CN116632150A - High-power white light LED packaging method and packaging structure - Google Patents
High-power white light LED packaging method and packaging structure Download PDFInfo
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- CN116632150A CN116632150A CN202310578096.9A CN202310578096A CN116632150A CN 116632150 A CN116632150 A CN 116632150A CN 202310578096 A CN202310578096 A CN 202310578096A CN 116632150 A CN116632150 A CN 116632150A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a high-power LED packaging method and a packaging structure, wherein the LED packaging method is used for packaging fluorescent powder and SiO 2 And B 2 O 3 Mixing the materials as a target A, forming a high-boron silicon fluorescent glass layer coated with fluorescent powder on the surface of one side of a monocrystalline sapphire substrate through electron beam evaporation and deposition to obtain sapphire substrate fluorescent glass, stacking a quantum dot film on the back surface of the sapphire substrate fluorescent glass, carrying out electron beam evaporation and deposition on the high-boron silicon glass until one side of a blue light LED array is fixed and the high-boron silicon glass completely covers the blue light LED array to obtain an LED module, and fixing the LED module and the fluorescent glass compounded with the quantum dot film to obtain a high-power LED packaging structure. According to the high-power white light LED packaging structure, the high borosilicate glass layer is deposited on the LED substrate to be embedded with the luminous LED, and the yellow fluorescent layer is separated from the red quantum dot layer, so that a coating is formedThe high-boron silicon fluorescent glass layer of the fluorescent powder keeps a distance with the high-boron silicon glass layer when being fixed with the LED module, so that the high-power white light LED has high luminous efficiency and high heat dissipation efficiency.
Description
Technical Field
The invention relates to the field of LEDs, in particular to a high-power white light LED packaging method and a high-power white light LED packaging structure.
Background
Compared with the traditional illumination light source, the light-emitting diode (LED) has the advantages of low power consumption, good driving characteristic, high response speed, strong shock resistance, long service life, environmental protection, continuously and rapidly improved luminous efficiency and the like, and becomes a new generation light source for replacing the traditional light source in the world at present.
As a semiconductor device, an LED is extremely sensitive to temperature, and an increase in junction temperature may have a certain influence on the lifetime, light efficiency, color temperature, light color (wavelength), light shape (light distribution), forward voltage, luminosity, chromaticity, maximum injection current, reliability, and the like of the LED. Particularly, a large amount of heat is generated in the use process of the high-power LED chip, and although various types of heat sinks are developed to transmit the heat transmitted by the chip substrate, the junction temperature problem of the high-power LED chip cannot be solved only by the heat sink fixed on the LED substrate.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a high-power white light LED packaging method and a packaging structure.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: a method of packaging a high power white light LED, the method comprising the steps of:
(1) Phosphor powder and SiO 2 And B 2 O 3 Mixing the materials as a target A, and forming a high-boron silicon fluorescent glass layer coated with fluorescent powder on one side surface of a single crystal sapphire substrate by electron beam evaporation and deposition to obtain the fluorescent glass of the sapphire substrate, wherein the projection of the high-boron silicon fluorescent glass layer coated with the fluorescent powder is consistent with that of the single crystal sapphire substrate, and the emission light of the fluorescent powder has the common wavelength of 500-560 nm; in the target material A, the weight percentage of fluorescent powder is 15-25%, B 2 O 3 The mass of (a) is the mass of SiO in the target material A 2 And B 2 O 3 12% -20% of the total mass;
(2) Stacking a quantum dot film on the back surface of the sapphire substrate fluorescent glass, namely, on one side of a high-boron silicon fluorescent glass layer which is not deposited with coating fluorescent powder, so as to obtain fluorescent glass compounded with the quantum dot film, wherein the luminous spectrum of the quantum dot film is 600-650 nm;
(3) The LED module comprises an LED substrate, a blue light LED array, a high borosilicate glass layer, a light-emitting diode (LED) module and a light-emitting diode (LED) module, wherein the edge of the LED substrate is provided with a surrounding dam which is perpendicular to the surface of the LED substrate, the material of the surrounding dam is the same as that of the LED substrate, the blue light LED array is fixed on the side of the LED substrate with the surrounding dam, the high borosilicate glass is deposited on the side, which is fixed with the blue light LED array, of the high borosilicate glass completely covers the blue light LED array by electron beam evaporation, a membranous high borosilicate glass layer consistent with the projection of the substrate is formed, and the top surface of the membranous high borosilicate glass layer and the top of the surrounding dam form a recess to obtain the LED module;
(4) Fixing the fluorescent glass compounded with the quantum dot film with the LED module to obtain a white light LED, wherein the high-boron silicon fluorescent glass layer coated with the fluorescent powder is adjacent to the high-boron silicon fluorescent glass layer on the LED module, and a certain distance is kept between the high-boron silicon fluorescent glass layer coated with the fluorescent powder and the high-boron silicon glass layer on the LED module;
(5) Fixing a radiator on one side of an LED substrate on the white light LED obtained in the step (4), wherein the radiator is fixed on one side of the LED substrate, on which a blue light LED is not mounted;
the step (3) has no sequence relation with the step (1) and the step (2).
In the process of packaging and preparing the high-power LED chip, the problem of junction temperature of the high-power LED chip still cannot be solved only through the radiator fixed on the LED substrate. When the LED chip is electrified to work, one part of energy is converted into light energy, and the other part of electric energy is converted into heat. It has been found that some of the heat is conducted away through the heat sink of the chip substrate, but the heat sink is less efficient and does not conduct all of the heat away through the heat sink of the chip substrate. Most of the LED chips are arranged on the LED substrate in an array mode, so that the temperature of the position, where the LEDs are fixed, on the chip substrate is high, and the temperature of the position, where the LEDs are not fixed, of the substrate is relatively low, and the light emission of the LEDs is affected by high temperature. According to the method, the high borosilicate glass layer is deposited on one side of the substrate for fixing the LEDs through electron beam evaporation, so that the high borosilicate glass layer is completely embedded with the LEDs, heat generated by electrifying and lighting of the LEDs is conducted to the high borosilicate glass layer embedded with the LEDs while conducted to the LED substrate, the high borosilicate glass has excellent heat dissipation performance, heat conducted to the LED substrate by the LEDs is quickly conducted and distributed to the high borosilicate glass layer, the high borosilicate glass layer is embedded with the LEDs and is directly deposited on the LED substrate, the heat is conducted to the substrate more uniformly, heat concentration at the position for fixing the LEDs on the chip substrate is reduced, the whole LED substrate is enabled to dissipate heat more uniformly through the radiator fixed on the substrate, and the heat dissipation efficiency of the LEDs through the radiator of the chip substrate is improved. For white light LEDs, a single color LED light emitting diode is typically used to generate white light with a corresponding phosphor layer, whereas quantum dot white LEDs typically have red quantum dots and phosphor mixed directly. In research, it is found that after the high borosilicate glass layer is deposited on one side of the substrate for fixing the LED through electron beam evaporation and is fixed with the fluorescent layer, although the heat dissipation efficiency of the substrate side radiator is improved, the high thermal conductivity of the high borosilicate glass has negative effects, and heat is conducted from the high borosilicate glass layer to yellow fluorescent powder and red quantum dots, so that the quantum dots are thermally quenched at high temperature, and the light emitting performance of the quantum dot white LED is further reduced. Therefore, the high borosilicate glass layer on the LED substrate is kept at a certain distance from the fluorescent layer, the yellow fluorescent layer is separated from the red quantum dot layer, and the high borosilicate glass target material containing the yellow fluorescent powder is deposited by electron beam evaporation to form the high borosilicate fluorescent glass layer coated with the fluorescent powder, so that partial heat transfer can be shared through the high borosilicate glass layer on the LED substrate and the good thermal conductivity of the high borosilicate glass of the fluorescent layer, the heat radiation load of a substrate radiator is reduced, meanwhile, the high borosilicate fluorescent glass layer coated with the fluorescent powder is kept at a certain distance from the high borosilicate glass layer on the LED module, the heat transmission rate of the high borosilicate glass layer to the quantum dots is slowed down, the effect of reducing the heat radiation load of the substrate radiator by heat radiation is achieved, the heat quenching of the quantum dots caused by heat concentration of the quantum dot layer is avoided, and the luminous efficiency is improved. In addition, the high borosilicate glass has good optical performance, and the material of the high borosilicate glass does not negatively influence the light efficiency of the LED. In the method, a high borosilicate glass layer is deposited on an LED substrate and is embedded with a luminous LED, a yellow fluorescent layer and a red quantum dot layer are separated, and an electron beam evaporation deposition is used for depositing a high borosilicate glass target material containing yellow fluorescent powder, so that the high borosilicate fluorescent glass layer coated with the fluorescent powder and the high borosilicate glass layer coated with the fluorescent powder are formed, and a certain distance is kept between the high borosilicate fluorescent glass layer coated with the fluorescent powder and the high borosilicate glass layer on the LED module.
In the method, the fluorescent glass compounded with the quantum dot film is prepared in the step (1) and the step (2); step (3) preparing an LED module; as a person skilled in the art can clearly understand, the sequence of preparing fluorescent glass compounded with quantum dot film and preparing LED module does not affect the implementation of the method, and step (3) has no sequence relation with step (1) and step (2).
The edge of the LED substrate is provided with a surrounding dam perpendicular to the surface of the LED substrate, and the top surface of the membranous high borosilicate glass layer and the top of the surrounding dam form a dent, so that a certain distance is kept between the high borosilicate glass layer coated with fluorescent powder and the high borosilicate glass layer on the LED module after the fluorescent glass compounded with the quantum dot film is fixed with the LED module. The material of the surrounding dam is the same as that of the LED substrate, so that the light leakage phenomenon can be avoided.
Preferably, in the target material A, the weight percentage of the fluorescent powder is 18-20%, B 2 O 3 The mass of (a) is the mass of SiO in the target material A 2 And B 2 O 3 15-18% of total mass;
preferably, the LED substrate material is: mirror aluminum substrate, al 2 O 3 Any one of a ceramic substrate, an AlN ceramic substrate and an aluminum silicon carbide substrate.
The light-emitting spectrum of the quantum dot film is 600-650 nm. Suitable quantum dot film materials can be selected by those skilled in the art.
The light-emitting common wavelength of the fluorescent powder is 500-560 nm. The selection of suitable phosphor materials will be within the ability of those skilled in the art.
Preferably, in the step (1), the method for depositing the high borosilicate glass coated with the fluorescent powder by electron beam evaporation comprises the steps of; placing target powder in a graphite crucible according to weight ratio, placing into an electron beam evaporator, and reducing vacuum degree to 1.5X10 -3 And after Pa is lower, the electron beam is turned on to start evaporation, the current is 150-180 mA, the substrate is turned on to rotate to start deposition, the deposition rate is 2.5-5A/S, the substrate is heated to 130-160 ℃, and the thickness of the deposited material is monitored by a film thickness meter.
According to the method, the high borosilicate glass coated with the fluorescent powder is deposited by electron beam evaporation, so that the fluorescent powder is more uniformly distributed in the fluorescent layer, and the negative influence of the fluorescent powder on light emission and heat dissipation by using a fixing material in a bonding mode, a spin coating mode and the like is avoided. And the high borosilicate glass coated with the fluorescent powder is deposited by electron beam evaporation, so that the reduction of the heat conduction and optical performance of the high borosilicate glass coated with the fluorescent powder caused by the high temperature condition of the glass preparation process or the reduction of the boron silicon content in the glass material after the cosolvent is added is avoided.
Preferably, the thickness ratio of the sapphire substrate layer, the quantum dot film and the high-boron silicon fluorescent glass layer coated with fluorescent powder is 1: (0.9-1.1): (0.9-1.1)
Preferably, the thickness of the high boron silicon fluorescent glass layer coated with the fluorescent powder is 30-200 mu m.
Preferably, in the step (2), the preparation method of the quantum dot film comprises the steps of dispersing a quantum dot solution into ultraviolet curing glue, and ultraviolet curing the solution into a sheet shape in a mold to obtain the quantum dot film, wherein the mass fraction of the quantum dots in the quantum dot film is 0.10% -0.30%, and the solvent of the quantum dot solution is an organic solvent.
Preferably, the mass fraction of the quantum dots in the quantum dot film is 0.20% -0.25%.
According to the method, the quantum dots are dispersed in the curing adhesive by using the organic solvent, so that the quantum dots are distributed more uniformly, and the improvement of luminous efficiency is facilitated.
Preferably, after dispersing the quantum dot solution into the ultraviolet curing adhesive, heating the mixed solution at 50-70 ℃ to completely volatilize and remove the organic solvent, wherein the organic solvent can be toluene or benzene.
Preferably, in the step (3), the method for depositing the high borosilicate glass by electron beam evaporation comprises the steps of; placing target material in graphite crucible, placing into electron beam evaporator, vacuum degree is reduced to 1.5X10 -3 After Pa or below, opening the electron beam to start evaporation, starting the rotation of the substrate, starting deposition with a deposition rate of 2.5-5A/S, heating the substrate to 130-160deg.C, and monitoring the thickness of the deposited material with a film thickness meter, wherein the target is made of SiO 2 And B 2 O 3 Composition of said B 2 O 3 The mass percentage of the target material is 12-20%.
And the high borosilicate glass coated with the fluorescent powder is deposited by electron beam evaporation, so that the reduction of the heat conduction and optical performance of the high borosilicate glass coated with the fluorescent powder caused by the high temperature condition of the glass preparation process or the reduction of the boron silicon content in the glass material after the cosolvent is added is avoided.
Preferably, in the step (4), a certain distance is kept between the high borosilicate fluorescent glass layer coated with the fluorescent powder and the high borosilicate glass layer on the LED module, where: 20-80 mu m.
Preferably, the wavelength range of the light emission spectrum of the blue light LED on the LED module is 400-500 nm.
Preferably, in the step (2), the quantum dot film is stacked on the back surface of the fluorescent glass of the sapphire substrate, and the ultraviolet curing glue is used as an adhesive on the back surface of the fluorescent glass of the sapphire substrate to be exposed under an ultraviolet LED lamp to cure the curing glue.
Preferably, the method for fixing the blue light LED array on the side of the LED substrate with the dam comprises the steps of using ultraviolet curing glue as an adhesive to expose under an ultraviolet LED lamp to cure the curing glue;
preferably, the method for fixing the fluorescent glass compounded with the quantum dot film and the LED module is to use ultraviolet curing glue as an adhesive to expose under an ultraviolet LED lamp to cure the curing glue.
The invention also provides a high-power white light LED packaging structure, which comprises fluorescent glass compounded with a quantum dot film, an LED module and a radiator;
the fluorescent glass compounded with the quantum dot film comprises a sapphire substrate layer, a quantum dot film and a high-boron silicon fluorescent glass layer coated with fluorescent powder, wherein the light-emitting spectrum of the quantum dot film is 600-650 nm, and the quantum dot film and the high-boron silicon fluorescent glass layer coated with the fluorescent powder are respectively stacked on two sides of the sapphire substrate layer;
the high boron silicon fluorescent glass layer coated with the fluorescent powder is prepared by mixing the fluorescent powder and SiO 2 And B 2 O 3 Mixing the single crystal sapphire substrate and the single crystal sapphire substrate as a target material A, and depositing the single crystal sapphire substrate on one side surface of the single crystal sapphire substrate by electron beam evaporation to form a single crystal sapphire substrate; the luminous wavelength of the fluorescent powder is 500-560 nm;
the LED module comprises an LED substrate, a blue light LED array and a membranous high borosilicate glass layer, wherein the edge of the LED substrate is provided with a surrounding dam perpendicular to the surface of the LED substrate, the surrounding dam is made of the same material as the LED substrate, the blue light LED array is fixed on one side of the LED substrate with the surrounding dam, and the membranous high borosilicate glass layer is prepared by using SiO (silicon oxide) as a material of the surrounding dam 2 And B 2 O 3 Mixing the film-shaped high borosilicate glass layer serving as a target material and depositing the film-shaped high borosilicate glass layer on an LED substrate on one side of which a blue LED array is fixed through electron beam evaporation, wherein the blue LED array is completely covered by high borosilicate glass, so that a film-shaped high borosilicate glass layer consistent with the projection of the substrate is formed, and a concave is formed on the top surface of the film-shaped high borosilicate glass layer and the top of a surrounding dam;
The fluorescent glass compounded with the quantum dot film is fixed with the LED module, the high-boron silicon fluorescent glass layer coated with the fluorescent powder is adjacent to the high-boron silicon fluorescent glass layer on the LED module, and a certain distance is kept between the high-boron silicon fluorescent glass layer coated with the fluorescent powder and the high-boron silicon glass layer on the LED module;
the radiator is fixed on one side of the LED substrate, on which the blue light LED is not mounted.
According to the high-power white light LED packaging structure, the high borosilicate glass layer is deposited on one side of the substrate for fixing the LEDs through electron beam evaporation, so that the high borosilicate glass layer is completely embedded with the LEDs, heat generated by energizing and lighting of the LEDs is conducted to the high borosilicate glass layer embedded with the LEDs while conducted to the LED substrate, the high borosilicate glass has excellent heat dissipation performance, heat conducted to the LED substrate by the LEDs is quickly conducted and distributed to the high borosilicate glass layer, the high borosilicate glass layer is embedded with the LEDs, the high borosilicate glass layer is directly deposited on the LED substrate, the heat is more uniformly conducted to the substrate, heat concentration at the position for fixing the LEDs on the chip substrate is reduced, the whole LED substrate is enabled to be more uniformly dissipated through the radiator fixed on the substrate, and the heat dissipation efficiency of the LEDs through the radiator of the chip substrate is improved. According to the high-power white light LED packaging structure, the high borosilicate glass layer on the LED substrate is kept at a certain distance from the fluorescent layer, meanwhile, the yellow fluorescent layer is separated from the red quantum dot layer, the high borosilicate glass target containing the yellow fluorescent powder is deposited by electron beam evaporation, and the high borosilicate fluorescent glass layer coated with the fluorescent powder is formed, so that partial heat transfer can be shared through the high borosilicate glass layer on the LED substrate and the good heat conductivity of the high borosilicate glass of the fluorescent layer, the heat dissipation load of a substrate radiator is reduced, meanwhile, the certain distance is kept between the high borosilicate fluorescent glass layer coated with the fluorescent powder and the high borosilicate glass layer on the LED module, the heat transfer rate of the high borosilicate glass layer to the quantum dots is slowed down, the effect of heat dissipation and the heat dissipation load of the substrate radiator is reduced can be achieved, the heat quenching of the quantum dots caused by heat concentration of the quantum dot layer at high temperature is avoided, and the luminous efficiency is improved. In addition, the high borosilicate glass has good optical performance, and the material of the high borosilicate glass does not negatively influence the light efficiency of the LED. In the high-power white light LED packaging structure, the high borosilicate glass layer is deposited on the LED substrate and embedded with the luminous LED, meanwhile, the yellow fluorescent layer and the red quantum dot layer are separated, and the high borosilicate glass target material containing the yellow fluorescent powder is deposited by using electron beam evaporation, so that the high borosilicate fluorescent glass layer coated with the fluorescent powder, the high borosilicate fluorescent glass layer coated with the fluorescent powder and the high borosilicate glass layer on the LED module are kept at a certain distance, and the technical cores are mutually complementary, combined and matched, so that the high-power white light LED has high luminous efficiency and high heat dissipation efficiency.
Preferably, the thickness of the high-boron silicon fluorescent glass layer coated with the fluorescent powder is 30-200 mu m, a certain distance is kept between the high-boron silicon fluorescent glass layer coated with the fluorescent powder and the high-boron silicon glass layer on the LED module, the wavelength range of the light-emitting spectrum of the blue LED on the LED module is 400-500 nm.
The high-power white light LED packaging structure has better heat dissipation performance, luminous efficiency and white light uniformity.
Preferably, the thickness ratio of the sapphire substrate layer, the quantum dot film and the high-boron silicon fluorescent glass layer coated with fluorescent powder is 1: (0.9-1.1): (0.9-1.1).
Through research, the high-power white light LED packaging structure has better white light uniformity.
Preferably, the radiator is a fin type radiator having a radiating surface and fins.
The invention has the beneficial effects that: the invention provides a high-power white light LED packaging method and a packaging structure. According to the high-power white light LED packaging structure, the high borosilicate glass layer is deposited on one side of the substrate for fixing the LEDs through electron beam evaporation, so that the high borosilicate glass layer is completely embedded with the LEDs, heat generated by electrifying and lighting of the LEDs is conducted to the high borosilicate glass layer embedded with the LEDs while being conducted to the LED substrate, the high borosilicate glass has excellent heat dissipation performance, heat conducted to the LED substrate by the LEDs is quickly conducted and distributed to the high borosilicate glass layer, the high borosilicate glass layer is embedded with the LEDs and is directly deposited on the LED substrate, the heat is conducted to the substrate more uniformly, heat concentration of the position for fixing the LEDs on the chip substrate is reduced, the whole LED substrate can be enabled to dissipate heat more uniformly through the radiator fixed on the substrate, and the heat dissipation efficiency of the LEDs through the radiator of the chip substrate is improved. According to the high-power white light LED packaging structure, the high borosilicate glass layer on the LED substrate is kept at a certain distance from the fluorescent layer, meanwhile, the yellow fluorescent layer is separated from the red quantum dot layer, the high borosilicate glass target containing the yellow fluorescent powder is deposited by electron beam evaporation, and the high borosilicate fluorescent glass layer coated with the fluorescent powder is formed, so that partial heat transfer can be shared through the high borosilicate glass layer on the LED substrate and the good heat conductivity of the high borosilicate glass of the fluorescent layer, the heat dissipation load of a substrate radiator is reduced, meanwhile, the certain distance is kept between the high borosilicate fluorescent glass layer coated with the fluorescent powder and the high borosilicate glass layer on the LED module, the heat transfer rate of the high borosilicate glass layer to the quantum dots is slowed down, the effect of heat dissipation and the heat dissipation load of the substrate radiator is reduced can be achieved, the heat quenching of the quantum dots caused by heat concentration of the quantum dot layer at high temperature is avoided, and the luminous efficiency is improved. In addition, the high borosilicate glass has good optical performance, and the material of the high borosilicate glass does not negatively influence the light efficiency of the LED. In the high-power white light LED packaging structure, the high borosilicate glass layer is deposited on the LED substrate and embedded with the luminous LED, meanwhile, the yellow fluorescent layer and the red quantum dot layer are separated, and the high borosilicate glass target material containing the yellow fluorescent powder is deposited by using electron beam evaporation, so that the high borosilicate fluorescent glass layer coated with the fluorescent powder, the high borosilicate fluorescent glass layer coated with the fluorescent powder and the high borosilicate glass layer on the LED module are kept at a certain distance, and the technical cores are mutually complementary, combined and matched, so that the high-power white light LED has high luminous efficiency and high heat dissipation efficiency.
Drawings
Fig. 1 is a schematic diagram of a high-power white LED package structure according to an embodiment of the present invention.
The quantum dot film comprises a quantum dot film, a sapphire substrate layer (2), a high-boron silicon fluorescent glass layer coated with fluorescent powder, an LED substrate, an LED (light-emitting diode) substrate, a surrounding dam, a blue LED array, a gap between the high-boron silicon fluorescent glass layer coated with the fluorescent powder and the high-boron silicon glass layer on an LED module, a radiator, a radiating surface, a fin, a film-shaped high-boron silicon glass layer and a fin.
Fig. 2 is a schematic diagram of an LED module in a high-power white LED package structure according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of an LED substrate with a dam in a high-power white LED package structure according to an embodiment of the present invention.
Fig. 4 is a diagram of a quantum dot emission spectrum in a high-power white LED package structure according to an embodiment of the present invention.
Fig. 5 is an emission spectrum of a phosphor in a high-power white LED package according to an embodiment of the present invention.
Detailed Description
For a better description of the objects, technical solutions and advantages of the present invention, the present invention will be further described with reference to the following specific examples.
Example 1
As a high-power white light LED packaging structure in the embodiment 1 of the invention, as shown in FIG. 1, the high-power white light LED packaging structure comprises fluorescent glass compounded with a quantum dot film, an LED module and a radiator;
The fluorescent glass compounded with the quantum dot film comprises a sapphire substrate layer (2), the quantum dot film (1) and a high-boron silicon fluorescent glass layer (3) coated with fluorescent powder, wherein the light-emitting spectrum of the quantum dot film (1) is 600-650 nm, and the quantum dot film (1) and the high-boron silicon fluorescent glass layer (3) coated with fluorescent powder are respectively stacked on two sides of the sapphire substrate layer (2); the quantum dot film material used in the embodiment is CdSe/ZnS quantum dots; the emission spectrum is shown in fig. 4.
The high boron silicon fluorescent glass layer (3) coated with the fluorescent powder is prepared by mixing the fluorescent powder and SiO 2 And B 2 O 3 The mixture is used as a target material A, and is formed on one side surface of a single crystal sapphire substrate (2) through electron beam evaporation deposition; the luminous wavelength of the fluorescent powder is 500-560 nm; the fluorescent powder material is La 2.82 Si 6 N 11 Ce 3+ 0.18 The emission spectrum is shown in FIG. 5.
As shown in FIG. 2, the LED module comprises an LED substrate (4), a blue LED array (6) and a membranous high borosilicate glass layer (11), as shown in FIG. 3, the edge of the LED substrate is provided with a surrounding dam (5) perpendicular to the surface of the LED substrate, the material of the surrounding dam (5) is the same as that of the LED substrate (4), the blue LED array (6) is fixed on one side of the LED substrate (4) with the surrounding dam (5), and the membranous high borosilicate glass layer (11) is formed by bonding SiO 2 And B 2 O 3 Mixing the materials as targets, depositing the targets on an LED substrate (4) fixed with one side of a blue LED array (6) through electron beam evaporation, and completely covering the blue LED array (6) by high borosilicate glass to form a membranous high borosilicate glass layer (11) consistent with the projection of the substrate, wherein the top surface of the membranous high borosilicate glass layer (11) and the top of a surrounding dam (5) form a dent;
The fluorescent glass compounded with the quantum dot film is fixed with the LED module, the high-boron silicon fluorescent glass layer (3) coated with the fluorescent powder is adjacent to the high-boron silicon fluorescent glass layer (11) on the LED module, and a certain distance is kept between the high-boron silicon fluorescent glass layer (3) coated with the fluorescent powder and the high-boron silicon glass layer (11) on the LED module; the distance forms a gap (7),
the radiator (8) is fixed on the side of the LED substrate (4) where the blue LED is not mounted.
Further, the thickness ratio of the sapphire substrate layer (2), the quantum dot film (1) and the high-boron silicon fluorescent glass layer (3) coated with fluorescent powder is 1:1:1.
further, the thickness of the high-boron silicon fluorescent glass layer coated with the fluorescent powder is 50 mu m, a certain distance is kept between the high-boron silicon fluorescent glass layer coated with the fluorescent powder and the high-boron silicon glass layer on the LED module, the wavelength range of the light-emitting spectrum of the blue light LED on the LED module is 400-500 nm, and the peak value is 454nm.
Further, the radiator (8) is a fin-type radiator, and the fin-type radiator is provided with a radiating surface (9) and fins (10).
The high-power white light LED packaging method provided by the embodiment of the invention comprises the following steps of:
(1) Phosphor powder and SiO 2 And B 2 O 3 Mixing the materials as a target A, and forming a high-boron silicon fluorescent glass layer coated with fluorescent powder on one side surface of a single crystal sapphire substrate by electron beam evaporation and deposition to obtain the fluorescent glass of the sapphire substrate, wherein the projection of the high-boron silicon fluorescent glass layer coated with the fluorescent powder is consistent with that of the single crystal sapphire substrate, and the fluorescent powder is La (lanthanum) 2.82 Si 6 N 11 Ce 3 + 0.18 The emission spectrum is shown in FIG. 5; in the target material A, the weight percentage of fluorescent powder is 18 percent, and B 2 O 3 The mass of (a) is the mass of SiO in the target material A 2 And B 2 O 3 15% of the total mass, B 2 O 3 Is 12.3 percent by mass of SiO 2 The mass percentage of (C) is 69.7%
(2) Stacking a quantum dot film on the back surface of the sapphire substrate fluorescent glass, namely, one side of a high-boron silicon fluorescent glass layer which is not deposited with coating fluorescent powder, so as to obtain fluorescent glass compounded with the quantum dot film, wherein the quantum dot film is made of CdSe/ZnS quantum dots; the emission spectrum is shown in figure 4;
(3) The edge of the LED substrate is provided with a surrounding dam perpendicular to the surface of the LED substrate, the surrounding dam is made of the same material as the LED substrate, and the LED substrate is made of Al 2 O 3 The ceramic substrate is used for fixing the blue light LED array on the side of the LED substrate with the surrounding dam, and carrying out electron beam evaporation and deposition on high borosilicate glass until the side of the ceramic substrate, on which the blue light LED array is fixed, is completely covered by the high borosilicate glass, so that a membranous high borosilicate glass layer consistent with the projection of the substrate is formed, and the top surface of the membranous high borosilicate glass layer and the top of the surrounding dam form a recess to obtain an LED module;
(4) Fixing the fluorescent glass compounded with the quantum dot film and the LED module to obtain a white light LED, wherein the high-boron silicon fluorescent glass layer coated with the fluorescent powder is adjacent to the high-boron silicon fluorescent glass layer on the LED module, and a certain distance is kept between the high-boron silicon fluorescent glass layer coated with the fluorescent powder and the high-boron silicon glass layer on the LED module, and fixing the fluorescent glass compounded with the quantum dot film and the LED module in an inert gas atmosphere;
(5) Fixing a radiator on one side of an LED substrate on the white light LED obtained in the step (4), wherein the radiator is fixed on one side of the LED substrate, on which a blue light LED is not mounted;
the step (3) has no sequence relation with the step (1) and the step (2).
In the method, the fluorescent glass compounded with the quantum dot film is prepared in the step (1) and the step (2); step (3) preparing an LED module; as a person skilled in the art can clearly understand, the sequence of preparing fluorescent glass compounded with quantum dot film and preparing LED module does not affect the implementation of the method, and step (3) has no sequence relation with step (1) and step (2).
In the step (1), the method for depositing the high borosilicate glass coated with the fluorescent powder by electron beam evaporation comprises the following steps; placing target powder in a graphite crucible according to weight ratio, placing into an electron beam evaporator, and reducing vacuum degree to 1.5X10 -3 And after Pa is lower, the electron beam is turned on to start evaporation, the current is 160mA, the substrate is turned on to rotate to start deposition, the deposition rate is 3A/S, the substrate is heated to 150 ℃, and the thickness of the deposited material is monitored by a film thickness meter.
Wherein the thickness of the high boron silicon fluorescent glass layer coated with the fluorescent powder is 50 mu m.
Wherein in the step (2), the preparation method of the quantum dot film comprises the steps of preparing the quantum dot film with toluene as a solvent and having the concentration of 20 mg.mL -1 The CdSe/ZnS quantum dot-toluene solution is taken as a red light quantum dot solution, the quantum dot solution is dispersed into ultraviolet curing glue, the mixed solution is heated at 60 ℃ to completely volatilize and remove the organic solvent, the organic solvent is ultraviolet cured into a sheet shape in a die, the luminous wavelength is 385nm, and the power density is 1.5W cm -2 The ultraviolet LED lamp irradiates ultraviolet curing glue containing quantum dots for 20 minutes to enable the ultraviolet curing glue to be completely cured to form a quantum dot film, wherein the mass fraction of the quantum dots in the quantum dot film is 0.20%.
Wherein, in the step (3), the method for depositing the high borosilicate glass by electron beam evaporation comprises the steps of; placing target material in graphite crucible, placing into electron beam evaporator, vacuum degree is reduced to 1.5X10 -3 After Pa or below, opening the electron beam to start evaporation, starting the rotation of the substrate, starting deposition at a deposition rate of 3A/S, heating the substrate to 150deg.C, and monitoring the thickness of the deposited material by using a film thickness meter, wherein the target is composed of SiO 2 And B 2 O 3 Composition of said B 2 O 3 The mass percentage of the target material is 15%.
In the step (4), a certain distance is kept between the high borosilicate fluorescent glass layer coated with the fluorescent powder and the high borosilicate glass layer on the LED module to be 25 mu m;
The wavelength range of the light-emitting spectrum of the blue light LED on the LED module is 400-500 nm, and the peak value is 454nm.
In the step (2), the quantum dot film is stacked on the back surface of the sapphire substrate fluorescent glass by adopting ultraviolet curing glue as an adhesive on the back surface of the sapphire substrate fluorescent glass, and curing the curing glue by exposing under an ultraviolet LED lamp; spin-coating ultraviolet glue on the bonding part, placing the bonding structure at a wavelength of 385nm and a power density of 1.5W cm -2 Exposing the adhesive under an ultraviolet LED lamp for 20 minutes to cure the adhesive;
the method for fixing the blue light LED array on the side of the LED substrate with the dam comprises the steps of using ultraviolet curing glue as an adhesive to expose under an ultraviolet LED lamp to cure the curing glue;
the method for fixing the fluorescent glass compounded with the quantum dot film and the LED module comprises the step of curing the curing adhesive by using the ultraviolet curing adhesive as an adhesive under the exposure of an ultraviolet LED lamp.
The method comprises the steps of polishing two sides of a sapphire glass sheet, sequentially ultrasonically cleaning a sapphire substrate in acetone, isopropanol and deionized water for 10 minutes before depositing a high-boron silicon fluorescent glass layer (3) coated with fluorescent powder, drying in an oven at 100 ℃ for 10 minutes after nitrogen blow-drying.
The specification of the length and the width of the blue LED chips is 900 mu m multiplied by 150 mu m, 4 multiplied by 4 arrangement of the chips is carried out, and the spacing of the blue LED chips is designed to be 3mm. The side length of the LED substrate is 1.6cm multiplied by 1.6cm, correspondingly, the radiator is a common fin radiator, the thickness of the radiating surface is 20mm, the thickness of the fins is 5mm multiplied by 5mm, the spacing is 5mm, and the height is 100mm.
Example 2
As a high-power white light LED packaging structure of the embodiment of the invention, the only difference between the embodiment and the embodiment 1 is that the thickness of the high-boron silicon fluorescent glass layer coated with the fluorescent powder is 30 mu m.
Example 3
As a high-power white light LED packaging structure of the embodiment of the invention, the only difference between the embodiment and the embodiment 1 is that the thickness of the high-boron silicon fluorescent glass layer coated with the fluorescent powder is 80 mu m.
Example 4
As a high-power white light LED packaging structure of the embodiment of the invention, the only difference between the embodiment and the embodiment 1 is that the thickness of the high-boron silicon fluorescent glass layer coated with the fluorescent powder is 140 mu m.
Example 5
As a high-power white light LED packaging structure of the embodiment of the invention, the only difference between the embodiment and the embodiment 1 is that the mass fraction of the quantum dots in the quantum dot film is 0.10%.
Example 6
As a high-power white light LED packaging structure of the embodiment of the invention, the only difference between the embodiment and the embodiment 1 is that the mass fraction of the quantum dots in the quantum dot film is 0.15%.
Example 7
As a high-power white light LED packaging structure of the embodiment of the invention, the only difference between the embodiment and the embodiment 1 is that the mass fraction of the quantum dots in the quantum dot film is 0.25%.
Example 8
As a high-power white light LED packaging structure of the embodiment of the invention, the only difference between the embodiment and the embodiment 1 is that the mass fraction of the quantum dots in the quantum dot film is 0.30%.
Comparative example 1
As a high-power white LED package structure of the comparative example of the present invention, the only difference between the present comparative example and example 1 is that the phosphor-coated high borosilicate fluorescent glass layer (3) is adjacent to the high borosilicate glass layer (11) on the LED module and the phosphor-coated high borosilicate fluorescent glass layer (3) is bonded to the high borosilicate glass layer (11) on the LED module. The height of the LED box dam is adjusted to be flush with the top of the high borosilicate glass layer (11) on the LED module, ultraviolet curing glue is coated on the top of the LED box dam in a spin mode and is fixed with the high borosilicate fluorescent glass layer (3) coated with fluorescent powder, and curing glue does not exist on the high borosilicate glass layer (11) on the LED module.
Comparative example 2
The only difference between the high-power white light LED packaging structure of the comparative example and the embodiment 1 is that the LED module comprises an LED substrate (4) and a blue light LED array (6), and does not comprise a membranous high borosilicate glass layer (11), namely, the high borosilicate glass layer is not deposited on the LED substrate through electron beam evaporation, and the blue light LED array (6) is fixed on the side of the LED substrate with a dam and is fixed with fluorescent glass compounded with a quantum dot film in an inert gas atmosphere.
Comparative example 3
As a high-power white light LED packaging structure of the comparative example, the only difference between the present comparative example and example 1 is that the high-boron silicon fluorescent glass layer (3) coated with fluorescent powder is replaced by a fluorescent glass layer,
the preparation method of the fluorescent glass layer of the comparative example comprises the following steps:
(1) The fluorescent glass paste glass powder has the composition of 25B 2 O 3 -10SiO 2 -35ZnO-6Li 2 O-12La 2 O 3 -12WO 3 The borosilicate glass of (2) is prepared from glass powder, fluorescent powder, terpineol and ethylcellulose. The mass fraction ratio of the glass powder to the fluorescent powder is 80 percent: 20% of terpineol as an organic solvent and ethyl cellulose as a binder, wherein the mass fraction ratio of the terpineol to the ethyl cellulose is 97%:3%. The mass ratio of the glass powder to the fluorescent powder to the terpineol is 4:1.
(2) The glass paste was printed on a single crystal sapphire substrate by screen printing, with a screen size of 200 mesh. The sapphire glass sheet is polished on both sides, and the sapphire substrate is sequentially ultrasonically cleaned in acetone, isopropanol and deionized water for 10 minutes before screen printing, and dried in an oven at 100 ℃ for 10 minutes after nitrogen blow-drying. And standing for a period of time after printing is finished, so that the slurry is naturally leveled on the surface of the sapphire substrate.
(3) Preheating is carried out during sintering, the furnace temperature is slowly increased to 150 ℃ for 15 minutes to volatilize terpineol, then the furnace temperature is slowly increased to 350 ℃ for 15 minutes to reduce the residue of ethyl cellulose in slurry, the furnace temperature is slowly increased to 580 ℃ for 30 minutes to enable glass powder to melt for sintering, the furnace temperature is slowly reduced to 300 ℃, annealing is carried out for 60 minutes, and then the furnace is cooled to room temperature.
To ensure that the thickness of the fluorescent glass layer of this comparative example is consistent with the thickness of the high borosilicate fluorescent glass layer of the coated fluorescent powder of example 1, the thickness of the fluorescent glass layer of this comparative example can be consistent with the thickness of the high borosilicate fluorescent glass layer of the coated fluorescent powder of example 1 by repeating this comparative example (2) and (3), ending the step (3), and measuring the thickness of the fluorescent glass layer until after repeated times.
Comparative example 4
As a high-power white light LED packaging structure of the comparative example, the LED packaging structure comprises fluorescent glass compounded with a quantum dot film, an LED module and a radiator; the red quantum dots and the yellow fluorescent powder are dispersed in the fluorescent glass, namely, the red quantum dot film is not prepared,
The LED module comprises an LED substrate (4) and a blue light LED array (6), wherein the edge of the LED substrate is provided with a surrounding dam (5) perpendicular to the surface of the LED substrate, the surrounding dam (5) is made of the same material as the LED substrate (4), and the blue light LED array (6) is fixed on one side of the LED substrate (4) with the surrounding dam (5);
fluorescent glass, LED module, radiator are fixed.
The preparation method of the fluorescent glass comprises the following steps:
(1) The fluorescent glass paste glass powder has the composition of 25B 2 O 3 -10SiO 2 -35ZnO-6Li 2 O-12La 2 O 3 -12WO 3 The borosilicate glass of (2) is prepared from glass powder, fluorescent powder, terpineol and ethylcellulose. The mass fraction ratio of the glass powder to the fluorescent powder is 80 percent: 20% of terpineol as an organic solvent and ethyl cellulose as a binder, wherein the mass fraction ratio of the terpineol to the ethyl cellulose is 97%:3%. The mass ratio of the glass powder to the fluorescent powder to the terpineol is 4:1.
(2) Red quantum dots are configured to have a concentration of 20 mg.mL -1 Dispersing the CdSe/ZnS quantum dot-toluene solution in the glass slurry in the step (1) to obtain mixed slurry;
(3) And (3) placing the mixed slurry obtained in the step (2) into a graphite grinding tool, wherein the thickness of the mixed slurry is consistent with that of the fluorescent glass compounded with the quantum dot film in the embodiment 1, and drying the mixed slurry in an oven at 100 ℃ for 10 minutes. And standing for a period of time after printing is finished, so that the slurry is naturally leveled on the surface of the sapphire substrate.
(4) Preheating is carried out during sintering, the furnace temperature is slowly increased to 150 ℃ for 15 minutes to volatilize terpineol, then the furnace temperature is slowly increased to 350 ℃ for 15 minutes to reduce the residue of ethyl cellulose in slurry, the furnace temperature is slowly increased to 580 ℃ for 30 minutes to enable glass powder to melt for sintering, the furnace temperature is slowly reduced to 300 ℃, annealing is carried out for 60 minutes, and then the furnace is cooled to room temperature.
Experimental example
1. The average luminous efficiency was measured with an automatic temperature-controlled photo-electric analysis test system.
2. The measurement of the thermal resistance, the thermal resistance of the manufactured device is measured by a thermal resistance measurement system, and the measurement of the thermal resistance of the light-emitting diode device based on an electrical test method mainly comprises three steps: first, the K factor is tested by changing the ambient temperature of the light emitting diode while applying a current to the light emitting diode chip. Second, the instantaneous voltage value at the time of applying current to the device is recorded, and then current is applied to the device. Third, after the device reaches a current steady state, the voltage V is recorded FF 。
Junction temperature (T) J ) And forward voltage (V) F ) The correlation relationship is almost linear. And the K factor has a value of (T H -T L )/(V H -V L ) Absolute value of (2);
wherein T is H And T L Is two different working temperatures of the LED device, V H And V L Are respectively corresponding to T H And T L Forward voltage value at temperature. After three test steps, the thermal resistance can be calculated by:
R θJX ＝(T J -T X )/P H i.e. R θJX Take the value of K (V) FI -V FF )/(I H ×V H ) Is used for the control of the absolute value of (a),
wherein R is θJX Is of thermal resistance, T J Is junction temperature, T X At ambient temperature, P H For power applied to the light emitting diode device, V FI At an initial voltage of V FF To the voltage after the current is passed.
The experimental results are shown in graph 1.
TABLE 1 luminous efficiency and thermal resistance of LEDs of examples 1-8, comparative examples 1-4
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By comparing the light emission efficiency and the thermal resistance of the example with those of the comparative example 1, the thermal resistance of the comparative example 1 is slightly large, but the light emission efficiency is significantly reduced compared with the example. After the high borosilicate glass layer is deposited on one side of the substrate for fixing the LED through electron beam evaporation and is fixed with the fluorescent layer, the heat dissipation efficiency of the substrate side radiator is improved, but the high heat conductivity of the high borosilicate glass has negative effects, heat is conducted from the high borosilicate glass layer to yellow fluorescent powder and red quantum dots, so that the quantum dots are thermally quenched at high temperature, and the light emitting performance of the quantum dot white LED is reduced. Thus, embodiments maintain the high borosilicate glass layer on the LED substrate a distance from the phosphor layer. According to the embodiment, the luminous efficiency and the thermal resistance of the comparative examples are lower, but the luminous efficiency of the comparative example 2 is remarkably improved, the embodiment is illustrated that the high borosilicate glass layer is deposited on one side of the substrate for fixing the LEDs through electron beam evaporation, so that the high borosilicate glass layer is completely embedded with the LEDs, heat generated by electrifying and emitting the LEDs is conducted to the high borosilicate glass layer embedded with the LEDs while being conducted to the LED substrate, the high borosilicate glass has excellent heat dissipation performance, heat conducted to the LED substrate by the LEDs is quickly conducted and distributed to the high borosilicate glass layer, the high borosilicate glass layer is embedded with the LEDs, and the heat is directly deposited on the LED substrate, so that the heat is conducted to the substrate more uniformly, the heat concentration at the position for fixing the LEDs on the chip substrate is reduced, the whole LED substrate is enabled to be dissipated more uniformly through the radiator fixed on the substrate, and the heat dissipation efficiency of the LED through the radiator of the chip substrate is improved. According to the results of the embodiment and the comparative examples 1-4, the high-power white light LED packaging structure keeps a certain distance between the high borosilicate glass layer and the fluorescent layer on the LED substrate, meanwhile, the yellow fluorescent layer and the red quantum dot layer are separated, and the high borosilicate glass target material containing the yellow fluorescent powder is deposited by electron beam evaporation to form the high borosilicate fluorescent glass layer coated with the fluorescent powder. In addition, the high borosilicate glass has good optical performance, and the material of the high borosilicate glass does not negatively influence the light efficiency of the LED. In the high-power white light LED packaging structure, the high borosilicate glass layer is deposited on the LED substrate and embedded with the luminous LED, meanwhile, the yellow fluorescent layer and the red quantum dot layer are separated, and the high borosilicate glass target material containing the yellow fluorescent powder is deposited by using electron beam evaporation, so that the high borosilicate fluorescent glass layer coated with the fluorescent powder, the high borosilicate fluorescent glass layer coated with the fluorescent powder and the high borosilicate glass layer on the LED module are kept at a certain distance, and the technical cores are mutually complementary, combined and matched, so that the high-power white light LED has high luminous efficiency and high heat dissipation efficiency.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the scope of the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solution of the present invention may be modified or substituted equally without departing from the spirit and scope of the technical solution of the present invention.
Claims (10)
1. The high-power white light LED packaging method is characterized by comprising the following steps of:
(1) Phosphor powder and SiO 2 And B 2 O 3 Mixing the materials as a target A, and forming a high-boron silicon fluorescent glass layer coated with fluorescent powder on one side surface of a single crystal sapphire substrate by electron beam evaporation and deposition to obtain the fluorescent glass of the sapphire substrate, wherein the projection of the high-boron silicon fluorescent glass layer coated with the fluorescent powder is consistent with that of the single crystal sapphire substrate, and the emission light of the fluorescent powder has the common wavelength of 500-560 nm; in the target material A, the weight percentage of fluorescent powder is 15% -25%, and B 2 O 3 The mass of (a) is the mass of SiO in the target material A 2 And B 2 O 3 12% -20% of the total mass;
(2) Stacking a quantum dot film on the back surface of the sapphire substrate fluorescent glass, namely, on one side of a high-boron silicon fluorescent glass layer which is not deposited with coating fluorescent powder, so as to obtain fluorescent glass compounded with the quantum dot film, wherein the light-emitting spectrum of the quantum dot film is 600-650 nm;
(3) The LED module comprises an LED substrate, a blue light LED array, a high borosilicate glass layer, a light-emitting diode (LED) module and a light-emitting diode (LED) module, wherein the edge of the LED substrate is provided with a surrounding dam which is perpendicular to the surface of the LED substrate, the material of the surrounding dam is the same as that of the LED substrate, the blue light LED array is fixed on the side of the LED substrate with the surrounding dam, the high borosilicate glass is deposited on the side, which is fixed with the blue light LED array, of the high borosilicate glass completely covers the blue light LED array by electron beam evaporation, a membranous high borosilicate glass layer consistent with the projection of the substrate is formed, and the top surface of the membranous high borosilicate glass layer and the top of the surrounding dam form a recess to obtain the LED module;
(4) Fixing the fluorescent glass compounded with the quantum dot film with the LED module to obtain a white light LED, wherein the high-boron silicon fluorescent glass layer coated with the fluorescent powder is adjacent to the high-boron silicon fluorescent glass layer on the LED module, and a certain distance is kept between the high-boron silicon fluorescent glass layer coated with the fluorescent powder and the high-boron silicon glass layer on the LED module;
(5) Fixing a radiator on one side of an LED substrate on the white light LED obtained in the step (4), wherein the radiator is fixed on one side of the LED substrate, on which a blue light LED is not mounted;
the step (3) has no sequence relation with the step (1) and the step (2).
2. The method of packaging a high-power white LED according to claim 1, wherein in the step (1), the method of depositing the phosphor-coated borosilicate glass by electron beam evaporation comprises the steps of; placing target powder in a graphite crucible according to weight ratio, placing into an electron beam evaporator, and reducing vacuum degree to 1.5X10 -3 And after Pa is lower, opening the electron beam to start evaporation, starting the substrate to rotate at a current of 150-180 mA, starting deposition, wherein the deposition rate is 2.5-5A/S, heating the substrate to 130-160 ℃, and monitoring the thickness of the deposited material by using a film thickness meter.
3. The method for packaging the high-power white light LED according to claim 1 or 2, wherein the thickness of the high-boron silicon fluorescent glass layer coated with the fluorescent powder is 30-200 μm, and the thickness ratio of the sapphire substrate layer, the quantum dot film and the high-boron silicon fluorescent glass layer coated with the fluorescent powder is 1: (0.9 to 1.1): (0.9 to 1.1).
4. The method for packaging the high-power white light LED according to claim 1, wherein in the step (2), the preparation method of the quantum dot film comprises the steps of dispersing a quantum dot solution into ultraviolet curing glue, and ultraviolet curing the solution into a sheet shape in a die to obtain the quantum dot film, wherein the mass fraction of quantum dots in the quantum dot film is 0.10% -0.30%, and a solvent of the quantum dot solution is an organic solvent.
5. The method of packaging a high-power white LED according to claim 1, wherein in the step (3), the method of depositing high borosilicate glass by electron beam evaporation comprises the steps of; placing target material in graphite crucible, placing into electron beam evaporator, vacuum degree is reduced to 1.5X10 -3 After Pa or below, opening the electron beam to start evaporation, starting the rotation of the substrate, starting deposition at a deposition rate of 2.5-5A/S, heating the substrate to 130-160 ℃, and monitoring the thickness of the deposited material by using a film thickness meter, wherein the target is formed by SiO 2 And B 2 O 3 Composition of said B 2 O 3 The mass percentage of the target material is 12% -20%.
6. The method according to claim 1, wherein in the step (4), a certain distance is kept between the high borosilicate fluorescent glass layer coated with the fluorescent powder and the high borosilicate glass layer on the LED module, and the wavelength range of the light emission spectrum of the blue LED on the LED module is 400-500 nm.
7. The method of claim 1, wherein the high power white light LED package,
in the step (2), the method for stacking the quantum dot film on the back surface of the sapphire substrate fluorescent glass comprises the steps of curing the curing glue by adopting ultraviolet curing glue as an adhesive on the back surface of the sapphire substrate fluorescent glass and exposing the curing glue under an ultraviolet LED lamp;
in the step (3), the method for fixing the blue light LED array on the side of the LED substrate with the dam is that ultraviolet curing glue is adopted as an adhesive to be exposed under an ultraviolet LED lamp to cure the curing glue;
In the step (4), the method for fixing the fluorescent glass compounded with the quantum dot film and the LED module is to use ultraviolet curing glue as an adhesive to expose under an ultraviolet LED lamp to cure the curing glue.
8. The high-power white light LED packaging structure is characterized by comprising fluorescent glass compounded with a quantum dot film, an LED module and a radiator;
the fluorescent glass compounded with the quantum dot film comprises a sapphire substrate layer, a quantum dot film and a high-boron silicon fluorescent glass layer coated with fluorescent powder, wherein the light-emitting spectrum of the quantum dot film is 600-650 nm, and the quantum dot film and the high-boron silicon fluorescent glass layer coated with the fluorescent powder are respectively stacked on two sides of the sapphire substrate layer;
the high boron silicon fluorescent glass layer coated with the fluorescent powder is prepared by mixing the fluorescent powder and SiO 2 And B 2 O 3 Mixing the single crystal sapphire substrate and the single crystal sapphire substrate as a target material A, and depositing the single crystal sapphire substrate on one side surface of the single crystal sapphire substrate by electron beam evaporation to form a single crystal sapphire substrate; the luminous wavelength of the fluorescent powder is 500-560 nm;
the LED module comprises an LED substrate, a blue light LED array and a membranous high borosilicate glass layer, wherein the edge of the LED substrate is provided with a surrounding dam perpendicular to the surface of the LED substrate, the surrounding dam is made of the same material as the LED substrate, the blue light LED array is fixed on one side of the LED substrate with the surrounding dam, and the membranous high borosilicate glass layer is prepared by using SiO (silicon oxide) as a material of the surrounding dam 2 And B 2 O 3 Mixing the film-shaped high borosilicate glass layer serving as a target material and depositing the film-shaped high borosilicate glass layer on an LED substrate on one side of which a blue LED array is fixed through electron beam evaporation, wherein the blue LED array is completely covered by high borosilicate glass, so that a film-shaped high borosilicate glass layer consistent with the projection of the substrate is formed, and a concave is formed on the top surface of the film-shaped high borosilicate glass layer and the top of a surrounding dam;
the fluorescent glass compounded with the quantum dot film is fixed with the LED module, the high-boron silicon fluorescent glass layer coated with the fluorescent powder is adjacent to the high-boron silicon fluorescent glass layer on the LED module, and a certain distance is kept between the high-boron silicon fluorescent glass layer coated with the fluorescent powder and the high-boron silicon glass layer on the LED module;
the radiator is fixed on one side of the LED substrate, on which the blue light LED is not mounted.
9. The high-power white light LED packaging structure according to claim 8, wherein the thickness of the high-boron silicon fluorescent glass layer coated with the fluorescent powder is 30-200 μm, a certain distance is kept between the high-boron silicon fluorescent glass layer coated with the fluorescent powder and the high-boron silicon glass layer on the LED module, and the light-emitting spectrum wavelength range of the blue light LED on the LED module is 400-500 nm.
10. The high-power white light LED package structure of claim 8 or 9, wherein the thickness ratio of the sapphire substrate layer, the quantum dot film and the high-borosilicate fluorescent glass layer coated with the fluorescent powder is 1: (0.9 to 1.1): (0.9 to 1.1).
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