line segments, M is an integer greater than or equal to 1, N is an integer greater than or equal to 0, and overlapping regions of the cavity, the bottom electrode, the piezoelectric layer and the top electrode form the resonance region.
Optionally, in the resonance region of the film bulk acoustic resonator, the outline shape of the orthographic projection of the piezoelectric layer on the substrate is also a closed pattern formed by enclosing M arcs and N straight-line segments.
Optionally, the material of the bottom electrode and the top electrode is any one of molybdenum, aluminum, platinum, silver, tungsten and gold, respectively.
In another aspect of the present invention, a filter is provided, and the filter includes the film bulk acoustic resonator.
The beneficial effects of the utility model include:
the film bulk acoustic resonator comprises a substrate with a cavity, a bottom electrode positioned on the substrate, a piezoelectric layer positioned on the bottom electrode, and a top electrode positioned on the piezoelectric layer, wherein the bottom electrode is led out to one side of the piezoelectric layer close to the top electrode through lead-out metal arranged in the piezoelectric layer in a penetrating mode; the substrate comprises a body, an annular protection wall positioned on the body and an insulating layer arranged around the periphery of the annular protection wall, wherein a cavity is formed in the area positioned inside the annular protection wall. The film bulk acoustic resonator is provided with the annular protection wall and the insulating layer, so that on one hand, the acoustic wave can be limited in a resonance region through the annular protection wall, the transverse leakage of the acoustic wave is avoided, and the quality factor of the film bulk acoustic resonator is improved; on the other hand, the release of the sacrificial material in the substrate can be positioned through the annular protection wall, so that the release of the sacrificial layer is facilitated, and the insulating layer can be prevented from being excessively corroded; in another aspect, the insulating layer and the annular protective wall are arranged to facilitate polishing of the surface of the substrate, so that the influence of residual stress on the substrate polishing process is reduced, and the yield and quality of the device are improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a film bulk acoustic resonator according to some embodiments of the present invention;
FIG. 2 is a second schematic structural diagram of a film bulk acoustic resonator according to some embodiments of the present invention;
fig. 3 is a third schematic structural diagram of a film bulk acoustic resonator according to some embodiments of the present invention;
fig. 4 is a schematic structural diagram of a filter according to some embodiments of the present invention.
Icon: 10-a substrate; 11-a cavity; 12-a body; 13-ring-shaped protection walls; d-thickness of the annular protection wall; 14-an insulating layer; 15-a sacrificial material; 20-a bottom electrode; 30-a piezoelectric layer; 40-a top electrode; 50-extraction of metal; 60-packaging the film layer; 61-a first sub-film layer; 62-a second sub-film layer; 63-a third sub-film layer; 64-a package cavity; 71-a first extraction electrode; 72-a second extraction electrode; 80-a passivation layer; 91-a first signal terminal; 92-a second signal terminal; 93-ground.
Detailed Description
The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the utility model and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the utility model and the accompanying claims.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending" onto "another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there are no intervening elements present. Also, it will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending over" another element, it can be directly on or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly over" another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.
Relative terms such as "below …" or "above …" or "upper" or "lower" or "horizontal" or "vertical" may be used herein to describe one element, layer or region's relationship to another element, layer or region as illustrated in the figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the figures.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Referring to fig. 1 and fig. 2, the present embodiment provides a film bulk acoustic resonator, which includes a substrate 10 having a cavity 11, a bottom electrode 20 located on the substrate 10, a piezoelectric layer 30 located on the bottom electrode 20, and a top electrode 40 located on the piezoelectric layer 30, where the bottom electrode 20 is led out to a side of the piezoelectric layer 30 close to the top electrode 40 through a metal lead 50 penetrating through the piezoelectric layer 30; the substrate 10 includes a body 12, a ring-shaped protection wall 13 on the body 12, and an insulating layer 14 surrounding the outer periphery of the ring-shaped protection wall 13, wherein a region inside the ring-shaped protection wall 13 forms a cavity 11. The film bulk acoustic resonator is provided with the annular protection wall 13, so that the insulating layer 14 can be prevented from being excessively corroded, the polishing process of the surface of the substrate 10 can be simplified, and the performance and yield of devices can be improved.
It should be noted that the cavity 11 on the substrate 10 is formed by releasing the sacrificial material 15, which is well known to those skilled in the art, and therefore, the detailed description thereof is omitted here.
The bottom electrode 20, the piezoelectric layer 30, and the top electrode 40 are sequentially formed on the substrate 10. Wherein the overlapping area of the cavity 11, the bottom electrode 20, the piezoelectric layer 30 and the top electrode 40 in the stacking direction thereof (i.e., the stacking direction of the bottom electrode 20, the piezoelectric layer 30 and the top electrode 40) forms a resonance area; the region outside the resonance region is a non-resonance region.
In the present embodiment, the bottom electrode 20 is extracted from the piezoelectric layer 30 to the side of the top electrode 40 through the extraction metal 50. Wherein the extraction metal 50 is located in the non-resonant region of the film bulk acoustic resonator. The material of the metal lead-out 50 is not limited in this application, and those skilled in the art can select a suitable metal material as needed.
Referring to fig. 1, in the present embodiment, a substrate 10 includes a body 12, an annular protection wall 13 on the body 12, and an insulating layer 14 surrounding the annular protection wall 13. The annular protection wall 13 and the body 12 are made of the same material, and the annular protection wall 13 and the body 12 are obtained by etching the substrate 10. The space inside the annular protection wall 13 forms the cavity 11 of the substrate 10, and the space outside the annular protection wall 13 is used to form the insulating layer 14, so that the insulating layer 14 is provided around the periphery of the annular protection wall 13. By arranging the annular protection wall 13, on one hand, the sound waves can be limited in a resonance region, so that the sound waves are prevented from leaking transversely, and the quality factor of the film bulk acoustic resonator is improved; on the other hand, the annular protection wall 13 can play a positioning role in releasing the sacrificial material 15 in the substrate 10, so that the sacrificial layer is conveniently released, and can play a role in preventing the insulating layer 14 from being excessively corroded; on the other hand, since the sacrificial layer located in the substrate 10 is thick (the cavity 11 in the substrate 10 is obtained by releasing the sacrificial layer formed in advance in the substrate 10), the prior art resonator is prone to generate residual stress during the process of forming the sacrificial layer, thereby affecting the polishing and releasing of the subsequent sacrificial layer. The arrangement of the insulating layer 14 and the annular protective wall 13 can facilitate the polishing of the sacrificial material 15 of the substrate 10, reduce the influence of residual stress on the polishing process of the substrate 10, and further improve the yield and quality of devices.
The thickness d of the annular protection wall, as shown in fig. 1, can be determined by a person skilled in the art according to actual conditions, and the application is not particularly limited. Illustratively, the thickness d of the annular protection wall should be less than the diameter of the cavity 11, and the thickness d of the annular protection wall should be less than the difference between the outer diameter of the insulating layer 14 and the inner diameter of the insulating layer 14.
In summary, the film bulk acoustic resonator provided by the present application includes a substrate 10 having a cavity 11, a bottom electrode 20 located on the substrate 10, a piezoelectric layer 30 located on the bottom electrode 20, and a top electrode 40 located on the piezoelectric layer 30, where the bottom electrode 20 is led out to a side of the piezoelectric layer 30 close to the top electrode 40 through a lead-out metal 50 disposed in the piezoelectric layer 30; the substrate 10 includes a body 12, a ring-shaped protection wall 13 on the body 12, and an insulating layer 14 surrounding the outer periphery of the ring-shaped protection wall 13, wherein a region inside the ring-shaped protection wall 13 forms a cavity 11. The film bulk acoustic resonator is provided with the annular protection wall 13 and the insulating layer 14, so that on one hand, the acoustic waves can be limited in a resonance region through the annular protection wall 13, thereby preventing the acoustic waves from leaking transversely and further improving the quality factor of the film bulk acoustic resonator; on the other hand, the release of the sacrificial material 15 in the substrate 10 can be positioned through the annular protection wall 13, so that the release of the sacrificial layer is facilitated, and the insulating layer 14 can be prevented from being excessively corroded; in another aspect, the insulating layer 14 and the annular protection wall 13 are disposed to facilitate polishing the surface of the substrate 10, so as to reduce the influence of residual stress on the polishing process of the substrate 10, thereby improving the yield and quality of the device.
Referring to fig. 2, optionally, the film bulk acoustic resonator provided in this embodiment further includes a packaging film layer 60 located on the top electrode 40, where the packaging film layer 60 has a packaging cavity 64 for packaging the film bulk acoustic resonator, and the packaging cavity 64 is located above the resonance region of the film bulk acoustic resonator; wherein the overlapping areas of the cavity 11, the bottom electrode 20, the piezoelectric layer 30 and the top electrode 40 form a resonance area; the film bulk acoustic resonator further includes a first extraction electrode 71 and a second extraction electrode 72 penetrating the encapsulation film layer 60, the first extraction electrode 71 is in contact connection with the extraction metal 50, and the second extraction electrode 72 is in contact connection with the top electrode 40.
Wherein the encapsulation film layer 60 is located above the film bulk acoustic resonator and the encapsulation cavity 64 is located above the resonance region of the film bulk acoustic resonator, as shown in fig. 2. It should be noted that, in the present application, each thin film bulk acoustic resonator in the filter is independently packaged, so that the packaging area of the whole thin film package of the filter can be effectively reduced, the deformation is small, and the mechanical strength of the device can be improved.
Illustratively, the encapsulation thin film layer 60 may include a first sub thin film layer 61, a second sub thin film layer 62, and a third sub thin film layer 63 sequentially disposed on the top electrode 40. This application adopts three layers of sub-thin film layer, and this kind of encapsulation mode leakproofness is good, combines the independent encapsulation of syntonizer simultaneously, can seal the resonance region effectively. Of course, in other embodiments, the skilled person may also set the encapsulation film layer 60 to include two sub-film layers or four sub-film layers according to the requirement, and in particular, the present application is not limited.
Optionally, the materials of the first sub-thin film layer 61 and the second sub-thin film layer 62 are different. In the present embodiment, the material of the first sub-thin film layer 61 is the same as the material of the substrate 10, and the material of the second sub-thin film layer 62 is the same as the material of the sacrificial layer filled in the substrate 10 before the cavity 11 is formed.
Referring to fig. 3, in one possible embodiment, the film bulk acoustic resonator further includes a passivation layer 80 disposed between the top electrode 40 and the encapsulation film layer 60, the first extraction electrode 71 sequentially penetrates through the encapsulation film layer 60 and the passivation layer 80 to be in contact connection with the extraction metal 50, and the second extraction electrode 72 sequentially penetrates through the encapsulation film layer 60 and the passivation layer 80 to be in contact connection with the top electrode 40. The surface of the top electrode 40 can be effectively protected by the passivation layer 80. Optionally, the material of the passivation layer 80 is aluminum nitride. Of course, in addition to aluminum nitride, one skilled in the art can select other feasible materials according to the function of the passivation layer 80, and the specific material type of the passivation layer 80 is not particularly limited in the present application.
Referring to fig. 4, alternatively, in the resonance region of the film bulk acoustic resonator, the orthogonal projections of the top electrode 40 and the bottom electrode 20 on the substrate 10 respectively have a shape of a closed figure surrounded by M arcs and N straight lines, where M is an integer greater than or equal to 1, and N is an integer greater than or equal to 0, and the overlapping regions of the cavity 11, the bottom electrode 20, the piezoelectric layer 30, and the top electrode 40 form the resonance region. The curvature of the arc line and the connection angle between the arc line and the straight line can also be determined according to the requirement.
The specific number of M and N may be determined according to the requirement, and the application is not particularly limited. Illustratively, M is an integer greater than or equal to 1, and N is equal to 0, so that the outline shape of the orthographic projection of the top electrode 40 and the bottom electrode 20 on the substrate 10 is a closed figure composed of full arcs; alternatively, M is an integer greater than or equal to 1, and N is an integer greater than 0, so that the shape of the outline of the orthographic projection of the top electrode 40 and the bottom electrode 20 on the substrate 10 is a closed figure consisting of an arc line and a straight line segment, respectively, as shown in fig. 4. The stress generated in the manufacturing process is changed by setting the outline shapes of the orthographic projections of the top electrode 40 and the bottom electrode 20 on the substrate 10 respectively and selecting the number of the straight line segments which are suitable to be connected with the arcs and the connection angles of the arcs and the straight line segments according to requirements. The top electrode 40 and the bottom electrode 20 are designed into a closed graph formed by enclosing M arc lines and N straight line segments according to the outline shape of orthographic projections of the substrate 10, the reflection waves can be reduced, unnecessary sound wave vibration modes are offset, clutter resonance peaks are reduced, pseudo modes are reduced, and therefore a pure main mode with a large electromechanical coupling coefficient is obtained.
In the present embodiment, in the resonance region of the film bulk acoustic resonator, the outline shape of the orthographic projection of the piezoelectric layer 30 on the substrate 10 is also a closed pattern formed by enclosing M arcs and N straight-line segments. Wherein, the outline shape of the orthographic projection of the piezoelectric layer 30 on the substrate 10 can be the same as or similar to the outline shape of the orthographic projection of the top electrode 40 and the bottom electrode 20 on the substrate 10 respectively.
Also, the material of the bottom electrode 20 and the top electrode 40 of the thin film bulk acoustic resonator provided by the present application may be any one of molybdenum, aluminum, platinum, silver, tungsten, and gold.
In another aspect of the present invention, a filter is also provided, and the filter includes the film bulk acoustic resonator. The specific structure and the beneficial effects of the film bulk acoustic resonator have been described in detail in the foregoing, and thus are not described herein again.
It should be noted that the filter may be constructed by two or more film bulk acoustic resonators, and since the construction method of the film bulk acoustic resonator and the filter is well known to those skilled in the art, the details of the present application are not repeated herein.
Illustratively, referring to fig. 4, the filter may be constructed by five resonators, wherein three resonators are connected in series between the first signal terminal 91 and the second signal terminal 92, and the other two resonators are connected in parallel between the series-connected resonators and the ground terminal 93. Of course, it should be understood that the filter shown in fig. 4 is only one example given in the present application, and should not be considered as the only limitation to the form of construction of the filter of the present application.
The above description is only an alternative embodiment of the present invention and is not intended to limit the present invention, and various modifications and variations of the present invention may occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the utility model is not described in any way for the possible combinations in order to avoid unnecessary repetition.
Claims (10)
1. A film bulk acoustic resonator is characterized by comprising a substrate with a cavity, a bottom electrode positioned on the substrate, a piezoelectric layer positioned on the bottom electrode, and a top electrode positioned on the piezoelectric layer, wherein the bottom electrode is led out to one side of the piezoelectric layer close to the top electrode through a lead-out metal arranged in the piezoelectric layer in a penetrating mode;
the substrate comprises a body, an annular protection wall positioned on the body and an insulating layer arranged around the periphery of the annular protection wall, wherein the cavity is formed in the area positioned inside the annular protection wall.
2. The film bulk acoustic resonator of claim 1, further comprising a packaging film layer on the top electrode, the packaging film layer having a packaging cavity for packaging the film bulk acoustic resonator, the packaging cavity being located above a resonance region of the film bulk acoustic resonator; wherein an overlapping area of the cavity, the bottom electrode, the piezoelectric layer, and the top electrode forms the resonance region; the film bulk acoustic resonator further comprises a first lead-out electrode and a second lead-out electrode which penetrate through the packaging film layer, the first lead-out electrode is in contact connection with the lead-out metal, and the second lead-out electrode is in contact connection with the top electrode.
3. The film bulk acoustic resonator of claim 2, wherein the encapsulation film layer comprises a first sub-film layer, a second sub-film layer, and a third sub-film layer sequentially disposed on the top electrode.
4. The thin film bulk acoustic resonator of claim 3, wherein the first sub thin film layer and the second sub thin film layer are of different materials.
5. The film bulk acoustic resonator of claim 2, further comprising a passivation layer between the top electrode and the encapsulation thin film layer, wherein the first extraction electrode sequentially penetrates through the encapsulation thin film layer and the passivation layer to be in contact connection with the extraction metal, and wherein the second extraction electrode sequentially penetrates through the encapsulation thin film layer and the passivation layer to be in contact connection with the top electrode.
6. The film bulk acoustic resonator of claim 5, wherein the material of the passivation layer is aluminum nitride.
7. The film bulk acoustic resonator according to claim 1, wherein in a resonance region of the film bulk acoustic resonator, orthographic projections of the top electrode and the bottom electrode on the substrate respectively have a contour shape of a closed figure formed by enclosing M arcs and N straight lines, wherein M is an integer greater than or equal to 1, and N is an integer greater than or equal to 0, and overlapping regions of the cavity, the bottom electrode, the piezoelectric layer and the top electrode form the resonance region.
8. The film bulk acoustic resonator according to claim 7, wherein in the resonance region of the film bulk acoustic resonator, the orthographic projection of the piezoelectric layer on the substrate is also shaped into a closed pattern formed by enclosing M arcs and N straight-line segments.
9. The film bulk acoustic resonator according to claim 1, wherein the material of the bottom electrode and the top electrode is any one of molybdenum, aluminum, platinum, silver, tungsten, and gold, respectively.
10. A filter comprising a thin film bulk acoustic resonator according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123113547.7U CN216531264U (en) | 2021-12-10 | 2021-12-10 | Film bulk acoustic resonator and filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123113547.7U CN216531264U (en) | 2021-12-10 | 2021-12-10 | Film bulk acoustic resonator and filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216531264U true CN216531264U (en) | 2022-05-13 |
Family
ID=81468194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202123113547.7U Active CN216531264U (en) | 2021-12-10 | 2021-12-10 | Film bulk acoustic resonator and filter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216531264U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115498975A (en) * | 2022-11-16 | 2022-12-20 | 迈感微电子(上海)有限公司 | Film bulk acoustic resonator and filter |
| CN115589212A (en) * | 2022-12-12 | 2023-01-10 | 成都频岢微电子有限公司 | Bulk acoustic wave resonator with thin film package, manufacturing method and filter |
| CN117200741A (en) * | 2023-09-14 | 2023-12-08 | 武汉敏声新技术有限公司 | Bulk acoustic wave resonance component and preparation method thereof |
| CN117375568A (en) * | 2023-12-07 | 2024-01-09 | 常州承芯半导体有限公司 | Bulk acoustic wave resonator device and method for forming bulk acoustic wave resonator device |
| WO2024027735A1 (en) * | 2022-08-05 | 2024-02-08 | 天津大学 | Quartz resonator with external connecting portions arranged on end faces of package bases, and manufacturing method for quartz resonator, and electronic device |
-
2021
- 2021-12-10 CN CN202123113547.7U patent/CN216531264U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024027735A1 (en) * | 2022-08-05 | 2024-02-08 | 天津大学 | Quartz resonator with external connecting portions arranged on end faces of package bases, and manufacturing method for quartz resonator, and electronic device |
| CN115498975A (en) * | 2022-11-16 | 2022-12-20 | 迈感微电子(上海)有限公司 | Film bulk acoustic resonator and filter |
| CN115589212A (en) * | 2022-12-12 | 2023-01-10 | 成都频岢微电子有限公司 | Bulk acoustic wave resonator with thin film package, manufacturing method and filter |
| CN115589212B (en) * | 2022-12-12 | 2023-04-11 | 成都频岢微电子有限公司 | Bulk acoustic wave resonator with thin film package, manufacturing method and filter |
| CN117200741A (en) * | 2023-09-14 | 2023-12-08 | 武汉敏声新技术有限公司 | Bulk acoustic wave resonance component and preparation method thereof |
| CN117200741B (en) * | 2023-09-14 | 2024-04-16 | 武汉敏声新技术有限公司 | Bulk acoustic wave resonance component and preparation method thereof |
| CN117375568A (en) * | 2023-12-07 | 2024-01-09 | 常州承芯半导体有限公司 | Bulk acoustic wave resonator device and method for forming bulk acoustic wave resonator device |
| CN117375568B (en) * | 2023-12-07 | 2024-03-12 | 常州承芯半导体有限公司 | Bulk acoustic wave resonator device and method for forming bulk acoustic wave resonator device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN216531264U (en) | Film bulk acoustic resonator and filter | |
| CN111669141B (en) | Electrode structure of bulk acoustic wave resonator and manufacturing process | |
| EP4068628A1 (en) | Bulk acoustic resonator with electrode having void layer, and filter and electronic device | |
| CN109546985A (en) | Bulk acoustic wave resonator and its manufacturing method | |
| CN111162746B (en) | Flat piezoelectric layer structure of bulk acoustic wave resonator and manufacturing process | |
| JP7256929B2 (en) | Solid-state assembled resonator with electromagnetic shield structure and manufacturing process | |
| US10298201B2 (en) | Bulk acoustic wave resonator and method for manufacturing the same | |
| CN111934643B (en) | Bulk acoustic wave resonator with mass loads arranged on two sides of piezoelectric layer, filter and electronic equipment | |
| CN111211757A (en) | Top electrode structure of bulk acoustic wave resonator and manufacturing process | |
| CN111262540A (en) | Bulk acoustic wave resonator, method of manufacturing the same, filter, and electronic apparatus | |
| CN114499451B (en) | Bulk acoustic wave resonance device, forming method thereof, filter device and radio frequency front-end device | |
| CN111817682A (en) | Film bulk acoustic resonator and preparation method thereof | |
| CN109150127A (en) | Thin film bulk acoustic wave resonator and preparation method thereof, filter | |
| CN111010128A (en) | Resonator with ring structure, filter and electronic equipment | |
| CN216390944U (en) | Piezoelectric resonator | |
| CN111404508A (en) | Film bulk acoustic resonator with double-layer pentagonal electrode | |
| WO2022000809A1 (en) | Resonator and method for making same | |
| CN114362717B (en) | Film bulk acoustic resonator and preparation method thereof | |
| CN111030633A (en) | Bulk acoustic wave resonator, bulk acoustic wave resonator group, filter, and electronic device | |
| CN110957989A (en) | Film bulk acoustic resonator and manufacturing method thereof | |
| WO2023036026A1 (en) | Bulk acoustic wave resonance device, filter device, and radio frequency front-end device | |
| US20210105001A1 (en) | Resonator and semiconductor device | |
| CN111245387A (en) | Structure and manufacturing process of solid assembled resonator | |
| CN212381184U (en) | Film bulk acoustic resonator with double-layer pentagonal electrode | |
| CN212305272U (en) | Film bulk acoustic resonator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |