CN116632477A - Frequency and bandwidth reconfigurable duplexer based on SISL structure - Google Patents
Frequency and bandwidth reconfigurable duplexer based on SISL structure Download PDFInfo
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- CN116632477A CN116632477A CN202310270788.7A CN202310270788A CN116632477A CN 116632477 A CN116632477 A CN 116632477A CN 202310270788 A CN202310270788 A CN 202310270788A CN 116632477 A CN116632477 A CN 116632477A
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- 239000000758 substrate Substances 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 19
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- 238000004806 packaging method and process Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 3
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention belongs to the technical field of microwave devices, and particularly provides a frequency and bandwidth reconfigurable duplexer based on a SISL structure, which is used for filling the research blank of the prior art. The invention adopts SISL technology to realize miniaturization and self-packaging of the integral structure, adopts a two-step ladder impedance hybrid coupling resonator loaded with a variable capacitor in each channel of the reconfigurable three-duplexer resonant circuit, realizes resonant frequency adjustment through a frequency adjustment variable capacitor loaded at a neighbor short-circuit end, and realizes bandwidth adjustment through a bandwidth adjustment variable capacitor loaded between the two-step resonators; therefore, the frequency and bandwidth reconfigurable duplexer based on SISL provided by the invention can realize simultaneous adjustment by a simple structure and a high-efficiency method, has a wider center frequency adjustable range due to the bandwidth adjustable characteristic, and has a certain guiding significance for the research of other low-loss self-shielding duplexers and multiplexers.
Description
Technical Field
The invention belongs to the technical field of microwave devices, and particularly provides a frequency and bandwidth reconfigurable duplexer based on a SISL structure.
Background
The main function of the duplexer is to divide a broadband input signal into two paths of narrowband signals for output, which plays an extremely important role in frequency division in mobile communication. Along with the rapid development of mobile communication systems, miniaturization and reconfigurable functions are mainstream trend of multiplexer development, and the existing reconfigurable diplexer mostly adopts a microstrip open structure, so that radiation loss cannot be effectively reduced and electromagnetic interference can be generated to other circuit modules in the circuit system. At present, only a small amount of research results are disclosed for the duplexer with reconfigurable frequency and bandwidth, but the research on the reconfigurable device based on the SISL self-packaging structure is also very small, and the research on the reconfigurable duplexer of the SISL structure is almost blank.
Disclosure of Invention
The invention aims to provide a frequency and bandwidth reconfigurable duplexer based on a SISL self-packaging structure, which is used for filling the research blank of the prior art. The invention adopts SISL technology to realize miniaturization and self-packaging of the integral structure, adopts a two-step ladder impedance hybrid coupling resonator loaded with a variable capacitor in each channel of the reconfigurable three-duplexer resonant circuit, realizes resonant frequency adjustment through a frequency adjustment variable capacitor loaded at a neighbor short-circuit end, and realizes bandwidth adjustment through a bandwidth adjustment variable capacitor loaded between the two-step resonators; therefore, the frequency and bandwidth reconfigurable duplexer based on SISL provided by the invention can realize simultaneous adjustment by a simple structure and a high-efficiency method, has a wider center frequency adjustable range due to the bandwidth adjustable characteristic, and has a certain guiding significance for the research of other low-loss self-shielding duplexers and multiplexers.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a frequency and bandwidth reconfigurable microwave duplexer based on a SISL structure, comprising: 5-1 of five layers of dielectric substrates which are sequentially stacked from bottom to top; the method is characterized in that:
each layer of dielectric substrate adopts a double-layer plate, rectangular windows with the same size are correspondingly formed on the same positions of the second dielectric substrate 2 and the fourth dielectric substrate 4, the rectangular windows penetrate through the dielectric substrate and the upper and lower metal layers thereof, and air cavities are formed on the upper and lower surfaces of the third dielectric substrate; etching the upper metal layer of the third dielectric substrate opposite to the air cavity to form a reconfigurable three-duplexer resonant circuit, and forming a rectangular window opposite to the air cavity by the lower metal layer of the third dielectric substrate;
the reconfigurable triplexer resonant circuit includes: an input total feeder port 3-1, a first output feeder port 3-2, a second output feeder port 3-3, a first tunable filter 3-4, and a second tunable filter 3-5; the first adjustable channel is formed by the input total feeder port, the first adjustable filter and the first output feeder port, and the second adjustable channel is formed by the input total feeder port, the second adjustable filter and the second output feeder port; the input total feeder port is directly connected with the first adjustable filter and the second adjustable filter for feeding, and the first adjustable filter and the second adjustable filter are respectively and directly connected with the corresponding output feeder port.
Further, the first adjustable channel has a working frequency f 1 The working frequency of the second adjustable channel is f 2 The two satisfy the relation: f (f) 1 <f 2 。
Further, the first tunable filter 3-4 and the second tunable filter 3-5 respectively include: the two-step ladder impedance hybrid coupling resonator comprises 2 frequency adjustment variable capacitors 3-6, 2 bandwidth adjustment variable capacitors 3-7 and 4 blocking capacitors 3-8; in the two-step ladder impedance hybrid coupled resonator, one end of a high-impedance line of each step resonator is grounded and short-circuited, and a frequency adjustment variable capacitor is loaded at a neighboring short-circuited end, 2 bandwidth adjustment variable capacitors are serially connected and then loaded between low-impedance lines of the two-step resonator, and blocking capacitors are respectively loaded between the bandwidth adjustment variable capacitor and the hybrid coupled resonator, and a signal input port and an output port of the hybrid coupled resonator.
Furthermore, the variable capacitors are all varactors, the grounding end of the frequency adjustment variable capacitor is grounded together with the short-circuited end of the high-impedance line, and the grounding end of the bandwidth adjustment variable capacitor is connected with a large resistor in series and then grounded.
Furthermore, in the first adjustable filter and the second adjustable filter, the bias circuit of each variable capacitor adopts a mode of loading a large resistor and externally connecting a direct current voltage stabilizing source.
Furthermore, in each adjustable channel, the resonant frequency is adjusted by controlling the magnitude of the reverse bias voltage of the frequency adjustment variable capacitance capacitor, and the bandwidth is adjusted by controlling the magnitude of the reverse bias voltage of the bandwidth adjustment variable capacitance capacitor.
It should be noted that:
in the invention, the bias circuit of each variable capacitor adopts a mode of loading a resistor and externally connecting a power supply, and the bias circuit is simple in design and is beneficial to being welded on a microstrip substrate; the resistance value of the resistor is usually larger, so that leakage of microwave signals is reduced, and leakage of direct current signals to a microwave channel is prevented by correspondingly adding a blocking capacitor; in the two adjustable filters, the bias circuits of the two bandwidth adjustment variable capacitors are arranged in the middle of the two bandwidth adjustment variable capacitors. In each adjustable channel, the bias voltage of the variable capacitance capacitor is adjusted by changing the frequency, and the junction capacitance is changed to change the equivalent length of the resonator immediately, so that the continuous and rapid adjustment of the resonant frequency is realized; by changing the bias voltage of the bandwidth-adjusting variable capacitance, the coupling coefficient between the resonators is changed immediately by changing the junction capacitance, and the reconfigurable characteristic of the bandwidth is realized.
In the invention, the first adjustable channel and the second adjustable channel adopt two-step ladder mixed impedance mixed electromagnetic coupling structures, the size of the resonator is smaller than that of other types under the same resonance frequency, and the whole model is miniaturized by folding the resonance structures.
In the invention, the input and output ports of the first adjustable channel and the second adjustable channel are fed in a mode of being directly connected with the resonator, and the design of the common connection port adopts a T-shaped matching structure, so that the design is convenient.
In the invention, in the first adjustable filter and the second adjustable filter, the blocking capacitance loaded between the bandwidth adjusting variable capacitance and the resonator is usually smaller in capacitance value; on one hand, the design of a varactor diode bias circuit among resonators is facilitated, and the effect of isolating direct-current voltage is mainly achieved; on the other hand, the equivalent coupling capacitance between the resonators is reduced, so that the channel has a wider range of bandwidth adjustment.
In terms of working principle:
from the comprehensive theory of the diplexer, the design of the diplexer is mainly attributed to the design of two parts, namely the design of the individual filters of the two channels on the one hand, and the matching design of the common connection port on the other hand, namely the multiplexer which combines the two filters together in a certain way and forms better characteristics; in addition, in addition to these two points, the design of the reconfigurable duplexer requires research into implementation methods of the reconfigurable function. The invention provides a frequency and bandwidth reconfigurable duplexer, which comprises two aspects of adjustability, and for a microstrip structure, the frequency or bandwidth can be adjusted mainly by loading a PIN diode or a varactor diode, wherein the loading PIN diode has two states of on and off, although different tuning states can be formed, the frequency and bandwidth can not be continuously adjusted, the center frequency or bandwidth required by a system can not be rapidly and accurately achieved, and the loading varactor diode can be rapidly and continuously adjusted, so that the working states are more; the present invention employs varactors. Secondly, the design key point of the single-channel filter is the selection of the type of the resonator, and in order to achieve miniaturization of the duplexer structure, the first adjustable channel and the second adjustable channel adopt two-order folding ladder impedance hybrid electromagnetic coupling resonators.
And loading microstrip thin lines near the short-circuited ends of the high-impedance lines of the two resonators to connect the two resonators to form a current loop, and generating magnetic coupling between the two resonators. Because the quarter-wave short-circuit resonator has the strongest electric field distribution at the open end, the gap between the low impedance of the two resonators generates electric coupling in the invention, and the electromagnetic hybrid coupling between the two resonators is realized.
To achieve the reconfigurability of channel bandwidth, note the expressionThe coupling coefficient between resonators is generally described in relation to the channel bandwidth, where FBW is the percent bandwidth of the filter, g i ,g i+1 Is the prototype value of the selected low-pass filter; therefore, the coupling coefficient between the resonators is in direct proportion to the bandwidth, so that the varactors can be loaded between the resonators, and the coupling coefficient can be changed by changing the bias voltage: when the bias voltage is increased, the junction capacitance of the varactor is reduced, so that the coupling coefficient is reduced, and the bandwidth is reduced; and when the bias voltage is reduced, the junction capacitance of the varactor is increased, and the coupling coefficient is increased to increase the bandwidth, so that the bandwidth of the channel can be controlled.
The characteristic of frequency reconfiguration means that the center frequency of each channel has a certain range of adjustable characteristic, and the adjusting method is that the equivalent length of the resonator is changed immediately by changing the bias voltage of the varactor loaded on the resonator and then the resonant frequency is changed.
For a matching connection at a common port, important parameters at each feed port, namely the quality factor, need to be focused on and inversely proportional to the relative bandwidth, there areChecking whether the quality factor meets the passband requirement according to the group delay extraction method, namely +.>In the invention, the common connection port adopts a directly connected feed mode with the first adjustable channel and the second adjustable channel and is coupled with the third adjustable channel for feed, so the common matching port mainly comprises the matching between the first adjustable channel and the second adjustable channel, and the adjustment is simple and the design is easy.
For the structure of the duplexer, unlike the traditional suspended microstrip line structure, a heavy metal cavity is required to be additionally loaded for packaging, the whole structure miniaturization and self-packaging of the duplexer are realized by adopting the SISL technology, and meanwhile, compared with the microstrip structure design of the traditional open electromagnetic environment, the metal walls of the 1 st layer and the 5 th layer of the SISL structure and the metal through holes on the periphery of each layer of dielectric substrate can form an equivalent metal cavity, so that the radiation loss of the duplexer is effectively reduced, and the insertion loss value is reduced; meanwhile, the electromagnetic shielding characteristic is provided, and no interference is generated to other circuit structures in the system.
In summary, the beneficial effects of the invention are as follows:
the invention provides a microwave duplexer with reconfigurable center frequency and bandwidth based on a SISL structure, which can realize continuous and rapid adjustment of the center frequency and bandwidth of each adjustable channel, has the characteristics of self-packaging and low insertion loss, and has the advantages of simple device structure and simple and convenient adjustment.
Drawings
Fig. 1 is a schematic diagram of a layered structure of a frequency and bandwidth reconfigurable microwave duplexer based on a SISL structure in an embodiment, wherein 1 is a first dielectric substrate, 2 is a second dielectric substrate, 3 is a third dielectric substrate, 4 is a fourth dielectric substrate, and 5 is a fifth dielectric substrate.
Fig. 2 is a schematic structural diagram of a resonant circuit in the frequency and bandwidth reconfigurable microwave duplexer based on the SISL structure shown in fig. 1, wherein 3-1 is an input total feeder port, 3-2 is a first output feeder port, 3-3 is a second output feeder port, 3-4 is a first tunable filter, 3-5 is a second tunable filter, 3-6 is a bandwidth adjusting varactor, 3-7 is a frequency adjusting varactor, 3-8 is a blocking capacitor, and 3-9 is a large resistance.
Fig. 3 is a diagram of simulation test results in an initial state of a frequency and bandwidth reconfigurable microwave duplexer in an embodiment of the present invention.
Fig. 4 is a graph showing the return loss and isolation of the frequency and bandwidth reconfigurable microwave duplexer in the process of adjusting only the frequency and bandwidth of the first channel according to the embodiment of the present invention.
Fig. 5 is a diagram showing the insertion loss result of the frequency and bandwidth reconfigurable microwave duplexer in the process of adjusting only the frequency and bandwidth of the first channel according to the embodiment of the present invention.
Fig. 6 is a graph showing the return loss and isolation of the frequency and bandwidth reconfigurable microwave duplexer in the process of adjusting only the frequency and bandwidth of the second channel according to the embodiment of the present invention.
Fig. 7 is a diagram showing the insertion loss of the frequency and bandwidth reconfigurable microwave duplexer in the process of adjusting only the frequency and bandwidth of the second channel according to the embodiment of the present invention.
Fig. 8 is a graph of insertion loss results for a first channel bandwidth adjustment of a frequency and bandwidth reconfigurable microwave duplexer, in accordance with an embodiment of the present invention.
Fig. 9 is a graph showing the insertion loss results of bandwidth adjustment in the second channel of the frequency and bandwidth reconfigurable microwave duplexer according to an embodiment of the present invention.
Detailed Description
For the purpose of making apparent the objects, technical solutions and advantages of the present invention, the present invention will be further described in detail with reference to the following examples and the accompanying drawings, the exemplary embodiments of the present invention and the descriptions thereof are only for explaining the present invention and are not limiting the present invention.
Example 1
The present embodiment provides a frequency and bandwidth reconfigurable microwave duplexer based on a SISL structure, which has the main functions of dividing a broadband input signal into two paths of outputs corresponding to narrowband signals, and has the characteristics of center frequency reconfigurability and channel bandwidth reconfigurability, each channel is a two-step ladder impedance hybrid electromagnetic coupling resonator, the equivalent length of the resonator is changed by loading a varactor on each step resonator and adjusting the junction capacitance thereof, so as to change the resonant frequency of the channel, and secondly, the varactor is loaded between the two steps resonators, and the bias voltage is changed to change the coupling coefficient, so as to realize the bandwidth adjustability.
As shown in fig. 1, the frequency and bandwidth reconfigurable microwave duplexer based on the SISL structure specifically includes: a fifth dielectric substrate 5, a fourth dielectric substrate 4, a third dielectric substrate 3, a second dielectric substrate 2 and a first dielectric substrate 1 which are sequentially stacked from bottom to top; the upper surface and the lower surface of each dielectric substrate are respectively covered with an upper metal layer and a lower metal layer, metal through holes are formed in the periphery of each dielectric substrate, and the metal through holes are connected with the upper metal layer and the lower metal layer; rectangular windows with the same size are correspondingly formed in the same positions of the second dielectric substrate 2 and the fourth dielectric substrate 4, penetrate through the dielectric substrate and the upper metal layer and the lower metal layer of the dielectric substrate, and form air cavities on the upper surface and the lower surface of the third dielectric substrate; the upper metal layer of the third dielectric substrate is opposite to the air cavity to etch and form a reconfigurable three-duplexer resonant circuit, and the lower metal layer of the third dielectric substrate is opposite to the air cavity to form a rectangular window.
As shown in fig. 2, the reconfigurable triplexer resonant circuit includes: an input total feeder port 3-1, a first output feeder port 3-2, a second output feeder port 3-3, a first tunable filter 3-4, and a second tunable filter 3-5; the first adjustable channel is formed by the input total feeder port, the first adjustable filter and the first output feeder port, and the second adjustable channel is formed by the input total feeder port, the second adjustable filter and the second output feeder port; the input total feeder port is directly connected with the first adjustable filter and the second adjustable filter for feeding, and the first adjustable filter and the second adjustable filter are respectively and directly connected with the corresponding output feeder port. The first tunable filter 3-4 and the second tunable filter 3-5 have similar structures and each include: the two-step ladder impedance hybrid coupling resonator comprises 2 frequency adjustment variable capacitors 3-6, 2 bandwidth adjustment variable capacitors 3-7 and 4 blocking capacitors 3-8; in the two-step ladder impedance hybrid coupled resonator, one end of a high-impedance line of each step resonator is grounded and short-circuited, and a frequency adjustment variable capacitor is loaded at a neighboring short-circuited end, 2 bandwidth adjustment variable capacitors are serially connected and then loaded between low-impedance lines of the two-step resonator, and blocking capacitors are respectively loaded between the bandwidth adjustment variable capacitor and the hybrid coupled resonator, and a signal input port and an output port of the hybrid coupled resonator.
Further, the working frequency of the first adjustable channel is f 1 The working frequency of the second adjustable channelIs f 2 The two satisfy the relation: f (f) 1 <f 2 。
Furthermore, in the first adjustable filter and the second adjustable filter, variable capacitors are varactors, and a bias circuit of each variable diode is in a mode of loading 300Kohm resistors 3-9 and externally connecting a direct current voltage stabilizing source; the short-circuited ends of the high-impedance lines at the grounding end of the frequency adjusting varactor diode are commonly grounded, and the grounding end of the bandwidth adjusting varactor diode is connected with a large resistor in series for 3-9 and then grounded.
Based on the above structure, the initial design center frequency of the frequency and bandwidth reconfigurable duplexer based on the SISL structure in this embodiment is set at: 2.1GHz and 2.7GHz, the capacitance values of the initial given varactors are respectively 0.9pF and 1.8pF, and the substrate 3 adopts Rogowski 5880 with the thickness of 0.254mm, so that the specific physical size of the resonator can be determined; the substrate 1 and the substrate 5 are made of FR4 boards with the thickness of 0.6mm, and the substrate 2 and the substrate 4 are made of FR4 boards with the thickness of 2 mm; in the first tunable filter, the length of a high impedance line of each stage of the two-stage ladder impedance hybrid coupled resonator is l3=21.2 mm, the length of a low impedance line is l4=19.7 mm, the length of a loading position of the frequency tunable capacitance diode from a short-circuit end is l1=5 mm, the length of a loading position of the bandwidth tunable capacitance diode from an open-circuit end is l2=14.6 mm, the bias value of the bandwidth tuning capacitance diode is V1, and the bias value of the frequency tuning capacitance diode is V2; in the second tunable filter, the length of a high impedance line of each stage of the two-stage ladder impedance hybrid coupled resonator is l7=9 mm, the length of a low impedance line is l8=14.7 mm, the length of a loading position of the frequency tunable varactor from a short-circuit end is l5=5 mm, the length of a loading position of the bandwidth tunable varactor from an open-circuit end is l6=13.3 mm, the bias value of the bandwidth tuning varactor is V3, and the bias value of the frequency tuning varactor is V4; in each adjustable channel, the resonant frequency is adjusted by controlling the bias value of the frequency adjustment variable capacitance capacitor, and the bandwidth is adjusted by controlling the reverse bias voltage of the bandwidth adjustment variable capacitance capacitor; it should be noted that: the specific loading positions (L1, L2, L5 and L6) of the frequency-adjustable varactor and the bandwidth-adjustable varactor can be adaptively and optimally adjusted according to impedance matching, and the functions of the frequency-adjustable varactor and the bandwidth-adjustable varactor are not affected.
As shown in fig. 3 to 9, as shown by simulation and test results of the reconfigurable microwave duplexer of the present embodiment, the center frequency of each channel can be adjusted individually or simultaneously, and the bandwidth can be adjusted within a certain range. As can be seen from FIG. 3, initial simulation and test results show that the two channels have better in-band matching, and S 11 The insertion loss of the two channels is less than or equal to-10 dB, the insertion loss of the two channels is respectively less than 0.95dB and 0.82dB, and the insertion loss of the two channels is respectively less than 1.67dB and 1.96dB. Fig. 4 to fig. 9 illustrate simulation characteristics when the frequency and bandwidth of the diplexer are adjusted, wherein fig. 4 to fig. 7 are simulation results of adjusting the first and second adjustable channels separately, and it is easy to know that when one channel is adjusted separately, the transmission characteristics of other channels are hardly affected, specifically, the first channel frequency adjustable range is: 1.71-2.34GHz (650 MHz); the second channel frequency adjustable range is: 2.50-3.32GHz (820 MHz) and in all states of tuning the two tunable channels the isolation between ports is greater than 30dB. FIGS. 8 and 9 show the bandwidth variation of two tunable channels, as C 2 The first tunable filter bandwidth adjustment capacitance (first tunable filter bandwidth adjustment capacitance) was varied from 0.5pF to 2.4pF, the first channel bandwidth was increased from 80MHz to 160MHz, and the 1db bandwidth was varied over 80MHz. When C 6 The 1dB bandwidth of channel two increases from 140MHz to 290MHz with a bandwidth change ranging from 0.5pF to 2.4pF (second tunable filter bandwidth tuning capacitance). Based on the above, it is proved that the bandwidth adjustment can be achieved by loading the varactor in the middle of the low impedance gap between the two resonant channels of the duplexer. In summary, from the simulation result, the duplexer of the present invention realizes the reconfigurable functions of both channel frequency and bandwidth, and has the advantages of small size and low insertion loss.
While the invention has been described in terms of specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the equivalent or similar purpose, unless expressly stated otherwise; all of the features disclosed, or all of the steps in a method or process, except for mutually exclusive features and/or steps, may be combined in any manner.
Claims (6)
1. A frequency and bandwidth reconfigurable diplexer based on a SISL structure, comprising: five layers of dielectric substrates (5-1) are sequentially stacked from bottom to top; the method is characterized in that:
each layer of dielectric substrate adopts a double-layer plate, the second dielectric substrate (2) and the fourth dielectric substrate (4) are correspondingly provided with rectangular windows with the same size at the same position, the rectangular windows penetrate through the dielectric substrate and the upper and lower metal layers thereof, and air cavities are formed on the upper and lower surfaces of the third dielectric substrate; etching the upper metal layer of the third dielectric substrate opposite to the air cavity to form a reconfigurable three-duplexer resonant circuit, and forming a rectangular window opposite to the air cavity by the lower metal layer of the third dielectric substrate;
the reconfigurable triplexer resonant circuit includes: an input total feeder port (3-1), a first output feeder port (3-2), a second output feeder port (3-3), a first tunable filter (3-4) and a second tunable filter (3-5); the first adjustable channel is formed by the input total feeder port, the first adjustable filter and the first output feeder port, and the second adjustable channel is formed by the input total feeder port, the second adjustable filter and the second output feeder port; the input total feeder port is directly connected with the first adjustable filter and the second adjustable filter for feeding, and the first adjustable filter and the second adjustable filter are respectively and directly connected with the corresponding output feeder port.
2. The frequency and bandwidth reconfigurable duplexer of claim 1, wherein the first tunable path has an operating frequency f 1 The working frequency of the second adjustable channel is f 2 The two satisfy the relation: f (f) 1 <f 2 。
3. A frequency and bandwidth reconfigurable duplexer based on a SISL architecture according to claim 1, characterized in that said first tunable filter (3-4) and said second tunable filter (3-5) respectively comprise: the two-step ladder impedance hybrid coupling resonator comprises a two-step ladder impedance hybrid coupling resonator, 2 frequency adjustment variable capacitors (3-6), 2 bandwidth adjustment variable capacitors (3-7) and 4 blocking capacitors (3-8); in the two-step ladder impedance hybrid coupled resonator, one end of a high-impedance line of each step resonator is grounded and short-circuited, and a frequency adjustment variable capacitor is loaded at a neighboring short-circuited end, 2 bandwidth adjustment variable capacitors are serially connected and then loaded between low-impedance lines of the two-step resonator, and blocking capacitors are respectively loaded between the bandwidth adjustment variable capacitor and the hybrid coupled resonator, and a signal input port and an output port of the hybrid coupled resonator.
4. The duplex device according to claim 3, wherein the variable capacitors are varactors, the ground terminal of the frequency adjusting variable capacitor is connected to the short-circuited terminal of the high-impedance line, and the ground terminal of the bandwidth adjusting variable capacitor is connected in series with a large resistor and then connected to the ground.
5. The duplex device according to claim 3, wherein the bias circuit of each variable capacitor is a large-resistance and external direct-current voltage-stabilizing source.
6. A frequency and bandwidth reconfigurable duplexer based on a SISL structure as claimed in claim 3, wherein in each adjustable channel, the resonant frequency adjustment is achieved by controlling the magnitude of the reverse bias voltage of the frequency-adjusting varactor, and the bandwidth adjustment is achieved by controlling the magnitude of the reverse bias voltage of the bandwidth-adjusting varactor.
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